JP5206600B2 - Epoxy resin composition, prepreg, laminate, resin sheet, multilayer printed wiring board, and semiconductor device - Google Patents
Epoxy resin composition, prepreg, laminate, resin sheet, multilayer printed wiring board, and semiconductor device Download PDFInfo
- Publication number
- JP5206600B2 JP5206600B2 JP2009151517A JP2009151517A JP5206600B2 JP 5206600 B2 JP5206600 B2 JP 5206600B2 JP 2009151517 A JP2009151517 A JP 2009151517A JP 2009151517 A JP2009151517 A JP 2009151517A JP 5206600 B2 JP5206600 B2 JP 5206600B2
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- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- resin
- weight
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920005989 resin Polymers 0.000 title claims description 171
- 239000011347 resin Substances 0.000 title claims description 171
- 229920000647 polyepoxide Polymers 0.000 title claims description 131
- 239000003822 epoxy resin Substances 0.000 title claims description 130
- 239000000203 mixture Substances 0.000 title claims description 73
- 239000004065 semiconductor Substances 0.000 title claims description 50
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 69
- 239000011888 foil Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 45
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 40
- 239000011256 inorganic filler Substances 0.000 claims description 31
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 31
- -1 salt compound Chemical class 0.000 claims description 28
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 19
- 229920003986 novolac Polymers 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 17
- 239000011342 resin composition Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000454 talc Substances 0.000 claims description 9
- 229910052623 talc Inorganic materials 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 8
- 125000000962 organic group Chemical group 0.000 claims description 8
- 125000000623 heterocyclic group Chemical group 0.000 claims description 7
- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- 150000001450 anions Chemical class 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 5
- 229930003836 cresol Natural products 0.000 claims description 5
- 125000004437 phosphorous atom Chemical group 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 4
- 239000000347 magnesium hydroxide Substances 0.000 claims description 4
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 239000002966 varnish Substances 0.000 description 41
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 39
- 238000000034 method Methods 0.000 description 29
- 239000000463 material Substances 0.000 description 21
- 229910000679 solder Inorganic materials 0.000 description 20
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 238000001723 curing Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 239000013034 phenoxy resin Substances 0.000 description 15
- 229920006287 phenoxy resin Polymers 0.000 description 15
- 239000007787 solid Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000835 fiber Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000010030 laminating Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 229920001225 polyester resin Polymers 0.000 description 5
- 239000004645 polyester resin Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 238000001291 vacuum drying Methods 0.000 description 5
- 229920001342 Bakelite® Polymers 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical group [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000002759 woven fabric Substances 0.000 description 4
- NQMUGNMMFTYOHK-UHFFFAOYSA-N 1-Methoxynaphthalene Natural products C1=CC=C2C(OC)=CC=CC2=C1 NQMUGNMMFTYOHK-UHFFFAOYSA-N 0.000 description 3
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000005470 impregnation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 229920006122 polyamide resin Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 2
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 229910001593 boehmite Inorganic materials 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
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- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000007602 hot air drying Methods 0.000 description 2
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002655 kraft paper Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- JRNGUTKWMSBIBF-UHFFFAOYSA-N naphthalene-2,3-diol Chemical compound C1=CC=C2C=C(O)C(O)=CC2=C1 JRNGUTKWMSBIBF-UHFFFAOYSA-N 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
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- 229920003987 resole Polymers 0.000 description 2
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- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
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- 238000005829 trimerization reaction Methods 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- QVCUKHQDEZNNOC-UHFFFAOYSA-N 1,2-diazabicyclo[2.2.2]octane Chemical compound C1CC2CCN1NC2 QVCUKHQDEZNNOC-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- RUFZNDNBXKOZQV-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrolo[1,2-a]benzimidazole Chemical compound C1=CC=C2N(CCC3)C3=NC2=C1 RUFZNDNBXKOZQV-UHFFFAOYSA-N 0.000 description 1
- ZOQVDXYAPXAFRW-UHFFFAOYSA-N 2,5-diethyl-1h-imidazole Chemical compound CCC1=CNC(CC)=N1 ZOQVDXYAPXAFRW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
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- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- BJDUIGDNWNRBMW-UHFFFAOYSA-N 2-phenyl-1h-imidazole-4,5-diol Chemical compound N1C(O)=C(O)N=C1C1=CC=CC=C1 BJDUIGDNWNRBMW-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical group C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 1
- UIDDPPKZYZTEGS-UHFFFAOYSA-N 3-(2-ethyl-4-methylimidazol-1-yl)propanenitrile Chemical compound CCC1=NC(C)=CN1CCC#N UIDDPPKZYZTEGS-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- ALKYHXVLJMQRLQ-UHFFFAOYSA-N 3-Hydroxy-2-naphthoate Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 ALKYHXVLJMQRLQ-UHFFFAOYSA-N 0.000 description 1
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
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- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
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- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 238000004220 aggregation Methods 0.000 description 1
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- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 238000010296 bead milling Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
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- 125000002091 cationic group Chemical group 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- JAWGVVJVYSANRY-UHFFFAOYSA-N cobalt(3+) Chemical compound [Co+3] JAWGVVJVYSANRY-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- ARSRKIQSWHMOJO-UHFFFAOYSA-N cyclohexane cyclohexanone Chemical compound C1CCCCC1.C1(CCCCC1)=O.C1(CCCCC1)=O ARSRKIQSWHMOJO-UHFFFAOYSA-N 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- BTVWZWFKMIUSGS-UHFFFAOYSA-N dimethylethyleneglycol Natural products CC(C)(O)CO BTVWZWFKMIUSGS-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N ethylene glycol dimethyl ether Natural products COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910001679 gibbsite Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000944 linseed oil Substances 0.000 description 1
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- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
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- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
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- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
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- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
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- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical group C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Reinforced Plastic Materials (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
本発明は、エポキシ樹脂組成物、プリプレグ、積層板、樹脂シート、多層プリント配線板、半導体装置に関する。 The present invention relates to an epoxy resin composition, a prepreg, a laminate, a resin sheet, a multilayer printed wiring board, and a semiconductor device.
近年の電子部品、電子機器等の多種多様化、小型化、及び薄型化に伴って、それらに用いられる多層プリント配線板も小型化、薄型化が図られており、様々な構成のものが開発されている。一般に多層プリント配線板は、両面金属箔張積層板にエッチングなどの方法で回路形成を行い、絶縁層を積層し、その絶縁層表面に回路を形成し、さらに絶縁層を積層するといった方法で製造され、交互に回路と絶縁層とを積層することで製造される(例えば、特許文献1に記載)。 With the recent diversification, miniaturization, and thinning of electronic components and electronic devices, multilayer printed wiring boards used for them have been miniaturized and thinned, and various configurations have been developed. Has been. In general, multilayer printed wiring boards are manufactured by forming a circuit on a double-sided metal foil-clad laminate using an etching method, laminating an insulating layer, forming a circuit on the surface of the insulating layer, and then laminating the insulating layer. Then, it is manufactured by alternately laminating a circuit and an insulating layer (for example, described in Patent Document 1).
両面金属箔張積層板は、一般にガラス布等の基材にエポキシ樹脂やフェノール樹脂等の熱硬化性樹脂等を浸漬含浸させたプリプレグと呼ばれる絶縁層の両面に、もしくは、プリプレグを複数枚重ねた両面に、銅箔等の金属箔を張り合わせて加熱、加圧することにより、構成される(例えば、特許文献2に記載)。近年では、多層プリント配線板の薄型化の傾向に伴い、両面金属箔張積層板のプリプレグを薄くしたり、プリプレグを用いなかったりすることが検討されている。 Double-sided metal foil-clad laminates are generally laminated on both sides of an insulating layer called a prepreg in which a base material such as glass cloth is immersed and impregnated with a thermosetting resin such as epoxy resin or phenol resin, or a plurality of prepregs are stacked. It is configured by laminating metal foils such as copper foils on both sides and heating and pressing them (for example, described in Patent Document 2). In recent years, with the trend of thinning of multilayer printed wiring boards, it has been studied to make the prepreg of the double-sided metal foil-clad laminate thin or not to use prepreg.
しかしながら、薄型の多層プリント配線板を用い半導体装置を製造した場合、半導体素子と多層プリント配線板との接続部に、線熱膨張差による応力が生じ、半導体装置の信頼性に影響を及ぼすことがある。そのためプリプレグ、多層プリント配線板の絶縁層に用いられる樹脂組成物は、低熱膨張化が要求される。樹脂組成物には、一般にエポキシ樹脂が使用されるが(例えば、特許文献3に記載)、樹脂組成物の低膨張率化は、エポキシ樹脂を含む樹脂組成物に無機充填材およびシアネート樹脂(例えば、特許文献4、5に記載)を添加するという手法がとられている。 However, when a semiconductor device is manufactured using a thin multilayer printed wiring board, stress due to a difference in linear thermal expansion occurs at the connection between the semiconductor element and the multilayer printed wiring board, which may affect the reliability of the semiconductor device. is there. Therefore, the resin composition used for the prepreg and the insulating layer of the multilayer printed wiring board is required to have low thermal expansion. An epoxy resin is generally used for the resin composition (for example, described in Patent Document 3). However, the reduction of the expansion coefficient of the resin composition can be achieved by adding an inorganic filler and a cyanate resin (for example, a resin composition containing an epoxy resin). , Patent Documents 4 and 5).
また、多層プリント配線板用樹脂組成物に水酸化アルミニウムを配合することで、ドリル加工性や難燃性を向上させることができることが知られているが(例えば、特許文献6に記載)、低熱膨張化のために水酸化アルミニウムなどの比較的比表面積の多きい無機充填材を多量に配合すると、流動性が低下し、ボイドの発生する等の加工性の低下や半田耐熱性の悪化といった不具合が発生するという問題があった。 In addition, it is known that drill workability and flame retardancy can be improved by blending aluminum hydroxide into a resin composition for multilayer printed wiring boards (for example, described in Patent Document 6), but low heat If a large amount of inorganic filler with a relatively large specific surface area such as aluminum hydroxide is added for expansion, the fluidity will be reduced, resulting in poor workability such as voids and poor solder heat resistance. There was a problem that occurred.
本発明は、低熱線膨張率であり、流動性に優れるエポキシ樹脂組成物、スジムラ等外観不良のないプリプレグ、成形性、加工性に優れる積層板、成形性、耐半田性に優れる多層プリント配線板、及び信頼性に優れる半導体装置を提供するものである。 The present invention relates to an epoxy resin composition having a low coefficient of thermal expansion and excellent fluidity, a prepreg having no poor appearance such as stripes, a laminate having excellent moldability and workability, and a multilayer printed wiring board having excellent moldability and solder resistance. In addition, a semiconductor device having excellent reliability is provided.
このような目的は、下記の本発明[1]〜[15]により達成される。
[1](A)下記一般式(1)で表される構造を有するエポキシ樹脂、(B)水酸化アルミニウムおよび(C)シアネート樹脂を必須成分とすることを特徴とするエポキシ樹脂組成物。
Such an object is achieved by the following present invention [1] to [15].
[1] An epoxy resin composition comprising (A) an epoxy resin having a structure represented by the following general formula (1), (B) aluminum hydroxide and (C) a cyanate resin as essential components.
[式中 Xは水素、またはエポキシ基(グリシジルエーテル基)を、R1およびR2は、互いに独立し、水素、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される1種を表す。nは1以上の整数であり、p、qは1以上の整数であり、またp、qの値は、繰り返し単位毎に同一でも、異なっていてもよい。]
[2]前記(B)水酸化アルミニウムは、BET比表面積が1.0m2/g以上である[1]に記載のエポキシ樹脂組成物。
[3]前記(B)水酸化アルミニウムは、平均粒子径が10.0μm以下である[1]または[2]に記載のエポキシ樹脂組成物。
[4]前記(B)水酸化アルミニウムの含有量は、エポキシ樹脂組成物全体の5〜60重量%である[1]ないし[3]のいずれかに記載のエポキシ樹脂組成物。
[5][1]ないし[4]のいずれかに記載のエポキシ樹脂組成物は、さらに水酸化マグネシウム、シリカ、タルク、焼成タルク、及びアルミナよりなる群から選ばれる少なくとも1種類の無機充填材を含有するものであるエポキシ樹脂組成物。
[6]前記(A)一般式(1)で表される構造を有するエポキシ樹脂の含有量は、エポキシ樹脂組成物全体の1〜40重量%である[1]ないし[5]のいずれかに記載のエポキシ樹脂組成物。
[7]前記(C)シアネート樹脂は、フェノールノボラック型シアネート樹脂、クレゾールノボラック型シアネート樹脂、ビスフェノールA型シアネート樹脂、ビスフェノールF型シアネート樹脂、およびジシクロペンタジエン型シアネート樹脂よりなる群から選ばれる少なくとも1種類である[1]ないし[6]のいずれかに記載のエポキシ樹脂組成物。
[8]前記(C)シアネート樹脂の含有量は、エポキシ樹脂組成物全体の3〜50重量%である[1]ないし[7]のいずれかに記載のエポキシ樹脂組成物。
[9][1]ないし[8]のいずれかのエポキシ樹脂組成物は、さらに(D)オニウム塩化合物を必須成分とするエポキシ樹脂組成物。
[10]前記(D)オニウム塩化合物は、下記一般式(2)で表される化合物である[9]に記載のエポキシ樹脂組成物。
[Wherein X is hydrogen or an epoxy group (glycidyl ether group), R 1 and R 2 are independent of each other, and are hydrogen, methyl group, ethyl group, propyl group, butyl group, phenyl group, and benzyl group. 1 type selected from. n is an integer of 1 or more, p and q are integers of 1 or more, and the values of p and q may be the same or different for each repeating unit. ]
[2] The epoxy resin composition according to [1], wherein the (B) aluminum hydroxide has a BET specific surface area of 1.0 m 2 / g or more.
[3] The epoxy resin composition according to [1] or [2], wherein the (B) aluminum hydroxide has an average particle size of 10.0 μm or less.
[4] The epoxy resin composition according to any one of [1] to [3], wherein the content of (B) aluminum hydroxide is 5 to 60% by weight of the entire epoxy resin composition.
[5] The epoxy resin composition according to any one of [1] to [4] further includes at least one inorganic filler selected from the group consisting of magnesium hydroxide, silica, talc, calcined talc, and alumina. An epoxy resin composition to be contained.
[6] The content of the epoxy resin having the structure represented by the general formula (1) (A) is 1 to 40% by weight of the whole epoxy resin composition. The epoxy resin composition as described.
[7] The (C) cyanate resin is at least one selected from the group consisting of a phenol novolac type cyanate resin, a cresol novolac type cyanate resin, a bisphenol A type cyanate resin, a bisphenol F type cyanate resin, and a dicyclopentadiene type cyanate resin. The epoxy resin composition according to any one of [1] to [6], which is a kind.
[8] The epoxy resin composition according to any one of [1] to [7], wherein the content of the (C) cyanate resin is 3 to 50% by weight of the entire epoxy resin composition.
[9] The epoxy resin composition according to any one of [1] to [8] is an epoxy resin composition further comprising (D) an onium salt compound as an essential component.
