JP5365525B2 - Semiconductor substrate bonding apparatus and semiconductor substrate bonding method - Google Patents

Abstract

A semiconductor substrate bonding apparatus (1) is provided with a first substrate holding table (24) for holding a first semiconductor substrate (Wu); a second substrate holding table (36) for holding a second semiconductor substrate (Wd); a first driving mechanism (46) for tilting and turning the second substrate holding table (36) in one direction about the shaft; a second driving mechanism (48), which tilts and turns the second substrate holding table (36) in the other direction about the shaft; and a control apparatus (90) for controlling drive of the first and the second drive mechanisms (46, 48). When the two substrates abut to each other, the control apparatus (90) calculates components of one and the other forces operating from the second semiconductor substrate (Wd) to the second substrate holding table (36), and based on each force component, the first and the second driving mechanisms (46, 48) are repeatedly driven, and the two substrates are bonded to each other with high parallelism.

Description

  The present invention relates to a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method for bonding one semiconductor substrate to another semiconductor substrate. In particular, the present invention relates to a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method in which the inclination of a substrate holding table that holds at least one semiconductor substrate is adjusted.

  A semiconductor substrate bonding apparatus is used for bonding substrates such as semiconductor substrates. This semiconductor substrate bonding apparatus includes two substrate holding tables, and the inclination of at least one of the substrate holding tables is adjusted by a stage device. The stage device is generally mounted on an XY stage for positioning in the XY direction in a horizontal plane, and after the semiconductor substrate is positioned in the XY direction by the XY stage, the rotation (θ) direction and the vertical (Z) direction Positioning and adjusting the inclination.

Here, when the semiconductor substrates are bonded together, high parallelism of the semiconductor substrates is required in order to prevent bonding failure and damage. Conventionally, as a technique for obtaining such parallelism between semiconductor substrates, for example, there is one disclosed in Patent Document 1 (Note that the technique disclosed in Patent Document 1 is not related to bonding between semiconductor substrates. , Relating to bonding of semiconductor chip and TAB tape). In this apparatus, a chip is mounted by measuring the tilt of the lower surface of the bonding tool via a measuring member 33 using a laser displacement meter, dial gauge, or the like, and adjusting the tilt of the tilt table (plate 16) based on the measured value. The stage 20 is made to follow the parallelism of the lower surface of the bonding tool.
JP-A-9-64094

  However, if the above-described conventional technique is used for bonding the semiconductor substrates, it can be traced to a certain degree of parallelism, but there is a limit to the parallelism that can be achieved. There is a possibility that the semiconductor substrate may be damaged or a bonding failure may occur due to the force.

  The present invention has been made in view of the above circumstances, and a semiconductor substrate bonding apparatus and a semiconductor capable of bonding both semiconductor substrates by increasing the parallelism of another semiconductor substrate with respect to one semiconductor substrate. It aims at providing the board | substrate bonding method.

  A semiconductor substrate bonding apparatus according to the present invention is a semiconductor substrate bonding apparatus for bonding a first semiconductor substrate and a second semiconductor substrate to each other, and a driving unit for tilting the second semiconductor substrate, and a driving unit And a controller that controls at least one of the first and second semiconductor substrates when the first and second semiconductor substrates partially contact each other. The load is calculated, and in accordance with the load, operation control of the drive unit is performed so that non-contact parts other than a part of the first and second semiconductor substrates are close to each other, and the first and second semiconductor substrates are mutually connected. The operation control is repeatedly executed until they become parallel.

  In this semiconductor substrate bonding apparatus, when the first and second semiconductor substrates partially contact each other, the control unit calculates a load acting on at least one of the semiconductor substrates, and according to the load, The operation of the drive unit is controlled so that non-contact parts other than a part of the first and second semiconductor substrates are close to each other, and the operation control is repeatedly executed until the first and second semiconductor substrates are parallel to each other. I have to. For this reason, the minute inclination of the other semiconductor substrate with respect to one semiconductor substrate is gradually reduced, the two semiconductor substrates become substantially parallel, and the two semiconductor substrates can be bonded together after increasing the parallelism of the two semiconductor substrates. It becomes possible.

  In the semiconductor substrate bonding apparatus according to the present invention, the part where the first and second semiconductor substrates are in contact with each other is a part of the periphery of at least one of the first and second semiconductor substrates. It is preferable.

  A semiconductor substrate bonding apparatus according to the present invention includes a first substrate holding table for holding a first semiconductor substrate, and a first substrate for holding a second semiconductor substrate so as to face the first semiconductor substrate. The first substrate holding unit for tilting the second substrate holding table about one of two axes intersecting each other in plan view of the second substrate holding table. A driving mechanism and a second driving mechanism for tilting the second substrate holding table around the other axis different from the one axis, and the control unit is held by the first substrate holding table One of the forces acting on the second substrate holding table from the second semiconductor substrate when the first semiconductor substrate contacts a part of the periphery of the second semiconductor substrate held on the second substrate holding table. Force component around the axis and around the other axis Was calculated as load acting a force component in the second semiconductor substrate, it is preferable to repeatedly perform the operation control for driving the first driving mechanism and the second driving mechanism based on the respective force component. According to this configuration, the minute inclination of the second semiconductor substrate with respect to the first semiconductor substrate is used as a force component around one and the other axes of the force acting on the second substrate holding table from the second semiconductor substrate. Based on these force components, the first and second drive mechanisms are driven to adjust the inclination of the second substrate holding table, thereby increasing the parallelism of both semiconductor substrates and increasing both of them. The semiconductor substrates can be bonded together.

  In the semiconductor substrate bonding apparatus according to the present invention, the two axes cross each other at angles other than 0 degrees and 180 degrees centering on the origin through the origin that is the holding center in the plan view of the second substrate holding table. It is preferable. In this way, the first and second drive mechanisms for tilting the second substrate holding table about each axis can operate independently, and the second substrate holding table (that is, the second substrate holding table) The semiconductor substrate) can be inclined at various inclination angles with respect to the horizontal plane. Moreover, such a three-dimensional tilt angle adjustment of the second semiconductor substrate can be realized with a simple structure.

  In the semiconductor substrate bonding apparatus according to the present invention, the two axes pass through the origin, which is the holding center in the plan view of the second substrate holding table, and are orthogonal to each other about the origin. Based on the component, the center of gravity position of the force acting on the second semiconductor substrate from the first semiconductor substrate is calculated, and when the center of gravity position is not on the origin, the center of gravity position is used to calculate the first drive mechanism and It is preferable to calculate the driving amount of the second driving mechanism. In this way, since the driving amount can be calculated based on the position of the center of gravity calculated from each force component that does not require complicated measurement, the second substrate holding table by the first driving mechanism and the second driving mechanism. Can be easily controlled. The holding center means a point on the second substrate holding table and corresponding to the center of gravity of the second semiconductor substrate.

