JP3365608B2 - Nickel ion replenishment method and apparatus for plating - Google Patents
Nickel ion replenishment method and apparatus for platingInfo
- Publication number
- JP3365608B2 JP3365608B2 JP15235797A JP15235797A JP3365608B2 JP 3365608 B2 JP3365608 B2 JP 3365608B2 JP 15235797 A JP15235797 A JP 15235797A JP 15235797 A JP15235797 A JP 15235797A JP 3365608 B2 JP3365608 B2 JP 3365608B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- nickel
- plating solution
- anode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、効率良くニッケル
イオンをめっき処理部に補給することのできるめっきの
ニッケルイオン補給方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating nickel ion replenishing method and apparatus capable of efficiently replenishing nickel ions to a plated portion.
【0002】[0002]
【従来の技術】特開平8−246199号公報によれ
ば、めっき処理するめっき装置とめっき液槽の間の通路
にイオンの補給部を設け、補給部内に少なくとも一方が
めっき物質からなる可溶性の一対の電極を備え、補給部
の電極間でめっき液を流動させながら各電極に通電し
て、電極からめっき液中にめっき物質を溶出させて、め
っき処理部にめっき物質の補給を行う方法が提案されて
いる。2. Description of the Related Art According to Japanese Unexamined Patent Publication (Kokai) No. 8-246199, an ion replenishing section is provided in a passage between a plating apparatus for plating and a plating solution tank, and at least one of the replenishing sections is a soluble pair consisting of a plating substance. Proposal of a method to supply the plating substance to the plating treatment part by supplying electricity to each electrode while flowing the plating liquid between the electrodes of the replenishment part, eluting the plating substance from the electrode into the plating liquid Has been done.
【0003】[0003]
【発明が解決しようとする課題】従来では、イオンの補
給部において陽極側はイオンが溶出するが、陰極側にも
めっき液が接触しているため、陰極側にめっき液が析出
してしまう。また、陽極側ではイオンが補給されるが、
陰極上では同じ量だけイオンが消費されためっきが析出
してしまうため、めっき液中のイオン量は増加しない。
陽極から溶出したイオンが陰極にたどりつかなければ、
イオンを補給できると考えがちであるが、陰極近傍にも
イオンが存在し、それが陰極に引き寄せられて析出して
しまうため、ただ単に電解液を流すだけではめっき処理
部にイオンを補給できない。イオンを補給するためには
陰極での析出を抑えることが必要であるが、従来では補
給部で単にイオンを溶出し、めっき液をめっき処理部に
流してめっきを行っているにすぎず、効率が悪かった。
本発明は上記課題に鑑みてなされたもので、めっき処理
部にニッケルイオンを補給するのに効率良く行えるめっ
きのニッケルイオン補給方法及び装置を提供することを
目的とする。Conventionally, in the ion replenishment portion, ions are eluted on the anode side, but the plating solution is deposited on the cathode side because the plating solution is also in contact with the cathode side. Also, although ions are replenished on the anode side,
On the cathode, the plating in which the same amount of ions are consumed is deposited, so that the amount of ions in the plating solution does not increase.
If the ions eluted from the anode do not reach the cathode,
It is often thought that ions can be replenished, but since ions also exist in the vicinity of the cathode and are attracted to the cathode to be deposited, it is not possible to replenish ions to the plating treatment section simply by flowing the electrolytic solution. In order to replenish the ions, it is necessary to suppress the precipitation at the cathode, but in the past, ions were simply eluted in the replenishment section and the plating solution was flowed to the plating treatment section to perform plating. Was bad.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a nickel ion replenishing method and apparatus for plating that can be efficiently performed to replenish nickel ions to a plating treatment section.
【0004】上記目的は、被めっき物をめっき処理部で
めっきし、該めっき処理部にめっき液とともにニッケル
イオンを補給する装置であって、めっき処理部とは別に
ニッケルイオンを補給するためのめっき液槽を設け、上
記めっき液槽にめっき液槽内のpHの値を検出するpH
測定器と、該pH測定器の値によりニッケルイオン補給
量を制御する制御装置とを設けためっきのニッケルイオ
ン補給装置によって達成される。The above-mentioned purpose is to coat an object to be plated in the plating treatment section.
