JP6477365B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device using a semiconductor element.

2. Description of the Related Art A semiconductor device using a semiconductor element is known that has a cooling member that reduces heat generation of the semiconductor element (see Patent Document 1).
In this prior art, a metal plate having a coolant flow path is used as a cooling member, and a base is formed by being sandwiched between a pair of insulating substrates, and a semiconductor element is mounted on the insulating substrate.
In this prior art, the thermal expansion coefficients of the upper and lower surfaces of the base body can be balanced, thereby reducing the warpage of the metal plate serving as the cooling device and preventing the insulating substrate from cracking.

JP 2004-22973 A

In general, in a semiconductor device, a surge voltage is generated when a semiconductor element performs switching, which adversely affects contacts and circuits. For this reason, it is necessary to take another protective measure against a surge voltage such as a capacitor.
However, each of the semiconductor element and the electrode is provided independently on the cooling member, and a separate protection circuit is required to protect the surge voltage.
The present invention has been made paying attention to the above problem, and an object thereof is to provide a semiconductor device capable of reducing a surge voltage generated when a semiconductor element is switched.

The semiconductor device of the present invention includes a semiconductor element, a high-potential side terminal connected to the semiconductor element, a low-potential side terminal connected to the semiconductor element, and a cooling having a cooling function on the first surface and the second surface. A member.
Furthermore, the semiconductor device of the present invention includes a conductive member connected to the second surface, and the high potential side terminal portion and the low potential side terminal portion are selectively connected to the first surface and the conductive member, respectively. It is connected.

  In the semiconductor device of the present invention, the stray capacitance generated between the surface of the terminal portion in contact with the cooling member and the surface of the conductive member in contact with the cooling portion functions as a snubber capacitor, so that the semiconductor device can be switched. The generated surge voltage can be reduced.

FIG. 3 is a cross-sectional view showing the semiconductor device according to the first embodiment, and shows a cross section taken along the line S1-S1 in FIG. 1 is a side view showing a semiconductor device according to a first embodiment. 1 is a circuit diagram showing a power conversion device to which the semiconductor device of the first embodiment is applied. It is a side view which shows the semiconductor device of Embodiment 2 and Embodiment 6. FIG. 6 is a cross-sectional view showing a semiconductor device according to a third embodiment. FIG. 6 is a cross-sectional view showing a semiconductor device according to a fourth embodiment. FIG. 10 is a side view showing a semiconductor device according to a fifth embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS The best mode for realizing a semiconductor device of the present invention will be described below based on the embodiments shown in the drawings.
(Embodiment 1)
First, a configuration of a power conversion device to which the semiconductor device A (see FIGS. 1 and 2) according to the first embodiment is applied will be described.
This power converter is used, for example, as an inverter of a drive system that drives the rotating electrical machine M shown in FIG.

  The rotating electrical machine M is a three-phase AC motor, and is used as a drive source for the electric vehicle. The drive shaft of the rotating electrical machine M is connected to the axle of the electric vehicle (not shown) so that the driving force can be transmitted. Note that the electric vehicle includes a hybrid vehicle including an engine as a drive source in addition to an electric vehicle using only the rotating electrical machine M as a drive source.

  The power converter is interposed between the DC power supply 10 and the rotating electrical machine M, converts the DC power supplied from the DC power supply 10 into three-phase AC power, and supplies it to the rotating electrical machine M. The number of alternating current phases by the power converter is not limited to three phases.

The power conversion device has a known structure and includes a power module PM and a smoothing capacitor 30.
The power module PM includes semiconductor elements 21 to 23 that perform switching on the upper arm side and semiconductor elements 24 to 26 that perform switching on the lower arm side. Each of the semiconductor elements 21 to 26 opens and closes each of the semiconductor elements 21 to 26 by a signal obtained from the control circuit 40 via the wiring 28, and the three-phase AC power for obtaining a desired rotational force in the rotating electrical machine M. Is generated.
The smoothing capacitor 30 is connected to the high-potential-side power supply bus 11 and the low-potential-side power supply bus 12 that connect the DC power supply 10 and the power module PM, and suppresses fluctuations in voltage due to the switching operation.

