JP4365953B2 - Projection exposure apparatus and device manufacturing method - Google Patents

Description

[0001]
[Technical field to which the invention belongs]
The present invention relates to a projection exposure apparatus that performs illuminance control, and in particular, a projection used in a lithography process for manufacturing a semiconductor element, a liquid crystal display element, an imaging element such as a CCD (charge coupled device), or a thin film magnetic head. The present invention relates to an exposure apparatus . The present invention can be used in a batch exposure type projection exposure apparatus, but in a state where a part of a pattern on a mask is projected onto a photosensitive substrate, the mask and the substrate are scanned in synchronization with the projection optical system. By doing so, it is suitable for a scanning exposure type projection exposure apparatus such as a step-and-scan method, in which the mask pattern is transferred and exposed to each shot area on the substrate sequentially.
[0002]
[Prior art]
FIG. 13 shows a conventional light source that emits light from a specific range with a specific distribution, such as a high-pressure mercury lamp, and controls the illuminance so as to uniformly illuminate the pattern. 1 shows a scanning projection exposure apparatus having a projection optical system that projects onto a substrate.
[0003]
Reference numeral 1 denotes a light source, and 2 denotes a condensing mirror for condensing the light beam emitted from the light source 1. The light rays diverging from 1 are collected, pass through the optical system 3, and enter the internal reflection member 4. The relative position of the light source 1 with respect to the condensing mirror is positioned so that the illuminance of the irradiated surface is maximized.
[0004]
The inner surface reflecting member 4 functions to uniformize the light intensity that is non-uniform on the incident surface of the inner surface reflecting member on the exit surface of the inner surface reflecting member by reflecting the incident light beam a plurality of times on the side surface of the inner surface reflecting member 4. There is. The inner surface reflecting member 4 may be, for example, a mirror disposed facing each other, or may be simply a rod-shaped glass material. In the case of a rod-shaped glass material, it is necessary to design the light beam so that it totally reflects due to the difference in refractive index between the glass material and air when it hits the rod-shaped side surface.
[0005]
Reference numeral 5 denotes an optical system, which projects a uniform light intensity distribution formed on the exit surface of the internal reflection member 4 onto the entrance surface of the fly eye lens 6. The fly eye lens 6 is a bundle of rod lenses whose entrance surface and exit surface are the focal points of the power of each other, and the light beam incident on the rod lens at the same angle is condensed on the exit surface of the rod lens. As a whole, a large number of condensing points are formed on the exit surface of the fly-eye lens.
[0006]
The optical system 7 is an optical system for uniformly illuminating an illumination region by using a condensing point group formed on the exit surface of the fly eye lens 6 as a secondary light source. In the case of a projection exposure apparatus, since it is necessary to control the illumination area, a uniform light intensity distribution is once created at a position conjugate with the mask surface without directly illuminating the illumination area. The position of the stop for controlling the illumination area of 8 is a position conjugate with the mask surface, and the uniform light intensity distribution here is projected by the relay optical system of 9 to illuminate the mask 10 which is the illumination area. It has become. The diaphragm for controlling the illumination area 8 is movable, and the diaphragm can be moved in accordance with the illumination area of the mask.
[0007]
Reference numeral 11 denotes a projection optical system for forming an image of the pattern on the mask 10 on the substrate 12, and the pattern on the mask illuminated by the uniform illumination light realized by the illumination system described above is applied to the substrate. The pattern is transferred by exposing to a photosensitizer. The projection optical system 11 is a telecentric system so that the projection magnification does not change even if the position of the mask 10 or the position of the substrate is shifted in the optical axis direction.
[0008]
Since this conventional technique is a scanning projection exposure apparatus, the mask 10 and the substrate 12 are scanned synchronously. Further, since the illumination area changes with the movement of the mask 10, the diaphragm 8 that controls the illumination area also moves in synchronization.
[0009]
Reference numeral 13 denotes a movable stage on which the substrate 12 and the exposure amount sensor 14 are mounted. The exposure amount at the same position as the substrate 12 is a step for performing scanning exposure on the substrate 12 and a step for exposing a plurality of shots. In order to measure the exposure amount sensor 14, the exposure amount sensor 14 can be moved to the same position where the substrate is present during exposure.
