JP6583350B2 - Imaging device and imaging device - Google Patents

Description

The present invention relates to an imaging device and an imaging element .

  In an imaging device in which a plurality of pixels are two-dimensionally arranged, a high-sensitivity light-receiving element having a large aperture area and a low-sensitivity light-receiving element having a small aperture area are arranged in one pixel, and these output signals are used. An imaging device that generates an image with a wide dynamic range is known (see Patent Document 1).

Japanese Patent No. 4018820

  In the imaging device described above, since the area of one pixel is divided by the light receiving element having a large aperture area and the light receiving element having a small aperture area, a region in which incident light cannot be received is generated in the pixel, and the incident light The usage efficiency of was poor.

An imaging device according to a first aspect of the invention includes a first photoelectric conversion element having a first photoelectric conversion unit that converts light from a microlens to which light is incident into an electric charge, and light transmitted through the first photoelectric conversion unit. Disposed between the first photoelectric conversion element and the second photoelectric conversion element in the optical axis direction of the microlens , and at least the first When the luminance difference between the wiring electrically connected to one photoelectric conversion element and the subject is equal to or greater than a predetermined value, the photoelectric conversion with low sensitivity among the first photoelectric conversion element and the second photoelectric conversion element the charge storage time of the element, among the first photoelectric conversion element and the second photoelectric conversion element, and a control unit made shorter than the storage time of the charges in the high photoelectric conversion element sensitivity.
An imaging device according to a second aspect of the invention includes a first photoelectric conversion element having a first photoelectric conversion unit that converts light into electric charge, and the first photoelectric conversion unit electrically connected to the first photoelectric conversion element. A wiring that forms at least part of an opening through which light transmitted through the second photoelectric conversion element and a second photoelectric conversion element that includes a second photoelectric conversion unit that converts light passing through the opening into an electric charge, The photoelectric conversion element and the second photoelectric conversion element are low-sensitivity photoelectric conversion elements among the first photoelectric conversion element and the second photoelectric conversion element when the luminance difference of the subject is equal to or greater than a predetermined value. The charge accumulation time is controlled to be shorter than the charge accumulation time of the highly sensitive photoelectric conversion element among the first photoelectric conversion element and the second photoelectric conversion element.

  According to the present invention, the utilization efficiency of incident light can be increased.

It is a block diagram explaining the structural example of a digital camera. It is a figure explaining the outline | summary of an image pick-up element. It is a figure explaining the example of arrangement | positioning of a pixel. It is a figure explaining the example of a section composition of an image sensor. It is a figure explaining the circuit structural example of a pixel. It is a figure explaining a dynamic range expansion process.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. FIG. 1 is a diagram illustrating a configuration of a digital camera 1 according to an embodiment of the present invention. The digital camera 1 includes a control unit 11, an imaging unit 12, an operation unit 13, an image processing unit 14, a liquid crystal monitor 15, and a buffer memory 16. In addition, a memory card 17 is attached to the digital camera 1.

  The control unit 11 includes a microprocessor and its peripheral circuits, and performs various controls of the digital camera 1 by executing a control program stored in a ROM (not shown). The imaging unit 12 includes an imaging device 21, an amplification circuit 22, and an AD conversion circuit 23.

  The image sensor 21 is composed of a plurality of pixels, receives a light beam from a subject via a photographing optical system (not shown), performs photoelectric conversion, and outputs an analog image signal. The amplifier circuit 22 amplifies the analog image signal output from the image sensor 21 with a predetermined amplification factor (gain) and outputs the amplified signal to the AD conversion circuit 23. The AD conversion circuit 23 performs AD conversion on the analog image signal and outputs a digital image signal. The control unit 11 stores the digital image signal output from the imaging unit 12 in the buffer memory 16.

  The digital image signal stored in the buffer memory 16 is subjected to various image processing in the image processing unit 14 and displayed on the liquid crystal monitor 15 or stored in the memory card 17. The memory card 17 is composed of a non-volatile flash memory or the like and is detachable from the digital camera 1.

  The operation unit 13 includes various operation buttons such as a release button, a mode switching button, and a power button, and is operated by a photographer. The operation unit 13 outputs an operation signal corresponding to the operation of each operation button by the photographer to the control unit 11. The image processing unit 14 is configured by an ASIC or the like. The image processing unit 14 performs various types of image processing such as interpolation, compression, and white balance on the image data captured by the imaging unit 12, and dynamic range expansion processing described later.

