[go: up one dir, main page]

JP5351155B2 - ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置 - Google Patents

ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置 Download PDF

Info

Publication number
JP5351155B2
JP5351155B2 JP2010516837A JP2010516837A JP5351155B2 JP 5351155 B2 JP5351155 B2 JP 5351155B2 JP 2010516837 A JP2010516837 A JP 2010516837A JP 2010516837 A JP2010516837 A JP 2010516837A JP 5351155 B2 JP5351155 B2 JP 5351155B2
Authority
JP
Japan
Prior art keywords
group
resin composition
carbon atoms
photosensitive resin
polyamide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010516837A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2009151012A1 (ja
Inventor
正志 木村
隆行 金田
基博 丹羽
竜也 平田
正樹 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei E Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Materials Corp filed Critical Asahi Kasei E Materials Corp
Priority to JP2010516837A priority Critical patent/JP5351155B2/ja
Publication of JPWO2009151012A1 publication Critical patent/JPWO2009151012A1/ja
Application granted granted Critical
Publication of JP5351155B2 publication Critical patent/JP5351155B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/06—Polyamides derived from polyamines and polycarboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Polyamides (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
JP2010516837A 2008-06-09 2009-06-05 ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置 Active JP5351155B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010516837A JP5351155B2 (ja) 2008-06-09 2009-06-05 ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008150968 2008-06-09
JP2008150968 2008-06-09
PCT/JP2009/060380 WO2009151012A1 (fr) 2008-06-09 2009-06-05 Résine polyamide, composition de résine photosensible, procédé de formation de motif en relief durci, et dispositif semi-conducteur
JP2010516837A JP5351155B2 (ja) 2008-06-09 2009-06-05 ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置

Publications (2)

Publication Number Publication Date
JPWO2009151012A1 JPWO2009151012A1 (ja) 2011-11-17
JP5351155B2 true JP5351155B2 (ja) 2013-11-27

Family

ID=41416717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010516837A Active JP5351155B2 (ja) 2008-06-09 2009-06-05 ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置

Country Status (5)

Country Link
JP (1) JP5351155B2 (fr)
KR (1) KR101187613B1 (fr)
CN (1) CN101809064B (fr)
TW (1) TWI392696B (fr)
WO (1) WO2009151012A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI430024B (zh) * 2010-08-05 2014-03-11 Asahi Kasei E Materials Corp A photosensitive resin composition, a method for manufacturing a hardened bump pattern, and a semiconductor device
JP5715440B2 (ja) * 2011-02-24 2015-05-07 旭化成イーマテリアルズ株式会社 アルカリ可溶性重合体、それを含む感光性樹脂組成物、及びその用途
JP2012194534A (ja) * 2011-02-28 2012-10-11 Fujifilm Corp 感光性組成物、感光性ソルダーレジスト組成物及び感光性ソルダーレジストフィルム、並びに、永久パターン、その形成方法及びプリント基板
WO2014003092A1 (fr) * 2012-06-29 2014-01-03 日産化学工業株式会社 Polyamide aromatique et composition filmogène le contenant
CN117070147B (zh) * 2015-11-16 2025-12-19 三井化学株式会社 用于生成半导体装置用膜的组合物以及各制造方法
CN109153884B (zh) * 2016-05-19 2021-03-09 三井化学株式会社 含金属膜形成用组合物、含金属膜形成用组合物的制造方法、半导体装置以及半导体装置的制造方法
JP6810905B2 (ja) * 2016-10-26 2021-01-13 東洋紡株式会社 凸版印刷原版用感光性樹脂組成物、及びそれから得られる凸版印刷原版
JP2018084626A (ja) * 2016-11-22 2018-05-31 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化膜の製造方法、硬化膜、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
WO2019130400A1 (fr) 2017-12-25 2019-07-04 堺ディスプレイプロダクト株式会社 Dispositif d'affichage électroluminescent organique
CN109134845B (zh) * 2018-08-09 2021-01-05 东华大学 一种交联聚酰胺、增强纤维复合材料及其制备和应用
CN113168092B (zh) * 2018-10-03 2025-09-16 艾曲迪微系统股份有限公司 感光性树脂组合物、图案固化物的制造方法、固化物、层间绝缘膜、覆盖涂层、表面保护膜及电子部件
CN109814336B (zh) * 2019-01-21 2022-05-17 深圳市道尔顿电子材料有限公司 可碱溶负性光敏聚酰亚胺树脂组合物
CN110156985B (zh) * 2019-04-30 2021-12-21 珠海派锐尔新材料有限公司 一种高流动无规共聚半芳香尼龙及其制备方法
CN114690558A (zh) * 2022-03-17 2022-07-01 苏州理硕科技有限公司 一种聚酰胺类光刻胶组合物及其制备方法和应用
CN117420732B (zh) * 2023-12-19 2024-04-16 明士(北京)新材料开发有限公司 一种负型感光性树脂组合物及其应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509177B1 (fr) * 1969-12-31 1975-04-10
JPS63182322A (ja) * 1987-01-24 1988-07-27 Matsushita Electric Works Ltd 感光性耐熱樹脂組成物
JPH01129246A (ja) * 1987-11-14 1989-05-22 Matsushita Electric Works Ltd 感光性耐熱樹脂組成物
WO2005068535A1 (fr) * 2004-01-20 2005-07-28 Asahi Kasei Emd Corporation Resine et composition a base de resine

