JP3369441B2 - Multi-directional X-ray fluoroscope - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a large number of X-rays on a detection surface.
The present invention relates to an X-ray solid-state flat panel detector in which a line detection element is arranged and which converts an intensity distribution of incident X-rays into an image signal, and a medical or industrial multidirectional X-ray fluoroscopic imaging apparatus, in particular, , A technique for removing high-quality images by removing the influence of scattered X-rays of other systems.

[0002]

2. Description of the Related Art For diagnosing or inspecting the internal structure of a three-dimensional solid, a multi-directional X-ray that irradiates a subject with X-rays from multiple directions and collects fluoroscopic images from different angles or takes X-rays.
Fluoroscopic imaging systems are known. In particular, the bidirectional device is called a biplane X-ray fluoroscopic imaging device, and is used for imaging the circulatory organs and head / abdominal blood vessels.

For example, a conventional biplane X-ray fluoroscopy apparatus has two X-ray sources and image intensifiers (hereinafter, referred to as "intensifiers") corresponding to the respective X-ray sources as shown in FIG. (Abbreviated as I.I.)-A TV camera system and a corresponding X-ray source and I.I. I. The line connecting to
It is arranged to intersect inside the region of interest.

I. I. As shown in the schematic cross-sectional view of FIG. 9, an input phosphor screen for converting an incident X-ray into a visible light image, a light intensity distribution of the visible light image into a photoelectron emission density distribution, and a cathode A photoelectric conversion film to which an electric potential is applied, an anode that gives an accelerating electric field that accelerates the electron beam emitted from the photoelectric conversion film, a focusing electrode that focuses the electron beam on the output fluorescent screen, and an accelerated electron beam is incident. And an output phosphor screen which is again converted into an optical image. Then, the optical image formed on the output phosphor screen is amplified to a brightness of several thousand times that of the optical image on the input phosphor screen. This brightness-amplified image is displayed on a monitor device through a television camera or recorded in an image recording device.

In such a multi-direction X-ray fluoroscopy apparatus, when a plurality of X-ray tubes simultaneously irradiate a subject with X-rays, the scattered X-rays have different I.V. I. Incident on
This causes a decrease in the S / N ratio of the X-ray image.

Therefore, the I.D. I. -In a multi-direction X-ray fluoroscopic imaging apparatus adopting a TV camera system, as one X-ray pulse irradiation with a timing shifted from each other, while one system is fluoroscopic or imaging, I.S. I. The noise caused by scattered rays (called the II blanking function) is prevented by setting the focusing voltage supplied to the switch to OFF or reverse bias.

On the other hand, an X-ray solid-state flat panel detector using a semiconductor is disclosed in US Pat. No. 4,689,487 (indirect conversion system).
And USP5319206 (direct conversion method).

The indirect conversion type X-ray solid-state flat panel detector is
A line intensity distribution is converted into a light intensity distribution by a phosphor such as potassium iodide (CsI) crystal, and this light is converted into, for example, FIG.
The charge is converted into electric charges for each pixel by a charge conversion unit such as a photodiode array indicated by reference numeral 140 of 0, stored in a signal storage capacitor (reference numeral 142 in the figure) provided corresponding to the pixel, and then read by the reading unit. .

In the X-ray solid-state flat panel detector of the direct conversion type, for example, as shown in FIGS. 11 and 12, when the X-rays are incident on the charge conversion means which is a semiconductor such as selenium (Se) under a high electric field. An electron-hole pair is generated, and this charge is stored in the signal storage capacitor provided for each pixel and read by the reading means.

The reading means in each of the conversion methods is almost the same, and is read as a digital signal by, for example, a thin film transistor (TFT / MOS transistor) matrix, a charge amplifier, a multiplexer A / D converter and the like.

[0011]

However, when a multi-direction X-ray fluoroscopic imaging apparatus is constructed using the conventional X-ray solid-state flat panel detector, the I.D. I. Since the blanking function like the system cannot be used, it is impossible to interleave the exposure and the reading, in which one system reads the accumulated signal while the other system is irradiating the X-rays. There was a problem that I could not shoot.