<Description of image sensor>
FIG. 2 is a diagram showing an outline of the image sensor 21 according to the present embodiment. 2 shows a state in which the light incident side of the image sensor 21 is the upper side. Therefore, in the following description, the direction on the light incident side of the image sensor 21 is “upper” or “upper”, and the direction opposite to the light incident side is “lower” or “lower”. The image sensor 21 includes an upper photoelectric conversion layer 31 and a lower photoelectric conversion layer 32. The upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 are stacked on the same optical path. The upper photoelectric conversion layer 31 is composed of an organic photoelectric film that absorbs (photoelectric converts) light of a predetermined color component (details will be described later). The light of the color component that has not been absorbed (photoelectric conversion) by the upper photoelectric conversion layer 31 passes through the upper photoelectric conversion layer 31 and enters the lower photoelectric conversion layer 32, and is photoelectrically converted by the lower photoelectric conversion layer 32. The lower photoelectric conversion layer 32 performs photoelectric conversion using a photodiode. The color component photoelectrically converted by the upper photoelectric conversion layer 31 and the color component photoelectrically converted by the lower photoelectric conversion layer 32 have a complementary color relationship. The upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 are formed on the same semiconductor substrate, and each pixel position corresponds to one to one. For example, the pixel in the first row and the first column of the upper photoelectric conversion layer 31 corresponds to the pixel in the first row and the first column of the lower photoelectric conversion layer 32.

  FIG. 3A is a diagram illustrating a pixel arrangement of the upper photoelectric conversion layer 31. In FIG. 3A, the horizontal direction is the x-axis, the vertical direction is the y-axis, and the coordinates of the pixel P are expressed as P (x, y). In the example of the upper photoelectric conversion layer 31 shown in FIG. 3A, organic photoelectric films that photoelectrically convert Mg (magenta) and Ye (yellow) light are alternately arranged in each pixel in an odd row, and each pixel in an even row. Organic photoelectric films that photoelectrically convert Cy (cyan) and Mg (magenta) light are alternately arranged in the pixel. Light that is not received by each pixel is transmitted. For example, the pixel P (1,1) photoelectrically converts Mg light and transmits G (green) light which is a complementary color of Mg. Similarly, the pixel P (2,1) photoelectrically converts Ye light and transmits B (blue) light, which is a complementary color of Ye, and the pixel P (1,2) photoelectrically converts Cy light. Transmits light of R (red) which is a complementary color of Cy.

  FIG. 3B is a diagram illustrating a pixel arrangement of the lower photoelectric conversion layer 32. Each pixel position shown in FIG. 3B is the same as that in FIG. For example, the pixel (1, 1) of the lower photoelectric conversion layer 32 corresponds to the pixel (1, 1) of the upper photoelectric conversion layer 31. In FIG. 3B, the lower photoelectric conversion layer 32 is not provided with a color filter or the like, and is a color component that passes through the upper photoelectric conversion layer 31 (that is, a color component that is absorbed and photoelectrically converted by the organic photoelectric film). (Complementary color) is photoelectrically converted. Therefore, as shown in FIG. 3C, in the lower photoelectric conversion layer 32, the image signals of the G and B color components are output in the odd-numbered pixels, and the image signals of the R and G color components are output in the even-numbered pixels. can get. For example, in the pixel P (1, 1), an image signal of a G component that is complementary to Mg is obtained. Similarly, an image signal of a complementary B component of Ye is obtained at the pixel P (2,1), and an image signal of an R component of a complementary color of Cy is obtained at the pixel P (1,2).

  Thus, in the imaging device 21 according to the present embodiment, the upper photoelectric conversion layer 31 formed of an organic photoelectric film plays a role of a color filter with respect to the lower photoelectric conversion layer 32, and the upper photoelectric conversion layer 32 to the upper photoelectric conversion layer 32. A complementary color image (bayer array image in the example of FIG. 3) of the conversion layer 31 is obtained. Therefore, in the image sensor 21 according to the present embodiment, a CMY image composed of three colors of Cy, Mg, and Ye can be acquired from the upper photoelectric conversion layer 31, and R, G, and B can be acquired from the lower photoelectric conversion layer 32. Can be obtained, and two color image signals can be obtained by one photographing process.

