JP5621663B2 - Semiconductor encapsulating resin composition, semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a resin composition for encapsulating a semiconductor, a semiconductor device, and a method for producing the same.

  In a composition containing inorganic particles, a resin and a curing agent thereof, it is important to uniformly mix each component in a predetermined ratio in the composition. There exists a thing of patent document 1 as a technique regarding such a composition. This document describes a method for producing an epoxy resin composition containing an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst as essential components. Specifically, it is described that a spherical silica is surface-treated with an epoxy resin and / or a curing agent in advance, and the resulting treated silica is mixed with a curing catalyst or the like and kneaded to obtain an epoxy resin composition. . By performing the surface treatment in advance, the surface of the inorganic filler is uniformly coated with the resin, so that the generation of voids at the time of sealing the semiconductor device is very small and the moldability is excellent.

JP-A-8-27361

  However, in the technique described in Patent Document 1, the obtained treated silica and the curing catalyst are mixed and kneaded, and the treated silica and the curing catalyst component are separated in the composition or the composition is uneven. There was a case. Moreover, there is a possibility that the epoxy resin, the curing agent, and the curing catalyst may react during storage by mixing and kneading, and curing may proceed, and there is room for improvement in terms of storage stability.

According to the present invention,
A resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B) of the epoxy resin, and a curing accelerator (C),
Including functional particles having base particles composed of an inorganic material, a first layer covering the base particles, and a second layer covering the first layer;
Among the epoxy resin (A), the curing agent (B), and the curing accelerator (C), one or two components are included in the first layer, and the other components are the second component. A resin composition for semiconductor encapsulation contained in the layer is provided.

Moreover, according to this invention, the semiconductor device formed by sealing a semiconductor element using the resin composition for semiconductor sealing in the said this invention is provided.
Moreover, according to this invention, the manufacturing method of a semiconductor device including the process of sealing a semiconductor element using the resin composition for semiconductor sealing in the said this invention is provided.

In the present invention, the first and second layers are provided on the base particles, and the epoxy resin (A), the epoxy resin curing agent (B), and the curing accelerator (C) are respectively added to the first or second layer. Blend in one of the two layers. The epoxy resin (A), the epoxy resin curing agent (B) and the curing accelerator (C) are blended in the layer on the base particle, and at least one of the components (A) to (C) is added to another layer. As a result, each component is stably held on the particles in a predetermined composition. For this reason, since it can suppress effectively the preservability fall by the bias | inclination and dispersion | variation of the component in a composition, and the reaction between each component, manufacturing stability at the time of sealing a semiconductor element can be improved. it can.
In addition, when the components (A) to (C) are configured to cover the surface of the substrate particles, the composition excellent in tablet moldability even when the semiconductor sealing resin composition in the present invention is tablet-like. You can get things.

  In the present specification, the first and second layers cover the base particles and the first layer, respectively, covering at least a part of the surface of the base particles and the first layer. It means being. For this reason, it is not restricted to the aspect which covers the whole surface, For example, the aspect which covers the whole surface when it sees from a specific cross section, and the aspect which covers the specific area | region of the surface are also included. From the viewpoint of more effectively suppressing the variation in composition between particles, it is preferable to cover the entire surface when viewed from at least a specific cross section, and more preferable to cover the entire surface.

  Moreover, the first layer and the substrate particles may be in direct contact, or an intervening layer may be provided between them. The first layer and the second layer may also be in direct contact with each other, or an intervening layer may be provided between them.

  ADVANTAGE OF THE INVENTION According to this invention, the bias | inclination and dispersion | variation of the component in the resin composition for semiconductor sealing can be suppressed effectively.

It is sectional drawing which shows the structure of the resin composition for semiconductor sealing in embodiment. It is sectional drawing which shows the structure of the resin composition for semiconductor sealing in embodiment. It is sectional drawing which shows the structure of the semiconductor device in embodiment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same elements, and duplicate descriptions are omitted.

(First embodiment)
The resin composition for semiconductor encapsulation in the present embodiment is a composition containing an epoxy resin (A), an epoxy resin curing agent (B), and a curing accelerator (C), and from functional particles having a plurality of layers. Composed.

  Fig.1 (a) is sectional drawing which shows the structure of the functional particle in the resin composition for semiconductor sealing of this embodiment. The functional particle 100 shown in FIG. 1A includes base particles (inorganic particles 101) made of an inorganic material, a first layer 103 that covers the inorganic particles 101, and a first layer 103 that covers the first layer 103. A second layer 105 is included.

  In the example of FIG. 1A, the first layer 103 is in contact with the surface of the inorganic particle 101 and covers the entire surface of the inorganic particle 101. The second layer 105 is in contact with the first layer 103 and covers the entire surface of the first layer 103. Moreover, the 1st layer 103 and the 2nd layer 105 are provided by uniform thickness in the cross sectional view as a preferable aspect.

  FIG. 1A shows an example in which the interface between the inorganic particles 101 and the first layer 103 and the interface between the first layer 103 and the second layer 105 are both smooth. These interfaces may have irregularities.

  And any one or two components are contained in the 1st layer 103 among an epoxy resin (A), a hardening | curing agent (B), and a hardening accelerator (C), and another component is the 2nd layer 105. include. In addition, the 1st layer 103 and the 2nd layer 105 may contain components other than an epoxy resin (A), a hardening | curing agent (B), and a hardening accelerator (C), respectively.

Specifically, one of the epoxy resin (A), the curing agent (B), and the curing accelerator (C) is included in the first layer 103, and the other two are included in the second layer 105. It is.
Alternatively, any one of the epoxy resin (A), the curing agent (B), and the curing accelerator (C) is included in the first layer 103 and the other one is included in the second layer 105. .

  More specifically, among the epoxy resin (A), the curing agent (B) and the curing accelerator (C), the curing agent (B) and the curing accelerator (C) are contained in the same layer, and the epoxy resin (A ) Is included in another layer. Of the first layer 103 and the second layer 105, one of the functional particles 100 includes a curing agent (B) and a curing accelerator (C) and the other includes an epoxy resin (A). The storage stability of the filler comprising can be further improved. For example, deterioration over time when stored at 40 ° C. can be effectively suppressed.

  As another specific embodiment, among the epoxy resin (A), the curing agent (B), and the curing accelerator (C), the epoxy resin (A) and the curing agent (B) are included in the same layer, and the curing is accelerated. The agent (C) is included in another layer. Of the first layer 103 and the second layer 105, one of the functional particles 100 includes the epoxy resin (A) and the curing agent (B) and the other includes the curing accelerator (C). The storage stability of the resin composition for encapsulating semiconductors can be further improved. For example, deterioration over time when stored at 40 ° C. can be effectively suppressed.

  Of the first layer 103 and the second layer 105, the thickness of the layer containing the epoxy resin (A) is not particularly limited as long as it is a blending amount necessary for developing the curing reaction, but for example, 5 nm or more From the viewpoint of further improving productivity, the thickness is preferably 50 μm or less, preferably 5 μm or less.

