JP6001071B2

JP6001071B2 - Loop antenna

Info

Publication number: JP6001071B2
Application number: JP2014522931A
Authority: JP
Inventors: ソクウニョン; ピーギンスバーグブライアン; ハルーンバヘル; ラマスワミスリナス; ビーレンタラヴィジェイ
Original assignee: 日本テキサス・インスツルメンツ株式会社; テキサスインスツルメンツインコーポレイテッド
Priority date: 2011-07-22
Filing date: 2012-07-23
Publication date: 2016-10-05
Anticipated expiration: 2032-07-23
Also published as: JP2014522172A; CN103703615A; WO2013016293A2; WO2013016293A8; WO2013016293A9; CN103703615B; US8842046B2; US20130021208A1; WO2013016293A3

Description

本願は、概してループアンテナに関し、更に特定して言えば、テラヘルツ周波数範囲で用いるためのループに関連する。 The present application relates generally to loop antennas, and more particularly to loops for use in the terahertz frequency range.

ループアンテナは、長年にわたって様々の用途において用いられてきているが、高周波数用途（即ち、テラヘルツ放射）では及びモノシリックに集積されるアンテナでは、ループアンテナの利用には種々の障害があり得る。例えば、アンテナと伝送媒体との間のパッケージング材料に関連付けられる損失がある。別の例は、寄生放射及び印刷回路基板又はＰＣＢにおけるトランスからのインタフェースに起因する損失である。従って、改善されたシステムが求められている。従来のシステムの幾つかの例は下記文献に記載されている。
米国特許番号第７，５４５，３２９号 J. Grzyb, D. Liu, U. Pfeiffer, and B. Gaucher, "Wideband cavity-backed folded dipole superstrate antenna for 60 GHz applications," Proceedings of the 2006 IEEE AP-S International Symposium and UNSC/URLI and AMEREM Meetings, pp. 3939-3942, Albuquerque, New Mexico, July 9-14, 2006 Loop antennas have been used in a variety of applications for many years, but for high frequency applications (ie, terahertz radiation) and for monolithically integrated antennas, the use of loop antennas can have various obstacles. For example, there is a loss associated with the packaging material between the antenna and the transmission medium. Another example is parasitic radiation and losses due to the interface from the transformer in the printed circuit board or PCB. Therefore, there is a need for an improved system. Some examples of conventional systems are described in:
US Patent No. 7,545,329 J. Grzyb, D. Liu, U. Pfeiffer, and B. Gaucher, "Wideband cavity-backed folded dipole superstrate antenna for 60 GHz applications," Proceedings of the 2006 IEEE AP-S International Symposium and UNSC / URLI and AMEREM Meetings, pp. 3939-3942, Albuquerque, New Mexico, July 9-14, 2006

例示の実施例が或る装置を提供する。この装置は、第１のフィード端子と第２のフィード端子と接地端子とを有する基板、基板の上に配置される第１のメタライゼーション層、及び第２のメタライゼーション層を含む。第１のメタライゼーション層は、第１のウィンドウ領域と、第１の導電性領域と、第２の導電性領域と、第３の導電性領域とを含む。第１の導電性領域は、第１のフィード端子の上に配置され、且つ、第１のフィード端子と電気的に接触しており、実質的に円形であり、第１のウィンドウ領域内に配置される。第２の導電性領域は、第２のフィード端子の上に配置され、且つ、第２のフィード端子と電気的に接触しており、実質的に円形であり、第１のウィンドウ領域内に配置される。第３の導電性領域は、接地端子の上に配置され、且つ、接地端子と電気的に接触しており、第１のウィンドウ領域を実質的に囲む。第２のメタライゼーション層は、第１のメタライゼーション層の第１、第２、及び第３の導電性領域の上に配置され、且つ、第１のメタライゼーション層の第１、第２、及び第３の導電性領域と電気的に接触しており、第２のメタライゼーション層は、第１のウィンドウ領域と少なくとも部分的に整合される第２のウィンドウ領域を含む。 An exemplary embodiment provides an apparatus. The apparatus includes a substrate having a first feed terminal, a second feed terminal, and a ground terminal, a first metallization layer disposed on the substrate, and a second metallization layer. The first metallization layer includes a first window region, a first conductive region, a second conductive region, and a third conductive region. The first conductive region is disposed on the first feed terminal and is in electrical contact with the first feed terminal, is substantially circular, and is disposed within the first window region. Is done. The second conductive region is disposed on the second feed terminal and is in electrical contact with the second feed terminal and is substantially circular and disposed within the first window region. Is done. The third conductive region is disposed on the ground terminal and is in electrical contact with the ground terminal and substantially surrounds the first window region. The second metallization layer is disposed on the first, second, and third conductive regions of the first metallization layer, and the first metallization layer first, second, and In electrical contact with the third conductive region, the second metallization layer includes a second window region that is at least partially aligned with the first window region.

