JP5774219B2 - 化学的に類似している基材の仮接着 - Google Patents
化学的に類似している基材の仮接着 Download PDFInfo
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- JP5774219B2 JP5774219B2 JP2014520611A JP2014520611A JP5774219B2 JP 5774219 B2 JP5774219 B2 JP 5774219B2 JP 2014520611 A JP2014520611 A JP 2014520611A JP 2014520611 A JP2014520611 A JP 2014520611A JP 5774219 B2 JP5774219 B2 JP 5774219B2
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- Prior art keywords
- adhesive
- substrate
- adhesion
- silicon
- acid
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- 239000000758 substrate Substances 0.000 title claims description 58
- 230000001070 adhesive effect Effects 0.000 claims description 83
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- 239000003795 chemical substances by application Substances 0.000 claims description 29
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- 238000000034 method Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 12
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- 239000002904 solvent Substances 0.000 claims description 12
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- 238000005259 measurement Methods 0.000 claims description 2
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- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CUMCLKHSZZGALD-UHFFFAOYSA-N methyl-oxo-(3,3,3-trifluoropropyl)silane Chemical compound C[Si](=O)CCC(F)(F)F CUMCLKHSZZGALD-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000002819 montanyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- YWWVWXASSLXJHU-WAYWQWQTSA-N myristoleic acid Chemical compound CCCC\C=C/CCCCCCCC(O)=O YWWVWXASSLXJHU-WAYWQWQTSA-N 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- KSCKTBJJRVPGKM-UHFFFAOYSA-N octan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCCCCCC[O-].CCCCCCCC[O-].CCCCCCCC[O-].CCCCCCCC[O-] KSCKTBJJRVPGKM-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000011242 organic-inorganic particle Substances 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- 150000003002 phosphanes Chemical class 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000006069 physical mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003058 platinum compounds Chemical group 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000438 poly[methyl(3,3,3-trifluoropropyl)siloxane] polymer Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920005594 polymer fiber Polymers 0.000 description 1
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- AXLMPTNTPOWPLT-UHFFFAOYSA-N prop-2-enyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OCC=C AXLMPTNTPOWPLT-UHFFFAOYSA-N 0.000 description 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 1
