JP3525120B2 - Frequency adjustment method of piezoelectric element - Google Patents
Frequency adjustment method of piezoelectric elementInfo
- Publication number
- JP3525120B2 JP3525120B2 JP2001134447A JP2001134447A JP3525120B2 JP 3525120 B2 JP3525120 B2 JP 3525120B2 JP 2001134447 A JP2001134447 A JP 2001134447A JP 2001134447 A JP2001134447 A JP 2001134447A JP 3525120 B2 JP3525120 B2 JP 3525120B2
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- Prior art keywords
- frequency
- piezoelectric element
- adjustment
- frequency adjustment
- processing
- Prior art date
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Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は水晶振動子等の圧電素子
を、アルゴンイオンを衝突させることにより、圧電素子
の電極膜の一部を取り除いて周波数の合わせ込みを行な
う周波数調整方法に関する。
【０００２】
【従来の技術】従来の水晶振動子に代表される圧電素子
の周波数調整方法は質量を付加して所望の周波数を得る
蒸着周波数調整方法が一般的であったが、近年、新たな
方法として質量を軽減して所望の周波数を得るスパッタ
エッチングあるいはイオンビーム周波数調整方法が開発
されてきている。
【０００３】以下、後者の周波数調整技術について説明
する。所定の切り出し角度と形状に切断研磨され仕上げ
られた圧電素子はベース電極を形成するため、圧電素子
の表裏に電極形状を模したマスクを密着させ、通常、真
空中で銀等の金属膜を蒸着させる。この時、周波数は膜
厚モニタで管理され共振周波数は所望値に対して５００
〜２０００ｐｐｍ低く設定される。
【０００４】次に、この圧電素子を保持器に機械的な結
合と電気的な導通をさせるために、半田や導電性接着剤
等を用いてマウントする。
【０００５】そして、周波数調整加工装置による周波数
調整方法においては、周波数調整加工を行う前に圧電素
子の共振周波数を測定して合わせ込み周波数との周波数
差を求め、周波数調整加工の加工レートからスパッタエ
ッチングまたはイオンビームを照射する時間を割り出
し、周波数調整加工を行うときは測定系を電気的に切り
離してから周波数調整加工を行ない、これらの作業を数
回繰り返えすことで上記周波数差が零になるよう合わせ
込みを行なう。
【０００６】なお、加工レートは一般的にベース電極の
面積が大きい程遅くなり、また、圧電素子に印可される
加工エネルギーが大きい程速くなるため、周波数と加工
条件毎に適正値を予め求めておく。
【０００７】
【発明が解決しようとする課題】周波数調整加工の加工
レートが同じ周波数帯であっても各々の圧電素子で違っ
てしまうこと、またはスパッタガンやイオンビームガン
の周波数調整源に起因し加工レートが不安定でばらつき
をもつことから、予め求めた加工レートと実際の加工レ
ートが異なり、周波数調整後の共振周波数が合わせ込み
周波数からずれてしまっていた。
【０００８】また、周波数調整加工の加工レートは、周
波数調整源の印加電流を可変することにより制御してい
たが、周波数調整源を定常状態で維持させるためにはあ
る一定以上の電力を供給する必要があり、微小な加工レ
ートを確保するのは困難であった。
【０００９】更に、前述の如く各々の圧電素子で周波数
調整前の周波数が大きくばらついているため、加工レー
トが固定であると、合わせ込み周波数との差が大きい圧
電素子は加工時間が長くなり、機械能力を低下させる原
因となっていた。
【００１０】一方、従来の方法では、スパッタエッチン
グまたはイオンビームを照射するとプラスに帯電したア
ルゴンイオンが圧電素子の電極膜にぶつかるため、電極
膜にはプラス電荷が帯電する。帯電したプラス電荷はア
ースに流れようとするが、周波数を測定する測定系が接
続されていると、測定系を通じて発振回路や伝送波測定
器（この測定器を以下ネットワークアナライザと称す）
に流れてしまう。発振回路やネットワークアナライザは
交流信号で動作するものであるため、直流電流が流れる
と機能を破壊する危険性があり周波数調整加工時には電
気的に測定系を切り離す必要があった。
【００１１】また、微小な加工レートが得られなかった
り、機械能力を低下させないように加工レートを大きく
してしまうと、周波数調整源をシャッターもしくは電源
で遮断したときに時間差が生じて、合わせ込み周波数に
対し調整量が多くなり過ぎ所望の周波数に合わせること
ができない。
【００１２】そこで、本発明の目的は、圧電素子の共振
周波数を測定しながら周波数調整加工を行い、周波数調
整源と圧電素子の距離を可変にすることにより最適な加
工レート（最短時間で目標とする周波数に精度良く調整
加工すること）を得るとともに精度のよい周波数調整加
工を効率よく行うことにある。
【００１３】
【課題を解決するための手段】本発明の圧電素子の周波
数調整方法は、圧電素子の表面に形成された電極膜に対
し周波数調整源により発生させたアルゴンイオンを衝突
させることにより前記電極膜の質量を減少させて前記圧
電素子の共振周波数を調整する方法において、前記圧電
素子の前記電極膜に帯電したプラス電荷を除去すると同
時に前記圧電素子の共振周波数を測定しながら、前記周
波数調整源の外部に配置された前記圧電素子と前記周波
数調整源との距離を変化させることにより、前記周波数
調整源への印加電流を変化させることなく前記質量を減
少させる加工レートを変化させ、前記圧電素子の共振周
波数を低い周波数から高い周波数に調整して目標とする
周波数を得ることを特徴とする。
【００１４】
【作用】測定系のインピーダンス整合回路（これを以下
フィクスチャと称す）は通常は抵抗のみからなるが、電
荷除去手段として圧電素子とアースとの間にコイルを接
続したインピーダンス整合回路を用いることにより、測
定系に流れ込む直流分を遮断でき交流分だけをバイパス
できる。その結果、測定系を破壊することがなく、圧電
素子の周波数を測定できる。
【００１５】また、周波数調整加工の加工レートは、周