  In the semiconductor substrate bonding apparatus according to the present invention, the first driving mechanism tilts the second substrate holding table on the other axis, and the second driving mechanism is the second substrate holding table on the one axis. Is tilted. The controller preferably calculates each reaction force generated in the first drive mechanism and the second drive mechanism as each force component when the first semiconductor substrate and the second semiconductor substrate contact each other. . In this way, each reaction force generated in the mechanisms is applied to the first and second drive mechanisms necessary for tilting the second substrate holding table so that the two semiconductor substrates are parallel to each other. Since it can calculate as a component, it can be set as the semiconductor substrate bonding apparatus of a simple structure.

  In the semiconductor substrate bonding apparatus according to the present invention, the first drive mechanism and the second drive mechanism are drive mechanisms using fluid pressure, and the control unit calculates each reaction force based on the change in the fluid pressure. Is preferred. In this way, each reaction force can be calculated based on a change in fluid pressure at which a minute change can be easily detected, and calculation accuracy is improved. In addition, since the inclination of the second substrate holding table can be adjusted based on the reaction force with high calculation accuracy in this way, minute inclination adjustment can be performed.

  The semiconductor substrate bonding apparatus according to the present invention preferably further includes a moving mechanism for moving the first substrate holding table and the second substrate holding table in a relatively approaching direction and a separating direction. The control unit calculates a force component generated in the moving mechanism when the first semiconductor substrate and the second semiconductor substrate are in contact with each other, and the force component and each force acting on the second substrate holding table. It is preferable to calculate the position of the center of gravity based on the component and the position at which the second substrate holding table is tilted by the first drive mechanism and the second drive mechanism. In this case, the position of the center of gravity based on the force component generated in the moving mechanism, the force components acting on the second substrate holding table, and the position at which the second substrate holding table is tilted by the first and second drive mechanisms. Can be calculated to calculate the drive amounts of the first and second drive mechanisms, so that the calculation accuracy can be improved and the position of the center of gravity can be easily calculated.

  In the semiconductor substrate bonding apparatus according to the present invention, it is further preferable that the control unit calculates a reaction force generated in the moving mechanism as a force component when the first semiconductor substrate and the second semiconductor substrate are in contact with each other. . In this way, the reaction force generated in this mechanism can be calculated as a force component using a moving mechanism that is necessary to move both semiconductor substrates in a relatively approaching direction and a separating direction. A semiconductor substrate bonding apparatus having a simple structure can be obtained.

  In the semiconductor substrate bonding apparatus according to the present invention, it is preferable that the moving mechanism is a driving mechanism using fluid pressure, and the control unit calculates a reaction force generated in the moving mechanism based on a change in fluid pressure. In this way, the reaction force can be calculated based on the change in the fluid pressure at which a minute change is easily detected, and the calculation accuracy is improved. In addition, since the inclination of the second substrate holding table can be adjusted based on the reaction force with high calculation accuracy in this way, minute inclination adjustment can be performed.

  In the semiconductor substrate bonding apparatus according to the present invention, when the load acting on the second semiconductor substrate from the first semiconductor substrate exceeds the upper limit value, the control unit includes the first substrate holding table and the second substrate holding table. It is preferable to drive the movement mechanism so that the movement mechanism moves away from each other. This makes it possible to prevent a load from damaging the semiconductor substrates from being applied to both the semiconductor substrates when the two semiconductor substrates are copied and controlled. As a result, damage to the semiconductor substrate can be prevented and yield can be improved.

  In the semiconductor substrate bonding apparatus according to the present invention, the control unit is a first substrate when the position of the center of gravity is on the origin and the load on the second semiconductor substrate does not exceed the lower limit value. It is preferable to drive the moving mechanism so that the holding table and the second substrate holding table move in a relatively approaching direction. In this way, when the two semiconductor substrates are copied and controlled, a load necessary for bonding the semiconductor substrates can be appropriately applied to both the semiconductor substrates. As a result, bonding failure due to insufficient load can be avoided, and yield can be improved.

  The semiconductor substrate bonding method according to the present invention is a semiconductor substrate bonding method for bonding the first and second semiconductor substrates to each other, and the first and second semiconductor substrates are partially in contact with each other. A calculation step of calculating a load acting on at least one of the first and second semiconductor substrates, and a portion other than a part of the first and second semiconductor substrates according to the load calculated in the calculation step A tilting step of tilting the second semiconductor substrate so that the non-contact portions of each other are close to each other, and a repeating step of repeatedly executing the calculation step and the tilting step until the first and second semiconductor substrates are parallel to each other It is characterized by including.

  In this semiconductor substrate bonding method, a load acting on at least one semiconductor substrate is calculated in the calculation step, and in the tilting step, non-contact other than a part of the first and second semiconductor substrates according to the load. The second semiconductor substrate is tilted so that the portions are close to each other, and in the repeating process, the calculation process and the tilting process are repeated until the first and second semiconductor substrates are parallel to each other. For this reason, the minute inclination of the other semiconductor substrate with respect to one semiconductor substrate is gradually reduced, the two semiconductor substrates become substantially parallel, and the two semiconductor substrates can be bonded together after increasing the parallelism of the two semiconductor substrates. It becomes possible.

  In the semiconductor substrate bonding method according to the present invention, in the calculation step, when the first semiconductor substrate contacts a part of the periphery of the second semiconductor substrate, the two crossing each other in a plan view of the second semiconductor substrate. A force component around one of the axes and a force component around the other axis different from the one axis are calculated as loads acting on the second semiconductor substrate, and in the tilting step, based on each force component Preferably, the second semiconductor substrate is tilted so that a non-contact portion other than a part of the peripheral edge of the second semiconductor substrate is close to the non-contact portion of the first semiconductor substrate. According to this configuration, the minute inclination of the second semiconductor substrate with respect to the first semiconductor substrate is used as a force component around one and the other axes of the force acting on the second substrate holding table from the second semiconductor substrate. It becomes possible to calculate, and by adjusting based on each of these force components, it becomes possible to increase the parallelism of both semiconductor substrates and bond the two semiconductor substrates together.

  According to the present invention, it is possible to provide a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method capable of bonding both semiconductor substrates by increasing the parallelism of another semiconductor substrate with respect to one semiconductor substrate.