Plating, nickel plating with plating solution
A device that replenishes ions, separate from the plating process section
Provide a plating solution tank to replenish nickel ions, and
PH for detecting the pH value in the plating solution tank
Nickel ion replenishment depending on the measuring instrument and the value of the pH measuring instrument
Plating nickel io provided with a control device to control the amount
Thus it is achieved down supply device.
【0005】また、上記目的は、被めっき物をめっき処
理部でめっきし、該めっき処理部にめっき液とともにニ
ッケルイオンを補給する方法であって、めっき処理部と
は別にニッケルイオンを補給するためのめっき液槽を設
けためっきのニッケルイオン補給装置において、上記め
っき液槽にめっき液槽内のpHの値を検出するpH測定
器を設け、該pH測定器の値によりニッケルイオン補給
量を制御するめっきのニッケルイオン補給方法によって
達成される。Further, the above object is to subject the object to be plated to a plating treatment.
Plating on the processing part and the plating solution together with the plating solution on the plating part.
It is a method of replenishing nickel ions,
Separately, a plating bath for replenishing nickel ions is installed.
In the nickel-plated nickel ion replenishing device for digit plating,
PH measurement to detect the pH value in the plating bath in the plating bath
A pH meter is provided and nickel ion is replenished according to the value of the pH meter.
Thus it is achieved nickel ions replenishing plating method of controlling the amount.
【0006】[0006]
【発明の実施の形態】以下、本発明の実施の形態による
めっきのニッケルイオン補給方法及び装置について説明
する。本発明はニッケルめっき液中でニッケルを陽極と
して電解を行うことによりニッケルめっき液中にニッケ
ルイオンを溶出させることを特徴とするニッケルイオン
の補給方法であり、陰極電流密度(A/dm2 )÷電圧
(V)の値が10以下かつ陰極電流密度が20A/dm
2 以上の条件で、陰極上にめっきヤケを生じさせ、陰極
でのニッケルの析出を抑える方法を採っている。すなわ
ち、本発明は、ニッケルを陽極として高電流密度でめっ
きすることにより、通常、めっきヤケと呼ばれる現象を
陰極上で発生させ、陰極上へのニッケルの析出を抑えて
いる。BEST MODE FOR CARRYING OUT THE INVENTION A nickel ion replenishing method and apparatus for plating according to an embodiment of the present invention will be described below. The present invention is a nickel ion replenishment method characterized in that nickel ions are eluted in the nickel plating solution by performing electrolysis with nickel as an anode in the nickel plating solution. Cathode current density (A / dm 2 ) ÷ Voltage (V) value is 10 or less and cathode current density is 20 A / dm
Under the condition of 2 or more, the method of causing plating burn on the cathode and suppressing nickel deposition on the cathode is adopted. That is, according to the present invention, nickel is used as an anode for plating at a high current density, so that a phenomenon called plating burn is usually caused on the cathode to suppress nickel deposition on the cathode.
【0007】めっきヤケは一般に陰極近傍でニッケルイ
オン濃度が低下した場合、めっき液中の水が電気分解し
て水素が発生し、陰極界面近傍のpHが局部的に上昇
し、ニッケルイオンが酸化物や水酸化物となってヤケた
ような黒色の生成物を形成する現象である。めっきヤケ
を生じることにより、水素ガスが発生し、陰極上でのニ
ッケルの析出(いわゆるめっき)が抑えられるため、陽
極から溶出したニッケルにより、めっき液中にニッケル
イオン濃度が上昇する。[0007] In general, when the nickel ion concentration near the cathode decreases in the plating burn, water in the plating solution is electrolyzed to generate hydrogen, the pH near the cathode interface locally rises, and the nickel ion becomes an oxide. It is a phenomenon that it becomes a hydroxide or a hydroxide and forms a black product which is discolored. When the plating burns, hydrogen gas is generated and nickel deposition on the cathode (so-called plating) is suppressed, and nickel eluted from the anode increases the nickel ion concentration in the plating solution.
【0008】以下、図面を参照しながらめっき液中のニ
ッケルイオン濃度を上昇することができるニッケルイオ
ン補給装置について説明する。図1は本発明のめっき装
置Aの概略図である。図に示すように被めっき物である
エンジンのシリンダ10孔内に陽極11を配置し、その
間にめっき液を流しながら電解めっきを行う装置であ
る。A nickel ion replenishing device capable of increasing the nickel ion concentration in the plating solution will be described below with reference to the drawings. FIG. 1 is a schematic view of a plating apparatus A of the present invention. As shown in the figure, this is an apparatus in which an anode 11 is arranged in a cylinder 10 hole of an engine, which is an object to be plated, and electrolytic plating is performed while flowing a plating solution between them.
