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JP3606037B2 - Raw material additional supply equipment for single crystal pulling equipment - Google Patents

Raw material additional supply equipment for single crystal pulling equipment Download PDF

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Publication number
JP3606037B2
JP3606037B2 JP08260798A JP8260798A JP3606037B2 JP 3606037 B2 JP3606037 B2 JP 3606037B2 JP 08260798 A JP08260798 A JP 08260798A JP 8260798 A JP8260798 A JP 8260798A JP 3606037 B2 JP3606037 B2 JP 3606037B2
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raw material
single crystal
supply pipe
crystal pulling
additional supply
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JP08260798A
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JPH11263693A (en
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勇 原田
篤志 尾崎
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、例えばチョクラルスキー法による単結晶引上げ装置のルツボ内に固形原料を追加供給する装置に関する。
【0002】
【従来の技術】
従来、チョクラルスキー法による単結晶引上げ装置において、最初の単結晶を育成して引上げた後、融液原料の減少分に見合う量の固形原料をルツボ内に追加供給(以下、リチャージという。)して溶融し、再度次の単結晶を育成して引上げ、これを繰返すことで同一のルツボから複数本の単結晶棒を製造する技術が知られているが、このような固形原料が粒状或いは小塊状の場合には、固形原料をルツボ内の融液に直接投入すると融液飛沫が跳ね上がってルツボの外に飛出したり、供給管等に付着するような不具合がある。
【0003】
そこで、例えば特開昭62−260791号のように、当初の単結晶を引上げた後、ルツボ内に残留する融液原料の表面をある程度固化し、この固化面に向けて原料供給管から固形原料を供給した後、溶融させるような技術が採用され、この技術では、原料供給管の先端が固化面から離れ過ぎると固形原料が跳ね返ってルツボの外に飛出したり、小塊状の原料がルツボ内壁に衝突してルツボにワレ、カケが生ずるといった不具合があるため、オペレータが目視で原料供給管の先端と固化面との距離を一定に設定するようにしている。
【0004】
【発明が解決しようとする課題】
ところが目視による距離の設定は、オペレータの作業工数が増え、しかも距離を常に一定にセットするのが難しいため、石英管等からなる原料供給管の先端部を損傷させたり、円滑に原料の供給が出来なかったりする等の問題がある。
【0005】
そこで本発明はルツボ内の融液表面を固化させて固形原料を追加供給するにあたり、固化面と原料供給管の距離を常に一定に設定することが出来、しかもオペレータの作業工数の削減を図ることを目的とする。
【0006】
【課題を解決するための手段】
上記目的を達成するため本発明は、請求項1において、ルツボ内で溶融した多結晶体の融液原料の表面を固化し、この固化面上に向けて原料供給管から固形原料を供給するようにした単結晶引上げ装置の原料追加供給装置において、固化面の位置を検出する固化面位置検出手段と、原料供給管の位置を検出する供給管位置検出手段と、これら各手段の検出データから原料供給管を移動制御して固化面と原料供給管との距離を規定値にセットする制御手段を設けた。
【0007】
すなわち、ルツボの固化面の位置はルツボ内に残留する融液の量によって変化し、また原料供給管は、原料をルツボに供給する時は先端が固化面に近接する位置まで前進し、それ以外はルツボから離れた位置に後退し得るよう進退動自在にされている。
そこで、固化面位置検出手段で固化面の位置を検出し、供給管位置検出手段で原料供給管の位置を検出するとともに、これら検出データを制御手段に出力し、制御手段で規定の距離との差を求め、この差を補正するよう原料供給管を移動制御すれば、供給管の先端と固化面とを常に一定の距離に設定することが出来、安定した原料供給が可能となる。またオペレータが目視で作業するような工数が削減される。
【0008】
また、融液原料に対して固形原料を追加供給する場合として、バッチ方式で原料の追加を繰返して、1つのルツボから複数の単結晶棒を製造するいわゆるマルチプーリング法(Semiconductor Silicon Crystal Technology, Fumio Shimura,P178−P189,1989参照)における追加供給の他、ルツボへの初期チャージ時に、融液原料の不足分を補充して所望量に調整するため等の固形原料を追加供給する場合も含まれる。
【0009】
また請求項2では、固化面位置検出手段として、種結晶を固化面に接触させた時に種結晶を吊持する吊具とルツボを支持するルツボ支持部材との間に電気的導通を生じさせて導電状態を検知する導電検知部と、種結晶を降下させる時に固化面上の基準位置から前記導電検知部による導電検知までの降下量を測定する降下量測定部を設けた。
【0010】
このように種結晶を降下させる際、基準位置から固化面接触までの種結晶の降下量を測定すれば、固化面の位置が検出出来る。この際、種結晶と固化面の接触は吊具とルツボ支持部材間の導電状態で判断するが、ルツボの材料として一般的に常温で絶縁体である石英ルツボが使用されている。
しかしこの石英ルツボは、1000℃以上の高温になると導電性を帯びるようになるため、固化面検出時には吊具とルツボ支持部材との間に導電状態を作り出すことが出来る。勿論、吊具、ルツボ支持部材は導電性素材から形成しておく。また降下量測定部としては、例えば種結晶を上下動させる駆動モータの回転数等に対応したパルス数を発生するパルスジェネレータ等が適用出来る。