It is the schematic which shows the structure of a semiconductor substrate bonding apparatus typically. It is the elements on larger scale which show the structure of the 2nd board | substrate holding table and a tilt table. It is a perspective view of a stage device (the configuration above the tilt table is not shown). It is the perspective view which looked at the stage apparatus (The structure above a tilt table is abbreviate | omitting illustration) from another angle. It is sectional drawing which follows the VV line of FIG. FIG. 6 is a partially enlarged view of the first drive mechanism of FIG. 5. It is a figure which shows the arrangement | positioning relationship in the XY coordinate system of a 1st drive mechanism, a 2nd drive mechanism, and a moving mechanism. It is a flowchart which shows the control method of a stage apparatus when bonding a semiconductor substrate with the semiconductor substrate bonding apparatus of FIG. It is the figure which showed the contact position T (gravity center position) of both semiconductor substrates. It is the figure which showed the inclination-angle of the 2nd semiconductor substrate around an X-axis and a Y-axis.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate bonding apparatus, 24 ... 1st board | substrate holding table, 36 ... 2nd board | substrate holding table, 46 ... 1st drive mechanism, 48 ... 2nd drive mechanism, 52 ... Moving mechanism, 52d, 68g , 70 g ... pressure gauge, 90 ... control device, O ... origin, T ... contact position (center of gravity position), Wu ... first semiconductor substrate, Wd ... second semiconductor substrate.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a schematic view schematically showing a configuration of a semiconductor substrate bonding apparatus according to the present embodiment. As shown in FIG. 1, the semiconductor substrate bonding apparatus 1 includes a vibration isolator 12, a surface plate 14, a body 16, an upper stage 20, a lower stage 30, and a control device (control unit) 90.

  The vibration isolator 12 removes vibration transmitted to the semiconductor substrate bonding apparatus 1. A surface plate 14 is provided on the vibration isolator 12. The body 16 has a side wall portion and an upper wall portion, and forms a sealed space on the surface plate 14.

  The upper stage 20 is mounted on the inner surface of the upper wall portion of the body 16. The upper stage 20 has an XYθ stage 22 and a first substrate holding table 24. The first substrate holding table 24 holds the first semiconductor substrate Wu to be bonded by electrostatic chucking or vacuum chucking. The XYθ stage 22 performs positioning in the XYθ direction of the first semiconductor substrate Wu held by the first substrate holding table 24 in a horizontal plane.

  The lower stage 30 is mounted on the surface plate 14. The lower stage 30 has an XY stage 32 and a stage device 34. The stage device 34 includes a second substrate holding table 36, a tilt table 38, a support table 45, a first driving mechanism (driving unit) 46, a second driving mechanism (driving unit) 48, a θ driving mechanism 50, and a moving mechanism 52. It has.

  In this stage device 34, the tilt table 38 is driven by the first and second drive mechanisms 46, 48, and the support table 45 is driven by the θ drive mechanism 50, whereby the placement surface 38a (ie, on the placement surface 38a). The inclination angle adjustment and the rotation angle adjustment of the second semiconductor substrate Wd) held by the second substrate holding table 36 mounted on the substrate are performed. The height position is also adjusted by the moving mechanism 52 that is an air cylinder. As shown in FIGS. 3 and 4, the X axis and the Y axis are set so as to be 90 degrees in the horizontal plane, the Z axis is set in the vertical direction, and a three-dimensional orthogonal coordinate system is set. The case will be described using the XYZ coordinate system.

  As shown in FIGS. 1 and 2, the second substrate holding table 36 holds the second semiconductor substrate Wd to be bonded. The second substrate holding table 36 includes an electrostatic chuck ESC that sucks a wafer by electrostatic force and a vacuum chuck VAC that vacuum-sucks the electrostatic chuck ESC.

  As shown in FIGS. 3 to 5, the tilt table 38 is a disk-shaped table, and has a flat mounting surface 38 a on the upper surface side for mounting the second substrate holding table 36. A convex spherical bearing surface 38b is provided on the lower surface side. The central axis L in the vertical direction of the bearing surface 38 b coincides with the central axis of the tilt table 38.

  On the side surface 38 c of the tilt table 38, an operation portion 60 having an L-shaped cross section is provided at a position in the X-axis direction when viewed from the central axis L. As shown in FIGS. 3 to 5, the operating portion 60 includes a first operating piece 60 c that protrudes in the X-axis direction at a position lower than the support table 45, and an end on the central axis L side of the first operating piece 60 c And a connecting portion 60d extending in the vertical direction for connecting the portion and the side surface 38c. Further, the side surface 38c is provided with an operation section 62 having an L-shaped cross section at a position in the Y-axis direction when viewed from the central axis L. As shown in FIG. 4, the operating portion 62 includes a second operating piece 62 c that protrudes in the Y-axis direction at a position lower than the support table 45, and an end portion and a side surface on the central axis L side of the second operating piece 62 c. And a connecting portion 62d extending in the vertical direction for connecting 38c. The first and second operating pieces 60c and 62c are rectangular plates that extend on the XY plane.

  The rectangular support table 45 is formed at the upper end of a rod 53 provided in a moving mechanism 52 that is an air cylinder. As shown in FIG. 5, a bearing surface 45 b having a concave spherical surface is formed at a substantially central portion of the upper surface of the support table 45 to support the bearing surface 38 b of the tilt table 38.

  The support table 45 is embedded with a porous portion 45c so as to form a bearing surface 45b, and a large number of minute holes are formed in the bearing surface 45b. A pipe P45 is led out from the porous portion 45c and connected to an external air pressure source (not shown). The air pressure source supplies compressed air to the porous portion 45c, and the compressed air is blown against the bearing surface 38b from a large number of holes in the bearing surface 45b. As a result, an air film is formed between the bearing surface 38b and the bearing surface 45b, and the bearing surface 38b is supported in a non-contact state without receiving resistance from the bearing surface 45b.

  On the side surface 45d of the support table, as shown in FIG. 3, an operation portion 64 having an L-shaped cross section is provided at a position opposite to the Y axis when viewed from the central axis L. The operating part 64 has a connecting part 64d that protrudes in the negative direction of the Y-axis, and a third operating piece 64c that protrudes downward from the free end of the connecting part 64d. The third operating piece 64c is a rectangular plate extending on the YZ plane.

  As shown in FIGS. 3 to 5, the first drive mechanism 46 includes a support member 66 having a support piece 66 a disposed above the first operating piece 60 c and a support piece 66 b disposed below, and a support member 66. It consists of a bellows actuator 68 extending between the piece 66a and the first operating piece 60c, and a bellows actuator 70 extending between the support piece 66b and the first operating piece 60c. The first operating piece 60 c is sandwiched between the tip of the bellows actuator 68 and the tip of the bellows actuator 70. Further, the support member 66 has a rectangular plate-like connection portion 66c for connecting the support pieces 66a and 66b, and the side surface of the connection portion 66c on the support table 45 side is fixed to the support table 45.

