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JP3361429B2 - Dustproof frame member for low reflection circuit transfer device excellent in light resistance and method of manufacturing the same - Google Patents

Dustproof frame member for low reflection circuit transfer device excellent in light resistance and method of manufacturing the same

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Publication number
JP3361429B2
JP3361429B2 JP06941596A JP6941596A JP3361429B2 JP 3361429 B2 JP3361429 B2 JP 3361429B2 JP 06941596 A JP06941596 A JP 06941596A JP 6941596 A JP6941596 A JP 6941596A JP 3361429 B2 JP3361429 B2 JP 3361429B2
Authority
JP
Japan
Prior art keywords
frame member
transfer device
circuit transfer
salt
reflection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP06941596A
Other languages
Japanese (ja)
Other versions
JPH09236908A (en
Inventor
義和 鈴木
守 松尾
正明 横丁
Original Assignee
スカイアルミニウム株式会社
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Filing date
Publication date
Application filed by スカイアルミニウム株式会社 filed Critical スカイアルミニウム株式会社
Priority to JP06941596A priority Critical patent/JP3361429B2/en
Publication of JPH09236908A publication Critical patent/JPH09236908A/en
Application granted granted Critical
Publication of JP3361429B2 publication Critical patent/JP3361429B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体集積回路部
品の製造において、フォトマスク等へのゴミ付着を防
ぎ、適正な回路転写が行われるようにする防塵具いわゆ
るペリクルの枠部材に関するものであり、特に紫外線や
さらに遠紫外域の波長を持つエキシマレーザーを光源と
した回路転写装置に用いても低反射で黒色の色調がほと
んど変化しない回路転写装置用防塵枠部材に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frame member for a so-called pellicle, which is a dustproof device for preventing dust from adhering to a photomask or the like and performing proper circuit transfer in the manufacture of semiconductor integrated circuit components. In particular, the present invention relates to a dust-proof frame member for a circuit transfer device, which has low reflection and hardly changes a black color tone even when used in a circuit transfer device using an excimer laser having a wavelength of ultraviolet rays or a far-ultraviolet region as a light source.

【0002】[0002]

【従来の技術】半導体集積回路転写時に使用される防塵
具いわゆるペリクルは、アルミニウム合金製の枠によっ
て透明な樹脂フィルムを保持する形態であり、回路の元
となるフォトマスク等へのゴミ付着を防いで高精度のリ
ソグラフィーを可能とするものである。通常、このアル
ミニウム合金製枠部材は、切削等の加工で高寸法精度の
枠形状に加工されたもので、その表面を硬化しキズなど
を防ぐこととあわせて光の反射を防ぐことを必要とする
ため黒色に染色アルマイトされる。
2. Description of the Related Art A dustproof device used for transferring a semiconductor integrated circuit, a so-called pellicle, is a form in which a transparent resin film is held by a frame made of an aluminum alloy to prevent dust from adhering to a photomask or the like which is a source of a circuit. It enables high precision lithography. Usually, this aluminum alloy frame member is processed into a frame shape with high dimensional accuracy by processing such as cutting, and it is necessary to harden the surface and prevent scratches as well as light reflection. Therefore, it is dyed black and anodized.

【0003】[0003]