一実施例に従って、接地端子は第１の接地端子を更に含む。基板は第２の接地端子を有する。第１のフィード端子、第２のフィード端子、第１の接地端子、及び第２の接地端子は実質的に整合される。 According to one embodiment, the ground terminal further includes a first ground terminal. The substrate has a second ground terminal. The first feed terminal, the second feed terminal, the first ground terminal, and the second ground terminal are substantially aligned.

一実施例に従って、第１のウィンドウ領域は実質的に矩形である。 According to one embodiment, the first window area is substantially rectangular.

一実施例に従って、装置は、第１の接地端子と第３の導電性領域との間に延びる第１のビア、第２の接地端子と第３の導電性領域との間に延びる第２のビア、第１のフィード端子と第１の導電性領域間に延びる第３のビア、及び第２のフィード端子と第２の導電性領域間に延びる第４のビアを更に含む。 According to one embodiment, the apparatus includes a first via extending between the first ground terminal and the third conductive region, a second via extending between the second ground terminal and the third conductive region. It further includes a via, a third via extending between the first feed terminal and the first conductive region, and a fourth via extending between the second feed terminal and the second conductive region.

一実施例に従って、第２のメタライゼーション層は、第２のウィンドウ導電性領域を実質的に囲み、且つ、第３の導電性領域と電気的に接触している第４の導電性領域と、第２のウィンドウ領域を二分し、且つ、第４の導電性領域と電気的に接触する第５の導電性領域と、第１の導電性領域の上に配置され、第１の導電性領域と概して同一の広がりを有し、第１及び第５の導電性領域と電気的に接触している第６の導電性領域と、第２の導電性領域の上に配置され、第２の導電性領域と概して同一の広がりを有し、第２及び第５の導電性領域と電気的に接触している第７の導電性領域とを更に含む。 According to one embodiment, the second metallization layer includes a fourth conductive region that substantially surrounds the second window conductive region and is in electrical contact with the third conductive region; A second conductive region that bisects the second window region and that is in electrical contact with the fourth conductive region; and is disposed on the first conductive region; A sixth conductive region generally coextensive and in electrical contact with the first and fifth conductive regions and disposed over the second conductive region, the second conductive region; And a seventh conductive region that is generally coextensive with the region and is in electrical contact with the second and fifth conductive regions.

一実施例に従って、装置は、第３及び第４の導電性領域間に延びる第５のビアのセット、第１及び第６の導電性領域間に延びる第６のビア、及び第２及び第７の導電性領域間に延びる第７のビアを更に含む。 According to one embodiment, the apparatus includes a fifth via set extending between the third and fourth conductive regions, a sixth via extending between the first and sixth conductive regions, and second and seventh. A seventh via extending between the conductive regions.

一実施例に従って、第１のフィード端子、第２のフィード端子、第１の接地端子、及び第２の接地端子がボンドパッドである。 According to one embodiment, the first feed terminal, the second feed terminal, the first ground terminal, and the second ground terminal are bond pads.

一実施例に従って或る装置が提供される。この装置は集積回路（ＩＣ）及びアンテナパッケージを含む。ＩＣは、無線周波数（ＲＦ）回路要素と、ＲＦ回路要素に結合される第１のボンドパッドと、ＲＦ回路要素に結合される第２のボンドパッドと、ＲＦ回路要素に結合され、且つ、接地に結合される第３のボンドパッドとを有する。アンテナパッケージは、基板と、基板に位置し、且つ、第１のボンドパッドと電気的に接触している第４のボンドパッドと、基板に位置し、且つ、第２のボンドパッドと電気的に接触している第５のボンドパッドと、基板に位置し、且つ、第３のボンドパッドと電気的に接触している第６のボンドパッドと、基板の上に配置される第１のメタライゼーション層と、第２のメタライゼーション層を有する。第１のメタライゼーション層は、第１のウィンドウ領域と、第１の導電性領域と、第２の導電性領域と、第３の導電性領域を含む。第１の導電性領域は、第４のボンドパッドの上に配置され、且つ、第４のボンドパッドと電気的に接触している。第１の導電性領域は、実質的に円形であり、第１のウィンドウ領域内に配置される。第２の導電性領域は、第５のボンドパッドの上に配置され、且つ、第５のボンドパッドと電気的に接触している。第２の導電性領域は実質的に円形である。第２の導電性領域は第１のウィンドウ領域内に配置される。第３の導電性領域は、第６のボンドパッドの上に配置され、且つ、第６のボンドパッドと電気的に接触している。第３の導電性領域は第１のウィンドウ領域を実質的に囲む。第２のメタライゼーション層は、第１のメタライゼーション層の第１、第２、及び第３の導電性領域の上に配置され、第１のメタライゼーション層の第１、第２、及び第３の導電性領域と電気的に接触している。第２のメタライゼーション層は、第１のウィンドウ領域と少なくとも部分的に整合される第２のウィンドウ領域を含む。 An apparatus is provided according to one embodiment. The device includes an integrated circuit (IC) and an antenna package. The IC is coupled to a radio frequency (RF) circuit element, a first bond pad coupled to the RF circuit element, a second bond pad coupled to the RF circuit element, the RF circuit element, and ground. And a third bond pad coupled to the. The antenna package includes a substrate, a fourth bond pad located on the substrate and in electrical contact with the first bond pad, and located on the substrate and electrically connected to the second bond pad. A fifth bond pad in contact; a sixth bond pad located on the substrate and in electrical contact with the third bond pad; and a first metallization disposed on the substrate And a second metallization layer. The first metallization layer includes a first window region, a first conductive region, a second conductive region, and a third conductive region. The first conductive region is disposed on the fourth bond pad and is in electrical contact with the fourth bond pad. The first conductive region is substantially circular and is disposed within the first window region. The second conductive region is disposed on the fifth bond pad and is in electrical contact with the fifth bond pad. The second conductive region is substantially circular. The second conductive region is disposed in the first window region. The third conductive region is disposed on the sixth bond pad and is in electrical contact with the sixth bond pad. The third conductive region substantially surrounds the first window region. The second metallization layer is disposed over the first, second, and third conductive regions of the first metallization layer, and the first, second, and third of the first metallization layer. In electrical contact with the conductive region. The second metallization layer includes a second window region that is at least partially aligned with the first window region.