  As shown in FIG. 6, the bellows actuator 68 includes a bellows 68 a that can be expanded and contracted in the vertical direction, and a disk-shaped operation plate 68 b that seals the opening on the lower end side of the bellows 68 a. The opening on the upper end side of the bellows 68a is sealed by being fixed to the support piece 66a. Thus, the internal space 68c of the bellows actuator 68 is sealed by the bellows 68a, the support piece 66a, and the operation plate 68b, and the airtightness thereof is maintained.

  A shaft 68d extending upward is formed at the central portion of the operating plate 68b. The shaft 68d is movable in the vertical direction by being inserted into a guide hole of a boss 66d provided in the support piece 66a. . A hemispherical pressing portion 68e that protrudes toward the first operating piece 60c is formed at the center of the operating plate 68b, and the pressing portion 68e contacts the upper surface 60a of the first operating piece 60c. By contacting, the force generated when the bellows actuator 68 is driven in the vertical direction can be transmitted to the first operating piece 60c. Since the pressing portion 68e of the bellows actuator 68 is spherical, the pressing portion 68e makes point contact with the first operating piece 60c of the operating portion 60.

  A pipe P68 is led out from the internal space 68c of the bellows actuator 68, and is connected to a servo valve 68f provided outside. By controlling the servo valve 68f, the air in the internal space 68c can be supplied and discharged, and the amount of movement of the operating plate 68b in the vertical direction can be arbitrarily controlled in accordance with the change in the atmospheric pressure in the internal space 68c. can do.

  The bellows actuator 68 is provided with a pressure gauge 68g that continuously measures the atmospheric pressure in the internal space 68c. The measured atmospheric pressure information is sent to the control device 90. Accordingly, a change in atmospheric pressure in the internal space 68c when the first operating piece 60c is raised by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd described later are bonded to each other. It can be calculated by the control device 90. The pressure gauge 68g functions as a detection unit that detects an external force that is a source of a load, and the control device 90 can calculate a reaction force generated in the bellows actuator 68 based on the change in atmospheric pressure. Various pressure gauges described later also function as a detection unit.

  The bellows actuator 70 also has the same configuration as the bellows actuator 68 described above, and the amount of movement of the operating plate 70b in the vertical direction can be arbitrarily controlled by controlling the servo valve 70f. The pressing portion 70e has a hemispherical shape like the pressing portion 68e, and makes point contact with the lower surface 60b of the operating portion 60. When the pressing portion 70e comes into contact with the lower surface 60b of the first operating piece 60c, the force generated when the bellows actuator 70 is driven in the vertical direction can be transmitted to the first operating piece 60c. The bellows actuator 70 includes a bellows 70a, an internal space 70c, and a shaft 70d, and the internal space 70c and the servo valve 70f are connected by a pipe P70.

  Further, the bellows actuator 70 is provided with a pressure gauge 70g that continuously measures the atmospheric pressure in the internal space 70c. The measured atmospheric pressure information is sent to the control device 90. Accordingly, a change in atmospheric pressure in the internal space 70c when the first operating piece 60c is lowered by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd, which will be described later, are bonded together. It can be calculated by the control device 90. Further, based on this change in atmospheric pressure, the reaction force generated in the bellows actuator 70 can be calculated by the control device 90.

  As shown in FIG. 4, the second drive mechanism 48 has a U-shaped support member 72 having a support piece 72 a disposed above the second operating piece 62 c and a support piece 72 b disposed below. The bellows actuator 74 extends between the support piece 72a and the second operation piece 62c, and the bellows actuator 76 extends between the support piece 72b and the second operation piece 62c. The second operating piece 62 c is sandwiched between the tip of the bellows actuator 74 and the tip of the bellows actuator 76. The support member 72 has a rectangular plate-like connecting portion 72c that connects the support piece 72a and the support piece 72b, and the side surface of the connecting portion 72c on the support table 45 side is fixed to the support table 45. Moreover, the bellows actuators 74 and 76 have the same configuration as the bellows actuators 68 and 70, and are each provided with a pressure gauge that measures the atmospheric pressure in the internal space of the bellows actuators 74 and 76. The atmospheric pressure information is sent from these pressure gauges to the control device 90, and the atmospheric pressure change and reaction force generated in the bellows actuators 74 and 76 can be calculated.

  As shown in FIG. 3, the θ drive mechanism 50 has a U-shaped support having a support piece 56 a and a support piece 56 b that are spaced apart in the X-axis direction so as to sandwich the third operating piece 64 c therebetween. The member 56 includes a bellows actuator 78 extending between the support piece 56a and the third operating piece 64c, and a bellows actuator 80 extending between the support piece 56b and the third operating piece 64c. The third operating piece 64 c is sandwiched between the tip of the bellows actuator 78 and the tip of the bellows actuator 80. The support member 56 has a rectangular plate-like connection portion 56 c that connects the support piece 56 a and the support piece 56 b, and the connection portion 56 c is fixed to the upper surface 82 a of the base plate 82. The bellows actuators 78 and 80 have the same configuration as the bellows actuators 68 and 70.

  As shown in FIG. 5, the rod 53 of the moving mechanism 52, which is an air cylinder, has a disk-like piston 53a having a diameter substantially the same as the inner periphery of the cylindrical body 52a at the lower end. In the internal space of the cylindrical body 52a, pipes P84 and P86 are led out from the internal space 52b above the piston 53a and the internal space 52c below. The pipe P86 is provided with a pressure gauge 52d that continuously measures the atmospheric pressure in the lower internal space 52c. The measured atmospheric pressure information is sent to the control device 90. Therefore, the control device 90 controls the change in atmospheric pressure in the internal space 52c when the support table 45 is lowered by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd described later are bonded to each other. It can be calculated by. Further, based on this change in atmospheric pressure, the control device 90 can calculate the reaction force generated in the moving mechanism 52.

  Next, the arrangement relationship in the XY coordinate system of the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 will be described. As shown in FIG. 7 and the like, the first drive mechanism 46 and the second drive mechanism 48 are arranged at an angle of approximately 90 degrees. The first drive mechanism 46 is disposed on the X axis and performs tilt adjustment around the Y axis, and the second drive mechanism 48 is disposed on the Y axis and performs tilt adjustment around the X axis. . The two axes, the X axis and the Y axis, pass through the origin O, which is the holding center in the plan view of the tilt table 38 (the second substrate holding table 36 placed on the tilt table 38), and are centered on the origin O. They are orthogonal to each other. Further, the center of the moving mechanism 52 coincides with the central axis L, and is at the same position as the origin O in the XY coordinate system of the tilt table 38. Note that the two axes on which the first and second drive mechanisms 46 and 48 are disposed need only intersect with each other at angles other than 0 degrees and 180 degrees with the origin O as the center, and not at an angle of about 90 degrees. May be.