【0011】
また請求項3では、前記固化面位置検出手段は、融液面の初期位置を基準位置に設定するための融液面初期位置設定手段と兼用するようにした。
この融液面初期位置設定手段は、単結晶引上げ時に直径制御用のCCDセンサ等と引上げ初期の融液面との間隔を一定に設定するため、一般的な既存の設備に既に採用されている構成であり、種結晶と融液面の接触状態を電気的導通で検知する導電検知機構とか、基準位置からの種結晶の降下量を測定する降下量測定機構とか、ルツボを上下動させるルツボ駆動機構とか、ルツボの上下移動量を測定する移動量測定機構等を備えている(特公平5−59876号参照)。
従って、この固化面位置検出手段を構成するにあたり、融液面初期位置設定手段の一部を利用するようにすれば、既存の設備の最大活用が図られ、より安価に且つ簡易に構成できる。
【0012】
また請求項4では、供給管位置検出手段として、原料供給管の進退動用駆動源の駆動量を検出する駆動量検出部を設けた。
そしてこの駆動量検出部によって駆動源の駆動量を検出すれば原料供給管の進退動量を知ることが出来、原料供給管の位置が検出出来る。
このような進退動駆動源として、例えばモータ等が適用出来、また駆動量検出部として、ロータリエンコーダ等が適用出来る。
【0013】
そして請求項5では、固化面上に向けた原料供給管による固形原料の供給を自動化するようにした。
すなわち、例えば固化面と原料供給管の距離が規定値に設定されると、制御手段のシーケンサ等によって原料供給装置等を作動させ、自動的に原料の供給が開始されるようにしておけば、オペレータの作業工数を一層削減することが出来る。
【0014】
【発明の実施の形態】
本発明の実施の形態について添付した図面に基づき説明する。
ここで図1は本発明に係る原料追加供給装置の原料供給機構部の構成概要図、図2は本発明に係る固化面位置検出手段の説明図、図3はリチャージの一例を示す説明図である。
【0015】
本発明に係る単結晶引上げ装置の原料追加供給装置は、例えばチョクラルスキー法によって多結晶体の融液原料から単結晶を製造するにあたり、本来1度しか使えないルツボから複数本の単結晶を製造するいわゆるマルチプーリング法による製造方法において、最初の単結晶を引上げた後、ルツボ内の融液の表面を固化し、この固化面上に減少した融液原料分に見合う量の粒状またはナゲット状等の固形原料をリチャージするような時の改良技術として提案されている。
【0016】
すなわち、上記リチャージ方法を簡単に説明すると、図3(a)に示すように、ルツボ10内の多結晶体原料を加熱溶融させて融液11とし、この融液11に(b)に示すような種結晶12を接触させて静かに回転させながら引上げていくことで単結晶13を育成し、(c)に示すような1本目の単結晶棒を製造する。
【0017】
次いで、単結晶13の引上げに伴ってルツボ10内の融液11が減少するため、次の単結晶育成のためのリチャージが行われる。
このリチャージは、融液減少分に見合う量の粒状またはナゲット状の固形原料をルツボ内に投入することで行い、この時の融液11からの飛沫の発生等を防止するため、(d)に示すように、予め融液11の表面に固化面11kを形成した後、(e)に示すように、原料供給管14から固化面11k上に固形原料15が投入される。
【0018】
そして固形原料15の投入が完了すると、固形原料15は溶融されて所望量の融液となり、(f)に示すように、この融液11に向けて次の種結晶12による育成引上げが開始され、同様なサイクルが繰返される。
【0019】
以上のようなリチャージ方法において、本発明に係る単結晶引上げ装置の原料追加供給装置は、原料供給管14の先端と固化面11kの距離を正確に設定し、またこの設定を自動的に行うことでオペレータの作業の軽減化が図れるようにされており、図1に示すような原料供給機構部1に構成される供給管位置検出手段2と、図2に示すような固化面位置検出手段3と、これら供給管位置検出手段2及び固化面位置検出手段3から送られる検出信号を処理して原料供給管14を移動制御する制御手段4を備えている。
【0020】
そして供給管位置検出手段2は、原料供給管14の位置を検出出来るようにされ、固化面位置検出手段3は、固化面11kの位置を検出出来るようにされている。
【0021】
前記原料供給機構部1は、図1に示すように、供給タンク5に貯溜される固体原料をゲートバルブ6を通して導通管7に送り込むことが出来るようにされ、前記原料供給管14は、この導通管7より大径で且つ導通管7に連通状態にされるとともに、進退動機構によって導通管7の外周面に沿って進退動自在にされている。
【0022】
すなわちこの進退動機構は、進退動用駆動源としての駆動モータ8と、この駆動モータ8の出力軸からタイミングベルト16、タイミングギヤ17を介して回転が伝達されるボールネジ18を備えており、このボールネジ18の回転によって原料供給管14が進退動するようにしている。そして前記駆動モータ8の出力軸には、駆動量検出部としてのロータリーエンコーダ20を取付け、駆動モータ8の回転角を電気的パルスに変換して検出し、この検出データを制御手段4に出力するようにしている。
そして駆動モータ8及びロータリーエンコーダ20等によって前記供給管位置検出手段2を構成し、原料供給管14の先端の位置を知ることが出来るようにしている。
【0023】
一方、固化面位置検出手段3は、図2に示すように、前記ルツボ10内に残留する融液11の固化面11kの位置を検出するようにされ、このルツボ10を保持するグラファイト等からなるサセプタ21を導電性のルツボ支持軸22で支持するとともに、このルツボ支持軸22を導電性の軸受23で軸支している。
【0024】
また前記種結晶12は、吊具である導電性のワイヤ24の下端部のホルダ25によって保持されており、前記ワイヤ24の上端部は、モータ26の駆動によって回転自在なドラム27に巻き付けられ、ドラム27の回転によって上下動自在にされている。
【0025】
そしてドラム27を支持するベース28と種結晶12の間、及び前記ルツボ10と軸受23の間は電気的導通が図られており、またベース28と軸受23の間には、抵抗器30を介して電源31から延びる配線が接続されている。またこの配線には、電源31から供給される基準電圧V0 、及び種結晶12を固化面11kに接触させた際に抵抗器30の端子に生じる電圧Vを比較する導電検知部としての比較器32を接続しており、この比較器32の信号を制御手段4に送るようにしている。
【0026】
ここで、比較器32に供給される基準電圧V0 は、発生電圧Vより小さい値に設定され、V0 <Vとされている。
