JP6372755B2 - Method for manufacturing vapor deposition mask, metal plate used for producing vapor deposition mask, and vapor deposition mask - Google Patents

Description

  The present invention relates to a method for manufacturing a vapor deposition mask having a plurality of through holes and a vapor deposition mask. Moreover, this invention relates to the metal plate used in order to produce a vapor deposition mask.

  In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have high definition, for example, a pixel density of 300 ppi or more. In portable devices, there is an increasing demand for supporting full high vision, and in this case, the pixel density of the display device is required to be, for example, 450 ppi or more.

  Organic EL display devices are attracting attention because of their good responsiveness and low power consumption. As a method of forming pixels of an organic EL display device, a method of forming pixels with a desired pattern using a vapor deposition mask including through holes arranged in a desired pattern is known. Specifically, first, a vapor deposition mask is brought into close contact with the substrate for the organic EL display device, and then, the vapor deposition mask and the substrate that are brought into close contact with each other are put into the vapor deposition device to perform vapor deposition of an organic material or the like.

  In general, a vapor deposition mask can be manufactured by forming a through hole in a metal plate by etching using a photolithography technique (see, for example, Patent Document 1). For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Next, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second recess in the second surface of the metal plate. Then, the area | region which is not covered with the 1st resist pattern among the 1st surfaces of a metal plate is etched, and a 1st recessed part is formed in the 1st surface of a metal plate. At this time, by performing etching so that the first recess and the second recess communicate with each other, a through-hole penetrating the metal plate can be formed.

  In the vapor deposition process using the vapor deposition mask, first, the vapor deposition mask and the substrate are arranged so that the second surface side of the vapor deposition mask faces the substrate. In addition, a crucible holding an evaporation material such as an organic material is disposed on the first surface side of the evaporation mask. Next, the vapor deposition material is heated to vaporize or sublimate the vapor deposition material. The vaporized or sublimated vapor deposition material adheres to the substrate through the through hole of the vapor deposition mask. As a result, the vapor deposition material is deposited on the surface of the substrate in a desired pattern corresponding to the position of the through hole of the vapor deposition mask.

JP 2014-148740 A

  As the pixel density of the organic EL display device increases, the size and arrangement pitch of the through holes of the vapor deposition mask become smaller. Further, when the through hole is formed in the metal plate by etching using a photolithography technique, the width of the resist pattern provided on the first surface or the second surface of the metal plate is also narrowed. For this reason, a resist film for forming a resist pattern is required to have high resolution. Moreover, the narrowing of the width of the resist pattern means that the contact area between the resist pattern and the metal plate is reduced. For this reason, the resist film for forming the resist pattern is also required to have high adhesion to the metal plate.

  The present invention has been made in consideration of such problems, and provides a metal plate capable of stably providing a resist pattern having a narrow width on the first surface or the second surface of the metal plate. Objective. The present invention also relates to a method for producing a vapor deposition mask using such a metal plate, and a vapor deposition mask produced using the metal plate.

  The present invention is a method of manufacturing a vapor deposition mask in which a plurality of through holes are formed, the step of preparing a metal plate including a first surface and a second surface located on the opposite side of the first surface; Forming a first resist pattern on the first surface of the metal plate and forming a second resist pattern on the second surface of the metal plate; and the second of the second surfaces of the metal plate. Etching a region not covered with a resist pattern to form a second recess in the second surface of the metal plate; and by the first resist pattern of the first surface of the metal plate. A first surface etching step of etching a non-covered region and forming a first recess in the first surface of the metal plate, the metal plate comprising a body layer made of an iron alloy containing nickel, Made of copper or copper alloy Even without comprising one of the surface layer, and at least one of said first surface or said second surface of said metal plate is composed of the surface layer, a method for manufacturing a deposition mask.

  In the vapor deposition mask manufacturing method according to the present invention, the first surface of the metal plate may be constituted by the surface layer.

  In the first surface etching step of the vapor deposition mask manufacturing method according to the present invention, the first recess may be formed by dissolving both the surface layer and the main body layer in the same etching solution.

  In the vapor deposition mask manufacturing method according to the present invention, the second surface of the metal plate may be constituted by the surface layer.

  In the manufacturing method of the vapor deposition mask by this invention, the thickness of the said surface layer of the said metal plate may be 0.3 micrometer or more.

  The deposition mask manufacturing method according to the present invention may further include a flash etching step of removing the surface layer after the second surface etching step and the first surface etching step.

  In the method for manufacturing a vapor deposition mask according to the present invention, the thickness of the metal plate may be 80 μm or less.

  The present invention is a metal plate used in the above-described method for manufacturing a vapor deposition mask, wherein the metal plate includes a main body layer made of an iron alloy containing nickel, and at least one surface layer made of copper or a copper alloy. And at least one of the first surface and the second surface of the metal plate is a metal plate constituted by the surface layer.

  The first surface of the metal plate according to the present invention may be constituted by the surface layer.

  The second surface of the metal plate according to the present invention may be constituted by the surface layer.

  In the metal plate according to the present invention, the thickness of the surface layer of the metal plate may be 0.3 μm or more.

  In the metal plate according to the present invention, the metal plate may have a thickness of 80 μm or less.

  The present invention includes a metal plate including a first surface and a second surface located on the opposite side of the first surface, and a plurality of through holes extending between the first surface and the second surface of the metal plate. , And the through hole is formed in the first surface of the metal plate so as to be connected to the second recess and the second recess formed in the second surface of the metal plate. And the metal plate includes a main body layer made of an iron alloy containing nickel and at least one surface layer made of copper or a copper alloy, and the first surface or the first surface of the metal plate. At least one of the two surfaces is a vapor deposition mask configured by the surface layer.

  In the vapor deposition mask according to the present invention, the first surface of the metal plate may be constituted by the surface layer.

  In the vapor deposition mask according to the present invention, the second surface of the metal plate may be constituted by the surface layer.

  The vapor deposition mask by this invention WHEREIN: The thickness of the said surface layer of the said metal plate may be 0.3 micrometer or more.

  In the vapor deposition mask according to the present invention, the metal plate may have a thickness of 80 μm or less.

  According to the present invention, a resist pattern having a narrow width can be stably provided on the first surface or the second surface of the metal plate. For this reason, the vapor deposition mask for producing the organic EL display device which has a high pixel density can be obtained stably.

