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JP5597305B2 - 電流センサ - Google Patents

電流センサ Download PDF

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Publication number
JP5597305B2
JP5597305B2 JP2013503419A JP2013503419A JP5597305B2 JP 5597305 B2 JP5597305 B2 JP 5597305B2 JP 2013503419 A JP2013503419 A JP 2013503419A JP 2013503419 A JP2013503419 A JP 2013503419A JP 5597305 B2 JP5597305 B2 JP 5597305B2
Authority
JP
Japan
Prior art keywords
film
nife
layer
alloy film
current sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013503419A
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English (en)
Japanese (ja)
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JPWO2012120940A1 (ja
Inventor
洋介 井出
正路 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2013503419A priority Critical patent/JP5597305B2/ja
Publication of JPWO2012120940A1 publication Critical patent/JPWO2012120940A1/ja
Application granted granted Critical
Publication of JP5597305B2 publication Critical patent/JP5597305B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Thin Magnetic Films (AREA)
JP2013503419A 2011-03-07 2012-01-27 電流センサ Active JP5597305B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013503419A JP5597305B2 (ja) 2011-03-07 2012-01-27 電流センサ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011049163 2011-03-07
JP2011049163 2011-03-07
PCT/JP2012/051850 WO2012120940A1 (fr) 2011-03-07 2012-01-27 Capteur de courant
JP2013503419A JP5597305B2 (ja) 2011-03-07 2012-01-27 電流センサ

Publications (2)

Publication Number Publication Date
JPWO2012120940A1 JPWO2012120940A1 (ja) 2014-07-17
JP5597305B2 true JP5597305B2 (ja) 2014-10-01

Family

ID=46797911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013503419A Active JP5597305B2 (ja) 2011-03-07 2012-01-27 電流センサ

Country Status (2)

Country Link
JP (1) JP5597305B2 (fr)
WO (1) WO2012120940A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103645449B (zh) * 2013-12-24 2015-11-25 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器
JP6265282B2 (ja) 2014-12-15 2018-01-24 株式会社村田製作所 電流センサ
WO2018037634A1 (fr) * 2016-08-23 2018-03-01 アルプス電気株式会社 Capteur magnétique et capteur de courant
JP6625083B2 (ja) 2017-03-21 2019-12-25 株式会社東芝 磁気センサ、生体細胞検出装置及び診断装置
JP2020042038A (ja) * 2019-11-26 2020-03-19 株式会社東芝 磁気センサ、生体細胞検出装置及び診断装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103120A (ja) * 2002-09-10 2004-04-02 Hitachi Ltd 差動バイアス型磁区制御構造を有する記録再生分離型磁気ヘッド
US7663131B2 (en) * 2007-03-08 2010-02-16 Magic Technologies, Inc. SyAF structure to fabricate Mbit MTJ MRAM
EP2442118B1 (fr) * 2009-06-12 2021-11-10 Alps Alpine Co., Ltd. Capteur de courant à équilibre magnétique

Also Published As

Publication number Publication date
JPWO2012120940A1 (ja) 2014-07-17
WO2012120940A1 (fr) 2012-09-13

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