JP6578297B2 - Improved heat treatment chamber - Google Patents

Description

  An apparatus for semiconductor processing is disclosed herein. Specifically, embodiments disclosed herein relate to an apparatus for heating a substrate in a deposition process.

  In the manufacture of integrated circuits, deposition processes such as chemical vapor deposition (CVD) processes or epitaxy processes are used to deposit films of various materials on a semiconductor substrate. Epitaxy is a process widely used in semiconductor processing to form a very thin material layer on a semiconductor substrate. These layers often define some of the minimum features of a semiconductor device and can have a high quality crystalline structure when the electrical properties of the crystalline material are required. A deposition precursor is typically supplied to the processing chamber in which the substrate is placed, and the substrate is heated to a temperature that is advantageous for the growth of a material layer having the desired properties.

  It is usually required that the layer has a very uniform thickness, composition and structure. Due to variations in local substrate temperature, gas flow, and precursor concentration, it is quite difficult to form a layer with uniform and reproducible properties. Typically, the processing chamber is a container that can maintain a high vacuum, typically less than 10 Torr, and a heat lamp placed outside the container to avoid introducing heat into the contaminant. Usually supplied by a non-collimated source such as. Control of the substrate temperature, and hence control of the local layer formation conditions, includes highly diffusive thermal energy from the heating lamp, heat absorption and release of chamber components, and sensors for layer formation conditions in the processing chamber. The exposure of the chamber surface makes it difficult. There remains a need for a deposition chamber with improved temperature control.

  Embodiments described herein are arranged between a first dome and a second dome in a vacuum chamber comprising a first dome and a second dome facing the first dome. A substrate processing apparatus is provided that includes a substrate support and a collimated energy source arranged in a compartmented housing and disposed proximate to the second dome, wherein the second dome is collimated. Between the energy source and the substrate support. At least a portion of the second dome and the substrate support can be optically transparent to collimated energy from the collimated energy source.

  In one embodiment, a substrate processing apparatus is disclosed. The substrate processing apparatus includes a vacuum chamber including a first dome and a second dome, and a substrate support disposed between the first dome and the second dome in the vacuum chamber and facing the first dome. A substrate support configured to support a substrate having a deposition surface, and a collimated energy source in a compartmented housing disposed proximate to the second dome of the vacuum chamber. And at least a portion of the second dome and the substrate support are optically transparent to the collimated energy from the collimated energy source.

  In another embodiment, a substrate processing apparatus is disclosed. The substrate processing apparatus includes a vacuum chamber including a first dome and a second dome, and a substrate support disposed between the first dome and the second dome in the vacuum chamber and facing the first dome. A substrate support configured to support a substrate having a deposition surface, a collimated energy source in a compartmented housing disposed proximate to the second dome of the vacuum chamber, and a vacuum And a metal member disposed between the second dome of the chamber and the collimated energy source.

  In another embodiment, a substrate processing apparatus is disclosed. The substrate processing apparatus includes a vacuum chamber including a first dome and a second dome, and a substrate support disposed between the first dome and the second dome in the vacuum chamber and facing the first dome. A substrate support configured to support a substrate having a deposition surface; a collimated energy source in a compartmented housing disposed proximate to the second dome of the vacuum chamber; And a reflector disposed between the second energy source and the second dome.

  In order that the foregoing features of the invention may be more fully understood, a more detailed description of the invention, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the accompanying drawings. It is. It should be noted, however, that the accompanying drawings show only typical embodiments of the invention and therefore should not be considered as limiting the scope of the invention, and that the invention may allow other equally effective embodiments. I want.