  FIG. 4 is a diagram illustrating a part of a cross section of the image sensor 21. As shown in FIG. 4, in the imaging element 21, a lower photoelectric conversion layer 32 formed on a silicon substrate and an upper photoelectric conversion layer 31 using an organic photoelectric film are stacked via a wiring layer 40. Above the upper photoelectric conversion layer 31, one microlens ML is formed for one pixel. For example, in the upper photoelectric conversion layer 31, the light receiving part PC (1,1) by the organic photoelectric film that constitutes the photoelectric conversion part of the pixel P (1,1) is the subject incident from the microlens ML (1,1). The light of Mg in the light is photoelectrically converted to transmit the light of G which is a complementary color. In the lower photoelectric conversion layer 32, the photodiode PD (1, 1) constituting the pixel P (1, 1) receives the G light transmitted through the light receiving portion PC (1, 1) of the upper photoelectric conversion layer 31. To photoelectrically convert.

  FIG. 5 is a diagram illustrating a circuit configuration of one pixel P (x, y) in the image sensor 21. The pixel P (x, y) includes a photodiode PD, a transfer transistor Tx, a reset transistor R2, an output transistor SF2, and a selection transistor SEL2 as a circuit for configuring the lower photoelectric conversion layer 32. The photodiode PD accumulates charges according to the amount of incident light. The transfer transistor Tx transfers the charge accumulated in the photodiode PD to the floating diffusion region (FD portion) on the output transistor SF2 side. The output transistor SF2 constitutes a current source PW2 and a source follower via the selection transistor SEL2, and outputs an electric signal corresponding to the electric charge accumulated in the FD section as an output signal OUT2 to the vertical signal line VLINE2. The reset transistor R2 resets the charge in the FD portion to the power supply voltage Vcc.

  Further, the pixel P (x, y) includes a light receiving unit PC using an organic photoelectric film, a reset transistor R1, an output transistor SF1, and a selection transistor SEL1 as a circuit for configuring the upper photoelectric conversion layer 31. The light receiving unit PC using an organic photoelectric film converts non-transmitted light into an electrical signal corresponding to the amount of light, and outputs a vertical signal line as an output signal OUT1 via a selection transistor SEL1 and an output transistor SF1 constituting a source follower. Output to VLINE1. The reset transistor R1 resets the output signal of the light receiving unit PC to the reference voltage Vref. Further, a high voltage Vpc is applied for the operation of the organic photoelectric film. Each transistor is composed of a MOS_FET.

  Here, the operation of the circuit according to the lower photoelectric conversion layer 32 will be described. First, when the selection signal φSEL2 becomes “High”, the selection transistor SEL2 is turned on. Next, when the reset signal φR2 becomes “High”, the FD section resets the power supply voltage Vcc, and the output signal OUT2 also becomes a reset level. Then, after the reset signal φR2 becomes “Low”, the transfer signal φTx becomes “High”, the charge accumulated in the photodiode PD is transferred to the FD portion, and the output signal OUT2 changes according to the amount of charge. Start and stabilize. Then, the transfer signal φTx becomes “Low”, and the signal level of the output signal OUT2 read from the pixel to the vertical signal line VLINE2 is determined. The output signal OUT2 of each pixel read out to the vertical signal line VLINE2 is temporarily held for each row in a horizontal output circuit (not shown) and then output from the image sensor 21. In this way, a signal is read from each pixel of the lower photoelectric conversion layer 32 of the image sensor 21.

  The operation of the circuit relating to the upper photoelectric conversion layer 31 will be described. First, when the selection signal φSEL1 becomes “High”, the selection transistor SEL1 is turned on. Next, the reset signal φR1 becomes “High”, and the output signal OUT1 also becomes the reset level. Then, immediately after the reset signal φR1 becomes “Low”, the charge accumulation of the light receiving portion PC by the organic photoelectric film is started, and the output signal OUT1 changes according to the amount of charge. The output signal OUT1 is temporarily held for each row in a horizontal output circuit (not shown), and then output from the image sensor 21. In this way, a signal is read from each pixel of the upper photoelectric conversion layer 31 of the image sensor 21.