一実施例に従って、アンテナパッケージは第７のボンドパッドを更に含む。第４、第５、第６、及び第７のボンドパッドは実質的に整合される。ＩＣは第８のボンドパッドを更に含み、第８のボンドパッドは、ＲＦ回路要素に結合され、且つ、接地に結合される。第７のボンドパッドは第８のボンドパッドと電気的に接触している。 According to one embodiment, the antenna package further includes a seventh bond pad. The fourth, fifth, sixth, and seventh bond pads are substantially aligned. The IC further includes an eighth bond pad, which is coupled to the RF circuit element and to ground. The seventh bond pad is in electrical contact with the eighth bond pad.

一実施例に従って、装置は、第６のボンドパッドと第３の導電性領域との間に延びる第１のビア、第７のボンドパッドと第３の導電性領域との間に延びる第２のビア、第４のボンドパッドと第１の導電性領域との間に延びる第３のビア、及び第５のボンドパッドと第２の導電性領域との間に延びる第４のビアを更に含む。 According to one embodiment, the apparatus includes a first via extending between the sixth bond pad and the third conductive region, a second via extending between the seventh bond pad and the third conductive region. It further includes a via, a third via extending between the fourth bond pad and the first conductive region, and a fourth via extending between the fifth bond pad and the second conductive region.

一実施例に従って、装置は、第３及び第４の導電性領域間に延びる第５のビアのセットと、第１及び第６の導電性領域間に延びる第６のビアと、第２及び第７の導電性領域間に延びる第７のビアとを更に含む。 According to one embodiment, the apparatus includes a fifth via set extending between the third and fourth conductive regions, a sixth via extending between the first and sixth conductive regions, a second and second And a seventh via extending between the seven conductive regions.

