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JP5958765B2 - 太陽電池セルの製造方法および太陽電池モジュールの製造方法 - Google Patents

太陽電池セルの製造方法および太陽電池モジュールの製造方法 Download PDF

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Publication number
JP5958765B2
JP5958765B2 JP2012531914A JP2012531914A JP5958765B2 JP 5958765 B2 JP5958765 B2 JP 5958765B2 JP 2012531914 A JP2012531914 A JP 2012531914A JP 2012531914 A JP2012531914 A JP 2012531914A JP 5958765 B2 JP5958765 B2 JP 5958765B2
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Japan
Prior art keywords
layer
resin
insulating layer
forming
solar cell
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Expired - Fee Related
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JP2012531914A
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English (en)
Japanese (ja)
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JPWO2012029847A1 (ja
Inventor
西田　豊三
豊三 西田
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP2012531914A 2010-08-31 2011-08-31 太陽電池セルの製造方法および太陽電池モジュールの製造方法 Expired - Fee Related JP5958765B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010195031 2010-08-31
JP2010195031 2010-08-31
PCT/JP2011/069761 WO2012029847A1 (fr) 2010-08-31 2011-08-31 Procédé de production d'une cellule photovoltaïque et procédé de production d'un module photovoltaïque

Publications (2)

Publication Number Publication Date
JPWO2012029847A1 JPWO2012029847A1 (ja) 2013-10-31
JP5958765B2 true JP5958765B2 (ja) 2016-08-02

Family

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JP2012531914A Expired - Fee Related JP5958765B2 (ja) 2010-08-31 2011-08-31 太陽電池セルの製造方法および太陽電池モジュールの製造方法

Country Status (2)

Country Link
JP (1) JP5958765B2 (fr)
WO (1) WO2012029847A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5891375B2 (ja) * 2011-07-29 2016-03-23 パナソニックＩｐマネジメント株式会社 光起電力モジュール
JP5906459B2 (ja) * 2012-03-30 2016-04-20 パナソニックＩｐマネジメント株式会社 太陽電池及びその製造方法
JP5425349B1 (ja) 2012-04-25 2014-02-26 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
FR2994767A1 (fr) * 2012-08-23 2014-02-28 Commissariat Energie Atomique Procede de realisation de contacts electriques d'un dispositif semi-conducteur
JP2014103259A (ja) * 2012-11-20 2014-06-05 Mitsubishi Electric Corp 太陽電池、太陽電池モジュールおよびその製造方法
JP6196031B2 (ja) * 2012-11-27 2017-09-13 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP6097068B2 (ja) * 2012-12-20 2017-03-15 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP5705389B1 (ja) 2013-05-29 2015-04-22 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュールおよびその製造方法
JP6184263B2 (ja) * 2013-09-11 2017-08-23 三菱電機株式会社 太陽電池モジュールの製造方法
JP2015073058A (ja) * 2013-10-04 2015-04-16 長州産業株式会社 光発電素子
JP2015185743A (ja) * 2014-03-25 2015-10-22 シャープ株式会社 光電変換素子
WO2016068051A1 (fr) * 2014-10-31 2016-05-06 シャープ株式会社 Élément de conversion photoélectrique, et module de cellules solaires ainsi que système de génération photovoltaïque équipés de celui-ci
KR101619831B1 (ko) 2014-12-17 2016-05-11 한국에너지기술연구원 태양 전지 및 이의 제조 방법
JP6688230B2 (ja) 2015-01-07 2020-04-28 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
WO2018056143A1 (fr) * 2016-09-23 2018-03-29 昭和電工株式会社 Procédé de fabrication d'élément de batterie solaire
JPWO2018056142A1 (ja) * 2016-09-23 2019-07-04 石原ケミカル株式会社 太陽電池セルの製造方法
CN110392934B (zh) * 2017-03-31 2022-07-19 株式会社钟化 光电转换元件以及光电转换元件的制造方法
WO2019188133A1 (fr) * 2018-03-30 2019-10-03 株式会社カネカ Cellule solaire, module de cellule solaire et procédé de fabrication de cellule solaire

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010790A (ja) * 1983-06-30 1985-01-19 Matsushita Electric Works Ltd 太陽電池の電極形成方法
JPH02231783A (ja) * 1989-03-03 1990-09-13 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JPH0786554A (ja) * 1993-09-14 1995-03-31 Nippondenso Co Ltd 受発光素子
JP2000058885A (ja) * 1998-08-03 2000-02-25 Sanyo Electric Co Ltd 太陽電池及びその製造方法
JP2001267597A (ja) * 2000-03-15 2001-09-28 Sharp Corp 光電変換素子
JP2004153214A (ja) * 2002-11-01 2004-05-27 Fuji Photo Film Co Ltd 半導体レーザおよびその半導体レーザを用いたレーザ発光装置
JP2004200328A (ja) * 2002-12-17 2004-07-15 Nec Corp 半導体素子および半導体受光素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010790A (ja) * 1983-06-30 1985-01-19 Matsushita Electric Works Ltd 太陽電池の電極形成方法
JPH02231783A (ja) * 1989-03-03 1990-09-13 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JPH0786554A (ja) * 1993-09-14 1995-03-31 Nippondenso Co Ltd 受発光素子
JP2000058885A (ja) * 1998-08-03 2000-02-25 Sanyo Electric Co Ltd 太陽電池及びその製造方法
JP2001267597A (ja) * 2000-03-15 2001-09-28 Sharp Corp 光電変換素子
JP2004153214A (ja) * 2002-11-01 2004-05-27 Fuji Photo Film Co Ltd 半導体レーザおよびその半導体レーザを用いたレーザ発光装置
JP2004200328A (ja) * 2002-12-17 2004-07-15 Nec Corp 半導体素子および半導体受光素子

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JPWO2012029847A1 (ja) 2013-10-31

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