すなわち、各種条件を変えて、種結晶12と固化面11kを接触させた時の発生電圧Vを多数実測し、接触中は常にV0 <Vが成立するような基準電圧V0 を求め、この基準電圧V0 を基準にして接触時の導電変化を検出するようにしている。
【0027】
また、前記ワイヤ24が巻き付けられるドラム27の回転軸には、ドラム27の正・逆方向の回転量に比例してパルスを発生するパルスジェネレータ33と、このパルスをカウントするカウンタ34が設けられており、またこのカウンタ34には、種結晶12が降下する途中に種結晶12の通過を光センサ等で検知する基準位置検出器35の検出信号が入力されるようになっている。そしてカウンタ34の出力は制御手段4に送られるようにされている。
【0028】
このような構成の固化面位置検出手段3において、種結晶12を下降させる途中で基準位置検出器35により種結晶12の通過時点を検出し、この時点から種結晶12が固化面11kに接触する時点(ベース28と軸受23間が導通状態になることで検知可能)までの距離を降下量測定部としてのパルスジェネレータ33のパルス数で検出すれば、基準位置から固化面11kまでの距離Hが検出され、固化面11kの位置が検出出来る。
【0029】
制御手段4は、前記原料供給管14の位置データと固化面11kの位置データが入力されると、規定値からの差(補正量)を求めるよう演算処理し、この演算された補正量に基づいて、図1の駆動モータ8を駆動制御する。
このため、原料供給管14と固化面11kの距離を常に一定に設定することが出来、オペレータの作業の軽減化を図ることが出来る。
【0030】
ところで、このように原料供給管14と固化面11kの距離が一定に設定されると、制御手段4によりゲートバルブ6或いは不図示の原料計量フィーダ等を制御して自動的に固形原料の供給が開始されるようにしても良い。このような自動化によって、オペレータの作業工程を一層軽減することが出来、生産性の向上を図ることも可能となる。
【0031】
また、前記固化面位置検出手段3は、不図示の融液面初期位置設定手段の既存の設備を利用するようにしても良い。すなわち、融液面初期位置設定手段は、特公平5−59876号にも示されるように、最初に種結晶12が融液11に接触する時点での融液面の位置を調整して、直径制御のための監視用CCDカメラ等からの距離を一定に設定する機構であり、このような融液面初期位置設定手段は一般的な引上げ装置で既に採用されているため、この機構の一部を利用すればより安価で簡易に構成出来る。
【0032】
尚、本発明は、上記実施形態に限定されるものではない。上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。
例えば上記実施形態では、適用される場合として1つのルツボから複数本の単結晶を引上げるマルチプーリング法の場合を例にとって説明したが、最初に多結晶体原料をルツボ内に投入して溶融させる際、融液量の不足分を補充して所望量にする時等の固形原料の追加供給時にも適用出来る。
また原料供給機構部1の構成等も任意である。
【0033】
【発明の効果】
以上のように本発明に係る単結晶引上げ装置の原料追加供給装置は、請求項1のように、固化面の位置を検出する固化面位置検出手段と、原料供給管の位置を検出する供給管位置検出手段を設け、これら各手段の検出データを制御手段に入力して原料供給管を移動制御することで、固化面と原料供給管の先端との距離を規定値に設定するようにしたため、常に一定の距離に設定出来、安定した状態で原料供給することが可能となる。またオペレータの作業工数を削減することが出来る。
また請求項2のように、固化面位置検出手段として、種結晶を降下させる時の種結晶の降下量で判断するようにし、また種結晶と固化面の接触を電気的導通で検出するようにすれば、固化面の位置を正確に検出出来る。
【0034】
また請求項3のように、前記固化面位置検出手段を、融液面初期位置設定手段と兼用するようにすれば、既存の設備を最大に活用して、より安価に且つ簡易に構成できる。
また請求項4のように、供給管位置検出手段として、原料供給管の進退動用駆動源の駆動量を検出する駆動量検出部を設ければ、原料供給管の位置を正確に検出出来る。
そして請求項5のように、固形原料の供給を自動化するようにすれば、オペレータの作業工数を一層削減することが出来る。
【図面の簡単な説明】
【図1】本発明に係る原料追加供給装置の原料供給機構部の構成概要図である。
【図2】本発明に係る固化面位置検出手段の説明図である。
【図3】リチャージの一例を示す説明図である。
【符号の説明】
1…原料供給機構部、 2…供給管位置検出手段、
3…固化面位置検出手段、 4…制御手段、 5…供給タンク、
6…ゲートバルブ、 7…導通管、 8…駆動モータ、 10…ルツボ、
11…融液、 11k…固化面、 12…種結晶、 13…単結晶、
14…原料供給管、 15…固形原料、 16…タイミングベルト、
17…タイミングギヤ、 18…ボールネジ、
20…ロータリーエンコーダ、 21…サセプタ、 22…ルツボ支持軸、
23…軸受、 24…ワイヤ、 25…ホルダ、 26…モータ、
27…ドラム、 28…ベース、 30…抵抗器、 31…電源、
32…比較器、 33…パルスジェネレータ、 34…カウンタ、
35…基準位置検出器。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an apparatus for additionally supplying a solid raw material into a crucible of a single crystal pulling apparatus using, for example, the Czochralski method.
[0002]
[Prior art]
Conventionally, in a single crystal pulling apparatus using the Czochralski method, after the first single crystal is grown and pulled, a solid raw material in an amount corresponding to the decrease in the melt raw material is additionally supplied into the crucible (hereinafter referred to as recharge). Then, the technique for producing a plurality of single crystal rods from the same crucible by growing and pulling up the next single crystal and pulling it up again and repeating this is known. In the case of a small lump, there is a problem that if the solid raw material is directly put into the melt in the crucible, the melt splashes up and jumps out of the crucible or adheres to the supply pipe.