FIG. 2 is a schematic cross-sectional view of a processing chamber according to various embodiments described herein. FIG. 2 is a schematic cross-sectional view of a processing chamber according to various embodiments described herein. FIG. 2 is a schematic cross-sectional view of a processing chamber according to various embodiments described herein. FIG. 2 is a schematic cross-sectional view of a processing chamber according to various embodiments described herein. FIG. 6 is a plan view of a metal plate disposed between a lower dome and a collimated energy source, according to one embodiment described herein. 1 is a schematic cross-sectional view of a portion of a processing chamber, according to one embodiment described herein. FIG. 1 is a schematic cross-sectional view of a portion of a processing chamber, according to one embodiment described herein. FIG. 2 is a schematic cross-sectional view of a portion of a processing chamber, according to various embodiments described herein. FIG. 2 is a schematic cross-sectional view of a portion of a processing chamber, according to various embodiments described herein. FIG. 2 is a schematic cross-sectional view of a portion of a processing chamber, according to various embodiments described herein. FIG. 2 is a side view of a refractor, according to one embodiment described herein. FIG.

  To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be advantageously used in other embodiments, even if not explicitly stated.

  A processing chamber capable of temperature control divided into areas of the substrate while performing the deposition process has a first dome, a side, and a second dome, all of which have a high vacuum. Made of material that can maintain shape when established in a container. A substrate is placed on the substrate support in the processing chamber and above the second dome. A collimated energy source can be disposed in a compartmented housing proximate to the second dome, and the second dome can be disposed between the collimated energy source and the substrate support. At least a portion of the second dome and the substrate support may be optically transparent or transparent to collimated energy from the collimated energy source.

  FIG. 1A is a schematic cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 can be used to process one or more substrates, including deposition of material on the deposition surface 116 of the substrate 108. The processing chamber 100 includes a collimated energy source 102 for heating the back side 104 of the substrate 108 disposed within the processing chamber 100, among other components. The collimated energy source 102 can be a plurality of lasers, such as a laser diode, a fiber laser, a fiber coupled laser, or a plurality of light emitting diodes (LEDs). An advantage of sending collimated energy to the substrate 108 is improved control of the radiation pattern even when the source 102 is not in proximity to the substrate 108. The collimated energy source 102 emits energy at a known divergence angle. The degree of divergence angle of the collimated energy source 102 may be less than about 15 degrees in full width at half maximum (FWHM). The radiation at a known divergence angle can be controlled using an optical system that efficiently sends the radiation to a selected region of a selected image plane, such as the substrate 108. The substrate support 107 can be a funnel-shaped substrate support that can support the edge ring 105. The edge ring 105 supports the substrate 108 from the edge of the substrate 108. A plurality of pins 110 can be disposed on the substrate support 107 and the edge ring 105 can be supported by the pins 110. In one embodiment, there are three pins 110. In one embodiment, there is no edge ring 105 and the substrate 108 is supported by a plurality of pins 110. The substrate support 107 can be made of a material that is optically transparent or transparent to the collimated energy from the collimated energy source 102, so that a plurality of laser beams from the collimated energy source 102 can be obtained. Collimated energy such as will heat the back side 104 of the substrate 108 without losing energy. The material of the substrate support 107 can depend on the collimated energy source 102. In one embodiment, the substrate support 107 is made of quartz that is optically transparent to the collimated energy from the collimated energy source 102. Optically transparent means that the material transmits most of the radiation and is only slightly reflected and / or absorbed. In one embodiment, the substrate support 107 includes optical features or optical elements that direct collimated energy toward the back side 104 of the substrate 108.

  The substrate support 107 is shown in the lifted processing position, but is lifted vertically by an actuator (not shown) to a loading position below the processing position so that the lift pin 109 contacts the ledge or protrusion 111. Then, the substrate 108 may be lifted from the substrate support 107 through the hole of the substrate support 107. Thereafter, a robot (not shown) can enter the processing chamber 100, engage the substrate 108, and remove the substrate 108 through the loading port 103. Thereafter, the substrate support 107 is actuated to the processing position, and the substrate 108 can be placed on the pins 110 with the device side 116 facing away from the back side 104.

