JP6741521B2 - Circuit device - Google Patents

Description

The present invention relates to a circuit device for a probe card used in, for example, a semiconductor device inspection device.

As a probe card for electrically inspecting a semiconductor element, a circuit device in which a large number of terminals electrically connected to electrodes of the semiconductor element are arranged on an insulating substrate such as a ceramic substrate is used. The terminal is electrically led to the lower surface side of the circuit device by a through conductor penetrating the ceramic substrate in the thickness direction. As a result, the terminals can be electrically connected to the external electric circuit.

A connecting material (probe or the like) for connecting to the electrode of the semiconductor element is joined to each terminal by soldering or the like. The connecting material joined to the terminals is pressed against the electrodes of the semiconductor element to be connected, and the operation of the circuit of the semiconductor element is inspected by an external electric circuit.

In recent years, in the case of joining a terminal and a probe pin, in order to reduce damage to the terminal and the like due to heat at the time of joining, a joining method of locally heating the joining portion of the terminal with the probe pin by laser light irradiation has been proposed. ing.

JP 2011-114174 JP

In the above-mentioned conventional circuit device, the heat applied to the terminal by the laser light is easily conducted to the ceramic substrate and the through conductor which are in contact with the terminal. Therefore, it was difficult to effectively heat the terminal. As a result, the joining strength of the connecting material and the electrical connection reliability may be reduced, and the workability of the joining work may be reduced.

A circuit device according to one aspect of the present invention is an insulating substrate having a through hole penetrating from an upper surface to a lower surface, only the upper surface of the insulating substrate , or the surface of the insulating substrate in the through hole from the upper surface of the insulating substrate. A wiring board including a resin film having a resin through hole extending from the upper surface to the lower surface at a portion corresponding to the through hole and extending to the upper surface side, and a connection pad provided on the upper surface of the resin film. And a circuit wiring film which is formed from the lower surface of the insulating substrate through the through hole and the resin through hole to the resin film and is connected to the connection pad. At least a part of the surface of the resin film in the resin through hole is located inside the through portion with respect to the surface of the insulating substrate in the through hole, and the circuit wiring film is the resin through hole. The resin through-hole has a portion thinner than the portion located on the surface of the insulating substrate .

In the circuit device according to one aspect of the present invention, since the connection pad as a terminal is located on the upper surface of the resin film arranged on the insulating substrate, it is insulated from the connection pad by the resin film having a relatively small thermal conductivity. Heat conduction to the substrate is reduced.

Further, since the surface of the resin film in the resin through hole is inside the surface of the insulating substrate in the through hole, the space in the resin through hole is relatively narrow. The thickness of the circuit wiring film formed on the surface of the resin film in the relatively narrow space by a plating method or the like is relatively thin. Therefore, heat conduction toward the lower surface of the insulating substrate by the circuit wiring film in the resin through hole is also reduced.

Therefore, it is possible to provide a circuit device in which the connection pad can be effectively heated and the connection material such as the probe pin can be easily bonded to the connection pad by the bonding material.

(A) is a top view which shows the circuit device 10 of embodiment of this invention, (b) is sectional drawing in the AA line of (a). It is a top view which expands and shows the principal part of Fig.1 (a). (A) is an enlarged plan view showing a main part of FIG. 2, and (b) is a plan view showing a modified example of (a). (A)-(c) is sectional drawing which expands and shows the example of the principal part of FIG.1(b), respectively. It is a perspective view which expands and shows the connection pad of the circuit device shown in FIG. 1, and its periphery. It is a top view which shows the modification of FIG.

A circuit device 10 according to an embodiment of the present invention will be described with reference to the drawings. It should be noted that the drawings used in the following description are schematic, and the distinction between upper and lower sides is for convenience of description and does not regulate the upper and lower sides when the circuit device 10 is actually used. Further, the semiconductor element in the following description is not limited to an individual element (so-called chip), but also includes a semiconductor wafer in which a plurality of regions each of which is an element are arranged on a semiconductor substrate such as a silicon substrate.

