JP6511947B2 - High frequency module - Google Patents

Description

The present invention relates to a high frequency module including a sealing resin layer for covering a plurality of components mounted on a wiring substrate, and a shield wall for preventing mutual interference of noise between the components.

  The high frequency module mounted in a portable terminal device etc. may be provided with a shield layer for shielding electromagnetic waves. Among such modules, there is one in which a component mounted on a wiring substrate is coated with a mold resin, and a shield layer is provided so as to cover the surface of the mold resin.

  Such a shield layer is provided to shield noise from the outside, but when multiple components are mounted on the wiring board, the noise generated from these components interferes with other components There is a problem of Therefore, conventionally, a high frequency module provided with a shield that mutually shields noise between mounting components as well as the outside has been proposed. For example, as shown in FIG. 10, in the high frequency module 100 described in Patent Document 1, two components 102 are mounted on a wiring substrate 101, and both components 102 are sealed by a mold resin layer 103. Between the two parts of the mold resin layer 103, a slit S penetrating the mold resin layer 103 is formed. The shield layer 104 is formed of a conductive resin which covers the surface of the mold resin layer 103 and is filled in the slits S. The conductive resin filled in the slits S is electrically connected to the ground electrode 105 formed on the wiring substrate 101.

  In this case, the conductive resin that covers the surface of the mold resin layer 103 can shield external noise on the component 102. In addition, the conductive resin filled in the slits S can also prevent mutual interference of noise between the two components 102.

JP 2010-225620 A (paragraphs 0025 to 0026, see FIG. 1 etc.)

  By the way, since the above-mentioned shield layer 104 is formed by dicing, it is difficult to change the direction of the slit S halfway. Therefore, when it is desired to change the direction in the middle of the slit S, for example, the slit S may be formed by laser processing or drilling. In this case, there is a problem that disconnection or deformation of the wiring electrode formed on the wiring substrate 101 is caused by heat or shock when forming the slit S in the mold resin layer 103. Further, in the case where the slit S has such a shape as to be bent, such a problem becomes remarkable because the heat or impact by the laser beam or the drill is most strongly exerted immediately below the bent portion.

  The present invention has been made in view of the above problems, and in a high frequency module provided with a shield wall for preventing mutual interference of noise between components, reducing disconnection and deformation of a wiring electrode formed on a wiring substrate. With the goal.

In order to achieve the above object, a high frequency module according to the present invention comprises: a multilayer wiring board in which a plurality of insulating layers are stacked; a plurality of components mounted on one main surface of the multilayer wiring board; A sealing resin layer laminated on one main surface of the substrate and sealing the plurality of components, and disposed between a predetermined component and another component of the plurality of components in the sealing resin layer The shield wall and the first wiring layer disposed between the predetermined adjacent insulating layers of the multilayer wiring board, and the shield wall is formed in a linear shape in plan view of the multilayer wiring board The line has a bent portion, and the first wiring layer is electrically separated from the wiring electrode provided in the first wiring layer, and provided so as to overlap the bent portion in the plan view. It is characterized by having a first dummy electrode .

In this case, the first dummy electrode is provided in the first wiring layer inside the multilayer wiring board so as to overlap the bent portion of the shield wall in plan view. The first dummy electrode has a heat conductivity higher than that of the resin forming the sealing resin layer, and has ductility. Therefore, for example, the heat and impact acting on the wiring electrodes and the like of the multilayer wiring board at the time of laser processing and drilling can be alleviated by the first dummy electrode, so disconnection and deformation of the wiring electrodes formed on the multilayer wiring board are reduced can do.

In addition, by reducing the breakage or deformation of the wiring electrode, the characteristics of the wiring electrode can be stabilized. Further, the first dummy electrode is provided so as to overlap in a plan view with the bent portion of the shield wall where the heat and impact at the time of laser processing and drilling work most strongly. Therefore, the first dummy electrode can protect the wiring electrode immediately below the bent portion which is likely to be broken or deformed.

Further, the first dummy electrode may be provided so as to overlap the entire shield wall in the plan view. The portions overlapping the shield wall in plan view of the multilayer wiring board are susceptible to the effects of heat and impact during laser processing and drilling. Therefore, disconnection and deformation of the wiring electrode can be reliably reduced by providing the first dummy electrode so as to overlap the entire shield wall in plan view.