  In addition, the thickness of the layer containing the curing agent (B) among the first layer 103 and the second layer 105 is not particularly limited as long as it is a blending amount necessary for developing the curing reaction. From the viewpoint of further improving productivity, the thickness is, for example, 50 μm or less, preferably 5 μm or less.

  In addition, the thickness of the layer containing the curing accelerator (C) among the first layer 103 and the second layer 105 is not particularly limited as long as it is a blending amount necessary for developing the curing reaction, For example, the thickness is 1 nm or more, preferably 5 nm or more, and it is not always necessary to form a uniform layer. However, from the viewpoint of further improving productivity, the thickness is, for example, 50 μm or less, preferably 5 μm or less.

  The resin composition for encapsulating a semiconductor in the present embodiment contains functional components 100 and known components and the like in the resin composition for encapsulating a semiconductor used as necessary. The functional particles 100 are uniformly dispersed as a filler in the composition. In the filler contained in the semiconductor sealing resin composition, a part of the first layer 103 and the second layer 105 may change in composition or may disappear.

  Hereinafter, the specific example of the component of the functional particle 100 which comprises the resin composition for semiconductor sealing is shown. As each component, one type may be used or a plurality of types may be used in combination.

First, the inorganic particles 101 will be described.
Examples of the material of the inorganic particles 101 include silica powder such as fused crushed silica powder, fused spherical silica powder, crystalline silica powder, and secondary agglomerated silica powder; alumina, silicon nitride, titanium white, aluminum hydroxide, talc, clay, mica And glass fiber.

Among these, from the viewpoint of mounting reliability of the semiconductor device, the inorganic particles 101 are preferably spherical particles made of one or more inorganic materials selected from the group consisting of silica, alumina, and silicon nitride. Of these inorganic materials, silica is particularly preferable.
From the viewpoint of mechanical strength, it is preferable that the inorganic particles 101 be fibrous particles made of a fiber material such as glass fiber. The inorganic particles 101 may be particles obtained by processing a nonwoven fabric such as a glass nonwoven fabric into particles.

  Moreover, there is no restriction | limiting in particular in the particle shape of the inorganic particle 101, For example, it can be set as spherical, fiber shape, needle shape, etc., such as a crushing shape, a substantially spherical shape, and a perfect spherical shape. The average particle diameter (d50) when the inorganic particles 101 are spherical particles is, for example, 1 μm or more, preferably 10 μm or more, from the viewpoint of suppressing aggregation of the particles. Further, from the viewpoint of smoothness, the average particle size of the inorganic particles 101 is, for example, 100 μm or less, preferably 50 μm or less.

  In addition, as the inorganic particles 101, particles having different particle sizes can be used in combination. When inorganic particles 101 are used as a filler for semiconductor encapsulation, fluidity can be improved by combining particles having different particle sizes, so that high filler filling is possible and package reliability such as solder heat resistance is achieved. The property can be further improved. In that case, as the inorganic particles combined with the inorganic particles having the above average particle diameter, the average particle diameter is, for example, 50 nm or more, preferably 200 nm or more, from the viewpoint of suppressing aggregation of the particles. From the viewpoint of improving fluidity, the thickness is, for example, 2.5 μm or less, preferably 1 μm or less.

  Although content of the inorganic particle 101 is not specifically limited, 70 mass% or more and 96 mass% or less of the whole resin composition for semiconductor sealing are preferable, and 85 mass% or more and 92 mass% or less are more preferable. When the content is within the above range, a decrease in solder resistance and a decrease in fluidity can be more effectively suppressed.

  Next, the epoxy resin (A), the curing agent (B) and the curing accelerator (C) will be described.

The epoxy resin (A) is a monomer, oligomer, or polymer in general having two or more epoxy groups in one molecule, and its molecular weight and molecular structure are not particularly limited.
Examples of the epoxy resin include bifunctional or crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, and hydroquinone type epoxy resin;
Novolac type epoxy resins such as cresol novolac type epoxy resin, phenol novolak type epoxy resin, naphthol novolak type epoxy resin;
Phenol aralkyl type epoxy resins such as phenylene skeleton-containing phenol aralkyl type epoxy resins, biphenylene skeleton containing phenol aralkyl type epoxy resins, phenylene skeleton containing naphthol aralkyl type epoxy resins;
Trifunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins;
Modified phenol type epoxy resins such as dicyclopentadiene modified phenol type epoxy resin, terpene modified phenol type epoxy resin;
And heterocyclic ring-containing epoxy resins such as triazine nucleus-containing epoxy resins. These may be used alone or in combination of two or more.

Among these, from the viewpoint of improving package reliability as a filler using the functional particles 100 as a semiconductor encapsulant, for example, novolac epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins;
Biphenyl type epoxy resin;
Phenol aralkyl type epoxy resins such as phenylene skeleton-containing phenol aralkyl type epoxy resins, biphenylene skeleton containing phenol aralkyl (ie biphenyl aralkyl) type epoxy resins, phenylene skeleton containing naphthol aralkyl type epoxy resins;
Trifunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins;
Modified phenol type epoxy resins such as dicyclopentadiene modified phenol type epoxy resin and terpene modified phenol type epoxy resin;
A heterocyclic ring-containing epoxy resin such as a triazine nucleus-containing epoxy resin or an arylalkylene type epoxy resin is preferably used.

  Although content of an epoxy resin (A) is not specifically limited, It is preferable that it is 2 mass% or more and 15 mass% or less of the whole resin composition for semiconductor sealing, and is 2.5 mass% or more and 8 mass% or less. It is more preferable. Thereby, a fall of solder resistance and a fall of fluidity can be controlled more effectively.

The curing agent (B) is not particularly limited as long as it is cured by reacting with an epoxy resin, and specific examples thereof include diethylenetriamine (DETA), triethylenetetramine (TETA), metaxylenediamine (MXDA) and the like. In addition to aromatic polyamines such as aliphatic polyamines, diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone (DDS), polyamine compounds containing dicyandiamide (DICY), organic acid dihydrazide, and the like;
Hexahydrophthalic anhydride (HHPA), alicyclic acid anhydrides such as methyltetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA), etc. Acid anhydrides, including aromatic acid anhydrides;
Bisphenol compounds such as novolak type phenol resins, phenylene skeleton-containing phenol aralkyl resins, biphenylene skeleton-containing phenol aralkyl (ie biphenyl aralkyl) resins, phenol aralkyl-type epoxy resins such as phenylene skeleton-containing naphthol aralkyl resins, and bisphenol A such as bisphenol A;
Polymercaptan compounds such as polysulfide, thioester, thioether;
Isocyanate compounds such as isocyanate prepolymers, blocked isocyanates;
Organic acids such as carboxylic acid-containing polyester resins;
Tertiary amine compounds such as benzyldimethylamine (BDMA) and 2,4,6-tridimethylaminomethylphenol (DMP-30);
Imidazole compounds such as 2-methylimidazole, 2-ethyl-4-methylimidazole (EMI24); and Lewis acids such as BF3 complexes;
Phenolic resins such as novolac type phenolic resin and resol type phenolic resin;
And urea resins such as methylol group-containing urea resins; and melamine resins such as methylol group-containing melamine resins.