- KVIKMJYUMZPZFU-UHFFFAOYSA-N propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)O KVIKMJYUMZPZFU-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- QZZGJDVWLFXDLK-UHFFFAOYSA-N tetracosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(O)=O QZZGJDVWLFXDLK-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000003017 thermal stabilizer Substances 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- CUXYLFPMQMFGPL-UYWAGRGNSA-N trichosanic acid Natural products CCCCC=C/C=C/C=CCCCCCCCC(=O)O CUXYLFPMQMFGPL-UYWAGRGNSA-N 0.000 description 1
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- ASEGJSMHCHEQSA-UHFFFAOYSA-N trimethoxy(undec-10-enyl)silane Chemical compound CO[Si](OC)(OC)CCCCCCCCCC=C ASEGJSMHCHEQSA-UHFFFAOYSA-N 0.000 description 1
- UOKUUKOEIMCYAI-UHFFFAOYSA-N trimethoxysilylmethyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)COC(=O)C(C)=C UOKUUKOEIMCYAI-UHFFFAOYSA-N 0.000 description 1
- OVFFWUHKSNMAOJ-UHFFFAOYSA-N tris(ethenyl)-[ethenyl(dimethyl)silyl]oxysilane Chemical compound C=C[Si](C)(C)O[Si](C=C)(C=C)C=C OVFFWUHKSNMAOJ-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229960002703 undecylenic acid Drugs 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/76—Making non-permanent or releasable joints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Laminated Bodies (AREA)
Description
該接着剤は、接着促進剤または剥離剤またはこの組合せを含む群から選択される少なくとも1種類の接着調節剤(A)を含むことを特徴とする架橋性シリコーン組成物であり、
ここで、該接着調節剤(A)は、硬化した該接着剤と一方の基材間の接着力または剥離強度が硬化した該接着剤と他方の基材間の接着力よりも、DIN ISO 813による測定時、少なくとも0.5N/mm大きくなるような量で存在しており、硬化した該接着剤は、該結合を分離したとき、一方の基材のみから該領域の少なくとも80%において接着分離され得るものとする。
好ましくは0.01から10wt%、より好ましくは0.1から5重量パーセント、より好ましくは0.5から3重量パーセントの量の接着調節剤(A)
を含むものである。
ジフェニルシロキサン−ジメチルシロキサンコポリマー:CAS[68083−14−7]
フェニルメチルシロキサン−ジメチルシロキサンコポリマー:CAS[63148−52−7]
フェニルメチルシロキサンホモポリマー:CAS[9005−12−3]
フェニルメチルシロキサン−ジフェニルシロキサンコポリマー
1,1,5,5−テトラフェニル−1,3,3,5−テトラメチルトリシロキサン:CAS[3982−82−9]
1,1,3,5,5−ペンタフェニル−1,3,5−トリメチルトリシロキサン:CAS 3390−61−2
アルキルメチルシロキサン−アリールアルキルメチルシロキサンコポリマー:CAS[68037−77−4]、[68952−01−2]、[68440−89−1]、[68037−76−3]
ビニル末端ジフェニルシロキサン−ジメチルシロキサンコポリマー:CAS[68951−96−2]
ビニル末端ポリフェニルメチルシロキサン:CAS[225927−21−9]
ビニルフェニルメチル末端ビニルフェニル−フェニルメチルシロキサンコポリマー:CAS[8027−82−1]
ポリエチルハイドロジェンシロキサン:CAS[24979−95−1]
メチルハイドロジェン−フェニルメチルシロキサンコポリマー、SiH末端型:CAS[115487−49−5]、
メチルハイドロジェン−フェニルメチルシロキサンコポリマー、Me3−Si末端型
メチルハイドロジェン−フェニルメチル−ジメチルシロキサンコポリマー
シラノール末端ジフェニルシロキサン−ジメチルシロキサンコポリマー:CAS[68951−93−9]、[68083−14−7]
シラノール末端ポリジフェニルシロキサン:CAS[63148−59−4]
である。
ポリ(3,3,3−トリフルオロプロピルメチルシロキサン):CAS[63148−56−1]
3,3,3−トリフルオロプロピルメチルシロキサン−ジメチルシロキサンコポリマー:CAS[115361−68−7]
ビス(トリデカフルオロオクチル)テトラメチルシロキサン:CAS[71363−70−7]
ビニル末端トリフルオロプロピルメチルシロキサン−ジメチルシロキサンコポリマー:CAS[68951−98−4]
ビニル末端ジエチルシロキサン−ジメチルシロキサンコポリマー
3,3,3−トリフルオロプロピルメチルシロキサン−メチルハイドロジェンシロキサンコポリマー
3,3,3−トリフルオロプロピルメチルシロキサン−メチルハイドロジェンシロキサン−ジメチルシロキサンコポリマー
シラノール末端ポリトリフルオロプロピルメチルシロキサン:CAS[68607−77−2]
である。
a)接着剤を基材1に適用し、
b)10秒間から120分間の待ち時間が観察され、
c)任意の存在している溶剤を、前述の待ち時間b)の間に除去し、
d)基材2を該接着剤と接触させ、
e)該接着剤の硬化を行い、
f)基材1および/または基材2に対するさらなる加工工程の実施、
g)該2つの基材の一方に硬化した該接着剤を残したままでの両基材の分離
を特徴とし、
該接着剤が、接着促進剤または剥離剤またはこの組合せを含む群から選択される少なくとも1種類の接着調節剤(A)を含むことを特徴とする架橋性シリコーン組成物であり、
ここで、該接着調節剤(A)は、硬化した該接着剤と一方の基材間の接着力が硬化した該接着剤と他方の基材間の接着力よりも、DIN ISO 813による測定時、少なくとも0.5N/mm大きくなるような量で存在しており、硬化した該接着剤は、該結合を分離したとき、一方の基材のみから該領域の少なくとも80%において接着分離され得るものとする、