Further, the wiring electrodes may have the have an overlap with the shield wall first wiring electrode in the plan view. In this way, disconnection and deformation of the first wiring electrode due to the formation of the shield wall can be reduced by the presence of the first dummy electrode .

Further, the wiring electrode has a line-shaped second wiring electrode disposed so as to intersect the shield wall in the plan view, and the second wiring electrode is a line of a portion intersecting the shield wall The width may be formed thicker than the line width of the other part. In this case, in the second wiring electrode, the line width of the portion where the heat and impact at the time of formation of the shield wall are most strongly formed is formed large, so that the disconnection of the second wiring electrode can be reduced.

The semiconductor device further includes a second wiring layer disposed on the other main surface side of the multilayer wiring board than the first wiring layer, and disposed between the adjacent insulating layers, and the second wiring layer is viewed in plan view And the third wiring electrode in the form of a line disposed so as to intersect the shield wall, and the first wiring layer is the shield wall at a portion where the shield wall and the third wiring electrode intersect. And the third wiring electrode may be interposed between the second dummy electrode and the second wiring electrode.

According to this configuration, since the heat or shock upon forming the shield wall acting on the third wiring electrode can be mitigated by the second dummy electrode, the disconnection or deformation of the third wiring electrode resulting from the heat or shock upon forming the shield wall Can be reduced.

Further, the semiconductor device further includes a via conductor formed in the insulating layer between the first wiring layer and the shield wall, and the via conductor is disposed to overlap the bent portion in the plan view . It may be connected to the dummy electrode . In this case, since the via conductor is disposed at the place where the heat and the shock act most strongly when the shield wall is formed, the heat and the shock acting on the multilayer wiring board when the shield wall is formed can be further reduced.

The first dummy electrode and the first wiring electrode may be made of the same metal material. In this way, it is possible to easily form the first dummy electrode that mitigates heat and shock when forming the shield wall.

According to the present invention, the first dummy electrode is provided in the first wiring layer inside the multilayer wiring board so as to overlap the bent portion of the shield wall in plan view. The first dummy electrode has a heat conductivity higher than that of the resin forming the sealing resin layer, and has ductility. In this case, for example, the heat and impact acting on the wiring electrodes of the multilayer wiring board during laser processing or drilling can be alleviated by the first dummy electrode, so that disconnection or deformation of the wiring electrodes formed on the multilayer wiring board can be reduced. Can.

It is a top view of the high frequency module concerning a 1st embodiment of the present invention. It is AA arrow sectional drawing of FIG. It is a figure for demonstrating the dummy electrode of FIG. It is a figure which shows the modification of the wiring electrode of FIG. It is a top view of the high frequency module concerning a 2nd embodiment of the present invention. It is a figure which shows the high frequency module concerning 3rd Embodiment of this invention. It is sectional drawing of the high frequency module concerning 4th Embodiment of this invention. It is a figure for demonstrating the dummy electrode of FIG. It is a figure which shows the high frequency module concerning 5th Embodiment of this invention. It is sectional drawing of the conventional high frequency module.

First Embodiment
A high frequency module 1 a according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3. 1 is a plan view of the high-frequency module, FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1, and FIG. 3 is a view for explaining the dummy electrode 13a. Further, in FIG. 1, the top surface portion of the shield film 6 and the sealing resin layer 4 are not shown. FIG. 3 is a plan view of the wiring layer 10 provided with the dummy electrode 13a.

  As shown in FIGS. 1 and 2, the high frequency module 1 a according to this embodiment includes a multilayer wiring board 2, a plurality of components 3 a and 3 b mounted on the upper surface 20 a of the multilayer wiring board 2, and the multilayer wiring board 2. A sealing resin layer 4 stacked on the upper surface 20a of the first layer, a shield film 6 covering the surface of the sealing resin layer 4, and a shield wall 5 provided in the sealing resin layer 4; Is mounted on a mother board or the like of an electronic device to be used.