波数調整源と圧電素子の距離が長くなるにつれて減少
し、ある距離を越えると零になるため、合わせ込み周波
数と圧電素子の周波数差が数百〜数千ｐｐｍあるような
場合は距離を短くして加工レートを速くし、周波数差が
数十ｐｐｍ以内のような場合は距離を長くすることで加
工レートを遅くし、周波数調整源の印加電流を可変する
ことなく自由に加工レートを制御できる。
【００１６】
【実施例】以下、本発明の実施例を図１、図２、図３及
び図４により説明する。
【００１７】（実施例１）
図１は、本発明の周波数調整方法に係る周波数調整加工
装置の模式図である。
【００１８】周波数調整手段すなわち周波数調整源９の
内部には、ステンレス製のφ１０ｍｍの電極棒６があ
り、直流電源１３が接続されている。周波数調整源９の
電極棒６は、外周部７の円筒状をしたφ１００ｍｍのス
テンレスで覆われている。電極棒６と外周部７は絶縁さ
れており、外周部７はアースシールドされている。周波
数調整源９及び圧電素子３は、真空容器１０の内部に納
められており、真空容器１０は、メカニカルブースタポ
ンプ１１を介して、ロータリーポンプ１２で真空排気さ
れる。
【００１９】真空容器１０を１０-3Ｔｏｒｒレベルに真
空排気したのち、周波数調整源９の内部にガスボンベ８
よりアルゴンガスを１０ー1〜１０ー2Ｔｏｒｒ程度の真空
度になるよう流入させ、電極棒６に直流電圧を印加する
ことにより、電極棒６とアースシールドされた外周部７
の間でアルゴンプラズマが発生する。発生したプラズマ
によりアルゴンガスはラジカル及びイオンとなり、イオ
ン化されたアルゴンガスは、電極棒６の先端方向に設け
られたφ３ｍｍの噴き出し口５から飛び出して、対向に
位置した水晶振動子等の圧電素子３の表面に衝突する。
アルゴンイオンが圧電素子３に衝突することで電極膜４
の銀を弾き飛ばすため、電極の質量は減少し、その結果
圧電素子３の周波数は低い周波数から高い周波数へ変化
する。
【００２０】アルゴンイオンが衝突することにより変化
する圧電素子３の周波数は、フィクスチャ２を介して、
周波数測定手段すなわちネットワークアナライザ１によ
って共振させることで測定できる。ネットワークアナラ
イザ１とフィクスチャ２の接続は、５０Ω系の同軸ケー
ブルを用いる。
【００２１】図３は、本発明のフィクスチャの回路図で
ある。
【００２２】抵抗１９、２０、２１はπ型に配置され、
コイル２２は抵抗２１と並列になるように接続されてい
る。コイル２２は圧電素子３とアースを短絡するように
接続されているため、圧電素子３にプラス電荷が帯電し
て信号線に直流分が流れてもコイル２２によりアースに
落ちる。よって、ネットワークアナライザ１には交流分
だけが流れ込み、圧電素子３の周波数を測定することが
できる。
【００２３】また、抵抗１９、２０を省略した簡易的な
回路でも同様の効果が得られる。
【００２４】測定した圧電素子３の周波数は、外部の演
算処理装置１５に送られ、合わせ込み周波数との測定差
から最適な加工レートを算出する。算出された加工レー
トを得るための圧電素子３と噴き出し口５の距離を割り
出して、周波数調整源９の駆動装置１４へ信号を送り、
周波数調整源９を前後に移動させる。
【００２５】圧電素子３と噴き出し口５の距離は５〜２
０ｍｍまで可変できる機構になっており、周波数調整加
工を開始する前は５ｍｍの距離に保たれている。加工が
始まると周波数調整源９は前記周波数差からプログラム
された周波数差と加工レートの設定値により周波数調整
加工しながら徐々に後方へ移動し加工レートを速い状態
から遅くさせて行き、圧電素子３の共振周波数が合わせ
込み周波数と一致したとき、プラズマの発生を遮断す
る。
【００２６】圧電素子３へのアルゴンイオンの照射及び
遮断には直流電源１３を直接開閉してもよいし、プラズ
マを連続発生させた状態でシャッタ１６をシャッタ駆動
機構１７で制御して開閉してもよい。
【００２７】図４は、一つの周波数調整源を設けた周波
数調整加工装置で周波数調整した圧電素子の周波数変化
の過程を示す図である。
【００２８】直流電源を投入すると、圧電素子の周波数
は合わせ込み周波数へ徐々に近づき、合わせ込み周波数
近傍になったところで周波数調整源９を圧電素子３から
遠ざけることで、最適な加工レートを得ることが可能と
なる。
【００２９】（実施例２）
また、さらに効率的な周波数調整を行う周波数調整制御
装置とするための説明を図２の模式図を用いて行なう。
本装置は、３箇所の周波数調整源９ａ〜９ｃを有し、左
から大まかな周波数調整を行なう粗調（Ｈ）、中間的な
調整を行なう粗微調（Ｍ）、最終の合わせ込みを行なう
微調（Ｌ）から構成され、調整用の圧電素子３は搬送機
構１８により粗調、粗微調、微調のステップで搬送され
周波数調整される。
【００３０】粗調は、ベース電極上がりの２０００ｐｐ
ｍ程度からのばらつきを所望の共振周波数の合わせ込み
値に対し２００ｐｐｍまでの合わせ込みを受け持ち圧電
素子３と周波数調整源９ａとの距離は５ｍｍ程度と他の
周波数調整源に比べ近い距離を設定し、これにより加工
レートは約８００ｐｐｍ／秒と速い加工レートが得られ
る。
【００３１】粗微調は、粗調上がりの圧電素子３を５０
ｐｐｍまでの合わせ込みを受け持ち圧電素子３と周波数
調整源９ｂとの距離は１０ｍｍ程度に設定し、加工レー
トは約１００ｐｐｍ／秒が得られる。
【００３２】微調は、粗微調上がりの圧電素子３を０ｐ
ｐｍまでの合わせ込みを受け持ち、圧電素子３と周波数
調整源９ｃとの距離は２０ｍｍ程度に設定し、加工レー
トは約２０ｐｐｍ／秒の遅い加工レートが得られる。
【００３３】周波数調整源９ａ〜９ｃは、個々に圧電素
子３の共振周波数をフィクスチャ２を介してネットワー
クアナライザ１で測定し、外部演算装置１５で合わせ込
み周波数との周波数差を管理し、最適加工レートとなる
よう駆動装置１４へ制御信号を送り圧電素子３と周波数
調整源９ａ〜９ｃまでの距離を可変させる。
【００３４】個々の周波数調整手段の動作については、
図１における説明と同じであるので省略する。
【００３５】なお、本発明は上記実施例に限定されるこ
となく、幾多の変更を加え得ることは勿論である。
【００３６】
【発明の効果】本発明によれば、圧電素子の電極膜に対
し、周波数調整源により発生させたアルゴンイオンを衝
突させることにより圧電素子の共振周波数を調整する方
法において、電極膜に帯電したプラス電荷を除去すると
同時に共振周波数を測定しながら共振周波数の調整を行
うので、調整時間を短縮できるとともに共振周波数の合
わせ込み精度を向上させることができる。さらに、周波
数調整源への印加電流を変化させることなく、加工レー
トを自由にコントロールできるため、所望の共振周波数
に対する合わせ込み精度を数ｐｐｍまでおさめることが
できる。
【００３７】