FIG. 1 is a schematic plan view illustrating an example of a vapor deposition mask apparatus including a vapor deposition mask, for explaining an embodiment of the present invention. FIG. 2 is a view for explaining a method of vapor deposition using the vapor deposition mask apparatus shown in FIG. FIG. 3 is a partial plan view showing the vapor deposition mask shown in FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 7 is an enlarged cross-sectional view of the through hole shown in FIG. 4 and a region in the vicinity thereof. 8A to 8C are diagrams showing an outline of a method for manufacturing a vapor deposition mask. FIG. 9 is a schematic diagram for entirely explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. FIG. 10 is a cross-sectional view showing a long metal plate used for producing a vapor deposition mask. FIG. 11 is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a cross-sectional view showing a step of forming a resist film on a metal plate. FIG. 12 is a cross-sectional view for explaining an example of a method for manufacturing a vapor deposition mask and showing a step of closely attaching an exposure mask to a resist film. FIG. 13A is a diagram for explaining an example of a method for manufacturing a vapor deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 13B is a partial plan view showing a case where the long metal plate shown in FIG. 13A is viewed from the first surface side. FIG. 14 is a view for explaining an example of a method of manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along the normal direction. FIG. 15 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along a normal direction. FIG. 16 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along the normal direction. FIG. 17 is a view for explaining an example of a method for manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along a normal direction. FIG. 18 is a view for explaining an example of a method of manufacturing a vapor deposition mask, and is a view showing a long metal plate in a cross section along the normal direction. FIG. 19 is a view for explaining a modified example of the method of manufacturing the vapor deposition mask, and is a view showing a long metal plate in a cross section along the normal direction. FIG. 20 is a cross-sectional view showing a vapor deposition mask according to a modification of the embodiment of the present invention. FIG. 21 is a cross-sectional view showing a deposition mask according to a modification of the embodiment of the present invention. FIG. 22 is a view showing a modification of the vapor deposition mask device including the vapor deposition mask.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  FIGS. 1-22 is a figure for demonstrating one Embodiment and its modification by this invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention can be applied to a method of manufacturing a vapor deposition mask used for various purposes without being limited to such application.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “a plate” is a concept that includes a member that can be called a sheet or a film. Therefore, for example, a “metal plate” is distinguished from a member called “a metal sheet” or “a metal film” only by a difference in the name. Cannot be done.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate | board surface (sheet surface, film surface) of the said member.

  Further, as used herein, the shape, geometric conditions and physical characteristics and their degree are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, lengths and angles In addition, values of physical characteristics and the like are not limited to a strict meaning and are interpreted to include a range where a similar function can be expected.

(Deposition mask device)
First, an example of a vapor deposition mask apparatus including a vapor deposition mask will be described mainly with reference to FIGS. Here, FIG. 1 is a plan view showing an example of a vapor deposition mask device including a vapor deposition mask, and FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG. FIG. 3 is a plan view showing the vapor deposition mask from the first surface side, and FIGS. 4 to 6 are cross-sectional views at respective positions in FIG.

  The vapor deposition mask device 10 shown in FIGS. 1 and 2 includes a plurality of vapor deposition masks 20 made of a substantially rectangular metal plate 21 and a frame 15 attached to the peripheral edge of the plurality of vapor deposition masks 20. Yes. Each vapor deposition mask 20 is formed by etching the metal plate 21 including the first surface 21a and the second surface 21b located on the opposite side of the first surface 21a on both the first surface 21a side and the second surface 21b side. A large number of through-holes 25 are formed. As shown in FIG. 2, the vapor deposition mask apparatus 10 is supported in a vapor deposition apparatus 90 so that the vapor deposition mask 20 faces a lower surface of a substrate 92, for example, a glass substrate, which is an object to be vapor deposited. Used for vapor deposition.

  In the vapor deposition apparatus 90, the vapor deposition mask 20 and the substrate 92 come into close contact with each other by a magnetic force from a magnet (not shown). In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the vapor deposition mask apparatus 10. The vapor deposition material 98 in the crucible 94 is vaporized or sublimated by the heating from the heater 96 and adheres to the surface of the substrate 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 adheres to the substrate 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22. When color display is desired, the vapor deposition mask 20 (vapor deposition mask device 10) and the substrate 92 are relatively moved little by little along the arrangement direction of the through holes 25 (one direction described above), and the red organic The light emitting material, the green organic light emitting material, and the blue organic light emitting material may be deposited in this order.

  The frame 15 of the vapor deposition mask device 10 is attached to the peripheral edge of the rectangular vapor deposition mask 20. The frame 15 holds the vapor deposition mask 20 in a stretched state so that the vapor deposition mask 20 is not bent. The vapor deposition mask 20 and the frame 15 are fixed to each other, for example, by spot welding.

  The vapor deposition process is performed inside the vapor deposition apparatus 90 that is in a high temperature atmosphere. Therefore, during the vapor deposition process, the vapor deposition mask 20, the frame 15 and the substrate 92 held inside the vapor deposition apparatus 90 are also heated. At this time, the vapor deposition mask, the frame 15 and the substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. In this case, if the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the substrate 92 are greatly different, a positional shift caused by a difference in their dimensional change occurs. As a result, the dimension of the vapor deposition material adhering to the substrate 92 is generated. Accuracy and position accuracy will be reduced. In order to solve such a problem, it is preferable that the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the substrate 92. For example, when a glass substrate is used as the substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. Specifically, an invar material containing 34 to 38% by mass of nickel, or an iron alloy such as a super invar material further containing cobalt in addition to nickel, a material of a main body layer to be described later of the metal plate constituting the vapor deposition mask 20 is used. Can be used as In the present specification, the numerical range represented by the symbol “to” includes numerical values placed before and after the symbol “to”. For example, the numerical range defined by the expression “34-38 mass%” is the same as the numerical range defined by the expression “34 mass% or more and 38 mass% or less”.

(Deposition mask)
Next, the vapor deposition mask 20 will be described in detail. As shown in FIG. 1, in the present embodiment, the vapor deposition mask 20 is made of a metal plate 21 and has a substantially rectangular shape in a plan view, more precisely a substantially rectangular shape in a plan view. The metal plate 21 of the vapor deposition mask 20 includes an effective area 22 in which the through holes 25 are formed in a regular arrangement, and a surrounding area 23 surrounding the effective area 22. The surrounding area 23 is an area for supporting the effective area 22 and is not an area through which a deposition material intended to be deposited on the substrate passes. For example, in the vapor deposition mask 20 used for vapor deposition of an organic light emitting material for an organic EL display device, the effective region 22 is an area on the substrate 92 where the organic light emitting material is deposited to form a pixel, that is, production. This is a region in the vapor deposition mask 20 that faces an area on the substrate that forms the display surface of the organic EL display device substrate. However, through holes and recesses may be formed in the peripheral region 23 for various purposes. In the example shown in FIG. 1, each effective region 22 has a substantially rectangular shape in plan view, more precisely, a substantially rectangular shape in plan view.