1A is a plan view showing a circuit device 10 according to an embodiment of the present invention, and FIG. 1B is a sectional view taken along the line AA of FIG. 2 is an enlarged plan view showing an essential part (B portion) of the circuit device 10 of FIG. 1A, and FIG. 3A is an enlarged view of an essential part (C portion) of FIG. FIG. In addition, FIGS. 4A to 4C are cross-sectional views each showing an enlarged example of the main part (portion D) of FIG. 1B. FIG. 5 is an enlarged perspective view showing the connection pad and its periphery included in the circuit device shown in FIG. FIG. 3B will be described later.

The circuit device 10 of the embodiment is basically composed of an insulating substrate 1 having an upper surface and a lower surface, a wiring substrate 2 arranged on the insulating substrate 1, and a circuit wiring film 3 formed from the insulating substrate 1 to the wiring substrate 2. It is configured to

The insulating substrate 1 has a through hole 1a penetrating from the upper surface to the lower surface. The wiring board 2 includes a resin film 21 having a resin through hole 2a penetrating from the upper surface to the lower surface at a portion corresponding to the through hole 1a, and a connection pad 4 provided on the upper surface of the resin film 21. The circuit wiring film 3 is formed on the resin film 21 from the lower surface of the insulating substrate 1 through the through portion K including the through hole 1a and the resin through hole 2a. The circuit wiring film 3 is connected to the connection pad 4 on the upper surface of the resin film 21. The penetrating portion K is a portion that continuously penetrates the resin film 21 of the insulating substrate 1 and the wiring substrate 2 in the thickness direction. Further, at least a part of the surface of the resin film 21 in the resin through hole 2a is located inside the through portion K with respect to the surface of the insulating substrate 1 in the through hole 1a.

The insulating substrate 1 has a function of ensuring the rigidity of the entire circuit device 10, for example. The rigidity of the circuit device 10 is enhanced by the insulating substrate 1. As a result, for example, when the circuit device 10 is used as a substrate for a probe card and is pressed against a semiconductor element (not shown) for inspection and electrically connected, its deformation is suppressed.

The resin film 21 of the wiring board 2 serves as a base for arranging the plurality of connection pads 4 electrically connected to the semiconductor element in a linear array on the same plane while being electrically insulated from each other. Function. At this time, the insulating substrate 1 having high rigidity as described above suppresses the deformation of the wiring substrate 2 including the resin film 21.

The resin film 21 of the insulating substrate 1 and the wiring substrate 2 is, for example, a polygonal shape such as a quadrangle, a hexagon or an octagon, or a plate shape such as a circular shape in a plan view (when viewed from the upper surface side). In FIG. 1, a regular octagonal plate-shaped insulating substrate 1 and a regular octagonal layered resin film 21 disposed on the upper surface of the insulating substrate 1 are illustrated. The insulating substrate 1 and the resin film 21 have the same shape and size with each other in a plan view, and integrally form a base portion (no reference numeral). A plurality of connection pads 4 are arranged on the planar uppermost surface (upper surface of the resin film 21) of the base portion.

The dimensions of the insulating substrate 1 and the resin film 21 in plan view are appropriately set according to conditions such as the dimensions in plan view of the semiconductor element to be inspected when used as a probe card substrate, for example.

As described above, the circuit wiring film 3 is provided on the base portion composed of the insulating substrate 1 and the resin film 21 from the lowermost surface to the uppermost connection pad 4. The circuit wiring film 3 is, for example, for electrically leading the connection pad 4 to the lower surface side of the insulating substrate 1 to facilitate electrical connection to an external electric circuit. That is, the circuit wiring film 3 functions as a conductive path for externally connecting the connection pad 4.

The circuit wiring film 3 continuously passes through a resin through hole 2a penetrating from the upper surface to the lower surface of the resin film 21 and a through hole 1a penetrating from the upper surface to the lower surface of the insulating substrate 1, and the base portion is vertically It is conducting in the direction. That is, the circuit wiring film 3 is continuously arranged from the surface of the resin film 21 in the penetrating portion K to the surface of the insulating substrate 1. A portion of the circuit wiring film 3 located on the lower surface of the insulating substrate 1 is electrically connected to an external electric circuit such as a circuit for electrically inspecting a semiconductor element.