【００３８】Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric element, such as a quartz oscillator, which is bombarded with argon ions to remove a part of an electrode film of the piezoelectric element to reduce the frequency. The present invention relates to a frequency adjustment method for performing tuning. 2. Description of the Related Art A conventional method of adjusting the frequency of a piezoelectric element typified by a quartz oscillator is a method of adjusting a deposition frequency to obtain a desired frequency by adding a mass. As a method, a sputter etching or ion beam frequency adjusting method for obtaining a desired frequency by reducing the mass has been developed. [0003] The latter frequency adjustment technique will be described below. A piezoelectric element that has been cut and polished to a predetermined cutout angle and shape to form a base electrode, a mask imitating the shape of the electrode is brought into close contact with the front and back of the piezoelectric element, and usually a metal film such as silver is deposited in a vacuum. Let it. At this time, the frequency is controlled by a film thickness monitor, and the resonance frequency is set at 500 to a desired value.
２０００2000 ppm lower. Next, the piezoelectric element is mounted on the retainer using a solder, a conductive adhesive, or the like in order to provide mechanical connection and electrical conduction. [0005] The frequency by the frequency adjustment processing device
In the adjustment method, before performing the frequency adjustment processing, the resonance frequency of the piezoelectric element is measured to determine the frequency difference from the fitting frequency, and the time for sputter etching or ion beam irradiation is determined from the processing rate of the frequency adjustment processing, When performing the frequency adjustment processing, the measurement system is electrically disconnected, and then the frequency adjustment processing is performed. By repeating these operations several times, the adjustment is performed so that the frequency difference becomes zero. The processing rate generally decreases as the area of the base electrode increases, and increases as the processing energy applied to the piezoelectric element increases. Therefore, an appropriate value is determined in advance for each frequency and processing condition. deep. [0007] Even if the processing rate of the frequency adjustment processing is the same in the same frequency band, the processing may be different for each piezoelectric element, or may be caused by the frequency adjustment source of a sputter gun or an ion beam gun. Since the rate is unstable and fluctuates, the processing rate obtained in advance and the actual processing rate are different, and the resonance frequency after frequency adjustment has deviated from the matching frequency. Although the processing rate of the frequency adjustment processing