  In the illustrated example, the plurality of effective regions 22 of the vapor deposition mask 20 are arranged in a row at a predetermined interval along one direction parallel to the longitudinal direction of the vapor deposition mask 20. In the illustrated example, one effective area 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask apparatus 10 (deposition mask 20) shown in FIG. 1, vapor deposition with multiple surfaces is possible.

  As shown in FIG. 3, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at a predetermined pitch along two directions orthogonal to each other in the effective region 22. Yes. An example of the through hole 25 formed in the metal plate 21 will be described in more detail with reference mainly to FIGS.

  As shown in FIGS. 4 to 6, the plurality of through-holes 25 are formed on the first surface 20 a on one side along the normal direction of the vapor deposition mask 20 and on the other side along the normal direction of the vapor deposition mask 20. The vapor deposition mask 20 is penetrated by extending between the second surface 20b as a side. In the illustrated example, as will be described in detail later, a first recess 30 is formed by etching on the first surface 21a of the metal plate 21 on one side in the normal direction of the vapor deposition mask, and the normal line of the metal plate 21 is obtained. A second recess 35 is formed on the second surface 21b which is the other side in the direction. The 1st recessed part 30 is connected to the 2nd recessed part 35, and is formed so that the 2nd recessed part 35 and the 1st recessed part 30 may mutually communicate by this. The through hole 25 is configured by a second recess 35 and a first recess 30 connected to the second recess 35.

  As shown in FIGS. 3 to 6, the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 from the first surface 20 a side to the second surface 20 b side of the vapor deposition mask 20. The cross-sectional area of each first recess 30 in the cross section along the line gradually decreases. Similarly, the cross-sectional area of each second recess 35 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is the second cross-sectional area from the second surface 20b side of the vapor deposition mask 20. It gradually becomes smaller toward the surface 20a.

  As shown in FIGS. 4 to 6, the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41. The connecting portion 41 is an overhanging portion where the wall surface 31 of the first recess 30 inclined with respect to the normal direction of the vapor deposition mask and the wall surface 36 of the second recess 35 inclined with respect to the normal direction of the vapor deposition mask merge. It is defined by the ridgeline. And the connection part 41 defines the penetration part 42 in which the area of the through-hole 25 becomes the minimum in the planar view of the vapor deposition mask 20.

  As shown in FIGS. 4 to 6, two adjacent through holes 25 on the other surface along the normal direction of the vapor deposition mask, that is, the second surface 20 b of the vapor deposition mask 20, are formed on the vapor deposition mask. They are separated from each other along the plate surface. That is, when the metal plate 21 is etched from the side of the second surface 21b of the metal plate 21 that corresponds to the second surface 20b of the vapor deposition mask 20, as in the manufacturing method described later, the second recess 35 is produced. The second surface 21b of the metal plate 21 remains between two adjacent second recesses 35.

  Similarly, as shown in FIGS. 4 and 6, two adjacent first concave portions 30 are also formed on one side along the normal direction of the vapor deposition mask, that is, on the first surface 20 a side of the vapor deposition mask 20. They may be separated from each other along the plate surface of the vapor deposition mask. That is, the first surface 21 a of the metal plate 21 may remain between two adjacent first recesses 30. In the following description, a portion of the effective area 22 of the first surface 21 a of the metal plate 21 that remains without being etched is also referred to as a top portion 43. By producing the vapor deposition mask 20 so that such a top portion 43 remains, the vapor deposition mask 20 can have sufficient strength. This can prevent the vapor deposition mask 20 from being damaged, for example, during transportation. If the width β of the top portion 43 is too large, shadowing may occur in the vapor deposition process, which may reduce the utilization efficiency of the vapor deposition material 98. Therefore, it is preferable that the vapor deposition mask 20 is manufactured so that the width β of the top portion 43 does not become excessively large. For example, the width β of the top part 43 is preferably 2 μm or less. Note that the width β of the top portion 43 generally varies depending on the direction in which the vapor deposition mask 20 is cut. For example, the width β of the top portion 43 shown in FIGS. 4 and 6 may be different from each other. In this case, the vapor deposition mask 20 may be configured such that the width β of the top portion 43 is 2 μm or less when the vapor deposition mask 20 is cut in any direction.

  In addition, as shown in FIG. 5, etching may be implemented so that two adjacent 1st recessed parts 30 may be connected depending on a place. That is, a place where the first surface 21 a of the metal plate 21 does not remain may exist between two adjacent first recesses 30.

  When the vapor deposition mask device 10 is accommodated in the vapor deposition device 90 as shown in FIG. 2, the first surface 20a of the vapor deposition mask 20 holds the vapor deposition material 98 as shown by the two-dot chain line in FIG. The second surface 20 b of the vapor deposition mask 20 faces the substrate 92. Therefore, the vapor deposition material 98 adheres to the substrate 92 through the first recess 30 whose cross-sectional area is gradually reduced. As shown by the arrow from the first surface 20a side to the second surface 20b in FIG. 4, the vapor deposition material 98 not only moves along the normal direction of the substrate 92 from the crucible 94 toward the substrate 92, but also the substrate. It may move in a direction greatly inclined with respect to the normal direction of 92. At this time, when the thickness of the vapor deposition mask 20 is large, most of the vapor deposition material 98 moving obliquely reaches the wall surface 31 of the first recess 30 before reaching the substrate 92 through the through hole 25. Adhere to. Therefore, in order to increase the utilization efficiency of the vapor deposition material 98, the thickness t of the vapor deposition mask 20 is reduced, thereby reducing the height of the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35. It is considered preferable. That is, it can be said that it is preferable to use a metal plate 21 having a thickness t as small as possible as long as the strength of the vapor deposition mask 20 can be secured as the metal plate 21 for constituting the vapor deposition mask 20. In consideration of this point, in the present embodiment, the thickness t of the vapor deposition mask 20 is preferably set to 80 μm or less, for example, in the range of 5 to 80 μm or in the range of 7 to 80 μm. In order to further improve the accuracy of vapor deposition, the thickness t of the vapor deposition mask 20 may be set to 40 μm or less, for example, in the range of 5 to 40 μm or in the range of 7 to 40 μm. The thickness t is the thickness of the surrounding region 23, that is, the thickness of the portion of the vapor deposition mask 20 where the first recess 30 and the second recess 35 are not formed. Therefore, it can be said that the thickness t is the thickness of the metal plate 21. As will be described later, when the surface layer 82 of the metal plate 21 is removed by flash etching, the thickness t of the vapor deposition mask 20 is smaller than the thickness of the metal plate 21 by the amount of the removed surface layer 82.