[10] The epoxy resin composition according to [9], wherein the (D) onium salt compound is a compound represented by the following general formula (2).
[11][1]ないし[10]のいずれかに記載のエポキシ樹脂組成物を基材に含浸させてなるプリプレグ。
[12][11]に記載のプリプレグを少なくとも1枚以上重ね合わせた積層体の少なくとも片面に金属箔を有する積層板。
[13][1]ないし[10]のいずれかに記載のエポキシ絶縁樹脂組成物よりなる絶縁層をフィルム上、又は金属箔上に形成してなる樹脂シート。
[14][11]に記載のプリプレグ、[12]に記載の積層板、および[13]に記載の樹脂シートからなる群より選ばれる少なくとも1つを用いて作製される多層プリント配線板。
[15][14]に記載の多層プリント配線板に半導体素子を搭載してなる半導体装置。
[11] A prepreg obtained by impregnating a base material with the epoxy resin composition according to any one of [1] to [10].
[12] A laminate having a metal foil on at least one side of a laminate obtained by superposing at least one prepreg according to [11].
[13] A resin sheet obtained by forming an insulating layer made of the epoxy insulating resin composition according to any one of [1] to [10] on a film or a metal foil.
[14] A multilayer printed wiring board produced by using at least one selected from the group consisting of the prepreg according to [11], the laminate according to [12], and the resin sheet according to [13].
[15] A semiconductor device comprising a semiconductor element mounted on the multilayer printed wiring board according to [14].
本発明のエポキシ樹脂組成物は、流動性に優れ、硬化物にした場合、低熱線膨張率である。また、当該エポキシ樹脂組成物を用いたプリプレグは、スジムラ等外観不良がなく、成形性、加工性に優れる積層板を提供することができる。さらに当該樹脂組成物を用いた成形性、耐半田性に優れる多層プリント配線板、及び信頼性に優れる半導体装置を提供するものである。 The epoxy resin composition of the present invention is excellent in fluidity and has a low coefficient of linear thermal expansion when formed into a cured product. Moreover, the prepreg using the said epoxy resin composition does not have appearance defects, such as a stripe, and can provide the laminated board which is excellent in a moldability and workability. Furthermore, the present invention provides a multilayer printed wiring board excellent in moldability and solder resistance using the resin composition, and a semiconductor device excellent in reliability.
以下に、本発明のエポキシ樹脂組成物、プリプレグ、積層板、樹脂シート、多層プリント配線板、半導体装置について詳細に説明する。 The epoxy resin composition, prepreg, laminate, resin sheet, multilayer printed wiring board, and semiconductor device of the present invention will be described in detail below.
まず、本発明のエポキシ樹脂組成物について説明する。
前記エポキシ樹脂組成物に用いられるエポキシ樹脂は(A)下記一般式(1)で表されるエポキシ樹脂を含有する。
First, the epoxy resin composition of the present invention will be described.
The epoxy resin used for the epoxy resin composition contains (A) an epoxy resin represented by the following general formula (1).
[式中 Xは水素、またはエポキシ基(グリシジルエーテル基)を、R1およびR2は、水素、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される1種を表す。nは1以上の整数であり、p、qは1以上の整数であり、またp、qの値は、繰り返し単位毎に同一でも、異なっていてもよい。]
Wherein X is hydrogen or an epoxy group (glycidyl ether group), and R 1 and R 2 are selected from hydrogen, methyl group, ethyl group, propyl group, butyl group, phenyl group, and benzyl group 1 type is represented. n is an integer of 1 or more, p and q are integers of 1 or more, and the values of p and q may be the same or different for each repeating unit. ]
前記(A)一般式(1)で表されるエポキシ樹脂を使用することで、前記(A)一般式(1)で表されるエポキシ樹脂と、(C)のシアネート樹脂との相溶性が良好になるとともに、樹脂成分に対する(B)水酸化アルミニウムの分散性が良好となり、高充填が可能となる。また、樹脂成分と、(B)水酸化アルミニウムとが分離しないようになる。これにより、(C)のシアネート樹脂、(B)水酸化アルミニウムを使用することで、線膨張係数を低くすることができるとともに、プリプレグ等のシート状物を作製した際のボイドやスジムラの発生を防止でき、表面を平滑化することができる。
これに加え、前記(A)一般式(1)で表されるエポキシ樹脂を用いることにより、比較的比表面積の大きい(B)水酸化アルミニウムを含有しても、低溶融粘度化できる。そのため、積層板等を製造する際の加工性に優れたものとなる。
なお、前記(A)一般式(1)で表されるエポキシ樹脂を使用せず、他の構造のエポキシ樹脂を使用した場合において、低溶融粘度化した場合には、プリプレグ等のように、シート状に成形した際に、樹脂成分と水酸化アルミニウム等の無機充填材が分離しやすくなり、スジムラが発生しやすいものとなってしまう。
By using the epoxy resin represented by the general formula (1), the compatibility between the epoxy resin represented by the general formula (1) and the cyanate resin (C) is good. In addition, the dispersibility of (B) aluminum hydroxide in the resin component becomes good, and high filling becomes possible. Further, the resin component and (B) aluminum hydroxide are not separated. Thus, by using the cyanate resin (C) and (B) aluminum hydroxide, the linear expansion coefficient can be lowered, and the generation of voids and streak irregularities when a sheet-like material such as a prepreg is produced. And the surface can be smoothed.
In addition, by using the epoxy resin represented by the general formula (1), the melt viscosity can be lowered even when (B) aluminum hydroxide having a relatively large specific surface area is contained. Therefore, it becomes excellent in workability when manufacturing a laminated board or the like.
In the case where the epoxy resin represented by the general formula (1) is not used and an epoxy resin having another structure is used and the melt viscosity is lowered, a sheet such as a prepreg is used. When formed into a shape, the resin component and the inorganic filler such as aluminum hydroxide are easily separated, and uneven stripes are likely to occur.
前記(A)一般式(1)で表されるエポキシ樹脂の含有量は、特に限定されないが、前記エポキシ樹脂組成物全体の1〜40重量%が好ましく、2〜35重量%がさらに好ましい。最も好ましくは、5〜30重量%が最も好ましい。下限値未満の場合には、無機充填材成分と樹脂成分とが各々分離してしまう場合があり、上限値を超える場合には、シアネート樹脂及び無機充填材の相対量が少なくなるために低熱膨張化が難しくなる可能性がある。 The content of the epoxy resin represented by (A) the general formula (1) is not particularly limited, but is preferably 1 to 40% by weight, and more preferably 2 to 35% by weight of the entire epoxy resin composition. Most preferably, 5-30% by weight is most preferred. If it is less than the lower limit value, the inorganic filler component and the resin component may be separated from each other. If the upper limit value is exceeded, the relative amount of the cyanate resin and the inorganic filler is reduced, so the low thermal expansion. May become difficult.
前記エポキシ樹脂組成物は、(B)水酸化アルミニウムを含有する。水酸化アルミニウムを含有することにより、ドリル加工性、難燃性、低熱膨張性の優れたものとすることができる。無機充填材として一般的に用いられるシリカを用いた場合は、低熱膨張性は得られるものの、シリカの硬度が高く、ドリル加工性が劣るものとなる。また比較的軟らかいタルクを用いた場合、十分な難燃性や低熱膨張性が得られない。 The epoxy resin composition contains (B) aluminum hydroxide. By containing aluminum hydroxide, it can be excellent in drill workability, flame retardancy, and low thermal expansion. When silica that is generally used as an inorganic filler is used, low thermal expansion is obtained, but the hardness of silica is high and drill workability is poor. When relatively soft talc is used, sufficient flame retardancy and low thermal expansion cannot be obtained.
前記(B)水酸化アルミニウムは、BET比表面積が、1.0m2/g以上であること好ましい。より好ましくは、1.5〜10.0m2/gであり、最も好ましくは、2.0〜7.0m2/gである。BET比表面積が下限値未満であると、粒子径が大きくなりすぎるため、ワニスへの分散が困難になる可能性があり、上限値を超えると、樹脂ワニスの粘度が高くなりすぎ、高充填化することが難しくなる。通常のエポキシ樹脂を用いた場合は、これほどBET比表面積が大きいものを高充填化することは困難だが、前記(A)一般式(1)で表されるエポキシ樹脂を使用することにより高充填化することが可能となる。BET比表面積は、例えば、Micromeritics社製トライスター3000などの比表面積測定装置を用いて行うことができる。 The (B) aluminum hydroxide preferably has a BET specific surface area of 1.0 m 2 / g or more. More preferably, it is 1.5-10.0 m < 2 > / g, Most preferably, it is 2.0-7.0 m < 2 > / g. If the BET specific surface area is less than the lower limit value, the particle size becomes too large, so that dispersion into the varnish may be difficult. If the upper limit value is exceeded, the viscosity of the resin varnish becomes too high and the filling is increased. It becomes difficult to do. When using a normal epoxy resin, it is difficult to achieve a high filling with such a large BET specific surface area. However, by using the epoxy resin represented by the general formula (1), the high filling can be achieved. Can be realized. The BET specific surface area can be measured by using a specific surface area measuring device such as Tristar 3000 manufactured by Micromeritics.
前記(B)水酸化アルミニウムの平均粒子径は、0.5〜10μmであることが好ましい。より好ましくは1.0〜5.0μmであり、最も好ましくは1.5〜3.0μmである。平均粒子径が下限値未満であると、フィラーを均一に分散することが困難であり、凝集等の不具合が発生するため好ましくなく、上限値を超えると、樹脂成分と水酸化アルミニウム粒子が分離しやすくなり、プリプレグ作製時や樹脂シート作製時にスジムラなどが発生する原因となるため好ましくない。平均粒子径は、例えば、島津製作所製SALD−7100などのレーザー回折式粒度分布測定装置を用いて行うことができる。 The average particle diameter of (B) aluminum hydroxide is preferably 0.5 to 10 μm. More preferably, it is 1.0-5.0 micrometers, Most preferably, it is 1.5-3.0 micrometers. If the average particle size is less than the lower limit, it is difficult to uniformly disperse the filler, and problems such as aggregation occur, which is not preferable. If the upper limit is exceeded, the resin component and aluminum hydroxide particles are separated. This is not preferable because it becomes easy to cause streaks during prepreg production or resin sheet production. An average particle diameter can be performed using laser diffraction type particle size distribution measuring apparatuses, such as Shimadzu Corporation SALD-7100, for example.
前記(B)水酸化アルミニウムの種類としては特に限定されないが、例えばAl2O3・3H2Oで表されるギブサイト及びAl2O3・H2Oで表されるベーマイトなどが挙げられる。これらの水酸化アルミニウムは、高温で脱水反応を起こすため、エポキシ樹脂組成物の難燃性を向上させることができる。 Wherein (B) is not particularly limited as the type of aluminum hydroxide, such as boehmite and the like represented by the gibbsite and Al 2 O 3 · H 2 O as represented by, for example Al 2 O 3 · 3H 2 O . Since these aluminum hydroxides cause a dehydration reaction at a high temperature, the flame retardancy of the epoxy resin composition can be improved.
前記(B)水酸化アルミニウムの含有量としては特に限定されないが、エポキシ樹脂組成物中5〜60重量%が好ましく、さらに10〜50重量%が好ましい。最も好ましくは15〜40重量%である。水酸化アルミニウムの含有量が下限値未満であると、難燃性や低熱膨張性などの効果が得られず、上限値を超えると、樹脂中への分散が困難になり、粒子が凝集して不具合を起こす恐れがあるため好ましくない。 Although it does not specifically limit as content of the said (B) aluminum hydroxide, 5 to 60 weight% is preferable in an epoxy resin composition, Furthermore, 10 to 50 weight% is preferable. Most preferably, it is 15 to 40% by weight. If the content of aluminum hydroxide is less than the lower limit, effects such as flame retardancy and low thermal expansion cannot be obtained, and if the content exceeds the upper limit, dispersion in the resin becomes difficult and the particles aggregate. This is not preferable because it may cause a malfunction.
本発明のエポキシ樹脂組成物は、水酸化アルミニウム以外にさらに無機充填材を含むことができる。無機充填材の種類としては特に限定されないが、例えば、水酸化マグネシウム、シリカ、タルク、焼成タルク、及びアルミナなどが挙げられる。この中でも、シリカが低熱膨張性に優れ、特に好ましい。 The epoxy resin composition of the present invention can further contain an inorganic filler in addition to aluminum hydroxide. Although it does not specifically limit as a kind of inorganic filler, For example, magnesium hydroxide, a silica, a talc, a baking talc, an alumina etc. are mentioned. Among these, silica is particularly preferable because of its excellent low thermal expansion.
本発明のエポキシ樹脂組成物中の、水酸化アルミニウムとその他の無機充填材の合計含有量は特に限定されないが、エポキシ樹脂組成物中20〜85重量%が好ましく、さらに30〜75重量%が好ましい。最も好ましくは40〜70重量%である。無機充填材の含有量が下限値未満であると、低熱膨張性の効果が得られず、上限値を超えると、樹脂組成物の流動性が低下し、成形性が悪くなるため好ましくない。 The total content of aluminum hydroxide and other inorganic fillers in the epoxy resin composition of the present invention is not particularly limited, but is preferably 20 to 85% by weight, more preferably 30 to 75% by weight in the epoxy resin composition. . Most preferably, it is 40 to 70% by weight. When the content of the inorganic filler is less than the lower limit value, the effect of low thermal expansion cannot be obtained, and when the content exceeds the upper limit value, the fluidity of the resin composition is lowered and the moldability is deteriorated.
本発明のエポキシ樹脂組成物は、(C)シアネート樹脂を含有することによって、エポキシ樹脂のみでは達成することのできない耐熱性及び低熱膨張性を付与させることができる。シアネート樹脂を含有しない場合は十分な耐熱性、低熱膨張性が得られず、信頼性が低下するため、好ましくない。ここで、シアネート樹脂は、例えばハロゲン化シアン化合物とフェノール類とを反応させ、必要に応じて加熱等の方法でプレポリマー化することにより得ることができる。具体的には、フェノールノボラック型シアネート樹脂、クレゾールノボラック型シアネート樹脂等のノボラック型シアネート樹脂、ビスフェノールA型シアネート樹脂、ビスフェノールE型シアネート樹脂、テトラメチルビスフェノールF型シアネート樹脂等のビスフェノール型シアネート樹脂、およびジシクロペンタジエン型シアネート樹脂等を挙げることができる。これらのシアネート樹脂を使用した樹脂組成物よりなるプリント配線板は、特に加熱時における剛性に優れるので、半導体素子実装時の信頼性に優れる。 By containing the (C) cyanate resin, the epoxy resin composition of the present invention can impart heat resistance and low thermal expansion that cannot be achieved by the epoxy resin alone. When the cyanate resin is not contained, sufficient heat resistance and low thermal expansion cannot be obtained, and the reliability is lowered, which is not preferable. Here, the cyanate resin can be obtained by, for example, reacting a halogenated cyanide compound with a phenol and prepolymerizing it by a method such as heating as necessary. Specifically, phenol novolac type cyanate resin, novolak type cyanate resin such as cresol novolak type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, bisphenol type cyanate resin such as tetramethylbisphenol F type cyanate resin, and the like Examples include dicyclopentadiene type cyanate resin. Since a printed wiring board made of a resin composition using these cyanate resins is excellent in rigidity particularly during heating, it is excellent in reliability when mounting a semiconductor element.