[0010]
A projection exposure apparatus used for manufacturing a semiconductor element or the like can appropriately transfer the pattern on the mask 10 onto the substrate 12, and appropriate exposure depending on the photosensitive agent applied on the substrate 12 and the pattern of the mask 10. The amount needs to be exposed to the substrate 12. For example, when a positive pattern and a negative resist are used, if exposure is performed at an appropriate exposure amount or less, the pattern becomes thin or the line is cut off halfway. On the other hand, if the exposure is more than the appropriate exposure amount, the pattern will be overexposed and the pattern line will be thick and connected to the adjacent line.
[0011]
In order to expose an appropriate exposure amount, it is necessary to control the exposure amount on the substrate 12, but it is not possible to directly measure the exposure amount on the substrate 12 while transferring the pattern on the mask 10 onto the substrate 12. Can not. Further, when the exposure amount is measured in the optical path of the exposure light, the shadow of the exposure amount sensor affects the transfer of the pattern on the mask 10 onto the substrate 12. Therefore, the exposure amount is controlled by measuring the exposure amount at a position conjugate with the substrate and branched from the optical path of the exposure light.
[0012]
15 is a half mirror having a very low reflectivity inserted into the optical path in order to create a position that is conjugate with the substrate and branched from the optical path of the exposure light, and is disposed obliquely with respect to the optical axis of the exposure light. A position that is conjugate with the substrate and branched from the optical path of the exposure light is formed at the position of the exposure amount sensor that branches the exposure light and measures 16 exposure amounts.
[0013]
In order to expose an appropriate exposure amount on the substrate 12, calibration is performed by moving the exposure amount sensor 14 mounted on the stage 13 to the illumination area before exposing the substrate 12. Calibration is performed by performing dummy exposure and comparing the outputs of the exposure amount sensors 14 and 16. When exposing the substrate 12, the control device 17 for controlling the exposure amount performs exposure amount control based on the output of the exposure amount sensor 16.
[0014]
The exposure amount of the scanning projection exposure apparatus is determined by s × I / v from the length s of the illumination area in the scanning direction, the illuminance I on the substrate, and the scanning speed v. Therefore, in order to control the exposure amount of the scanning projection exposure apparatus, at least one of the length s in the scanning direction of the illumination area, the illuminance I on the substrate, or the scanning speed v is controlled. The length s in the scanning direction of the illumination area can be changed by moving the diaphragm 8 that controls the illumination area, and can be changed by changing the scanning speed v of the substrate, the mask, and the scanning speed of the diaphragm that controls the illumination area.
[0015]
In the prior art, the illuminance I on the substrate 12 is changed by a dimming device having a variable transmittance placed in the optical path indicated by 18. The dimming device 18 with variable transmissivity is, for example, a dimming device that changes the transmissivity by arranging several optical members having different transmissivities in a turret shape and selecting them, or a light beam. A dimming device or the like that can change the transmittance by changing the angle of a mirror having a different reflectance depending on the angle is conceivable.
[0016]
A shutter 19 opens and closes. In the batch exposure type projection exposure apparatus, when the exposure amount on the substrate reaches an appropriate exposure amount, the exposure amount can be controlled by closing the shutter. However, in the scanning projection exposure apparatus, since the exposure cannot be completed until the scanning is completed, the exposure amount cannot be controlled by opening and closing the shutter. In a scanning projection exposure apparatus, a shutter is used to suppress deterioration of a glass material in an illumination system when a step between shots or when an exposure operation is not performed.
[0017]
[Problems to be solved by the invention]
As described above, in the prior art, the dimming device 18 having a variable transmittance placed in the optical path is used to change the illuminance on the substrate. However, the optical member that changes the transmittance used in the dimming device 18 has an angle characteristic that the transmittance changes depending on the angle at which the light beam enters the optical member. For example, in a dimming apparatus in which optical members having different transmittances are arranged on a turret and the transmittance is made variable by selecting them, the optical member having a desired transmittance is formed on a multilayered glass. It is made of a film. The multilayer film has a transmittance determined by the refractive index and the thickness of the film. However, an obliquely incident film is apparently thicker than a vertically incident film. For this reason, the transmittance varies depending on the angle at which the light beam enters the optical member. It is not preferable that the transmittance varies depending on the angle because the illumination light has a non-uniform angular distribution after the dimmer. Therefore, it is desirable to arrange the dimming device 18 in a place where the angular distribution of the illumination light incident on the dimming device is not widened. As is well known in optics, in the middle of an optical system, the spread of the angular distribution is large at a place where the spread of the position distribution of the light beam is small, and the spread of the angular distribution is spread at a place where the spread of the position distribution of the light beam is large. small. Therefore, it is desirable to arrange the dimming device 18 at a location where the position distribution is widened.