  The substrate support 107 is disposed in the processing chamber 100 between the first dome 128 and the second dome 114. A substrate 108 (not to scale) can be brought into the processing chamber 100 and placed on the substrate support 107 through the loading port 103. While in the processing position, the substrate support 107 divides the internal volume of the processing chamber 100 into a process gas region 156 (above the substrate) and a purge gas region 158 (below the substrate support 107). The substrate support 107 is rotated by the central shaft 132 during processing to minimize the effects of spatial anomalies of heat and process gas flow within the processing chamber 100 and thus facilitate uniform processing of the substrate 108. May be. The substrate support 107 is supported by a central shaft 132 that moves the substrate 108 in the axial direction 134 during loading and unloading, and possibly during processing of the substrate 108. In general, the substrate support 107 is formed from a material having a low thermal mass or a low heat capacity so that the energy absorbed and released by the substrate support 107 is minimized.

  In general, the first dome 128 and the second dome 114 are formed from an optically transparent material such as quartz. The first dome 128 and the second dome 114 are thin to minimize thermal storage and typically have a thickness between about 3 mm and about 10 mm, for example about 4 mm. The first dome 128 is thermally activated by introducing a thermal control fluid, such as cooling gas, through the inlet 126 into the thermal control space 136 and collecting the thermal control fluid through the outlet 130. Can be controlled. In some embodiments, the cooling fluid circulating through the thermal control space 136 may reduce deposition on the inner surface of the first dome 128. If the second dome 114 is made of thin quartz, it may have a conical shape to withstand the vacuum conditions inside the processing chamber 100. In one embodiment, the entire second dome 114 is made of quartz that is optically transparent to the collimated energy from the collimated energy source 102.

  A reflector 122 may optionally be placed outside the first dome 128 to reflect the radiation emitted from the substrate 108 back onto the substrate 108. By containing heat that may otherwise have leaked from the processing chamber 100 due to the reflection of radiation, the efficiency of heating will be improved. The reflector 122 can be made of a metal such as aluminum or stainless steel. The reflector 122 may have a machining channel that carries a flow of fluid, such as water, to cool the reflector 122. If necessary, the efficiency of reflection can be improved by coating the reflector region with a very well reflective coating such as gold.

  A collimated energy source 102, such as an array of lasers, is disposed in a predetermined manner around the central shaft 132 below the second dome 114 to heat the substrate 108 as the process gas passes over the substrate 108. Thus, the deposition of material on the deposition surface 116 of the substrate 108 can be facilitated. In various examples, the material deposited on the substrate 108 can be a Group III, Group IV, and / or Group V material, or a material that includes a Group III, Group IV, and / or Group V dopant. possible. For example, the deposited material can include silicon, germanium, gallium arsenide, indium gallium arsenide, gallium nitride, indium gallium nitride, aluminum gallium nitride, or other compound semiconductors or semiconductor alloys. The collimated energy source 102 generates collimated radiation, which helps create a plurality of spatially small control zones on the substrate 108. As a result, better temperature control of the substrate 108 is achieved.

  The collimated energy source 102 can be adapted to heat the substrate 108 to a temperature in the range of about 200 degrees Celsius to about 1400 degrees Celsius, such as in the range of about 300 degrees Celsius to about 1350 degrees Celsius. Each energy emitter of collimated energy source 102 is connected to a distribution board (not shown) through which power is supplied to each emitter. An emitter, which may be a laser, is disposed within the compartmented housing 145, which is cooled during or after processing, for example, by a cooling fluid introduced into a channel 149 disposed between the emitters. May or may not be done. Each emitter may be placed inside a fiber or tube 143. The emitter can be a laser diode, a fiber laser, or a fiber coupled laser. In general, each emitter is supported at the center of the tube 143 for uniform illumination. In one embodiment, each emitter may be placed at the bottom of tube 143, for example, inserted through an opening in the bottom of tube 143, secured to the bottom of tube 143, or placed at the bottom of tube 143. In other embodiments, each emitter may be supported above the bottom of the tube 143 by a support (not shown), which may be a pin or protrusion. The support may include a conduit that supplies power to an emitter disposed on the support. In one embodiment, the fiber laser may be positioned within the tube such that the emission end of the fiber laser is positioned near the center of the storage tube spaced from the bottom of the storage tube.