  3 to 5, the illustration of the configuration below the base plate 82 is omitted, but the stage device 34 having such a configuration is mounted on the XY stage 32 via the base plate 82.

  The control device 90 controls the semiconductor substrate bonding apparatus 1 including the control of the stage device 34 and the upper stage 20. Details of the control of the stage device 34 by the control device 90 will be described later.

  Next, a semiconductor substrate bonding method using the semiconductor substrate bonding apparatus 1 will be described.

  First, the first semiconductor substrate Wu to be bonded is held by the first substrate holding table 24 of the upper stage 20, and the first semiconductor substrate Wu is positioned in the XYθ direction by the XYθ stage 22. Next, the second semiconductor substrate Wd to be bonded is held by the second substrate holding table 36 of the lower stage 30, and the second semiconductor substrate Wd is positioned in the XY direction by the XY stage 32. Next, the support table 45 is driven by the θ drive mechanism 50 to position the rotational position of the second semiconductor substrate Wd around the central axis L (Z axis). These positionings are automatically controlled by the control device 90 based on detection signals from an optical system (not shown) such as a laser interferometer and a microscope.

  From this state, the process proceeds to the inclination adjustment of the second substrate holding table 36 on which the second semiconductor substrate Wd is held. A control method of the stage device 34 in this tilt adjustment will be described with reference to the flowchart of FIG.

  First, in order to bring the second semiconductor substrate Wd held on the second substrate holding table 36 into contact with the first semiconductor substrate Wu, the support table 45 is raised by a predetermined amount by the moving mechanism 52, The substrate holding table 36 is moved in a direction approaching the first substrate holding table 24 (step S1). This rise is performed by pressurizing the air pressure in the internal space 52c of the moving mechanism 52 from the first air pressure to the second air pressure via the pipe P86 and maintaining the second air pressure that is a constant pressure. . When the second semiconductor substrate Wd held on the second substrate holding table 36 and the first semiconductor substrate Wu come into contact with each other due to this rise, the atmospheric pressure in the internal space 52c is higher than the second atmospheric pressure. It becomes the 3rd atmospheric pressure which is a pressure. Each atmospheric pressure is measured by the pressure gauge 52d, and the atmospheric pressure information is sent to the control device 90 as an external force acting on the semiconductor substrates Wu and Wd. At the time of the contact, the first semiconductor substrate Wu is in contact with a part of the periphery of the second semiconductor substrate Wd, and the parts other than the part in which both the semiconductor substrates Wu and Wd are in contact are both semiconductor substrates. It becomes a non-contact part in Wu and Wd.

Next, the control device 90 calculates the atmospheric pressure change (differential pressure) ΔPz in the internal space 52c of the moving mechanism 52 as the support table 45 is raised, and determines whether or not this differential pressure is greater than zero (step S2). ). Result of the determination, if the middle of the rise, since pressure change [Delta] P _Z is the difference between the second pressure becomes zero, the process returns to step S1, and continues to rise in the support table 45 by the moving mechanism 52. On the other hand, if both the semiconductor substrate is in contact, it becomes larger than zero since the pressure change [Delta] P _Z is the difference between the third pressure and a second pressure, and proceeds to step S3.

Next, the controller 90 calculates the load F when the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact with each other. The load F is represented by the following formula (1).
Load F = ΔF _z = ΔF _B + ΔF _Ax + ΔF _Ay (1)
Here, [Delta] F _z is the reaction force in the moving mechanism 52, a value obtained by integrating the surface area SA of the piston 53a in the pressure change [Delta] P _Z in the internal space 52c. ΔF _B is a reaction force on the bearing surface 45b, and is, for example, a value obtained by adding the surface area SB of the bearing surface 45b to the atmospheric pressure change ΔP _B between the bearing surface 38b and the bearing surface 45b. [Delta] F _AX is a reaction force in the first driving mechanism 46, for example, the atmospheric pressure change [Delta] P _X in the interior space 68c or in 70c, which is a value obtained by integrating the surface area SC of the actuating plate 68b or 70b of the bellows. ΔF _AY is a reaction force in the second drive mechanism 48. For example, a value obtained by adding the surface area SD of the operating plate of the bellows actuators 74, 76 to the atmospheric pressure change ΔP _Y in the internal space of the bellows actuators 74, 76. It is. In calculating the load F, it is preferable to use ΔF _{z in} consideration of calculation accuracy and ease of calculation. However, if necessary, the total value of ΔF _B , ΔF _Ax and ΔF _Ay is used. If ΔF _B is small enough to be ignored, the total value of ΔF _Ax and ΔF _Ay may be used.

  Then, it is determined whether or not the load F is smaller than an upper limit value A determined in consideration of a value that may damage the first semiconductor substrate Wu or the second semiconductor substrate Wd (step S3). As a result, if the load F is larger than the upper limit value A, the first semiconductor substrate Wu or the second semiconductor substrate Wd may be damaged. Therefore, the process proceeds to step S4, where the support table 45 is placed by the moving mechanism 52. The second substrate holding table 36 is moved in a direction away from the first substrate holding table 24 after being fixed and lowered. On the other hand, if the load F is smaller than the upper limit A, the process proceeds to the next step S5. As the upper limit value A, for example, 1 [N] is preferably set.

In step S <b> 5, the contact position T (X _F , Y _F ) where the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact is determined by the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. Based on the positional relationship, the reaction force in each drive mechanism, and the load on the semiconductor substrate, the following calculation is performed. In calculating the contact position T, an XY coordinate system with the center as the origin O in the plan view of the tilt table 38 is set.