【0009】めっき装置のめっき処理部Aは、下部フレ
ーム1a上に上側絶縁板6と下側絶縁板8とで挟まれる
ようにして、陽極側の電極板7が配設され、上側絶縁板
6とシリンダ10の間には、陰極側の電極板9が配設さ
れている。さらに、シリンダ10の上部にはパッキング
12を介在して上部治具13が配置されている。これら
の部材の各々の中央には、シリンダ10孔の内径と同じ
径の孔が各々穿設してあり、これらの孔とその中心が全
て同一軸線上に並ぶように配置されている。フレーム1
の上部フレーム1b上には、エアシリンダ15が配設さ
れ、これを作動することにより、押圧ロッド15aが上
下方向に伸縮する。シリンダ10は、上部治具13が押
圧ロッド15aの押圧力で、下部フレーム1a上に押し
付けられて固定されている。In the plating processing section A of the plating apparatus, an electrode plate 7 on the anode side is arranged so as to be sandwiched between an upper insulating plate 6 and a lower insulating plate 8 on the lower frame 1a. An electrode plate 9 on the cathode side is arranged between the cylinder 10 and the cylinder 10. Further, an upper jig 13 is arranged above the cylinder 10 with a packing 12 interposed therebetween. At the center of each of these members, a hole having the same diameter as the inside diameter of the cylinder 10 is bored, and these holes and the centers thereof are all arranged on the same axis. Frame 1
An air cylinder 15 is provided on the upper frame 1b, and by operating the air cylinder 15, the pressing rod 15a expands and contracts in the vertical direction. In the cylinder 10, the upper jig 13 is pressed and fixed on the lower frame 1a by the pressing force of the pressing rod 15a.
【0010】電解液はめっき液槽2からポンプ4により
圧送され、下部フレーム1aに配設された液流入部5か
らめっき処理部に流入し、シリンダ10の内孔を通っ
て、上部治具13の側部に配設された液流出部14を経
てめっき液槽2へ排出される。シリンダ10内には、電
極板7の電極支持部7aに支持された陽極11が設けら
れ、これがめっき液の通路中央に位置するように支持固
定されている。直流電源3との接続は、シリンダ10側
が−、陽極11側が+になるように接続されている。こ
のように、シリンダの内面のみにめっき液を流してめっ
き処理する場合に、高い電流密度でめっきを行っても、
イオンの補給が素早くできるため、めっきヤケは生じな
いが、めっき液中のイオン消費が速いため、イオンの補
給装置が必要となる。The electrolytic solution is pressure-fed by the pump 4 from the plating solution tank 2, flows into the plating processing section from the solution inflow section 5 arranged in the lower frame 1a, passes through the inner hole of the cylinder 10, and then passes through the upper jig 13. It is discharged to the plating solution tank 2 through the solution outflow portion 14 arranged on the side of the. An anode 11 supported by an electrode supporting portion 7a of the electrode plate 7 is provided in the cylinder 10, and is supported and fixed so as to be located at the center of the passage of the plating solution. The connection with the DC power supply 3 is such that the cylinder 10 side is − and the anode 11 side is +. In this way, even when plating is performed at a high current density when the plating solution is flowed only on the inner surface of the cylinder,
Since the ions can be replenished quickly, plating burns will not occur, but the ion consumption in the plating solution is fast, so an ion replenishment device is required.