For example, as shown in FIG. 5, the probe 6 is bonded to the connection pad 4 of the circuit device 10 to form a probe card (no reference numeral). In this probe card, the tip portion of the probe 6 is pressed against the electrode (not shown) of the semiconductor element and electrically connected to each other, and the semiconductor element is electrically inspected.

The connection pad 4 is a portion to which the probe 6 is joined and fixed by a joining material 7 such as solder. That is, the connection pad 4 functions as a base metal layer for melting and connecting the bonding material 7 by heating with laser light (hereinafter, simply referred to as laser).

The electrode of the semiconductor element electrically connected to the connection pad 4 via the probe 6 is further electrically connected to an external electric circuit via the circuit wiring film 3. As a result, the electrodes of the semiconductor element and the external electric circuit are electrically connected to each other, and a test is performed to determine whether or not the electric circuit of the semiconductor element operates normally.

In this case, the semiconductor element is temporarily placed on the upper surface of the circuit device 10 to make an electrical check. Examples of the semiconductor element include a semiconductor integrated circuit element such as an IC or an LSI, or a micromachine (so-called MEMS element) in which a minute electromechanical mechanism is formed on the surface of a semiconductor substrate.

As described above, a large number of connection pads 4 electrically connected to the semiconductor element are provided on the upper surface of the resin film 21 according to the electrodes of the semiconductor element. The individual connection pads 4 are formed in a quadrangular pattern such as a rectangular shape so as to be suitable for arranging a large number of connection pads 4 on the upper surface of the resin film 21. The rectangular connection pads 4 are arranged so that their long sides are adjacent to each other. That is, the plurality of connection pads 4 are arranged in a linear array. The arrangement of the connection pads 4 extends, for example, parallel to the side of the upper surface of the resin film 21. When the connection pad 4 has a rectangular pattern, it is easy to join the probe 6 having a rectangular bottom surface as shown in FIG. 5, for example.

The circuit wiring film 3 includes, for example, from the connection pad 4 to the surface wiring portion on the lower surface where the base portion is electrically connected via the surface wiring portion on the upper surface to the surface wiring portion on the lower surface as described above. It functions as a conductive path for electrically connecting to a circuit. The probe 6 is electrically connected to the circuit wiring film 3 as the surface wiring via the connection pad 4, and is also directly connected to the electrode of the semiconductor element, so that the electrode of the semiconductor element and the surface wiring of the lower surface of the insulating substrate 1 are connected. And are electrically connected to each other. That is, the semiconductor element arranged on the upper surface side of the circuit device 10 and connected to the probe 6 is electrically led to the lower surface side of the circuit device 10 via the conductor portions of the circuit device 10.

The insulating substrate 1 is formed of an insulating material including, for example, an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a mullite sintered body, or a ceramic sintered body such as glass ceramics. ..

The circuit wiring film 3 and the connection pad 4 are made of a metal material such as tungsten, molybdenum, manganese, copper, chromium, nickel, silver, palladium, gold or platinum. Further, the connection pad 4, the dummy pad 5, and the circuit wiring film 3 may be made of an alloy material of these metal materials. These metal materials (alloy materials) are formed by being deposited on the insulating substrate 1 and the resin film 21 in the form of, for example, a metallized conductor (thick film conductor), a thin film conductor, or a plated conductor.

The connection pads 4 and the circuit wiring film 3 may be made of different materials, or may be adhered to the insulating substrate 1 and the resin film 21 in different types. For example, the connection pad 4 may include a copper thin film conductor, and the circuit wiring film 3 may include a tungsten thick film conductor.

Further, the circuit wiring film 3 may be formed of different materials in the portion located in the through hole 1a and the portion located in the resin through hole 2a. For example, the circuit wiring film 3 including a thick film conductor of tungsten may be arranged in the through hole 1a, and the circuit wiring film 3 including a thin film conductor such as copper may be arranged in the resin through hole 2a.