[0003]
Therefore, for example, as disclosed in JP-A-62-260791, after pulling up the original single crystal, the surface of the melt raw material remaining in the crucible is solidified to some extent, and the solid raw material is fed from the raw material supply pipe toward this solidified surface. In this technology, if the tip of the raw material supply pipe is too far from the solidification surface, the solid raw material will bounce off and jump out of the crucible, Therefore, the operator sets the distance between the tip of the raw material supply pipe and the solidified surface to be constant by visual inspection.
[0004]
[Problems to be solved by the invention]
However, setting the distance by visual inspection increases the number of man-hours for the operator and it is difficult to always set the distance constant. Therefore, the tip of the raw material supply pipe made of a quartz tube or the like is damaged, or the raw material can be supplied smoothly. There are problems such as not being able to do it.
[0005]
Therefore, in the present invention, when the surface of the melt in the crucible is solidified and the solid raw material is additionally supplied, the distance between the solidified surface and the raw material supply pipe can be always set to be constant, and the work manpower of the operator can be reduced. With the goal.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, according to the present invention, in claim 1, the surface of the polycrystalline melt material melted in the crucible is solidified, and the solid material is supplied from the material supply pipe toward the solidified surface. In the raw material additional supply device of the single crystal pulling apparatus, the solidified surface position detecting means for detecting the position of the solidified surface, the supply pipe position detecting means for detecting the position of the raw material supply pipe, and the raw material from the detection data of these means Control means for moving the supply pipe to control the distance between the solidified surface and the raw material supply pipe to a specified value was provided.
[0007]
That is, the position of the solidified surface of the crucible changes depending on the amount of melt remaining in the crucible, and the raw material supply pipe advances to a position where the tip is close to the solidified surface when supplying the raw material to the crucible. Can be moved forward and backward so that it can be moved back to a position away from the crucible.