has been controlled by varying the applied current of the frequency adjustment source, in order to maintain the frequency adjustment source in a steady state, a certain level of power or more is supplied. Therefore, it was difficult to secure a minute processing rate. Further, as described above, since the frequency before frequency adjustment varies greatly among the piezoelectric elements, if the processing rate is fixed, the processing time of a piezoelectric element having a large difference from the set frequency becomes longer, This was the cause of the decrease in mechanical capacity. On the other hand, in the conventional method, when sputter etching or ion beam irradiation is performed, positively charged argon ions collide with the electrode film of the piezoelectric element, so that the electrode film is positively charged. The charged positive charge tends to flow to the ground, but if a measurement system that measures the frequency is connected, an oscillation circuit or transmission wave measurement device (hereinafter, this measurement device is referred to as a network analyzer) through the measurement system
Will flow to. Oscillation circuits and network analyzers operate on an AC signal, so there is a risk of destroying their functions when a DC current flows, and it was necessary to electrically disconnect the measurement system during frequency adjustment processing. If a small processing rate cannot be obtained or if the processing rate is increased so as not to lower the mechanical ability, a time difference occurs when the frequency adjustment source is shut off by a shutter or a power supply, and the adjustment is performed. The amount of adjustment is too large for the frequency and cannot be adjusted to the desired frequency. Therefore, an object of the present invention is to perform frequency adjustment processing while measuring the resonance frequency of a piezoelectric element, and make the distance between the frequency adjustment source and the piezoelectric element variable so that the optimum processing rate (the target time can be set in the shortest time). To perform the frequency adjustment processing with high accuracy) and efficiently perform the frequency adjustment processing with high accuracy. According to the present invention, there is provided a method for adjusting a frequency of a piezoelectric element, comprising the steps of :
In a method of adjusting the resonance frequency of the piezoelectric element by reducing the mass of the electrode film by colliding argon ions generated by a frequency adjustment source , removing positive charges charged on the electrode film of the piezoelectric element. Then the same
Sometimes while measuring the resonant frequency of the piezoelectric element, the circumferential
The piezoelectric element arranged outside the wave number adjusting source and the frequency
By changing the distance from the number adjustment source, the frequency