  A plurality of thermal radiation sensors 140, which may be pyrometers, may be disposed within the housing 145 to measure the heat release of the substrate. In general, the sensors 140 are placed at various locations within the housing to facilitate viewing various locations on the substrate 108 during processing. Sensing thermal radiation from various locations on the substrate 108 compares the thermal energy content, such as temperature, at various locations on the substrate 108 to determine whether temperature anomalies or inhomogeneities exist. ,make it easier. Such non-uniformities can lead to non-uniformities in film formation such as thickness and composition. At least two sensors 140 are commonly used, but more than two sensors may be used. Various embodiments may use three, four, five, six, seven, or more sensors 140.

  Since the collimated energy source 102 generally produces monochromatic light, the sensor 140 can be tuned to a wavelength that is different from the wavelength of the monochromatic light of the collimated energy source 102, thus achieving a more accurate temperature reading. Can be done. For a broad spectrum energy source, such as a heating lamp, the radiation from the energy source is not monochromatic and can affect the temperature reading of the sensor 140.

  If necessary, a thermal sensor 118 may be disposed on the reflector 122 to monitor the thermal state of the first dome 128 or to monitor the thermal state of the substrate 108 from a location opposite to the location of the sensor 140. Good. Such monitoring can help compare data received from sensor 140 to determine, for example, whether there is an error in the data received from sensor 140. The thermal sensor 118 may in some cases be a sensor assembly comprising more than one individual sensor. Accordingly, the processing chamber 100 receives one or more sensors arranged to receive radiation emitted from the first side of the substrate and radiation from the second side of the substrate opposite the first side. One or more sensors may be provided.

  Controller 160 receives data from sensor 140 and separately adjusts the power delivered to each emitter, or individual group of emitters, of collimated energy source 102 based on the data. The controller 160 may include a power source 162 that independently powers the various emitters. The controller 160 can be set to a desired temperature profile, and based on the comparison of data received from the sensor 140, the controller 160 adjusts the power to the emitter and the observed thermal data to the desired temperature profile. Match. The controller 160 may also adjust the power to the emitter to match the heat treatment of one substrate with the heat treatment of another substrate when the chamber performance varies with time.

  A metal member 150 may be disposed between the second dome 114 and the collimated energy source 102. The metal member 150 can include a cooling channel 152 that controls the temperature of the second dome 114. Since some process gas may be present in the purge gas region 158, deposition may occur on the second dome 114 if the temperature of the second dome 114 is too cold or too hot. In addition, the heated substrate 108 may heat the second dome 114, and the heated second dome 114 may take longer to cool than the substrate 108. May then increase the cooling time of the substrate 108. Accordingly, the second dome 114 can be advantageously cooled by the metal member 150 to reduce the cooling time of the substrate 108. As shown in FIG. 1A, the metal member 150 may be conformal with the conical shape of the second dome 114 to provide efficient thermal coupling of the metal member 150 with the second dome 114. . As shown in FIG. 1A, a collimated energy source 102 such as a plurality of laser diodes may form a plane that is generally conformal with member 150. Alternatively, the collimated energy source 102 may form a plane that is substantially parallel to the deposition surface 116 of the substrate 108. Optionally, the second dome 114 can be cooled by flowing a coolant fluid between the second dome 114 and the metal member 150 or housing 145.