  Among these curing agents, it is particularly preferable to use a phenolic resin. The phenolic resin used in the present embodiment is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, a phenol novolak resin , Cresol novolak resin, dicyclopentadiene-modified phenol resin, terpene-modified phenol resin, triphenolmethane type resin, phenol aralkyl resin (having a phenylene skeleton, biphenylene skeleton, etc.), etc., and these can be used alone. In addition, two or more types may be used in combination.

  Although content of a hardening | curing agent (B) is not specifically limited, 1 to 15 mass% is preferable with respect to the whole resin composition for semiconductor sealing, and 2 to 7 mass% is more preferable. Thereby, a fall of solder resistance and a fall of fluidity can be controlled more effectively.

Moreover, the hardening accelerator (C) should just accelerate | stimulate reaction of an epoxy resin (A) and a hardening | curing agent (B), and the thing currently used for the epoxy resin composition for general semiconductor sealing is utilized. can do.
Specific examples include tertiary phosphines, quaternary phosphonium compounds, organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphonium compounds and silane compounds, and the like. Phosphorus atom-containing compounds such as adducts of secondary phosphine and electron-deficient compounds; tertiary amine compounds exemplified by 1,8-diazabicyclo (5,4,0) undecene-7, benzyldimethylamine, 2-methylimidazole, etc. And nitrogen atom-containing compounds such as cyclic and acyclic amidine compounds. These curing accelerators may be used alone or in combination of two or more. Among these, a phosphorus atom-containing compound is preferable, and a tetra-substituted phosphonium compound is preferable in view of the fact that the fluidity can be improved by lowering the viscosity of the resin composition for encapsulating a semiconductor, and in addition, in view of the cure start-up speed. In addition, when considering the point of low thermal modulus of the cured product of the resin composition for semiconductor encapsulation, an adduct of a phosphobetaine compound, a phosphine compound and a quinone compound is preferable, and when considering the latent curability, Adducts of phosphonium compounds and silane compounds are preferred.

  Examples of the organic phosphine include a first phosphine such as ethylphosphine and phenylphosphine; a second phosphine such as dimethylphosphine and diphenylphosphine; and a third phosphine such as trimethylphosphine, triethylphosphine, tributylphosphine, and triphenylphosphine.

  Examples of the tetra-substituted phosphonium compound include compounds represented by the following general formula (4).

  Although the compound represented by the said General formula (4) is obtained as follows, for example, it is not limited to this. First, a tetra-substituted phosphonium halide, an aromatic organic acid and a base are mixed in an organic solvent and mixed uniformly to generate an aromatic organic acid anion in the solution system. Subsequently, when water is added, the compound represented by the general formula (4) can be precipitated. In the compound represented by the general formula (4), R7, R8, R9 and R10 bonded to the phosphorus atom are phenyl groups, and AH is a compound having a hydroxyl group in an aromatic ring, that is, phenols, and A is preferably an anion of the phenol.

  Examples of the phosphobetaine compound include compounds represented by the following general formula (5).

  The compound represented by the general formula (5) is obtained, for example, as follows. First, it is obtained through a step of bringing a triaromatic substituted phosphine, which is a third phosphine, into contact with a diazonium salt and replacing the triaromatic substituted phosphine with a diazonium group of the diazonium salt. However, the present invention is not limited to this.

  Examples of the adduct of a phosphine compound and a quinone compound include compounds represented by the following general formula (6).

  The phosphine compound used as an adduct of a phosphine compound and a quinone compound has no substitution on aromatic rings such as triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, tris (benzyl) phosphine, etc. Or those having a substituent such as an alkyl group or an alkoxyl group are preferred, and examples of the alkyl group and alkoxyl group include those having 1 to 6 carbon atoms. From the viewpoint of availability, triphenylphosphine is preferable.

  In addition, examples of the quinone compound used for the adduct of the phosphine compound and the quinone compound include o-benzoquinone, p-benzoquinone, and anthraquinones. Among them, p-benzoquinone is preferable from the viewpoint of storage stability.

  As a method for producing an adduct of a phosphine compound and a quinone compound, the adduct can be obtained by contacting and mixing in a solvent capable of dissolving both organic tertiary phosphine and benzoquinone. The solvent is preferably a ketone such as acetone or methyl ethyl ketone, which has low solubility in the adduct. However, the present invention is not limited to this.

  In the compound represented by the general formula (6), R11, R12 and R13 bonded to the phosphorus atom are phenyl groups, and R14, R15 and R16 are hydrogen atoms, that is, 1,4-benzoquinone and tri A compound to which phenylphosphine has been added is preferable in that it reduces the thermal modulus of the cured resin thermal composition.

  Examples of the adduct of the phosphonium compound and the silane compound include compounds represented by the following general formula (7).

  In the general formula (7), examples of R17, R18, R19, and R20 include a phenyl group, a methylphenyl group, a methoxyphenyl group, a hydroxyphenyl group, a naphthyl group, a hydroxynaphthyl group, a benzyl group, a methyl group, and an ethyl group. , N-butyl group, n-octyl group, cyclohexyl group and the like, among these, an aromatic group having a substituent such as phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, hydroxynaphthyl group, or the like An unsubstituted aromatic group is more preferable.

  Moreover, in the said General formula (7), X2 is an organic group couple | bonded with Y2 and Y3. Similarly, X3 is an organic group bonded to the groups Y4 and Y5. Y2 and Y3 are groups formed by proton-donating substituents releasing protons, and groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate structure. Similarly, Y4 and Y5 are groups formed by proton-donating substituents releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. The groups X2 and X3 may be the same or different, and the groups Y2, Y3, Y4, and Y5 may be the same or different.

  The groups represented by -Y2-X2-Y3- and -Y4-X3-Y5- in the general formula (7) are composed of groups in which the proton donor releases two protons. Examples of proton donors include catechol, pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2′-biphenol, 1,1′-bi-2-naphthol, Salicylic acid, 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chloranilic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propanediol, glycerin, etc. Among these, catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable.

  Z1 in the general formula (7) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, Aliphatic groups such as hexyl group and octyl group; aromatic groups such as phenyl group, benzyl group, naphthyl group and biphenyl group; reactive substituents such as glycidyloxypropyl group, mercaptopropyl group, aminopropyl group and vinyl group; Among them, a methyl group, an ethyl group, a phenyl group, a naphthyl group, and a biphenyl group are more preferable from the viewpoint of thermal stability.

  As a method for producing an adduct of a phosphonium compound and a silane compound, a silane compound such as phenyltrimethoxysilane and a proton donor such as 2,3-dihydroxynaphthalene are added to a flask containing methanol and dissolved, and then room temperature. Sodium methoxide-methanol solution is added dropwise with stirring. Further, when a solution prepared by dissolving a tetra-substituted phosphonium halide such as tetraphenylphosphonium bromide prepared in methanol in methanol is added dropwise with stirring at room temperature, crystals are deposited. The precipitated crystals are filtered, washed with water, and vacuum dried to obtain an adduct of a phosphonium compound and a silane compound. However, it is not limited to this.