  In FIG. 4, a straight line L <b> 1 that passes through the connection portion 41 that is a portion having the minimum cross-sectional area of the through hole 25 and another arbitrary position of the wall surface 31 of the first recess 30 is a normal direction of the vapor deposition mask 20 The minimum angle made with respect to N is represented by the symbol θ1. In order to make the vapor deposition material 98 moving obliquely reach the substrate 92 as much as possible without reaching the wall surface 31, it is advantageous to increase the angle θ1. In order to increase the angle θ1, in addition to reducing the thickness t of the vapor deposition mask 20, it is also effective to reduce the width β of the top portion 43 described above.

  Although not limited, the vapor deposition mask 20 according to the present embodiment is particularly effective when an organic EL display device having a pixel density of 450 ppi or more is manufactured. Hereinafter, an example of the dimensions of the vapor deposition mask 20 required for producing such an organic EL display device having a high pixel density will be described with reference to FIG. FIG. 7 is an enlarged cross-sectional view showing the through hole 25 of the vapor deposition mask 20 shown in FIG.

In FIG. 7, as a parameter related to the shape of the through hole 25, the distance from the second surface 20 b of the vapor deposition mask 20 to the connection portion 41 in the direction along the normal direction of the vapor deposition mask 20, that is, the second recess 35. the height of the wall 36 is represented by reference numeral r _1. Further, the dimension of the second recess 35 at the portion where the second recess 35 is connected to the first recess 30, that is, the dimension of the through-hole 42 is represented by the symbol r ₂ . In FIG. 7, the angle formed by the straight line L2 connecting the connecting portion 41 and the leading edge of the second recess 35 on the second surface 21b of the metal plate 21 with respect to the normal direction N of the metal plate 21 is It is represented by the symbol θ2.

The case of manufacturing an organic EL display apparatus having the above pixel density 450Ppi, dimension _{r 2} of the penetrating part 42 is preferably set in the range of 10 to 60 [mu] m. Accordingly, it is possible to provide the vapor deposition mask 20 that can produce an organic EL display device having a high pixel density. Preferably, the height r ₁ of the wall surface 36 of the second recess 35 is set to 6 μm or less.

  Next, the above described angle θ2 shown in FIG. 7 will be described. The angle θ2 is inclined with respect to the normal direction N of the metal plate 21 and out of the vapor deposition material 98 that has come to pass through the through portion 42 in the vicinity of the connection portion 41, the vapor deposition material 98 that can reach the substrate 92. This corresponds to the maximum value of the inclination angle. This is because the vapor deposition material 98 that has come at an inclination angle larger than the angle θ2 adheres to the wall surface 36 of the second recess 35 before reaching the substrate 92. Therefore, by reducing the angle θ 2, it is possible to suppress the vapor deposition material 98 flying at a large inclination angle and passing through the through portion 42 from adhering to the substrate 92, and thereby the through portion 42 of the substrate 92. It can suppress that the vapor deposition material 98 adheres to the part outside the part which overlaps. That is, reducing the angle θ2 leads to suppression of variations in the area and thickness of the vapor deposition material 98 attached to the substrate 92. From such a viewpoint, for example, the through hole 25 is formed such that the angle θ2 is 45 degrees or less. In FIG. 7, the dimension of the second recess 35 in the second surface 21b, that is, the opening dimension of the through hole 25 in the second surface 21b is larger than the dimension r2 of the second recess 35 in the connection part 41. An example is shown. That is, the example in which the value of the angle θ2 is a positive value is shown. However, although not illustrated, the dimension r2 of the second recess 35 in the connection portion 41 may be larger than the dimension of the second recess 35 in the second surface 21b. That is, the value of the angle θ2 may be a negative value.

  Next, problems that may occur when the vapor deposition mask 20 is produced will be described. First, an outline of a method for manufacturing the vapor deposition mask 20 will be described with reference to FIGS.

  In the manufacturing process of the vapor deposition mask 20, first, as shown in FIG. 8A, a metal plate 21 including a first surface 21a and a second surface 21b is prepared. Also, as shown in FIG. 8A, a first resist pattern 65a is formed on the first surface 21a of the metal plate 21, and a second resist pattern 65b is formed on the second surface 21b. Thereafter, as shown in FIG. 8B, a second surface etching step for etching the region of the second surface 21 b of the metal plate 21 that is not covered by the second resist pattern 65 b to form the second recess 35. To implement. Next, as shown in FIG. 8C, the first surface etching that forms the first recess 30 by etching the region of the first surface 21 a of the metal plate 21 that is not covered by the first resist pattern 65 a. Perform the process.

  Here, as described above, in order to increase the utilization efficiency of the vapor deposition material 98 while giving the vapor deposition mask 20 sufficient strength, it is preferable that the top portion 43 having the smallest possible width remains. In this case, the width w of the first resist pattern 65a formed on the first surface 21a of the metal plate 21 corresponding to the top portion 43 is similarly reduced. 8A and 8B, the erosion of the metal plate 21 during the etching process does not proceed only in the normal direction (thickness direction) of the metal plate 21, but the metal plate 21. Also proceed along the direction of the plate. Accordingly, when the width w of the first resist pattern 65a is smaller than the degree of erosion that proceeds in the direction along the plate surface of the metal plate 21, the first resist pattern 65a is separated from the first surface 21a of the metal plate 21 in the etching process. It will peel off. It is considered that the erosion that proceeds in the direction along the plate surface of the metal plate 21 proceeds at least about 3 μm on one side. Considering this point, it is preferable that the width w of the first resist pattern 65a is set to be at least 6 μm larger than the width β of the top portion 43 described above. For example, the width w of the first resist pattern 65a is in the range of 20 to 30 μm.

  Incidentally, in order to accurately create the first resist pattern 65a having a narrow width, it is required that a resist film 65c described later for forming the resist pattern 65a has a high resolution. For example, as the resist film 65c, a so-called dry film such as a resist film containing an acrylic photo-curable resin is preferably used. As an example of a dry film, Hitachi Chemical RY3310 can be mentioned, for example.