FIG. 1 is a cross-sectional view of a semiconductor device A including a semiconductor element 20 that is one of the semiconductor elements 21 to 26 (a cross section taken along the line S1-S1 in FIG. 2). FIG.
As shown in FIG. 1, the semiconductor element 20 is disposed on the high potential side terminal portion 50 by joining the first surface 20 a, which is one of the front and back surfaces, to the high potential side terminal portion 50. The high potential side terminal portion 50 is connected to the high potential side power supply bus 11 outside the figure. The semiconductor element 20 and the high potential side terminal portion 50 are metal-bonded using solder or the like. Note that this bonding is not limited to metal bonding, and may be simply bonding by contact or bonding using a conductive adhesive.

The second surface 20 b opposite to the first surface 20 a of the semiconductor element 20 is connected to the low potential side terminal portion 60. The low potential side terminal portion 60 is connected to the low potential side power supply bus 12 outside the figure.
The semiconductor element 20 and the low potential side terminal portion 60 are connected by metal bonding using solder or the like. Moreover, this joining is not limited to metal joining, but may be a connection using a wiring column material such as a bus bar or a bonding wire.

The high potential side terminal portion 50 is joined to the cooling member 70.
The cooling member 70 is made of metal such as aluminum, and has a main surface 71 (first surface) having the largest area among the outer surfaces, and an opposite main surface 72 (second surface) which is a surface opposite to the main surface 71. Surface).
Furthermore, the cooling member 70 has a plurality of cooling paths 73 for circulating a cooling medium (cooling water, cooling oil, cooling air, etc.) therein.

A plurality of thin cooling fins 74 are stacked on the outer periphery of the cooling path 73 with an interval therebetween. Therefore, the main surface 71 and the opposite main surface 72 are formed by the tip surfaces of the cooling fins 74.
In addition, as a structure provided with such a plurality of cooling fins 74, one manufactured by a metal extrusion process called a multi-hole tube (microchannel) or one manufactured by brazing called a corrugated fin There is.

In addition, an insulating member 75 is interposed between the high potential side terminal portion 50 and the main surface 71 of the cooling member 70. As this insulating member 75, for example, ceramics (silicon nitride, alumina) or the like can be used.
The high potential side terminal portion 50 and the insulating member 75 are metal-bonded by solder or the like, and similarly, the main surface 71 of the insulating member 75 and the cooling member 70 is also metal-bonded.

  Further, a conductive member 80 is connected to the low potential side terminal portion 60. The conductive member 80 is obtained by extending and processing a part of a connection member such as a bus bar used to connect the low potential side terminal portion 60 to the power supply bus 12.

  The conductive member 80 extends from the connection portion with the low potential side terminal portion 60 to the position of the opposite main surface 72 along the high potential side terminal portion 50 and the cooling member 70 in an L-shaped cross section. An extension 81 is provided that is bent in an L shape along the surface 72.

The extension 81 is connected to the opposite main surface 72 via the insulating member 76 similar to the insulating member 75 between the opposite main surface 72 of the cooling member 70.
In the connection between the extension portion 81 and the opposite main surface 72, the surface 81a of the extension portion 81 facing the opposite main surface 72 and the insulating member 76 are metal-bonded by solder or the like, and the insulating member 76 and the opposite main surface are connected. 72 is connected by metal bonding with solder or the like.

(Operation of Embodiment 1)
Next, the operation of the first embodiment will be described.
When the rotating electrical machine M is driven, the semiconductor element 20 is switched, and at this time, the cooling medium is circulated through the cooling path 73 of the cooling member 70.
The cooling member 70 exchanges heat with the high potential side terminal portion 50 and the conductive member 80 and dissipates heat on the main surface 71 and the opposite main surface 72 having the largest surface area among the outer surfaces. Heat exchange with the cooling medium.
Therefore, the cooling member 70 can efficiently cool the high-potential side terminal portion 50 and the semiconductor element 20 that are heat generating portions.