【0011】次に、本発明に係るめっき装置のニッケル
イオン補給装置Bについて説明する。図2は、図1のめ
っき液槽2の拡大図である。めっき液槽2内には、ニッ
ケル陽極16と陰極17を設け、これらの電極部は電源
18にリード線により接続されている。めっき液は、図
1に示すポンプ4より配管19を介して、シリンダ10
を配設しためっき処理部に供給され、シリンダ10孔を
めっき処理した後、めっき処理部から液流出部14に接
続された配管20を通ってめっき液槽2に戻される。陽
極16は、溶解を促進させるための表面積を大きくする
必要があり、ニッケルペレットをチタン等のバスケット
に入れて使用することが好ましい。そして、陰極17は
電流密度を大きくするため、陽極16に比べて表面積を
小さくしている。装置において、同じ電流量であれば陽
極から溶け出すニッケルの量は同じであるが、陰極の表
面積が小さければ、陰極電流密度が大きくなり、めっき
ヤケが生じやすくイオンの補給効率がアップするからで
ある。Next, the nickel ion replenishing device B of the plating apparatus according to the present invention will be described. FIG. 2 is an enlarged view of the plating bath 2 of FIG. A nickel anode 16 and a cathode 17 are provided in the plating solution tank 2, and these electrode portions are connected to a power source 18 by lead wires. The plating solution is supplied from the pump 4 shown in FIG.
Is supplied to the plating processing section in which the cylinder 10 holes are plated, and then returned from the plating processing section to the plating solution tank 2 through the pipe 20 connected to the solution outflow section 14. The anode 16 needs to have a large surface area for promoting dissolution, and it is preferable to use nickel pellets by putting them in a basket made of titanium or the like. The cathode 17 has a smaller surface area than the anode 16 in order to increase the current density. In the device, if the amount of current is the same, the amount of nickel that elutes from the anode is the same, but if the surface area of the cathode is small, the cathode current density will be large, and plating burns will occur easily, and the ion replenishment efficiency will increase. is there.
【0012】めっき液中のニッケルイオンが減少する
と、めっき液のpHが低下する。そのため、めっき液に
pHメータ21を浸漬し、pHメータ21の値とめっき
前のpH値(初期値)の差によりコントローラ22によ
って電源18からの通電量を制御し、ニッケルイオンの
補給量を調整する。これにより、ニッケルイオン濃度の
変化をリアルタイムで検出し、素早くニッケルイオンの
めっき処理部に補給することができる。ニッケルめっき
液としては、例えば、スルファミン酸ニッケル浴、硫酸
ニッケル浴、それらのセラミック等の粒子を分散した分
散めっき浴があげられる。めっき処理部の陽極11はニ
ッケルを使用した溶解性陽極でもチタン、白金、カーボ
ン等の不溶解性陽極でもかまわない。When the nickel ions in the plating solution decrease, the pH of the plating solution decreases. Therefore, the pH meter 21 is immersed in the plating solution, and the controller 22 controls the amount of electricity supplied from the power source 18 by the difference between the value of the pH meter 21 and the pH value before plating (initial value) to adjust the nickel ion supply amount. To do. As a result, the change in nickel ion concentration can be detected in real time, and the nickel ion plating portion can be quickly replenished. Examples of the nickel plating solution include a nickel sulfamate bath, a nickel sulfate bath, and a dispersion plating bath in which particles of ceramics thereof are dispersed. The anode 11 in the plating treatment part may be a soluble anode using nickel or an insoluble anode such as titanium, platinum or carbon.
【0013】図3は、めっき装置の変形例を示す。この
めっき装置は、めっき処理部Aが図1と同じであるが、
めっきのニッケルイオン補給装置Dが、めっき液槽2と
は別にめっきの補給槽23を設け、この補給槽23に電
極部16,17を配設していることが異なる。補給槽2
3で生成しためっき液は、ポンプ24によりめっき液槽
2へ圧送してニッケルイオンを補給するとともに、めっ
き液槽2のドレインバルブ25を介してめっき液を補給
槽23へ排出する。めっき液槽2の他に、補給槽23を
設けるメリットは、ニッケルイオンが減少した場合、補
給槽23で予めニッケルイオンを生成しためっき液を作
っておけば、それをめっき液槽2へ補給することで、め
っき処理部への素早い補給が可能になる点である。FIG. 3 shows a modification of the plating apparatus. In this plating apparatus, the plating processing section A is the same as that in FIG.
The nickel ion replenishing device D for plating is different in that a plating replenishing tank 23 is provided separately from the plating solution tank 2, and the electrode parts 16 and 17 are arranged in the replenishing tank 23. Supply tank 2
The plating solution generated in 3 is pumped to the plating solution tank 2 by the pump 24 to replenish the nickel ions, and the plating solution is discharged to the replenishment tank 23 via the drain valve 25 of the plating solution tank 2. The advantage of providing the replenishment tank 23 in addition to the plating solution tank 2 is to replenish it to the plating solution tank 2 if a nickel ion is produced in advance if a nickel ion-generated plating solution is prepared in advance. This enables quick replenishment to the plating process part.