It is characterized in that the processing rate for reducing the mass is changed without changing the current applied to the adjustment source, and the resonance frequency of the piezoelectric element is adjusted from a low frequency to a high frequency to obtain a target frequency. The impedance matching circuit of the measuring system (hereinafter referred to as a fixture) is usually composed of only a resistor. However, an impedance matching circuit in which a coil is connected between a piezoelectric element and ground as a charge removing means is used. By using this, the DC component flowing into the measurement system can be cut off, and only the AC component can be bypassed. As a result, the frequency of the piezoelectric element can be measured without destroying the measurement system. The processing rate of the frequency adjustment processing decreases as the distance between the frequency adjustment source and the piezoelectric element increases, and becomes zero when the distance exceeds a certain distance. If the frequency difference is within several tens of ppm, the processing rate is increased by shortening the distance.If the frequency difference is within several tens of ppm, the processing rate is reduced by increasing the distance. The machining rate can be freely controlled without changing the machining speed. Embodiments of the present invention will be described below with reference to FIGS. 1, 2, 3 and 4. FIG. (Embodiment 1) FIG. 1 is a schematic diagram of a frequency adjustment processing apparatus according to a frequency adjustment method of the present invention. Inside the frequency adjusting means, that is, the frequency adjusting source 9, there is a stainless steel φ10 mm electrode rod 6 to which a DC power supply 13 is connected. Frequency adjustment source 9
The electrode rod 6 is covered with a stainless steel having a diameter of 100 mm and a cylindrical shape on the outer peripheral portion 7 . The electrode rod 6 and the outer peripheral part 7 are insulated, and the outer peripheral part 7 is earth shielded. The frequency adjustment source 9 and the piezoelectric element 3 are housed inside a vacuum container 10, and the vacuum container 10 is evacuated by a rotary pump 12 via a mechanical booster pump 11. After evacuating the vacuum container 10 to a level of 10 −3 Torr, the gas cylinder 8 is placed inside the frequency adjusting source 9.
Further, an argon gas is introduced so as to have a degree of vacuum of about 10 -1 to 10 -2 Torr, and a DC voltage is applied to the electrode rod 6.
Between which an argon plasma is generated. The argon gas is converted into radicals and ions by the generated plasma, and the ionized argon gas is ejected from a φ3 mm ejection port 5 provided in the direction of the tip of the electrode rod 6, and the piezoelectric element 3 such as a quartz oscillator or the like positioned opposite thereto. Colliding with the surface.