【発明が解決しようとする課題】まず、この用途に用い
るアルミニウム合金は切削等の加工で高寸法精度の枠形
状に加工する必要があるので高強度を有する必要があ
る。また、従来技術で用いられている染色アルマイトは
有機染料をアルマイト皮膜中のポアーに浸透させること
により着色する。この染料がポアーの比較的に表面近く
にとどまることもあり、染色アルマイト品は紫外線の照
射を受けると有機染料が化学変化して色調変化や退色を
起こす問題がある。半導体回路転写では回路集積度の向
上を求めて、より短波長の光源を使用する傾向があり、
i線(波長365nm)等の紫外線だけでなく、遠紫外
線の一種であるエキシマレーザー(KrFエキシマレー
ザー:波長248nm、ArFエキシマレーザー:波長
193nm)も使用される動きがある。このように短波
長で高エネルギーの光を用いた場合、より一層、退色の
問題が起こりやすく、経時あるいは誤照射による防塵枠
の退色から予定外の反射が起こり回路の転写ミスにつな
がる危険が増す。そこで、紫外線、遠紫外線、エキシマ
レーザーに対して退色が少ない耐光性に優れた低反射黒
色の防塵枠が得られれば、半導体集積回路部品の製造安
定性および信頼性に寄与すること大である。
First, the aluminum alloy used for this purpose needs to have high strength because it needs to be machined into a frame shape with high dimensional accuracy by machining such as cutting. The dyed alumite used in the prior art is colored by permeating an organic dye into the pores in the alumite film. This dye may stay relatively close to the surface of the pore, and the dyed alumite product has a problem that when it is irradiated with ultraviolet rays, the organic dye chemically changes to cause color tone change and fading. In semiconductor circuit transfer, there is a tendency to use a light source with a shorter wavelength in order to improve the degree of circuit integration.
Not only ultraviolet rays such as i-line (wavelength 365 nm) but also excimer laser (KrF excimer laser: wavelength 248 nm, ArF excimer laser: wavelength 193 nm), which is a kind of far ultraviolet ray, is used. In this way, when high-energy light with a short wavelength is used, the problem of discoloration is more likely to occur, and unpredictable reflection occurs due to discoloration of the dust-proof frame due to aging or incorrect irradiation, increasing the risk of circuit transfer errors. . Therefore, if a low-reflection black dustproof frame that is excellent in light resistance with little discoloration against ultraviolet rays, far ultraviolet rays, and excimer lasers can be obtained, it will greatly contribute to the manufacturing stability and reliability of semiconductor integrated circuit components.

【0004】[0004]

【課題を解決するための手段】そこで、様々な検討を行
った結果、耐力350N/mm2のアルミニウム合金を
枠形状付与加工し、適正な状態で陽極酸化皮膜中のポア
ーにNi,Co,Cu,SnまたはFeを電解析出した
ことにより、紫外線やエキシマレーザーに対する耐光性
が良好な低反射黒色の防塵枠部材の製造が可能であるこ
とを見いだし、本発明に至った。
[Means for Solving the Problems] Therefore, as a result of various investigations, an aluminum alloy having a proof stress of 350 N / mm 2 was processed into a frame shape, and Ni, Co, Cu in the pores in the anodic oxide film were processed in an appropriate state. It was found that it is possible to produce a low-reflection black dustproof frame member having good light resistance to ultraviolet rays and excimer lasers by electrolytically depositing Sn, Fe, Sn or Fe, and the present invention has been completed.

【0005】すなわち、請求項1のZn3.5〜9.5
%,Mg1〜4.5%、Cu0〜3%を含み残部不純物
とAlとからなり、耐力が350N/mm2以上の、枠
状のAl合金部材で、表面に形成された膜厚4〜35μ
mの陽極酸化被膜のポアー中にNi,Co,Cu,S
n,Feの1種または2種以上が電解析出してL値<4
0の黒色となっていることを特徴とする耐光性に優れた
低反射回路転写装置用防塵枠部材。
That is, Zn 3.5 to 9.5 of claim 1
%, Mg 1 to 4.5%, Cu 0 to 3%, the balance impurities and Al, and a proof stress of 350 N / mm 2 or more, a frame-shaped Al alloy member, and a film thickness formed on the surface of 4 to 35 μm.
Ni, Co, Cu, S in the pores of the anodic oxide film of m
One or more of n and Fe are electrolytically deposited and L value <4
A dustproof frame member for a low reflection circuit transfer device having excellent light resistance, which is characterized by a black color of 0.

【0006】請求項2の、Al合金部材がさらに、Mn
0.05〜0.35%,Cr0.05〜0.35%,C
o0.05〜0.35%,Zr0.05〜0.35%,
Ni0.05〜0.35%、V0.05〜0.35%の
1種または2種以上を含む事を特徴とする請求項1記載
の低反射回路転写装置用防塵枠部材。
The Al alloy member according to claim 2 further comprises Mn.
0.05 to 0.35%, Cr 0.05 to 0.35%, C
o0.05-0.35%, Zr0.05-0.35%,
The dustproof frame member for a low reflection circuit transfer device according to claim 1, characterized in that it contains one or more of Ni 0.05 to 0.35% and V 0.05 to 0.35%.