Therefore, the position of the solidified surface is detected by the solidified surface position detecting means, the position of the raw material supply pipe is detected by the supply pipe position detecting means, and these detection data are output to the control means, and the control means outputs the detected distance from the specified distance. By obtaining the difference and controlling the movement of the raw material supply pipe so as to correct this difference, the tip of the supply pipe and the solidified surface can always be set at a constant distance, and stable raw material supply can be achieved. Further, the number of man-hours required for the operator to work visually is reduced.
[0008]
In addition, in the case of additionally supplying the solid raw material to the melt raw material, the so-called multi-pooling method (Semiconductor Silicon Crystal Technology, Fumio) in which a plurality of single crystal rods are manufactured from one crucible by repeatedly adding the raw material in a batch system. In addition to the additional supply in Shimura, P178-P189, 1989), it also includes the case of additionally supplying solid raw materials for replenishing the shortage of the melt raw material and adjusting to the desired amount at the initial charge to the crucible .
[0009]
According to a second aspect of the present invention, as the solidified surface position detecting means, an electrical continuity is generated between a hanging tool for holding the seed crystal and a crucible support member for supporting the crucible when the seed crystal is brought into contact with the solidified surface. A conductivity detecting unit for detecting the conductive state and a descent amount measuring unit for measuring the amount of descent from the reference position on the solidified surface to the conductivity detection by the conductivity detecting unit when the seed crystal is lowered are provided.
[0010]
When the seed crystal is lowered in this way, the position of the solidified surface can be detected by measuring the amount of fall of the seed crystal from the reference position to the solidified surface contact. At this time, the contact between the seed crystal and the solidified surface is determined by the conductive state between the hanger and the crucible support member, but a quartz crucible which is an insulator at ordinary temperature is generally used as a material for the crucible.
However, since this quartz crucible becomes conductive when the temperature is higher than 1000 ° C., a conductive state can be created between the hanger and the crucible support member when detecting the solidified surface. Of course, the hanger and the crucible support member are made of a conductive material. For example, a pulse generator that generates the number of pulses corresponding to the number of rotations of a drive motor that moves the seed crystal up and down can be used as the amount-of-fall measurement unit.
[0011]
According to a third aspect of the present invention, the solidified surface position detecting means is also used as a melt surface initial position setting means for setting the initial position of the melt surface as a reference position.
This melt surface initial position setting means has already been adopted in general existing equipment in order to set a constant distance between the diameter control CCD sensor or the like and the melt surface at the initial pulling time when pulling the single crystal. It is a structure, a conduction detection mechanism that detects the contact state between the seed crystal and the melt surface by electrical conduction, a descent amount measurement mechanism that measures the descent amount of the seed crystal from the reference position, or a crucible drive that moves the crucible up and down And a mechanism for measuring the amount of vertical movement of the crucible and the like (see Japanese Patent Publication No. 5-59876).
Therefore, when the solidified surface position detecting means is configured, if a part of the melt surface initial position setting means is used, the existing equipment can be utilized to the maximum, and it can be configured more inexpensively and easily.
[0012]
According to a fourth aspect of the present invention, a drive amount detector for detecting the drive amount of the drive source for advancing and retracting the raw material supply pipe is provided as the supply pipe position detecting means.
If the drive amount of the drive source is detected by this drive amount detection unit, the advance / retreat amount of the raw material supply pipe can be known, and the position of the raw material supply pipe can be detected.
For example, a motor or the like can be applied as such an advance / retreat drive source, and a rotary encoder or the like can be applied as the drive amount detection unit.
[0013]
According to the fifth aspect of the present invention, the supply of the solid raw material by the raw material supply pipe directed on the solidified surface is automated.
That is, for example, when the distance between the solidified surface and the raw material supply pipe is set to a specified value, the raw material supply device and the like are operated by the sequencer of the control means and the supply of the raw material is automatically started. Operator man-hours can be further reduced.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described with reference to the accompanying drawings.
Here, FIG. 1 is a schematic configuration diagram of a raw material supply mechanism section of a raw material additional supply apparatus according to the present invention, FIG. 2 is an explanatory diagram of solidified surface position detecting means according to the present invention, and FIG. 3 is an explanatory diagram showing an example of recharging. is there.
[0015]
The raw material additional supply device of the single crystal pulling apparatus according to the present invention, for example, in producing a single crystal from a polycrystalline melt raw material by the Czochralski method, a plurality of single crystals from a crucible that can only be used once. In the manufacturing method based on the so-called multi-pooling method, after the first single crystal is pulled up, the surface of the melt in the crucible is solidified, and in the form of granules or nuggets in an amount suitable for the reduced melt raw material on the solidified surface It has been proposed as an improved technique for recharging solid materials such as the above.