When the argon ions collide with the piezoelectric element 3, the electrode film 4
Of the piezoelectric element 3, the frequency of the piezoelectric element 3 changes from a low frequency to a high frequency. The frequency of the piezoelectric element 3 that changes when the argon ions collide is changed via the fixture 2
It can be measured by resonating with frequency measuring means, that is, the network analyzer 1. The connection between the network analyzer 1 and the fixture 2 uses a 50Ω coaxial cable. FIG. 3 is a circuit diagram of a fixture according to the present invention. The resistors 19, 20, and 21 are arranged in a π type,
The coil 22 is connected in parallel with the resistor 21. Since the coil 22 is connected so as to short-circuit the piezoelectric element 3 and the ground, even if a positive charge is charged in the piezoelectric element 3 and a DC component flows through the signal line, the coil 22 drops to the ground. Therefore, only the alternating current flows into the network analyzer 1, and the frequency of the piezoelectric element 3 can be measured. Similar effects can be obtained with a simple circuit in which the resistors 19 and 20 are omitted. The measured frequency of the piezoelectric element 3 is sent to an external arithmetic processing unit 15 to calculate an optimum processing rate from a measured difference from the fitted frequency. The distance between the piezoelectric element 3 and the ejection port 5 for obtaining the calculated processing rate is determined, and a signal is sent to the driving device 14 of the frequency adjustment source 9.
The frequency adjustment source 9 is moved back and forth. The distance between the piezoelectric element 3 and the ejection port 5 is 5 to 2
The mechanism is variable up to 0 mm, and is maintained at a distance of 5 mm before starting the frequency adjustment processing. When the processing is started, the frequency adjustment source 9 gradually moves backward while performing the frequency adjustment processing based on the frequency difference programmed from the frequency difference and the set value of the processing rate, and gradually lowers the processing rate from the fast state. When the resonance frequency matches the matching frequency, the generation of plasma is cut off. The DC power supply 13 may be directly opened and closed to irradiate and shut off the argon ions to the piezoelectric element 3, or the shutter 16 may be opened and closed by controlling the shutter 16 with a shutter driving mechanism 17 while plasma is continuously generated. Is also good. [0027] FIG. 4 is a diagram showing the process of frequency change of the piezoelectric element in which the frequency adjustment by the frequency adjustment processing apparatus provided with one of the frequency adjustment source. When the DC power supply is turned on, the frequency of the piezoelectric element gradually approaches the matching frequency. When the frequency approaches the matching frequency, the frequency adjusting source 9 is moved away from the piezoelectric element 3 to obtain an optimum processing rate. Becomes possible. (Embodiment 2) A description will be given with reference to the schematic diagram of FIG. 2 for a frequency adjustment control device for performing more efficient frequency adjustment .
This apparatus has three frequency adjustment sources 9a to 9c, and coarse adjustment (H) for rough frequency adjustment, coarse fine adjustment (M) for intermediate adjustment, and fine adjustment for final adjustment from the left. (L), the piezoelectric element 3 for adjustment is transported by the transport mechanism 18 in steps of coarse adjustment, coarse fine adjustment, and fine adjustment, and the frequency is adjusted. The coarse adjustment is performed at 2000 pp rising from the base electrode.
The variation from about m is adjusted to 200 ppm with respect to the desired resonance frequency adjustment value, and the distance between the piezoelectric element 3 and the frequency adjustment source 9a is set to about 5 mm, which is shorter than other frequency adjustment sources. As a result, a high processing rate of about 800 ppm / sec can be obtained. In the coarse / fine adjustment, the piezoelectric element 3 with the coarse adjustment is set to 50
The distance between the piezoelectric element 3 and the frequency adjustment source 9b is set to about 10 mm, and the processing rate is about 100 ppm / sec. The fine adjustment is performed by setting the piezoelectric element 3 having the coarse / fine adjustment to 0p.