【0007】請求項3の表面粗度がRaで0.3〜1.
2μmに調整されていることを特徴とする請求項1また
は請求項2記載の低反射回路転写装置用防塵枠部材。
The surface roughness Ra according to claim 3 is 0.3 to 1.
The dust-proof frame member for a low-reflection circuit transfer device according to claim 1 or 2, wherein the dust-proof frame member is adjusted to 2 µm.

【0008】請求項4の上記の化学組成を有する合金素
材を溶体化処理および人工時効処理により耐力を350
N/mm2以上とし、これに枠形状付与加工を行い、硫
酸浴中で表面に膜厚4〜35μmの陽極酸化被膜を形成
した後、Ni塩、Co塩、Cu塩、Sn塩,Fe塩の1
種または2種以上を添加した浴中で電解析出処理して着
色し黒色化することを特徴とする耐光性に優れた低反射
回路転写装置用防塵枠部材の製造方法。である。
The alloy material having the above chemical composition according to claim 4 is subjected to solution treatment and artificial aging treatment so that the yield strength is 350.
N / mm 2 or more, frame shape imparting processing is performed on this, and an anodized film having a film thickness of 4 to 35 μm is formed on the surface in a sulfuric acid bath, and then Ni salt, Co salt, Cu salt, Sn salt, Fe salt Of 1
A method for producing a dust-proof frame member for a low-reflection circuit transfer device, which is excellent in light resistance, characterized in that it is colored by electrolytic deposition in a bath containing one or more kinds thereof and is colored black. Is.

【0009】[0009]

【発明の実施の形態】以下に本発明を詳細に説明する。
本発明のアルミニウム合金は、3.5〜9.5%Zn,
1〜4.5%Mgを必須成分として含むが、これらの元
素は強度を向上させるために有効な成分であり、各々下
限より少ないと強度不足を生じる場合があり、上限より
多いと素材の鋳造・熱間加工性が低下し製造困難とな
る。さらに強度を向上させるためにCuを添加しても良
いが添加する場合の上限はZn,Mgと同様な理由で3
%である。積極的に添加する場合は0.5%以上が好ま
しいので、本明細書においては0.5%未満のCuは不
純物とみなす。また各々0.05〜0.35%のMn,
Cr,Co,Zr,NiおよびVの1種または2種以上
含有は、結晶粒粗大化を防止し、アルマイト後の表面色
調ムラを抑制する効果を持つので添加しても良い。各々
0.35%を超えると粗大晶出物に起因する圧延加工性
困難性が増加する。本明細書においては0.05%未満
のMn,Cr,Co,Zr,NiおよびVは不純物とみ
なす。また、通常アルミニウム合金においては、Tiを
単独で、またはBと一緒に添加して、鋳造組織の微細化
処理を施す。その場合のTi量上限は0.05%、B量
上限は0.01%とする。この他、0.5%までのF
e,Siや鋳塊から混入する微量元素を不可避的不純物
として含むことは差し支えない。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention is described in detail below.
The aluminum alloy of the present invention is 3.5 to 9.5% Zn,
1 to 4.5% Mg is contained as an essential component, but these elements are effective components for improving the strength. If the content of each element is less than the lower limit, the strength may be insufficient. -Hot workability deteriorates and manufacturing becomes difficult. Cu may be added to further improve the strength, but the upper limit of addition is 3 for the same reason as Zn and Mg.
%. When positively added, 0.5% or more is preferable, so Cu of less than 0.5% is regarded as an impurity in this specification. In addition, Mn of 0.05 to 0.35%,
The inclusion of one or more of Cr, Co, Zr, Ni and V has the effect of preventing crystal grain coarsening and suppressing unevenness in the surface color tone after alumite, and therefore may be added. If the content of each exceeds 0.35%, the rolling workability due to the coarse crystallized product increases. Mn, Cr, Co, Zr, Ni and V below 0.05% are considered as impurities in this specification. Further, usually in an aluminum alloy, Ti is singly added or added together with B to refine the cast structure. In this case, the upper limit of Ti content is 0.05% and the upper limit of B content is 0.01%. Besides this, F up to 0.5%
There is no problem in containing e, Si and trace elements mixed from the ingot as unavoidable impurities.