<Dynamic range expansion processing>
In the digital camera 1 of the present embodiment, the image signal output from the upper photoelectric conversion layer 31 of the image sensor 21 and the image signal output from the lower photoelectric conversion layer 32 are combined to generate an image with an expanded dynamic range. Dynamic range expansion processing is performed. Hereinafter, the dynamic range expansion process will be described.

  In the image sensor 21, the sensitivity (light reception sensitivity) for converting incident light into an electrical signal is different between the pixels of the upper photoelectric conversion layer 31 and the pixels of the lower photoelectric conversion layer 32. In the present embodiment, the pixel sensitivity of the upper photoelectric conversion layer 31 is higher than the pixel sensitivity of the lower photoelectric conversion layer 32. This is because CyMgYe received by the upper photoelectric conversion layer 31 has a wider wavelength range than RGB received by the lower photoelectric conversion layer 32, and the upper photoelectric conversion layer 31 is compared with the lower photoelectric conversion layer 32. The reason is that light collection is advantageous because optical vignetting is reduced. Therefore, the lower photoelectric conversion layer 32 outputs an image captured with a relatively low sensitivity (low sensitivity image), and the upper photoelectric conversion layer 31 outputs an image captured with a relatively high sensitivity (high sensitivity image). Is done.

  FIG. 6A is a graph showing the relationship between the amount of received light and the digital output value in each pixel of the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32. In FIG. 6A, a line L1 indicates the relationship between the amount of received light and the digital output value in the pixels of the upper photoelectric conversion layer 31. A line L2 indicates the relationship between the amount of received light and the digital output value in the pixels of the lower photoelectric conversion layer 32. Since the pixels of the upper photoelectric conversion layer 31 are more sensitive than the pixels of the lower photoelectric conversion layer 32, the output value of the pixels of the upper photoelectric conversion layer 31 is larger than the output value of the pixels of the lower photoelectric conversion layer 32 at the same received light amount. It has become. Further, in the range where the amount of received light is Pm or less, the output value of the pixel of the upper photoelectric conversion layer 31 increases linearly as the amount of received light increases. When the amount of received light is Pm or more, the output value of the pixel of the upper photoelectric conversion layer 31 becomes a saturation value Vm and becomes constant. On the other hand, even if the received light amount becomes Pm, the output value of the pixel of the lower photoelectric conversion layer 32 is not saturated, and increases linearly as the received light amount increases.

  When the release button is pressed by the user, the control unit 11 causes the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 to perform photoelectric conversion for recording simultaneously, and causes the buffer memory 16 to store these output signals. In the present embodiment, it is assumed that the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 have the same exposure time. The image processing unit 14 combines the output signal from the pixel of the upper photoelectric conversion layer 31 and the output signal from the pixel of the lower photoelectric conversion layer 32 stored in the buffer memory 16, thereby expanding one dynamic range. Generate an image.

  FIG. 6B is a graph for explaining the relationship between the light reception amount of the pixel and the pixel value after the dynamic range is expanded. In FIG. 6B, a line L3 indicates the relationship between the light reception amount of the pixel and the pixel value after the dynamic range is expanded. Here, for example, a value of about 70 to 80% of the saturation value Vm is set as the threshold value Vt. A received light amount at which the output value of the pixel of the upper photoelectric conversion layer 31 becomes the threshold value Vt is defined as Pt. An output value output by the pixels of the lower photoelectric conversion layer 32 at the same received light amount Pt is Vu. Vu is lower than the threshold value Vt. The image processing unit 14 uses an output signal from a pixel whose output value in the upper photoelectric conversion layer 31 is lower than the threshold value Vt and an output signal from a pixel whose output value in the lower photoelectric conversion layer 32 is higher than Vu, Generate an image with an expanded dynamic range. That is, when the amount of received light is smaller than Pt, the output signal of the upper photoelectric conversion layer 31 is used, and when the amount of received light is larger than Pt, the output signal of the lower photoelectric conversion layer 32 is used. At this time, for the output signal from the pixel of the lower photoelectric conversion layer 32, the image processing unit 14 adds the difference value (Vt−Vu) between Vt and Vu to the output value, and then outputs the output signal from the pixel of the upper photoelectric conversion layer 31. Combine with output signal. As described above, the image processing unit 14 uses the output signal from the pixel of the upper photoelectric conversion layer 31 having high sensitivity for the dark part of the image, so that it is possible to prevent black crushing and improve the S / N ratio. Since the output signal from the pixel of the lower photoelectric conversion layer 32, which has a low sensitivity, is used for the bright part of (2), saturation (whiteout) can be prevented, and an image with an expanded dynamic range can be generated.