  By producing the first resist pattern 65a using a dry film having a high resolution, the first resist pattern 65a having a small width w can be accurately formed on the first surface 21a of the metal plate 21. . On the other hand, when the width w of the first resist pattern 65a is reduced, the contact area between the first surface 21a of the metal plate 21 and the first resist pattern 65a is also reduced. For this reason, a resist film 65c, which will be described later, for forming the first resist pattern 65a is required to have high adhesion to the first surface 21a of the metal plate 21.

  However, as a result of extensive research by the present inventors, it has been found that the dry film adheres strongly to copper and copper alloys, but is difficult to adhere to iron-nickel alloys such as invar materials. For this reason, in the manufacturing process of the conventional vapor deposition mask 20, the process defect that the 1st resist pattern 65a and the 2nd resist pattern 65b peeled from the metal plate 21 had arisen. For example, during the developing process of developing resist patterns 65a and 65b described later by exposing exposed resist films 65c and 65d, the developer soaks between the metal plate 21 and the resist films 65c and 65d, There was a problem that the resist films 65c and 65d were peeled off from the metal plate 21.

  In consideration of such a problem, in the present embodiment, it is proposed to use a metal plate 21 including a main body layer 81 and a surface layer 82 described later as the metal plate 21 for producing the vapor deposition mask 20. Hereinafter, a method of manufacturing a vapor deposition mask using the metal plate 21 will be described mainly with reference to FIGS. In the manufacturing method of the vapor deposition mask 20 described below, as shown in FIG. 9, a long metal plate 64 is supplied, a through hole 25 is formed in the long metal plate 64, and the long metal plate 64 is further cut. By doing so, the vapor deposition mask 20 which consists of the sheet-like metal plate 21 is obtained.

  More specifically, the manufacturing method of the vapor deposition mask 20, the step of supplying a long metal plate 64 extending in a strip shape, and etching using a photolithography technique are performed on the long metal plate 64, and the long metal plate A second surface etching step for forming the second concave portion 35 on the second surface 64b from the side of the second surface 64b, and a first surface etching step for forming the first concave portion 30 on the long metal plate 64 from the side of the first surface 64a; Is included. And the 1st recessed part 30 and the 2nd recessed part 35 which were formed in the elongate metal plate 64 mutually communicate, and the through-hole 25 is produced in the elongate metal plate 64. FIG.

(Method for manufacturing vapor deposition mask)
FIG. 9 shows a manufacturing apparatus 60 for manufacturing the vapor deposition mask 20. As shown in FIG. 9, first, a wound body 62 in which a long metal plate 64 is wound around a core 61 is prepared. When the core 61 rotates and the wound body 62 is unwound, a long metal plate 64 extending in a strip shape is supplied as shown in FIG. The long metal plate 64 is formed with the through-hole 25 to form the sheet metal plate 21 and the vapor deposition mask 20.

  FIG. 10 is a cross-sectional view showing the long metal plate 64. As shown in FIG. 10, the long metal plate 64 includes a main body layer 81 and a surface layer 82. Here, the surface layer 82 is located on the first surface 64 a side of the main body layer 81, and the surface layer 82 constitutes the first surface 64 a of the long metal plate 64. The second surface 64 b of the long metal plate 64 is constituted by the main body layer 81.

  The main body layer 81 is a layer that occupies most of the long metal plate 64 and the metal plate 21, and is a layer made of an iron alloy containing nickel. For example, the main body layer 81 is made of an iron alloy such as an invar material containing 34 to 38% by mass of nickel or a super invar material containing cobalt in addition to nickel. On the other hand, the surface layer 82 is a layer provided to improve the adhesion between the first surface 64a of the long metal plate 64 and the first resist pattern 65a. For example, the surface layer 82 is made of copper (pure copper) or a copper alloy. Examples of the copper alloy include brass, bronze, white copper, and beryllium copper.

  The method for producing the long metal plate 64 including the main body layer 81 and the surface layer 82 is not particularly limited, and a known method can be appropriately used. For example, first, a base material made of Invar material is prepared. Next, by repeating rolling and annealing of the base material, a long main body layer 81 made of an invar material having a predetermined thickness can be obtained. Thereafter, by forming the surface layer 82 on the main body layer 81, the long metal plate 64 shown in FIG. 10 can be obtained. As a method of forming the surface layer 82 on the main body layer 81, a physical film forming method such as sputtering, a chemical film forming method, or the like can be used as appropriate.

Incidentally, the surface of the main body layer 81 generally has a predetermined surface roughness. For example, the arithmetic average roughness Sa of the surface of the main body layer 81 on the surface layer 82 side is in the range of 0.1 to 0.3 μm. In this case, if the thickness of the surface layer 82 formed on the surface of the main body layer 81 by sputtering or the like is too small, the surface layer 82 cannot follow the irregularities on the surface of the main body layer 81, and the surface on the surface of the main body layer 81 It is conceivable that the layer 82 becomes partially discontinuous. That is, an island-shaped surface layer 82 separated from other surface layer 82 portions may be formed on the surface of the main body layer 81. In this case, the adhesive force between the first surface 64a of the long metal plate 64 and the first resist pattern 65a is reduced in the portion where the surface layer 82 is not present, and as a result, the first resist pattern 65a is partially It is conceivable that the first surface 64a peels off or floats. In order to prevent such a situation, the thickness of the surface layer 82 is preferably set so as to follow the irregularities on the surface of the main body layer 81. For example, the thickness of the surface layer 82 is not less than the arithmetic average roughness Sa on the surface of the main body layer 81 on the surface layer 82 side. More specifically, the thickness of the surface layer 82 is 0.3 μm or more, and more preferably 0.5 μm or more.
On the other hand, as the thickness of the surface layer 82 is increased, the thickness of the entire metal plate 21 is also increased. As a result, the etching amount of the metal plate 21 in the thickness direction is increased in the second surface etching step. This increases the time required for the second surface etching process, and as a result, the etching amount of the metal plate 21 in the direction along the plate surface of the metal plate 21 also increases. Therefore, if the thickness of the surface layer 82 becomes too large, the second surface etching process may be continued until the top portion 43 does not remain. Considering this point, the upper limit of the thickness of the surface layer 82 is set to 1 μm, for example.

  The supplied long metal plate 64 is transported to the etching apparatus (etching means) 70 by the transport roller 72. Each process shown in FIGS. 11 to 18 is performed by the etching means 70. In the present embodiment, a plurality of vapor deposition masks 20 are assigned in the width direction of the long metal plate 64. That is, the plurality of vapor deposition masks 20 are produced from regions that occupy predetermined positions of the long metal plate 64 in the longitudinal direction. In this case, preferably, the plurality of vapor deposition masks 20 are assigned to the long metal plate 64 so that the longitudinal direction of the vapor deposition mask 20 matches the rolling direction of the long metal plate 64.