[0016]
That is, the recharging method will be briefly described. As shown in FIG. 3A, the polycrystalline raw material in the crucible 10 is heated and melted to form a melt 11, and the melt 11 is shown in FIG. A single crystal 13 is grown by bringing the seed crystal 12 into contact and pulling it gently while rotating to produce a first single crystal rod as shown in FIG.
[0017]
Next, since the melt 11 in the crucible 10 decreases as the single crystal 13 is pulled up, recharge for the next single crystal growth is performed.
This recharge is performed by putting a granular or nugget-like solid raw material in an amount suitable for the amount of decrease in the melt into the crucible, and in order to prevent the occurrence of splashes from the melt 11 at this time, (d) As shown, after the solidified surface 11k is formed on the surface of the melt 11 in advance, as shown in (e), the solid raw material 15 is introduced from the raw material supply pipe 14 onto the solidified surface 11k.
[0018]
When the charging of the solid raw material 15 is completed, the solid raw material 15 is melted to obtain a desired amount of melt, and as shown in (f), the growth pulling by the next seed crystal 12 is started toward the melt 11. A similar cycle is repeated.
[0019]
In the recharging method as described above, the raw material additional supply device of the single crystal pulling apparatus according to the present invention accurately sets the distance between the tip of the raw material supply pipe 14 and the solidified surface 11k, and automatically performs this setting. Thus, the operator's work can be reduced. The supply pipe position detecting means 2 configured in the raw material supply mechanism section 1 as shown in FIG. 1 and the solidified surface position detecting means 3 as shown in FIG. And a control means 4 for processing the detection signals sent from the supply pipe position detection means 2 and the solidified surface position detection means 3 to control the movement of the raw material supply pipe 14.
[0020]
The supply pipe position detection means 2 can detect the position of the raw material supply pipe 14, and the solidified surface position detection means 3 can detect the position of the solidified surface 11k.
[0021]
As shown in FIG. 1, the raw material supply mechanism section 1 is configured so that a solid raw material stored in a supply tank 5 can be fed into a conduction pipe 7 through a gate valve 6. The pipe 7 has a diameter larger than that of the pipe 7 and is in communication with the conduction pipe 7, and is movable forward and backward along the outer peripheral surface of the conduction pipe 7 by an advance / retreat mechanism.
[0022]
That is, the advance / retreat mechanism includes a drive motor 8 as an advance / retreat drive source, and a ball screw 18 whose rotation is transmitted from the output shaft of the drive motor 8 via the timing belt 16 and the timing gear 17. The raw material supply pipe 14 is moved forward and backward by the rotation of 18. A rotary encoder 20 as a drive amount detection unit is attached to the output shaft of the drive motor 8 to detect the rotation angle of the drive motor 8 by converting it into an electrical pulse, and this detection data is output to the control means 4. I am doing so.
The drive motor 8 and the rotary encoder 20 constitute the supply pipe position detecting means 2 so that the position of the tip of the raw material supply pipe 14 can be known.
[0023]
On the other hand, as shown in FIG. 2, the solidified surface position detecting means 3 is configured to detect the position of the solidified surface 11k of the melt 11 remaining in the crucible 10, and is made of graphite or the like that holds the crucible 10. The susceptor 21 is supported by a conductive crucible support shaft 22, and the crucible support shaft 22 is supported by a conductive bearing 23.
[0024]
The seed crystal 12 is held by a holder 25 at the lower end of a conductive wire 24 that is a hanging tool, and the upper end of the wire 24 is wound around a drum 27 that is rotatable by driving of a motor 26. It can be moved up and down by the rotation of the drum 27.
[0025]
Electrical connection is established between the base 28 supporting the drum 27 and the seed crystal 12 and between the crucible 10 and the bearing 23, and a resistor 30 is interposed between the base 28 and the bearing 23. Wiring extending from the power source 31 is connected. Further, a comparator 32 serving as a conduction detector for comparing the reference voltage V0 supplied from the power supply 31 and the voltage V generated at the terminal of the resistor 30 when the seed crystal 12 is brought into contact with the solidified surface 11k is provided on this wiring. And the signal of the comparator 32 is sent to the control means 4.
[0026]
Here, the reference voltage V0 supplied to the comparator 32 is set to a value smaller than the generated voltage V, and V0 <V.
That is, by changing various conditions, a number of generated voltages V when the seed crystal 12 and the solidified surface 11k are brought into contact with each other are actually measured, and a reference voltage V0 that always satisfies V0 <V is obtained during the contact. A change in conductivity at the time of contact is detected with reference to V0.
[0027]
A rotating shaft of the drum 27 around which the wire 24 is wound is provided with a pulse generator 33 that generates a pulse in proportion to the amount of rotation of the drum 27 in the forward and reverse directions, and a counter 34 that counts the pulse. The counter 34 receives a detection signal of a reference position detector 35 that detects passage of the seed crystal 12 with an optical sensor or the like while the seed crystal 12 is descending. The output of the counter 34 is sent to the control means 4.