【0014】図4に、めっきのニッケルイオン補給装置
の他の変形例を示す。このイオン補給装置Eは、めっき
液槽2のめっき液のニッケルイオン濃度がある程度まで
下がった状態で、一部あるいは全部のめっき液をバルブ
25を開けて中間槽26へ移し、電極部16,17を配
設した補給槽23で、予めニッケルイオンを生成し、め
っき液をポンプ24で圧送してめっき液槽2へ送り、次
いで、バルブ27を開けて中間槽26のめっき液を補給
槽23に供給する例である。図5に、めっきのニッケル
イオン補給装置Fの他の変形例を示す。これは、めっき
液槽2に対して、めっきの補給槽28,29を2つ配設
した場合の変形例であり、補給槽28,29で溶出した
ニッケルイオンを含んだめっき液を交互にめっき液槽2
に供給する方法である。めっき液槽2から排出されため
っき液は、三方弁30により補給槽28,29のいずれ
かの補給槽に導入され、ニッケルイオンを補給しためっ
き液をポンプ32または33により、三方弁31を介し
てめっき液槽2へ供給する補給装置である。この方法に
より、さらに安定したニッケルイオンをめっき処理部に
補給することができる。なお、補給槽は三つ以上設け、
それを切り替えられるようにしても問題ない。FIG. 4 shows another modification of the nickel-ion replenishing device for plating. This ion replenishing device E transfers a part or all of the plating solution to the intermediate tank 26 by opening the valve 25 while the nickel ion concentration of the plating solution in the plating solution tank 2 is lowered to a certain extent, and the electrode parts 16 and 17 are provided. In the replenishment tank 23 in which the nickel ion is generated in advance, the plating solution is pumped by the pump 24 to the plating solution tank 2, and then the valve 27 is opened to transfer the plating solution in the intermediate tank 26 to the replenishment tank 23. This is an example of supply. FIG. 5 shows another modification of the nickel-ion replenishing device F for plating. This is a modified example in which two plating replenishment tanks 28 and 29 are provided in the plating solution tank 2, and plating solutions containing nickel ions eluted in the replenishment tanks 28 and 29 are plated alternately. Liquid tank 2
It is a method of supplying to. The plating solution discharged from the plating solution tank 2 is introduced into one of the replenishment tanks 28 and 29 by the three-way valve 30, and the nickel ion-supplemented plating solution is pumped through the three-way valve 31 by the pump 32 or 33. Is a replenishing device that supplies the plating solution to the plating bath 2. By this method, more stable nickel ions can be supplied to the plating treatment part. In addition, three or more supply tanks are provided,
There is no problem even if it can be switched.
【0015】ニッケルイオン補給装置のめっき液槽また
は補給槽に使用されるニッケル陽極は、溶解性の良い、
硫黄や酸化ニッケルでデポラライズ(分極を防ぐ)され
たものを使うことが好ましい。その他のニッケル陽極は
活性度が低く、不動態化しやすく、ニッケルイオン補給
用の陽極としては不向きである。硫黄や酸化ニッケルを
含むニッケル陽極は、硫化ニッケルまたは酸化ニッケル
がニッケルの結晶粒内あるいは一部粒界に少量存在し、
ニッケルめっき液中で、NiとNi3 S2 またはNi、
NiOとの間に局部電池を生じ、陽極の不動態化を防
ぎ、陽極でのニッケルの溶解を促進する。効率良く迅速
にニッケルイオンの補給を行うためには、これらのニッ
ケルを使う必要がある。The nickel anode used in the plating solution tank or the replenishing tank of the nickel ion replenishing device has good solubility,
It is preferable to use one that is depolarized (prevents polarization) with sulfur or nickel oxide. Other nickel anodes have low activity and are easily passivated, and are not suitable as anodes for supplementing nickel ions. Nickel anodes containing sulfur or nickel oxide have a small amount of nickel sulfide or nickel oxide in the nickel crystal grains or in some grain boundaries,
Ni and Ni 3 S 2 or Ni in a nickel plating solution,
It creates a local cell with NiO, prevents passivation of the anode and promotes dissolution of nickel at the anode. In order to replenish nickel ions efficiently and quickly, it is necessary to use these nickels.