前記(C)シアネート樹脂の重量平均分子量は、特に限定されないが、重量平均分子量5.0×102〜4.5×103が好ましく、特に6.0×102〜3.0×103が好ましい。重量平均分子量が下限値未満であるとプリプレグを作製した場合にタック性が生じ、プリプレグ同士が接触したとき互いに付着したり、樹脂の転写が生じたりする場合がある。また、重量平均分子量が上限値を超えると反応が速くなりすぎ、特に積層板に用いた場合、成形不良が生じることがある。
前記(C)シアネート樹脂等の重量平均分子量は、例えばGPC(ゲルパーミエーションクロマトグラフィー、標準物質:ポリスチレン換算)で測定することができる。
The weight average molecular weight of the (C) cyanate resin is not particularly limited, but the weight average molecular weight is preferably 5.0 × 10 2 to 4.5 × 10 3 , particularly 6.0 × 10 2 to 3.0 × 10 3. Is preferred. If the weight average molecular weight is less than the lower limit, tackiness may occur when the prepreg is produced, and the prepreg may adhere to each other or transfer of the resin may occur. Moreover, when a weight average molecular weight exceeds an upper limit, reaction will become quick too much, and when it uses for a laminated board especially, a shaping | molding defect may arise.
The weight average molecular weight of the (C) cyanate resin and the like can be measured by, for example, GPC (gel permeation chromatography, standard substance: converted to polystyrene).
なお、前記(C)シアネート樹脂としては、プレポリマー化したものも用いることができる。すなわち、シアネート樹脂を単独で用いてもよいし、重量平均分子量の異なるシアネート樹脂を併用したり、シアネート樹脂とそのプレポリマーとを併用したりすることもできる。
ここでプレポリマーとは、通常、上記シアネート樹脂を加熱反応などにより、例えば3量化することで得られるものであり、エポキシ樹脂組成物の成形性、流動性を調整するために好ましく使用されるものである。
プレポリマーは、特に限定されないが、例えば、3量化率が20〜50重量%であるものを用いることが好ましい。この3量化率は、例えば赤外分光分析装置を用いて求めることができる。
また、前記(C)シアネート樹脂は、特に限定されないが、1種類を単独で用いることもできるし、異なる重量平均分子量を有する2種類以上を併用したり、1種類または2種類以上のシアネート樹脂と、それらのプレポリマーを併用したりすることもできる。
In addition, as said (C) cyanate resin, what prepolymerized can also be used. That is, a cyanate resin may be used alone, a cyanate resin having a different weight average molecular weight may be used in combination, or a cyanate resin and a prepolymer thereof may be used in combination.
Here, the prepolymer is usually obtained by, for example, trimerizing the cyanate resin by a heat reaction or the like, and is preferably used for adjusting the moldability and fluidity of the epoxy resin composition. It is.
Although a prepolymer is not specifically limited, For example, it is preferable to use what a trimerization rate is 20 to 50 weight%. This trimerization rate can be determined using, for example, an infrared spectroscopic analyzer.
Further, the (C) cyanate resin is not particularly limited, but one kind can be used alone, two or more kinds having different weight average molecular weights can be used in combination, or one kind or two kinds or more of the cyanate resin can be used. These prepolymers can also be used in combination.
前記(C)シアネート樹脂の含有量は、特に限定されないが、前記エポキシ樹脂組成物全体の3〜50重量%が好ましく、なかでも、5〜40重量%が好ましく、プリプレグを作製する場合等においては、さらに10〜30重量%が好ましい。含有量が下限値未満であるとシアネート樹脂の耐熱性向上効果が十分でない場合があり、上限値を超えるとプリプレグ等の成型品の強度が低下する場合がある。
なお前記(A)一般式(1)で表されるエポキシ樹脂を使用せず、他のエポキシ樹脂とシアネート樹脂とを併用した場合、樹脂組成物全体に対し、3重量%以上のシアネート樹脂を含有させた場合において、プリプレグ作製時、及び樹脂シート作製時にスジムラの発生が顕著となることがわかっている。
The content of the (C) cyanate resin is not particularly limited, but is preferably 3 to 50% by weight of the entire epoxy resin composition, and more preferably 5 to 40% by weight. In the case of preparing a prepreg, etc. Furthermore, 10 to 30% by weight is preferable. If the content is less than the lower limit, the heat resistance improvement effect of the cyanate resin may not be sufficient, and if it exceeds the upper limit, the strength of a molded product such as a prepreg may be reduced.
When (A) the epoxy resin represented by the general formula (1) is not used and another epoxy resin and a cyanate resin are used in combination, 3% by weight or more of the cyanate resin is contained with respect to the entire resin composition. In such a case, it has been found that the occurrence of streaks becomes prominent during prepreg production and resin sheet production.
本発明のエポキシ樹脂組成物は、さらに熱硬化性樹脂(実質的にハロゲンを含まない)を併用することができる。前記熱硬化性樹脂は、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビスフェノールE型エポキシ樹脂、ビスフェノールM型エポキシ樹脂、ビスフェノールP型エポキシ樹脂、ビスフェノールZ型エポキシ樹脂等のビスフェノール型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラックエポキシ樹脂等のノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、アリールアルキレン型エポキシ樹脂、ナフタレン型エポキシ樹脂、アントラセン型エポキシ樹脂、フェノキシ型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ノルボルネン型エポキシ樹脂、アダマンタン型エポキシ樹脂、フルオレン型エポキシ樹脂等のエポキシ樹脂、ユリア(尿素)樹脂、メラミン樹脂等のトリアジン環を有する樹脂、不飽和ポリエステル樹脂、ビスマレイミド樹脂、ポリウレタン樹脂、ジアリルフタレート樹脂、シリコーン樹脂、ベンゾオキサジン環を有する樹脂等が挙げられる。
これらの中の1種類を単独で用いることもできるし、2種類以上を併用したりすることもできる。
The epoxy resin composition of the present invention can be used in combination with a thermosetting resin (substantially free of halogen). Examples of the thermosetting resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol E type epoxy resin, bisphenol M type epoxy resin, bisphenol P type epoxy resin, and bisphenol Z type epoxy resin. Bisphenol type epoxy resin, phenol novolac type epoxy resin, cresol novolac epoxy resin, etc. novolak type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, arylalkylene type epoxy resin, naphthalene type epoxy resin, anthracene type epoxy resin , Phenoxy type epoxy resin, dicyclopentadiene type epoxy resin, norbornene type epoxy resin, adamantane type epoxy resin, fluorene type epoxy Epoxy resins such as Si resin, urea (urea) resin, triazine ring resin such as melamine resin, unsaturated polyester resin, bismaleimide resin, polyurethane resin, diallyl phthalate resin, silicone resin, resin having benzoxazine ring, etc. Can be mentioned.
One of these can be used alone, or two or more can be used in combination.
本発明のエポキシ樹脂組成物は、必要に応じて、フェノール樹脂、または硬化促進剤を用いることができる。またフェノール樹脂と硬化促進剤とを併用してもよい。 The epoxy resin composition of this invention can use a phenol resin or a hardening accelerator as needed. Moreover, you may use together a phenol resin and a hardening accelerator.
前記フェノール樹脂は、特に限定されないが、例えばフェノールノボラック樹脂、クレゾールノボラック樹脂、ビスフェノールAノボラック樹脂、アリールアルキレン型ノボラック樹脂等のノボラック型フェノール樹脂、未変性のレゾールフェノール樹脂、桐油、アマニ油、クルミ油等で変性した油変性レゾールフェノール樹脂等のレゾール型フェノール樹脂が挙げられる。これらの中の1種類を単独で用いることもできるし、異なる重量平均分子量を有する2種類以上を併用したり、1種類または2種類以上の前述した樹脂と、それらのプレポリマーを併用したりすることもできる。これらの中でも特に、アリールアルキレン型フェノール樹脂が好ましい。これにより、さらに吸湿半田耐熱性を向上させることができる。 The phenol resin is not particularly limited. For example, a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, an arylalkylene type novolak resin or other novolak type phenol resin, an unmodified resole phenol resin, tung oil, linseed oil, walnut oil And resol type phenolic resins such as oil-modified resol phenolic resins modified with the above. One of these may be used alone, or two or more having different weight average molecular weights may be used in combination, or one or more of the above-described resins may be used in combination with their prepolymer. You can also. Among these, arylalkylene type phenol resins are particularly preferable. Thereby, moisture absorption solder heat resistance can be improved further.
前記硬化促進剤は、特に限定されないが、例えばナフテン酸亜鉛、ナフテン酸コバルト、オクチル酸スズ、オクチル酸コバルト、ビスアセチルアセトナートコバルト(II)、トリスアセチルアセトナートコバルト(III)等の有機金属塩、トリエチルアミン、トリブチルアミン、ジアザビシクロ[2,2,2]オクタン等の3級アミン類、2−メチルイミダゾール、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、2−エチル−4−エチルイミダゾール、1−ベンジルー2−メチルイミダゾール、1−ベンジルー2−フェニルイミダゾール、2−ウンデシルイミダゾール、1−シアノエチルー2−エチルー4−メチルイミダゾール、1−シアノエチルー2−ウンデシルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシイミダゾール、2−フェニル−4,5−ジヒドロキシイミダゾール、2,3−ジヒドロー1H−ピロロ(1,2−a)ベンズイミダゾール等のイミダゾール化合物、フェノール、ビスフェノールA、ノニルフェノール等のフェノール化合物、酢酸、安息香酸、サリチル酸、パラトルエンスルホン酸等の有機酸等、またはこの混合物が挙げられる。これらの中の誘導体も含めて1種類を単独で用いることもできるし、これらの誘導体も含めて2種類以上を併用したりすることもできる。
これらの硬化促進剤のなかでも、特にイミダゾール化合物が好ましい。これにより、樹脂組成物をプリプレグとし、半導体装置に使用した場合の絶縁性、半田耐熱性を高めることができる。
The curing accelerator is not particularly limited. For example, organic metal salts such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III). , Tertiary amines such as triethylamine, tributylamine, diazabicyclo [2,2,2] octane, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-ethyl-4-ethylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 2-phenyl-4-methyl- 5-hide Imidazole compounds such as xylimidazole, 2-phenyl-4,5-dihydroxyimidazole, 2,3-dihydro-1H-pyrrolo (1,2-a) benzimidazole, phenolic compounds such as phenol, bisphenol A and nonylphenol, acetic acid, benzoic acid Examples thereof include acids, organic acids such as salicylic acid and p-toluenesulfonic acid, and mixtures thereof. One of these can be used alone, including derivatives thereof, or two or more of these can be used in combination.
Among these curing accelerators, imidazole compounds are particularly preferable. Thereby, the insulation and solder heat resistance when the resin composition is used as a prepreg for a semiconductor device can be improved.
前記イミダゾール化合物としては、例えば、1−ベンジル−2−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、2−エチル−4−メチルイミダゾール、2,4−ジアミノ−6−〔2’−メチルイミダゾリル−(1’)〕−エチル−s−トリアジン、2,4−ジアミノ−6−(2’−ウンデシルイミダゾリル)−エチル−s−トリアジン、2,4−ジアミノ−6−〔2’−エチル−4−メチルイミダゾリル−(1’)〕−エチル−s−トリアジン、2−フェニルー4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチルー5−ヒドロキシメチルイミダゾールなどを挙げることができる。
これらの中でも、1−ベンジル−2−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、及び、2−エチル−4−メチルイミダゾールが好ましい。これらのイミダゾール化合物は、樹脂成分に対し特に優れた相溶性を有することで、均一性の高い硬化物が得られる。
Examples of the imidazole compound include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-ethyl-4-methylimidazole, 2,4-diamino- 6- [2′-Methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- (2′-undecylimidazolyl) -ethyl-s-triazine, 2,4-diamino- 6- [2′-ethyl-4-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc. Can be mentioned.
Among these, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, and 2-ethyl-4-methylimidazole are preferable. These imidazole compounds have particularly excellent compatibility with the resin component, whereby a highly uniform cured product can be obtained.
本発明のエポキシ樹脂組成物は、前記硬化促進剤に代えて、または、前記硬化促進剤とともに下記一般式(2)で表される前記(D)オニウム塩化合物を含むことが好ましい。 The epoxy resin composition of the present invention preferably contains the (D) onium salt compound represented by the following general formula (2) together with the curing accelerator or together with the curing accelerator.
(式中、Pはリン原子、R1、R2、R3及びR4は、それぞれ、置換もしくは無置換の芳香環又は複素環を有する有機基、あるいは置換もしくは無置換の脂肪族基を示し、互いに同一であっても異なっていてもよい。A-は分子外に放出しうるプロトンを少なくとも1個以上分子内に有するn(n≧1)価のプロトン供与体のアニオン、又はその錯アニオンを示す。)
(Wherein P represents a phosphorus atom, R 1 , R 2 , R 3 and R 4 each represents an organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring, or a substituted or unsubstituted aliphatic group. May be the same as or different from each other, and A − represents an anion of an n (n ≧ 1) -valent proton donor having at least one proton that can be released outside the molecule, or a complex anion thereof. Is shown.)
前記一般式(2)で表される化合物は、例えば特開2004−231765に記載の方法で合成することができる。一例を挙げると、4,4’−ビスフェノールSとテトラフェニルホスホニウムブロミドとイオン交換水を仕込み、加熱撹拌しながら水酸化ナトリウム水溶液を滴下。析出する結晶を濾過、水洗、真空乾燥することにより精製して得ることができる。 The compound represented by the general formula (2) can be synthesized, for example, by the method described in JP-A-2004-231765. For example, 4,4'-bisphenol S, tetraphenylphosphonium bromide, and ion-exchanged water are added, and an aqueous sodium hydroxide solution is added dropwise while stirring with heating. The precipitated crystals can be purified by filtration, washing with water and vacuum drying.
また前記(D)オニウム塩化合物は、下記一般式(3)で表される化合物が好ましい。 The (D) onium salt compound is preferably a compound represented by the following general formula (3).
(式中、Pは、リン原子、R1、R2、R3及びR4は、それぞれ、置換もしくは無置換の芳香環または複素環を有する有機基あるいは置換もしくは無置換の脂肪族基を示し、互いに同一であっても異なっていてもよい。式中X1は、置換基Y1およびY2と結合する有機基である。式中X2は、置換基Y3およびY4と結合する有機基である。Y1およびY2はプロトン供与性置換基がプロトンを放出してなる基であり、同一分子内の置換基Y1、およびY2が珪素原子と結合してキレート構造を形成するものである。 Y3およびY4はプロトン供与性置換基がプロトンを放出してなる基であり、同一分子内の置換基Y3およびY4が珪素原子と結合してキレート構造を形成するものである。X1、およびX2は互いに同一でも異なっていてもよく、Y1、Y2、Y3、およびY4は互いに同一であっても異なっていてもよい。Z1は置換もしくは無置換の芳香環または複素環を有する有機基、あるいは置換もしくは無置換の脂肪族基を表す。)
(In the formula, P represents a phosphorus atom, R 1 , R 2 , R 3 and R 4 each represents an organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring, or a substituted or unsubstituted aliphatic group. And X 1 is an organic group bonded to the substituents Y 1 and Y 2. In the formula, X 2 is bonded to the substituents Y 3 and Y 4 . Y 1 and Y 2 are groups formed by proton-donating substituents releasing protons, and the substituents Y 1 and Y 2 in the same molecule are combined with a silicon atom to form a chelate structure. Y 3 and Y 4 are groups formed by proton-donating substituents releasing protons, and the substituents Y 3 and Y 4 in the same molecule bind to a silicon atom to form a chelate structure. in a .X 1, and X 2 are identical with each other things May be different, Y 1, Y 2, Y 3, and Y 4 is good .Z 1 also being the same or different organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring or, (Represents a substituted or unsubstituted aliphatic group.)