一実施例に従って或る装置が提供される。この装置は、集積回路（ＩＣ）、アンテナパッケージ、及び高インピーダンス表面（ＨＩＳ）を含む。ＩＣは、複数のＲＦトランシーバと、ボンドパッドの複数のセットとを有する。ボンドパッドの複数のセットの各セットがＲＦトランシーバの少なくとも１つに関連付けられる。ボンドパッドの各セットは、その関連するＲＦトランシーバに結合される第１のボンドパッドと、その関連するＲＦトランシーバに結合される第２のボンドパッドと、その関連するＲＦトランシーバに結合され、且つ、接地に結合される第３のボンドパッドと、その関連するＲＦトランシーバに結合され、且つ、接地に結合される第４のボンドパッドとを含む。アンテナパッケージは、基板と、アンテナのアレイと、第１のメタライゼーション層と、第２のメタライゼーション層とを有する。各アンテナはＲＦトランシーバの少なくとも１つに関連付けられる。各アンテナは、基板に位置し、且つ、その関連する第１のボンドパッドと電気的に接触している第５のボンドパッドと、基板に位置し、且つ、その関連する第２のボンドパッドと電気的に接触している第６のボンドパッドと、基板に位置し、且つ、その関連する第３のボンドパッドと電気的に接触している第７のボンドパッドと、基板に位置し、且つ、その関連する第３のボンドパッドと電気的に接触している第８のボンドパッドとを含む。第５、第６、及び第７、及び第８のボンドパッドは実質的に整合される。第１のメタライゼーション層は基板の上に配置される。第１のメタライゼーション層は、第１のウィンドウ領域と、第１の導電性領域と、第２の導電性領域と、第３の導電性領域を含む。第１の導電性領域は、第５のボンドパッドの上に配置され、且つ、第５のボンドパッドと電気的に接触している。第１の導電性領域は実質的に円形であり、第１のウィンドウ領域内に配置される。第２の導電性領域は、第６のボンドパッドの上に配置され、且つ、第６のボンドパッドと電気的に接触している。第２の導電性領域は実質的に円形である。第２の導電性領域は、第１のウィンドウ領域内に配置される。第３の導電性領域は、第７及び第８のボンドパッドの上に配置され、且つ、第７及び第８のボンドパッドと電気的に接触している。第３の導電性領域は第１のウィンドウ領域を実質的に囲む。第２のメタライゼーション層は、第１のメタライゼーション層の第１、第２、及び第３の導電性領域の上に配置され、第１のメタライゼーション層の第１、第２、及び第３の導電性領域と電気的に接触している。第２のメタライゼーション層は、第１のウィンドウ領域と少なくとも部分的に整合される第２のウィンドウ領域を含む。ＨＩＳは、基板上に配置され、アンテナのアレイを実質的に囲む。 An apparatus is provided according to one embodiment. The device includes an integrated circuit (IC), an antenna package, and a high impedance surface (HIS). The IC has multiple RF transceivers and multiple sets of bond pads. Each set of the plurality of sets of bond pads is associated with at least one of the RF transceivers. Each set of bond pads is coupled to a first bond pad coupled to the associated RF transceiver, a second bond pad coupled to the associated RF transceiver, the associated RF transceiver, and A third bond pad coupled to ground and a fourth bond pad coupled to its associated RF transceiver and coupled to ground. The antenna package has a substrate, an array of antennas, a first metallization layer, and a second metallization layer. Each antenna is associated with at least one of the RF transceivers. Each antenna is located on the substrate and in electrical contact with its associated first bond pad, and each antenna is located on the substrate and associated with the second bond pad. A sixth bond pad in electrical contact, a seventh bond pad located on the substrate and in electrical contact with its associated third bond pad, located on the substrate; and And an eighth bond pad in electrical contact with its associated third bond pad. The fifth, sixth, and seventh and eighth bond pads are substantially aligned. The first metallization layer is disposed on the substrate. The first metallization layer includes a first window region, a first conductive region, a second conductive region, and a third conductive region. The first conductive region is disposed on the fifth bond pad and is in electrical contact with the fifth bond pad. The first conductive region is substantially circular and is disposed within the first window region. The second conductive region is disposed on the sixth bond pad and is in electrical contact with the sixth bond pad. The second conductive region is substantially circular. The second conductive region is disposed in the first window region. The third conductive region is disposed on the seventh and eighth bond pads and is in electrical contact with the seventh and eighth bond pads. The third conductive region substantially surrounds the first window region. The second metallization layer is disposed over the first, second, and third conductive regions of the first metallization layer, and the first, second, and third of the first metallization layer. In electrical contact with the conductive region. The second metallization layer includes a second window region that is at least partially aligned with the first window region. The HIS is disposed on the substrate and substantially surrounds the array of antennas.

一実施例に従って、装置は、第７のボンドパッドと第３の導電性領域との間に延びる第１のビアと、第８のボンドパッドと第３の導電性領域との間に延びる第２のビアと、第５のボンドパッドと第１の導電性領域との間に延びる第３のビアと、第６のボンドパッドと第２の導電性領域との間に延びる第４のビアとを更に含む。 According to one embodiment, the device includes a first via extending between the seventh bond pad and the third conductive region, and a second extending between the eighth bond pad and the third conductive region. A third via extending between the fifth bond pad and the first conductive region, and a fourth via extending between the sixth bond pad and the second conductive region. In addition.

一実施例に従って、この装置は、第３及び第４の導電性領域間に延びる第５のビアのセットと、第１及び第６の導電性領域間に延びる第６のビアと、第２及び第７の導電性領域間に延びる第７のビアとを更に含む。 According to one embodiment, the apparatus includes a fifth set of vias extending between the third and fourth conductive regions, a sixth via extending between the first and sixth conductive regions, And a seventh via extending between the seventh conductive regions.

例示の実施例を添付の図面を参照して説明する。 Exemplary embodiments will be described with reference to the accompanying drawings.

図１は本発明の好ましい一実施例に従ったシステムである。FIG. 1 is a system according to a preferred embodiment of the present invention.

図２は、図１のアンテナパッケージの平面図である。FIG. 2 is a plan view of the antenna package of FIG.

図３は、図２のアンテナのための基板の平面図である。FIG. 3 is a plan view of a substrate for the antenna of FIG.

図４は、切り取り線Ｉ−Ｉに沿った図２の断面図である。FIG. 4 is a cross-sectional view of FIG. 2 along the cut line II.

図５は、図２のアンテナのためのメタライゼーション層の平面図である。FIG. 5 is a plan view of a metallization layer for the antenna of FIG.

図６は、切り取り線ＩＩ−ＩＩに沿った図５の断面図である。6 is a cross-sectional view of FIG. 5 along the cut line II-II.

図７は、切り取り線ＩＩＩ−ＩＩＩに沿った図５の断面図である。FIG. 7 is a cross-sectional view of FIG. 5 taken along section line III-III.

図８は、図２のアンテナのためのメタライゼーション層の平面図である。FIG. 8 is a plan view of a metallization layer for the antenna of FIG.

図９は、切り取り線ＩＶ−ＩＶに沿った図８の断面図である。FIG. 9 is a cross-sectional view of FIG. 8 taken along section line IV-IV.