化学的に類似している2つの基材の仮接着結合のための方法である。
R エラストマー内の分離(凝集破壊)
D エラストマーと支持体プレート間の分離(領域の少なくとも80%における接着破壊)
以下の略号を使用する:
Cat. 白金触媒
Ex. 実施例
No. 番号
ρS シリコーン組成物の密度
ρHR 接着調節剤の密度
PDMS ポリジメチルシロキサン
AR 接着調節剤
n.i. 本発明でない
シリコーン基剤組成物1
約220の平均鎖長を有する100部のビニル末端PDMS
ポリマーを充分に架橋し得る3部のSiH架橋剤
100ppmの1−エチニルシクロヘキサノール
10ppmの白金触媒(金属ベース)
密度:0.97g/cm3
シリコーン基剤組成物2
約220の平均鎖長を有する100部のビニル末端PDMS
約300m2/gのBET表面積を有する40部の予備疎水性化ヒュームドシリカ
ポリマーを充分に架橋し得る3部のSiH架橋剤
100ppmの1−エチニルシクロヘキサノール
10ppmの白金触媒(金属ベース)
密度:1.12g/cm3
シリコーン基剤組成物3
約220の平均鎖長を有する100部のビニル末端PDMS
25μmの平均粒子直径を有する50部の球状酸化アルミニウム
ポリマーを充分に架橋し得る3部のSiH架橋剤
100ppmの1−エチニルシクロヘキサノール
10ppmの白金触媒(金属ベース)
密度:0.97g/cm3(酸化Alは無視)
シリコーン基剤組成物4
100部のビニル基含有MQ樹脂
約100の平均鎖長を有する30部のビニル末端PDMS
ポリマーを充分に架橋し得る3部のSiH架橋剤
100ppmの1−エチニルシクロヘキサノール
10ppmの白金触媒(金属ベース)
密度:1.08g/cm3
シリコーン基剤組成物5
100部のビニル基含有MQ樹脂
約100の平均鎖長を有する50部のビニル末端PDMS
ポリマーを充分に架橋し得る7部のSiH架橋剤
100ppmの1−エチニルシクロヘキサノール
10ppmの白金触媒(金属ベース)
密度:1.07g/cm3
Claims (3)
- シリコン支持体へのシリコンウェハの仮接着結合のための接着剤の使用であって、
前記接着剤が、シリコーンベース組成物および少なくとも0.01から10wt%の、10から60個の炭素原子を含む脂肪酸エステルの群から選択される剥離剤を含むことを特徴とする架橋性シリコーン組成物であり、
但し、
前記剥離剤の密度(ρ HR )と前記シリコーンベース組成物の密度(ρ s )との差は少なくとも0.10g/cm3 であり、この結果、硬化した接着剤のシリコン支持体への接着力と硬化した接着剤のシリコンウェハへの接着力との差は、DIN ISO 813による測定時、少なくとも0.5N/mmであり、
ρ HR がρ s よりも小さい場合、シリコンウェハとシリコン支持体のうち硬化した接着剤よりも上に配置された上面基材の接着が低減され、
ρ HR がρ s よりも大きい場合、シリコンウェハとシリコン支持体の他方である下側基材の接着が低減され、
硬化した接着剤が、結合の分離時、領域の少なくとも80%において前記シリコンウェハまたはシリコン支持体のみから分離され得る、
使用。 - 架橋性シリコーン組成物が、縮合架橋型、付加架橋型および過酸化物架橋型のシリコーン組成物を含む群から選択される、請求項1に記載の接着剤の使用。
- シリコン支持体へのシリコンウェハの仮接着結合のための方法であって、
a)請求項1または2に記載の接着剤を基材1としてのシリコンウェハに適用し、
b)10秒間から120分間の待ち時間がおかれ、
c)任意の存在している溶剤を、前述の待ち時間b)の間に除去し、
d)基材2としてのシリコン支持体を接着剤と接触させ、
e)接着剤の硬化を行い、
f)基材1としての該シリコンウェハおよび/または基材2としてのシリコン支持体に対するさらなる加工工程を実施し、
g)基材1および2の一方上に硬化した接着剤を残したままでシリコンウェハとシリコン支持体を分離すること
を特徴とする、
方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011079687.8 | 2011-07-22 | ||
| DE102011079687A DE102011079687A1 (de) | 2011-07-22 | 2011-07-22 | Temporäre Verklebung von chemisch ähnlichen Substraten |
| PCT/EP2012/063601 WO2013013986A2 (de) | 2011-07-22 | 2012-07-11 | Temporäre verklebung von chemisch ähnlichen substraten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014525953A JP2014525953A (ja) | 2014-10-02 |
| JP5774219B2 true JP5774219B2 (ja) | 2015-09-09 |
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| JP2014520611A Active JP5774219B2 (ja) | 2011-07-22 | 2012-07-11 | 化学的に類似している基材の仮接着 |
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|---|---|
| US (1) | US9034139B2 (ja) |
| EP (1) | EP2734594B1 (ja) |
| JP (1) | JP5774219B2 (ja) |
| KR (1) | KR101606626B1 (ja) |
| CN (1) | CN103703088B (ja) |
| DE (1) | DE102011079687A1 (ja) |
| WO (1) | WO2013013986A2 (ja) |
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| JP6378516B2 (ja) * | 2014-03-27 | 2018-08-22 | 日東電工株式会社 | シリコーン系粘着テープ |
| TWI661935B (zh) * | 2014-06-13 | 2019-06-11 | 日商富士軟片股份有限公司 | 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體 |
| CN104130738B (zh) * | 2014-07-08 | 2017-01-04 | 浙江汇杰有机硅股份有限公司 | 一种对不锈钢粘接良好的酸性硅酮密封胶及其制备方法 |