  In the semiconductor device A, a surge voltage is generated when the semiconductor element 20 is switched. At this time, in the semiconductor device A, the surface 51 on the cooling member 70 side of the high potential side terminal portion 50 connected to the main surface 71 of the cooling member 70 and the conductive member 80 connected to the opposite main surface 72 of the cooling member 70. The stray capacitances C2 and C3 generated between the surface 81a of the extension portion 81 function as a snubber capacitor.

That is, the stray capacitance C2 exists between the surface 51 of the high potential side terminal portion 50 and the cooling member 70, and between the surface 81a of the extension portion 81 of the conductive member 80 and the cooling member 70. There is a stray capacitance C3.
Since these stray capacitances C2 and C3 and the resistance R1 of the cooling member 70 exist in parallel to the semiconductor element 20, they are in parallel with the semiconductor element 20 as shown in FIG. It functions as 100.
Thereby, the surge voltage generated at the time of switching of the semiconductor device A can be reduced.

Furthermore, since the insulating member 75 is interposed between the surface 51 of the high potential side terminal portion 50 and the main surface 71 of the cooling member 70, the insulating member 75 acts as a derivative, and the insulating member 75. The stray capacitance C3 can be made larger than that without intervening.
Similarly, since the insulating member 76 is interposed between the surface 81a of the extension 81 of the conductive member 80 and the opposite main surface 72 of the cooling member 70, the insulating member 76 acts as a derivative, The stray capacitance C3 can be made larger than that without the insulating member 76 interposed.
Therefore, the surge voltage reducing effect by the snubber circuit 100 can be further enhanced as compared with the case where the both insulating members 75 and 76 are not provided.

Further, the high potential side terminal portion 50 and the extension portion 81 are joined to the main surface 71 and the opposite main surface 72 of the cooling member 70 via insulating members 75 and 76, respectively.
Therefore, the thermal expansion of the main surface 71 and the opposite main surface 72 during driving of the semiconductor device A is compared with that in which the component is bonded to only one of the main surface 71 and the opposite main surface 72 of the cooling member 70. -The difference of shrinkage can be made small and the curvature of the cooling member 70 can be reduced.
In addition, since the insulating members 75 and 76 of the same material are joined to the main surface 71 and the opposite main surface 72 of the cooling member 70, the high-potential side terminal portion 50 and the conductive member 80 are disposed on both surfaces. Compared with what is directly joined to 71 and 72, the thermal expansion and contraction difference of both surfaces 71 and 72 can be suppressed. Moreover, since the insulating members 75 and 76 are metal-bonded to the both surfaces 71 and 72, respectively, the thermal expansion and contraction difference between the both surfaces 71 and 72 can be further suppressed.

(Effect of Embodiment 1)
The effects of the semiconductor device of the first embodiment are listed below.
1) The semiconductor device of the first embodiment is
A semiconductor element 20;
A high potential side terminal portion 50 connected to the semiconductor element 20;
A low potential side terminal portion 60 connected to the semiconductor element 20;
A cooling member 70 having a cooling function on at least the main surface 71 as the first surface and the opposite main surface 72 as the second surface which are the front and back of the outer surface;
A semiconductor device comprising:
A conductive member 80 connected to the opposite main surface 72;
The high potential side terminal portion 50 and the low potential side terminal portion 60 are selectively connected to the main surface 71 and the conductive member 80, respectively.
Therefore, the stray capacitance generated between one of the terminal portions 50 and 60 (the high potential side terminal portion 50) connected to the cooling member 70 and the conductive member 80 connected to the cooling member 70 is the semiconductor element 20. Acts as a snubber capacitor in parallel. Thereby, the surge voltage generated at the time of switching of the semiconductor element 20 can be reduced.
In particular, in the first embodiment, the conductive member 80 is formed by extending a part of an existing bus bar that connects the low-potential side terminal portion 60 to the low-potential-side power supply bus 12. Is not necessary and is advantageous in terms of cost.
That is, in the first embodiment, the conductive member 80 is formed of a connection member that connects either the high potential side terminal portion 50 or the low potential side terminal portion 60 connected thereto and the DC power supply 10 side. It is characterized by.