【0010】この合金は鋳造後、熱間で圧延あるいは押
出等の加工を施され、さらに必要に応じて冷間加工が施
される。この合金に主として切削等の機械加工により枠
形状付与加工を施すのであるが、本発明で用いるアルミ
ニウム合金は、枠形状付与加工前の耐力が350N/m
2以上である必要がある。これは、切削等の機械加工
による形状付与加工時の変形を起こさせず高寸法精度を
実現し、使用時の外力による変形や疵を防ぐために必要
となる条件である。そのため、合金に対して溶体化処理
・焼入れおよび人工時効処理を施す。ここで、溶体化処
理・焼入れの後あるいは人工時効後に歪み矯正を行って
もよい。この溶体化処理・焼入れおよび人工時効処理条
件は、上記耐力値を満たすよう適宜選択される。
After casting, this alloy is hot-rolled or extruded, and if necessary, cold-worked. This alloy is mainly subjected to frame shape imparting processing by machining such as cutting. The aluminum alloy used in the present invention has a proof stress before frame shape imparting processing of 350 N / m.
It must be at least m 2 . This is a condition necessary for achieving high dimensional accuracy without causing deformation during shape imparting processing by machining such as cutting, and for preventing deformation or flaw due to external force during use. Therefore, the alloy is subjected to solution treatment / quenching and artificial aging treatment. Here, strain correction may be performed after solution treatment / quenching or after artificial aging. The solution treatment / quenching and artificial aging treatment conditions are appropriately selected so as to satisfy the above-mentioned yield strength value.

【0011】枠形状付与加工を施した後、表面粗面化処
理を行う。これには、ブラスト加工等による機械的粗面
化処理と、酸性あるいはアルカリ性液にてエッチングし
粗面化する化学的な方法とがあり、これらを単独である
いは適宜組み合わせて用いる。この粗面化の程度は、最
終の防塵枠部材の表面粗度がRa0.3〜1.2μmと
なるように制御される。これは、低反射性のいわゆる艶
消しの黒色を得るために必要な条件である。最終の防塵
枠部材のRaが0.3μm未満だと反射が強い黒色にな
るため不適当であり、1.2μmをこえると灰色っぽく
なることと表面に汚れが付着しやすくなることとで好ま
しくない。
After the frame shape giving process, the surface roughening process is performed. There are mechanical roughening treatments such as blasting and chemical methods of roughening by etching with an acidic or alkaline liquid, and these are used alone or in appropriate combination. The degree of this roughening is controlled so that the surface roughness of the final dustproof frame member is Ra 0.3 to 1.2 μm. This is a necessary condition for obtaining a so-called matte black color with low reflectivity. If Ra of the final dustproof frame member is less than 0.3 μm, it is unsuitable because it becomes a black color with strong reflection, and if it exceeds 1.2 μm, it becomes grayish and stains easily adhere to the surface, which is not preferable. .

【0012】この後、硫酸浴による陽極酸化処理で部材
表面に4〜35μmの酸化皮膜を形成する。(一次電
解) 陽極酸化皮膜厚が4μm未満であると取扱時に表面疵等
が出来やすく、安定した黒い色調が得られず、これが3
5μmをこえると陽極酸化処理時間が長く不経済になる
上、皮膜が割れやすくなる等の点で問題が生じる。生産
性や品質の安定性を考慮した場合、陽極酸化皮膜厚のさ
らに望ましい範囲は6〜25μmである。
After that, an anodized film of 4 to 35 μm is formed on the surface of the member by anodizing treatment with a sulfuric acid bath. (Primary electrolysis) If the thickness of the anodic oxide film is less than 4 μm, surface defects are likely to occur during handling, and a stable black color tone cannot be obtained.
If it exceeds 5 μm, there arise problems in that the anodizing treatment time is long and it is uneconomical, and the film is easily cracked. Considering the productivity and the stability of quality, the more preferable range of the thickness of the anodized film is 6 to 25 μm.