[0018]
However, since the optical member having a desired transmittance must be arranged so that the illumination light is completely incident, if the position distribution is wide, the diameter of the optical member for dimming becomes large. . As the diameter of the optical member for dimming increases, the dimming device 18 whose transmittance is variable also increases.
[0019]
From the above, in order to arrange the dimming device 18 with variable transmittance in the middle of the optical path, a place where the position distribution is widened in the optical path must be created and a space for arranging the dimming device 18 there must be created. I had to. Therefore, in the dimming device 18 placed in the optical path, the device for controlling the illuminance has a very large design load.
[0020]
Therefore, an object of the present invention is to control the illuminance of a divergent light source such as a high-pressure mercury lamp without using a dimming device with variable transmittance.
[0021]
[Means for Solving the Problems]
The present invention for solving the above-described problems provides a projection exposure apparatus comprising: an illumination optical system that illuminates a mask with light from a light source; and a projection optical system that projects a pattern of the mask onto the substrate. A control device for controlling an exposure amount; and the illumination optical system includes a condensing mirror for condensing light from the light source, and the control device changes a relative position between the light source and the condensing mirror. Using the illuminance data on the substrate acquired in advance, the relative position when the illuminance on the substrate determined based on the exposure amount when exposing the substrate is calculated, The light source that reaches the substrate by changing the relative position between the light source and the condenser mirror from the relative position when the illuminance on the substrate is maximized to the calculated relative position. Of light from It reduces, and adjusting the illumination intensity on the substrate.
[0023]
That is, in the present invention, the illuminance of the illuminated surface is made uniform by moving the relative position of the light source with respect to the condenser mirror from the position where the illuminance is maximum. This makes it possible to control the illuminance without providing a dimming device with variable transmittance in the optical path.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
In an optical system in which the illumination area and the angle of the illumination light incident on the illumination area are determined as in a projection exposure apparatus, a light beam that reaches the illumination area from the optical law called the Helmholtz-Lagrange relationship is in the optical path. There are conditions that must be satisfied.
[0025]
The Helmholtz-Lagrange relationship is a relationship in which two light rays satisfy the object point and the image point, respectively, in the imaging system.
[0026]
This will be described with reference to FIG. It is assumed that two lights diverging from an optical point at a height h from the optical axis at an object point intersect each other at an image point at a height h ′ at an angle α ′. The Helmholtz-Lagrange relationship is between these quantities:
hsinα = h′sinα ′ (1)
There is a relationship.
[0027]
When this relationship is applied to a substantially telecentric projection exposure apparatus, the above-mentioned Helmholtz-Lagrange relationship can be applied to the relationship of the light intensity distribution from the relationship with respect to the two light beams. Using this relationship, the maximum height from the optical axis of the light intensity distribution at the position of the second focal point of the elliptical mirror is h, the maximum angle with the optical axis is α, and the light intensity distribution on the substrate If the maximum height from the axis is h 'and the maximum angle with the optical axis is α', between these quantities,
hsinα = h′sinα ′ (2)
The relationship holds.
[0028]
By the way, in the projection exposure apparatus, since the illumination range on the substrate and the incident light (illumination condition) of the illumination light within the illumination range are determined, h ′ and α ′ on the substrate are determined. . For example, if the illumination area is a circle with a radius of 10 mm, the NA of the projection system is 0.65, and the coherence factor σ value is 0.8, h ′ is 10 mm and sin α ′ is 0.65 × 0. It will be 8. From the equation (2), the light reaching the illumination area is at the second focus of the elliptical mirror,
hsin α = 10 × 0.65 × 0.8 (3)
Therefore, a light intensity distribution represented by the maximum height h from the optical axis and the maximum angle α formed with the optical axis is formed. On the contrary, this relationship indicates that a light beam having a height higher than the above-mentioned h than the above-mentioned h at the second focal point of the elliptical mirror or a light beam having a larger angle with the optical axis than α does not reach the substrate. .
[0029]
On the other hand, the condensing mirror is composed of an elliptical mirror so that light diverging from the vicinity of the first focal point is condensed near the second focal point.