  More specifically, examples of the curing accelerator include 1,8-diazabicyclo (5,4,0) undecene-7 (DBU), triphenylphosphine, 2-methylimidazole, tetraphenylphosphonium / tetraphenylborate, and the like. . These may be used alone or in combination.

  In this embodiment, the compounding quantity of a hardening accelerator (C) shall be 0.1 mass% or more in the resin composition for whole semiconductor sealing, for example. Thereby, the fall of sclerosis | hardenability of a composition can be suppressed much more effectively. Moreover, the compounding quantity of a hardening accelerator (C) shall be 1 mass% or less, for example in the resin composition for whole semiconductor sealing. Thereby, the fall of the fluidity | liquidity of a composition can be suppressed more effectively.

Next, in the present embodiment, specific combinations of the above components (A) to (C) include the following.
Inorganic particles 101: spherical silica, first layer 103: curing agent and curing accelerator for epoxy resin, second layer 105: epoxy resin.
Inorganic particles 101: crystalline silica and aluminum hydroxide, first layer 103: curing agent for epoxy resin, second layer 105: epoxy resin.
By setting it as the said combination, it can use further more suitably as a resin composition for semiconductor sealing excellent in storage stability.

Moreover, in the functional particle 100, the following are mentioned as a more specific structure of an epoxy resin (A), its hardening | curing agent (B), and a hardening accelerator (C), for example.
Inorganic particles 101: 87 parts by mass, first layer 103: biphenyl type epoxy resin 6.1 parts by mass, phenol novolac resin 4.0 parts by mass, second layer 105: triphenylphosphine 0.15 parts by mass.

Moreover, the functional particle 100 may contain resin other than an epoxy resin.
As the other resin, for example, a curable resin can be used. Here, examples of the curable resin include the following thermosetting resins. Examples thereof include phenol resin, cyanate ester resin, urea (urea) resin, melamine resin, unsaturated polyester resin, bismaleimide resin, polyurethane resin, diallyl phthalate resin, silicone resin, and resin having a benzoxazine ring.

  Oil-modified resole modified with phenolic novolak resin, cresol novolak resin, novolak type phenolic resin such as bisphenol A type novolak resin, methylol type resole resin, dimethylene ether type resole resin, tung oil, linseed oil, walnut oil, etc. Examples include resol type phenol resins such as phenol resins. These can be used alone or in combination of two or more.

  Moreover, as cyanate ester resin, what reacted the halogenated cyanide compound and phenols, what prepolymerized this by methods, such as a heating, can be used. Specific examples include bisphenol type cyanate resins such as novolac type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, and tetramethyl bisphenol F type cyanate resin. These can be used alone or in combination of two or more.

  In addition, in the resin composition for semiconductor encapsulation, as a composition containing a filler, in addition to the functional particles 100, a metal hydroxide, a coupling agent, a release agent, an ion trap agent, a coloring, depending on the application. Various known components can be blended in the resin composition for encapsulating a semiconductor such as an agent and a flame retardant. Specifically, in the composition, a curable resin, a filler other than the functional particles 100, a coupling agent, a colorant such as carbon black and bengara, a low stress component such as silicone oil and silicone rubber, a natural wax, a synthetic Wax, higher fatty acids and release salts such as metal salts thereof or paraffin, inorganic ion exchangers such as hydrates such as bismuth oxide, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, hydrotalcite, antimony oxide, boric acid You may mix | blend various additives, such as flame retardants, such as zinc, and antioxidant, suitably.

Next, the manufacturing method of the resin composition for semiconductor sealing is demonstrated. First, a method for producing the functional particle 100 will be described.
The functional particle 100 is obtained, for example, by sequentially performing a step of forming the first layer 103 on the surface of the inorganic particle 101 and a step of forming the second layer 105 on the surface of the first layer 103.

  Specifically, in the functional particle 100, the inorganic particles 101 and the powder that is a raw material of the material constituting the first layer 103 are put into a mixing container in a mechanical particle composite apparatus, and the stirring in the container is performed. It is obtained by a method of rotating a mixing vessel while rotating a blade or the like, or fixing or rotating a stirring blade or the like. By rotating the above stirring blades and the like at high speed, the inorganic particles 101 and the powder raw material are subjected to mechanical action including compressive force, shear force and impact force, so that the powder is compounded on the surface of the inorganic particles 101. As a result, the first layer 103 is formed. Then, the second layer 105 is formed on the first layer 103 by performing the above-described treatment using the particles on which the first layer 103 is formed and the powder that is the raw material of the second layer 105. Is done.

  When the first layer 103 or the second layer 105 is formed, any one or two components of the epoxy resin (A), the curing agent (B), and the curing accelerator (C) are added to the first layer 103 or the second layer 105. The first layer 103 and the second layer 105 are treated so that the other components are contained in the first layer 103. The raw material used for the first layer 103 and the second layer 105 is an epoxy resin (A). A plurality of raw materials other than the curing agent (B) and the curing accelerator (C) may be mixed in advance, and the first or second layer may be formed using the mixture.

  More specifically, the rotational speed of the stirring blades is 1 to 50 m / s in peripheral speed, and 7 m / s or more, preferably 10 m / s or more from the viewpoint of the expected treatment effect. In addition, from the viewpoint of suppressing heat generation during processing and preventing over-pulverization, the rotational speed of the stirring blade or the like is, for example, 35 m / s or less, preferably 25 m / s or less.

  Here, the mechanical particle compounding device refers to a raw material such as a plurality of types of powders by applying a mechanical action including a compressive force, a shearing force and an impact force to the raw materials such as a plurality of types of powders. It is an apparatus that can obtain a powder in which they are bonded together. As a method of applying a mechanical action, a rotating body having one or a plurality of stirring blades and the like and a mixing container having an inner peripheral surface close to a tip portion of the stirring blades and the like are provided, and the stirring blades and the like are rotated. Examples thereof include a method and a method of rotating a mixing container while fixing or rotating a stirring blade or the like. The shape of the stirring blade is not particularly limited as long as a mechanical action can be applied, and examples thereof include an elliptical shape and a plate shape. Further, the stirring blade or the like may have an angle with respect to the rotation direction. Moreover, you may process a groove | channel etc. in the inner surface of a mixing container.

  Examples of the mechanical particle compounding device include hybridization manufactured by Nara Machinery Co., Ltd., kryptron manufactured by Kawasaki Heavy Industries, Ltd., mechanofusion and nobilta manufactured by Hosokawa Micron Co., theta composer manufactured by Tokuju Kakujo Co., Ltd. A CF mill manufactured by the company may be mentioned, but not limited thereto.

Although the temperature in the container during mixing is set according to the raw material, it is set to, for example, 5 ° C. or more and 50 ° C. or less, and 40 ° C. or less, preferably 25 ° C. or less from the viewpoint of preventing melting of organic matter. However, it is also possible to process the container in a state where the organic matter is melted by heating.
Further, the mixing time is set according to the raw material, but is set to, for example, 30 seconds or more and 120 minutes or less, 1 minute or more from the viewpoint of the expected treatment effect, preferably 3 minutes or more, and 90 from the viewpoint of productivity. Min or less, preferably 60 min or less.