  The multilayer wiring board 2 is formed, for example, by laminating a plurality of insulating layers 2a to 2d formed of low-temperature cofired ceramic, glass epoxy resin, or the like. On the upper surface 20a of the multilayer wiring board 2 (corresponding to "one main surface of the multilayer wiring board" of the present invention), there are mounted electrodes 7 for mounting the components 3a and 3b and electrodes for shield wall 5 to be described later. A plurality of external electrodes 9 for external connection are formed on the lower surface 20 c (corresponding to “the other main surface of the multilayer wiring board of the present invention”) of the lower surface 20 c. Further, in this embodiment, wiring layers 10 to 12 having various wiring electrodes 10 a to 12 a and dummy electrodes 13 a described later are disposed between the adjacent insulating layers 2 a to 2 d. Thus, the multilayer wiring board 2 has a structure in which the insulating layers 2a to 2d and the wiring layers 10 to 12 are alternately stacked. Further, a plurality of via conductors 14 for connecting the wiring electrodes 10 a to 12 a of different wiring layers 10 to 12 are formed in the multilayer wiring board 2.

  The mounting electrode 7, the shield wall electrode 8, the external electrode 9, the wiring electrodes 10a to 12a, and the dummy electrode 13a are all formed of a metal generally employed as a wiring electrode, such as Cu, Ag, or Al. . Each via conductor 14 is formed of a metal such as Ag or Cu. Note that Ni / Au plating may be applied to each of the mounting electrodes 7, the shield wall electrode 8, and each of the external electrodes 9. Further, a metal member such as a solder film for protecting the shield wall electrode 8 may be stacked on the shield wall electrode 8, for example.

  Each of the components 3a and 3b is composed of a semiconductor element formed of a semiconductor such as Si or GaAs, or a chip component such as a chip inductor, a chip capacitor, or a chip resistor.

  The sealing resin layer 4 is laminated on the multilayer wiring board 2 so as to cover the upper surface 20 a of the wiring board 2 and the components 3 a and 3 b. The sealing resin layer 4 can be formed of a resin generally employed as a sealing resin such as an epoxy resin.

  The shield film 6 is for shielding external noise from the various wiring electrodes 10 a to 12 a and the components 3 a and 3 b in the multilayer wiring substrate 2, and the upper surface 20 a of the multilayer wiring substrate 2 of the sealing resin layer 4. And the sealing resin layer 4 so as to cover the opposite surface 4a and the peripheral side surface 4b. The shield film 6 is provided so as to further cover the side surface 20b of the multilayer wiring board 2, and the ground film (not shown) of the multilayer wiring board 2 exposed to the side surface 20b is connected to the shield film 6. May be

  Further, the shield film 6 may be formed in a multilayer structure having an adhesion film laminated on the surface of the sealing resin layer 4, a conductive film laminated on the adhesion film, and a protective film laminated on the conductive film. it can.

  The adhesion film is provided to increase the adhesion strength between the conductive film and the sealing resin layer 4 and can be formed of, for example, a metal such as SuS. The conductive film is a layer responsible for the substantial shielding function of the shield film 6, and can be formed of, for example, any metal of Cu, Ag, and Al. The protective film is provided to prevent the conductive film from being corroded or scratched, and can be formed of, for example, SUS.

  The shield wall 5 is disposed between the predetermined components 3 a and 3 b in the sealing resin layer 4. Specifically, as shown in FIG. 1, the shield wall 5 of this embodiment is disposed so as to divide the upper surface 20a of the multilayer wiring board 2 into two regions, and each component 3a between the divided regions is , 3b to prevent mutual interference of noise. Further, the upper end portion of the shield wall 5 is electrically connected to the top surface of the shield film 6.

  In addition, the shield wall 5 is formed in a linear shape (a linear shape, a curved shape) in a plan view (hereinafter referred to as a plan view) as viewed in a direction perpendicular to the upper surface 20a of the multilayer wiring board 2 There are (two in this embodiment) bent portions 5a. The shield wall electrode 8 is formed in a shape in which the shield wall 5 is projected in plan view (the plan view shape is substantially the same as the plan view shape of the shield wall 5), and is connected to the lower end portion of the shield wall 5. The shield wall electrode 8 is connected to a ground electrode (not shown) inside the multilayer wiring board 2. In addition, in FIG. 1, although the angle which the bending part 5a of the shield wall 5 forms is planarly viewed 90 degrees, in this invention, the angle which the bending part 5a forms may not be 90 degrees.