2) The semiconductor device of the first embodiment is
The cooling member 70 is made of a conductive material,
An insulating member 75 is interposed between the main surface 71 of the cooling member 70 and the high-potential side terminal portion 50 connected thereto,
An insulating member 76 is interposed between the opposite main surface 72 of the cooling member 70 and the conductive member 80 connected thereto.
Therefore, the insulating members 75 and 76 act as dielectrics to increase the stray capacitance value, and the resistance R1 which is the resistance component of the cooling member 70 acts as a snubber resistance, so that a surge generated during switching of the semiconductor device A is generated. The voltage can be further reduced.

3) The semiconductor device of the first embodiment is
The insulating members 75 and 76 and the main surface 71 and the opposite main surface 72 of the cooling member 70 are metal-bonded.
In this way, since the insulating members 75 and 76 are metal-bonded to the main surface 71 and the opposite main surface 72 of the cooling member 70, the difference in thermal expansion and thermal contraction between the main surface 71 and the opposite main surface 72 is reduced. It can suppress and the curvature of the cooling member 70 can be reduced.

4) The semiconductor device of the first embodiment is
A cooling path 73 that is a flow path of the cooling medium is provided inside the cooling member 70,
The main surface 71 and the opposite main surface 72 of the cooling member 70 are formed by cooling fins 74.
Therefore, the heat dissipation performance of the cooling member 70 can be improved.
In addition, when the main surface 71 and the opposite main surface 72 are bonded to the insulating members 75 and 76, a stable metal bonding can be obtained as compared with a case where the flat surfaces are simply metal-bonded with solder, and the contact area is obtained. Can be made uniform. As a result, the capacitance of the snubber capacitor can be stabilized, and the difference in thermal expansion can be suppressed to further suppress the warpage of the cooling member 70.

(Other embodiments)
Next, semiconductor devices according to other embodiments will be described.
Since the other embodiment is a modification of the first embodiment, the same reference numerals as those in the first embodiment are assigned to the same components as those in the first embodiment, and the description thereof is omitted. Only the differences will be described.

(Embodiment 2)
The second embodiment is a modification of the first embodiment and is an example in which the insulating members 75 and 76 shown in the first embodiment are omitted.
That is, as shown in FIG. 4, the high potential side terminal portion 50 is directly joined to the main surface 71 of the cooling member 270. Moreover, this joining is metal joining by solder etc.

Further, the surface 81 a of the extension 81 of the conductive member 80 is directly joined to the opposite main surface 72 of the cooling member 270. This joining is also a metal joining using solder or the like.
In addition, although the cooling member 270 has illustrated the example which does not provide the cooling path 73, you may provide the cooling path 73 similarly to Embodiment 1. FIG.

Even in the second embodiment, as described in the above 1), the floating generated between the high potential side terminal portion 50 connected to the cooling member 270 and the conductive member 80 connected to the cooling member 70. A snubber circuit 200 in which the capacitance C1 acts as a snubber capacitor is obtained. Thereby, the surge voltage generated at the time of switching of the semiconductor device A can be reduced similarly to the above 1).
In the second embodiment, since the insulating members 75 and 76 are not provided, the resistance value of the cooling member 270 that acts as the resistance of the snubber circuit is lower than that in the first embodiment.

(Effect of Embodiment 2)
2-1) The semiconductor device of the second embodiment is
The main surface 71 of the cooling member 270 and the high potential side terminal portion 50 connected thereto are metal-bonded,
The opposite main surface 72 of the cooling member 270 and the conductive member 80 are metal-bonded.
Therefore, the snubber circuit 200 in which the stray capacitance C1 generated between the high potential side terminal portion 50 connected to the cooling member 270 and the conductive member 80 connected to the cooling member 70 acts as a snubber capacitor is obtained. Thereby, the surge voltage generated at the time of switching of the semiconductor element 20 can be reduced.

(Embodiment 3)
The third embodiment is a modification of the first embodiment, and is an example in which the shape of the conductive member 380 is different from that of the first embodiment as shown in FIG.
That is, in the third embodiment, the difference between the stress generated in the high potential side terminal portion 50 and the stress generated in the conductive member 380 is suppressed based on the thickness of the conductive member 380 and the contact area with the cooling member 70. I am doing so.