【0013】そして、さらに、これに二次電解析出処理
を施し、部材表面を黒色に着色する。電解析出浴は、N
i塩、Co塩、Cu塩、Sn塩、Fe塩の1種又は2種
以上を添加したもので適宜選択できるが、代表的には硫
酸ニッケルとホウ酸を含む浴が挙げられる。その結果、
陽極酸化皮膜のポアーには電解析出によりNi,Co,
Cu,Sn,Feの1種又は2種以上が存在するが、こ
れらは本品を黒色に着色するために必須のものである。
これらの金属はコロイド粒子あるいは酸化物として存在
していてもかまわない。従来の有機染料を用いた所謂染
色アルマイトのものと違い本発明の電解析出によって着
色された皮膜は、紫外線やエキシマレーザーの照射に対
し、退色がほとんど無い。これは、着色に寄与する成分
が本質的に紫外線やエキシマレーザーを受けても変化し
にくい性質を持つ上、その析出は陽極酸化皮膜ポアーの
奥まで浸透するため強い照射を直接に受けにくいためで
ある。
Then, this is further subjected to a secondary electrolytic deposition treatment to color the surface of the member black. The electrolytic deposition bath is N
The i salt, the Co salt, the Cu salt, the Sn salt, and the Fe salt can be appropriately selected by adding one kind or two or more kinds, but typically, a bath containing nickel sulfate and boric acid can be mentioned. as a result,
Ni, Co, and
One or more of Cu, Sn and Fe exist, but these are essential for coloring this product black.
These metals may be present as colloidal particles or oxides. Unlike the conventional so-called dyed alumite using an organic dye, the film colored by electrolytic deposition of the present invention has almost no fading upon irradiation with ultraviolet rays or excimer laser. This is because the components that contribute to coloring have the property that they do not change substantially even when they are exposed to ultraviolet rays or excimer lasers, and their precipitation penetrates deep into the pores of the anodic oxide film, making it difficult to directly receive strong irradiation. is there.

【0014】また、本発明は防塵枠部材として不必要な
反射を防ぐ必要からL値<40の黒色にされたものであ
り、本発明でいう黒色には濃灰色も含まれる。また、低
反射という点から、光沢度(60゜)<10が望まし
い。
Further, in the present invention, the dustproof frame member has a black color with an L value of <40 in order to prevent unnecessary reflection, and the black color in the present invention includes dark gray. From the viewpoint of low reflection, glossiness (60 °) <10 is desirable.

【0015】電解析出処理後には通常の方法により適宜
封孔処理を行う。また、必要により製造の各段階で適
宜、洗浄・付着物除去を行う。
After the electrolytic deposition treatment, a sealing treatment is appropriately performed by a usual method. In addition, if necessary, cleaning and removal of adhering substances are appropriately performed at each stage of manufacturing.

【0016】[0016]

【実施例】以下、実施例により本発明を具体的に説明す
る。
EXAMPLES The present invention will be specifically described below with reference to examples.

【0017】表1に示す化学組成の鋳塊(直径約200
mm)から作製した平板状押出材(合金ABC用−幅1
15mm×厚さ7mm、合金DEF用−幅115mm×
厚さ8mm)に、460℃×1時間の溶体化処理・水焼
入れおよび120℃×25時間の人工時効処理を施し
た。これにより表2のように素材の耐力は350N/m
2以上となった。これを、主にNC加工機により切削
加工し、長さ100mm、幅100mm、厚さ5.5m
m、肉厚2mmの枠形状とした。これを、平均直径約5
0μmのガラスビーズにてブラスト処理した後、5%水
酸化ナトリウム溶液(40℃)あるいは15%フッ化ア
ンモニウム溶液(50℃)でエッチング処理し、これを
15%硫酸中で陽極酸化処理(20℃,1A/dm2
し様々な膜厚の陽極酸化皮膜を形成した。その後さら
に、表3のような二次電解析出による着色処理を施し
(ただしNo.20は染料 サンド社MLWによる染色ア
ルマイト。)、その後、酢酸ニッケル系封孔浴(サンド
社製:シーリングソルトAS 5g/リットル,95
℃,10分)で封孔処理した。
Ingots of the chemical composition shown in Table 1 (diameter of about 200
mm extruded plate (for alloy ABC-width 1)
15mm x thickness 7mm, for alloy DEF-width 115mm x
(Thickness 8 mm) was subjected to solution treatment / water quenching at 460 ° C. for 1 hour and artificial aging treatment at 120 ° C. for 25 hours. As a result, the yield strength of the material is 350 N / m as shown in Table 2.
m 2 or more. This is mainly cut by an NC processing machine, and the length is 100 mm, the width is 100 mm, and the thickness is 5.5 m.
The frame shape was m with a wall thickness of 2 mm. The average diameter is about 5
After blasting with 0 μm glass beads, etching treatment with 5% sodium hydroxide solution (40 ° C.) or 15% ammonium fluoride solution (50 ° C.) was performed, and this was anodized in 15% sulfuric acid (20 ° C.). , 1 A / dm 2 )
Then, anodized films with various thicknesses were formed. After that, a coloring treatment by secondary electrolytic deposition as shown in Table 3 is further performed (however, No. 20 is a dyed alumite dyed by MLW of Dye Sand Co.), and then a nickel acetate-based sealing bath (Sand Co .: Sealing Salt AS). 5 g / liter, 95
Sealing treatment was performed at 10 ° C for 10 minutes.