  From the viewpoint of forming the first layer 103 and the second layer 105 homogeneously on the inorganic particles 101, the solid components of the raw materials of the first layer 103 and the second layer 105 are obtained using a jet mill or the like. It is preferable to grind in advance. The shape of the pulverized product may be arbitrarily selected from a crushed shape, a substantially spherical shape, a true spherical shape, and the like. From the viewpoint of more stably forming each layer in the first layer 103 and the second layer 105, the average particle diameter of the raw material of each layer of the first layer 103 and the second layer 105 is, for example, that of the inorganic particles 101. The average particle size is set to be equal to or smaller than the average particle size, and is preferably equal to or smaller than ½ of the average particle size of the inorganic particles 101.

Here, in this specification, the average particle diameter of each particle is specifically an average particle diameter d50 (median diameter) measured by the following method.
Median diameter: Particles measured by a wet method using a laser diffraction / scattering particle size distribution measuring apparatus (LA-950V2 manufactured by Horiba, Ltd.) using analysis based on the Franhofer diffraction theory and Mie's scattering theory. When divided into two from the diameter, the diameter where the large side and the small side are equal is the median diameter. In the wet method, a small amount (about one earpick) of a measurement sample is added to 50 ml of pure water, a surfactant is added, and the sample is treated for 3 minutes in an ultrasonic bath, and a solution in which the sample is dispersed is used. .

  In addition, the analysis of the layer structure of the obtained functional particle 100 can be performed by a scanning electron microscope, Raman spectroscopy, or the like.

  The resin composition for semiconductor encapsulation of this embodiment can be obtained by mixing the functional particles 100 obtained by the above-described procedure and other additives as necessary, for example, at room temperature using a mixer. Further, it may be melt-kneaded with a kneader such as an extruder such as a roll or a kneader within a range not deteriorating the effect of the present invention, and pulverized after cooling.

  A molded body is obtained by molding the obtained resin composition. In order to manufacture a molded body, it is cured and molded by a molding method such as a transfer mold, a compression mold, or an injection mold. At the time of molding, all or part of the first layer 103 and the second layer 105 may change in composition or form. For example, the resin and the curing agent contained in the first layer 103 and the second layer 105 may be cured by molding, and the inorganic particles 101 derived from the filler may remain in the cured product.

  Moreover, the shape of the resin composition for semiconductor sealing can be selected according to the shaping | molding method at the time of shape | molding a composition. For example, the semiconductor sealing resin composition of this embodiment may be a granule for compression molding. Moreover, the tablet for transfer molding may be sufficient as the resin composition of this embodiment.

  Among these, by making the resin composition of the present embodiment into a granular form composed of the functional particles 100, the aggregation of the particles is suppressed, so that the powder fluidity is improved and the adhesion becomes difficult. Therefore, it is possible to reliably prevent troubles such as stagnation during transport of the resin composition of the present embodiment to the molding die. Moreover, the filling property at the time of shaping | molding can be improved. Therefore, the yield at the time of obtaining a molded object by compression molding can be improved.

  From the viewpoint of improving the handling stability during transportation and weighing, and the storage stability of the resin composition for semiconductor encapsulation, in the granular resin composition for semiconductor encapsulation, sieving using a JIS standard sieve The proportion of fine powder of less than 1 μm with respect to the whole semiconductor sealing resin composition in the particle size distribution measured by the above is, for example, 5 mass% or less, preferably 3 mass% or less.

  Further, from the viewpoint of reducing the proportion of fine powder in the granular resin composition for semiconductor encapsulation, the particle diameter d10 at which the cumulative frequency measured using a laser diffraction particle size distribution measuring device is 10%, for example, 3 μm or more, preferably 5 μm or more. In addition, there is no restriction | limiting in particular in the upper limit of d10, Although it can set according to the average particle diameter of the base particle etc. which considered the gate size etc. of the shaping die, it shall be 10 micrometers or less, for example.

Next, the effect of this embodiment is demonstrated.
In this embodiment, the resin composition for semiconductor encapsulation is composed of the functional particles 100, and any one or two of the epoxy resin (A), the curing agent (B), and the curing accelerator (C). One component is included in the first layer 103 and the remaining components are included in the second layer 105. For this reason, each component of an epoxy resin (A), a hardening | curing agent (B), and a hardening accelerator (C) can be stably hold | maintained on the inorganic particle 101. FIG. And it can suppress that a component reacts during storage and changes a composition, and can improve storage stability.

  Moreover, since the compounding composition of each functional particle 100 can be homogenized as described above, the functional particle 100 in which the compounding composition is homogenized among the particles is used as a resin composition for semiconductor encapsulation. As a result, the manufacturing stability of the semiconductor device can be improved.

  In the following embodiment, it demonstrates centering on a different point from 1st embodiment.

(Second embodiment)
FIG.1 (b) is sectional drawing which shows the structure of the functional particle used for the resin composition for semiconductor sealing in this embodiment. The basic configuration of the functional particle 102 shown in FIG. 1B is the same as that of the functional particle 100 described in the first embodiment (FIG. 1A), but the second layer 105 includes a plurality of layers. The difference is that it has layers.

  Specifically, in the functional particle 102, the second layer 105 includes a lower layer 105b provided in contact with the upper portion of the first layer 103 and an upper layer 105a provided in contact with the lower layer 105b.

  The first layer 103 includes any one component of the epoxy resin (A), the curing agent (B), and the curing accelerator (C). Of the second layer 105, the lower layer 105 b includes one component other than the component contained in the first layer 103 among the epoxy resin (A), the curing agent (B), and the curing accelerator (C). The upper layer 105a includes a component that is not included in any of the first layer 103 and the lower layer 105b. For example, the first layer 103 including the epoxy resin (A), the lower layer 105b including the curing agent (B), and the upper layer 105a including the curing accelerator (C) may be provided in this order.

  In the resin composition for semiconductor encapsulation of this embodiment, the epoxy resin (A), the curing agent (B), and the curing accelerator (C) are laminated on the inorganic particles 101 in a predetermined order as separate layers. The functional particles 102 were included. Thereby, reaction and quality change of the components during preservation | save can be suppressed much more effectively.

  Further, one of the first layer 103 and the second layer 105 includes a curing agent (B) and a curing accelerator (C) and the other includes an epoxy resin (A), or the first layer 103 and The functional particle 102 is further excellent in storage stability by adopting a configuration in which one of the second layers 105 includes the epoxy resin (A) and the curing agent (B) and the other includes the curing accelerator (C). It will be a thing.

(Third embodiment)
In the functional particles used in the above embodiment, an intervening layer separating the first layer 103 and the second layer 105 may be provided. Hereinafter, the functional particle 100 of the first embodiment will be described as an example.