  FIG. 5 is a cross-sectional view showing the semiconductor device of the third embodiment. In the conductive member 380, the thickness of the extension 381 connected to the opposite main surface 72 of the cooling member 70 via the insulating member 76 is implemented. It is formed thicker than the extension portion 81 in the first embodiment.

That is, in the third embodiment, the conductive member 380 is made of a material whose thermal expansion coefficient is smaller than the thermal expansion coefficient of the high potential side terminal portion 50. For example, a case where copper-based metal is used for the high potential side terminal portion 50 and nickel-based steel is used for the conductive member 380 is used.
Therefore, the plate thickness of the conductive member 380 is formed to be thicker than the plate thickness of the high potential side terminal portion 50.

Next, the operation of the third embodiment will be described.
When the high-potential side terminal portion 50 and the extended portion 381 of the conductive member 380 are affected by the same thermal effect during driving of the semiconductor device, the thickness on the side having the smaller thermal expansion coefficient is increased. Thus, the stress difference generated between the two can be suppressed.
Thereby, equalization of the force which acts on the main surface 71 and the opposite main surface 72 of the cooling member 70 can be aimed at, and generation | occurrence | production of curvature can be suppressed.

(Effect of Embodiment 3)
3-1) The semiconductor device of Embodiment 3 is
The thickness dimension value of the high potential side terminal portion 50 connected to the main surface 71 and the extension portion 381 of the conductive member 380 connected to the opposite main surface 72, and the contact area value between the surfaces 71 and 72, small at least one, in response to the thermal expansion coefficient of the extension portion 381 of the high potential side terminal portion 50 and the conductive member 380, the values of the direction coefficient of thermal expansion is large, than the smaller value of coefficient of thermal expansion It is set to a value.
Therefore, the stress difference between the high-potential side terminal portion 50 joined to the both surfaces 71 and 72 of the cooling member 70 and the extension portion 381 is suppressed, and the difference in thermal expansion between the both surfaces 71 and 72 of the cooling member 70 is suppressed, thereby reducing the cooling member 70. Warpage can be suppressed.
Furthermore, in the third embodiment, the above-described shape (thickness) is set by the extended portion 381 of the conductive member 380. Since the extended portion 381 is not a portion that substantially supplies power, the shape and contact area can be set more freely than the high potential side terminal portion 50 that supplies power.

  In Embodiment 3, the example in which the thickness of the extension portion 381 having a relatively low thermal expansion coefficient is made thicker than the thickness of the high potential side terminal portion 50 having a relatively high thermal expansion coefficient is shown. In this case, the joint area between the extension 381 and the opposite main surface 72 of the cooling member 70 may be increased. Or both may be sufficient.

  Further, when the high potential side terminal portion 50 and the extension portion 381 have a low coefficient of thermal expansion, the thickness of the extension portion 381 is set to the high potential as in the first embodiment of FIG. You may form thinner than the thickness of the side terminal part 50. FIG. Alternatively, in this case, the bonding area between the high potential side terminal portion 50 and the cooling member 70 may be wide. The relationship between the thermal expansion coefficients as described above may be, for example, a case where copper is used for the high potential side terminal portion 50 and aluminum is used for the extension portion 381.

(Embodiment 4)
The fourth embodiment is a modification of the first embodiment, and is an example in which a resistor 400 is interposed between the extension 81 of the conductive member 80 and the insulating member 76 as shown in FIG. is there.
As this resistor, a metal or a conductive resin having a higher resistance value than the cooling member 70 and the conductive member 80 is used.

  Thereby, when the snubber circuit 401 shown in FIG. 6 is formed, the resistor 400 acts as the snubber resistor R2, so that the surge voltage generated during the switching operation of the semiconductor device can be further reduced.

(Effect of Embodiment 4)
4-1) The semiconductor device of the fourth embodiment is
The conductive member 80 and the opposite main surface 72 of the cooling member 70 are in contact with each other through a resistor 400 serving as a resistance region.
Therefore, since the resistor 400 acts as the snubber resistor R2, the surge voltage generated during the switching operation of the semiconductor device can be further reduced.