According to the embodiment described above, the following operational effects can be obtained.
In the digital camera 1, the image pickup device 21 is configured by laminating an upper photoelectric conversion layer 31 and a lower photoelectric conversion layer 32, and the image processing unit 14 includes an upper photoelectric conversion layer 31 and a lower photoelectric layer having different pixel sensitivities. The output signals from the conversion layer 32 are combined to generate an image with an expanded dynamic range. In the image sensor 21 of the present embodiment, the light transmitted through the upper photoelectric conversion layer 31 is received by the lower photoelectric conversion layer 32, so that the area of one pixel is large in aperture area as in the conventional image sensor described above. And the use efficiency of incident light can be increased as compared with the case where the light receiving element is divided by a light receiving element having a small aperture area. Therefore, in the present embodiment, noise can be reduced even when the image sensor 21 is highly sensitive. In addition, since the upper photoelectric conversion layer 31 replaces the color filter necessary for the conventional image sensor, incident light that has been absorbed by the color filter can be effectively used by the upper photoelectric conversion layer 31. .

(Modification 1)
In the above-described embodiment, the example in which the image signals of the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 having different pixel sensitivities are combined to generate an image with an expanded dynamic range has been described. However, depending on the subject, the luminance difference between a bright part and a dark part is large, and an expanded dynamic range may be required. Therefore, the exposure time for the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 may be further changed.

  In this case, the control unit 11 sets the exposure time (charge accumulation time) of the pixels of the lower photoelectric conversion layer 32 having low sensitivity to be shorter than the exposure time of the pixels of the upper photoelectric conversion layer 31 having high sensitivity. As a result, the lower photoelectric conversion layer 32 receives less light than the upper photoelectric conversion layer 31, and the bright portion of the image is less likely to be saturated in the pixels of the lower photoelectric conversion layer 32. Therefore, the upper limit side of the dynamic range is widened. be able to. On the other hand, the upper photoelectric conversion layer 31 receives a larger amount of light than the lower photoelectric conversion layer 32, and the S / N ratio is improved in the pixels of the upper photoelectric conversion layer 31 in the dark part of the image. Can be spread. Therefore, the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 generate an image with a larger dynamic range compared to the case where only the pixel sensitivity differs because the exposure time is different in addition to the pixel sensitivity. be able to.

  In addition, a mode (first mode) in which dynamic range expansion processing is performed on the basis of a signal captured in a state where only the pixel sensitivity is different between the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 (that is, the exposure time is the same). The mode (second mode) in which the dynamic range expansion process is performed may be switched based on a signal captured in a state where both the pixel sensitivity and the exposure time are different.

  Since the second mode can expand the dynamic range more than the first mode, it is considered that the second mode is preferable to the first mode when photographing a subject with a large luminance difference. However, in the second mode, at least one of the exposure start time and the exposure end time of the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32 must be changed. And the lower photoelectric conversion layer 32 are considered to be preferable in the first mode in which the exposure start and the exposure end can be completed simultaneously.

  Therefore, for example, the control unit 11 divides the photographing screen of the digital camera 1 into a plurality of regions, and detects the luminance of each region by a photometric sensor (not shown). If the difference between the detected maximum and minimum luminance values is large, the subject is considered to have a large luminance difference. Therefore, the control unit 11 switches to the second mode when the difference between the detected maximum and minimum luminance values is larger than the predetermined value, and switches to the first mode when the difference is smaller than the predetermined value. May be.

  In addition, for example, the control unit 11 causes the image sensor 21 to perform image capturing at a predetermined frame rate, and detects a change amount between adjacent frames in the frame image captured by the image sensor 21. When the amount of change is large, it is considered that the subject moves quickly. Therefore, the control unit 11 may switch to the first mode when the change amount is larger than the predetermined value, and may switch to the second mode when the change amount is smaller than the predetermined value.