That is, when the exposure and the reading are interleaved, the scattered X-rays generated by the X-ray irradiation of one system are incident on the detectors of the other system being read, and the charges generated by the scattered X-rays are generated. There is a problem in that the S / N ratio of the image is reduced by being superimposed on the accumulated signal as a noise component.

In order to avoid this, there is a low-speed reading method in which X-ray irradiation in the other direction is performed after the signal reading is completed. However, the irradiation / reading cycle is delayed, and the image acquisition time varies depending on the direction. Occurs, which is not useful for diagnosing a fast-changing subject such as angiography, and therefore cannot be used.

[0014]

[0015]

[0016]

In order to solve the above-mentioned problems, according to the present invention as set forth in claim 1, a plurality of X-ray generating means and corresponding to each of these X-ray generating means are provided. A multi-direction X-ray fluoroscopic imaging apparatus comprising a plurality of X-ray solid-state flat panel detectors provided, wherein the X-ray solid-state flat panel detector corresponds to each pixel of a plurality of pixels arranged on a detection surface. A plurality of charge conversion means provided for converting incident electromagnetic waves into electric charges, and a plurality of signal storage capacitors provided corresponding to the respective charge conversion means for accumulating the charges converted by the charge conversion means; A signal reading means for reading out a charge signal corresponding to each pixel from the signal storage capacitor, and when any one of the plurality of X-ray generating means generates an X-ray, each of the remaining X-ray generating means is provided. The detection signal of the X-ray solid-state flat detector corresponding to And solutions with a multi-directional X-ray fluoroscopic imaging apparatus characterized by comprising interference prevention control circuit for controlling so as not affected by X-rays, a.

According to the present invention as defined in claim 2,
A multi-direction X-ray fluoroscopic imaging apparatus comprising a plurality of X-ray generation means and a plurality of X-ray solid-state plane detectors provided corresponding to each of the X-ray generation means, wherein the X-ray solid-state plane is provided. The detector is provided corresponding to each of a plurality of pixels arranged on the detection surface, a plurality of charge conversion means for converting an incident electromagnetic wave into an electric charge, and corresponding to each of the charge conversion means,
A plurality of signal accumulating capacitors for accumulating the charges converted by the charge converting device, a signal reading device for reading out a charge signal corresponding to each pixel from the signal accumulating capacitor, and a bias voltage supplied to the charge converting device. And a bias voltage control means for connecting and disconnecting arbitrarily.
The solution is a fluoroscopic imaging device.

According to the present invention of claim 3,
The bias voltage control means controls the bias voltage supplied to the charge conversion means included in an X-ray solid-state flat detector that does not correspond to a predetermined X-ray generation means to be in an OFF state during exposure. The multi-direction X-ray fluoroscopic imaging device described in 2 is taken as a solution.

[Operation] According to the present invention having the above structure, it is possible to provide the X-ray solid-state flat panel detector with a state in which the signal charge does not change even when scattered rays from other X-ray sources enter. ,
A blanking function is realized in a multi-direction X-ray fluoroscopic imaging apparatus using this detector so that high-speed reading can be performed by simultaneously performing X-ray exposure from a certain direction and signal charge reading of the detector in another direction. become.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1A shows a two-direction X-ray as an embodiment of a multidirectional X-ray fluoroscopic imaging apparatus according to the present invention.
It is an external view of a main part of the fluoroscopic imaging apparatus, and FIG. 6B is a circuit configuration diagram.

According to FIG. 1A, the two-direction X-ray fluoroscopic imaging apparatus 1 is provided with a floor-standing C arm 3, an overhead traveling Ω arm 5, and a bed device and a control device (not shown). Has been done.

At both ends of the C-arm 3, a first X-ray tube 7 as a first X-ray source and a first X-ray solid-state flat panel detector (hereinafter abbreviated as the first detector) 11 face each other. It is provided to do. The X-rays emitted from the first X-ray tube 7 toward the subject (not shown) are detected by the first detector 11.

Similarly, at both ends of the Ω arm 5, a second X-ray tube 9 as a second X-ray source, and a second X-ray solid-state flat panel detector (hereinafter abbreviated as the second detector) 13 are provided. And are provided so as to face each other. The X-rays emitted from the second X-ray tube 9 toward the subject are detected by the second detector 13.