  The shield wall 5 is formed of, for example, a conductive paste containing a metal filler of any of Cu, Ag, and Al. The shield wall 5 can also be formed by forming a groove for the shield wall 5 in the sealing resin layer 4 by laser processing or the like and forming a metal film on the groove using a film forming technique.

  The uppermost wiring layer 10 (corresponding to the “first wiring layer” in the present invention) disposed between the uppermost insulating layer 2 a and the insulating layer 2 b adjacent thereto is, as shown in FIG. It has three dummy electrodes 13a (corresponding to the "first electrode portion" of the present invention) and a plurality of wiring electrodes 10a (corresponding to the "first wiring electrode" of the present invention). The two dummy electrodes 13a and the plurality of wiring electrodes 10a are typically made of the same material.

  At this time, the dummy electrode 13a is disposed so as to overlap the bent portion 5a of the shield wall 5 in a plan view. The shield wall 5 of this embodiment has two bent portions 5a, and the dummy electrodes 13a each having a rectangular shape in plan view are disposed on the both bent portions 5a so as to overlap each other in plan view. Here, the dummy electrode 13a is an electrode unrelated to the electric circuit formed in the high frequency module 1a, and is electrically separated from the wiring electrode 10a. The dummy electrode 13a is typically an electrode not connected to the power supply line or the ground line. However, as described later in the fourth embodiment, the “dummy electrode” of the present invention may be grounded by being electrically connected to the shield wall 5.

  The dummy electrode 13a may be formed so as to overlap the bent portion 5a of the shield wall 5 in plan view, and the shape in plan view can be appropriately changed. Further, in this embodiment, the dummy electrode 13a is provided on the uppermost wiring layer 10 close to the shield wall 5, but may be provided on the lower wiring layers 11 and 12 below this. However, in order to reduce the heat or shock acting on each of the wiring layers 10 to 12 when forming the groove for the shield wall 5, it is preferable to provide a dummy electrode on the wiring layer (for example, the wiring layer 10) close to the shield wall 5. preferable.

  Each of the wiring electrodes 10a is formed in a line shape and is disposed so as not to overlap with the shield wall 5 in a plan view. That is, each wiring electrode 10a of this embodiment is routed so as not to straddle the shield wall 5 in plan view. The wiring electrodes 11a and 12a of the wiring layers 11 and 12 other than the uppermost layer may also be formed so as not to cross the shield wall 5 in a plan view.

(Method of manufacturing high frequency module)
Next, a method of manufacturing the high frequency module 1a will be described. First, the multilayer wiring board 2 on which the mounting electrode 7, the shield wall electrode 8, the wiring layers 10 to 12, and the via conductor 9 are formed is prepared. At this time, the dummy electrode 13a of the uppermost wiring layer 10 is formed so as to be overlapped with the bent portion 5a of the shield wall 5 to be formed later in plan view. Each wiring electrode 10a of the wiring layer 10 is formed so as not to straddle the shield wall 5 in plan view.

  Next, the components 3a and 3b are mounted on the upper surface 20a of the multilayer wiring board 2 using a well-known surface mounting technique such as solder mounting.

  Next, the sealing resin layer 4 is laminated on the upper surface 20 a of the multilayer wiring board 2 so as to cover the components 3 a and 3 b. The sealing resin layer 4 can be formed by, for example, a coating method, a printing method, a transfer molding method, a compression molding method, or the like.

  Next, in order to planarize the opposite surface 4 a of the sealing resin layer 4, the surface of the sealing resin layer 4 is polished or ground.

  Next, a groove is formed by irradiating the portion where the shield wall 5 is disposed from the side of the opposite surface 4 a of the sealing resin layer 4 with a laser beam. At this time, the groove for the shield wall 5 is formed to have the bending portion 5a in a plan view. The groove for the shield wall 5 may be formed by drilling.

  Next, a conductive paste containing a Cu filler, for example, is filled in the groove formed in the sealing resin layer 4 by a coating method, a printing method or the like to form the shield wall 5.

  Next, the shield film 6 is formed to cover the surface (the opposite surface 4 a and the side surface 4 b) of the sealing resin layer 4 using a sputtering apparatus or a vacuum evaporation apparatus, and the high frequency module 1 a is completed. The shield wall 5 may be formed using the same film forming technique as the shield film 6. In this case, the groove for the shield wall 5 may be filled at the same time when the shield film 6 is formed.