(Modification 2)
In the above-described embodiment, the example in which the output range from the pixel of the upper photoelectric conversion layer 31 and the output signal from the pixel of the lower photoelectric conversion layer 32 are combined to expand the dynamic range has been described. However, an addition signal obtained by adding the output signal from the pixel of the upper photoelectric conversion layer 31 and the output signal from the pixel of the lower photoelectric conversion layer 32 is generated, and the dynamic range is further expanded using this addition signal. Also good.

  For example, the dynamic range may be expanded by combining the output signal from the pixel of the lower photoelectric conversion layer 32 and the addition signal. In this case, the image processing unit 14 uses the output signal from the pixel of the lower photoelectric conversion layer 32 for the bright part of the image and expands the dynamic range using the addition signal for the dark part of the image.

  Further, for example, the dynamic range may be expanded by combining the output signal from the pixel of the upper photoelectric conversion layer 31, the output signal from the pixel of the lower photoelectric conversion layer 32, and the addition signal. In this case, the image processing unit 14 uses the output signal from the pixel of the lower photoelectric conversion layer 32 for the bright part of the image, and outputs the signal from the pixel of the upper photoelectric conversion layer 31 for the moderately bright part of the image. The output signal is used, and the dynamic range is expanded by using the addition signal for the dark part of the image.

(Modification 3)
In the above-described embodiment, the example in which the pixels of the lower photoelectric conversion layer 32 have low sensitivity and the pixels of the upper photoelectric conversion layer 31 have high sensitivity has been described. Conversely, the pixels of the lower photoelectric conversion layer 32 have high sensitivity. The pixels of the upper photoelectric conversion layer 31 may have low sensitivity.

(Modification 4)
The pixel array of the image sensor 21 described in the above-described embodiment is an example, and other pixel arrays may be used. For example, pixels that photoelectrically convert R, G, and B light may be disposed in the upper photoelectric conversion layer 31, and Cy, Mg, and Ye light may be photoelectrically converted in the lower photoelectric conversion layer 32.

(Modification 5)
In the above-described embodiment, the example in which the dynamic range expansion process is performed using the imaging element 21 in which the two photoelectric conversion layers (the upper photoelectric conversion layer 31 and the lower photoelectric conversion layer 32) are stacked has been described. However, the dynamic range expansion process may be performed using an imaging element in which not only two layers but also three or more photoelectric conversion layers are stacked. For example, an imaging device is provided in which a photoelectric conversion layer having a high sensitivity pixel, a photoelectric conversion layer having a medium sensitivity pixel, and a photoelectric conversion layer having a low sensitivity pixel are stacked. The image sensor is caused to capture an image. The output signal of the photoelectric conversion layer having low sensitivity pixels is used for the bright part of the image, and the output signal of the photoelectric conversion layer having medium sensitivity pixels is used for the intermediate brightness part of the image. For the dark part of the image, the output signal of the photoelectric conversion layer having highly sensitive pixels is used to expand the dynamic range.

  Although various embodiments and modifications have been described above, the present invention is not limited to these contents. Other embodiments conceivable within the scope of the technical idea of the present invention are also included in the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Digital camera, 11 ... Control part, 14 ... Image processing part, 21 ... Image sensor, 31 ... Upper photoelectric conversion layer, 32 ... Lower photoelectric conversion layer

Claims (23)