【0018】その結果、本願発明材は、L値<40で光
沢度(60゜)<10の低反射性黒色表面が得られた
(表4)。これに対し、膜厚や表面粗度が本発明の規定
をはずれる表4のNo.16〜19では、色調あるいは
皮膜特性の点で不具合があった。なお、合金D、E、F
は化学成分として再結晶粒の微細化作用を有するMn,
Cr,Co,Zr,Ni,Vが実質上添加されていない
ので、溶体化処理時に部分的に再結晶粒の粗大化が起こ
り、切削加工前の素材で比較的厚い表面粗大再結晶部が
生じる。この為、これを完全に除去する必要から、合金
A、B、Cでは7→5.5mmの切削加工で済むのに対
し、安全率も含めて、合金D、E、Fでは8→5.5m
mの切削加工を施さなければならなかった。
As a result, the material of the present invention had a low reflective black surface with L value <40 and gloss (60 °) <10 (Table 4). On the contrary, the film thickness and the surface roughness deviate from the specifications of the present invention. In Nos. 16 to 19, there was a problem in terms of color tone or film characteristics. In addition, alloys D, E, F
Is a chemical component that has the effect of refining recrystallized grains,
Since Cr, Co, Zr, Ni, and V are not substantially added, the recrystallized grains are partially coarsened during the solution treatment, and a relatively thick surface coarse recrystallized portion is generated in the material before cutting. . For this reason, since it is necessary to completely remove this, the alloys A, B, and C can be cut by 7 → 5.5 mm, while the alloys D, E, and F are 8 → 5. 5m
m had to be cut.

【0019】[0019]

【表1】 [Table 1]

【0020】[0020]

【表2】 [Table 2]

【0021】[0021]

【表3】 [Table 3]

【0022】[0022]

【表4】 [Table 4]

【0023】上記のうち、実施例No.4、7、8、
9、11、13と比較例 No.20(染色アルマイト
品)について、KrFエキシマレーザー を照射して、
色調変化を調べた。結果を表5に示す。エキシマレーザ
ーの照射条件は、照射強度0.5mJ/cm2のパルス
光を5×5mmの部位に当て、総照射量で20000J
/cm2となるようにしたものである。
Among the above, Example No. 4, 7, 8,
9, 11, 13 and Comparative Example No. 20 (dyed alumite product) is irradiated with KrF excimer laser,
The change in color tone was examined. The results are shown in Table 5. The excimer laser irradiation conditions are as follows: pulsed light with an irradiation intensity of 0.5 mJ / cm 2 is applied to a site of 5 × 5 mm, and the total irradiation amount is 20,000 J.
It is obtained by the / cm 2 and so as.

【0024】[0024]

【表5】 [Table 5]

【0025】その結果は表5に示す通りで、本発明品は
エキシマレーザー照射によりほとんど色調の変化が無
く、黒色外観を維持できるのに対し、有機染料を用いた
いわゆる染色アルマイト品は著しい退色が起こり黒色を
維持できない。
The results are shown in Table 5. The product of the present invention hardly changes in color tone by excimer laser irradiation and can maintain a black appearance, whereas the so-called dyed alumite product using an organic dye shows a marked fading. It happens and cannot keep black.