The insulating substrate 1, the wiring substrate 2, and the circuit wiring film 3 can be manufactured, for example, as follows. That is, raw material powder such as aluminum oxide is molded into a sheet shape together with an organic solvent and a binder to form a plurality of ceramic green sheets, and the ceramic green sheets are mechanically punched or punched such as laser processed. To form the through hole 1a. Further, a powder of a metal material such as tungsten is kneaded with an organic solvent, a binder and the like to produce a metal paste. After that, the metal paste is printed on the inner surface of the through hole 1a (the surface of the ceramic green sheet in the through hole 1a) by a method such as a screen printing method that also uses suction, and the ceramic green sheet and the metal paste are fired. Through these steps, the insulating substrate 1 and the circuit wiring film 3 in the through hole 1a can be manufactured.

At this stage, the circuit wiring film 3 may not be formed in the through hole 1a, and the circuit wiring film 3 may be formed together with the portion in the resin through hole 2a in the next step. By doing so, it is advantageous in terms of the conductivity of the circuit wiring film 3 that electrically connects the base portion vertically, and also in terms of the productivity of the circuit device 10.

After the insulating substrate 1 and the like are manufactured as described above, the resin film 21, the connection pads 4, the circuit wiring film 3 on the upper surface are formed on the upper surface of the insulating substrate 1 by a thin film method including a plating method (including pattern processing by an etching method). Then, the circuit wiring film 3 in the resin through hole 2a is formed. The insulating substrate 1, the wiring substrate 2, and the circuit wiring film 3 can be manufactured by the above steps.

The circuit wiring film 3 can be formed by the thin film method as follows, for example.

The resin film 21 is, for example, a polyimide resin, a polyamideimide resin, a siloxane modified polyamideimide resin, a siloxane modified polyimide resin, a polyphenylene sulfide resin, a wholly aromatic polyester resin, a BCB (benzocyclobutene) resin, an epoxy resin, a bismaleimide triazine resin, It is made of a material appropriately selected from insulating resins such as polyphenylene ether resin, polyquinoline resin and fluororesin. A resin adhesive such as a siloxane-modified polyamideimide resin, a siloxane-modified polyimide resin, a polyimide resin, a bismaleimidetriazine resin, or an epoxy resin is applied to the lower surface of a sheet of about 20 μm to 50 μm made of the above resin so as to have a dry thickness of about 5 μm to 20 μm. An adhesive layer is formed by applying by a coating method such as a blade method and drying, and this is laminated on the insulating substrate 1 and heated and pressed to form the resin film 21 on the upper surface of the insulating substrate 1.

Next, a resin through hole 2a is formed in a portion of the resin film 21 corresponding to the through hole 1a by a RIE (reactive ion etching) method, a laser method or a combination thereof, and then a method such as a sputtering method from the upper surface and the lower surface. Then, the adhesion layer 31 is formed on the exposed surface including the insulating substrate 1 and the through portion K of the resin film 21. The adhesion layer 31 is formed of an active metal (at least one kind) such as titanium, chromium and molybdenum with a thickness of 0.1 to 1 μm, for example. The length of the through portion K is the through hole 1
When it exceeds 3 times the diameter of a, a soft metal (for example, copper, gold, silver, etc.) having a Young's modulus of less than 150 GPa is additionally formed on the active metal by sputtering etc. to a thickness of 1 to 5 μm. You may. Thereby, the electrical connection reliability of the wiring of the through portion K can be further improved.

After that, a plating resist for forming a main conductor layer is formed on the front and back surfaces, and a main conductor layer 32 made of a metal material (at least one kind) such as copper, gold, silver and nickel is required on the adhesion layer 31 by a plating method. 1 to 15 μm is applied to the part. After peeling off the plating resist, a plating resist for forming a protective layer again is formed if necessary, and a protective layer of nickel, gold or the like is formed by 1 to 5 μm by a plating method. The protective layer 33 is made of nickel, gold or the like as described above, and has a function of suppressing oxidation of the main conductor layer 32 and the like. After that, the resist is peeled off, and the exposed adhesion layer (not shown) is removed by etching. The connection pad 4 and the circuit wiring film 3 can be formed by the above method. Further, the circuit wiring film 3 can be collectively formed from the inner surface of the through hole 1a to the inner surface of the resin through hole 2a.