A first photoelectric conversion element having a first photoelectric conversion unit that converts light from a microlens to which light is incident into electric charge;
A second photoelectric conversion element having a second photoelectric conversion unit that converts light transmitted through the first photoelectric conversion unit into electric charge;
A wiring disposed between the first photoelectric conversion element and the second photoelectric conversion element in the optical axis direction of the microlens , and at least electrically connected to the first photoelectric conversion element;
When the luminance difference of the subject is equal to or greater than a predetermined value, the charge accumulation time of the low-sensitivity photoelectric conversion element among the first photoelectric conversion element and the second photoelectric conversion element is determined as the first photoelectric conversion. A control unit that shortens the charge accumulation time of a highly sensitive photoelectric conversion element among the element and the second photoelectric conversion element;
An imaging apparatus comprising: The imaging device according to claim 1, wherein the wiring forms at least a part of an opening through which light transmitted through the first photoelectric conversion unit passes.   The imaging device according to claim 1, wherein the second photoelectric conversion element is electrically connected to the first photoelectric conversion element through the wiring. A first signal line from which a first signal generated by the charge converted by the first photoelectric conversion unit is output;
A second signal line different from the first signal line from which a second signal generated by the charge converted by the second photoelectric conversion unit is output;
The imaging device according to claim 1, further comprising: A first selection transistor for outputting the first signal to the first signal line;
A second selection transistor different from the first selection transistor for outputting the second signal to the second signal line;
An imaging device according to claim 4. A first amplification transistor connected to the first selection transistor;
A second amplification transistor different from the first amplification transistor connected to the second selection transistor;
An imaging device according to claim 5. A first reset transistor connected to a first gate of the first amplifying transistor and setting the first gate to a predetermined voltage;
A second reset transistor connected to the second gate of the second amplification transistor and different from the first reset transistor for setting the second gate to a predetermined voltage;
An imaging apparatus according to claim 6. The control unit controls a first accumulation time for accumulating the charge of the photoelectric conversion element with low sensitivity and a second accumulation time for accumulating the charge of the photoelectric conversion element with high sensitivity based on the moving speed information of the subject. the imaging apparatus according to any one of claims 1 to 7 for. And a generation unit configured to generate image data using a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The imaging device according to any one of claims 1 to 8 . The first photoelectric conversion unit is made of an organic material,
The second photoelectric conversion unit, an imaging apparatus according to any one of claims 9 consisting claim 1 with an inorganic material. The first photoelectric conversion element includes a third photoelectric conversion unit that converts light into electric charge,
  The imaging device according to claim 10, wherein the third photoelectric conversion unit has a spectral characteristic different from that of the first photoelectric conversion unit. The first photoelectric conversion element includes a third photoelectric conversion unit that converts light into electric charge,
  The imaging device according to claim 10, wherein the third photoelectric conversion unit is made of an organic material different from that of the first photoelectric conversion unit. A first photoelectric conversion element having a first photoelectric conversion unit that converts light into electric charge;
A wiring that is electrically connected to the first photoelectric conversion element and forms at least a part of an opening through which the light transmitted through the first photoelectric conversion unit passes;
A second photoelectric conversion element having a second photoelectric conversion unit that converts light that has passed through the opening into an electric charge ;
The first photoelectric conversion element and the second photoelectric conversion element have a low sensitivity of the first photoelectric conversion element and the second photoelectric conversion element when the luminance difference of the subject is equal to or greater than a predetermined value. Imaging in which the charge accumulation time in the conversion element is controlled so as to be shorter than the charge accumulation time in the highly sensitive photoelectric conversion element among the first photoelectric conversion element and the second photoelectric conversion element. element. The imaging device according to claim 13 , wherein the second photoelectric conversion element is electrically connected to the first photoelectric conversion element through the wiring. A first signal line from which a first signal generated by the charge converted by the first photoelectric conversion unit is output;
A second signal line different from the first signal line from which a second signal generated by the charge converted by the second photoelectric conversion unit is output;
The image sensor according to claim 13 or claim 14 , further comprising: A first selection transistor for outputting the first signal to the first signal line;
A second selection transistor different from the first selection transistor for outputting the second signal to the second signal line;
The imaging device according to claim 15 . A first amplification transistor connected to the first selection transistor;
A second amplification transistor different from the first amplification transistor connected to the second selection transistor;
The imaging device according to claim 16 . A first reset transistor connected to a first gate of the first amplifying transistor and setting the first gate to a predetermined voltage;
A second reset transistor connected to the second gate of the second amplification transistor and different from the first reset transistor for setting the second gate to a predetermined voltage;
An image sensor according to claim 17 . The first photoelectric conversion unit is made of an organic material,
The image sensor according to any one of claims 13 to 18 , wherein the second photoelectric conversion unit is made of an inorganic material. The first photoelectric conversion element includes a third photoelectric conversion unit that converts light into electric charge,
  The imaging device according to claim 19, wherein the third photoelectric conversion unit has a spectral characteristic different from that of the first photoelectric conversion unit. The first photoelectric conversion element includes a third photoelectric conversion unit that converts light into electric charge,
  The imaging device according to claim 19, wherein the third photoelectric conversion unit is made of an organic material different from that of the first photoelectric conversion unit. An imaging device comprising the imaging device according to any one of claims 13 to 21 . And a generation unit configured to generate image data using a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. 22. The imaging device according to 22 .

Images