  Therefore, according to the embodiment described above, the dummy electrode 13 a is provided in the wiring layer 10 of the uppermost layer of the multilayer wiring board 2 so as to overlap the bent portion 5 a of the shield wall 5 in plan view. The dummy electrode 13 a has higher thermal conductivity than the resin forming the sealing resin layer 4 and has ductility. Therefore, for example, since the heat and impact acting on the respective wiring layers 10 to 12 etc. of the multilayer wiring substrate 2 can be mitigated by the dummy electrode 13a at the time of laser processing or drilling of the sealing resin layer 4, each wiring electrode It is possible to reduce breakage or deformation of 10a to 12a. Further, the characteristics of the wiring electrodes 10a to 12a can be stabilized by reducing the disconnection and deformation of the wiring electrodes 10a to 12a.

  By the way, as described above, the shield wall 5 disposed between the components 3a and 3b is formed by forming a groove in the sealing resin layer 4 by laser processing, drilling, or the like, and filling the groove with the conductive paste. It is formed. In this case, when the bent portion 5a is present in the plan view shape of the shield wall 5, the heat energy of the laser beam at the time of forming the groove acts more strongly on the bent portion 5a than at other places. Then, the wiring electrodes 10a to 12a of the multilayer wiring board 2 (in particular, the wiring electrodes 10a to 12a arranged in the vicinity of the bent portion 5a in a plan view) are broken or deformed to be damaged.

  However, in this embodiment, the dummy electrode 13a is disposed so as to overlap the bent portion 5a of the shield wall 5 in a plan view, and is provided in the uppermost wiring layer 10, so that heat during laser processing or drilling Damage to the wiring electrodes 11a and 12a of the lower wiring layers 11 and 12 can be effectively reduced.

  Each wiring electrode 10a provided in the uppermost wiring layer 10 is disposed so as not to overlap the shield wall 5 in a plan view. In this manner, disconnection and deformation of each wiring electrode 10a are reduced by drawing each wiring electrode 10a away from immediately below the shield wall 5 where the heat or shock acting at the time of forming the groove for the shield wall 5 most strongly acts. can do.

(Modification of wiring electrode)
Next, a modified example of the wiring electrode 10a provided in the uppermost wiring layer 10a of this embodiment will be described with reference to FIG. FIG. 4 is a view showing a modification of the wiring electrode, which corresponds to FIG.

  In the wiring layer 10 described above, the wiring electrodes 10a are provided so as not to overlap the shield wall 5 in plan view, but for example, as shown in FIG. It may be arranged to intersect 5. In this case, in each wiring electrode 10b, the line width W1 of the portion intersecting the shield wall 5 is formed larger than the line width W2 of the other portion (W1> W2).

  According to this configuration, in the wiring electrode 10b, the line width W1 of the portion where the heat or shock acts most strongly at the time of forming the groove for the shield wall 5 is formed thicker than the other portions. The disconnection of 10 b can be reduced.

Second Embodiment
A high frequency module 1b according to a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a plan view of the high frequency module 1b, which corresponds to FIG.

  The high frequency module 1b according to this embodiment is different from the high frequency module 1a of the first embodiment described with reference to FIGS. 1 to 3 in that the configuration of the shield wall 5 is different as shown in FIG. is there. The other configuration is the same as that of the high frequency module 1a of the first embodiment, and thus the description will be omitted by giving the same reference numerals.

  In this case, the shield wall 5 is formed such that the width W3 of the bent portion 5a in plan view is larger than the width W4 than the other portions (W3> W4). Further, the shield wall electrode 8 is formed in a shape in which the shield wall 5 is projected in plan view (the plan view shape is substantially the same as the plan view shape of the shield wall 5), and is connected to the lower end portion of the shield wall 5 Ru.

  According to this configuration, for example, when the portion overlapping the bent portion 5a of the shield wall 5 in plan view of the shield wall electrode 8 and the ground electrode inside the multilayer wiring board 2 are connected via the via conductor 14, the shield wall It is possible to easily increase the connection area between 5 and the ground electrode. Further, as the connection area between the shield wall 5 and the ground electrode is increased, the connection resistance between the both is reduced to improve the shield characteristics, and the connection reliability between the both is improved.