図１０は、図２のアンテナのための放射パターンの一例を示す図である。FIG. 10 is a diagram illustrating an example of a radiation pattern for the antenna of FIG.

図１は、一実施例に従ったシステム１００の一例を示す。このシステム１００は概して、印刷回路基板（ＰＣＢ）１０２、アンテナパッケージ１０４、及び集積回路（ＩＣ）１０６を含む。ＩＣ１０６は概して無線周波数（ＲＦ）回路要素を含む。例えば、ＩＣ１０６は、複数のトランシーバを含むテラヘルツフェーズドアレイシステムであり得る。このようなＩＣの一例を、２０１０年９月９日に出願された同時継続中の米国特許出願番号１２／８７８、４８４、発明の名称「テラヘルツフェーズドアレイシステム」で見ることができ、これはあらゆる目的のため参照として本明細書に組み込む。このＩＣ１０６はその後、各トランシーバが、（例えば）アンテナパッケージ１０４上に含まれるアンテナと通信することができるように、アンテナパッケージ１０４に固定される。典型的に、ＩＣ１０６上のボンドパッドが、はんだボール１１０を介してアンテナパッケージ１０４上のボンドパッドに固定される。アンテナパッケージ１０４はその後、ＰＣＢ１０２に固定され得る（これは、典型的に、はんだボール１０８を介して互いに固定されるボンドパッドを介して達成される）。この配置を用いることにより、クロストーク及び損失が低減され得る。
米国特許出願番号１２／８７８，４８４ FIG. 1 shows an example of a system 100 according to one embodiment. The system 100 generally includes a printed circuit board (PCB) 102, an antenna package 104, and an integrated circuit (IC) 106. IC 106 generally includes radio frequency (RF) circuit elements. For example, IC 106 may be a terahertz phased array system that includes multiple transceivers. An example of such an IC can be found in co-pending US patent application Ser. No. 12 / 878,484, filed Sep. 9, 2010, entitled "Terahertz Phased Array System" Incorporated herein by reference for purposes. This IC 106 is then secured to the antenna package 104 so that each transceiver can communicate with an antenna included on the antenna package 104 (for example). Typically, bond pads on IC 106 are secured to bond pads on antenna package 104 via solder balls 110. The antenna package 104 can then be secured to the PCB 102 (this is typically accomplished via bond pads that are secured together via solder balls 108). By using this arrangement, crosstalk and losses can be reduced.
US Patent Application No. 12 / 878,484

図２において、アンテナパッケージ１０４の一例を更に詳細に見ることができる。図示するように、アンテナパッケージは、高インピーダンス表面（ＨＩＳ）により実質的に囲まれるフェーズドアレイ２０４を含む。このようなＨＩＳの一例を、２０１１年５月２６日に出願された米国特許出願番号１３／１１６、８８５、発明の名称「高インピーダンス表面」で見ることができ、あらゆる目的のため参照として本明細書に組み込む。また、図示するように、フェーズドアレイ２０４はアンテナ２０６−１〜２０６−４を含むが、任意の数のアンテナが可能である。このフェーズドアレイ２０４はその後、放射のビームを導くために用いられ得る。
米国特許出願番号１３／１１６、８８５ In FIG. 2, an example of the antenna package 104 can be seen in more detail. As shown, the antenna package includes a phased array 204 that is substantially surrounded by a high impedance surface (HIS). An example of such a HIS can be found in US patent application Ser. No. 13 / 116,885, filed May 26, 2011, entitled “High Impedance Surface”, hereby incorporated by reference for all purposes. Include in the book. Also, as shown, phased array 204 includes antennas 206-1 through 206-4, although any number of antennas are possible. This phased array 204 can then be used to direct a beam of radiation.
US Patent Application No. 13 / 116,885

図２〜図９に移ると、アンテナ２０６−１〜２０６−４（後述では、２０６で示す）の各々の構造の一例を見ることができる。アンテナ２０６は、概して基板３０２の上に形成され、（例えば）１６０ＧＨｚで動作するように構成され得る。この例の動作周波数では、（図２〜図９に図示するように）アンテナにより占められるエリアは１１２０μｍ×１１２０μｍであり得る。基板３０２を介して伸びるのは、ボンドパッド３０４−１〜３０４−４（これらは例えば銅で形成され得る）である。ボンドパッド３０４−１及び３０４−４は概して接地端子として動作し、ボンドパッド３０４−２及び３０４−３は概して、ＩＣ１０６上のＲＦ回路要素（即ち、トランシーバ）と通信される差動フィード端子（即ち、正及び負）として動作する。これらのボンドパッド３０４−１〜３０４−４は、アンテナ２０６により占められるエリアを二分するラインに沿って互いに概して整合される。また、ビア３０６−１〜３０６−４（これらは例えばタングステンで形成され得る）は、それぞれ、ボンドパッド３０４−１〜３０４−４の上に形成される。 Turning to FIG. 2 to FIG. 9, an example of the structure of each of the antennas 206-1 to 206-4 (indicated later by 206) can be seen. The antenna 206 is generally formed on the substrate 302 and may be configured to operate (for example) at 160 GHz. At this example operating frequency, the area occupied by the antenna (as illustrated in FIGS. 2-9) may be 1120 μm × 1120 μm. Extending through the substrate 302 are bond pads 304-1 through 304-4 (which may be formed of copper, for example). Bond pads 304-1 and 304-4 generally operate as ground terminals, and bond pads 304-2 and 304-3 are generally differential feed terminals (ie, communicated with RF circuit elements (ie, transceivers) on IC 106. , Positive and negative). These bond pads 304-1 through 304-4 are generally aligned with each other along a line that bisects the area occupied by the antenna 206. In addition, vias 306-1 to 306-4 (which may be formed of tungsten, for example) are formed on bond pads 304-1 to 304-4, respectively.