  The basic structure of the functional particle 110 shown in FIG. 2A is the same as that of the functional particle 100 (FIG. 1A), except that it further includes an intervening layer 107. The first layer 103 and the second layer 105 are separated by the intervening layer 107. By providing the intervening layer 107, it is possible to prevent the first layer 103 and the second layer 105 from coming into contact with each other. Therefore, the reaction between the resin, the curing agent, and the curing accelerator contained in these layers is performed. Furthermore, it can suppress reliably. For this reason, the change of the composition by reaction between resin, a hardening | curing agent, and a hardening accelerator can be suppressed further more reliably, and it can be set as the structure which was further excellent in storage stability.

  Although there is no restriction | limiting in particular in the constituent material of the intervening layer 107, For example, 1 or more types selected from the group which consists of a metal hydroxide, a coupling agent, a mold release agent, an ion trap agent, a coloring agent, and a flame retardant are included.

  If the intervening layer 107 is composed mainly of a metal hydroxide such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, or hydrotalcite, the contact between the first layer 103 and the second layer 105 is suppressed. In addition, effects such as improvement of flame retardancy and corrosion resistance are exhibited.

  If the intervening layer 107 is composed of a known coupling agent as a main component in the semiconductor sealing composition such as an epoxy silane coupling agent or an amino silane coupling agent, it is between the first layer 103 and the second layer 105. It works efficiently and can contribute to lowering the viscosity during molding. Moreover, the outstanding reinforcement effect can be show | played.

The intervening layer 107 may be mainly composed of a low stress component such as silicone oil, silicone rubber such as low melting point silicone rubber, or synthetic rubber such as low melting point synthetic rubber. Accordingly, the first layer 103 and the second layer 105 efficiently operate and easily penetrate between the first layer 103 and the second layer 105. Contact with the second layer 105 can be suppressed, and the function as a low-stress material can be expressed more easily, and the reliability when used as a sealant for a semiconductor device is further improved.
The intervening layer 107 may be mainly composed of a pigment (colorant) such as carbon black, an ion trapping agent such as hydrotalcite, or the like.
The intervening layer 107 is made of a flame retardant, for example. As the flame retardant, a phosphorus-based, silicone-based, or organometallic salt-based material may be used in addition to the metal hydroxide.

  Further, the intervening layer 107 may contain a wax-like substance as a main material, and specific examples of the wax-like substance include natural wax such as carnauba wax and synthetic wax such as polyethylene wax. When the intervening layer 107 is made of a wax-like substance, the wax-like substance melts during molding and easily covers the entire surface of the first layer 103, so that an effect such as an improvement in releasability is exhibited. .

  In addition, the intervening layer 107 may include one or more inorganic materials selected from the group consisting of silica, alumina, and silicon nitride, for example. Furthermore, in addition to the above materials, a component that is substantially inert to the component adjacent to the intervening layer may be provided. Thereby, since the linear expansion coefficient when it is set as a semiconductor device can be reduced, the reliability when using as a sealing agent of a semiconductor device further improves.

(Fourth embodiment)
In the functional particles used in the above embodiment, a third layer may be further provided between the inorganic particles 101 and the first layer 103. Hereinafter, the functional particle 110 according to the third embodiment will be described as an example.

  FIG. 2B is a cross-sectional view showing the structure of the particles having the third layer 109. The basic structure of the functional particle 120 shown in FIG. 2B is the same as that of the functional particle 110 shown in FIG. 2A, but a third layer 109 is further provided in contact with the inorganic particle 101. ing.

  Although there is no restriction | limiting in particular in the material of the 3rd layer 109, For example, 1 or more types selected from the group which consists of a metal hydroxide, a coupling agent, a mold release agent, an ion trap agent, a coloring agent, and a flame retardant are included.

In addition, the third layer 109 may use, for example, an inorganic material different from the inorganic particles 101 as a main material. Examples of inorganic materials different from the inorganic particles 101 include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, and hydrotalcite;
Talc; and clay.

Further, the third layer 109 can exhibit an excellent reinforcing effect by using a known coupling agent as a main material in a resin composition for semiconductor encapsulation such as an epoxy silane coupling agent and an aminosilane coupling agent. it can.
The third layer 109 is made of, for example, a flame retardant. As the flame retardant, a phosphorus-based, silicone-based, or organometallic salt-based material may be used in addition to the metal hydroxide.
Furthermore, the third layer 109 can be made of the same constituent material as the intervening layer 107 exemplified in the second embodiment.

Specific examples of the combination of the inorganic particles 101 and the main material of the third layer 109 include the following.
A combination of inorganic particles 101: silica, third layer 109: metal hydroxide, and inorganic particles 101: alumina, third layer 109: silicone.

(Fifth embodiment)
The present embodiment relates to a semiconductor device formed by sealing a semiconductor element using the resin composition for sealing a semiconductor described in the above embodiments. Since the semiconductor device in the present embodiment is sealed using the sealing resin composition described in the above embodiments, the semiconductor device is excellent in manufacturing stability and manufacturing yield.

  Moreover, the manufacturing method of the semiconductor device in this embodiment includes the process of sealing a semiconductor element, for example by compression molding, transfer molding, injection molding, etc. using the resin composition for semiconductor sealing.

FIG. 3 is a cross-sectional view showing a configuration of a semiconductor device using the semiconductor sealing resin composition in the present embodiment. In the semiconductor device shown in FIG. 3, the semiconductor element 1 is fixed on the die pad 2 via a die bond material cured product 6. The electrode pad of the semiconductor element 1 and the lead frame 4 are connected by a gold wire 3. The semiconductor element 1 is sealed with a cured sealant 5.
The encapsulated material cured product 5 is obtained by curing the resin composition for semiconductor encapsulation in the above-described embodiment.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

  In the following examples, functional particles having a plurality of layers on the substrate particles were produced. Table 1 shows the composition (mass ratio) of the components of each layer. A Theta composer manufactured by Tokuju Kogakusha Co., Ltd. was used as a mechanical particle composite device.

Example 1
All the solid raw materials for the coating layer were previously pulverized by a jet mill. A single track jet mill manufactured by Seishin Enterprise Co., Ltd. was used as the jet mill. The pulverization conditions were a high pressure gas pressure of 0.6 MPa.

  Fused spherical silica (average particle diameters 29 μm and 0.1 μm) was blended with the formulation shown in Table 1 to obtain an inorganic filler. By adding 88 parts (parts by mass, the same applies hereinafter) of the obtained inorganic filler and 0.3 part of the coupling agent to a mechanical particle composite apparatus, the mixture was stirred for 15 minutes at a peripheral speed of 10 m / s of the stirring blade. The coating process was performed.

  Next, the obtained coated particles and 6.3 parts of the epoxy resin were put into the mechanical particle compounding apparatus and stirred for 15 minutes at a peripheral speed of the stirring blade of 10 m / s to perform coating treatment.

  Then, the obtained coated particles and 4.3 parts of phenol resin were put into the above apparatus and stirred for 15 minutes at a peripheral speed of a stirring blade of 10 m / s to perform coating treatment.

  Furthermore, the obtained coated particles, a curing accelerator, an ion trapping agent, a coloring agent, and a release agent are added in the formulation shown in Table 1, and stirred for 15 minutes at a peripheral speed of the stirring blade of 10 m / s. Coated.