  FIG. 1B is a schematic cross-sectional view of a processing chamber 100 according to one embodiment described herein. Instead of the funnel-shaped substrate support 107, the processing chamber 100 includes a substrate support 164 having a plurality of spokes 166. Pins 110 are supported by spokes 166 that support the substrate 108 directly or through the edge ring 105. The spokes 166 can be made of an optically transparent material such as quartz. In operation, the spokes 166 may be rotating so that a shadow can be formed on the back side of the substrate 108. To minimize the shadowing effect, a collimated energy source 102, such as a plurality of lasers, irradiates any region P on the back side 104 of the substrate 108 with at least two laser beams, such as beams L1 and L2. As can be arranged. In one embodiment, each region P on the back side 104 of the substrate 108 is illuminated by ten laser beams.

  FIG. 1C is a schematic cross-sectional view of the processing chamber 100 according to one embodiment described herein. The processing chamber 100 includes a substrate support 168 having a funnel-shaped portion 170 and a plurality of spokes 172 extending radially outward from the funnel-shaped portion 170. Funnel-shaped portion 170 and spokes 172 may be made of an optically transparent material such as quartz. In operation, all laser beams may pass through the optically transparent funnel-shaped portion 170, with rotating spokes 172 on the back side of the substrate 108, shown as L3 and L4 in FIG. 1C. The beam may be sent to the back side 104 of the substrate 108 at an angle that does not cast a shadow on the 104.

  FIG. 1D is a schematic cross-sectional view of the processing chamber 100 according to one embodiment described herein. The processing chamber 100 includes a substrate support 174 that is coupled to the disk 106. The substrate support 174 can include a plurality of brackets 176. In one embodiment, three brackets 176 support the edge ring 105. In this configuration, the substrate 108 may be removed from the processing chamber 100 through the loading port 103 or brought into the processing chamber 100 by a robot (not shown). The robot may be able to generate a force such as Bernoulli force or gas buoyancy, for example, to lift the substrate 108 from the edge ring 105 without contacting the substrate 108. The disk 106 is connected to a shaft 113 that extends through the first dome 128 and the reflector 122. The shaft 113 may be able to rotate or move vertically by a permanent magnet 115 and an electromagnet 117. In operation, the electromagnet 117 is magnetically coupled to the permanent magnet 115 to move the permanent magnet 115. The electromagnet 117 is controlled by a drive controller 119 that is set to generate and control a magnetic field in the electromagnet 117. The magnetic field of the electromagnet 117 interacts with the permanent magnet 115, moving the permanent magnet 115 vertically and / or rotating the permanent magnet 115, which in turn moves the edge ring 105 and the substrate 108 vertically and / Or rotate.

  FIG. 2 is a plan view of a metal member 150 according to one embodiment. The member 150 may have the same shape as the substrate 108, such as a circle, as shown in FIG. Member 150 may be made of a metal such as copper, aluminum or stainless steel. An opening 201 may be formed in the center of the member 150 so that the central shaft 132 passes. A plurality of apertures 202 may be formed in the member 150, each aperture 202 being aligned with a laser or other emitter. For example, an optical component 204 such as a diffractive, refractive and / or reflective element such as a lens, diffuser, shaper, tractor, and / or homogenizer can shape, concentrate, or diffuse energy to provide uniform heating of the substrate 108. To achieve, each aperture 202 can be formed inside. In one embodiment, a collimated energy source 102 is disposed inside the aperture 202. In other embodiments, the optical component 204 can be incorporated into the substrate support 107.

  FIG. 3 is a cross-sectional view of a portion of the processing chamber 100. As shown in FIG. 3, a metal member 302 is disposed between the second dome 114 and the collimated energy source 102. The metal member 302 may be the same as the metal member 150 except that it is flat rather than conical. The metal member 302 includes a cooling channel 304 for flowing a coolant to control the temperature of the second dome 114. Metal member 302 also includes a plurality of apertures through which the laser beam passes, and one or more optical components may be disposed within each aperture.