メタライゼーション層３０８（これは例えば銅又はアルミニウムで形成され得る）がその後、間に形成される層間誘電体（これは、テラヘルツ放射など、対象の周波数で放射に対してトランスペアレントである）を備えて形成されるように、基板３０２上に配置される。図示するように、このメタライゼーション層３０８は概して、領域４０２、４０４、及び４０６を含む。領域４０２は、ウィンドウ領域４０８を実質的に囲み、接地面を形成するように、それぞれ、ビア３０６−１及び３０６−４を介してボンドパッド３０４−１及び３０４−４と電気的に接触している。領域４０４及び４０６は、ビア３０６−２及び３０６−３を介して、それぞれ、ボンドパッド３０４−２及び３０４−３と電気的に接触している概して円形の領域（これは、約１８０μｍの直径を有し得、ウィンドウ領域４０８の端部から約４０μｍずらされ得る）である。ビア３１０−１及び３１０−２（これも例えばタングステンで形成され得る）は、それぞれ、領域４０４及び４０６の上に形成され得、ビア３１０−３〜３１０−１８（これらも、例えば、タングステンで形成され得、互いから約２２０μｍ分離され得る）は、領域４０２上に「ビアウォール」を実質的に形成するようにその周辺に沿って配置される。 A metallization layer 308 (which can be formed, for example, of copper or aluminum) is then provided with an interlayer dielectric (which is transparent to radiation at the frequency of interest, such as terahertz radiation) formed therebetween. Arranged on the substrate 302 to be formed. As shown, this metallization layer 308 generally includes regions 402, 404, and 406. Region 402 is in electrical contact with bond pads 304-1 and 304-4 via vias 306-1 and 306-4, respectively, to substantially surround window region 408 and form a ground plane. Yes. Regions 404 and 406 are generally circular regions in electrical contact with bond pads 304-2 and 304-3 via vias 306-2 and 306-3, respectively (this has a diameter of about 180 μm). And can be offset from the edge of the window region 408 by about 40 μm). Vias 310-1 and 310-2 (which can also be formed of tungsten, for example) can be formed over regions 404 and 406, respectively, and vias 310-3 to 310-18 (which are also formed of, for example, tungsten). Can be separated from each other by about 220 μm) and are arranged along their perimeter to substantially form a “via wall” on the region 402.

図８及び図９に示すように、メタライゼーション層３１２が、間に形成される層間誘電体を備えて、メタライゼーション層３０８の上に配置される。メタライゼーション層３１２（これは例えば銅又はアルミニウムで形成され得る）の領域５０２が、ウィンドウ領域５１０を実質的に囲み、アンテナ２０６が占めるエリア（これは、約１８１μｍの幅を有し得る）の周辺まで延びる。領域５０４が、ウィンドウ領域５１０を二分するように、且つ、領域５０６及び５０８を交差するように（即ち、領域５０２から約３３０μｍで）ウィンドウ領域５１０にわたって延びる（及び領域５０２と電気的に接触している）。領域５０８及び５０６（これらは、ウィンドウ領域５１０内に位置する）は、領域４０４及び４０６と概して同一の広がりを有し（即ち、約１８０μｍの直径を有し）、領域５０４及び領域４０４及び４０６と電気的に接触している。そのため、図示するように、ウィンドウ領域５０６は、ウィンドウ領域４０８と部分的に整合される。 As shown in FIGS. 8 and 9, a metallization layer 312 is disposed over the metallization layer 308 with an interlayer dielectric formed therebetween. A region 502 of the metallization layer 312 (which can be formed of, for example, copper or aluminum) substantially surrounds the window region 510 and is around the area occupied by the antenna 206 (which can have a width of about 181 μm) Extend to. Region 504 extends across window region 510 (and in electrical contact with region 502) to bisect window region 510 and intersect regions 506 and 508 (ie, about 330 μm from region 502). ) Regions 508 and 506 (which are located within window region 510) are generally coextensive with regions 404 and 406 (ie have a diameter of about 180 μm), and regions 504 and 404 and 406 They are in electrical contact. As such, the window region 506 is partially aligned with the window region 408, as shown.