FIG. 1B shows a schematic circuit configuration of the two-direction X-ray fluoroscopic imaging apparatus 1. From the viewpoint of the schematic circuit configuration, the two-direction X-ray fluoroscopic imaging apparatus 1 includes the first and second
The X-ray tubes 7 and 9, the tube drive unit 15, the first and second detectors 11 and 13, the detector adapters 17 and 19, and the control unit 21 are configured.

The tube driving unit 15 includes a power supply device for driving the X-ray tube, and according to an instruction from the control unit 21,
First and second X at the X-ray exposure timing, which will be described later, respectively.
Pulse X-rays are emitted toward the subject from the ray tubes 7 and 9.

The detector adapters 17 and 19 interface with the first and second detectors 11 and 13 and the control unit 21, respectively, mediate the control of these detectors, and detect X detected by the detectors. The line image is sent to the control unit 21.

The control unit 21 includes a two-direction X-ray fluoroscopic imaging apparatus 1
Is used to control the entire image and to process, display and store fluoroscopic or radiographic X-ray images, and has a large capacity magnetic storage device (hereinafter abbreviated as DISC) 23, a memory 25, a CPU 27,
A console 29 equipped with a CRT and a keyboard (hereinafter abbreviated as KB), a network interface (hereinafter abbreviated as N / W-I / F) 31, a C-arm controller 3
3, Ω arm control unit 35, image bus 37, and control bus 39.

The CPU 27 is a processor that controls the entire control unit 21 and performs image processing, and is a DISC 2
The function is realized by expanding the processing program stored in No. 3 on the memory 25 and executing it. DISC2
Reference numeral 3 is a large-capacity storage device capable of storing a processing program of the CPU 27 and storing a large number of image data.

In the memory 25, the processing program stored in the DISC 23 is expanded and executed on the processing program, and image data obtained through the detector adapters 17 and 19 or data read from the DISC and the like are stored in the memory 25. It is expanded and these data are processed by the CPU 27.

The console 29 is provided with a KB for inputting an instruction from the operator to the two-direction X-ray fluoroscopic imaging apparatus 1 and a notification from the two-direction X-ray fluoroscopic imaging apparatus 1 to the operator.
It is equipped with a CRT that can simultaneously display X-ray images in each direction.

The N / W-I / F 31 is an interface for connecting the two-direction X-ray fluoroscopic imaging apparatus 1 to a network such as a hospital LAN, and image diagnosis in an image workstation remote from the X-ray examination room. The image data can be transferred in order to register the image data in the image database.

The C-arm control unit 33 and the Ω-arm control unit 35 control the movable parts of the C-arm 3 and the Ω-arm 5, respectively, and prevent interference between the C-arm 3 and the Ω-arm 5 in advance. The image bus 37 and the control bus 39 are buses for transmitting image data and control information, respectively.

[First Embodiment of X-ray Solid Flat Detector] Next, a first embodiment of the X-ray solid flat detectors 9 and 11 used in the two-direction X-ray fluoroscopic imaging apparatus 1 of FIG. 1 will be described. To do.
FIG. 2 is a circuit configuration diagram showing a first embodiment of an X-ray solid-state flat panel detector according to the present invention. This X-ray solid-state flat panel detector is a direct conversion type X-ray solid-state flat panel detector, and, for example, 2000 × 2000 pixels each having a substantially square shape are arranged in a square shape.

Each pixel has an X-ray charge conversion film Se using selenium for converting incident X-rays into charges, and this X-ray charge conversion film Se.
A signal storage capacitor Cs for storing the charges converted by the line charge conversion film Se, a signal holding capacitor Ch, and a signal storage capacitor Cs.
And a TFTa which is a first TFT for performing a switching action for arbitrarily connecting and disconnecting the signal holding capacitance Ch and a second for performing a switching action for reading a signal from the signal holding capacitance Ch.
TFTb which is the TFT of the above.