前記一般式(3)で表されるで表される化合物は、例えば特開2007−246671にある方法で合成することができる。一例を挙げると、2,3−ジヒドロキシナフタレンと3−メルカプトプロピルトリメトキシシラン及びメタノールを攪拌下で均一溶解し、トリエチルアミンのアセトニトリル溶液を、攪拌下のフラスコ内に滴下。次いでテトラフェニルホスホニウムブロミドのメタノール溶液をフラスコ内に徐々に滴下し、析出する結晶を濾過、水洗及び真空乾燥することにより精製して得ることができる。 The compound represented by the general formula (3) can be synthesized by, for example, a method described in JP-A-2007-246671. For example, 2,3-dihydroxynaphthalene, 3-mercaptopropyltrimethoxysilane, and methanol are uniformly dissolved under stirring, and an acetonitrile solution of triethylamine is dropped into the stirring flask. Next, a methanol solution of tetraphenylphosphonium bromide is gradually dropped into the flask, and the precipitated crystals can be purified by filtration, washing with water and vacuum drying.
また前記(D)オニウム塩化合物は、下記一般式(4)で表される化合物が好ましい。 The (D) onium salt compound is preferably a compound represented by the following general formula (4).
(式中、Pはリン原子、Bはホウ素原子、R1、R2、R3、及びR4は、それぞれ、置換もしくは無置換の芳香環又は複素環を有する有機基、あるいは置換もしくは無置換の脂肪族基を示し、互いに同一であっても異なっていてもよい。R5、R6、R7及びR8は、それぞれ、置換もしくは無置換の芳香環又は複素環を有する有機基、あるいは置換もしくは無置換の脂肪族基、あるいは分子外に放出しうるプロトンを少なくとも1個以上分子内に有するn(n≧1)価のプロトン供与体であり、互いに同一であっても異なっていてもよい。)
(Wherein P is a phosphorus atom, B is a boron atom, R 1 , R 2 , R 3 , and R 4 are each an organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring, or a substituted or unsubstituted group. R 5 , R 6 , R 7 and R 8 are each an organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring, or N (n ≧ 1) -valent proton donors having at least one substituted or unsubstituted aliphatic group or at least one proton capable of being released outside the molecule, which may be the same or different Good.)
前記一般式(4)で表される化合物は、例えば、特開2000−246113にある方法で合成することができる。一例を挙げると、ホウ酸、3−ヒドロキシ−2−ナフトエ酸、メチルセルソルブ及び純水を攪拌下で均一に溶解し、次いで、テトラフェニルホスホニウムブロミドをメタノール/純水混合溶媒に均一に溶解した溶液を、攪拌下のフラスコ内に滴下し、析出する結晶を濾過、水洗及び真空乾燥することにより精製して得ることができる。 The compound represented by the general formula (4) can be synthesized, for example, by the method described in JP-A-2000-246113. For example, boric acid, 3-hydroxy-2-naphthoic acid, methyl cellosolve and pure water were uniformly dissolved under stirring, and then tetraphenylphosphonium bromide was uniformly dissolved in a methanol / pure water mixed solvent. The solution can be purified by dropping it into a stirred flask and filtering the precipitated crystals by filtration, washing with water and vacuum drying.
前記(D)オニウム塩化合物の含有量は、特に限定されないが、(A)エポキシ樹脂と(B)シアネート樹脂の総量に対して0.01〜10重量%であるのが好ましく、より好ましくは、0.1〜5重量%であり、最も好ましくは0.2〜2.5重量%である。これにより、優れた硬化性、流動性及び硬化物特性を発現することができる。 The content of the (D) onium salt compound is not particularly limited, but is preferably 0.01 to 10% by weight, more preferably, based on the total amount of (A) epoxy resin and (B) cyanate resin. It is 0.1 to 5 weight%, Most preferably, it is 0.2 to 2.5 weight%. Thereby, the outstanding sclerosis | hardenability, fluidity | liquidity, and hardened | cured material characteristic can be expressed.
本発明のエポキシ樹脂組成物は、さらにエポキシ樹脂組成物と導体層との密着性が向上するような樹脂成分を添加しても良い。例えば、フェノキシ樹脂、ポリアミド系樹脂、ポリビニルアルコール系樹脂等が挙げられる。これらの中でも特に金属との密着性に優れ、硬化反応速度に与える影響が少ないと言う点でフェノキシ樹脂を添加することが好ましい。前記フェノキシ樹脂は、例えばビスフェノール骨格を有するフェノキシ樹脂、ノボラック骨格を有するフェノキシ樹脂、ナフタレン骨格を有するフェノキシ樹脂、ビフェニル骨格を有するフェノキシ樹脂等が挙げられる。また、これらの骨格を複数種類有した構造のフェノキシ樹脂を用いることもできる。 The epoxy resin composition of the present invention may further contain a resin component that improves the adhesion between the epoxy resin composition and the conductor layer. For example, phenoxy resin, polyamide resin, polyvinyl alcohol resin, and the like can be given. Among these, it is preferable to add a phenoxy resin in terms of excellent adhesion to a metal and little influence on the curing reaction rate. Examples of the phenoxy resin include a phenoxy resin having a bisphenol skeleton, a phenoxy resin having a novolak skeleton, a phenoxy resin having a naphthalene skeleton, and a phenoxy resin having a biphenyl skeleton. A phenoxy resin having a structure having a plurality of these skeletons can also be used.
本発明のエポキシ樹脂組成物は、特に限定されないが、カップリング剤を用いることができる。前記カップリング剤は、前記熱硬化性樹脂と、前記無機充填材との界面の濡れ性を向上させる。そして繊維基材に対して熱硬化性樹脂等および無機充填材を均一に定着させ、耐熱性、特に吸湿後の半田耐熱性を改良することができる。
前記カップリング剤は、特に限定されないが、具体的にはエポキシシランカップリング剤、カチオニックシランカップリング剤、アミノシランカップリング剤、チタネート系カップリング剤およびシリコーンオイル型カップリング剤の中から選ばれる1種以上のカップリング剤を使用することが好ましい。これにより、無機充填材の界面との濡れ性を高くすることができ、それによって耐熱性をより向上させることできる。
The epoxy resin composition of the present invention is not particularly limited, but a coupling agent can be used. The coupling agent improves the wettability of the interface between the thermosetting resin and the inorganic filler. And a thermosetting resin etc. and an inorganic filler can be uniformly fixed with respect to a fiber base material, and heat resistance, especially the solder heat resistance after moisture absorption can be improved.
The coupling agent is not particularly limited, and is specifically selected from an epoxy silane coupling agent, a cationic silane coupling agent, an aminosilane coupling agent, a titanate coupling agent, and a silicone oil type coupling agent. It is preferred to use one or more coupling agents. Thereby, the wettability with the interface of an inorganic filler can be made high, and thereby heat resistance can be improved more.
前記カップリング剤の添加量は、特に限定されないが、無機充填材100重量部に対して0.05〜3重量部が好ましく、特に0.1〜2重量部が好ましい。含有量が0.05重量部未満であると無機充填材を十分に被覆できないため耐熱性を向上する効果が低下する場合があり、3重量部を超えると反応に影響を与え、曲げ強度等が低下する場合がある。 Although the addition amount of the coupling agent is not particularly limited, it is preferably 0.05 to 3 parts by weight, particularly preferably 0.1 to 2 parts by weight with respect to 100 parts by weight of the inorganic filler. If the content is less than 0.05 parts by weight, the effect of improving the heat resistance may be reduced because the inorganic filler cannot be sufficiently coated. If the content exceeds 3 parts by weight, the reaction will be affected, and the bending strength will be May decrease.
前記エポキシ樹脂組成物には、さらに必要に応じて、顔料、染料、消泡剤、レベリング剤、紫外線吸収剤、発泡剤、酸化防止剤、難燃剤、イオン捕捉剤等の上記成分以外の添加物を添加しても良い。 If necessary, the epoxy resin composition may further contain additives other than the above components such as pigments, dyes, antifoaming agents, leveling agents, ultraviolet absorbers, foaming agents, antioxidants, flame retardants, and ion scavengers. May be added.
次に、プリプレグについて説明する。
前述したエポキシ樹脂組成物を用いたプリプレグは、前記エポキシ樹脂組成物を基材に含浸させてなるものである。これにより、誘電特性、高温多湿下での機械的、電気的接続信頼性等の各種特性に優れたプリント配線板を製造するのに好適なプリプレグを得ることができる。
Next, the prepreg will be described.
A prepreg using the above-described epoxy resin composition is obtained by impregnating a base material with the epoxy resin composition. Thereby, a prepreg suitable for manufacturing a printed wiring board excellent in various characteristics such as dielectric characteristics, mechanical and electrical connection reliability under high temperature and high humidity can be obtained.
前記基材は、特に限定されないが、ガラス織布、ガラス不織布等のガラス繊維基材、ポリアミド樹脂繊維、芳香族ポリアミド樹脂繊維、全芳香族ポリアミド樹脂繊維等のポリアミド系樹脂繊維、ポリエステル樹脂繊維、芳香族ポリエステル樹脂繊維、全芳香族ポリエステル樹脂繊維等のポリエステル系樹脂繊維、ポリイミド樹脂繊維、フッ素樹脂繊維等を主成分とする織布または不織布で構成される合成繊維基材、クラフト紙、コットンリンター紙、リンターとクラフトパルプの混抄紙等を主成分とする紙基材等の有機繊維基材等が挙げられる。これらの中でもガラス繊維基材が好ましい。これにより、プリプレグの強度が向上し、吸水率を下げることができ、また熱膨張係数を小さくすることができる。 The base material is not particularly limited, but glass fiber base materials such as glass woven fabric and glass nonwoven fabric, polyamide resin fibers, aromatic polyamide resin fibers, polyamide resin fibers such as wholly aromatic polyamide resin fibers, polyester resin fibers, Synthetic fiber substrate, kraft paper, cotton linter composed of woven or non-woven fabric mainly composed of aromatic polyester resin fiber, polyester resin fiber such as wholly aromatic polyester resin fiber, polyimide resin fiber, fluororesin fiber, etc. Examples thereof include organic fiber base materials such as paper base materials mainly composed of paper, mixed paper of linter and kraft pulp, and the like. Among these, a glass fiber base material is preferable. Thereby, the intensity | strength of a prepreg can improve, a water absorption can be lowered | hung, and a thermal expansion coefficient can be made small.
前記ガラス繊維基材を構成するガラスは、特に限定されないが、例えばEガラス、Cガラス、Aガラス、Sガラス、Dガラス、NEガラス、Tガラス、Hガラス等が挙げられる。これらの中でもEガラス、Tガラス、または、Sガラスが好ましい。これにより、ガラス繊維基材の高弾性化を達成することができ、熱膨張係数も小さくすることができる。 Although the glass which comprises the said glass fiber base material is not specifically limited, For example, E glass, C glass, A glass, S glass, D glass, NE glass, T glass, H glass etc. are mentioned. Among these, E glass, T glass, or S glass is preferable. Thereby, the high elasticity of a glass fiber base material can be achieved and a thermal expansion coefficient can also be made small.
前記プリプレグを製造する方法は、特に限定されないが、例えば、前述したエポキシ樹脂組成物を用いて樹脂ワニスを調製し、基材を樹脂ワニスに浸漬する方法、各種コーターにより塗布する方法、スプレーにより吹き付ける方法等が挙げられる。これらの中でも、基材を樹脂ワニスに浸漬する方法が好ましい。これにより、基材に対する樹脂組成物の含浸性を向上することができる。なお、基材を樹脂ワニスに浸漬する場合、通常の含浸塗布設備を使用することができる。 The method for producing the prepreg is not particularly limited. For example, a resin varnish is prepared using the epoxy resin composition described above, the substrate is immersed in the resin varnish, the coating method is applied by various coaters, and sprayed. Methods and the like. Among these, the method of immersing the base material in the resin varnish is preferable. Thereby, the impregnation property of the resin composition with respect to a base material can be improved. In addition, when a base material is immersed in a resin varnish, a normal impregnation coating equipment can be used.
前記樹脂ワニスに用いられる溶媒は、前記樹脂組成物中の樹脂成分に対して良好な溶解性を示すことが望ましいが、悪影響を及ぼさない範囲で貧溶媒を使用しても構わない。良好な溶解性を示す溶媒は、例えばアセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン、シクロペンタノン、テトラヒドロフラン、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド、エチレングリコール、セルソルブ系、カルビトール系等が挙げられる。
前記樹脂ワニスの固形分は、特に限定されないが、前記樹脂組成物の固形分50〜80重量%が好ましく、特に60〜78重量% が好ましい。これにより、樹脂ワニスの基材への含浸性を更に向上できる。前記基材に前記樹脂組成物を含浸させる所定温度、特に限定されないが、例えば90〜220℃等で乾燥させることによりプリプレグを得ることが出来る。
The solvent used in the resin varnish desirably exhibits good solubility in the resin component in the resin composition, but a poor solvent may be used within a range that does not adversely affect the resin varnish. Examples of the solvent exhibiting good solubility include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, cyclopentanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, cellosolve, and carbitol.
The solid content of the resin varnish is not particularly limited, but the solid content of the resin composition is preferably 50 to 80% by weight, and particularly preferably 60 to 78% by weight. Thereby, the impregnation property to the base material of a resin varnish can further be improved. Although it does not specifically limit the predetermined temperature which impregnates the said resin composition to the said base material, A prepreg can be obtained by drying at 90-220 degreeC etc., for example.
次に、積層板について説明する。
本発明の積層は、前記プリプレグを少なくとも1枚もしくは複数枚積層したものの上下両面に、金属箔を重ね、加熱、加圧することで得ることができる。前記加熱する温度は、特に限定されないが、120〜230℃が好ましく、特に150〜210℃が好ましい。また、前記加圧する圧力は、特に限定されないが、1〜5MPaが好ましく、特に2〜4MPaが好ましい。これにより、誘電特性、高温多湿化での機械的、電気的接続信頼性に優れた積層板を得ることができる。
Next, a laminated board is demonstrated.