[0028]
In the solidified surface position detecting means 3 configured as described above, the reference position detector 35 detects the passage time of the seed crystal 12 while the seed crystal 12 is being lowered, and the seed crystal 12 comes into contact with the solidified surface 11k from this point. If the distance up to the point in time (detectable by the connection between the base 28 and the bearing 23) is detected by the number of pulses of the pulse generator 33 as the descent amount measuring unit, the distance H from the reference position to the solidified surface 11k is obtained. As a result, the position of the solidified surface 11k can be detected.
[0029]
When the position data of the raw material supply pipe 14 and the position data of the solidified surface 11k are input, the control means 4 performs an arithmetic process so as to obtain a difference (correction amount) from a specified value, and based on the calculated correction amount. The drive motor 8 shown in FIG.
For this reason, the distance between the raw material supply pipe 14 and the solidified surface 11k can always be set constant, and the operator's work can be reduced.
[0030]
By the way, when the distance between the raw material supply pipe 14 and the solidified surface 11k is set to be constant as described above, the control unit 4 controls the gate valve 6 or a raw material measuring feeder (not shown) to automatically supply the solid raw material. It may be started. By such automation, the operator's work process can be further reduced, and productivity can be improved.
[0031]
The solidified surface position detecting means 3 may use existing equipment of a melt surface initial position setting means (not shown). That is, the melt surface initial position setting means adjusts the position of the melt surface when the seed crystal 12 first contacts the melt 11 as shown in Japanese Patent Publication No. 5-59876. This is a mechanism for setting a distance from a monitoring CCD camera or the like for control to be constant, and such a melt surface initial position setting means has already been adopted in a general pulling device. If it is used, it can be configured more inexpensively and easily.
[0032]
The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
For example, in the above-described embodiment, the case of the multi-pooling method in which a plurality of single crystals are pulled out from one crucible is described as an example. However, first, a polycrystalline material is put into a crucible and melted. At this time, the present invention can also be applied at the time of additional supply of solid raw materials such as when a shortage of the melt amount is replenished to a desired amount.
The configuration of the raw material supply mechanism unit 1 is also arbitrary.
[0033]
【The invention's effect】
As described above, the raw material additional supply device of the single crystal pulling apparatus according to the present invention is the solidified surface position detecting means for detecting the position of the solidified surface and the supply pipe for detecting the position of the raw material supply pipe. Since the position detection means is provided and the detection data of each means is input to the control means to control the movement of the raw material supply pipe, the distance between the solidification surface and the tip of the raw material supply pipe is set to a specified value. A constant distance can always be set, and the raw material can be supplied in a stable state. In addition, the operator's work man-hours can be reduced.
According to a second aspect of the present invention, as the solidified surface position detecting means, the determination is made based on the amount of seed crystal lowered when the seed crystal is lowered, and the contact between the seed crystal and the solidified surface is detected by electrical conduction. Then, the position of the solidified surface can be accurately detected.
[0034]
Further, if the solidified surface position detecting means is also used as the melt surface initial position setting means as in the third aspect, the existing equipment can be utilized to the maximum and can be configured more inexpensively and easily.
Further, if the drive amount detection unit for detecting the drive amount of the drive source for advancing and retreating the raw material supply pipe is provided as the supply pipe position detecting means as in claim 4, the position of the raw material supply pipe can be detected accurately.
If the supply of the solid raw material is automated as in claim 5, the number of work steps for the operator can be further reduced.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a raw material supply mechanism section of a raw material additional supply device according to the present invention.
FIG. 2 is an explanatory diagram of solidified surface position detecting means according to the present invention.
FIG. 3 is an explanatory diagram showing an example of recharging.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Raw material supply mechanism part, 2 ... Supply pipe position detection means,
3 ... Solidified surface position detecting means, 4 ... Control means, 5 ... Supply tank,
6 ... Gate valve, 7 ... Conducting tube, 8 ... Drive motor, 10 ... Crucible,
11 ... Melt, 11k ... Solidified surface, 12 ... Seed crystal, 13 ... Single crystal,
14 ... Raw material supply pipe, 15 ... Solid raw material, 16 ... Timing belt,
17 ... Timing gear, 18 ... Ball screw,
20 ... Rotary encoder, 21 ... Susceptor, 22 ... Crucible support shaft,
23 ... Bearing, 24 ... Wire, 25 ... Holder, 26 ... Motor,
27 ... Drum, 28 ... Base, 30 ... Resistor, 31 ... Power supply,
32 ... Comparator 33 ... Pulse generator 34 ... Counter
35: Reference position detector.