  FIG. 4 is a cross-sectional view of a portion of the processing chamber 100 according to one embodiment. As shown in FIG. 4, a substantially flat dome 402 is disposed between the substrate support 107 and the collimated energy source 102. The flat dome 402 can be made of a metal such as aluminum so that it can withstand the vacuum conditions within the processing chamber 100. A liner (not shown) may be placed on the flat dome 402 to protect the metal dome 402 from chemical erosion. The flat dome 402 may have a plurality of holes disposed therein for passing the laser beam. An optically transparent material such as quartz can be placed inside the hole to maintain a vacuum and allow the laser beam to pass. Accordingly, at least a portion of the flat dome 402 is optically transparent to the collimated energy of the collimated energy source 102. The collimated energy source 102 may form a plane that is substantially parallel to the flat dome 402.

  FIG. 5A is a schematic cross-sectional view of a portion of a processing chamber 100, according to one embodiment described herein. A reflector 502 can be placed over the collimated energy source 102. The reflector 502 can be disposed between the collimated energy source 102 and the metal member 150 or between the metal member 150 and the second dome 114. The reflector 502 may include a plurality of cavities 504, each cavities 504 may be defined by a reflective surface 510 disposed in the tube 143 above the collimated energy source 102. An opening 506 may be formed in each reflective surface 510 for the collimated energy to pass through. A mirror 508 may be placed in the opening of the cavity 504 to reflect the collimated energy to the reflective surface 510 and then reflect the collimated energy toward the back side 104 of the substrate 108. The reflective surface 510 may be an arc, a curved portion, or a straight portion, and may have facets in both the length and width dimensions of the surface 510. The mirror 508 may be faceted, diffusive, or a combination thereof. The reflector 502 may be a plurality of concentric rings or a plurality of concentric polygons.

  FIG. 5B is a schematic cross-sectional view of a portion of the processing chamber 100, according to one embodiment described herein. A plurality of reflector rings 512 may be disposed on the collimated energy source 102. The reflector ring 512 may be disposed between the collimated energy source 102 and the metal member 150 or between the metal member 150 and the second dome 114. Each reflector ring 512 has a first reflecting surface 514 and a second reflecting surface 516. In operation, collimated energy, labeled “L5” in FIG. 5B, from the first reflective surface 514 of the first reflector ring 512 to the second reflector ring 512 adjacent to the first reflector ring 512. Reflected by the second reflective surface 516, the second reflective surface 516 reflects the collimated energy source toward the back side 104 of the substrate 108. Each reflector ring 512 may include a channel 518 through which the coolant passes.

  FIG. 5C is a schematic cross-sectional view of a portion of the processing chamber 100, according to one embodiment described herein. A collimated energy source 519 such as a plurality of laser diodes may be disposed on the surface 521 below the second dome 114. The front surface 521 can be substantially perpendicular to the back side 104 of the substrate 108. A plurality of reflector rings 520 may be disposed under the second dome 114. In one embodiment, both the collimated energy source 519 and the ring 520 are disposed under the metal member 150. Each reflector ring 520 may have a reflective surface 522 that reflects the collimated energy, labeled “L6” in FIG. 5C, from the collimated energy source 519 toward the back side 104 of the substrate 108. Each reflector ring 520 may include a channel 524 through which the coolant passes. A support 526 may be used to support each reflector ring 520, and the support 526 may be outside the collimated energy path from the collimated energy source 519. For example, support 526 may be placed between the optical paths of two collimated energy sources 519 so that collimated energy is not blocked by support 526.

  FIG. 6 is a side view of a refractor 600 according to one embodiment described herein. The refractor 600 can include a first surface 602, a second surface 608, a third surface 610 and a fourth surface 612. The first surface 602 may not be straight and includes one or more inclined surfaces 604, 606, which are the remaining surfaces 603, 605, 607 of the first surface 602 as well as the third surface 610. And inclined with respect to the fourth surface 612. The remaining surfaces 603, 605, 607 can be substantially parallel to the second surface 608, and the third surface 610 can be substantially parallel to the fourth surface 612. A plurality of refractors 600 may be disposed above the collimated energy source 102 and below the second dome 114 to control the direction of the collimated energy. The one or more inclined surfaces 604, 606 may be flat or rough. During operation, collimated energy may enter from surfaces 602 and / or 612, and the rough and / or flat surfaces 604, 606 cause energy to exit through surfaces 608 and / or 610. The tilt and roughness of the tilted surfaces 604, 606 can be varied to control the direction of collimated energy exiting the refractor 600. Other types of refractors, such as a holographic (diffractive) lens, a faceted lens, or a curved lens, can be used to control the direction of the collimated energy in order to control the collimated energy source 102 and the second dome 114. You may arrange | position between.