The lamination of the present invention can be obtained by laminating metal foil on both upper and lower surfaces of at least one or a plurality of the prepregs laminated, and heating and pressing. The heating temperature is not particularly limited, but is preferably 120 to 230 ° C, particularly preferably 150 to 210 ° C. Moreover, the pressure to pressurize is not particularly limited, but is preferably 1 to 5 MPa, and particularly preferably 2 to 4 MPa. Thereby, the laminated board excellent in the dielectric property and the mechanical and electrical connection reliability in high temperature and high humidity can be obtained.
前記金属箔は、特に限定されないが、例えば銅及び銅系合金、アルミ及びアルミ系合金、銀及び銀系合金、金及び金系合金、亜鉛及び亜鉛系合金、ニッケル及びニッケル系合金、錫及び錫系合金、鉄および鉄系合金等の金属箔が挙げられる。 The metal foil is not particularly limited. For example, copper and copper-based alloy, aluminum and aluminum-based alloy, silver and silver-based alloy, gold and gold-based alloy, zinc and zinc-based alloy, nickel and nickel-based alloy, tin and tin And metal foils such as iron alloys, iron and iron alloys.
次に、樹脂シートについて説明する。
前述したエポキシ樹脂組成物を用いた樹脂シートは、エポキシ樹脂組成物からなる絶縁層をキャリアフィルム、又は金属箔上に形成することにより得られる。まず、絶縁層を形成する本発明のエポキシ樹脂組成物を、アセトン、メチルエチルケトン、メチルイソブチルケトン、トルエン、酢酸エチル、シクロヘキサン、ヘプタン、シクロヘキサンシクロヘキサノン、テトラヒドロフラン、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド、エチレングリコール、セルソルブ系、カルビトール系、アニソール等の有機溶剤中で、超音波分散方式、高圧衝突式分散方式、高速回転分散方式、ビーズミル方式、高速せん断分散方式、および自転公転式分散方式などの各種混合機を用いて溶解、混合、撹拌して樹脂ワニスを作製する。
Next, the resin sheet will be described.
The resin sheet using the epoxy resin composition described above is obtained by forming an insulating layer made of the epoxy resin composition on a carrier film or a metal foil. First, the epoxy resin composition of the present invention for forming an insulating layer is acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, Various mixing machines such as ultrasonic dispersion method, high-pressure collision dispersion method, high-speed rotation dispersion method, bead mill method, high-speed shear dispersion method, and rotation and revolution dispersion method in organic solvents such as cellsolve, carbitol, and anisole A resin varnish is prepared by dissolving, mixing, and stirring using the above.
前記樹脂ワニス中の樹脂組成物の含有量は、特に限定されないが、45〜85重量%が好ましく、特に55〜75重量%が好ましい。 Although content of the resin composition in the said resin varnish is not specifically limited, 45 to 85 weight% is preferable and 55 to 75 weight% is especially preferable.
次に前記樹脂ワニスを、各種塗工装置を用いて、キャリアフィルム上または金属箔上に塗工した後、これを乾燥する。または、樹脂ワニスをスプレー装置によりキャリアフィルムまたは金属箔に噴霧塗工した後、これを乾燥する。これらの方法により樹脂シートを作製することができる。
前記塗工装置は、特に限定されないが、例えば、ロールコーター、バーコーター、ナイフコーター、グラビアコーター、ダイコーター、コンマコーターおよびカーテンコーターなどを用いることができる。これらの中でも、ダイコーター、ナイフコーター、およびコンマコーターを用いる方法が好ましい。これにより、ボイドがなく、均一な絶縁層の厚みを有する樹脂シートを効率よく製造することができる。
Next, the resin varnish is coated on a carrier film or a metal foil using various coating apparatuses, and then dried. Or after spray-coating a resin varnish on a carrier film or metal foil with a spray apparatus, this is dried. A resin sheet can be produced by these methods.
Although the said coating apparatus is not specifically limited, For example, a roll coater, a bar coater, a knife coater, a gravure coater, a die coater, a comma coater, a curtain coater, etc. can be used. Among these, a method using a die coater, a knife coater, and a comma coater is preferable. Thereby, the resin sheet which does not have a void and has the thickness of a uniform insulating layer can be manufactured efficiently.
前記キャリアフィルムは、キャリアフィルムに絶縁層を形成するため、取扱いが容易であるものを選択することが好ましい。また、樹脂シートの絶縁層を内層回路基板面に積層後、キャリアフィルムを剥離することから、内層回路基板に積層後、剥離が容易であるものであることが好ましい。したがって、前記キャリアフィルムは、例えばポリエチレンテレフタレート、ポリブチレンテレフタレートなどのポリエステル樹脂、フッ素系樹脂、ポリイミド樹脂などの耐熱性を有した熱可塑性樹脂フィルムなどを用いることが好ましい。これらキャリアフィルムの中でも、ポリエステルで構成されるフィルムが最も好ましい。これにより、絶縁層から適度な強度で剥離することが容易となる。 Since the carrier film forms an insulating layer on the carrier film, it is preferable to select one that is easy to handle. Moreover, since the carrier film is peeled after laminating the insulating layer of the resin sheet on the inner layer circuit board surface, it is preferable that the resin sheet is easily peeled after being laminated on the inner layer circuit board. Therefore, it is preferable to use a thermoplastic resin film having heat resistance such as a polyester resin such as polyethylene terephthalate or polybutylene terephthalate, a fluorine-based resin, or a polyimide resin, for example. Among these carrier films, a film made of polyester is most preferable. This facilitates peeling from the insulating layer with an appropriate strength.
前記キャリアフィルムの厚さは、特に限定されないが、1〜100μmが好ましく、特に3〜50μmが好ましい。キャリアフィルムの厚さが前記範囲内であると、取扱いが容易で、また絶縁層表面の平坦性に優れる。 Although the thickness of the said carrier film is not specifically limited, 1-100 micrometers is preferable and 3-50 micrometers is especially preferable. When the thickness of the carrier film is within the above range, handling is easy and the flatness of the surface of the insulating layer is excellent.
前記金属箔は、前記キャリアフィルム同様、内層回路基板に樹脂シートを積層後、剥離して用いても良いし、また、金属箔をエッチングし導体回路として用いても良い。前記金属箔は、特に限定されないが、例えば、銅及び/又は銅系合金、アルミ及び/又はアルミ系合金、鉄及び/又は鉄系合金、銀及び/又は銀系合金、金及び金系合金、亜鉛及び亜鉛系合金、ニッケル及びニッケル系合金、錫及び錫系合金等の金属箔などを用いることができる。 Similar to the carrier film, the metal foil may be used after peeling a resin sheet on an inner circuit board and may be used after peeling the metal foil as a conductor circuit. The metal foil is not particularly limited. For example, copper and / or copper-based alloy, aluminum and / or aluminum-based alloy, iron and / or iron-based alloy, silver and / or silver-based alloy, gold and gold-based alloy, Metal foils such as zinc and zinc alloys, nickel and nickel alloys, tin and tin alloys can be used.
前記金属箔の厚さは、特に限定されないが、0.1μm以上70μm以下であることが好ましい。さらには1μm以上35μ以下が好ましく、さらに好ましくは1.5μm以上18μm以下が好ましい。前記金属箔の厚さが上記下限値未満であると、金属箔の傷つき、ピンホールの発生し、金属箔をエッチングし導体回路として用いて場合、回路パターン成形時のメッキバラツキ、回路断線、エッチング液やデスミア液等の薬液の染み込みなどが発生する怖れがあり、前記上限値を超えると、金属箔の厚みバラツキが大きくなったり、金属箔粗化面の表面粗さバラツキが大きくなったりする場合がある。
また、前記金属箔は、キャリア箔付き極薄金属箔を用いることもできる。キャリア箔付き極薄金属箔とは、剥離可能なキャリア箔と極薄金属箔とを張り合わせた金属箔である。キャリア箔付き極薄金属箔を用いることで前記絶縁層の両面に極薄金属箔層を形成できることから、例えば、セミアディティブ法などで回路を形成する場合、無電解メッキを行うことなく、極薄金属箔を直接給電層として電解メッキすることで、回路を形成後、極薄銅箔をフラッシュエッチングすることができる。キャリア箔付き極薄金属箔を用いることによって、厚さ10μm以下の極薄金属箔でも、例えばプレス工程での極薄金属箔のハンドリング性の低下や、極薄銅箔の割れや切れを防ぐことができる。前記極薄金属箔の厚さは、0.1μm以上10μm以下が好ましい。さらに、0.5μm以上5μm以下が好ましく、さらに1μm以上3μm以下が好ましい。前記極薄金属箔の厚さが前記下限値未満であると、キャリア箔を剥離後の極薄金属箔の傷つき、極薄金属箔のピンホールの発生、ピンホールの発生による回路パターン成形時のメッキバラツキ、回路配線の断線、エッチング液やデスミア液等の薬液の染み込みなどが発生する怖れがあり、前記上限値を超えると、極薄金属箔の厚みバラツキが大きくなったり、極薄金属箔粗化面の表面粗さのバラツキが大きくなったりする場合がある。
通常、キャリア箔付き極薄金属箔は、プレス成形後の積層板に回路パターン形成する前にキャリア箔を剥離する。
The thickness of the metal foil is not particularly limited, but is preferably 0.1 μm or more and 70 μm or less. Further, it is preferably 1 μm or more and 35 μm or less, more preferably 1.5 μm or more and 18 μm or less. If the thickness of the metal foil is less than the above lower limit, the metal foil is scratched, pinholes are generated, and when the metal foil is etched and used as a conductor circuit, plating variations, circuit disconnection, etching during circuit pattern molding There is a risk of infiltration of chemicals such as liquid and desmear liquid. When the upper limit is exceeded, the thickness variation of the metal foil increases or the surface roughness variation of the metal foil roughened surface increases. There is a case.
The metal foil may be an ultrathin metal foil with a carrier foil. The ultrathin metal foil with a carrier foil is a metal foil obtained by laminating a peelable carrier foil and an ultrathin metal foil. Since an ultra-thin metal foil layer can be formed on both sides of the insulating layer by using an ultra-thin metal foil with a carrier foil, for example, when forming a circuit by a semi-additive method, etc. By electroplating the metal foil directly as the power feeding layer, the ultrathin copper foil can be flash etched after the circuit is formed. By using an ultra-thin metal foil with a carrier foil, even with an ultra-thin metal foil having a thickness of 10 μm or less, for example, a reduction in handling properties of the ultra-thin metal foil in a pressing process, and cracking or cutting of the ultra-thin copper foil are prevented. Can do. The thickness of the ultrathin metal foil is preferably 0.1 μm or more and 10 μm or less. Furthermore, it is preferably 0.5 μm or more and 5 μm or less, more preferably 1 μm or more and 3 μm or less. When the thickness of the ultrathin metal foil is less than the lower limit, the ultrathin metal foil is damaged after peeling the carrier foil, the pinhole of the ultrathin metal foil is generated, and the circuit pattern is formed by the generation of the pinhole. Plating variation, disconnection of circuit wiring, penetration of chemicals such as etching liquid and desmear liquid, etc. may occur. If the above upper limit is exceeded, the thickness variation of the ultrathin metal foil will increase or the ultrathin metal foil There may be a case where the roughness of the roughened surface becomes large.
Usually, an ultrathin metal foil with a carrier foil peels off the carrier foil before forming a circuit pattern on the press-molded laminate.
次に、多層プリント配線板について説明する。
前記で得られた両面に銅箔を有する積層板を用意し、ドリル等によりスルーホールを形成し、メッキにより前記スルーホールを充填した後、積層板の両面に、エッチング等により所定の導体回路(内層回路)を形成し、導体回路を黒化処理等の粗化処理することにより内層回路基板を作製する。
次に内層回路基板の上下面に、前述した樹脂シート、または前述したプリプレグを形成し、加熱加圧成形する。
具体的には、前記樹脂シート、またはプリプレグと内層回路基板とを合わせて、真空加圧式ラミネーター装置などを用いて真空加熱加圧成形させる。その後、熱風乾燥装置等で加熱硬化させることにより内層回路基板上に絶縁層を形成することができる。
ここで加熱加圧成形する条件としては特に限定されないが、一例を挙げると、温度60〜160℃、圧力0.2〜3MPaで実施することができる。また、加熱硬化させる条件としては特に限定されないが、一例を挙げると、温度140〜240℃、時間30〜120分間で実施することができる。
あるいは、前記樹脂シート、またはプリプレグを内層回路基板に重ね合わせ、これを平板プレス装置などを用いて加熱加圧成形することにより内層回路基板上に絶縁層を形成することもできる。
ここで加熱加圧成形する条件としては、特に限定されないが、一例を挙げると、温度140〜240℃、圧力1〜4MPaで実施することができる。
Next, a multilayer printed wiring board will be described.
A laminated board having copper foil on both sides obtained above is prepared, a through hole is formed by a drill or the like, and after filling the through hole by plating, a predetermined conductor circuit ( The inner layer circuit board is manufactured by forming the inner layer circuit) and subjecting the conductor circuit to a roughening process such as a blackening process.
Next, the above-described resin sheet or the above-described prepreg is formed on the upper and lower surfaces of the inner layer circuit board, and is heated and pressed.
Specifically, the resin sheet or prepreg and the inner layer circuit board are combined and subjected to vacuum heating and pressing using a vacuum pressurizing laminator apparatus or the like. Thereafter, the insulating layer can be formed on the inner circuit board by heat-curing with a hot air drying device or the like.
Although it does not specifically limit as conditions to heat-press form here, if an example is given, it can implement at the temperature of 60-160 degreeC, and the pressure of 0.2-3 MPa. Moreover, it is although it does not specifically limit as conditions to heat-harden, If an example is given, it can implement in temperature 140-240 degreeC and time 30-120 minutes.
Alternatively, the insulating layer can be formed on the inner layer circuit board by superimposing the resin sheet or prepreg on the inner layer circuit board and subjecting the resin sheet or prepreg to heat pressing using a flat plate press apparatus or the like.
Although it does not specifically limit as conditions to heat-press form here, If an example is given, it can implement at the temperature of 140-240 degreeC, and the pressure of 1-4 MPa.
上述した方法にて得られた基板は、絶縁層表面を過マンガン酸塩、重クロム酸塩等の酸化剤などにより粗化処理した後、金属メッキにより新たな導電配線回路を形成することができる The substrate obtained by the above-described method can form a new conductive wiring circuit by metal plating after roughening the surface of the insulating layer with an oxidizing agent such as permanganate or dichromate.
その後、前記絶縁層を加熱することにより硬化させる。硬化させる温度は、特に限定されないが、例えば、100℃〜250℃の範囲で硬化させることができる。好ましくは150℃〜200℃で硬化させることである。
次に、絶縁層に、炭酸レーザー装置を用いて開口部を設け、電解銅めっきにより絶縁層表面に外層回路形成を行い、外層回路と内層回路との導通を図る。なお、外層回路には、半導体素子を実装するための接続用電極部を設ける。
その後、最外層にソルダーレジストを形成し、露光・現像により半導体素子が実装できるよう接続用電極部を露出させ、ニッケル金メッキ処理を施し、所定の大きさに切断し、多層プリント配線板を得ることができる。
Thereafter, the insulating layer is cured by heating. Although the temperature to harden | cure is not specifically limited, For example, it can be made to harden | cure in the range of 100 to 250 degreeC. Preferably it is made to harden | cure at 150 to 200 degreeC.