  First, as shown in FIG. 11, resist films 65 c and 65 d containing a negative photosensitive resist material are formed on the first surface 64 a and the second surface 64 b of the long metal plate 64. As a method of forming the resist films 65c and 65d, a film on which a layer containing a photosensitive resist material such as an acrylic photo-curable resin is formed, a so-called dry film is formed on the first surface 64a of the long metal plate 64 and on the first surface 64a. A method of pasting on the two surfaces 64b is employed. Here, as described above, the first surface 64 a of the long metal plate 64 is constituted by the surface layer 82. Therefore, the resist film 65c is attached to the surface layer 82. On the other hand, the second surface 64 b of the long metal plate 64 is constituted by the main body layer 81. Therefore, the resist film 65d is attached to the main body layer 81.

Next, exposure masks 85a and 85b are prepared so as not to transmit light to the regions to be removed of the resist films 65c and 65d. The exposure masks 85a and 85b are respectively formed on the resist films 65c and 65d as shown in FIG. To place. As the exposure masks 85a and 85b, for example, glass dry plates are used in which light is not transmitted to regions to be removed of the resist films 65c and 65d. Thereafter, the exposure masks 85a and 85b are sufficiently adhered to the resist films 65c and 65d by vacuum adhesion.
As the photosensitive resist material, a positive type may be used. In this case, an exposure mask in which light is transmitted through a region to be removed of the resist film is used as the exposure mask.

  Thereafter, the resist films 65c and 65d are exposed through the exposure masks 85a and 85b. Further, the resist films 65c and 65d are developed in order to form images on the exposed resist films 65c and 65d (development process). As described above, as shown in FIG. 13A, the first resist pattern 65a is formed on the first surface 64a of the long metal plate 64, and the second resist pattern is formed on the second surface 64b of the long metal plate 64. 65b can be formed. The developing process may include a resist heat treatment process for increasing the hardness of the resist films 65c and 65d, or for making the resist films 65c and 65d more firmly adhere to the long metal plate 64.

  FIG. 13B is a partial plan view showing a case where the long metal plate 64 provided with the first resist patterns 65a and 65b shown in FIG. 13A is viewed from the first surface 64a side. In FIG. 13B, the region where the first resist pattern 65a is provided is shaded. Moreover, the 1st recessed part 30, the wall surface 31, the connection part 41, and the top part 43 which are formed by the subsequent etching process are represented by the dotted line.

  Next, as shown in FIG. 14, a second surface etching step of etching a region of the second surface 64 b of the long metal plate 64 that is not covered with the second resist pattern 65 b using the second etching solution. carry out. For example, the second etching solution is applied to the second surface 64b of the long metal plate 64 from the nozzle disposed on the side facing the second surface 64b of the long metal plate 64 to be conveyed through the second resist pattern 65b. It is injected towards. As a result, as shown in FIG. 14, erosion by the second etching solution proceeds in a region of the long metal plate 64 that is not covered with the second resist pattern 65b. As a result, a large number of second recesses 35 are formed on the second surface 64 b of the long metal plate 64.

  As the second etching solution, a layer constituting the second surface 64b of the long metal plate 64, here, one that can dissolve the main body layer 81 is used. Since the main body layer 81 is made of an iron alloy containing nickel as described above, as the second etching solution, for example, a solution containing a ferric chloride solution (Baume 50 °, 42 °) and hydrochloric acid is used.

  Thereafter, as shown in FIG. 15, the second recess 35 is covered with a resin 69 having resistance to the first etching solution used in the subsequent first surface etching step. That is, the second recess 35 is sealed with the resin 69 having resistance to the first etching solution. In the example shown in FIG. 15, a film of resin 69 is formed so as to cover not only the formed second recess 35 but also the second surface 64b (second resist pattern 65b).

  Next, as shown in FIG. 16, a region of the first surface 64a of the long metal plate 64 that is not covered with the first resist pattern 65a is etched to form a first recess 30 in the first surface 64a. A one-side etching process is performed. The first surface etching process is performed until the second recess 35 and the first recess 30 communicate with each other, thereby forming the through hole 25.

  As a 1st etching liquid used in a 1st surface etching process, the etching liquid which can melt | dissolve both the surface layer 82 which comprises the 1st surface 64a of the elongate metal plate 64, and the main body layer 81 is used. May be. For example, as the first etching solution, a solution containing a ferric chloride solution (Baume 50 °, 42 °) and hydrochloric acid is used similarly to the second etching solution described above. In this case, in the first surface etching step, both the surface layer 82 and the main body layer 81 are dissolved in the same first etching solution, whereby the first recess 30 leading to the second recess 35 is formed.

  Note that the erosion by the first etching solution is performed in a portion of the long metal plate 64 that is in contact with the first etching solution. Therefore, erosion does not proceed only in the normal direction (thickness direction) of the long metal plate 64 but also proceeds in the direction along the plate surface of the long metal plate 64. Here, preferably, in the first surface etching step, the two first concave portions 30 respectively formed at positions facing two adjacent holes 66a of the first resist pattern 65a are positioned between the two holes 66a. It ends before joining at the back side of the bridge portion 67a. Thereby, as shown in FIG. 17, the above-described top portion 43 can be left on the first surface 64 a of the long metal plate 64.

  In the first surface etching step, an etching solution for dissolving the surface layer 82 and an etching solution for dissolving the main body layer 81 are separately prepared, and the surface layer 82 and the main body layer 81 are sequentially dissolved. Thus, the first recess 30 may be formed in the first surface 64a. However, in order to simplify the process, it is preferable to use an etching solution that can dissolve both the surface layer 82 and the main body layer 81. In other words, the surface layer 82 is preferably made of a material that can be dissolved in a ferric chloride solution that is an etching solution for the main body layer 81. The above-described copper (pure copper) or copper alloy exemplified as the material constituting the surface layer 82 can be dissolved in a ferric chloride solution that is an etching solution for the main body layer 81.

  Thereafter, as shown in FIG. 18, the resin 69 is removed from the long metal plate 64. The resin 69 can be removed by using, for example, an alkaline stripping solution. When the alkaline stripping solution is used, as shown in FIG. In addition, after removing the resin 69, the resist patterns 65a and 65b may be removed separately from the resin 69.