【0026】[0026]

【発明の効果】本発明では、紫外線やエキシマレーザー
に対する耐光性に優れた低反射黒色色調を持つ半導体製
造用防塵枠部材およびその製造法に関するもので、特に
半導体回路転写の光源の短波長化(エキシマレーザー
化)に対応できるため、半導体部品の高性能化に寄与す
ること大である。
INDUSTRIAL APPLICABILITY The present invention relates to a dustproof frame member for semiconductor production having a low reflection black color tone which is excellent in light resistance to ultraviolet rays and excimer lasers, and a method for producing the same. Since it can be applied to excimer laser, it will greatly contribute to the high performance of semiconductor parts.

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G03F 1/08 - 1/16 H01L 21/027 Front page continuation (58) Fields surveyed (Int.Cl. 7 , DB name) G03F 1/08-1/16 H01L 21/027

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 Zn3.5〜9.5%,Mg1〜4.5
%、Cu0〜3%を含み残部不純物とAlとからなり、
耐力が350N/mm2以上の、枠状のAl合金部材
で、表面に形成された膜厚4〜35μmの陽極酸化被膜
のポアー中にNi,Co,Cu,Sn,Feの1種また
は2種以上が電解析出してL値<40の黒色となってい
ることを特徴とする耐光性に優れた低反射回路転写装置
用防塵枠部材。
1. Zn 3.5 to 9.5%, Mg 1 to 4.5
%, Cu 0 to 3%, and the balance impurities and Al,
A frame-shaped Al alloy member having a proof stress of 350 N / mm 2 or more, and one or two kinds of Ni, Co, Cu, Sn, and Fe in the pores of the anodized film having a film thickness of 4 to 35 μm formed on the surface. A dustproof frame member for a low reflection circuit transfer device having excellent light resistance, characterized in that the above is electrolytically deposited to become black with an L value of <40.
【請求項2】 Al合金部材がさらに、Mn0.05〜
0.35%,Cr0.05〜0.35%,Co0.05
〜0.35%,Zr0.05〜0.35%,Ni0.0
5〜0.35%、V0.05〜0.35%の1種または
2種以上を含む事を特徴とする請求項1記載の低反射回
路転写装置用防塵枠部材。
2. The Al alloy member further has Mn of 0.05 to
0.35%, Cr0.05-0.35%, Co0.05
~ 0.35%, Zr0.05 ~ 0.35%, Ni0.0
The dust-proof frame member for a low-reflection circuit transfer device according to claim 1, which contains one or more of 5 to 0.35% and V0.05 to 0.35%.
【請求項3】 表面粗度がRaで0.3〜1.2μmに
調整されていることを特徴とする請求項1または請求項
2記載の低反射回路転写装置用防塵枠部材。
3. The dustproof frame member for a low-reflection circuit transfer device according to claim 1, wherein the surface roughness Ra is adjusted to 0.3 to 1.2 μm.
【請求項4】 請求項1または請求項2に記載の化学組
成を有するAl合金素材を溶体化処理および人工時効処
理により耐力を350N/mm2以上とし、これに枠形
状付与加工を行い、硫酸浴中で表面に膜厚4〜35μm
の陽極酸化被膜を形成した後、Ni塩、Co塩、Cu
塩、Sn塩,Fe塩の1種または2種以上を添加した浴
中で電解析出処理して着色し黒色化することを特徴とす
る耐光性に優れた低反射回路転写装置用防塵枠部材の製
造方法。
4. An aluminum alloy material having the chemical composition according to claim 1 or 2 is subjected to solution heat treatment and artificial aging treatment to have a proof stress of 350 N / mm 2 or more, which is subjected to frame shape imparting processing, and sulfuric acid. Film thickness 4-35μm on the surface in the bath
After forming the anodic oxide film of Ni, Co salt, Cu
A dust-proof frame member for a low-reflection circuit transfer device having excellent light resistance, which is characterized by being electrolytically deposited in a bath to which one or more of salt, Sn salt, and Fe salt are added, and colored and blackened. Manufacturing method.
JP06941596A 1996-02-29 1996-02-29 Dustproof frame member for low reflection circuit transfer device excellent in light resistance and method of manufacturing the same Expired - Fee Related JP3361429B2 (en)

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JP3361429B2 true JP3361429B2 (en) 2003-01-07

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