例えば、１６０ＧＨｚで放射を生成するために、この構造を用いることにより、図１０に示す放射パターンが生成され得る。この例に示すように、これは、５．３６ｄＢｉの指向性、４．１８ｄＢｉの利得、及び７２％の効率のワイドビームである。また、システム１００の配置のため、放射がＰＣＢ１０２から離れて伝播し、そのため、寄生放射及びＰＣＢトランスからの干渉が低減され、パッケージ基板３０２に対する接地へのクォーター波長ラインを有するループアンテナ（即ち、アンテナ２０６）が、静電気放電又はＥＳＤに対する低減された感度を有するようになる。また、アンテナ利得を増大させるためリフレクタ及びディレクタ（ｄｉｒｅｃｔｏｒｓ）を形成するために、アンテナパッケージ１０４及びＩＣ１０６両方において金属層を用いることができる。 For example, using this structure to generate radiation at 160 GHz, the radiation pattern shown in FIG. 10 can be generated. As shown in this example, this is a wide beam with 5.36 dBi directivity, 4.18 dBi gain, and 72% efficiency. Also, due to the arrangement of the system 100, radiation propagates away from the PCB 102, so that parasitic radiation and interference from the PCB transformer are reduced, and a loop antenna with a quarter wavelength line to ground relative to the package substrate 302 (ie, antenna 206) will have reduced sensitivity to electrostatic discharge or ESD. Also, a metal layer can be used in both antenna package 104 and IC 106 to form reflectors and directors to increase antenna gain.

当業者であれば、本発明の特許請求の範囲内で、説明した例示の実施例に変形が成され得ること、及び多くの他の実施例が可能であることが分かるであろう。 Those skilled in the art will appreciate that variations can be made to the described exemplary embodiments and that many other embodiments are possible within the scope of the claims of the present invention.

Claims

A substrate having a first feed terminal, a second feed terminal, and a ground terminal , wherein the ground terminal includes a first ground terminal, the substrate includes a second ground terminal, and the first The substrate, wherein the feed terminal, the second feed terminal, the first ground terminal, and the second ground terminal are substantially aligned ;
A first metallization layer disposed on said substrate,
A first window region that is substantially rectangular ;
A first conductive region disposed over the first feed terminal and in electrical contact with the first feed terminal, wherein the first conductive region is substantially circular and is within the first window region; The first conductive region disposed in
A second conductive region disposed over the second feed terminal and in electrical contact with the second feed terminal, wherein the second conductive region is substantially circular and within the first window region The second conductive region disposed in
A third conductive region disposed over the ground terminal and in electrical contact with the ground terminal, wherein the third conductive region substantially surrounds the first window region; ,
The including,
The first metallization layer;
An electrical interface with the first, second and third conductive regions of the first metallization layer is disposed on the first, second and third conductive regions of the first metallization layer. A second metallization layer in contact with the second metallization layer, the second metallization layer comprising a second window region at least partially aligned with the first window region ;
A first via extending between the first ground terminal and the third conductive region;
A second via extending between the second ground terminal and the third conductive region;
A third via extending between the first feed terminal and the first conductive region;
A fourth via extending between the second feed terminal and the second conductive region;
A device comprising:
The second metallization layer comprises:
A fourth conductive region, substantially surrounding the second window conductive region and in electrical contact with the third conductive region;
A fifth conductive region that bisects the second window region and is in electrical contact with the fourth conductive region;
A sixth conductive region disposed on the first conductive region, having a generally same extent as the first conductive region, and the first and fifth conductive regions; The sixth conductive region in electrical contact;
A seventh conductive region, disposed on the second conductive region, having a generally same extent as the second conductive region, and the second and fifth conductive regions; The seventh conductive region in electrical contact;
Further comprising an apparatus.

The apparatus of claim 1 , comprising:
A set of fifth vias extending between the third and fourth conductive regions,
A sixth vias extending between the first and sixth conductive region of
A seventh vias extending between said second and seventh conductive regions of
Further comprising an apparatus.

The apparatus of claim 2 , comprising:
The first is feed terminal and the second feed terminal and the first ground terminal and said second ground terminal which is a bond pad, device.

An integrated circuit (IC),
And antenna package,
The A including equipment,
The IC is
Radio frequency (RF) circuit elements;
A first bond pad coupled to the RF circuit element;
A second bond pad coupled to the RF circuit element;
A third bond pad coupled to the RF circuit element and coupled to ground;
Have
The antenna package is
A substrate,
A fourth bond pad located on the substrate and in electrical contact with the first bond pad;
A fifth bond pad located on the substrate and in electrical contact with the second bond pad;
A sixth bond pad located on the substrate and in electrical contact with the third bond pad;
A first metallization layer disposed on the substrate;
A second metallization layer;
Have
The first metallization layer comprises:
A first window area;
A first conductive region disposed over the fourth bond pad and in electrical contact with the fourth bond pad, wherein the first conductive region is substantially circular and is within the first window region; The first conductive region disposed in
A second conductive region disposed over the fifth bond pad and in electrical contact with the fifth bond pad, wherein the second conductive region is substantially circular and is within the first window region; The second conductive region disposed in
A third conductive region disposed on the sixth bond pad and in electrical contact with the sixth bond pad, substantially surrounding the first window region; 3 conductive regions;
Including
The second metallization layer is disposed over the first, second, and third conductive regions of the first metallization layer, and the first, second of the first metallization layer. And a second window region in electrical contact with the third conductive region and at least partially aligned with the first window region.