pm, the distance between the piezoelectric element 3 and the frequency adjustment source 9c is set to about 20 mm, and a processing rate as low as about 20 ppm / sec can be obtained. The frequency adjusting sources 9a to 9c individually measure the resonance frequency of the piezoelectric element 3 by the network analyzer 1 via the fixture 2, manage the frequency difference with the adjusted frequency by the external arithmetic unit 15, and optimize the frequency. A control signal is sent to the driving device 14 to change the distance between the piezoelectric element 3 and the frequency adjustment sources 9a to 9c so that the processing rate is obtained. Regarding the operation of each frequency adjusting means,
The description is the same as that in FIG. The present invention is, of course, not limited to the above-described embodiment, but may be modified in many ways. According to the present invention, versus the electrode film of the piezoelectric element
And a method of adjusting the resonance frequency of the piezoelectric element by the collision with argon ions generated by the frequency adjustment source, removing Then the charged positive charge to the electrode film
Since the resonance frequency is adjusted while measuring the resonance frequency at the same time , the adjustment time can be shortened and the accuracy of adjusting the resonance frequency can be improved. In addition, frequency
Since the processing rate can be freely controlled without changing the current applied to the number adjustment source , the matching accuracy with respect to a desired resonance frequency can be reduced to several ppm. [0038]
【図面の簡単な説明】 【図１】本発明の周波数調整制御装置の模式図。 【図２】本発明の他の周波数調整制御装置の模式図。 【図３】本発明のフィクスチャの回路図。 【図４】圧電素子の周波数調整過程をグラフにした図。 【符号の説明】 １ ネットワークアナライザ ２ フィクスチャ ３ 圧電素子 ４ 電極膜 ５ 噴き出し口 ６ 電極棒 ７ 外周部 ８ ガスボンベ ９ 周波数調整源 １０ 真空容器 １１ メカニカルブースタポンプ １２ ロータリポンプ １３ 直流電源 １４ 駆動装置 １５ 外部演算装置 １６ シャッタ １７ シャッタ駆動機構 ２０ 圧電素子搬送機構 １９ 抵抗 ２０ 抵抗 ２１ 抵抗 ２２ コイル[Brief description of the drawings] FIG. 1 is a schematic diagram of a frequency adjustment control device of the present invention. FIG. 2 is a schematic diagram of another frequency adjustment control device of the present invention. FIG. 3 is a circuit diagram of a fixture according to the present invention. FIG. 4 is a graph showing a process of adjusting the frequency of the piezoelectric element. [Explanation of symbols] 1 Network analyzer 2 Fixture 3 Piezoelectric element 4 Electrode film 5 spout 6 electrode rod 7 Outer part 8 Gas cylinder 9 Frequency adjustment source 10 Vacuum container 11 Mechanical booster pump 12 Rotary pump 13 DC power supply 14 Drive 15 External computing device 16 shutter 17 Shutter drive mechanism 20 Piezoelectric element transport mechanism 19 Resistance 20 Resistance 21 Resistance 22 coils
フロントページの続き (56)参考文献 特開 平４−196708（ＪＰ，Ａ) 特開 平４−196610（ＪＰ，Ａ) 特開 平２−248042（ＪＰ，Ａ) 特開 平３−209906（ＪＰ，Ａ) 特開 平２−130915（ＪＰ，Ａ) 特開 昭61−295381（ＪＰ，Ａ) 特開 平５−48363（ＪＰ，Ａ) 特公 昭63−34643（ＪＰ，Ｂ２) ЗЛЕКТРОННАЯ ТЕХНИ КА、СЕР．РАДИОДЕТАЛИ И РАДИОКОМПОНЕНТ Ы、２［47］（1982）（露）Ｐ．51− 55、Continuation of front page (56) References JP-A-4-196708 (JP, A) JP-A-4-196610 (JP, A) JP-A-2-24842 (JP, A) JP-A-3-209906 (JP, A) JP-A-2-130915 (JP, A) JP-A-61-295381 (JP, A) JP-A-5-48363 (JP, A) JP-B-63-34643 (JP, B2) ЗЛЕКТРОННАЯ ТЕХНИ КА, СЕР. РАДИОДЕТАЛИ И РАДИОКОМПОНЕНТ Ы, 2 [47] (1982) (Russia) 51− 55,
Claims (1)
し周波数調整源により発生させたアルゴンイオンを衝突
させることにより前記電極膜の質量を減少させて前記圧
電素子の共振周波数を調整する方法において、 前記圧電素子の前記電極膜に帯電したプラス電荷を除去
すると同時に前記圧電素子の共振周波数を測定しなが
ら、前記周波数調整源の外部に配置された前記圧電素子
と前記周波数調整源との距離を変化させることにより、
前記周波数調整源への印加電流を変化させることなく前
記質量を減少させる加工レートを変化させ、前記圧電素
子の共振周波数を低い周波数から高い周波数に調整して
目標とする周波数を得ることを特徴とする圧電素子の周
波数調整方法。(57) Claims: 1. A pair of the electrode film formed on the surface of the piezoelectric element
A method for adjusting the resonance frequency of the piezoelectric element by reducing the mass of the electrode film by colliding argon ions generated by a frequency adjustment source , wherein a positive charge charged on the electrode film of the piezoelectric element is removed.