The X-ray charge conversion film Se is not isolated for each pixel, but may be integrally provided on the entire surface of the X-ray solid-state detector as shown in FIG. A surface electrode common to each pixel is provided on the upper surface of the X-ray charge conversion film Se, and this surface electrode is connected to the positive electrode of the high voltage power supply.
The negative electrode of the high voltage power supply is connected (grounded) to a common potential.
The electrode on the lower surface of the X-ray charge conversion film Se has a signal storage capacitance Cs.
One electrode of the signal storage capacitor Cs is grounded.

One electrode of the signal storage capacitor Cs is T
It is connected to the drain of FTa and the source of TFTa is connected to one electrode of the signal holding capacitor Ch. The other electrode of the signal holding capacitor Ch is grounded. TFTa
At the connection point between the source of the
The drain of FTb is connected, and the source of TFTb is connected to the output terminal via an amplifier and a multiplexer.

Of the above constituent elements for each pixel, TFTa
And the signal holding capacitance Ch is a component added by the present invention, and the other components are the same as those of the conventional X-ray solid-state flat panel detector. That is, if the TFTa and the signal holding capacitor Ch are deleted and the TFTb is directly connected to the connection point between Se and Cs, the pixel configuration becomes the same as the conventional pixel configuration.

The components outside the pixel include a read line for driving the TFTb for each pixel line in the horizontal direction.
A driver, a reset signal drive TFTc for each line that drives the TFTb of all pixels at the same time to discharge (reset) the accumulated charge, and a TFTd that amplifies the TFTa simultaneous drive signal in order to simultaneously conduct the TFTa of all pixels. ing.

Next, referring to the time chart of FIG.
The operation of the two-direction X-ray fluoroscopic imaging apparatus using the X-ray solid-state flat panel detector of the first embodiment will be described. As shown in FIGS. 3A and 3B, the two-direction X-ray fluoroscopic imaging apparatus
Exposure from the X-ray tube 7 (first exposure) and exposure from the second X-ray tube 9 (second exposure) are alternately performed, and the unidirectional exposure is performed. During the subsequent detector reading, the irradiation in the other direction is performed and so-called high-speed reading is performed.

Focusing on the operation of the first system in this device, the four operations from step S1 to step S4 are performed.
The operation of steps is repeated. First, during the first exposure, the first
Each pixel of the detector 11 has a charge C converted from the X-ray converted by Se.
It is stored in s (step S1).

Next, when the first exposure is completed, the TFTa of each pixel is made conductive for a short time to distribute the charge accumulated in Cs to Ch (step S2). After that, by returning the TFTa to the non-conductive state again, Cs and Ch are insulated from each other, and even if the charge due to the second exposure is accumulated in Cs, the amount of charge held in Ch waiting for reading does not change. It never happens.

Then, the TFTb is driven from the line driver for each line, and the charge held in the pixel Ch through the read amplifier and multiplexer is read by the charge amplifier and multiplexer (step S3). This reading is sequentially performed for all lines, and the second exposure is performed in parallel. At this time, even if the charge due to the second exposure is generated in Se and accumulated in Cs, since the TFTa is in the OFF state, the charge accumulated in Ch does not change, and the image due to the influence of scattered X-rays is not generated. It is possible to obtain a clear X-ray image in which the S / N ratio is prevented from decreasing.

Next, in order to reset the accumulated charge due to the scattered X-rays or the like of the second exposure to prepare for the next X-ray image detection by the first exposure, all the pixels are turned on simultaneously in TFTa and TFTb.
Then, the charge is discharged (step S4). By repeating the above-described four-step operation from step S1 to step S4, it is possible to perform high-speed fluoroscopy with a short time interval.

The second X-ray solid-state flat panel detector 13 (second detector) also repeats the same operation as the first detector at a timing delayed by a half cycle.

[Second Embodiment of X-ray Solid Flat Detector] Next, a second embodiment of the X-ray solid flat detectors 9 and 11 used in the two-direction X-ray fluoroscopic imaging apparatus 1 of FIG. 1 will be described. To do.
FIG. 4 is a circuit configuration diagram showing a second embodiment of the X-ray solid-state flat panel detector according to the present invention. This X-ray solid-state flat panel detector is an indirect conversion type X-ray solid-state flat panel detector. Of 2000
A visible light image pickup device in which x2000 pixels are arranged in a square is arranged.