The apparatus according to claim 4 , comprising:
An antenna package further comprising a seventh bond pad, wherein the fourth, fifth, sixth and seventh bond pads are substantially aligned;
The IC further includes an eighth bond pad coupled to the RF circuit element and coupled to ground;
The device wherein the seventh bond pad is in electrical contact with the eighth bond pad.

The apparatus of claim 5 , comprising:
The apparatus, wherein the first window region is substantially rectangular.

The apparatus according to claim 6 , comprising:
A first via extending between the sixth bonding pad and the third conductive region of
A second via extending between the seventh bond pad and the third conductive region of
A third via extending between said fourth bond pad and the first conductive region,
A fourth via extending between said fifth bonding pad and the second conductive region,
Further comprising an apparatus.

The apparatus according to claim 7 , comprising:
The second metallization layer comprises:
A fourth conductive region, said second window conductive region substantially surrounds, the third conductive region and in electrical contact, said fourth conductive region,
A fifth conductive region that bisects the second window conductive region and is in electrical contact with the fourth conductive region ; and
A sixth conductive region disposed on the first conductive region, having a generally same extent as the first conductive region, and the first and fifth conductive regions; in electrical contact, and the sixth conductive region of
A seventh conductive region, disposed on the second conductive region, having a generally same extent as the second conductive region, and the second and fifth conductive regions; is in electrical contact, said seventh conductive region of
Further comprising an apparatus.

The apparatus according to claim 8 , comprising:
A set of fifth vias extending between the third and fourth conductive regions,
A sixth vias extending between the first and sixth conductive region of
A seventh vias extending between said second and seventh conductive regions of
Further comprising an apparatus.

An integrated circuit (IC),
And antenna package,
The A including equipment,
The IC is
A plurality of RF transceivers;
Multiple sets of bond pads,
Have
Each set of bond pads is associated with at least one of the RF transceivers;
Each set of bond pads
A first bond pad coupled to the associated RF transceiver;
A second bond pad coupled to the associated RF transceiver;
A third bond pad coupled to its associated RF transceiver and coupled to ground;
A fourth bond pad coupled to its associated RF transceiver and coupled to ground;
Including
The antenna package is
A substrate,
An array of antennas,
A high impedance surface (HIS) disposed on the substrate and substantially surrounding the array of antennas;
Have
Each antenna is associated with at least one of the RF transceivers;
Each antenna is
A fifth bond pad located on the substrate and in electrical contact with its associated first bond pad;
A sixth bond pad located on the substrate and in electrical contact with its associated second bond pad;
A seventh bond pad located on the substrate and in electrical contact with its associated third bond pad;
An eighth bond pad located on the substrate and in electrical contact with its associated third bond pad, the fifth, sixth, seventh And the eighth bond pad, wherein the eighth bond pad is substantially aligned;
A first metallization layer disposed on the substrate;
A second metallization layer;
Including
The first metallization layer comprises:
A first window area;
A first conductive region disposed on the fifth bond pad, in electrical contact with the fifth bond pad, substantially circular, and the first window region; The first conductive region disposed within;
A second conductive region disposed on the sixth bond pad, in electrical contact with the sixth bond pad, substantially circular, and the second conductive region The second conductive region, wherein a region is disposed within the first window region;
A third conductive region disposed on the seventh and eighth bond pads and in electrical contact with the seventh and eighth bond pads; Said third conductive region substantially surrounding;
Including
The second metallization layer is disposed over the first, second, and third conductive regions of the first metallization layer, and the first, second of the first metallization layer. And in electrical contact with the third conductive region,
It said second second window region including metallization layer is at least partially aligned with the first window area, device.

The apparatus of claim 10, comprising:
The apparatus, wherein the first window region is substantially rectangular.

The apparatus of claim 11, comprising:
A first via extending between the first ground terminal and the third conductive region;
A second via extending between the second ground terminal and the third conductive region;
A third via extending between the first feed terminal and the first conductive region;
A fourth via extending between the second feed terminal and the second conductive region;
Further comprising an apparatus.

The apparatus according to claim 12, comprising:
The second metallization layer comprises:
A fourth conductive region, substantially surrounding the second window conductive region and in electrical contact with the third conductive region;
A fifth conductive region that bisects the second window region and is in electrical contact with the fourth conductive region;
A sixth conductive region disposed on the first conductive region, having a generally same extent as the first conductive region, and the first and fifth conductive regions; The sixth conductive region in electrical contact;
A seventh conductive region, disposed on the second conductive region, having a generally same extent as the second conductive region, and the second and fifth conductive regions; The seventh conductive region in electrical contact;
Further comprising an apparatus.

14. The device according to claim 13, wherein
A fifth set of vias extending between the third and fourth conductive regions;
A sixth via extending between the first and sixth conductive regions;
A seventh via extending between the second and seventh conductive regions;
Further comprising an apparatus.