First, as shown in FIG. 9, the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact at one point T (X _F , Y _F ) in the XY plane, and a load F is applied to the contact portion. Considering the following moment balance equations (2) and (3): All loads F are applied to this contact position. When there is one such contact position, this contact position corresponds to the center of gravity position. When there are a plurality of contact positions, the center of gravity position is calculated from the plurality of contact positions, this center of gravity position is set as a virtual contact position, and this virtual contact position is set as the contact position T (X _F , Y _F )) As follows.
−F · X _F + ΔF _AX · X _AY = 0 (moment about Y axis) (2)
-F · Y _F + ΔF _AY · Y _AX = 0 (moment about X axis) (3)

Then, the balance equation (2) (3) are summarized based on the _{X F} and _{Y F,} the contact position _{T (X} F, _{Y F)} that the load F is acting is derived as such the following formula Each value can be calculated.
X _F = ΔF _AX · X _AY / F (4)
Y _F = ΔF _AY · Y _AX / F (5)

Next, it is determined whether or not the contact position T (X _F , Y _F ) calculated above is on the origin O (step S6). It should be noted that “X _F = Y _F = 0” in step S6 is not only completely identical, but also a position settling range (E> 0) is set and may be substantially equal within the error range (± E). Is included. As a result, when the contact position T (X _F , Y _F ) is not on the origin O, the first semiconductor substrate Wu and the second semiconductor substrate Wd are not parallel (that is, a non-contact portion between the two semiconductor substrates Wu, Wd). Therefore, in order to make both semiconductor substrates parallel, the process proceeds to steps S7 and S8.

In step S7, the drive amount (Δθ _AX ) of the rotation angle θ _X around the X axis for adjusting the second semiconductor substrate Wd in parallel with the first semiconductor substrate Wu and the rotation angle θ _Y around the Y axis A driving amount (Δθ _AY ) is calculated. In calculating each driving amount, first, as shown in FIGS. 10A and 10B, the inclination of the first semiconductor substrate Wu and the second semiconductor substrate Wd around the X axis is expressed by Δθ _X and around the Y axis. Assume the slope is Δθ _Y. Assuming that both slopes are very small, both slopes are expressed by the following equations.
Δθ _X = Z _max / Y _F (6)
Δθ _Y = −Z _max / X _F (7)
Here, Z _max is the largest value among the values assumed as the amount of deviation in the Z-axis direction in the inclination of the semiconductor substrate that is usually generated when the semiconductor substrates are bonded together.

When the rotational drive amount Δθ _AX around the X axis and the rotational drive amount Δθ _AY around the Y axis are calculated so as to be opposite to the inclination, they are expressed as the following equations (8) and (9).
Δθ _AX = −Z / Y _F (8)
Δθ _AY = Z / X _F (9)
Here, the Z, a Z _max value smaller than, and a number in the range no problem as displacement amount in the Z direction in the tilt of the semiconductor substrate which is generated when bonding the semiconductor substrate, for example, the Z _max It is a numerical value about 1/10.

Next, the rotational drive amount Δθ _AX is driven by the second drive mechanism 48 to adjust the tilt around the X axis, and the rotational drive amount Δθ _AY is driven by the first drive mechanism 46 to tilt around the Y axis. Is adjusted (step S8). As a result, the second semiconductor substrate is tilted, and a non-contact portion of the second semiconductor substrate other than a part of the peripheral edge in contact with the first semiconductor substrate approaches the non-contact portion of the first semiconductor substrate. It becomes like this. When the second drive mechanism 48 is driven, that is, when the tilt table 38 tilts around the X axis, the first operating piece 60c of the operating unit 60 rotates around the X axis. At this time, the pressing portions 68e and 70e of the bellows actuators 68 and 70 of the first drive mechanism 46 are in point contact with the upper surface 60a and the lower surface 60b of the operating piece 60c, respectively, as described above. When the operating piece 60c is rotated, the contact points of the pressing portions 68e and 70e and the operating piece 60c and the first contact points are compared with the case where the pressing portions 68e and 70e are in surface contact with the first operating piece 60c, respectively. The distance from the rotation center of the operating piece 60c becomes smaller. Thereby, when the 1st action piece 60c rotates, compared with the case where each press part 68e and 70e surface-contacts with the 1st action piece 60c, respectively, each press part 68e, The magnitude of the moment force acting on 70e is reduced. Accordingly, each of the pressing portions 68e and 70e can be reliably suppressed from moving in the direction in which the interval between the pressing portions is increased by the moment force. Therefore, the first driving mechanism 48 is driven when the second driving mechanism 48 is driven. The influence on the drive mechanism 46 can be reliably suppressed. On the other hand, since the configuration of the bellows actuators 74 and 76 of the second drive mechanism 48 is the same as that of the bellows actuators 68 and 70 of the first drive mechanism 46, the second drive is performed when the first drive mechanism 46 is driven. The influence on the mechanism 48 can also be reliably suppressed. After the tilt of the tilt table 38 around the X axis and the Y axis is adjusted by driving the first drive mechanism 46 and the second drive mechanism 48, the process returns to step S2.

Then, the process proceeds to step S3, step S5, and step S6 again, and the drive amount is calculated until X _F = Y _F = 0 in step S6, that is, until the first and second semiconductor substrates are parallel to each other. Step S7, Step S8 for driving the drive mechanism based on the calculated drive amount, Step S2, Step S3, Step S5 for calculating the contact position of the semiconductor substrate, and Step S6 are repeated. Through such control, the second semiconductor substrate Wd is gradually parallel to the first semiconductor substrate Wu based on the reaction forces generated in the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. It is trying to become. That is, based on each reaction force, a contact position corresponding to the position of the center of gravity is calculated, and based on this contact position, it is calculated whether or not both semiconductor substrates are parallel, so that the contact position approaches the origin.

If it is determined in step S6 that the contact position (X _F , Y _F ) is on the origin O, both semiconductor substrates are parallel, and the process proceeds to step S9. Then, it is determined whether or not the load F is larger than a lower limit B determined in consideration of a value sufficient for bonding the first semiconductor substrate Wu and the second semiconductor substrate Wd (step). S9). For example, 0.5 [N] is preferably set as the lower limit value B. If the load F is smaller than the lower limit B, the process returns to step S1. On the other hand, if the load F is larger than the lower limit B, the bonding is continued in this state, and the bonding process is completed after a predetermined time has elapsed.

  As described above in detail, when the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact with each other, the control device 90 of the semiconductor substrate bonding apparatus 1 according to the present embodiment has the first drive mechanism 46. The reaction forces generated in the second drive mechanism 48 and the moving mechanism 52 are calculated, and the first and second drive mechanisms 46 and 48 are repeatedly driven based on the drive amounts calculated from the reaction forces. The inclination of the second substrate holding table 36 can be adjusted so that the parallelism of the second semiconductor substrate Wd with respect to the semiconductor substrate Wu becomes equal.