[0030]
As shown in FIG. 2, the light diverging from right above the first focal point O is collected at the second focal point O ′, but the light diverging from the point A away from the first focal point is away from the second focal point. Go through B. From the above-mentioned Helmholtz-Lagrange relationship, for example, a light beam emanating from O reaches the substrate, but a light beam emanating from A does not reach the substrate.
[0031]
The present invention utilizes this, and by moving the relative position of the light source with respect to the collector mirror, for example, in FIG. 2, the position of the light source is changed from the position of the first focus O to the position of A away from the first focus. Move it to a position to reduce the rays that reach the substrate and adjust the illuminance.
[0032]
FIG. 3 shows a result obtained by simulation of the relationship between the position of the light source with respect to the condenser mirror and the illuminance on the substrate under a certain illumination condition. The vertical axis of the graph represents the relative illuminance on the substrate, and the horizontal axis represents the position of the elliptical mirror at the tip of the cathode in the optical axis direction with respect to the opening direction of the elliptical mirror.
[0033]
Referring to FIG. 3, the high-pressure mercury lamp is not a point light source but a light source that emits light from a specific range with a specific distribution. It can be seen that it is not the position directly above, but the position moved by -1.5 mm to the mirror side along the optical axis. For example, when it is attempted to reduce the illuminance to 50% with respect to the maximum illuminance, dimming has been achieved by setting the transmittance of the dimming device disposed in the optical path to 50% in the prior art.
[0034]
In the present invention, attention is paid to the fact that the illuminance changes by changing the light source position as shown in FIG. 3. For example, the illuminance is reduced to 50% of the maximum illuminance by moving the light source position to the mirror side by about 3.5 mm. Lower. Note that the relationship between the illuminance and the relative position of the light source with respect to the condensing mirror depends on the configuration of the illumination system, the illumination conditions, etc., and therefore must be measured and associated in advance. The illuminance can also be adjusted by moving the position of the light source in the direction perpendicular to the optical axis direction.
[0035]
Embodiments of the present invention will be described below with reference to the drawings.
[0036]
FIG. 4 is an optical path diagram of a projection exposure apparatus that performs illuminance control according to the present invention. The members having the same reference numerals as those in the conventional example have the same functions, and therefore, only differences from the conventional example will be described. Reference numeral 20 denotes a movable lamp stage, which can be driven in three axes, and can move in the optical axis direction and move the light source in a direction perpendicular thereto.
[0037]
The lamp is initially adjusted to the maximum illuminance position, and the illuminance I on the substrate is adjusted by moving the lamp stage of 20 to move the relative position of the light source 1 with respect to the condenser mirror 2 from the maximum illuminance position. To do.
[0038]
Prior to exposing the substrate, the relative positional change of the light source 1 with respect to the collector mirror 2 and the relationship between the illuminance I on the substrate and the substrate are correlated in advance. The association may be performed by moving the exposure sensor 14 mounted on the stage to the illumination area and measuring the output of the exposure sensor 14 while moving the light source under each illumination condition. Alternatively, since the relationship between the output of the exposure sensor 14 and the exposure sensor 16 arranged at a position conjugate to the substrate is obtained in advance, the output of the exposure sensor 16 is measured while moving the light source under each illumination condition. By doing so, it is also possible to correlate the relationship between the relative position change of the light source 1 with respect to the collector mirror 2 and the illuminance I on the substrate.
[0039]
In the projection exposure apparatus that performs illuminance control shown in FIG. 4, the illuminance I on the substrate is adjusted only by moving the light source. However, in order to perform desired dimming, the moving distance of the light source is large and the lamp stage is movable. When the range cannot be taken, it can be considered to be used together with the dimming device 18 shown in FIG. In this case, the light reduction means placed in the optical path for adjusting the illuminance on the surface to be illuminated may be used, and fine adjustment may be performed by moving the relative position of the light source with respect to the condenser mirror.
[0040]
In the above description, only the light source 1 is moved, but the condensing mirror 2 may be moved instead of moving the light source.
[0041]
In addition, although light rays that do not reach the substrate will be vignetted at any place in the optical system, this may cause flare. Therefore, in order to prevent flare, an aperture 8 is provided to direct light rays at a specific place. It is more preferable to use Kell.
[0042]
As shown in FIG. 5, a fly-eye lens 21 may be used instead of the internal reflection member 4.