  The long metal plate 64 in which a large number of through holes 25 are formed in this way is conveyed to a cutting device (cutting means) 73 by conveyance rollers 72 and 72 that rotate while the long metal plate 64 is sandwiched. Is done. The supply core 61 described above is rotated through tension (tensile stress) acting on the long metal plate 64 by the rotation of the transport rollers 72 and 72, and the long metal plate 64 is supplied from the wound body 62. It is like that.

  Thereafter, the long metal plate 64 in which a large number of through-holes 25 are formed is cut into a predetermined length and width by a cutting device (cutting means) 73, whereby a sheet-like metal in which a large number of through-holes 25 are formed. A plate 21 is obtained.

  As described above, the vapor deposition mask 20 made of the metal plate 21 having a large number of through holes 25 is obtained. Here, according to the present embodiment, the long metal plate 64 that is the base of the metal plate 21 includes the main body layer 81 made of an iron alloy containing nickel and the surface layer 82 made of copper or a copper alloy. . The first surface 64 a of the long metal plate 64 is constituted by the surface layer 82. Therefore, the first resist pattern 65a provided on the first surface 64a of the long metal plate 64 and the resist film 65c that is the basis of the first resist pattern 65a are in contact with the surface layer 82. As the resist film 65c, as described above, a resist film having a high resolution, which is also referred to as a so-called dry film, such as a resist film containing an acrylic photo-curable resin is employed. Further, as described above, the copper or copper alloy constituting the surface layer 82 has higher adhesion to the dry film than the iron alloy constituting the main body layer 81. For this reason, according to the present embodiment, the first resist pattern 65a having a narrow width is accurately formed on the long metal plate while suppressing the occurrence of a process failure in which the first resist pattern 65a is peeled off from the metal plate 21. 64 on the first surface 64a. Therefore, the vapor deposition mask 20 used for manufacturing an organic EL display device having a high pixel density can be manufactured with a high yield.

  Further, according to the present embodiment, the first resist pattern 65a can be precisely formed on the first surface 64a of the long metal plate 64 with a desired width, so that the top portion 43 having the desired width β is formed. The provided vapor deposition mask 20 can be produced. For this reason, the above-mentioned angle θ1 can be made as large as possible while giving the vapor deposition mask 20 sufficient strength.

(Vapor deposition method)
Next, a method for depositing a deposition material on the substrate 92 using the obtained deposition mask 20 will be described. First, as shown in FIG. 2, the second surface 20 b of the vapor deposition mask 20 is brought into close contact with the surface of the substrate 92. At this time, the second surface 20b of the vapor deposition mask 20 may be brought into close contact with the surface of the substrate 92 using a magnet or the like (not shown). As shown in FIG. 1, a plurality of vapor deposition masks 20 are stretched on the frame 15 so that the surface of the vapor deposition mask 20 is parallel to the surface of the substrate 92. Thereafter, the vapor deposition material 98 in the crucible 94 is heated to vaporize or sublimate the vapor deposition material 98. The vaporized or sublimated vapor deposition material 98 adheres to the substrate 92 through the through hole 25 of the vapor deposition mask 20. As a result, the vapor deposition material 98 is formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  Here, according to the present embodiment, the top portion 43 having the desired width β can be left on the first surface 20a side, so that the vapor deposition mask 20 can have sufficient strength.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

  In the present embodiment described above, an example in which the vapor deposition mask 20 includes the surface layer 82 as shown in FIG. That is, the example in which the vapor deposition mask 20 is shipped and used while leaving the surface layer 82 included in the long metal plate 64 is shown. However, the present invention is not limited to this, and the vapor deposition mask 20 may not include the surface layer 82 as shown in FIG. For example, the manufacturing method of the vapor deposition mask 20 further includes a flash etching step of removing the surface layer 82 constituting the first surface 20a of the vapor deposition mask 20 after the second surface etching step and the first surface etching step described above. May be. In this case, as shown in FIG. 19, both the first surface 20a and the second surface 20b of the vapor deposition mask 20 are constituted by a main body layer 81 made of an iron alloy containing nickel. As an etchant for removing the surface layer 82 used in the flash etching process, for example, an etchant containing hydrogen peroxide and sulfuric acid can be used. More specifically, a treatment solution such as CA5330H manufactured by MEC can be used.

  In addition, when the above-mentioned flash etching process is implemented, the residue of the 1st resist pattern 65a which may remain on the 1st surface 21a of the metal plate 21 with the surface layer 82 is also removed simultaneously. For this reason, the vapor deposition mask 20 which has the 1st surface 20a of a cleaner state can be provided.

  In the above-described embodiment, an example is shown in which the surface layer 82 is positioned on the first surface 64 a side of the main body layer 81 and the surface layer 82 constitutes the first surface 64 a of the long metal plate 64. It was. However, the present invention is not limited to this, and as shown in FIG. 20 or FIG. 21, the surface layer 82 is positioned on the second surface 64 b side of the main body layer 81, and the surface layer 82 is the second metal plate 64. The surface 64b may be configured. Thereby, the adhesive force between the second surface 64b of the long metal plate 64 and the second resist pattern 65b can be increased.

When the surface layer 82 constitutes the second surface 64b of the long metal plate 64, the main body layer 81 may constitute the first surface 64a of the long metal plate 64 as shown in FIG.
Or as shown in FIG. 21, the surface layer 82 may comprise the 1st surface 64a also on the 1st surface 64a side similarly to the 2nd surface 64b side. That is, the long metal plate 64 includes a main body layer 81, a surface layer 82 located on the first surface 64 a side of the main body layer 81, and a surface layer 82 located on the second surface 64 b side of the main body layer 81. In addition, both the first surface 64 a and the second surface 64 b of the long metal plate 64 may be constituted by the surface layer 82. As a result, the adhesion between the first surface 64a of the long metal plate 64 and the first resist pattern 65a is enhanced, and between the second surface 64b of the long metal plate 64 and the second resist pattern 65b. Adhesion can be increased.

  Although not shown, the surface layer 82 may also be removed by further performing the above-described flash etching process in the vapor deposition mask 20 shown in FIGS.

  Further, in the above-described embodiment and each modification, an example in which the main body layer 81 and the surface layer 82 are in direct contact with each other has been described. However, the present invention is not limited to this, and although not illustrated, an intermediate layer may be interposed between the main body layer 81 and the surface layer 82. When such an intermediate layer is provided, the intermediate layer is preferably configured to have high adhesion to both the main body layer 81 and the surface layer 82. Specifically, the intermediate layer is configured such that the adhesion between the intermediate layer and the main body layer 81 and the surface layer 82 is higher than the adhesion between the main body layer 81 and the surface layer 82. Thereby, the stability of the laminated structure in the long metal plate 64 can be further enhanced. As a method for evaluating the adhesion, for example, a cross-cut test described in JIS K5400-8, a cross-cut method described in JIS-5600-5-6, a pull-off method described in JIS K5600-5-7, and the like are used. Can do.

