JP4669120B2 - Dental implant and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a dental implant and a manufacturing method thereof. In particular, the present invention relates to a dental implant capable of suppressing elution of a substance causing allergy and a method for producing the dental implant.
[0002]
[Prior art]
An artificial dental root as a conventional dental implant is formed by processing pure titanium or a titanium alloy. This artificial tooth root is used in the dentistry field and is intended to be embedded in the alveolar bone. Pure titanium is suitable as a dental implant material because of its excellent biocompatibility. However, pure titanium is a material that is difficult to process and is expensive, so a titanium alloy is often used as the material for the artificial tooth root.
[0003]
[Problems to be solved by the invention]
Titanium alloys as materials for artificial tooth roots contain metals such as gold, silver, cobalt, and chromium. For this reason, these metals such as gold are ionized, and the eluted metal ions may be taken into the body. This may induce metal allergy in some people. In addition, pure titanium excellent in biocompatibility is also a metal, so it cannot be denied that it may be ionized to induce metal allergy.
[0004]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a dental implant capable of suppressing elution of a substance causing allergy and a method for producing the dental implant.
[0005]
[Means for Solving the Problems]
In order to solve the above problems, a dental implant according to the present invention comprises a dental implant substrate,
A DLC film coated on at least a portion of the dental implant substrate;
It is characterized by comprising.
[0006]
According to the dental implant, at least a part of the dental implant substrate is coated with the DLC film, and the DLC film is chemically stable and has excellent corrosion resistance and biocompatibility, and also has an excellent barrier property against ions. have. For this reason, even if the material which comprises a dental implant base | substrate is ionized, the elution of the ion can be suppressed.
[0007]
Further, in the dental implant according to the present invention, the dental implant base is an artificial tooth root for embedding in the alveolar bone, and when the dental implant base is embedded in the alveolar bone, from the alveolar bone in the dental implant base It is preferable that a DLC film is coated on a portion located at the gingival site. Thereby, it can suppress that the ion of the material elutes to an alveolar bone and a gingival site | part from a dental implant base | substrate.
[0008]
Further, in the dental implant according to the present invention, the dental implant base is made of one selected from the group of pure titanium, titanium alloy and ceramic, or the dental implant base is made of titanium alloy and ceramic. It is also possible that one selected from the group is coated on a substrate.
[0009]
Moreover, in the dental implant which concerns on this invention, it is also possible to arrange | position Si type | system | group intermediate film for improving adhesiveness between the said dental implant base | substrate and the said DLC film. Thereby, even when the surface state of the dental implant substrate and the material constituting the dental implant substrate are poor in adhesion to the DLC film, the dental implant substrate can be coated with the DLC film with good adhesion. .
For example, a film made of Si, SiC, SiO ₂ , SiN, Nb, or the like is preferably used as the Si-based intermediate film.
[0010]
Moreover, in the dental implant which concerns on this invention, it is preferable that the film thickness of the said DLC film is 3 nm or more and 500 nm or less. Further, the thickness of the DLC film is more preferably 10 nm or more and 100 nm or less.
[0011]
Moreover, in the dental implant which concerns on this invention, it is also possible to coat | cover the layer with better affinity with a bone cell than DLC to the said DLC film | membrane. Moreover, in the dental implant which concerns on this invention, it is also possible to coat | cover the layer with better affinity with a bone cell than DLC in the part which is not coat | covered with the DLC film in the said dental implant base | substrate. The layer having good affinity with the bone cells is preferably a layer made of hydroxyapatite.
[0012]
The method for producing a dental implant according to the present invention comprises a step of preparing a dental implant substrate,
Forming a DLC film on at least a part of the dental implant substrate by a plasma CVD method;
It is characterized by comprising.
[0013]
In the method for producing a dental implant according to the present invention, the step of forming the DLC film includes introducing a hydrocarbon-based gas containing at least carbon and hydrogen under a pressure of 0.5 mTorr to 500 mTorr, It is also possible to place an object to be deposited on an electrode connected to, apply high frequency power of 30 W to 3000 W to this electrode, and form a film in a film formation time of 3 seconds or more.