Claims (5)

ルツボ内で溶融した多結晶体の融液原料の表面を固化し、この固化面上に向けて原料供給管から固形原料を供給するようにした単結晶引上げ装置の原料追加供給装置であって、前記固化面の位置を検出する固化面位置検出手段と、前記原料供給管の位置を検出する供給管位置検出手段と、これら各手段の検出データから原料供給管を移動制御して固化面と原料供給管との距離を規定値にセットする制御手段を備えたことを特徴とする単結晶引上げ装置の原料追加供給装置。A raw material additional supply device for a single crystal pulling apparatus that solidifies the surface of a polycrystalline melt material melted in a crucible and supplies a solid raw material from a raw material supply pipe toward the solidified surface, Solidification surface position detection means for detecting the position of the solidification surface, supply pipe position detection means for detecting the position of the raw material supply pipe, and movement control of the raw material supply pipe from the detection data of these means to control the solidification surface and the raw material A raw material additional supply apparatus for a single crystal pulling apparatus, comprising control means for setting a distance from a supply pipe to a specified value. 請求項1に記載の単結晶引上げ装置の原料追加供給装置において、前記固化面位置検出手段は、種結晶を固化面に接触させた時に種結晶を吊持する吊具とルツボを支持するルツボ支持部材との間に電気的導通を生じさせて導電状態を検知する導電検知部と、種結晶を降下させる時に固化面上の基準位置から前記導電検知部による導電検知までの降下量を測定する降下量測定部を備えたことを特徴とする単結晶引上げ装置の原料追加供給装置。2. The raw material additional supply device for a single crystal pulling apparatus according to claim 1, wherein the solidified surface position detecting means is a crucible support for supporting a crucible and a hanging tool for holding the seed crystal when the seed crystal is brought into contact with the solidified surface. A conductivity detector that detects electrical conduction between the member and a conductive state, and a drop that measures the amount of descent from the reference position on the solidified surface to the conductivity detected by the conductivity detector when the seed crystal is lowered. A raw material additional supply apparatus for a single crystal pulling apparatus, comprising a quantity measuring unit. 請求項2に記載の単結晶引上げ装置の原料追加供給装置において、前記固化面位置検出手段は、融液面の初期位置を基準位置に設定するための融液面初期位置設定手段と兼用されることを特徴とする単結晶引上げ装置の原料追加供給装置。3. The raw material additional supply apparatus for a single crystal pulling apparatus according to claim 2, wherein the solidified surface position detecting means is also used as a melt surface initial position setting means for setting the initial position of the melt surface as a reference position. The raw material additional supply apparatus of the single crystal pulling apparatus characterized by the above-mentioned. 請求項1乃至請求項3のいずれか1項に記載の単結晶引上げ装置の原料追加供給装置において、前記供給管位置検出手段は、前記原料供給管の進退動用駆動源の駆動量を検出する駆動量検出部を備えたことを特徴とする単結晶引上げ装置の原料追加供給装置。4. The raw material additional supply device of the single crystal pulling apparatus according to claim 1, wherein the supply pipe position detection unit detects a driving amount of a forward / backward drive source of the raw material supply pipe. A raw material additional supply apparatus for a single crystal pulling apparatus, comprising a quantity detection unit. 請求項1乃至請求項4のいずれか1項に記載の単結晶引上げ装置の原料追加供給装置において、前記固化面上に向けた原料供給管による固形原料の供給は自動化されることを特徴とする単結晶引上げ装置の原料追加供給装置。5. The raw material additional supply device of the single crystal pulling apparatus according to claim 1, wherein the supply of the solid raw material through the raw material supply pipe toward the solidified surface is automated. Raw material additional supply equipment for single crystal pulling equipment.
JP08260798A 1998-03-13 1998-03-13 Raw material additional supply equipment for single crystal pulling equipment Expired - Fee Related JP3606037B2 (en)

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JP4607276B2 (en) * 2000-02-29 2011-01-05 Sumco Techxiv株式会社 CZ method single crystal pulling equipment
JP3888225B2 (en) 2002-05-14 2007-02-28 トヨタ自動車株式会社 Vehicle control device
JP5262257B2 (en) * 2008-04-10 2013-08-14 株式会社Sumco Method for producing nitrogen-doped silicon single crystal
JP5410086B2 (en) * 2008-12-19 2014-02-05 Sumco Techxiv株式会社 Silicon single crystal pulling device
KR101243579B1 (en) * 2010-07-02 2013-03-20 조원석 Upper-docking type raw material supply apparatus for continuous growing single crystals
JP2012189243A (en) * 2011-03-09 2012-10-04 Sinfonia Technology Co Ltd Treatment object feeding device
JP2012189244A (en) * 2011-03-09 2012-10-04 Sinfonia Technology Co Ltd Pipe unit for raw material loading apparatus, and pipe used for the pipe unit
CN103757691B (en) * 2014-01-10 2016-04-20 英利集团有限公司 Polycrystalline silicon material throws method again
CN104264229B (en) * 2014-10-09 2016-08-24 河北晶龙阳光设备有限公司 A kind of online doper of single crystal growing furnace
JP6390579B2 (en) 2015-10-19 2018-09-19 信越半導体株式会社 Single crystal manufacturing method
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