【0016】[0016]
【実施例】以下、本発明の実施例について説明する。電
解条件を次にようにして、図1に示すめっきのニッケル
イオン補給装置を用いてめっき処理を行った。
めっき液 : スルファミン酸ニッケル 535ml/l
ほう酸 45g/l
サッカリンソーダ 3.2g/l
次亜リン酸 1.5g/l
温度 : 57℃
pH : 4.2
めっき処理における通電条件とめっき処理の結果の陰極
のめっきヤケの有無を表1に示す。EXAMPLES Examples of the present invention will be described below. The electrolytic conditions were as follows, and the plating treatment was performed using the nickel ion replenishing device for plating shown in FIG. Plating solution: Nickel sulfamate 535 ml / l Boric acid 45 g / l Saccharin soda 3.2 g / l Hypophosphorous acid 1.5 g / l Temperature: 57 ° C. pH: 4.2 Cathode as a result of current-carrying conditions and plating treatment Table 1 shows the presence or absence of plating burns.
【0017】[0017]
【表1】 [Table 1]
【0018】表1より電流密度が20A/dm2 以上
で、かつ、電流密度÷電圧の値が10以下のときにめっ
きヤケが生じることが分かった。例えば、電流密度8
7.3Adm2 、10Vの条件では陰極でめっきヤケを
生じ、陰極でのニッケルの析出効率は30%で、めっき
液中のイオン濃度が上昇した。一方、めっきヤケを生じ
ない正常な条件では、陰極の析出効率は99%と高く、
液中のイオン濃度は上昇しなかった。From Table 1, it was found that plating burns occurred when the current density was 20 A / dm 2 or more and the value of current density / voltage was 10 or less. For example, current density 8
Under the conditions of 7.3 Adm 2 and 10 V, plating burns occurred at the cathode, the nickel deposition efficiency at the cathode was 30%, and the ion concentration in the plating solution increased. On the other hand, under normal conditions where plating burns do not occur, the deposition efficiency of the cathode is as high as 99%,
The ion concentration in the liquid did not rise.
【0019】以上、本発明の実施の形態について説明し
たが、勿論、本発明はこれに限定されることなく本発明
の技術的思想に基いて種々の変形が可能である。Although the embodiment of the present invention has been described above, it is needless to say that the present invention is not limited to this and various modifications can be made based on the technical idea of the present invention.
【0020】[0020]
【発明の効果】以上述べたように、本発明によれば、め
っき液槽内のめっき液中にニッケルを陽極として、陰極
電流密度が20A/dm2 以上で、かつ、陰極電流密度
÷電圧の値が10以下の条件で電解を行い、陰極にニッ
ケルイオンの酸化物を生成させてニッケルの析出を抑え
ている。よって、通常ではめっき不良といわれる条件で
ニッケルを溶解させることにより、陰極上にニッケルの
析出を抑えることができ、効率良くニッケルイオンをめ
っき処理部に補給できる。また、陰極の表面積を陽極の
表面積よりも小さくしたことにより、陰極にめっきヤケ
を生じさせることができ、また、小さな電流でもめっき
ヤケを生じ易くするため、省エネにつながる。As described above, according to the present invention, nickel is used as an anode in the plating solution in the plating solution, the cathode current density is 20 A / dm 2 or more, and the cathode current density / voltage Electrolysis is performed under the condition that the value is 10 or less and nickel oxide is generated at the cathode to suppress nickel deposition. Therefore, it is possible to suppress the precipitation of nickel on the cathode by dissolving nickel under conditions that are usually referred to as poor plating, and it is possible to efficiently supply nickel ions to the plating treatment part. Further, by making the surface area of the cathode smaller than the surface area of the anode, it is possible to cause plating burn on the cathode, and it is easy to cause plating burn even with a small current, which leads to energy saving.