Each pixel has a photodiode PD for converting incident light rays into electric charges, and a signal storage capacitor Cs for accumulating the electric charges converted by the photodiode PD.
And a first TFT that performs a switching action for arbitrarily connecting and disconnecting the photodiode PD and the signal storage capacitance Cs.
And a second TFTb that performs a switching function of reading a signal from the signal storage capacitor Cs.

Both the anode of PD and one electrode of Cs are connected to a bias power source, and the cathode of PD and Cs are connected together.
The other electrode is connected to the other electrode via TFTa which is the first TFT. The other electrode of Cs is connected to the drain of TFTb which is the second TFT,
, The source of the TFTb is connected to the output terminal via an amplifier and a multiplexer.

Of the above constituent elements for each pixel, TFTa
Are components added by the present invention, and other components are the same as those of the conventional indirect type X-ray solid-state flat panel detector. That is, the TFTa is removed, and the PD anode and C
If s is directly connected, it becomes the same as the conventional pixel configuration.

The components outside the pixel include a read line for driving the TFTb for each pixel line in the horizontal direction.
A driver and a TFTd that amplifies the TFTa simultaneous drive signal in order to conduct the TFTa simultaneously for all pixels are provided.

Next, referring to the time chart of FIG.
The operation of the two-direction X-ray fluoroscopic imaging apparatus using the X-ray solid-state flat panel detector of the second embodiment will be described.

This two-direction X-ray fluoroscopic imaging apparatus is shown in FIG.
As shown in (a) and (b), exposure from the first X-ray tube 7 (first exposure) and exposure from the second X-ray tube 9 (second exposure). Are alternately performed, and so-called high-speed reading is performed while the detector is being read in one direction while the detector is being exposed in the other direction.

Focusing on the operation of the first system in this apparatus, the three steps from step S1 to step S3 are performed.
The operation of steps is repeated.

First, during the first exposure, TFTa is turned on in each pixel of the first X-ray solid-state flat panel detector 11 (first detector).
In this state, the charges converted by PD are accumulated in Cs (step S1).

Next, when the first exposure is completed, TFTa
Is turned off (step S2). Next, the TFTb is driven from the line driver for each line, and the read amplifier,
The charge held in Cs of each pixel is read out via the multiplexer (step S3). This reading is sequentially performed for all lines, and the second exposure is performed in parallel. At this time, since the TFTa is in the OFF state, the second
Even if the electric charge generated by the exposure is generated in PD, it is blocked and Cs
Therefore, it is possible to obtain a clear X-ray image in which the S / N ratio of the image is prevented from lowering due to the influence of scattered X-rays.

By repeating the above-described three-step operation from step S1 to step S3, it is possible to perform high-speed fluoroscopy with a short time interval. The second detector 13 also repeats the same operation as the first detector 11 at a timing delayed by a half cycle, and similarly, due to the blocking action of the TFTa, the electric charge generated in the PD by the first exposure is accumulated in Cs. Can be prevented.

[Third Embodiment of X-ray Solid-Plane Detector] Next, a third embodiment of the X-ray solid-plane detectors 9 and 11 used in the two-direction X-ray fluoroscopic imaging apparatus 1 of FIG. 1 will be described. To do.
FIG. 6 is a circuit configuration diagram showing a third embodiment of the X-ray solid-state flat panel detector according to the present invention. This X-ray solid-state flat panel detector is a direct conversion type X-ray solid-state flat panel detector, and, for example, 2000 × 2000 pixels each having a substantially square shape are arranged in a square shape.

Each pixel has an X-ray charge conversion film Se using selenium for converting incident X-rays into charges, and this X-ray charge conversion film Se.
The line charge conversion film Se is configured to include a signal storage capacitor Cs that stores the charges converted by the line charge conversion film Se, and a TFTb that is a TFT that performs a switch action to read a signal from the signal storage capacitor Cs.

The X-ray charge conversion film Se is not isolated for each pixel, but may be integrally provided on the entire surface of the X-ray solid-state detector as shown in FIG. A surface electrode common to each pixel is provided on the upper surface of the X-ray charge conversion film Se, and this surface electrode is connected to the positive electrode of the high voltage power supply.
The negative electrode of the high voltage power supply is connected (grounded) to a common potential.
The electrode on the lower surface of the X-ray charge conversion film Se has a signal storage capacitance Cs.
One electrode of the signal storage capacitor Cs is grounded.