(Embodiment 5)
The fifth embodiment is a modification of the first embodiment. As shown in FIG. 7, the cooling member 570 includes two sets of semiconductor elements 521, 522, high potential side terminal portions 551, 552, and low potential side terminals. In this example, portions 561 and 562 and conductive members 581 and 582 are provided.

  That is, the high potential side terminal portions 551 and 552 are independently joined to the main surface 571 of the cooling member 570. In this case, an insulating member may be interposed as in the first embodiment, or may be directly joined as in the second embodiment. In addition, it is desirable that this bonding is a metal bonding with respect to the cooling member 570.

The semiconductor elements 521 and 522 are bonded to the high potential side terminal portions 551 and 552, respectively. This joining is also preferably a metal joining.
Further, in the semiconductor elements 521 and 522, low potential side terminal portions 561 and 562 are joined to surfaces opposite to the joint surfaces of the high potential side terminal portions 551 and 552, respectively. In addition, the conductive members 581 and 582 connected to the low potential side terminal portions 561 and 562 are the opposite main members not shown in FIG. 7 of the cooling member 570 in the same manner as in the first or second embodiment. It is joined to the surface directly or via an insulating member.

  Therefore, in the semiconductor device of the fifth embodiment, in addition to the effect of 1), a plurality of semiconductor devices that form a snubber capacitor by stray capacitance can be installed compactly.

  Further, in the fifth embodiment, the high potential side terminal portions 551 and 552 and the conductive members 581 and 582 are brought into contact with the cooling fins 74 forming the main surface 571 and the opposite main surface (not shown), respectively. Yes. Therefore, it is possible to make the resistance component uniform by making the contact areas of the high-potential side terminal portions 551 and 552 and the conductive members 581 and 582 the main surface 571 and the opposite main surface uniform. it can.

Thereby, the reduction effect of the surge voltage generated at the time of switching in a plurality of sets of semiconductor devices can be obtained equally.
Note that although FIG. 7 shows an example in which two sets of semiconductor elements 521, 522 and the like are provided in one cooling member 570, a plurality of sets of three or more may be provided.

(Effect of Embodiment 5)
5-1) The semiconductor device of the fifth embodiment is
The cooling member 570 is provided with a plurality of sets of semiconductor elements 521, 522, high potential side terminal portions 551, 552, low potential side terminal portions 561, 562, and conductive members 581, 582 connected thereto. Features.
Therefore, a plurality of semiconductor devices forming a snubber capacitor by stray capacitance can be installed compactly.

5-2) The semiconductor device of the fifth embodiment is
The cooling member 570 includes a cooling path (not shown in FIG. 7, see FIG. 1) that is a cooling medium flow path,
The main surface 571 and the opposite main surface (not shown in FIG. 7) of the cooling member 570 are formed by the cooling fins 74.
Therefore, the resistance components can be made uniform by making the contact areas of the high potential side terminal portions 551 and 552 and the conductive members 581 and 582 the main surface 571 and the opposite main surface uniform. . Thereby, the effect of reducing the surge voltage generated when switching the plurality of semiconductor elements 521 and 522 can be obtained equally.

(Embodiment 6)
The sixth embodiment is a modification of the second embodiment, and is an example in which the cooling member 270 shown in FIG. 4 is formed of an insulating member (for example, Si ₃ N ₄ , SiC, or the like).

In the sixth embodiment, the cooling member 270 itself acts as a dielectric, increases the stray capacitance C1, and can further reduce the surge voltage generated during the switching operation of the semiconductor device.
Therefore, the cooling member 270 may be entirely formed of an insulating member, but at least the main surface 71 connected to the high potential side terminal portion 50 and the opposite main surface 72 connected to the conductive member 80 are insulated. If it is formed of a sex member, a desired effect can be obtained.

(Effect of Embodiment 6)
6-1) The semiconductor device of the sixth embodiment is
At least the main surface 71 and the opposite main surface 72 of the cooling member 270 are formed of an insulating member.
Therefore, since the cooling member 270 itself acts as a dielectric, the stray capacitance C1 can be increased, and the surge voltage generated during the switching operation of the semiconductor device can be further reduced.

  Although the semiconductor device of the present invention has been described based on the embodiment, the specific configuration is not limited to this embodiment, and the gist of the invention according to each claim of the claims is described. Unless it deviates, design changes and additions are allowed.