  By the above procedure, a coupling agent layer (third layer 109), an epoxy resin layer (first layer 103), a phenol resin layer (on the inorganic particles 101 (FIG. 1 (b), FIG. 2 (b)) ( Curing agent layer: a lower layer 105b of the second layer 105) is formed in this order, and a coating layer (an upper layer 105a of the second layer 105) further including a curing accelerator, an ion trapping agent, a colorant, and a release agent. ) Was formed.

(Example 2)
Fused spherical silica (average particle diameters 29 μm and 0.1 μm) was blended with the formulation shown in Table 1 to obtain an inorganic filler. 88 parts of the obtained inorganic filler and 0.3 part of the coupling agent were put into the same mechanical particle compounding apparatus as in Example 1 and stirred for 15 minutes at a peripheral speed of 10 m / s of the stirring blade, thereby covering the mixture. Processed.

  Next, the obtained coated particles, ion trapping agent, colorant, and release agent were added to the same apparatus as in Example 1 with the formulation shown in Table 1, and the stirring blade was rotated at a peripheral speed of 10 m / s for 15 minutes. Stirring and coating were performed.

  Then, the obtained coated particles, 4.3 parts of phenol resin, and 0.2 part of a curing accelerator were mixed in advance into the same apparatus as in Example 1 and stirred at a peripheral speed of 10 m / s for 15 minutes. Stirring and coating were performed.

  Furthermore, the obtained coated particles and 6.3 parts of epoxy resin were added, and the coating was performed by stirring for 15 minutes at a peripheral speed of 10 m / s of the stirring blade.

  By the above procedure, a coating layer containing a coupling agent layer (third layer 109), an ion trapping agent, a colorant and a release agent on the inorganic particles 101 (FIGS. 2A and 2B), A functional particle in which a mixed layer (first layer 103) of a phenol resin and a curing accelerator was formed and an epoxy resin layer (second layer 105) was further formed thereon was obtained.

Example 3
Fused spherical silica (average particle diameters 29 μm and 0.1 μm) was blended with the formulation shown in Table 1 to obtain an inorganic filler. 88 parts of the obtained inorganic filler and 0.3 part of the coupling agent were put into the same mechanical particle compounding apparatus as in Example 1 and stirred for 15 minutes at a peripheral speed of 10 m / s of the stirring blade, thereby covering the mixture. Processed.

  Next, 6.3 parts of the obtained coated particles and epoxy resin were put into a mechanical particle composite apparatus similar to that in Example 1, and stirred for 15 minutes at a peripheral speed of a stirring blade of 10 m / s to perform coating treatment. It was.

  Then, the obtained coated particles and 0.3 part of the release agent were put into a mechanical particle composite apparatus similar to that in Example 1, and stirred for 15 minutes at a peripheral speed of a stirring blade of 10 m / s to perform a coating treatment. It was.

  Further, the obtained coated particles, a phenol resin, a curing accelerator, an ion trapping agent, and a colorant were charged into the same mechanical particle compounding apparatus as in Example 1 with the formulation shown in Table 1, and a stirring blade The coating was performed by stirring for 15 minutes at a peripheral speed of 10 m / s.

  By the above procedure, the coupling agent layer (third layer 109), the epoxy resin layer (first layer 103), and the release agent layer (intervening layer 107) are formed on the inorganic particles 101 (FIG. 1B). Functional particles formed in this order and further having a coating layer (second layer 105) containing a phenol resin, a curing accelerator, an ion trapping agent, and a colorant formed thereon were obtained.

(Comparative Example 1)
All the raw materials shown in Table 1 were put into a Henschel mixer and pulverized and mixed to obtain a semiconductor sealing resin composition of this example. The mixing conditions were 1000 rpm for 10 minutes.

(Comparative Example 2)
The raw materials shown in Table 1 were mixed at room temperature with a mixer (container rotating V-type blender). Mixing conditions were 10 minutes at 30 rpm. The obtained mixture was melt-kneaded with a heating roll of 80 to 100 ° C. for 5 minutes, pulverized after cooling, and thus a semiconductor sealing resin composition of this example was obtained.

(Evaluation)
About the resin composition for semiconductor sealing which consists of functional particles obtained in Examples 1-3 and the resin composition for semiconductor sealing obtained in Comparative Examples 1 and 2, gel time (second), spiral flow (cm) Table 1 shows the measurement results of tablet formability, ash uniformity (%), and storage stability (spiral flow residual ratio) (%) after 40 ° C./7 days. Each of these items was measured by the following method.

A sample made of the resin composition for semiconductor encapsulation obtained in each example was placed on a hot plate having a gel time of 175 ° C., and the time until the sample was cured after kneading with a spatula was measured. The shorter this time, the faster the curing rate.
Spiral flow: Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), a mold for spiral flow measurement conforming to EMMI-1-66, mold temperature 175 ° C., injection pressure 6.9 MPa, maintenance The resin composition for semiconductor encapsulation was injected under a pressure time of 120 seconds, and the flow length was measured. The unit was cm.
Tablet moldability: A sample made of the resin composition for semiconductor encapsulation obtained in each example was tableted into a tablet. The case where the trouble shown below was produced was evaluated as x, and the case where the tablet was obtained satisfactorily without causing the problem was indicated as ◯.
In the tablet molding process, when the resin adheres to the inner surface of the mold and the appearance of the tablet is damaged.
Ash uniformity: Samples made of the resin composition for semiconductor encapsulation obtained in each example were mixed at room temperature with a mixer (container rotation V-type blender). Mixing conditions were 10 minutes at 30 rpm. It sampled from five places of the obtained mixture, and measured the mass ratio of the residue after baking at 700 degreeC. The unit is%. A value obtained by subtracting the minimum value from the maximum value of the obtained measurement results was calculated. The smaller this value, the better the component uniformity.
7 days after storage at 40 ° C. (Spiral flow remaining rate): After storing a sample made of the resin composition for semiconductor encapsulation obtained in each example in a dryer adjusted to a temperature of 40 ° C. for 7 days, spiral flow was performed. The residual ratio (measured value after storage / measured value before storage) was determined from the spiral flow measurement results before and after storage. The larger this value is, the lower the spiral flow is and the better the storage stability.