  In summary, a collimated energy source that produces monochromatic light is utilized in the deposition process. The collimated energy source produces collimated light, which creates a plurality of spatially small control zones on the substrate, which in turn provides better temperature control of the substrate. In addition, the collimated energy is monochromatic, which allows a more accurate temperature measurement.

While the above is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, the scope of the invention being defined by the following claims Determined by the range of

Claims (15)

A vacuum chamber comprising a first dome and a second dome;
A substrate support disposed between the first dome and the second dome in the vacuum chamber and facing the first dome;
A compartmentalized housing disposed proximate to the second dome of the vacuum chamber;
A collimated energy source in the compartmented housing, wherein at least a portion of the second dome and the substrate support are optically sensitive to collimated energy from the collimated energy source. A collimated energy source that is transparent,
A metal member including a plurality of apertures disposed between the second dome of the vacuum chamber and the collimated energy source to cool the second dome of the vacuum chamber , A metal member remote from the compartmented housing ;
A reflector for directing collimated energy from the collimated energy source through the plurality of apertures in the metal member;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 1, wherein the second dome has a conical shape.   The substrate processing apparatus according to claim 2, wherein the second dome and the substrate support are made of quartz.   The substrate processing apparatus of claim 1, wherein the collimated energy source comprises a plurality of lasers. A vacuum chamber comprising a first dome and a second dome;
A substrate support disposed between the first dome and the second dome in the vacuum chamber and facing the first dome, the substrate support having a substrate support surface ;
A collimated energy source disposed on a surface of the vacuum chamber below the second dome ;
A substrate comprising a metal member spaced from the surface disposed between the second dome of the vacuum chamber and the collimated energy source to cool the second dome of the vacuum chamber. Processing equipment.   The substrate processing apparatus according to claim 5, wherein the metal member is conformal with the second dome.   The substrate processing apparatus of claim 5, wherein the collimated energy source comprises a plurality of lasers.   The substrate processing apparatus according to claim 7, wherein the plurality of lasers includes a laser diode, a fiber laser, or a fiber coupled laser.   The substrate processing apparatus according to claim 5, wherein the metal member includes a plurality of holes. A vacuum chamber comprising a first dome and a second dome;
A substrate support disposed between the first dome and the second dome in the vacuum chamber and facing the first dome;
A compartmentalized housing disposed proximate to the second dome of the vacuum chamber;
A collimated energy source in the compartmented housing;
A reflector disposed between the compartmented housing and the second dome;
A metal member disposed between the reflector and the second dome for cooling the second dome of the vacuum chamber, the metal member being remote from the partitioned housing ; The substrate processing apparatus, wherein the reflector is disposed between the metal member and the collimated energy source.   The substrate processing apparatus according to claim 10, wherein the reflector includes a plurality of reflecting surfaces and a mirror disposed on each reflecting surface.   The substrate processing apparatus according to claim 10, wherein the reflector includes a plurality of reflector rings, and each ring includes two reflecting surfaces.   The substrate processing apparatus of claim 10, further comprising a plurality of refractors disposed between the collimated energy source and the second dome.   Each refractor of the plurality of refractors includes a first surface, a second surface, a third surface, and a fourth surface, wherein the first surface has one or more slopes. The substrate processing apparatus according to claim 13, comprising a processed surface.   The substrate processing apparatus of claim 10, wherein the substrate support is coupled to a shaft extending through the first dome.

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