One electrode of the signal storage capacitor Cs is T
The drain of FTb is connected, and the source of TFTb is connected to the output terminal via an amplifier and a multiplexer. The above-mentioned components for each pixel are similar to those of the conventional X-ray solid-state flat panel detector.

The components outside the pixel include a read line for driving the TFTb for each pixel line in the horizontal direction.
A driver, a read amplifier to which pixels of each column are commonly connected, a multiplexer for switching the outputs of these read amplifiers, a bias power supply for applying a positive DC high voltage to Se, and a TFTe for turning on / off this bias power supply. It has and. Except for TFTe, the configuration is the same as that of the conventional X-ray flat panel detector.

Next, referring to the time chart of FIG.
The operation of the two-direction X-ray fluoroscopic imaging apparatus using the X-ray solid-state flat panel detector of the third embodiment will be described.

This two-direction X-ray fluoroscopic imaging apparatus is shown in FIG.
As shown in (a) and (b), exposure from the first X-ray tube 7 (first exposure) and exposure from the second X-ray tube 9 (second exposure). Are alternately performed, and so-called high-speed reading is performed while the detector is being read in one direction while the detector is being exposed in the other direction.

Focusing on the operation of the first system in this apparatus, the four operations from step S1 to step S4 are performed.
The operation of steps is repeated.

First, during the first exposure, the TFTe is turned on, a bias voltage is applied to the first X-ray solid-state flat panel detector 11 (first detector), and each pixel emits X-rays with Se. The converted charge is stored in Cs (step S1). Next, when the first exposure ends, the TFTe turns off,
No bias voltage is applied to the first X-ray solid-state flat panel detector 11 (step S2).

Next, the TFTb is driven from the line driver for each line, and the charge held in Ch of the pixel is read through the read amplifier and the multiplexer (step S).
3). This reading is sequentially performed for all lines, and the second exposure is performed in parallel. At this time, since the bias voltage is not applied to Se, charges due to the second exposure do not occur, so that the amount of charges accumulated in Cs does not change until the accumulated charges are read. . This makes it possible to obtain a clear X-ray image in which the S / N ratio of the image is prevented from lowering due to the influence of scattered X-rays.

By repeating the above-described three-step operation from step S1 to step S3, it is possible to perform high-speed fluoroscopy with a short time interval. The second detector 13 also repeats the same operation as the first detector 11 at a timing delayed by a half cycle.

In the above embodiments, the two-direction X-ray fluoroscopic imaging apparatus has been described as an example of the multi-directional X-ray fluoroscopic imaging apparatus. It is obvious that the collected pixel values of other systems can be read out while being protected from the influence of scattered rays and the like while the X-ray irradiation is being performed.

[0068]

As described above, according to the present invention, X
In a multi-directional X-ray fluoroscopic imaging device using a linear solid-state detector, while one system is exposing X-rays, the detectors of the other systems are not affected by the scattered radiation and S / Since signals can be read out without decreasing N, there is an effect that a high-speed multidirectional fluoroscopic or multidirectional radiographic image with a very small acquisition time difference of X-ray images from a plurality of directions can be obtained. In particular, this is a great advantage for high-speed X-ray video image diagnosis of the vascular system that requires three-dimensional position recognition.

[Brief description of drawings]

FIG. 1 is an external view (a) of a main part and a schematic circuit configuration diagram (b) showing an embodiment of a two-direction X-ray fluoroscopic imaging apparatus according to the present invention.
Is.

FIG. 2 is a circuit diagram showing a first embodiment of an X-ray solid-state flat panel detector according to the present invention.

FIG. 3 is a time chart for explaining the operation of the X-ray solid-state flat panel detector in the first embodiment.

FIG. 4 is a circuit diagram showing a second embodiment of an X-ray solid-state flat panel detector according to the present invention.

FIG. 5 is a time chart explaining the operation of the second embodiment of the X-ray solid-state flat panel detector.