In addition, about the resin composition for semiconductor sealing obtained in the comparative example 1, the sample did not melt | dissolve uniformly by the boss | bottle | boso at the time of a gel time measurement. Also, in the spiral flow measurement, the sample was uneven and the cured product was not uniform.
In the functional particles obtained in Examples 1 to 3, the proportion of fine powder of less than 1 μm was 1% by mass or less.
Moreover, in each Example, about the particle diameter d10 from which the cumulative frequency measured using a laser diffraction type particle size distribution measuring apparatus becomes 10%, Example 1 is 9.0 micrometers, Example 2 is 8.8 micrometers, and implementation is carried out. Example 3 was 9.0 μm.
Hereinafter, examples of the reference form will be added.
<1>
A resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B) of the epoxy resin, and a curing accelerator (C),
Including functional particles having base particles composed of an inorganic material, a first layer covering the base particles, and a second layer covering the first layer;
Among the epoxy resin (A), the curing agent (B), and the curing accelerator (C), one or two components are included in the first layer, and the other components are the second component. A semiconductor sealing resin composition contained in the layer.
<2>
In the resin composition for semiconductor encapsulation as described in <1>,
The first layer includes any one component of the epoxy resin (A), the curing agent (B), and the curing accelerator (C),
The second layer includes a layer including one component other than the component included in the first layer among the epoxy resin (A), the curing agent (B), and the curing accelerator (C); And a layer containing the other component other than the component contained in the first layer.
<3>
In the resin composition for semiconductor encapsulation as described in <1>,
One of said 1st and 2nd layers is a resin composition for semiconductor sealing in which one contains the said hardening | curing agent (B) and the said hardening accelerator (C), and the other contains the said epoxy resin (A).
<4>
In the resin composition for semiconductor encapsulation as described in <1>,
One of the first and second layers is a resin composition for encapsulating a semiconductor, wherein one includes the epoxy resin (A) and the curing agent (B), and the other includes the curing accelerator (C).
<5>
<1> thru | or <4> In the resin composition for semiconductor sealing as described in any one,
A resin composition for encapsulating a semiconductor, wherein an intervening layer separating the first and second layers of the functional particles is provided.
<6>
<5> The semiconductor sealing resin composition according to <5>, wherein the intervening layer is selected from the group consisting of metal hydroxides, coupling agents, mold release agents, ion trapping agents, colorants, and flame retardants. The resin composition for semiconductor sealing containing the above.
<7>
In the resin composition for semiconductor sealing as described in <5> or <6>
A resin composition for encapsulating a semiconductor, wherein the intervening layer includes one or more inorganic materials selected from the group consisting of silica, alumina, and silicon nitride.
<8>
<5> thru | or <7> The semiconductor sealing resin composition as described in any one of <7>, the said intervening layer makes a waxy substance a main material.
<9>
<1> thru | or <8> In the resin composition for semiconductor sealing as described in any one,
A resin composition for encapsulating a semiconductor, wherein the functional particle has a third layer provided in contact with the base material particle between the base material particle and the first layer.
<10>
In the resin composition for semiconductor encapsulation as described in <9>, said 3rd layer is selected from the group which consists of a metal hydroxide, a coupling agent, a mold release agent, an ion trap agent, a coloring agent, and a flame retardant. The resin composition for semiconductor sealing containing 1 or more types.
<11>
<1> to <10> In the resin composition for encapsulating a semiconductor according to any one of the above, one or two or more inorganic materials selected from the group consisting of silica, alumina, and silicon nitride are used as the material of the base particles. A resin composition for semiconductor encapsulation, which is a material.
<12>
<1> thru | or <11> In the resin composition for semiconductor sealing as described in any one,
The semiconductor sealing resin composition is granular, and the proportion of fine powder of less than 1 μm with respect to the entire semiconductor sealing resin composition in the particle size distribution measured by sieving using a JIS standard sieve is 5% by mass or less. A semiconductor sealing resin composition.
<13>
<1> thru | or <12> In the resin composition for semiconductor sealing as described in any one,
The semiconductor sealing resin composition is granular, and the semiconductor sealing resin composition has a particle diameter d10 of 3 μm or more with a cumulative frequency of 10% measured using a laser diffraction particle size distribution analyzer. .
<14>
<1> thru | or <13> The semiconductor device formed by sealing a semiconductor element using the resin composition for semiconductor sealing as described in any one.
<15>
<1> thru | or <13> The manufacturing method of a semiconductor device including the process of sealing a semiconductor element using the resin composition for semiconductor sealing as described in any one.

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Die pad 3 Gold wire 4 Lead frame 5 Sealing material hardened | cured material 6 Die bond material hardened | cured material 100 Functional particle 101 Inorganic particle 102 Functional particle 103 1st layer 105 2nd layer 105a Upper layer 105b Lower layer 107 Intervening layer 109 Third layer 110 Functional particles 120 Functional particles

Claims (12)

A resin composition for semiconductor encapsulation containing an epoxy resin (A), a curing agent (B) of the epoxy resin, and a curing accelerator (C),
Including functional particles having base particles composed of an inorganic material, a first layer covering the base particles, and a second layer covering the first layer;
One of the first layer and the second layer contains the epoxy resin (A) and does not contain the curing agent (B) and the curing accelerator (C).
A resin composition for semiconductor encapsulation , wherein the other layer contains the curing agent (B) and the curing accelerator (C) and does not contain the epoxy resin (A) . In the resin composition for semiconductor encapsulation according to claim 1 ,
A resin composition for encapsulating a semiconductor, wherein an intervening layer separating the first and second layers of the functional particles is provided. 3. The resin composition for encapsulating a semiconductor according to claim 2 , wherein the intervening layer is selected from the group consisting of a metal hydroxide, a coupling agent, a release agent, an ion trap agent, a colorant, and a flame retardant. The resin composition for semiconductor sealing containing the above. The resin composition for semiconductor encapsulation according to claim 2 or 3 , wherein the intervening layer contains one or more inorganic materials selected from the group consisting of silica, alumina, and silicon nitride. object. The semiconductor encapsulating resin composition according to any one of claims 2 to 4, wherein the intervening layer is a wax-like substance is mainly made, the semiconductor encapsulating resin composition. In the resin composition for semiconductor sealing of any one of Claims 1 thru | or 5 ,
A resin composition for encapsulating a semiconductor, wherein the functional particle has a third layer provided in contact with the base material particle between the base material particle and the first layer. The resin composition for semiconductor encapsulation according to claim 6 , wherein the third layer is selected from the group consisting of a metal hydroxide, a coupling agent, a release agent, an ion trapping agent, a colorant, and a flame retardant. The resin composition for semiconductor sealing containing 1 or more types. The semiconductor encapsulating resin composition according to any one of claims 1 to 7, the material of the base particles, silica, in one or more inorganic materials selected from the group consisting of alumina and silicon nitride A resin composition for semiconductor encapsulation. In the resin composition for semiconductor sealing of any one of Claims 1 thru | or 8 ,
The semiconductor sealing resin composition is granular, and the proportion of fine powder of less than 1 μm with respect to the entire semiconductor sealing resin composition in the particle size distribution measured by sieving using a JIS standard sieve is 5% by mass or less. A semiconductor sealing resin composition. In the resin composition for semiconductor sealing of any one of Claims 1 thru | or 9 ,
The semiconductor sealing resin composition is granular, and the semiconductor sealing resin composition has a particle diameter d10 of 3 μm or more with a cumulative frequency of 10% measured using a laser diffraction particle size distribution analyzer. . The semiconductor device formed by sealing a semiconductor element using the resin composition for semiconductor sealing of any one of Claims 1 thru | or 10 . The manufacturing method of a semiconductor device including the process of sealing a semiconductor element using the resin composition for semiconductor sealing of any one of Claims 1 thru | or 10 .

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