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
ATE11774T1 (de) * 1979-12-07 1985-02-15 Fisons Plc Verfahren zur herstellung von 1,4-dihydro-4-oxo- chinolin-2-carbonsaeuren oder salzen, estern oder amiden davon und zwischenverbindungen dafuer.
JP2826940B2 (ja) * 1992-07-22 1998-11-18 旭化成工業株式会社 ｉ線露光用感光性組成物
WO2004008252A1 (fr) 2002-07-11 2004-01-22 Asahi Kasei Emd Corporation Composition de resine photosensible de type negatif, resistant fortement a la chaleur
US7563557B2 (en) * 2004-07-16 2009-07-21 Asahi Kasei Emd Corporation Polyamide
JP4776486B2 (ja) 2006-09-28 2011-09-21 旭化成イーマテリアルズ株式会社 感光性ポリアミド酸エステル組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509177B1 (fr) * 1969-12-31 1975-04-10
JPS63182322A (ja) * 1987-01-24 1988-07-27 Matsushita Electric Works Ltd 感光性耐熱樹脂組成物
JPH01129246A (ja) * 1987-11-14 1989-05-22 Matsushita Electric Works Ltd 感光性耐熱樹脂組成物
WO2005068535A1 (fr) * 2004-01-20 2005-07-28 Asahi Kasei Emd Corporation Resine et composition a base de resine

Also Published As

Publication number Publication date
TWI392696B (zh) 2013-04-11
KR101187613B1 (ko) 2012-10-05
JPWO2009151012A1 (ja) 2011-11-17
KR20100063748A (ko) 2010-06-11
TW201005002A (en) 2010-02-01
CN101809064B (zh) 2012-06-13
CN101809064A (zh) 2010-08-18
WO2009151012A1 (fr) 2009-12-17

Similar Documents

Publication Publication Date Title
JP5351155B2 (ja) ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置
JP7481548B2 (ja) 樹脂組成物、及び硬化膜の製造方法
CN102375336B (zh) 感光性树脂组合物、固化浮雕图案的制造方法及半导体装置
JP6636707B2 (ja) 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置
JP5620691B2 (ja) 感光性樹脂組成物、硬化レリーフパターンの製造方法、並びに半導体装置
JP6935982B2 (ja) 樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
TW202012455A (zh) 負型感光性樹脂組合物、與使用其之聚醯亞胺及硬化浮凸圖案之製造方法
JP4070515B2 (ja) 耐熱性樹脂前駆体組成物
JP2011123219A (ja) 感光性ポリアミド樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置
JP5121393B2 (ja) ネガ型感光性樹脂組成物
JP2019020709A (ja) 感光性樹脂組成物、ドライフィルム、硬化物、半導体素子、プリント配線板および電子部品
JP2024111098A (ja) ネガ型感光性樹脂組成物、硬化膜および化合物
JP4761989B2 (ja) ポリアミド酸エステル組成物
JP4798851B2 (ja) アルコキシシラン化合物及びその組成物
JP7502384B2 (ja) ネガ型感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
JP7693296B2 (ja) 感光性樹脂組成物、および硬化膜の製造方法
WO2024090486A1 (fr) Composition de résine photosensible, procédé de production de motif en relief durci, et dispositif à semi-conducteur
JP6138943B2 (ja) 感光性樹脂組成物、そのレリーフパターン膜、レリーフパターン膜の製造方法、レリーフパターン膜を含む電子部品又は光学製品、及び感光性樹脂組成物を含む接着剤
KR20190007387A (ko) 감광성 수지 조성물, 드라이 필름, 경화물, 반도체 소자, 프린트 배선판 및 전자 부품
JP2023023187A (ja) 感光性樹脂組成物および半導体装置
JP7471480B2 (ja) 樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
CN120848108A (zh) 感光性树脂组合物、固化浮雕图案的制造方法和半导体装置
JP2021117442A (ja) 感光性樹脂組成物

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120703

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120828

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130724

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130820

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130822

R150 Certificate of patent or registration of utility model

Ref document number: 5351155

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350