FIG. 6 is a circuit diagram showing a third embodiment of an X-ray solid-state flat panel detector according to the present invention.

FIG. 7 is a time chart explaining the operation of the third embodiment of the X-ray solid-state flat panel detector.

FIG. 8 is an external view showing a configuration of a main part of a conventional two-direction X-ray fluoroscopic imaging apparatus.

9 is a cross-sectional view illustrating an image intensifier (II) used in a conventional multi-direction X-ray fluoroscopic imaging apparatus.

FIG. 10 is a circuit diagram showing a circuit configuration of a detector excluding a phosphor used in a conventional indirect solid-state X-ray flat panel detector.

FIG. 11 is a schematic cross-sectional view showing the configuration of a conventional direct type solid X-ray flat panel detector.

FIG. 12 is a schematic plan view showing the configuration of a conventional direct type solid X-ray flat panel detector.

[Explanation of symbols]

1 ... 2 direction X-ray fluoroscopic imaging apparatus, 3 ... C arm, 5 ... Ω arm, 7 ... 1st X-ray tube, 9 ... 2nd X-ray tube, 11 ... 1st X-ray solid-state detector, 13 ... 2X Line solid-state flat detector, 15 ... Tube drive unit, 17, 19 ... Detector adapter,
21 ... Control unit, 23 ... DISC, 25 ... Memory, 27 ...
CPU, 29 ... Console, 31 ... N / W-I / F, 3
3 ... C arm control unit, 35 ... Ω arm control unit, 37 ... Image bus, 39 ... Control bus, 51, 53 ... Hold signal.

Continuation of the front page (56) Reference JP-A-8-116044 (JP, A) JP-A-7-280945 (JP, A) JP-A-58-182574 (JP, A) JP-A-9-98970 (JP , A) JP 7-12947 (JP, A) JP 63-26592 (JP, A) JP 2-253186 (JP, A) JP 63-259486 (JP, A) JP 5-217530 (JP, A) Special Table 5-503770 (JP, A) (58) Fields surveyed (Int.Cl. ⁷ , DB name) G01T 1/00 A61B 6/00 300 G01T 1/24 H01L 31 / 0248

Claims (3)

(57) [Claims] 1. A multi-directional X-ray fluoroscopic imaging apparatus comprising a plurality of X-ray generating means and a plurality of X-ray solid-state flat panel detectors provided corresponding to the respective X-ray generating means, The X-ray solid-state flat panel detector is provided corresponding to each pixel of a plurality of pixels arranged on the detection surface, and corresponds to a plurality of charge conversion means for converting an incident electromagnetic wave into an electric charge and each charge conversion means. A plurality of signal accumulating capacitors for accumulating the charges converted by the charge converting means, and a signal reading means for reading out a charge signal corresponding to each pixel from the signal accumulating capacitors. Any one of X-ray generation means
An interference prevention control circuit for controlling the detection signals of the X-ray solid-state flat detectors corresponding to the remaining X-ray generation means so as not to be affected by the X-rays when one generates the X-rays.
A multi-directional X-ray fluoroscopic imaging apparatus comprising: 2. A multidirectional X-ray fluoroscopic imaging apparatus comprising a plurality of X-ray generating means and a plurality of X-ray solid-state flat panel detectors provided corresponding to the respective X-ray generating means, The X-ray solid-state flat panel detector is provided corresponding to each of the plurality of pixels arranged on the detection surface, and corresponds to each of the plurality of charge conversion means for converting an incident electromagnetic wave into an electric charge and each of the charge conversion means. A plurality of signal storage capacitors that are provided to store the charges converted by the charge conversion unit, a signal reading unit that reads out a charge signal corresponding to each pixel from the signal storage capacitors, and the signal conversion unit are supplied to the charge conversion unit. A multi-direction X-ray fluoroscopic imaging apparatus, comprising: 3. The bias voltage control means comprises a predetermined X
3. The multi-direction X-ray fluoroscopic imaging apparatus according to claim 2, wherein the bias voltage supplied to the charge conversion means included in the X-ray solid-state flat detector which does not correspond to the radiation generation means is controlled to be in an OFF state during exposure. .