For example, in the embodiment, the low-potential side terminal portion joined to the main surface (first surface) of the cooling member and the high-potential side terminal portion connected to the low-potential side terminal portion on the opposite main surface (second surface). However, the present invention is not limited to this.
For example, a low potential side terminal portion may be joined to the main surface (first surface), and a conductive member connected to the high potential side terminal portion may be joined to the opposite main surface (second surface).
In the embodiment, the cooling member is connected to one of the high-potential side terminal portion and the low-potential side terminal portion directly and the other is connected via the conductive member. In, it is not limited to the thing by the joining which made the surfaces contact | abut. In short, both surfaces of the cooling member may be connected to the high potential side terminal portion and the low potential side terminal portion, respectively, and a snubber capacitor may be formed between them by a stray capacitance in parallel with the semiconductor element. Therefore, the connection is not limited to joining with overlapping surfaces such as interposing bonding wires.
In the embodiment, the cooling member has the cooling path inside and the cooling fins are stacked at intervals, but the cooling member is not limited thereto. For example, a cooling medium that radiates heat without circulating a cooling medium inside may be used. Moreover, you may use what does not have a cooling fin but cools by heat exchange with an internal cooling medium, or what radiates heat from an outer surface.

20 Semiconductor element 50 High potential side terminal portion 60 Low potential side terminal portion 70 Cooling member 71 Main surface (first surface)
72 Opposite main surface (2nd surface)
73 Cooling path 74 Cooling fin 75 Insulating member 76 Insulating member 80 Conductive member 270 Cooling member 380 Conductive member 400 Resistor (resistance region)
521 Semiconductor element 522 Semiconductor element 551 High potential side terminal portion 552 High potential side terminal portion 561 Low potential side terminal portion 562 Low potential side terminal portion 570 Cooling member 571 Main surface 581 Conductive member 582 Conductive member

Claims (9)

A semiconductor element;
A high-potential side terminal connected to the semiconductor element;
A low potential side terminal connected to the semiconductor element;
A cooling member having a cooling function on at least a first surface and a second surface that are front and back of the outer surface;
A semiconductor device comprising:
A conductive member connected to the second surface;
The high-potential side terminal portion and the low-potential side terminal portion are selectively connected to the first surface and the conductive member, respectively. The semiconductor device according to claim 1,
The cooling member is made of a conductive material,
An insulating member is interposed between the first surface of the cooling member and the high potential side terminal portion or the low potential side terminal portion connected thereto,
A semiconductor device, wherein an insulating member is interposed between the second surface of the cooling member and the conductive member connected thereto. The semiconductor device according to claim 2,
The semiconductor device, wherein the insulating member and the first surface and the second surface of the cooling member are metal-bonded. The semiconductor device according to claim 1,
The first surface of the cooling member and the high potential side terminal portion or the low potential side terminal portion connected to the first surface are metal-bonded,
The semiconductor device, wherein the second surface of the cooling member and the conductive member are metal-bonded. The semiconductor device according to claim 4,
At least the first surface and the second surface of the cooling member are formed of an insulating member. The semiconductor device according to any one of claims 1 to 5,
A cooling medium flow path is provided inside the cooling member,
The semiconductor device according to claim 1, wherein the first surface and the second surface of the cooling member are formed by cooling fins. The semiconductor device according to any one of claims 1 to 5,
At least one of the thickness dimension value and the contact area value of each surface of the cooling member between the two terminal portions connected to the first surface and the conductive member is the value of both terminal portions. of the at least one value towards higher coefficient of thermal expansion between those connected to the first surface and the conductive member, the conductive member and that is connected to the first surface, of the two terminal portions And a value smaller than the at least one value of the smaller thermal expansion coefficient. The semiconductor device according to any one of claims 1 to 7,
The semiconductor device, wherein the conductive member and the second surface of the cooling member are in contact with each other through a resistance region. The semiconductor device according to any one of claims 1 to 8,
A semiconductor device, wherein the cooling member is provided with a plurality of sets of the semiconductor element and the high potential side terminal portion, the low potential side terminal portion, and the conductive member connected thereto.