Of the formed circuit wiring film 3, the upper surface portion of the resin film 21 has a receiving land portion 3a and a wiring portion 3b. The wiring in the through hole 1a and the surface wiring on the lower surface have an adhesion layer 31, a main conductor layer 32, and a protective layer 33 which are in close contact with each other and are stacked. The wiring portion 3b on the upper surface of the resin film 21 of the circuit wiring film 3 has an adhesion layer 31 and a protective layer 33. The receiving land portion 3a is a portion formed so as to surround the resin through hole 2a in a plan view, and the wiring portion 3b on the upper surface is a portion connecting the receiving land portion 3a and the connection pad 4.

Further, in the circuit device 10 of the embodiment, at least a part of the surface of the resin film 21 in the resin through hole 2a is located inside the through portion K with respect to the surface of the insulating substrate 1 in the through hole 1a. Some examples of this form are shown in FIGS. 4(a)-(c). In other words, as in the example shown in FIG. 3A, for example, the resin through hole 2a is located inside the inner surface of the through hole 1a (the central portion side of the through hole 1a in plan view) in plan view. .. In the following, the surface of the resin film 21 in the resin through hole 2a may be referred to as the inner surface of the resin through hole 2a. Further, the surface of the insulating substrate 1 in the through hole 1a may be referred to as the inner surface of the through hole 1a.

In such a circuit device 10, since the connection pad 4 as a terminal is located on the upper surface of the resin film 21 arranged on the insulating substrate 1, the connection pad 4 is formed by the resin film 21 having a relatively low thermal conductivity. The heat conduction from the substrate to the insulating substrate 1 can be effectively reduced.

Further, since the surface of the resin film 21 in the resin through hole 2a is inside the surface of the insulating substrate 1 in the through hole 1a, the space in the resin through hole 2a is relatively narrow. The thickness of the circuit wiring film 3 formed on the surface of the resin film 21 in the relatively narrow space by the sputtering method, the plating method or the like is relatively thin. Therefore, heat conduction toward the lower surface of the insulating substrate 1 by the circuit wiring film 3 in the resin through hole 2a is also reduced. Further, the wiring portion 3b on the upper surface has a wiring thickness of about 3 to 10 μ without the main conductor layer 32, which is thinner than the wiring thickness of the receiving land portion 3b having the main conductor layer of about 10 to 20 μ. Heat conduction through the is reduced. The main conductor layer 32 may be formed in the connection pad 4 and the wiring portion 3b depending on the required electrical characteristics and the length of the wiring portion 3b.

Therefore, it is possible to provide the circuit device 10 in which the connection pad 4 can be effectively heated and the connection material such as the probe pin 6 can be easily bonded to the connection pad 4 by the bonding material 7.

A configuration in which the surface of the resin film 21 in the resin through hole 2a is inside the surface of the insulating substrate 1 in the through hole 1a is, for example, as shown in FIG. 3(a). That is, the dimension of the opening portion (resin opening) 2b of the resin through hole 2a in plan view is smaller than the dimension of the opening portion (opening 1b) of the through hole 1a. The resin through hole 2a having the resin opening 1b having such a size can be formed by a method such as RIE by setting the resin opening 2b to have a relatively small size as described above.

The thickness of the portion of the circuit wiring film 3 attached to the inner surface of the resin through hole 2a may be, for example, about 3 to 10 μm. The thickness of the portion of the circuit wiring film 3 attached to the inner surface of the through hole 1a may be, for example, about 4 to 12 μm. With the circuit wiring film 3 having such a thickness, it is possible to effectively suppress the conduction of heat in the portion in the resin through hole 2a, and to suppress the electric resistance to be low in the portion in the relatively long through hole 1a. be able to. The thickness of the circuit wiring film 3 on the inner surfaces of the resin through hole 2a and the through hole 1a is a value measured at a half of the thickness of each of the resin film 21 and the insulating substrate 1. The thickness can be measured by, for example, observing a cross section at a predetermined position with a metal microscope or a method such as fluorescent X-ray analysis.