【0021】めっき液槽の他に、さらに補給槽を設け、
該補給槽側に電極部を設けたので、補給槽にニッケルイ
オンを補給しておけば、めっき液槽側にニッケルイオン
濃度が低下した場合でも、迅速にニッケルイオンをめっ
き液槽に補給できる。めっき液槽内にpHの値を検出す
るpH測定器を設けたので、所望のめっき処理環境にす
るための素早い応答が可能になる。被めっき物をシリン
ダとした場合は、めっき液槽のめっき液をシリンダ孔の
一端開口に導入することにより、シリンダ孔にニッケル
イオンを安定して供給することができ、効率の良いめっ
き処理ができる。In addition to the plating solution tank, a replenishment tank is further provided,
Since the electrode portion is provided on the side of the replenishing tank, if the nickel ions are replenished to the replenishing tank, the nickel ions can be quickly replenished to the plating solution tank even when the nickel ion concentration is reduced on the plating solution tank side. Since the pH measuring device for detecting the pH value is provided in the plating solution tank, a quick response for achieving a desired plating treatment environment becomes possible. When the object to be plated is a cylinder, by introducing the plating solution in the plating solution tank into one end of the cylinder hole, nickel ions can be stably supplied to the cylinder hole, and efficient plating can be performed. .
【図1】本発明の実施の形態によるめっき処理部と、め
っきのニッケルイオン補給装置の概略図である。FIG. 1 is a schematic diagram of a plating treatment part and a nickel ion supply device for plating according to an embodiment of the present invention.
【図2】本発明の実施の形態によるめっきのニッケルイ
オン補給装置の概略図である。FIG. 2 is a schematic diagram of a nickel ion replenishing device for plating according to an embodiment of the present invention.
【図3】本発明の変形例によるめっき処理部と、めっき
のニッケルイオン補給装置の概略図である。FIG. 3 is a schematic view of a plating treatment part and a nickel ion supply device for plating according to a modification of the present invention.
【図4】本発明の変形例によるニッケルイオン補給装置
の概略図である。FIG. 4 is a schematic view of a nickel ion replenishing device according to a modification of the present invention.
【図5】本発明の他の変形例によるニッケルイオン補給
装置の概略図である。FIG. 5 is a schematic view of a nickel ion replenishing device according to another modification of the present invention.
2 めっき液槽 10 シリンダ 16 陽極 17 陰極 18 電源 21 pHメータ 23,28,29 補給槽 A,C めっき装置 B,D,E,F イオン補給装置 2 plating bath 10 cylinders 16 Anode 17 cathode 18 power 21 pH meter 23, 28, 29 Supply tank A, C plating equipment B, D, E, F Ion replenishing device
フロントページの続き (72)発明者 嶌崎 陽一 静岡県浜松市高塚町300番地 スズキ株 式会社内 (56)参考文献 特開 平4−13900(JP,A) 特開 平1−279799(JP,A) (58)調査した分野(Int.Cl.7,DB名) C25D 21/14 C25D 3/12 C25D 7/00 C25D 7/04 Continuation of the front page (72) Inventor, Yoichi Kamisaki, 300, Takatsuka-cho, Hamamatsu City, Shizuoka Prefecture Suzuki Stock Company (56) References A) (58) Fields investigated (Int.Cl. 7 , DB name) C25D 21/14 C25D 3/12 C25D 7/00 C25D 7/04
Claims (6)
該めっき処理部にめっき液とともにニッケルイオンを補
給する装置であって、めっき処理部とは別にニッケルイ
オンを補給するためのめっき液槽を設け、上記めっき液
槽にめっき液槽内のpHの値を検出するpH測定器と、
該pH測定器の値によりニッケルイオン補給量を制御す
る制御装置とを設けためっきのニッケルイオン補給装
置。 1. An object to be plated is plated in a plating treatment section,
Nickel ions are supplemented to the plating treatment part together with the plating solution.
It is a device that supplies nickel nickel separately from the plating part.
The plating solution tank for replenishing the ON is provided,
A pH measuring device for detecting the pH value in the plating solution tank,
The nickel ion supply amount is controlled by the value of the pH measuring device.
Nickel ion replenishment equipment for plating with a control device
Place
陽極と陰極とからなる電極部を設け、ニッケルイオンを
該陽極から溶出して生成するめっきのニッケルイオン補
給装置において、上記陰極の表面積を陽極の表面積より
も小さくするとともに、上記陽極がデポラライズしたも
のであることを特徴とする請求項1に記載のめっきのニ
ッケルイオン補給装置。 2. The plating solution tank in which the plating solution is stored,
By providing an electrode part consisting of an anode and a cathode, nickel ions
Nickel ion supplement for plating produced by elution from the anode
In the feeder, the surface area of the cathode is
And the anode is depolarized.