  The control device 90 also includes a load F acting on a contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd, each reaction force generated in the first drive mechanism 46 and the second drive mechanism 48, Based on the position on the X-axis of the first drive mechanism 46 and the position on the Y-axis of the second drive mechanism 48, the contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd is calculated. When not on the origin, the first and second drive mechanisms 46 and 48 are repeatedly driven using the contact position so that the second semiconductor substrate Wd is parallel to the first semiconductor substrate Wu. ing. Thereby, control of the 1st and 2nd drive mechanisms 46 and 48 for inclination adjustment by control device 90 becomes easy.

  In addition, when the load acting on the second semiconductor substrate Wd from the first semiconductor substrate Wu exceeds the upper limit value, the control device 90 lowers the tilt table 38 and causes the second substrate holding table 36 to move to the first substrate. The moving mechanism 52 is driven so as to move in a direction away from the holding table 24. For this reason, it is possible to prevent the semiconductor substrates from being damaged by applying an excessive force between the semiconductor substrates to be bonded to each other.

  Further, when the load on the semiconductor substrate does not exceed the lower limit value, the control device 90 raises the tilt table 38 so that the second substrate holding table 36 moves in a direction approaching the first substrate holding table 24. Further, the moving mechanism 52 is driven. For this reason, bonding of the semiconductor substrates with an insufficient force can be avoided.

  The stage device 34 is a drive mechanism in which the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 utilize fluid pressure, for example, air pressure, and controls the reaction force based on the change in the fluid pressure. The calculation is performed by the device 90. For this reason, it is possible to detect a subtle inclination based on a change in fluid pressure at which a minute change is easy to detect, and to perform advanced inclination adjustment.

  Further, the two axes for tilting the second substrate holding table 36 around the respective axes by the first and second drive mechanisms 46 and 48 are origins which are the holding centers in the plan view of the second substrate holding table 36. And intersecting each other at an angle excluding 0 degrees and 180 degrees, for example, approximately 90 degrees, centering on the origin. Therefore, the first and second drive mechanisms 46 and 48 for tilting the second substrate holding table about each axis can operate independently, and the second substrate holding table 36 (that is, the second substrate holding table 36) The semiconductor substrate Wd) can be inclined at various inclination angles with respect to the horizontal plane. Moreover, such a three-dimensional tilt angle adjustment of the second semiconductor substrate Wd can be realized with a simple structure.

  The present invention is not limited to the above-described embodiment, and various modifications can be made. For example, in the above embodiment, the contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd is calculated based on the reaction forces generated by the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. However, if this contact position can be calculated, the contact position may be calculated using a force component other than the reaction force. In the above embodiment, the load acting on the second semiconductor substrate Wd is calculated to calculate the contact position. However, the detecting unit detects an external force acting on the first semiconductor substrate Wu on the upper stage 20 side. And the contact position may be calculated by calculating a load acting on the first semiconductor substrate Wu.

  In the above embodiment, the pressure gauge 52d is provided on the pipe P86 as shown in FIG. 5 in calculating the reaction force against the moving mechanism 52. However, if the reaction force against the moving mechanism 52 can be calculated, It is good also as a structure which provides the pressure gauge 52d in a part. Further, in calculating the reaction force against the first drive mechanism 46 and the second drive mechanism 48, as shown in FIG. 6 and the like, the pressure gauges are provided in the pipes P68, P70, etc., but the first drive mechanism 46 and As long as the reaction force with respect to the second drive mechanism 48 can be calculated, a configuration may be adopted in which a pressure gauge is provided in another portion.

  In the above-described embodiment, the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 are configured to detect the reaction force based on the fluctuation of the air pressure. A driving mechanism using another fluid may be used, and the reaction force may be detected by the fluctuation of the fluid pressure.

  In the above embodiment, the second semiconductor substrate Wd held on the lower stage 30 is raised and brought into contact with the first semiconductor substrate Wu held on the upper stage 20. The first semiconductor substrate Wu held on the upper stage 20 may be lowered and brought into contact with the second semiconductor substrate Wd held on the lower stage 30. Even in this case, advanced tilt adjustment based on the reaction force is possible.

  In the above embodiment, a weight having a weight equal to the weight of the operating portion is provided at a position opposite to the position where the operating portion 60 of the side surface 38c of the tilt table 38 is provided, and the operating portion 62 of the side surface 38c is provided. A weight having a weight equal to the weight of the operating portion can be provided at a position opposite to the provided position. In this case, the balance of the weight of the tilt table 38 in the X-axis direction and the Y-axis direction is maintained. As a result, when the bellows 68a and 70a of the bellows actuators 68 and 70 of the first drive mechanism 46 and the bellows of the bellows actuators 74 and 76 of the second drive mechanism 48 are left unloaded, the tilt Without tilting the table 38 in any direction, the tilt table 38 can be held in a posture where the mounting surface 38a of the tilt table is horizontal. Therefore, for example, compared with the case where the tilt of the tilt table 38 is adjusted by adjusting the amount of air supplied to the bellows actuators 68, 70, 74, 76, the posture of the tilt table 38 is easily returned to the initial posture. be able to.

Claims (18)