In the example shown in FIG. 3A, the resin through hole 2a (resin opening 2b) has a bent and intricate shape (so-called zigzag shape) in a plan view. Similarly, the circuit wiring film 3 attached to the inner surface of the resin through hole 2a also has a complicated shape. The resin through hole 2a having such a shape may be formed by processing the insulating substrate 1 side by the RIE method.

Further, in the example shown in FIG. 3A, the through hole 1a (opening 1b) is circular in plan view. Similarly, the circuit wiring film 3 attached to the inner surface of the through hole 1a also has a circular surface (cylindrical shape or the like). Then, as in the example shown in the sectional view of FIG.
The through hole 1a has a smaller diameter from the lower surface to the upper surface, and the circuit wiring film 3 adhered to the inner surface of the through hole 1a also has a smaller diameter. 1a may be formed by laser processing from the lower side of the insulating substrate 1.

When the through hole 1a (and the circuit wiring film 3 on the inner surface thereof) has such a shape, the resin opening 2b is smaller than the opening 1b, and therefore the back surface of the resin opening 2b or the resin opening 2b of the through hole 1a may be formed by sputtering from the upper surface. It is difficult to form the adhesion layer 31 in the vicinity, but since the adhesion layer 31 near the resin opening 2b of the through hole 1a and the back surface of the resin opening 2b is easily formed by sputtering from the lower surface, it is easy to secure upper and lower conductivity. ..

FIG. 3B is a plan view showing a modified example of FIG. In FIG. 3B, the same parts as those in FIG. 3A are designated by the same reference numerals. In the example shown in FIG. 3B, the resin through hole 2a (resin opening 2b) has a portion located outside the opening 1b of the through hole 1a in plan view. In this case, the circuit wiring film 3 is unlikely to be thin above the resin through hole 2a in the portion where the resin through hole 2a is located outside the through hole 1a. Therefore, the circuit wiring film 3 having high electrical connection reliability can be obtained.

In the example shown in FIG. 3B, the width of the wiring portion 3 of the circuit wiring film 3 in plan view is partially narrowed. In such a case, by reducing not only the thickness of the circuit wiring film 3 but also the width thereof, the effect of reducing the heat transmitted to the outside through the circuit wiring film 3 can be further enhanced.

Further, in the circuit device 10 of this embodiment, the surface of the resin film 21 in the resin through hole 2a is on the upper surface side of the resin film 21 in the resin through hole 2a, as in the example shown in FIG. 4B. You may have the part which inclines outside the through-hole part K continuously toward the opening of the lower surface side from the opening (resin opening 2b). Such through holes 2a can be formed by increasing the amount of carrier gas and forming a high gas pressure when forming the resin through holes 2a by the RIE method.

In this case, since the resin through-hole 2a is inclined outward from the upper part to the lower part, the angle from the inclined surface of the resin through-hole 2a to the upper surface of the resin film 2 becomes more acute. The circuit wiring film 3 becomes thinner in the hole 2a. Therefore, heat transfer from the connection pad 4 which has propagated through the circuit wiring film 3 to the outside is reduced, and the solderability of the probe 6 to the connection pad 4 is effectively improved.

In the example shown in FIG. 4A, the surface of the resin film 21 in the resin through hole 2a projects toward the inside of the through portion K with an elliptic arc-shaped cross section. In this case, the thickness of the circuit wiring film 3 can be effectively reduced at the central portion in the thickness direction of the resin through hole 2a.

Further, in the circuit device 10 of this embodiment, as in the example shown in FIG. 4C, a part of the resin film 21 extends to at least a part of the surface of the insulating substrate 1 in the through hole 1a. May be.

In this case, since the resin film 21 partially extends to the surface of the insulating substrate 1, the adhesion strength of the resin film 21 to the insulating substrate 1 is effectively improved. Therefore, the connection reliability of the circuit wiring film 3 is improved. For example, even if the angle from the inclined surface of the resin through hole 2a to the upper surface of the resin film 21 becomes an acute angle as in the modification shown in FIG. 4B, the insulating substrate 1 and the resin film 21 of the resin film 21 are formed. It is possible to secure sufficient bonding strength with respect to.