The plating plating according to claim 1, characterized in that
A shell ion replenishing device.
き液槽のめっき液をシリンダ孔の一端開口に導入し、め
っき処理後、めっき液を他端開口からめっき液槽に戻し
て、めっき液を循環しながらめっき処理部にニッケルイ
オンを補給し、シリンダ孔をめっき処理する請求項1ま
たは請求項2に記載のめっきのニッケルイオン補給装
置。 3. The object to be plated is a cylinder, and the plating is
Introduce the plating solution from the solution tank into one end of the cylinder hole and
After plating, return the plating solution from the opening on the other end to the plating solution tank.
The nickel plating solution in the plating process area while circulating the plating solution.
The method according to claim 1, wherein the ON is replenished and the cylinder hole is plated.
Or a nickel ion replenishing device for plating according to claim 2.
Place
該めっき処理部にめっき液とともにニッケルイオンを補
給する方法であって、めっき処理部とは別にニッケルイ
オンを補給するためのめっき液槽を設けためっきのニッ
ケルイオン補給装置において、上記めっき液槽にめっき
液槽内のpHの値を検出するpH測定器を設け、該pH
測定器の値によりニッケルイオン補給量を制御するめっ
きのニッケルイオン補給方法。 4. An object to be plated is plated in a plating treatment section,
Nickel ions are supplemented to the plating treatment part together with the plating solution.
It is a method of supplying nickel nickel separately from the plating treatment part.
A plating nick provided with a plating solution tank for supplying ON
Plating on the above plating bath in the Kell ion replenishing device
A pH measuring device for detecting the pH value in the liquid tank is provided.
It is necessary to control the amount of nickel ion replenishment by the value of the measuring instrument.
Mushroom nickel ion replenishment method.
陽極と陰極とからなる電極部を設け、ニッケルイオンを
該陽極から溶出して生成するめっきのニッケルイオン補
給装置において、上記陰極の表面積を陽極の表面積より
も小さくするとともに、上記陽極がデポラライズしたも
のを用い、上記pH測定器の値により上記電極部の通電
量を制御することを特徴とする請求項4に記載のめっき
のニッケルイオン補給方法。 5. The plating solution tank in which the plating solution is stored,
By providing an electrode part consisting of an anode and a cathode, nickel ions
Nickel ion supplement for plating produced by elution from the anode
In the feeder, the surface area of the cathode is
And the anode is depolarized.
Of the above-mentioned electrode, depending on the value of the pH measuring device.
The plating according to claim 4, wherein the amount is controlled.
Nickel ion replenishment method.
き液槽のめっき液を シリンダ孔の一端開口に導入し、め
っき処理後、めっき液を他端開口からめっき液槽に戻し
て、めっき液を循環しながらめっき処理部にニッケルイ
オンを補給し、シリンダ孔をめっき処理する請求項4ま
たは請求項5に記載のめっきのニッケルイオン補給方
法。 6. The object to be plated is a cylinder, and the plating is
Introduce the plating solution from the solution tank into one end of the cylinder hole and
After plating, return the plating solution from the opening on the other end to the plating solution tank.
The nickel plating solution in the plating process area while circulating the plating solution.
5. Replenishing ON and plating the cylinder hole.
Or a method for supplying nickel ions for plating according to claim 5
Law.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15235797A JP3365608B2 (en) | 1997-06-10 | 1997-06-10 | Nickel ion replenishment method and apparatus for plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15235797A JP3365608B2 (en) | 1997-06-10 | 1997-06-10 | Nickel ion replenishment method and apparatus for plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH111799A JPH111799A (en) | 1999-01-06 |
| JP3365608B2 true JP3365608B2 (en) | 2003-01-14 |
Family
ID=15538784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15235797A Expired - Fee Related JP3365608B2 (en) | 1997-06-10 | 1997-06-10 | Nickel ion replenishment method and apparatus for plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3365608B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4191210B2 (en) | 2006-07-04 | 2008-12-03 | Tdk株式会社 | Plating method and microdevice manufacturing method |
| US8980068B2 (en) * | 2010-08-18 | 2015-03-17 | Allen R. Hayes | Nickel pH adjustment method and apparatus |
-
1997
- 1997-06-10 JP JP15235797A patent/JP3365608B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH111799A (en) | 1999-01-06 |
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