Third Embodiment
A high frequency module 1c according to a third embodiment of the present invention will be described with reference to FIG. FIG. 6 is a view showing the high frequency module 1c, which corresponds to FIG. Further, in FIG. 3, the respective wiring electrodes 10 a of the uppermost wiring layer 10 are not shown.

  The high-frequency module 1c according to this embodiment is different from the high-frequency module 1a according to the first embodiment described with reference to FIGS. 1 to 3 in that the shape of the dummy electrode 13b is different as shown in FIG. is there. The other configuration is the same as that of the high frequency module 1a of the first embodiment, and thus the description will be omitted by giving the same reference numerals.

  In this case, the dummy electrode 13b provided in the uppermost wiring layer 10 has the same plan view shape as the plan view shape of the shield wall 5 in the same manner as the shield wall electrode 8, that is, the shield wall 5 in plan view. It is formed in a line so that it may overlap with the whole of. The width in plan view of the dummy electrode 13 b may be larger than that of the shield wall 5.

  The region overlapping with the shield wall 5 in plan view of the multilayer wiring board 2 is susceptible to the influence of the laser light and the heat and impact of the drill when forming the groove for the shield wall 5. Therefore, by providing the dummy electrode 13b so as to overlap the entire shield wall 5 in a plan view, disconnection or deformation of each of the wiring electrodes 11a, 12a provided in the wiring layers 11, 12 lower than the dummy electrode 13b. It can be reliably reduced.

Fourth Embodiment
A high frequency module 1 d according to a fourth embodiment of the present invention will be described with reference to FIGS. 7 and 8. 7 is a cross-sectional view of the high frequency module 1d corresponding to FIG. 1, and FIG. 8 is a plan view of the wiring layer 10 of the high frequency module 1d. Further, in FIG. 8, the wiring electrodes 10 a of the wiring layer 10 are not shown.

  The high frequency module 1d according to this embodiment is different from the high frequency module 1a of the first embodiment described with reference to FIGS. 1 to 3 in the dummy electrode 13a and the shield wall electrode 8 as shown in FIG. Are connected by the dummy via conductor 14a (corresponding to the "via conductor" of the present invention) formed in the uppermost insulating layer 2a. The other configuration is the same as that of the high frequency module 1a of the first embodiment, and thus the description will be omitted by giving the same reference numerals.

  According to this configuration, since the via conductor 14a is disposed at the place where the heat and the shock are most strongly exerted when the shield wall 5 is formed, the heat and the shock acting on the multilayer wiring board 2 when the shield wall 5 is formed are further reduced. be able to. The dummy via conductor 14a may be disposed so as to overlap the bent portion 5a of the shield wall 5 in a plan view, and may not necessarily connect the shield wall electrode 8 and the dummy electrode 13a. Further, another dummy via conductor may be disposed in a portion overlapping the shield wall 5 in plan view other than the bending portion 5a.

Fifth Embodiment
A high frequency module 1e according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 9 is a view showing the high frequency module 1 e, which corresponds to FIG. Further, in FIG. 9, the wiring electrodes 10 a of the wiring layer 10 are not shown.

  The high frequency module 1e according to this embodiment is different from the high frequency module 1a of the first embodiment described with reference to FIGS. 1 to 3 in the configuration of the dummy electrodes 13a and 13c as shown in FIG. And the configuration of the second top wiring layer 11 is different. The other configuration is the same as that of the high frequency module 1a of the first embodiment, and thus the description will be omitted by giving the same reference numerals.

  In this case, the wiring layer 11 (corresponding to the “second wiring layer” of the present invention) which is one layer lower than the wiring layer 10 of the uppermost layer is a line-shaped wiring disposed to intersect the shield wall 5 in plan view. A plurality of wiring electrodes 11 a (corresponding to “third wiring electrode” in the present invention) are provided. Further, the uppermost wiring layer 10 is added to two dummy electrodes 13a (corresponding to the “first electrode portion” of the present invention) disposed so as to overlap the bent portion 5a of the shield wall 5 in plan view, and two more. Dummy electrode 13c (corresponding to the "second electrode portion" in the present invention).