Next, an opening is provided in the insulating layer by using a carbonic acid laser device, and an outer layer circuit is formed on the surface of the insulating layer by electrolytic copper plating to achieve conduction between the outer layer circuit and the inner layer circuit. The outer layer circuit is provided with a connection electrode portion for mounting a semiconductor element.
After that, a solder resist is formed on the outermost layer, the connection electrode part is exposed so that a semiconductor element can be mounted by exposure / development, nickel gold plating treatment is performed, and it is cut into a predetermined size to obtain a multilayer printed wiring board. Can do.
次に、半導体装置について説明する。
半導体装置は、上述した方法にて製造された多層プリント配線板に半導体素子を実装し、製造することができる。半導体素子の実装方法、封止方法は特に限定されない。例えば、半導体素子と多層プリント配線板とを用い、フリップチップボンダーなどを用いて多層プリント配線板上の接続用電極部と半導体素子の半田バンプの位置合わせを行う。その後、IRリフロー装置、熱板、その他加熱装置を用いて半田バンプを融点以上に加熱し、多層プリント配線板と半田バンプとを溶融接合することにより接続する。そして、多層プリント配線板と半導体素子との間に液状封止樹脂を充填し、硬化させることで半導体装置を得ることができる。
Next, a semiconductor device will be described.
A semiconductor device can be manufactured by mounting a semiconductor element on a multilayer printed wiring board manufactured by the method described above. The mounting method and the sealing method of the semiconductor element are not particularly limited. For example, a semiconductor element and a multilayer printed wiring board are used, and a flip-chip bonder or the like is used to align the connection electrode portions on the multilayer printed wiring board and the solder bumps of the semiconductor element. Thereafter, the solder bump is heated to the melting point or higher by using an IR reflow device, a hot plate, or other heating device, and the multilayer printed wiring board and the solder bump are connected by fusion bonding. And a semiconductor device can be obtained by filling and hardening a liquid sealing resin between a multilayer printed wiring board and a semiconductor element.
なお、本発明は前述の実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形、改良等は本発明に含まれるものである。 It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
以下、本発明を実施例および比較例により詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples.
実施例及び比較例において用いた原材料は以下の通りである。
(1)水酸化アルミニウムA/ギブサイト;日本軽金属社製BE−033 平均粒子径2.2μm BET比表面積3.6m2/g
(2)水酸化アルミニウムB/ギブサイト;昭和電工社製HP−360 平均粒子径2.7μm BET比表面積1.3m2/g
(3)水酸化アルミニウムC/ベーマイト;大名化学社製C−20 平均粒子径2.0μm BET比表面積4.0m2/g
(4)無機充填材A/球状シリカ;アドマテックス社製・「SO-25R」、平均粒子径0.5μm
(5)無機充填材B/球状シリカ;アドマテックス社製・「SO-32R」、平均粒子径1.0μm
(6)無機充填材C/球状シリカ;電気化学工業社製・「SFP−20M」、平均粒子径0.3μm
(7)無機充填材D/水酸化マグネシウム;協和化学工業社製・「キスマ5Q」、平均粒子径0.8μm
(8)無機充填材E/タルク;富士タルク社製・「LMS−200」、平均粒子径5.0μm
(9)エポキシ樹脂A/メトキシナフタレンジメチレン型エポキシ樹脂;DIC社製 「HP−5000」、エポキシ当量250
(10)エポキシ樹脂B/メトキシナフタレンジメチレン型エポキシ樹脂;DIC社製 「EXA−9900」、エポキシ当量274
(11)エポキシ樹脂C/メトキシナフタレンジメチレン型エポキシ樹脂;DIC社製 「EXA−7320L」、エポキシ当量246
(12)エポキシ樹脂D/ビフェニルジメチレン型エポキシ樹脂:日本化薬社製・「NC−3000」、エポキシ当量275
(13)シアネート樹脂A/ノボラック型シアネート樹脂:ロンザジャパン社製・「プリマセットPT−30」、シアネート当量124
(14)シアネート樹脂B/ビスフェノールA型シアネート樹脂:ロンザジャパン社製・「プリマセットBA−200」、シアネート当量139
(15)シアネート樹脂C/ビスフェノールA型シアネート樹脂:ロンザジャパン社製・「プリマセットBA−230」、シアネート当量232
(16)シアネート樹脂D/ジシクロペンタジエン型シアネート樹脂:ロンザジャパン社製・「プリマセットDT−4000」、シアネート当量174
(17)フェノキシ樹脂/ビスフェノールA型エポキシ樹脂とビスフェノールF型エポキシ樹脂との共重合体:ジャパンエポキシレジン社製・「jER4275」、重量平均分子量60000
(18)フェノール系硬化剤/ビフェニルアルキレン型ノボラック樹脂:明和化成社製「MEH−7851−3H」、水酸基当量220
(19)硬化促進剤/イミダゾール化合物:四国化成工業社製・「キュアゾール1B2PZ(1-ベンジル-2-フェニルイミダゾール)」
(20)(D)オニウム塩化合物
化合物(D1)、および化合物(D2):合成方法については以下に合成方法を示す。
The raw materials used in Examples and Comparative Examples are as follows.
(1) Aluminum hydroxide A / Gibsite; BE-033 manufactured by Nippon Light Metal Co., Ltd. Average particle size 2.2 μm BET specific surface area 3.6 m 2 / g
(2) Aluminum hydroxide B / Gibsite; Showa Denko HP-360 average particle size 2.7 μm BET specific surface area 1.3 m 2 / g
(3) Aluminum hydroxide C / boehmite; C-20 manufactured by Daimyo Chemical Co., Ltd. Average particle size 2.0 μm BET specific surface area 4.0 m 2 / g
(4) Inorganic filler A / spherical silica; manufactured by Admatechs Co., Ltd. “SO-25R”, average particle size 0.5 μm
(5) Inorganic filler B / spherical silica; manufactured by Admatechs Co., Ltd. “SO-32R”, average particle size 1.0 μm
(6) Inorganic filler C / spherical silica; manufactured by Denki Kagaku Kogyo Co., Ltd. “SFP-20M”, average particle size 0.3 μm
(7) Inorganic filler D / magnesium hydroxide; “Kisuma 5Q” manufactured by Kyowa Chemical Industry Co., Ltd., average particle size 0.8 μm
(8) Inorganic filler E / talc; manufactured by Fuji Talc “LMS-200”, average particle size 5.0 μm
(9) Epoxy resin A / Methoxynaphthalene dimethylene type epoxy resin; “HP-5000” manufactured by DIC, epoxy equivalent 250
(10) Epoxy resin B / methoxynaphthalene dimethylene type epoxy resin; “EXA-9900” manufactured by DIC, epoxy equivalent 274
(11) Epoxy resin C / Methoxynaphthalene dimethylene type epoxy resin; “EXA-7320L” manufactured by DIC, epoxy equivalent 246
(12) Epoxy resin D / biphenyl dimethylene type epoxy resin: Nippon Kayaku Co., Ltd. “NC-3000”, epoxy equivalent 275
(13) Cyanate resin A / Novolak type cyanate resin: Lonza Japan Co., Ltd. “Primaset PT-30”, cyanate equivalent 124
(14) Cyanate resin B / bisphenol A type cyanate resin: Lonza Japan Co., Ltd. “Primaset BA-200”, cyanate equivalent 139
(15) Cyanate resin C / bisphenol A type cyanate resin: Lonza Japan Co., Ltd. “Primaset BA-230”, cyanate equivalent 232
(16) Cyanate resin D / dicyclopentadiene type cyanate resin: manufactured by Lonza Japan Co., Ltd. “Primaset DT-4000”, cyanate equivalent 174
(17) Phenoxy resin / copolymer of bisphenol A type epoxy resin and bisphenol F type epoxy resin: “jER4275” manufactured by Japan Epoxy Resin Co., Ltd., weight average molecular weight 60000
(18) Phenol-based curing agent / biphenylalkylene type novolak resin: “MEH-7851-3H” manufactured by Meiwa Kasei Co., Ltd., hydroxyl equivalent 220
(19) Curing accelerator / imidazole compound: “Cureazole 1B2PZ (1-benzyl-2-phenylimidazole)” manufactured by Shikoku Kasei Kogyo Co., Ltd.
(20) (D) Onium salt compound compound (D1) and compound (D2): The synthesis method is shown below.
前記(D)オニウム塩化合物は、以下の方法により得られたものを用いた。 The (D) onium salt compound was obtained by the following method.
1.(D)オニウム塩化合物の合成
本発明に用いられる(D)オニウム塩化合物の合成方法の一例を示すが、合成方法はこれに限定されるものではない。
1. (D) Synthesis of Onium Salt Compound An example of a method for synthesizing the (D) onium salt compound used in the present invention is shown, but the synthesis method is not limited thereto.
(1)化合物(D1)の合成
温度計、撹拌機およびジムロート冷却管を備えた3つ口セパラブルフラスコに、テトラフェニルホスホニウムテトラフェニルボレート(北興化学工業(株)製、TPP−K)32.9g(0.05mol)と1−ナフトエ酸34.4g(0.20mol)を仕込み、窒素雰囲気下、260℃で5時間攪拌した。その際、副生するベンゼンを系外に除去した。冷却後、得られた結晶をメタノールで洗浄した後、乾燥し、さらに真空乾燥することにより精製し、以下の構造式(5)で示される化合物(D1)を47.0g得た。収率は、91%であった。
(1) Synthesis of Compound (D1) In a three-necked separable flask equipped with a thermometer, a stirrer and a Dimroth condenser, tetraphenylphosphonium tetraphenylborate (manufactured by Hokuko Chemical Co., Ltd., TPP-K) 32. 9 g (0.05 mol) and 1-naphthoic acid 34.4 g (0.20 mol) were charged, and the mixture was stirred at 260 ° C. for 5 hours in a nitrogen atmosphere. At that time, by-product benzene was removed from the system. After cooling, the obtained crystal was washed with methanol, dried, and further purified by vacuum drying to obtain 47.0 g of a compound (D1) represented by the following structural formula (5). The yield was 91%.
(5)化合物(D2)の合成
撹拌機およびジムロート冷却管を備えた3つ口セパラブルフラスコに、2,3−ジヒドロキシナフタレン32.0g(0.20mol)、フェニルトリメトキシシラン19.8g(0.10mol)、及びメタノール150mLを仕込み、攪拌下で均一溶解した。予めトリ−n−ブチルアミン18.5g(0.10mol)を20mLのアセトニトリルに溶解した溶液を、攪拌下のフラスコ内に滴下し、次いでテトラフェニルホスホニウムブロミド41.9g(0.10mol)を、予め100mLのメタノールで溶解した溶液を、フラスコ内に徐々に滴下すると結晶が析出した。析出した結晶を、濾過、水洗及び真空乾燥することにより精製し、以下の構造式(5)で示される化合物(D2)を70.0g得た。収率は、92%であった。
(5) Synthesis of compound (D2) In a three-necked separable flask equipped with a stirrer and a Dimroth condenser, 32.0 g (0.20 mol) of 2,3-dihydroxynaphthalene, 19.8 g of phenyltrimethoxysilane (0 .10 mol) and 150 mL of methanol were charged and uniformly dissolved under stirring. A solution prepared by previously dissolving 18.5 g (0.10 mol) of tri-n-butylamine in 20 mL of acetonitrile was dropped into a stirred flask, and then 41.9 g (0.10 mol) of tetraphenylphosphonium bromide was added in advance to 100 mL. A solution dissolved in methanol was gradually added dropwise into the flask to precipitate crystals. The precipitated crystals were purified by filtration, washing with water, and vacuum drying to obtain 70.0 g of a compound (D2) represented by the following structural formula (5). The yield was 92%.
<実施例1>
(1)樹脂ワニスの調製
エポキシ樹脂A24.8重量部、シアネート樹脂A30.0重量部、フェノキシ樹脂5.0重量部、硬化促進剤(イミダゾール化合物)0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムA40.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
<Example 1>
(1) Preparation of resin varnish Dissolve and disperse 24.8 parts by weight of epoxy resin A, 30.0 parts by weight of cyanate resin A, 5.0 parts by weight of phenoxy resin, and 0.2 parts by weight of a curing accelerator (imidazole compound) in methyl ethyl ketone. It was. Further, 40.0 parts by weight of aluminum hydroxide A was added, and the mixture was stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
(2)プリプレグの作製
上記の樹脂ワニスをガラス織布(厚さ94μm、日東紡績社製、WEA−116E)に含浸し、150℃の加熱炉で2分間乾燥して、プリプレグ中のワニス固形分が約50重量%のプリプレグを得た。
(2) Preparation of prepreg The above resin varnish was impregnated into a glass woven fabric (thickness 94 μm, manufactured by Nitto Boseki Co., Ltd., WEA-116E), dried in a heating furnace at 150 ° C. for 2 minutes, and varnish solid content in the prepreg About 50% by weight of prepreg was obtained.
(3)積層板の作製
上記のプリプレグを2枚重ね、両面に12μmの銅箔(三井金属社製)を重ねて、圧力4MPa、温度200℃で2時間加熱加圧成形することによって、両面に銅箔を有する厚さ0.2mmの積層板を得た。
(3) Fabrication of laminated plate Two prepregs are stacked, 12 μm copper foil (made by Mitsui Kinzoku Co., Ltd.) is stacked on both sides, and heated and pressed at a pressure of 4 MPa and a temperature of 200 ° C. for 2 hours. A laminated board having a thickness of 0.2 mm having a copper foil was obtained.
(4)多層プリント配線板の作製
前記で得られた積層板に、0.1mmのドリルビットを用いてスルーホール加工を行った後、メッキによりスルーホールを充填した。さらに、両面をエッチングにより回路形成し、内層回路基板として用いた。前記内層回路基板の表裏に、前記で得られたプリプレグを重ね合わせ、これを、真空加圧式ラミネーター装置を用いて、温度100℃、圧力1MPaにて真空加熱加圧成形させた。これを、熱風乾燥装置にて170℃で60分間加熱し硬化させて、多層プリント配線板を得た。
(4) Production of Multilayer Printed Wiring Board After the through hole processing was performed on the laminated board obtained above using a 0.1 mm drill bit, the through hole was filled by plating. Further, a circuit was formed on both sides by etching and used as an inner layer circuit board. The prepreg obtained above was superposed on the front and back of the inner layer circuit board, and this was subjected to vacuum heating and press molding at a temperature of 100 ° C. and a pressure of 1 MPa using a vacuum pressurizing laminator apparatus. This was heated and cured at 170 ° C. for 60 minutes in a hot air drying apparatus to obtain a multilayer printed wiring board.