[0043]
FIG. 6 is an optical path diagram of a projection exposure apparatus that performs illumination control according to the present invention using only one light intensity uniformizing member. As shown in FIG. 6, in this apparatus, the change in the light intensity distribution at the second focal point of the condenser mirror 2 directly affects the light intensity distribution on the incident surface of the fly eye lens 6 as the light intensity uniformizing member. It affects. As described above, the present invention adjusts the illuminance by changing the relative position of the light source with respect to the collector mirror and changing the light intensity distribution at the second focal point of the collector mirror. The light intensity distribution on the incident surface of the fly eye lens 6 also changes. Therefore, in the case of the apparatus shown in FIG. 6, it is not preferable for the projection exposure apparatus that requires strict illumination conditions, and the internal reflection member and the haeno eyes lens, or the haeno eye lens and the haeno eye lens, the haeno eye lens are not preferable. There are two equalizing means for illuminating the surface to be illuminated by making both the position distribution and the angle distribution of the light intensity distribution at the second focal point uniform, such as the internal reflection member and the internal reflection member. It is desirable that there be more.
[0044]
FIG. 7 is an optical path diagram of a projection exposure apparatus that performs illuminance control, which is a reference example of the present invention. A variable aperture stop 22 is provided in which a plurality of stops having different openings are arranged in a turret shape. By switching the aperture, the light shielding amount is changed, and the number of light rays incident on the inner reflection member 4 is controlled.
[0045]
In this way, if the variable aperture stop 22 is disposed at an appropriate location in the optical system, for example, behind the optical system 3 as shown in FIG. 7, the optical path can be reduced without using a light-attenuating device with variable transmittance. It is possible to control the number of light rays reaching the illuminated surface located behind.
[0046]
FIG. 8 is an optical path diagram of a projection exposure apparatus that performs illuminance control as another reference example of the present invention. An iris diaphragm 222 is provided . As shown in FIG. 8, instead of the variable aperture stop 22, an iris stop 222 capable of continuously changing the size of the aperture may be provided behind the optical system 3.
[0047]
FIG. 9 is an optical path diagram of a projection exposure apparatus that performs illuminance control as another reference example of the present invention. A zoom optical system 24 is provided . Only two zoom optical systems 24 are shown for simplicity. By changing the magnification of the zoom optical system 24, the size of the light beam at the position of the stop 23 is changed.
[0048]
FIG. 10 is an optical path diagram for explaining the operation of the zoom optical system 24 including the three lenses 24a, 24b, and 24c. As shown in FIG. 10A, when the lenses 24b and 24c are moved to the rear of the optical path, the light flux at the position of the aperture 23 increases, and as shown in FIG. 10B, the lenses 24b and 24c are moved along the optical path. Is moved forward, the light flux at the position of the stop 23 becomes smaller.
[0049]
In this way, if the zoom optical system 24 is arranged at an appropriate place in the optical system, the number of light rays reaching the illuminated surface located behind the optical path can be controlled without using a dimming device with variable transmittance. can do.
[0050]
In FIGS. 7 and 9, one internal reflection member 4 and one fly-eye lens 6 are used as the light intensity uniformizing member. However, if the light intensity uniformizing member is 3 or more, the illumination target is illuminated. The illuminance distribution on the surface is further uniformized.
[0051]
Further, in FIGS. 4, 5, 6, 7, and 9, a divergent light source such as a lamp is used as the light source 1, but a light source that emits parallel light such as a laser may be used.
[0052]
FIG. 11 is a flowchart for explaining a manufacturing process of a semiconductor device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, or a CCD).
[0053]
In the circuit design process of step 1, the circuit design of the semiconductor device is performed.
[0054]
In the mask production process of step 2, a mask on which a designed circuit pattern is formed, that is, a reticle 12 is produced.
[0055]
On the other hand, in the wafer manufacturing process in step 3, the wafer 15 is manufactured using a material such as silicon.
[0056]
In the wafer process step (previous step) of step 4, an actual circuit is formed on the wafer 15 by lithography using the prepared wafer 12 and the wafer 15.
[0057]
In the assembly process (post-process) of step 5, the wafer 15 created in step 4 is chipped. Specifically, dicing, bonding, packaging, etc. are performed.
[0058]
In the inspection process of step 6, inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed.
[0059]
In step 7, the semiconductor device thus completed is shipped.
[0060]
FIG. 12 is a flowchart for explaining step 4 shown in FIG. 11, that is, the wafer process (previous process).
[0061]
In the oxidation process of step 11, the surface of the wafer 15 is oxidized.