  Both of the dummy electrodes 13c are disposed so as to be interposed between the shield wall 5 and each wiring electrode 11a at a portion where the shield wall 5 and each wiring electrode 11a intersect in plan view. The two dummy electrodes 13c need not necessarily be provided in the uppermost wiring layer 10. For example, in the case where the wiring electrode intersecting the shield wall 5 in a lower layer in plan view is a wiring having the wiring electrode It may be provided in any of the wiring layers between the layer and the shield wall 5. Further, the shape and the number in plan view of both dummy electrodes 13 c can be appropriately changed in accordance with the configuration and the number of wiring of the wiring electrodes 11 a intersecting the shield wall 5.

  According to this configuration, the heat and impact at the time of formation of the shield wall 5 acting on each wiring electrode 11a of the second uppermost wiring layer 11 can be mitigated by the dummy electrode 13c. It is possible to reduce the disconnection and deformation of each wiring electrode 11 a caused by the impact.

  The present invention is not limited to the above-described embodiments, and various modifications can be made other than those described above without departing from the scope of the invention. For example, the configurations of the above-described embodiments and modifications may be combined.

  In each of the above-described embodiments, the shield wall 5 is disposed so as to divide the upper surface 20a of the multilayer wiring board 2 into two regions in a plan view. You may form so that the circumference | surroundings of components 3a and 3b may be enclosed.

  Further, the number of insulating layers and wiring layers constituting the multilayer wiring board 2 can be appropriately changed.

  Further, the present invention can be applied to various high frequency modules provided with a sealing resin layer for covering a component mounted on a wiring substrate and a shield wall for preventing mutual interference of noise between the components.

1a to 1e High Frequency Module 2 Multilayer Wiring Board 2a to 2d Insulating Layers 3a and 3b Parts 4 Sealing Resin Layer 5 Shield Wall 5a Bend 10 Wiring Layer (First Wiring Layer)
10a Wiring electrode (first wiring electrode)
10b Wiring electrode (second wiring electrode)
11 Wiring layer (second wiring layer)
11a Wiring electrode (third wiring electrode)
13a, 13b Dummy electrode (first electrode portion)
13c Dummy electrode (second electrode part)
14a Dummy via conductor (via conductor)

Claims (7)

A multilayer wiring board formed by laminating a plurality of insulating layers;
A plurality of components mounted on one main surface of the multilayer wiring board;
A sealing resin layer which is laminated on one main surface of the multilayer wiring substrate and seals the plurality of components;
A shield wall disposed between a predetermined part of the plurality of parts and another part in the sealing resin layer;
And a first wiring layer disposed between the predetermined adjacent insulating layers of the multilayer wiring board,
When the multilayer wiring board is viewed in plan, the shield wall is formed in a linear shape, and the line has a bent portion,
The first wiring layer is electrically separated from the wiring electrode provided in the first wiring layer, and has a first dummy electrode provided so as to overlap the bent portion in the plan view. High frequency module. The high frequency module according to claim 1, wherein the first dummy electrode is provided so as to overlap the entire shield wall in the plan view. The high frequency module according to claim 1 or 2, wherein the wiring electrode has a first wiring electrode which does not overlap the shield wall in the plan view. The wiring electrode has a line-shaped second wiring electrode disposed to intersect the shield wall in the plan view,
2. The high frequency module according to claim 1, wherein a line width of a portion intersecting the shield wall of the second wiring electrode is formed wider than a line width of another portion. And a second wiring layer disposed on the other main surface side of the multilayer wiring board than the first wiring layer, and disposed between the adjacent insulating layers.
The second wiring layer has a line-shaped third wiring electrode disposed to intersect the shield wall in the plan view,
The first wiring layer has a second dummy electrode disposed so as to be interposed between the shield wall and the third wiring electrode at a portion where the shield wall and the third wiring electrode intersect. The high frequency module according to claim 1, characterized in that: A via conductor formed in the insulating layer between the first wiring layer and the shield wall;
The high frequency module according to any one of claims 1 to 5, wherein the via conductor is disposed to overlap the bent portion in the plan view and connected to the first dummy electrode . The high frequency module according to claim 3 , wherein the first dummy electrode and the first wiring electrode are made of the same metal material.

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