(5)半導体装置の作製
前記で多層プリント配線板の絶縁層に炭酸レーザー装置を用いて開口部を設け、電解銅めっきにより絶縁層表面に外層回路形成を行い、外層回路と内層回路との導通を図った。なお、外層回路は、半導体素子を実装するための接続用電極部を設けた。
その後、最外層にソルダーレジスト(太陽インキ社製、PSR4000/AUS308)を形成し、露光・現像により半導体素子が実装できるよう接続用電極部を露出させ、ニッケル金メッキ処理を施し、50mm×50mmの大きさに切断し、多層プリント配線板を得た。
その後、半導体素子(TEGチップ、サイズ15mm×15mm、厚み0.8mm)は、半田バンプはSn/Pb組成の共晶で形成され、回路保護膜はポジ型感光性樹脂(住友ベークライト社製CRC−8300)で形成されたものを使用した。半導体装置の組み立ては、まず、半田バンプにフラックス材を転写法により均一に塗布し、次にフリップチップボンダー装置を用い、上記パッケージ基板上に加熱圧着により搭載した。次に、IRリフロー炉で半田バンプを溶融接合した後、液状封止樹脂(住友ベークライト社製、CRP−4152S)を充填し、液状封止樹脂を硬化させることで半導体装置を得た。尚、液状封止樹脂は、温度150℃、120分の条件で硬化させた。
(5) Fabrication of semiconductor device As described above, an opening is provided in the insulating layer of the multilayer printed wiring board using a carbonic acid laser device, an outer layer circuit is formed on the surface of the insulating layer by electrolytic copper plating, and conduction between the outer layer circuit and the inner layer circuit is performed. I planned. Note that the outer layer circuit was provided with a connection electrode part for mounting a semiconductor element.
Thereafter, a solder resist (manufactured by Taiyo Ink Co., PSR4000 / AUS308) is formed on the outermost layer, the connection electrode portion is exposed so that a semiconductor element can be mounted by exposure and development, and a nickel gold plating process is performed, and the size is 50 mm × 50 mm. A multilayer printed wiring board was obtained by cutting.
Thereafter, in the semiconductor element (TEG chip, size 15 mm × 15 mm, thickness 0.8 mm), the solder bump is formed of a eutectic of Sn / Pb composition, and the circuit protective film is a positive photosensitive resin (CRC- manufactured by Sumitomo Bakelite Co., Ltd.). 8300) was used. In assembling the semiconductor device, first, a flux material was uniformly applied to the solder bumps by a transfer method, and then mounted on the package substrate by thermocompression bonding using a flip chip bonder device. Next, after solder bumps were melt-bonded in an IR reflow furnace, a liquid sealing resin (manufactured by Sumitomo Bakelite Co., Ltd., CRP-4152S) was filled and the liquid sealing resin was cured to obtain a semiconductor device. The liquid sealing resin was cured at a temperature of 150 ° C. for 120 minutes.
<実施例2>
エポキシ樹脂A8.0重量部、シアネート樹脂A15.0重量部、フェノール系硬化剤7.0重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムA20.0重量部と無機充填材B50.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例1と同様にして、プリプレグ、積層板、多層プリント配線板及び半導体装置を得た。
<Example 2>
Epoxy resin A 8.0 parts by weight, cyanate resin A 15.0 parts by weight, and phenolic curing agent 7.0 parts by weight were dissolved and dispersed in methyl ethyl ketone. Furthermore, 20.0 parts by weight of aluminum hydroxide A and 50.0 parts by weight of inorganic filler B were added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
Using this resin varnish, a prepreg, a laminate, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 1.
<実施例3>
エポキシ樹脂B5.0重量部、シアネート樹脂B10.0重量部、フェノール系硬化剤5.0重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムB30.0重量部と無機充填材A50.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例1と同様にして、プリプレグ、積層板、多層プリント配線板及び半導体装置を得た。
<Example 3>
Epoxy resin B 5.0 parts by weight, cyanate resin B 10.0 parts by weight, and phenolic curing agent 5.0 parts by weight were dissolved and dispersed in methyl ethyl ketone. Further, 30.0 parts by weight of aluminum hydroxide B and 50.0 parts by weight of inorganic filler A were added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
Using this resin varnish, a prepreg, a laminate, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 1.
<実施例4>
(1)樹脂ワニスの調製
エポキシ樹脂C19.8重量部、シアネート樹脂C15.0重量部、フェノキシ樹脂5.0重量部、硬化促進剤0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムB20.0重量部と無機充填材C40.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
<Example 4>
(1) Preparation of resin varnish 19.8 parts by weight of epoxy resin C, 15.0 parts by weight of cyanate resin C, 5.0 parts by weight of phenoxy resin, and 0.2 parts by weight of a curing accelerator were dissolved and dispersed in methyl ethyl ketone. Furthermore, 20.0 parts by weight of aluminum hydroxide B and 40.0 parts by weight of inorganic filler C were added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
(2)プリプレグの作製
上記の樹脂ワニスをガラス織布(厚さ94μm、日東紡績社製、WEA−116E)に含浸し、150℃の加熱炉で2分間乾燥して、プリプレグ中のワニス固形分が約50重量%のプリプレグを得た。
(2) Preparation of Prepreg Glass woven fabric (thickness 94 μm, Nitto Boseki Co., Ltd., WEA-116E) is impregnated with the above resin varnish, dried in a heating furnace at 150 ° C. for 2 minutes, and varnish solid content in the prepreg About 50% by weight of prepreg was obtained.
(3)積層板の作製
上記のプリプレグを2枚重ね、両面に12μmの銅箔(三井金属社製)を重ねて、圧力4MPa、温度200℃で2時間加熱加圧成形することによって、両面に蒼白を有する厚さ0.2mmの積層板を得た。
(3) Preparation of laminated plate Two sheets of the above prepreg are stacked, 12 μm copper foil (made by Mitsui Kinzoku Co., Ltd.) is stacked on both sides, and heated and pressed at a pressure of 4 MPa and a temperature of 200 ° C. for 2 hours. A laminate having a thickness of 0.2 mm was obtained.
(4)樹脂シートの作製
上記の樹脂ワニスを、PETフィルム(厚さ38μm、三菱樹脂ポリエステル社製、SFB38)上に、コンマコーター装置を用いて、乾燥後のエポキシ樹脂層の厚さが40μmとなるように塗工し、これを150℃の乾燥装置で5分間乾燥して、樹脂シートを製造した。
(4) Production of Resin Sheet Using the above-described resin varnish on a PET film (thickness 38 μm, manufactured by Mitsubishi Plastics Polyester, SFB38) using a comma coater device, the thickness of the epoxy resin layer after drying is 40 μm. This was coated and dried for 5 minutes with a drying apparatus at 150 ° C. to produce a resin sheet.
(5)多層プリント配線板の作製
前記で得られた積層板に、0.1mmのドリルビットを用いてスルーホール加工を行った後、メッキによりスルーホールを充填した。さらに、両面をエッチングにより回路形成し、内層回路基板として用いた。上記で得られた樹脂シートのエポキシ樹脂面を内側にして重ね合わせ、これを、真空加圧式ラミネーター装置を用いて、温度100℃、圧力1MPaにて真空加熱加圧成形させた。樹脂シートから基材のPETフィルムを剥離後、熱風乾燥装置にて170℃で60分間加熱し硬化させて、多層プリント配線板を得た。
(5) Production of multilayer printed wiring board After the through-hole processing was performed on the laminated board obtained above using a 0.1 mm drill bit, the through-hole was filled by plating. Further, a circuit was formed on both sides by etching and used as an inner layer circuit board. The resin sheet obtained above was superposed with the epoxy resin surface facing inward, and this was vacuum heated and pressure molded at a temperature of 100 ° C. and a pressure of 1 MPa using a vacuum pressure laminator device. After peeling the PET film as the base material from the resin sheet, the substrate was heated and cured at 170 ° C. for 60 minutes with a hot air dryer to obtain a multilayer printed wiring board.
(6)半導体装置の作製
前記で多層プリント配線板の絶縁層に炭酸レーザー装置を用いて開口部を設け、電解銅めっきにより絶縁層表面に外層回路形成を行い、外層回路と内層回路との導通を図った。なお、外層回路は、半導体素子を実装するための接続用電極部を設けた。
その後、最外層にソルダーレジスト(太陽インキ社製、PSR4000/AUS308)を形成し、露光・現像により半導体素子が実装できるよう接続用電極部を露出させ、ニッケル金メッキ処理を施し、50mm×50mmの大きさに切断し、多層プリント配線板を得た。
その後、半導体素子(TEGチップ、サイズ15mm×15mm、厚み0.8mm)は、半田バンプはSn/Pb組成の共晶で形成され、回路保護膜はポジ型感光性樹脂(住友ベークライト社製CRC−8300)で形成されたものを使用した。半導体装置の組み立ては、まず、半田バンプにフラックス材を転写法により均一に塗布し、次にフリップチップボンダー装置を用い、上記パッケージ基板上に加熱圧着により搭載した。次に、IRリフロー炉で半田バンプを溶融接合した後、液状封止樹脂(住友ベークライト社製、CRP−415S)を充填し、液状封止樹脂を硬化させることで半導体装置を得た。尚、液状封止樹脂は、温度150℃、120分の条件で硬化させた。
(6) Fabrication of semiconductor device As described above, an opening is provided in the insulating layer of the multilayer printed wiring board using a carbonic acid laser device, an outer layer circuit is formed on the surface of the insulating layer by electrolytic copper plating, and conduction between the outer layer circuit and the inner layer circuit is performed. I planned. Note that the outer layer circuit was provided with a connection electrode part for mounting a semiconductor element.
Thereafter, a solder resist (manufactured by Taiyo Ink Co., PSR4000 / AUS308) is formed on the outermost layer, the connection electrode portion is exposed so that a semiconductor element can be mounted by exposure and development, and a nickel gold plating process is performed, and the size is 50 mm × 50 mm. A multilayer printed wiring board was obtained by cutting.
Thereafter, in the semiconductor element (TEG chip, size 15 mm × 15 mm, thickness 0.8 mm), the solder bump is formed of a eutectic of Sn / Pb composition, and the circuit protective film is a positive photosensitive resin (CRC- manufactured by Sumitomo Bakelite Co., Ltd.). 8300) was used. In assembling the semiconductor device, first, a flux material was uniformly applied to the solder bumps by a transfer method, and then mounted on the package substrate by thermocompression bonding using a flip chip bonder device. Next, after melt-bonding solder bumps in an IR reflow furnace, a liquid sealing resin (manufactured by Sumitomo Bakelite Co., Ltd., CRP-415S) was filled and the liquid sealing resin was cured to obtain a semiconductor device. The liquid sealing resin was cured at a temperature of 150 ° C. for 120 minutes.
<実施例5>
エポキシ樹脂A9.8重量部、エポキシ樹脂D20.0重量部、シアネート樹脂A45.0重量部、硬化促進剤0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムC20.0重量部と無機充填材D5.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例4と同様にして、プリプレグ、積層板、樹脂シート、多層プリント配線板及び半導体装置を得た。
<Example 5>
9.8 parts by weight of epoxy resin A, 20.0 parts by weight of epoxy resin D, 45.0 parts by weight of cyanate resin A, and 0.2 parts by weight of a curing accelerator were dissolved and dispersed in methyl ethyl ketone. Further, 20.0 parts by weight of aluminum hydroxide C and 5.0 parts by weight of inorganic filler D were added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
Using this resin varnish, a prepreg, a laminate, a resin sheet, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 4.
<実施例6>
エポキシ樹脂A19.8重量部、シアネート樹脂D10.0重量部、硬化促進剤0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムA10.0重量部、無機充填材A50.0重量部、および無機充填材E10.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例4と同様にして、プリプレグ、積層板、樹脂シート、多層プリント配線板及び半導体装置を得た。
<Example 6>
19.8 parts by weight of epoxy resin A, 10.0 parts by weight of cyanate resin D, and 0.2 parts by weight of a curing accelerator were dissolved and dispersed in methyl ethyl ketone. Further, 10.0 parts by weight of aluminum hydroxide A, 50.0 parts by weight of inorganic filler A, and 10.0 parts by weight of inorganic filler E were added and stirred for 10 minutes using a high-speed stirrer to obtain a solid content of 60 weights. % Resin varnish was prepared.
Using this resin varnish, a prepreg, a laminate, a resin sheet, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 4.
<実施例7>
エポキシ樹脂A23.0重量部、シアネート樹脂A14.0重量部、フェノキシ樹脂2.0重量部、化合物(D1)1.0重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムA30.0重量部と無機充填材A30.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例1と同様にして、プリプレグ、積層板、多層プリント配線板及び半導体装置を得た。
<Example 7>
23.0 parts by weight of epoxy resin A, 14.0 parts by weight of cyanate resin A, 2.0 parts by weight of phenoxy resin, and 1.0 part by weight of compound (D1) were dissolved and dispersed in methyl ethyl ketone. Further, 30.0 parts by weight of aluminum hydroxide A and 30.0 parts by weight of inorganic filler A were added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
Using this resin varnish, a prepreg, a laminate, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 1.
<実施例8>
エポキシ樹脂A19.0重量部、シアネート樹脂A19.5重量部、化合物(D2)1.5重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムC20.0重量部と無機充填材B40.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分60重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例4と同様にして、プリプレグ、積層板、樹脂シート、多層プリント配線板及び半導体装置を得た。
<Example 8>
19.0 parts by weight of epoxy resin A, 19.5 parts by weight of cyanate resin A, and 1.5 parts by weight of compound (D2) were dissolved and dispersed in methyl ethyl ketone. Further, 20.0 parts by weight of aluminum hydroxide C and 40.0 parts by weight of inorganic filler B were added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 60% by weight.
Using this resin varnish, a prepreg, a laminate, a resin sheet, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 4.
<比較例1>
エポキシ樹脂D29.8重量部、シアネート樹脂A15.0重量部、フェノキシ樹脂5.0重量部、硬化促進剤0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムA50.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分50重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例1と同様にして、プリプレグ、積層板、多層プリント配線板及び半導体装置を得た。
<Comparative Example 1>
29.8 parts by weight of epoxy resin D, 15.0 parts by weight of cyanate resin A, 5.0 parts by weight of phenoxy resin, and 0.2 parts by weight of a curing accelerator were dissolved and dispersed in methyl ethyl ketone. Further, 50.0 parts by weight of aluminum hydroxide A was added, and the mixture was stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 50% by weight.
Using this resin varnish, a prepreg, a laminate, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 1.
<比較例2>
エポキシ樹脂A39.8重量部、フェノキシ樹脂10.0重量部、硬化促進剤0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、水酸化アルミニウムA50.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分50重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例1と同様にして、プリプレグ、積層板、多層プリント配線板及び半導体装置を得た。
<Comparative example 2>
39.8 parts by weight of epoxy resin A, 10.0 parts by weight of phenoxy resin, and 0.2 parts by weight of a curing accelerator were dissolved and dispersed in methyl ethyl ketone. Further, 50.0 parts by weight of aluminum hydroxide A was added, and the mixture was stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 50% by weight.
Using this resin varnish, a prepreg, a laminate, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 1.