[0014]
In the method for producing a dental implant according to the present invention, the step of forming the DLC film includes introducing a hydrocarbon-based gas containing at least carbon and hydrogen under a pressure of 0.1 mTorr or more and 100 mTorr or less by a power source. Using a hot filament that is energized and kept at a high temperature as a cathode, and using an electrode arranged in the vicinity as an anode, a voltage of 10 V to 200 V is applied between both electrodes, and a current of 10 mA to 2000 mA is passed through the gas. The substrate is placed on a substrate electrode placed at a certain distance from the cathode and anode, a bias voltage of 20 V to 3000 V is applied to the substrate electrode, and the film is formed in a film formation time of 3 seconds or more. It can also be a membrane.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a cross-sectional view showing a state where a dental implant according to an embodiment of the present invention is embedded in an alveolar bone.
[0016]
A dental implant 3 shown in FIG. 1 is an artificial tooth root in which a dental implant base is implanted from the alveolar bone 1 into the gum 2. The DLC (Diamond Like Carbon) film (not shown) is coated on the portion of the dental implant base located from the alveolar bone to the gingival site.
[0017]
The DLC film here is an amorphous carbon-based thin film mainly composed of carbon, and has a Raman spectrum curve obtained by synthesizing two or more curves having a mountain shape. Even hard ones are included. This Raman spectrum is as shown in FIG. However, the Raman spectrum shown in FIG. 2 is merely an example.
[0018]
As shown in FIG. 2, the Raman spectrum curve 10 has two peaks called a G band and a D band, and a wave-shaped curve (G band) 11 having a wavenumber peak around 1500. And a mountain-shaped curve (D band) 12 having a peak near 1300 in wave number.
[0019]
The DLC film thickness and film quality are not particularly limited as long as they are safe in the oral cavity, can suppress the outflow of metal ions, and do not cause the DLC film to peel off.
[0020]
The thickness of the DLC film is preferably 3 nm or more and 500 nm or less, for example. This is because if the film thickness is less than 3 nm, the barrier property of metal ions becomes insufficient, and if the film thickness exceeds 500 nm, the DLC film is easily peeled off. Further, a more preferable film thickness of the DLC film is 10 nm or more and 100 nm or less.
[0021]
A denture 4 is attached to the upper part of the dental implant 3. The dental implant base is made of pure titanium, titanium alloy, ceramic, or the like.
[0022]
Next, a method for producing the dental implant will be described.
First, a dental implant base is formed by processing a material such as pure titanium or a titanium alloy into a predetermined shape.
[0023]
Thereafter, a DLC film is formed on a part of the dental implant base by a plasma CVD (Chemical Vapor Deposition) method. The specific part which forms a DLC film is a part located in the gingival part 2 from the alveolar bone 1 in a dental implant base | substrate when the dental implant 3 is embedded in alveolar bone. Thereby, when implanting the dental implant 3 in the alveolar bone 1, it can suppress that the metal ion of the material elutes to the alveolar bone 1 and the gingival part 2 from the dental implant base | substrate.
[0024]
As a specific method of forming the DLC film, a hydrocarbon-based gas containing at least carbon and hydrogen is introduced under a pressure of 0.5 mTorr or more and 500 mTorr or less, and an object to be formed is formed on an electrode connected to a high frequency power source. It is desirable to place an object, apply a high frequency power of 30 W to 3000 W to the electrode, and form a film with a film formation time of 3 seconds or more.