| US10141216B2 (en) | 2014-10-22 | 2018-11-27 | Promerus, Llc | Room temperature debondable and thermally curable compositions |
| WO2016101129A1 (en) * | 2014-12-23 | 2016-06-30 | Henkel (China) Company Limited | 1k high temperature debondable adhesive |
| US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
| JP6437108B2 (ja) * | 2015-05-11 | 2018-12-12 | 富士フイルム株式会社 | 仮止め接着剤、接着フィルム、接着性支持体および積層体 |
| JP6589766B2 (ja) * | 2015-08-18 | 2019-10-16 | 信越化学工業株式会社 | ウエハ加工用接着材、ウエハ積層体及び薄型ウエハの製造方法 |
| SG11201802510SA (en) * | 2015-10-29 | 2018-04-27 | Toray Industries | Laminate film for temporary bonding, methods for producing substrate workpiece and laminate substrate workpiece using the laminate film for temporary bonding, and method for producing semiconductor device using the same |
| CN108699421B (zh) * | 2016-02-23 | 2021-10-29 | 美国陶氏有机硅公司 | 选择性粘附硅橡胶 |
| EP3477685A4 (en) * | 2016-06-22 | 2020-07-01 | Nissan Chemical Corporation | POLYDIMETHYLSILOXANE ADHESIVE |
| EP3636724B1 (en) * | 2017-05-24 | 2024-08-28 | Nissan Chemical Corporation | Temporary adhesive containing epoxy-modified polysiloxane |
| EP3651186B1 (en) * | 2017-07-06 | 2025-11-05 | Nissan Chemical Corporation | Temporary adhesive agent containing phenyl-group-containing polysiloxane |
| JP6886439B2 (ja) * | 2018-08-07 | 2021-06-16 | 日本特殊陶業株式会社 | 複合部材および接着剤組成物 |
| JP7460963B2 (ja) * | 2018-11-28 | 2024-04-03 | 日産化学株式会社 | 接着剤組成物、積層体及び積層体の製造方法並びに半導体形成基板を薄化する方法 |
| KR102874851B1 (ko) * | 2019-12-02 | 2025-10-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 웨이퍼 가공용 가접착제, 웨이퍼 적층체 및 박형 웨이퍼의 제조 방법 |
| JP2023520529A (ja) * | 2020-04-02 | 2023-05-17 | ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 金属アルコキシド触媒及び酸官能性ポリマーを含むシランベースのコーティング組成物 |
| CN115485814A (zh) * | 2020-04-30 | 2022-12-16 | 信越化学工业株式会社 | 晶片加工用临时粘接剂、晶片层叠体以及薄型晶片的制造方法 |
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-
2011
- 2011-07-22 DE DE102011079687A patent/DE102011079687A1/de not_active Withdrawn
-
2012
- 2012-07-11 KR KR1020137035080A patent/KR101606626B1/ko active Active
- 2012-07-11 WO PCT/EP2012/063601 patent/WO2013013986A2/de not_active Ceased
- 2012-07-11 US US14/233,071 patent/US9034139B2/en active Active
- 2012-07-11 JP JP2014520611A patent/JP5774219B2/ja active Active
- 2012-07-11 EP EP12733735.0A patent/EP2734594B1/de not_active Not-in-force
- 2012-07-11 CN CN201280036421.9A patent/CN103703088B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2734594B1 (de) | 2016-04-27 |
| JP2014525953A (ja) | 2014-10-02 |
| WO2013013986A2 (de) | 2013-01-31 |
| KR20140019450A (ko) | 2014-02-14 |
| DE102011079687A1 (de) | 2013-01-24 |
| CN103703088A (zh) | 2014-04-02 |
| CN103703088B (zh) | 2015-10-14 |
| EP2734594A2 (de) | 2014-05-28 |
| US9034139B2 (en) | 2015-05-19 |
| US20140150972A1 (en) | 2014-06-05 |
| KR101606626B1 (ko) | 2016-03-25 |
| WO2013013986A3 (de) | 2013-06-13 |
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