<比較例3>
エポキシ樹脂A24.8重量部、シアネート樹脂A20.0重量部、フェノキシ樹脂5.0重量部、硬化促進剤0.2重量部をメチルエチルケトンに溶解、分散させた。さらに、無機充填材B50.0重量部を添加して、高速攪拌装置を用いて10分間攪拌して、固形分50重量%の樹脂ワニスを調製した。
この樹脂ワニスを用い、実施例1と同様にして、プリプレグ、積層板、多層プリント配線板及び半導体装置を得た。
<Comparative Example 3>
24.8 parts by weight of epoxy resin A, 20.0 parts by weight of cyanate resin A, 5.0 parts by weight of phenoxy resin, and 0.2 parts by weight of a curing accelerator were dissolved and dispersed in methyl ethyl ketone. Furthermore, 50.0 parts by weight of inorganic filler B was added and stirred for 10 minutes using a high-speed stirrer to prepare a resin varnish having a solid content of 50% by weight.
Using this resin varnish, a prepreg, a laminate, a multilayer printed wiring board, and a semiconductor device were obtained in the same manner as in Example 1.
実施例および比較例で得られた積層板、多層プリント配線板及び半導体装置について、特性の評価を行った。結果を表1、表2に示す。 The characteristics of the laminates, multilayer printed wiring boards and semiconductor devices obtained in the examples and comparative examples were evaluated. The results are shown in Tables 1 and 2.
(1)熱膨張係数
厚さ0.2mmの積層板の銅箔を全面エッチングし、得られた積層板から4mm×20mmのテストピースを切り出し、TMAを用いて10℃/分の条件で、50℃〜150℃での面方向の線膨張係数(平均線膨張係数)を測定した。各符号は以下のとおりである。
◎:線膨張係数10ppm未満
○:線膨張係数10ppm以上15ppm未満
×:線膨張係数15ppm以上
(1) Coefficient of thermal expansion The copper foil of the laminated board having a thickness of 0.2 mm was etched on the whole surface, a test piece of 4 mm × 20 mm was cut out from the obtained laminated board, and the condition was 50 ° C./minute using TMA. The linear expansion coefficient (average linear expansion coefficient) in the plane direction at from ℃ to 150 ℃ was measured. Each code | symbol is as follows.
A: Linear expansion coefficient of less than 10 ppm B: Linear expansion coefficient of 10 ppm or more and less than 15 ppm X: Linear expansion coefficient of 15 ppm or more
(2)積層板の成型状態
得られた両面銅張り積層板を銅箔エッチングし、外観を観察し、周辺部に見られる無機成分と樹脂成分の分離によるスジの長さを測定した。各符号は以下のとおりである。
◎:スジの長さが5mm未満
○:スジの長さが5〜10mm
×:スジの長さが10mm以上
(2) Molded state of laminated board The obtained double-sided copper-clad laminated board was subjected to copper foil etching, the appearance was observed, and the length of streaks due to separation of the inorganic component and the resin component found in the peripheral portion was measured. Each code | symbol is as follows.
◎: The length of the stripe is less than 5 mm ○: The length of the stripe is 5 to 10 mm
X: The length of the stripe is 10 mm or more
(3)ドリル加工性
厚さ0.2mmの積層板を、0.1mmのドリル刃を用い、30万回転で、2000回穴を開けた後の、刃先の状態を評価した。各符号は以下のとおりである。
○:刃先が十分残っており、再研磨によるドリル刃の再生が可能
×:刃先が丸まってしまい、ドリル刃の再生が不可能
(3) Drill workability The state of the cutting edge was evaluated after making a hole of 2000 times at 300,000 rotations using a 0.1 mm drill blade on a 0.2 mm thick laminate. Each code | symbol is as follows.
○: The cutting edge remains sufficiently, and it is possible to regenerate the drill blade by regrinding ×: The cutting edge is rounded and the drill blade cannot be regenerated.
(4)半田耐熱性
得られた多層プリント配線板から50mm角にサンプルを切り出し、3/4エッチングし、プレッシャークッカーを用いて121℃2時間処理後、260℃の半田に30秒浸漬させ、膨れの有無を観察した。各符号は以下のとおりである。
○:異常なし
×:膨れが発生
(4) Solder heat resistance A 50 mm square sample was cut out from the obtained multilayer printed wiring board, 3/4 etched, treated at 121 ° C. for 2 hours using a pressure cooker, immersed in 260 ° C. solder for 30 seconds, and swollen The presence or absence of was observed. Each code | symbol is as follows.
○: No abnormality ×: Swelling occurred
(5)熱衝撃性試験
得られた半導体装置をフロリナート中で−55℃10分、125℃10分、−55℃10分を1サイクルとして、1000サイクル処理し、テストピースにクラックが発生していないか目視で確認した。
各符号は以下の通りである。
○:クラック発生なし
×:クラック発生
(5) Thermal shock test The obtained semiconductor device was processed in Fluorinert for 1000 cycles at −55 ° C. for 10 minutes, 125 ° C. for 10 minutes, and −55 ° C. for 10 minutes, and cracks occurred in the test piece. It was confirmed visually.
Each code is as follows.
○: No crack occurrence ×: Crack occurrence
(6)絶縁信頼性試験[1]
得られた多層プリント配線板を用いて、スルーホール壁間の絶縁信頼性試験を実施した。壁間150μmのパターンで、130℃/85%環境下で20V印加させ、200時間後のサンプルを試験槽から取り出し、常温常湿下での抵抗値を測定した。各符号は下記の通りである。
◎:抵抗値109Ω以上
○:抵抗値108Ω以上109未満
△:抵抗値107Ω以上108Ω未満
×:抵抗値107Ω未満
(6) Insulation reliability test [1]
Using the obtained multilayer printed wiring board, an insulation reliability test between through-hole walls was performed. With a pattern of 150 μm between walls, 20 V was applied in an environment of 130 ° C./85%, a sample after 200 hours was taken out from the test tank, and the resistance value at normal temperature and humidity was measured. Each code is as follows.
◎: Resistance value of 10 9 Ω or more ○: Resistance value of 10 8 Ω or more and less than 109 △: Resistance value of 10 7 Ω or more and less than 108 Ω ×: Resistance value of less than 10 7 Ω
(7)絶縁信頼性試験[2]
上記と同様に絶縁信頼性試験を実施し、200時間後の湿中(130℃/85%環境下)における抵抗挙動を観測した。尚、湿中では常温常湿環境に比べ、過酷な条件での抵抗値測定となるため一般的には抵抗値が低くなる傾向がある。各符号は下記の通りである。
◎:抵抗値109Ω以上
○:抵抗値108Ω以上109未満
△:抵抗値107Ω以上108Ω未満
×:抵抗値107Ω未満
(7) Insulation reliability test [2]
The insulation reliability test was performed in the same manner as described above, and the resistance behavior in the humidity (at 130 ° C./85% environment) after 200 hours was observed. In the humidity, since the resistance value is measured under severe conditions as compared with the normal temperature and normal humidity environment, the resistance value generally tends to be low. Each code is as follows.
◎: Resistance value of 10 9 Ω or more ○: Resistance value of 10 8 Ω or more and less than 109 △: Resistance value of 10 7 Ω or more and less than 108 Ω ×: Resistance value of less than 10 7 Ω
実施例1〜8は、本発明のエポキシ樹脂組成物を用いたものである。評価全般にわたり良好であり、積層板の成形不良もなく、良好な成形状態であった。一方、比較例1は、メトキシナフタレンジメチレン型エポキシ樹脂を用いなかったため、積層板の成型時に不具合が見られ、半導体装置の信頼性も劣る結果であった。比較例2は、シアネート樹脂を用いなかったため、低熱膨張性及び耐熱性に劣り、半導体装置の信頼性も満足なものではなかった。比較例3は水酸化アルミニウムを用いておらず、シリカのみを用いたためドリル加工性が低下した。成形性、低熱膨張性、耐熱性、加工性、信頼性をすべて満足させるためには、本発明のエポキシ樹脂組成物が有効であることがわかった。 Examples 1 to 8 use the epoxy resin composition of the present invention. It was good throughout the evaluation, there was no molding failure of the laminate, and it was in a good molding state. On the other hand, since Comparative Example 1 did not use a methoxynaphthalenedi-methylene type epoxy resin, problems were observed during the molding of the laminate, and the reliability of the semiconductor device was also poor. Since the cyanate resin was not used for the comparative example 2, it was inferior to low thermal expansion property and heat resistance, and the reliability of the semiconductor device was not satisfactory. In Comparative Example 3, aluminum hydroxide was not used, and only silica was used, so that drillability was lowered. It has been found that the epoxy resin composition of the present invention is effective for satisfying all of moldability, low thermal expansibility, heat resistance, workability, and reliability.
参考例1〜4は、前記実施例1の配合を基準に硬化促進(イミダゾール)(参考例1)を、フェノール系化合物(参考例2)、化合物(D1)(参考例3)、または化合物(D2)(参考例4)に置き換え、プリプレグ、積層板、多層プリント配線板及び半導体装置を作製したものである。
従来の絶縁信頼性試験では、湿中から取り出し、絶縁信頼性を評価する方法であるため、参考例1〜4では差は見られないが、より過酷な評価となる、湿中測定での絶縁信頼性試験では、参考例1のイミダゾール化合物を用いたものは、200時間後の抵抗値が108Ω未満と比較的低い抵抗値となった。また、参考例2のフェノール系硬化剤を用いたものは、108Ω以上を保っており良好であった。最も良好であったのは参考例3および4のオニウム塩化合物を用いたものであり、ほとんど抵抗値の低下が見られなかった。
In Reference Examples 1 to 4, curing acceleration (imidazole) (Reference Example 1), phenolic compound (Reference Example 2), compound (D1) (Reference Example 3), or compound (based on the formulation of Example 1 above) D2) A prepreg, a laminated board, a multilayer printed wiring board, and a semiconductor device were produced by replacing (Reference Example 4).
In the conventional insulation reliability test, it is a method of taking out from moisture and evaluating the insulation reliability. Therefore, although there is no difference in Reference Examples 1 to 4, insulation in moisture measurement is more severe evaluation. In the reliability test, those using the imidazole compound of Reference Example 1 had a relatively low resistance value of less than 10 8 Ω after 200 hours. Moreover, what used the phenol type hardening | curing agent of the reference example 2 was maintaining 10 < 8 > (ohm) or more, and was favorable. The best results were obtained using the onium salt compounds of Reference Examples 3 and 4, and almost no decrease in resistance value was observed.
本発明のエポキシ樹脂組成物は、小型化、高道度配線化、高信頼性が要求されるシステム・イン・パッケージ(SiP)等に用いられるパッケージ基板と呼ばれる基板に好適に用いることができる。 The epoxy resin composition of the present invention can be suitably used for a substrate called a package substrate used for a system-in-package (SiP) or the like that requires miniaturization, high-level wiring, and high reliability.
Claims (14)
(A)下記一般式(1)で表される構造を有するエポキシ樹脂、(B)水酸化アルミニウム、(C)シアネート樹脂および(D)オニウム塩化合物を必須成分とすることを特徴とするエポキシ樹脂組成物。
[式中 Xは水素、またはエポキシ基(グリシジルエーテル基)を、R1およびR2は、
互いに独立し、水素、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される1種を表す。nは1以上の整数であり、p、qは1以上の整数であり、またp、qの値は、繰り返し単位毎に同一でも、異なっていてもよい。] An epoxy resin composition used for a prepreg or a resin sheet used for a multilayer printed wiring board,
(A) An epoxy resin having a structure represented by the following general formula (1), (B) aluminum hydroxide , (C) a cyanate resin, and (D) an onium salt compound as essential components Composition.
[Wherein X is hydrogen or an epoxy group (glycidyl ether group), and R1 and R2 are
Independent of each other, it represents one selected from hydrogen, methyl group, ethyl group, propyl group, butyl group, phenyl group, and benzyl group. n is an integer of 1 or more, p and q are integers of 1 or more, and the values of p and q may be the same or different for each repeating unit. ]
くとも1個以上分子内に有するn(n≧1)価のプロトン供与体のアニオン、又はその錯アニオンを示す。) The epoxy resin composition according to claim 1, wherein the (D) onium salt compound is a compound represented by the following general formula (2).
A semiconductor device comprising a semiconductor element mounted on the multilayer printed wiring board according to claim 13 .
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| JP2009151517A JP5206600B2 (en) | 2008-06-30 | 2009-06-25 | Epoxy resin composition, prepreg, laminate, resin sheet, multilayer printed wiring board, and semiconductor device |
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| JP2009151517A JP5206600B2 (en) | 2008-06-30 | 2009-06-25 | Epoxy resin composition, prepreg, laminate, resin sheet, multilayer printed wiring board, and semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPWO2010074085A1 (en) * | 2008-12-25 | 2012-06-21 | 住友ベークライト株式会社 | Resin composition, prepreg, resin sheet, metal-clad laminate, printed wiring board, multilayer printed wiring board, and semiconductor device |
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| JP5233710B2 (en) * | 2008-02-12 | 2013-07-10 | 三菱瓦斯化学株式会社 | Resin composition, prepreg and metal foil-clad laminate |
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| WO2011138865A1 (en) * | 2010-05-07 | 2011-11-10 | 住友ベークライト株式会社 | Epoxy resin composition for circuit boards, prepreg, laminate, resin sheet, laminate for printed wiring boards, printed wiring boards, and semiconductor devices |
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| JP2012131946A (en) * | 2010-12-24 | 2012-07-12 | Sumitomo Bakelite Co Ltd | Resin composition for printed wiring board, prepreg, laminate, resin sheet, printed wiring board, and semiconductor device |
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| CN103917596A (en) | 2011-11-07 | 2014-07-09 | 三菱瓦斯化学株式会社 | Resin composition, and prepreg and laminated sheet each produced using same |
| WO2013115069A1 (en) * | 2012-01-31 | 2013-08-08 | 三菱瓦斯化学株式会社 | Resin composition for printed wiring board material, and prepreg, resin sheet, metal foil-clad laminate, and printed wiring board using same |
| KR101766552B1 (en) | 2012-07-06 | 2017-08-08 | 닛폰 하츠죠 가부시키가이샤 | Laminate for circuit boards, metal-based circuit board, and power module |
| JP5975090B2 (en) * | 2014-11-21 | 2016-08-23 | 住友ベークライト株式会社 | Resin composition, prepreg, resin layer, circuit board, and semiconductor device |
| JP6934633B2 (en) * | 2016-12-19 | 2021-09-15 | パナソニックIpマネジメント株式会社 | Prepreg, metal-clad laminate and printed wiring board |
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| JP3821797B2 (en) * | 2003-06-05 | 2006-09-13 | 住友ベークライト株式会社 | Resin composition, resin-coated metal foil and multilayer printed wiring board |
| JP4941804B2 (en) * | 2005-03-02 | 2012-05-30 | Dic株式会社 | Epoxy resin composition, cured product thereof, semiconductor sealing material, novel phenol resin, and novel epoxy resin |
| JP2007051267A (en) * | 2005-07-20 | 2007-03-01 | Hitachi Chem Co Ltd | Resin composition, prepreg using the same, flame-retardant laminate and printed wiring board |
| JP4822053B2 (en) * | 2006-03-01 | 2011-11-24 | 日立化成工業株式会社 | Epoxy resin composition for sealing and electronic component device |
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| JPWO2010074085A1 (en) * | 2008-12-25 | 2012-06-21 | 住友ベークライト株式会社 | Resin composition, prepreg, resin sheet, metal-clad laminate, printed wiring board, multilayer printed wiring board, and semiconductor device |
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