While simultaneously measuring the resonance frequency of the piezoelectric element, the piezoelectric element disposed outside the frequency adjustment source.
And by changing the distance between the frequency adjustment source and
The processing frequency for reducing the mass is changed without changing the applied current to the frequency adjustment source, and the target frequency is adjusted by adjusting the resonance frequency of the piezoelectric element from a low frequency to a high frequency. A method for adjusting the frequency of a piezoelectric element, the method comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001134447A JP3525120B2 (en) | 1993-05-27 | 2001-05-01 | Frequency adjustment method of piezoelectric element |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12631193 | 1993-05-27 | ||
| JP5-126311 | 1993-05-27 | ||
| JP2001134447A JP3525120B2 (en) | 1993-05-27 | 2001-05-01 | Frequency adjustment method of piezoelectric element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31972597A Division JP3500286B2 (en) | 1993-05-27 | 1997-11-20 | Frequency adjustment method of piezoelectric element |
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|---|---|
| JP2001332948A JP2001332948A (en) | 2001-11-30 |
| JP3525120B2 true JP3525120B2 (en) | 2004-05-10 |
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| JP2001134447A Expired - Lifetime JP3525120B2 (en) | 1993-05-27 | 2001-05-01 | Frequency adjustment method of piezoelectric element |
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Citations (1)
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| JP6334643B2 (en) | 2011-09-09 | 2018-05-30 | マイクロソフト テクノロジー ライセンシング，エルエルシー | SMB2 scale out |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4232239A (en) * | 1979-03-16 | 1980-11-04 | Motorola, Inc. | Frequency adjustment of piezoelectric resonator utilizing low energy oxygen glow device for anodizing electrodes |
| US4626312A (en) * | 1985-06-24 | 1986-12-02 | The Perkin-Elmer Corporation | Plasma etching system for minimizing stray electrical discharges |
| JPH02130915A (en) * | 1988-11-11 | 1990-05-18 | Anelva Corp | Plasma processing equipment |
| JP2737993B2 (en) * | 1989-03-22 | 1998-04-08 | 日本電気株式会社 | Dry etching equipment |
| JPH03209906A (en) * | 1990-01-11 | 1991-09-12 | Yamanashi Denpa Kk | Vapor deposition controller for adjusting frequency of crystal resonator |
| JPH04196610A (en) * | 1990-11-26 | 1992-07-16 | Seiko Epson Corp | Frequency adjustment method for piezoelectric vibrator |
| JPH07118624B2 (en) * | 1990-11-28 | 1995-12-18 | キンセキ株式会社 | Piezoelectric element frequency adjusting device and frequency adjusting method |
| JPH0548363A (en) * | 1991-02-19 | 1993-02-26 | Showa Shinku:Kk | Continuous film forming device for crystal resonator |
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2001
- 2001-05-01 JP JP2001134447A patent/JP3525120B2/en not_active Expired - Lifetime
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| JP6334643B2 (en) | 2011-09-09 | 2018-05-30 | マイクロソフト テクノロジー ライセンシング，エルエルシー | SMB2 scale out |
Non-Patent Citations (1)
| Title |
|---|
| ЗЛЕКТРОННАЯ ТЕХНИКА、СЕР．РАДИОДЕТАЛИ И РАДИОКОМПОНЕНТЫ、２［４７］（１９８２）（露）Ｐ．５１−５５、 |
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