[0025]
As another method for forming the DLC film, a film forming method called an ionized vapor deposition method or an ion plating method can be used. For example, a hydrocarbon gas containing at least carbon and hydrogen is introduced under a pressure of 0.1 mTorr or more and 100 mTorr or less, and a hot filament energized by a power source and kept at a high temperature is used as a cathode, and an electrode disposed in the vicinity thereof is used. Used as an anode, a voltage of 10 V or more and 200 V or less is applied between both electrodes, a current of 10 mA or more and 2000 mA or less is applied to ionize the gas, and a film formation target is applied to the substrate electrode placed at a certain distance from the cathode / anode. It is desirable to install (dental implant substrate), apply a bias voltage of 20 V to 3000 V to the substrate electrode, and form a film with a film formation time of 3 seconds or more.
[0026]
As the hydrocarbon gas, various gases can be used as long as they contain at least carbon and hydrogen. For example, a compound gas containing only carbon and hydrogen, a gas containing carbon, hydrogen and oxygen, A gas containing carbon, hydrogen, oxygen, silicon, nitrogen, copper, silver, benzene, toluene, acetylene, or the like can also be used.
[0027]
In addition, as the flow rate of the hydrocarbon-based gas under the above film forming conditions, various gas flow rates can be used as long as the gas flow rate can realize the above pressure.
[0028]
According to the above embodiment, the dental implant substrate is coated with the DLC film, and the DLC film has a chemically stable and excellent corrosion resistance (acid / alkali) and an excellent barrier property against metal ions. is doing. For this reason, even if the metal material which comprises a dental implant base | substrate is ionized, the elution of the metal ion can be suppressed. Therefore, induction of metal allergy can be prevented when a dental implant is used.
[0029]
In addition, the DLC film is excellent in biocompatibility and has a property that there is almost no cytotoxicity. Therefore, the DLC film is very suitable for use as a surface covering material for a dental implant substrate, and high safety for the human body can be obtained.
[0030]
Excellent biocompatibility means excellent tissue compatibility, excellent non-immunity, and excellent blood compatibility.
Here, the biocompatibility means that the original function of a living body or a living body component is not impaired when the living body implant material is introduced into the living body or brought into contact with the living body.
[0031]
Tissue compatibility means that damage is not caused to cells constituting the tissue of the living body when the living body implant material is introduced into the living body or brought into contact with the living body. In other words, it does not cause cytotoxicity.
Cytotoxicity means that originally proliferating / differentiating cells are directly or indirectly brought into contact with certain substances and destroyed.
[0032]
Non-immunity refers to not inducing an immune reaction that protects a living body from a stimulus (harmful foreign matter) from outside the living body when the living body implant material is introduced into the living body or brought into contact with the living body.
Blood compatibility means that unnecessary use of blood coagulation (thrombus formation) does not occur when the implantable material is used at a site in contact with blood.
[0033]
The present invention is not limited to the above embodiment, and can be implemented with various modifications. For example, the DLC film can be further coated with a layer having better affinity with bone cells than DLC such as hydroxyapatite. Moreover, it is also possible to coat | cover the layer with better affinity with a bone cell than DLC in the part which the DLC film | membrane in the dental implant base | substrate is not coat | covered. As a result, the DLC film can act as a metal ion blocking film, and at the same time, the biocompatibility of the dental implant can be further improved.
[0034]
Moreover, in the said embodiment, although the part located in a gingival site | part from the alveolar bone in a dental implant base | substrate is coat | covered with a DLC film | membrane, it is also possible to coat | cover a DLC film | membrane on the whole surface of a dental implant base | substrate. .
[0035]
In the above embodiment, the dental implant base is composed of pure titanium, titanium alloy, ceramic, or the like. However, the present invention is not limited to this, and the dental implant base is formed of various materials. For example, the dental implant substrate may be formed by coating the substrate with one selected from the group of titanium alloys and ceramics.
[0036]
In the above embodiment, when the material constituting the dental implant base and the surface state thereof have poor adhesion to the DLC film, Si, SiC are interposed between the dental implant base and the DLC film. It is preferable to arrange a Si-based intermediate film made of SiO ₂ , SiN, Nb or the like. This makes it possible to coat the dental implant substrate with the DLC film with good adhesion.