  As described above, when the main body layer 81 is made of an iron alloy containing nickel and the surface layer 82 is made of copper or a copper alloy, chromium, a chromium alloy, or the like can be used as a material constituting the intermediate layer.

  In the above-described embodiment, an example in which a plurality of vapor deposition masks 20 are assigned in the width direction of the long metal plate 64 has been described. Moreover, the example in which the some vapor deposition mask 20 was attached to the flame | frame 15 in the vapor deposition process was shown. However, the present invention is not limited to this, and as shown in FIG. 22, a vapor deposition mask 20 having a plurality of effective regions 22 arranged in a lattice pattern along both the width direction and the longitudinal direction of the metal plate 21 is used. May be.

  In the above-described embodiment, an example in which the resist heat treatment process is performed in the development process is shown. However, if the adhesion between the long metal plate 64 and the resist films 65c and 65d is sufficiently ensured by providing the surface layer 82, the resist heat treatment step may be omitted. When the resist heat treatment step is not performed, the hardness of the first resist pattern 65a and the second resist pattern 65b is lower than when the resist heat treatment step is performed. Therefore, after the through hole 25 is formed, the resist patterns 65a and 65b can be removed more easily.

  EXAMPLES Next, although an Example demonstrates this invention further more concretely, this invention is not limited to description of a following example, unless the summary is exceeded.

Example 1
First, the metal plate 21 including the main body layer 81 and the surface layer 82 and having an area of 100 mm × 100 mm was prepared. Next, a resist film 65 c was provided on the surface layer 82. Thereafter, the resist film 65c was exposed and developed with a predetermined pattern. Thus, a plurality of linear resist patterns 65a having a width of 11 μm were formed on the surface layer 82 at a pitch of 29 μm. The interval between two adjacent linear resist patterns 65a is 18 μm.

  After the exposure / development, it was visually confirmed whether or not the plurality of linear resist patterns 65a were peeled or dropped. As a result, it was confirmed that all the resist patterns 65a remained.

Comparative Example 1
A metal plate 21 provided with no surface layer 82, that is, a metal plate 21 composed of a main body layer 81 was prepared. Next, in the same manner as in Example 1, a resist film 65c was provided on the main body layer 21 of the metal plate 21, and the resist film 65c was exposed and developed in a predetermined pattern.

  After the exposure / development, it was visually confirmed whether or not the resist pattern remained on the main body layer 21 of the metal plate 21. As a result, no resist pattern remained.

DESCRIPTION OF SYMBOLS 20 Deposition mask 21 Metal plate 21a 1st surface of metal plate 21b 2nd surface of metal plate 22 Effective area | region 23 Peripheral area | region 25 Through-hole 30 1st recessed part 31 Wall surface 35 2nd recessed part 36 Wall surface 43 Top part 64 Long metal plate 64a First surface of long metal plate 64b Second surface of long metal plate 65a First resist pattern 65b Second resist pattern 65c First resist film 65d Second resist film 81 Body layer 82 Surface layer 98 Vapor deposition material

Claims (14)

A method of manufacturing a vapor deposition mask in which a plurality of through holes are formed,
Preparing a metal plate including a first surface and a second surface located on the opposite side of the first surface;
Forming a first resist pattern on the first surface of the metal plate and forming a second resist pattern on the second surface of the metal plate;
A second surface etching step of etching a region of the second surface of the metal plate that is not covered by the second resist pattern to form a second recess in the second surface of the metal plate;
Etching a region of the first surface of the metal plate that is not covered by the first resist pattern, and a first surface etching step of forming a first recess in the first surface of the metal plate,
The metal plate includes a main body layer made of an iron alloy containing nickel, and at least one surface layer made of copper or a copper alloy and having a thickness of 0.5 μm to 1.0 μm ,
The method for manufacturing a vapor deposition mask, wherein at least one of the first surface and the second surface of the metal plate is constituted by the surface layer.   The method for manufacturing a vapor deposition mask according to claim 1, wherein the first surface of the metal plate is constituted by the surface layer.   3. The method for manufacturing a vapor deposition mask according to claim 2, wherein in the first surface etching step, the first recess is formed by dissolving both the surface layer and the main body layer in the same etching solution. 4. .   The said 2nd surface of the said metal plate is a manufacturing method of the vapor deposition mask as described in any one of Claims 1 thru | or 3 comprised by the said surface layer. Method for manufacturing a deposition mask, after said second surface etching step and the first surface etching step comprises further a flash etching step of removing the surface layer, vapor deposition according to any one of claims 1 to 4 Mask manufacturing method. The manufacturing method of the vapor deposition mask as described in any one of Claims 1 thru | or 5 whose thickness of the said metal plate is 80 micrometers or less. It is a metal plate used with the manufacturing method of the vapor deposition mask of Claim 1, Comprising:
The metal plate includes a main body layer made of an iron alloy containing nickel, and at least one surface layer made of copper or a copper alloy and having a thickness of 0.5 μm to 1.0 μm ,
At least one of the first surface or the second surface of the metal plate is a metal plate configured by the surface layer. The metal plate according to claim 7 , wherein the first surface of the metal plate is constituted by the surface layer. The metal plate according to claim 7 or 8 , wherein the second surface of the metal plate is constituted by the surface layer. The thickness of the metal plate is 80μm or less, the metal plate according to any one of claims 7 to 9. A metal plate including a first surface and a second surface located on the opposite side of the first surface;
A plurality of through holes extending between the first surface and the second surface of the metal plate,
The through hole includes a second recess formed in the second surface of the metal plate, and a first recess formed in the first surface of the metal plate so as to be connected to the second recess. Have
The metal plate includes a main body layer made of an iron alloy containing nickel, and at least one surface layer made of copper or a copper alloy and having a thickness of 0.5 μm to 1.0 μm ,
At least one of the first surface or the second surface of the metal plate is a vapor deposition mask configured by the surface layer. The said 1st surface of the said metal plate is a vapor deposition mask of Claim 11 comprised by the said surface layer. The said 2nd surface of the said metal plate is a vapor deposition mask of Claim 11 or 12 comprised by the said surface layer. The vapor deposition mask as described in any one of Claims 11 thru | or 13 whose thickness of the said metal plate is 80 micrometers or less.

Images