[0062]
In the CVD process of step 12, an insulating film is formed on the surface of the wafer by CVD (chemical vapor deposition).
[0063]
In the electrode forming process of step 13, an electrode is formed on the wafer 15 by vapor deposition or the like.
[0064]
In the ion implantation process of step 14, ions are implanted into the wafer 15.
[0065]
In the resist processing step of Step 15, a resist, that is, a photosensitive material is applied to the wafer.
[0066]
In step 16, the wafer 15 is exposed with an image of the circuit pattern of the reticle 12 by the exposure projection apparatus of the present invention.
[0067]
In the developing process in step 17, the exposed wafer is developed.
[0068]
In the etching process of step 18, portions other than the developed resist are removed.
[0069]
In the resist isolating process of step 19, the resist that has become unnecessary after the etching is removed.
[0070]
By repeating these steps, a circuit pattern is formed on the wafer.
[0071]
By such a method for manufacturing a semiconductor device of the present invention, a highly integrated semiconductor device, which has been difficult in the past, is manufactured.
[0072]
【The invention's effect】
According to the present invention, the illuminance on a substrate such as a semiconductor substrate can be controlled without using a dimming device placed in the optical path, and the design load can be reduced.
[Brief description of the drawings]
FIG. 1 is an optical path diagram for explaining the relationship between Helmholz Lagrange. FIG. 2 is an optical path diagram for explaining an emission point and a light collection degree in an elliptical mirror. FIG. 3 shows a relationship between a light source position and illuminance on a substrate. FIG. 4 is a graph of a simulation result. FIG. 4 is an optical path diagram of a projection exposure apparatus that performs illuminance control of the present invention. FIG. 5 is an optical path diagram of a projection exposure apparatus that performs illuminance control of the present invention. FIG. 7 is an optical path diagram of a projection exposure apparatus that performs the illuminance control apparatus of the present invention having only one light intensity uniformizing member. FIG. 7 is a diagram of a projection exposure apparatus that performs illuminance control as a reference example of the present invention having a variable aperture stop. FIG. 8 is an optical path diagram for explaining the function of an iris diaphragm used in place of a variable aperture stop. FIG. 9 is a projection exposure apparatus for performing illuminance control , which is another reference example of the present invention, equipped with a zoom optical system. Optical path diagram [Fig. 10] Zoom FIG. 11 is a flowchart for explaining a semiconductor device manufacturing process using the projection exposure apparatus of the present invention. FIG. 12 is a wafer process flowchart in the semiconductor device manufacturing process. 13) Optical path diagram of a projection exposure apparatus that performs conventional illuminance control
DESCRIPTION OF SYMBOLS 1 Light source 2 Condensing mirror 3 Optical system 4 Internal reflection member 5 Optical system 6 Hayeno-eye lens 7 Optical system 8 Diaphragm which controls an illumination area 9 Relay optical system 10 Mask 11 Projection optical system 12 Substrate 13 Stage 14 Mounted on stage Exposure sensor 15 Half mirror 16 Exposure sensor placed at a conjugate position with the substrate 17 Exposure controller 18 Dimming means 19 Shutter 20 Lamp stage 21 Hayeno lens 222 Iris stop

Claims (4)

In a projection exposure apparatus comprising: an illumination optical system that illuminates a mask with light from a light source; and a projection optical system that projects a pattern of the mask onto a substrate.
A control device for controlling the exposure amount of the substrate;
The illumination optical system has a condenser mirror that collects light from the light source,
The controller is
On the substrate determined based on the exposure amount when the substrate is exposed, using the illuminance data on the substrate acquired in advance by changing the relative position of the light source and the condenser mirror Calculate the relative position when it becomes illuminance,
The relative position between the light source and the condenser mirror is changed from the relative position when the illuminance on the substrate is maximized so as to be the calculated relative position, thereby reaching the substrate. A projection exposure apparatus characterized in that the amount of light from a light source is reduced to adjust the illuminance on the substrate.   2. The projection exposure apparatus according to claim 1, further comprising an exposure amount sensor for measuring an exposure amount of the substrate, wherein the control device controls the exposure amount of the substrate based on an output of the exposure amount sensor. .   2. The projection exposure apparatus according to claim 1, wherein a relationship between the relative position and the illuminance on the substrate is associated in advance under each illumination condition. Exposing the substrate using the projection exposure apparatus according to any one of claims 1 to 3, a device manufacturing method characterized by developing the substrate that has been exposed.

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