In order to form such a through hole 2a, for example, the thickness or composition of the adhesive layer formed on the resin film may be adjusted. In addition, by setting the condition for adhering the resin film 21 to the insulating substrate 1 to a high temperature and high pressure side, the adhesive layer hangs inside the through hole 1a at the time of adhering, and then the resin film 21 is processed by the RIE method. However, the through-hole 2a having the above-described form can be formed.

FIG. 6 is a plan view showing a modified example of FIG. In FIG. 6, the same parts as those in FIG. 2 are designated by the same reference numerals. In the example shown in FIG. 6, the dummy pad 5 is arranged adjacent to at least the connection pad 4 located at the end of the arrangement among the plurality of arranged connection pads 4. In this case, the end of the arrangement is a portion where the end portions of the plurality of connection pads 4 arranged at the same adjacent intervals are located. In addition, the portion where the adjacency is wide is the portion adjacent to the connection pad 4 located at the end of the array. When one connection pad 4 exists alone, the portion adjacent to the connection pad 4 corresponds to the portion adjacent to the connection pad 4 at the end of the array.

In the example shown in FIG. 6, there are three rows of connection pads 4 arranged from the top in the order of one, two, and three connection pads 4. In each array, dummy pads 5 are arranged adjacent to both ends thereof.

The connection pad 4 and the dummy pad 5 are arranged in such a manner that the dummy pad 5 is arranged so as to fill a portion of the plurality of connection pads 4 that are arranged adjacent to each other and have a relatively large adjacent interval. It can also be considered. Further, in the portion where the plurality of connection pads 4 are arranged, it can be considered that the unevenness of the exposed area of the resin film 21 exposed in the arranged portion is reduced.

In this case, since the dummy pad 5 is arranged in the portion where the connection pad 4 is not continuous, the influence of the arrangement (bias) of the connection pad 4 on the heating efficiency by the laser can be reduced. .. Therefore, more stable laser heating can be performed, and the probe 6 can be soldered to the connection pad 4 in a stable manner.

The dummy pad 5 can be formed, for example, by using the same material as the connection pad 4 and the same method. Further, in the step of forming the connection pad 4, the dummy pad 5 can be simultaneously formed by appropriately setting the pattern of the plating resist.

It should be noted that the present invention is not limited to the examples of the above embodiments, and various modifications can be made within the scope of the gist of the present invention. For example, the resin through hole 2a may have a circular shape in a plan view like the through hole 1a, and the through hole 1a may have an inner surface that is not smooth like the resin through hole 2a (a zigzag shape in a plan view).

1... Insulating substrate 1a... Through hole 1b... Opening 2... Wiring substrate
21... Resin film 2a... Resin through hole 2b... Resin opening 3... Circuit wiring film 3a... Wiring portion 3b... Receiving land portion
31-Adhesion layer
32...Main conductor layer
33 Protective layer 4 Connection pad 5 Dummy pad 6 Probe 7 Bonding material
10: Circuit device K: Penetration part

Claims (2)

An insulating substrate having a through hole penetrating from the upper surface to the lower surface,
It is arranged to extend only to the upper surface of the insulating substrate or to extend from the upper surface of the insulating substrate to the upper surface side of the surface of the insulating substrate in the through hole, and from the upper surface to the lower surface at a portion corresponding to the through hole. A wiring board including a resin film having a resin through hole penetrating therethrough and a connection pad provided on the upper surface of the resin film,
It is formed from the lower surface of the insulating substrate to the resin film through a through portion including the through hole and the resin through hole, and comprises a circuit wiring film connected to the connection pad,
At least a part of the surface of the resin film in the resin through hole is located inside the through portion with respect to the surface of the insulating substrate in the through hole ,
The circuit device, wherein the circuit wiring film has a portion in the resin through hole that is thinner than a portion of the through hole that is located on the surface of the insulating substrate . The surface of the resin film in the resin through hole has a portion that is continuously inclined to the outside of the through portion from the opening on the upper surface side of the resin film of the resin through hole toward the opening on the lower surface side. The circuit device according to claim 1, wherein:

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