A semiconductor substrate bonding apparatus for bonding a first semiconductor substrate and a second semiconductor substrate to each other,
A drive unit for relatively moving the first semiconductor substrate and the second semiconductor substrate;
A control unit for controlling the operation of the drive unit,
The control unit is configured to apply the first to the second semiconductor substrate based on a reaction force generated in the driving unit when the first semiconductor substrate and the second semiconductor substrate partially contact each other . by the center of gravity of the load acting from the first semiconductor substrate to perform operation control of the driving unit so as to approach the origin as a holding center for holding the second semiconductor substrate, said first semiconductor substrate and the first A semiconductor substrate bonding apparatus that performs operation control of the drive unit so that non-contact parts other than the part of the two semiconductor substrates are close to each other.   The semiconductor substrate bonding apparatus according to claim 1, wherein the control unit repeatedly performs operation control of the driving unit until the first semiconductor substrate and the second semiconductor substrate are parallel to each other. A first substrate holding table for holding the first semiconductor substrate;
A second substrate holding table for holding the second semiconductor substrate so as to face the first semiconductor substrate;
The drive unit is
A first drive mechanism that tilts the second substrate holding table around one of two axes that intersect each other in plan view of the second substrate holding table;
A second drive mechanism for tilting the second substrate holding table around the other axis different from the one axis;
The controller drives the first drive when the first semiconductor substrate held by the first substrate holding table comes into contact with the second semiconductor substrate held by the second substrate holding table. The semiconductor substrate bonding apparatus according to claim 1, wherein operation control of the first drive mechanism and the second drive mechanism is performed based on reaction forces generated in the mechanism and the second drive mechanism, respectively. Wherein, based on the reaction force generated in the first driving mechanism and said second drive mechanism, the first force around the axis of the load acting from the first semiconductor substrate to the second semiconductor substrate The semiconductor substrate bonding apparatus according to claim 3, wherein a component and a force component around the other axis are calculated, and driving of the first drive mechanism and the second drive mechanism is controlled based on each force component. The two axes, the second substrate holding table according to claim 3 or 4 cross each other at an angle through the origin as a holding center in the plan view and, except for 0 degrees and 180 degrees about the origin of the The semiconductor substrate bonding apparatus described in 1. The said control part calculates the said gravity center position based on the said reaction force, The operation control of the said 1st drive mechanism and the said 2nd drive mechanism is performed so that the said gravity center position may approach the said origin. Semiconductor substrate bonding equipment.   The semiconductor substrate bonding according to claim 3, wherein the first drive mechanism is disposed on the other axis, and the second drive mechanism is disposed on the one axis. apparatus. The first drive mechanism and the second drive mechanism are drive mechanisms using fluid pressure,
The semiconductor substrate bonding apparatus according to claim 3, wherein the control unit calculates each reaction force based on a change in the fluid pressure. The driving unit includes a moving mechanism that moves the first semiconductor substrate and the second semiconductor substrate in a relatively approaching direction and a separating direction.
The control unit includes a reaction force generated in the moving mechanism and a reaction force generated in the first drive mechanism and the second drive mechanism when the first semiconductor substrate and the second semiconductor substrate contact each other. The semiconductor substrate bonding apparatus according to claim 6, wherein the center-of-gravity position is calculated based on a position where the second substrate holding table is tilted by the first driving mechanism and the second driving mechanism. The moving mechanism is a driving mechanism using fluid pressure,
The semiconductor substrate bonding apparatus according to claim 9, wherein the control unit calculates the reaction force generated in the moving mechanism based on a change in the fluid pressure.   When the load acting on the second semiconductor substrate from the first semiconductor substrate exceeds an upper limit value, the control unit causes the first semiconductor substrate and the second semiconductor substrate to move away from each other relatively. The semiconductor substrate bonding apparatus according to claim 9, wherein the moving mechanism is driven so as to move.   In the case where the position of the center of gravity is on the origin and the load on the second semiconductor substrate does not exceed a lower limit value, the control unit is configured so that the first semiconductor substrate and the second semiconductor substrate The semiconductor substrate bonding apparatus according to claim 9, wherein the moving mechanism is driven so as to move in a direction in which the semiconductor substrate relatively approaches. A semiconductor substrate bonding apparatus for bonding a first semiconductor substrate and a second semiconductor substrate to each other,
A first substrate holding table for holding the first semiconductor substrate;
A second substrate holding table for holding the second semiconductor substrate so as to face the first semiconductor substrate;
A drive unit that moves the second substrate holding table relative to the first substrate holding table;
A control unit for controlling the operation of the drive unit,
The control unit calculates a gravity center position of a load acting on the second semiconductor substrate from the first semiconductor substrate when the first semiconductor substrate and the second semiconductor substrate are in contact with each other. Then, the semiconductor substrate bonding apparatus performs operation control of the drive unit so that the position of the center of gravity approaches an origin that is a holding center in plan view of the second substrate holding table. A semiconductor substrate bonding apparatus for bonding a first semiconductor substrate and a second semiconductor substrate to each other,
A drive unit for relatively moving the first semiconductor substrate and the second semiconductor substrate;
A control unit for controlling the operation of the drive unit;
A first substrate holding table for holding the first semiconductor substrate;
A second substrate holding table for holding the second semiconductor substrate so as to face the first semiconductor substrate;
The drive unit includes a first drive mechanism that tilts the second substrate holding table around one of two axes that intersect each other in plan view of the second substrate holding table, and the one shaft A second drive mechanism for tilting the second substrate holding table around the other axis different from
When the first semiconductor substrate held by the first substrate holding table and the second semiconductor substrate held by the second substrate holding table partially contact each other, the control unit Based on the reaction force generated in each of the first drive mechanism and the second drive mechanism, the first semiconductor substrate and the second semiconductor substrate in the first semiconductor substrate and the second semiconductor substrate so that non-contact parts other than the part are close to each other. A semiconductor substrate bonding apparatus that performs operation control of one drive mechanism and the second drive mechanism. A semiconductor substrate bonding method for bonding a first semiconductor substrate and a second semiconductor substrate together,
A moving step of moving the first semiconductor substrate and the second semiconductor substrate relative to each other by a driving unit;
A calculating step of calculating a reaction force generated in the drive unit when the first semiconductor substrate and the second semiconductor substrate are partially in contact with each other by the moving step;
Based on the reaction force calculated by the calculating step, said first semiconductor substrate and the control step of the non-contact portion other than said portion of said second semiconductor substrate to control the driving unit so as to close to each other and, only including,
In the control step, the position of the center of gravity of the load acting on the second semiconductor substrate from the first semiconductor substrate approaches the origin that is a holding center for holding the second semiconductor substrate. A semiconductor substrate bonding method for performing operation control .   The semiconductor substrate bonding method according to claim 15, comprising a repeating step of repeatedly executing the calculation step and the control step until the first semiconductor substrate and the second semiconductor substrate are parallel to each other. In the calculating step, a center of gravity position of the load is calculated based on the reaction force,
Wherein in the control step, the semiconductor substrate bonding method according to claim 15 or 16 wherein the center of gravity controls the operation of the driving unit so as to approach the origin. A semiconductor substrate bonding method for bonding a first semiconductor substrate and a second semiconductor substrate together,
A moving step of moving the first semiconductor substrate and the second semiconductor substrate relative to each other by a driving unit;
A calculating step of calculating a reaction force generated in the drive unit when the first semiconductor substrate and the second semiconductor substrate are partially in contact with each other by the moving step;
A control step of controlling the drive unit based on the reaction force calculated in the calculation step so that non-contact portions other than the portion of the first semiconductor substrate and the second semiconductor substrate are close to each other. And including
The driving unit tilts the second substrate holding table around one of two axes that intersect each other in a plan view of the second substrate holding table that holds the second semiconductor substrate. A drive mechanism and a second drive mechanism for tilting the second substrate holding table around the other axis different from the one axis;
In the control step, when the first semiconductor substrate held on the first substrate holding table comes into contact with the second semiconductor substrate held on the second substrate holding table, the first driving mechanism and Based on the reaction force generated in each of the second driving mechanisms, the first driving mechanism and the first driving mechanism are arranged so that non-contact parts other than the part of the first semiconductor substrate and the second semiconductor substrate are close to each other. 2. A semiconductor substrate bonding method for controlling the operation of a drive mechanism.

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