[0037]
【The invention's effect】
As described above, according to the present invention, a DLC film is coated on at least a part of a dental implant substrate. This DLC film is chemically stable, has excellent corrosion resistance and biocompatibility, and has excellent resistance to ions. It has a barrier property. Therefore, the dental implant which can suppress the elution of the substance which causes allergy, and its manufacturing method can be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a state in which a dental implant according to an embodiment of the present invention is embedded in an alveolar bone.
FIG. 2 is a diagram showing an example of a Raman spectrum of a DLC film.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Alveolar bone 2 ... Gingiva 3 ... Dental implant 4 ... Denture 10 ... Raman spectrum curve 11 ... Mountain-shaped curve (G band)
12 ... Mountain-shaped curve (D band)

Claims (10)

A dental implant substrate;
A DLC film coated on at least a portion of the dental implant substrate;
Comprising
The DLC film is an amorphous carbon-based thin film containing carbon as a main component, have a Raman spectrum curve obtained by synthesizing the chevron-shaped curve of the chevron-shaped curve and the D band of G band,
A dental implant comprising an interlayer film made of at least one of Si, SiO ₂ , SiN, and Nb for improving adhesion between the dental implant substrate and the DLC film . The dental implant base is an artificial tooth root for embedding in the alveolar bone, and when the dental implant base is embedded in the alveolar bone, the DLC film covers the portion of the dental implant base located from the alveolar bone to the gingival site the dental implant placement serial to claim 1, characterized in that it is. The dental implant base is made of one selected from the group of pure titanium, titanium alloy and ceramic, or the dental implant base is coated with one selected from the group of titanium alloy and ceramic. The dental implant according to claim 1 or 2, wherein The dental implant according to any one of claims 1 to 3 , wherein the DLC film has a thickness of 3 nm to 500 nm. The dental implant according to any one of claims 1 to 4 , wherein the DLC film is further coated with a layer having better affinity with bone cells than DLC. 6. The dental implant according to claim 5, wherein a layer of the dental implant base that is not coated with a DLC film is coated with a layer having better affinity with bone cells than DLC. The dental implant according to claim 5 or 6, wherein the layer having good affinity with bone cells is made of hydroxyapatite. Preparing a dental implant substrate;
Forming a DLC film on at least a part of the dental implant substrate by a plasma CVD method;
Comprising
The DLC film is an amorphous carbon-based thin film containing carbon as a main component, have a Raman spectrum curve obtained by synthesizing the chevron-shaped curve of the chevron-shaped curve and the D band of G band,
Si, SiO ₂ , SiN for improving adhesion between the dental implant substrate and the DLC film between the step of preparing the dental implant substrate and the step of forming the DLC film , and The manufacturing method of the dental implant characterized by further providing the process of arrange | positioning the intermediate film which consists of at least 1 of Nb . In the step of forming the DLC film, a hydrocarbon-based gas containing at least carbon and hydrogen is introduced under a pressure of 0.5 mTorr or more and 500 mTorr or less, and an object to be formed is placed on an electrode connected to a high frequency power source. The method for producing a dental implant according to claim 8 , wherein the electrode is formed by applying a high frequency power of 30 W or more and 3000 W or less to the electrode. The step of forming the DLC film includes introducing a hydrocarbon-based gas containing at least carbon and hydrogen under a pressure of 0.1 mTorr to 100 mTorr, and using a hot filament that is energized by a power source and maintained at a high temperature as a cathode. The electrode placed in the vicinity was used as an anode, a voltage of 10 V to 200 V was applied between both electrodes, a current of 10 mA to 2000 mA was applied to ionize the gas, and the gas was ionized and placed at a certain distance from the cathode and anode. 9. The method for producing a dental implant according to claim 8, wherein a film formation target is placed on the substrate electrode and a film is formed by applying a bias voltage of 20 V to 3000 V to the substrate electrode. .

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