JP3340353B2 - Manufacturing method of liquid crystal image display device and liquid crystal image display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal image display device using a thin film semiconductor device as a switch device.

[0002]

2. Description of the Related Art In a liquid crystal display device, in order to enable dynamic operation of a liquid crystal cell and to realize multiplexing, a unit pixel composed of a liquid crystal cell and a nonlinear switch element such as a transistor or a diode is used. Must be arranged in a dimensional matrix.

FIG. 11 shows an equivalent circuit of an active type liquid crystal image display device using an insulated gate transistor 1 as a non-linear switch element, 2 is a liquid crystal cell, 3 is a scanning line,
4 is a signal line. The element drawn with a solid line is formed on one glass substrate constituting the liquid crystal image display device, and the counter electrode 5 drawn with a dotted line and common to all liquid crystal cells is formed on the other glass substrate. .

When the off-resistance of the insulated gate transistor 1 or the resistance of the liquid crystal cell 2 is low or when importance is placed on the gradation of a displayed image, an auxiliary for increasing the time constant of the liquid crystal cell 2 as a load is provided. Circuit measures such as adding the storage capacitor 6 to the liquid crystal cell 2 in parallel are added. Several methods are available for configuring the storage capacitor 6, and FIG. 11 shows a storage capacitor line 30 common to all picture elements.

FIG. 12 is a plan view of an active substrate, which is one transparent insulating substrate constituting a liquid crystal image display device.
FIG. 13 is a cross-sectional view of the liquid crystal image display device corresponding to line AA ′ in FIG. Here, a thin film transistor using amorphous silicon as a semiconductor material is described as a thin film semiconductor element.

The insulated gate transistor 1 is formed of at least a part of the scanning line 3 and has a thickness of about 0.1 μm.
A gate electrode 3a made of a thin film and a metal layer having a thickness of about 0.5 μm, for example, a signal line (for example, Al) formed so as to partially overlap the gate electrode 3a via the gate insulating layer 13 and the semiconductor layer 12 Source) 4 and drain electrode 7
It is composed of

The liquid crystal cell 2 has a glass substrate 9 on which a pixel electrode 8 made of transparent conductive ITO having a thickness of about 0.1 μm is formed, and a common counter electrode 5 also made of ITO. The liquid crystal cell 2 having a thickness of several μm is filled with liquid crystal to form a liquid crystal layer 11. In order to obtain a color display, it is necessary that an appropriate colored layer is formed on the other glass substrate 10.

The semiconductor layer 12 is formed of amorphous silicon having a thickness of about 0.1 to 0.3 μm and containing almost no impurities in an island shape, and the gate insulating layer 13 has a thickness of 0.3 μm.
m of a silicon nitride layer (Si ₃ N ₄ ). These thin films are formed on a glass substrate 9 using a low-temperature film forming apparatus such as PCVD.
Is formed on the substrate.

[0009] In order to facilitate understanding, the configuration of the liquid crystal image display device is described with respect to the minimum constituent factors. Therefore, for example, a technique of interposing an amorphous silicon layer containing phosphorus as an impurity between the source / drain wirings 4 and 7 and the semiconductor layer 12 in order to enhance the ohmic properties of the source / drain of the insulated gate transistor,
Alternatively, a technique in which a heat-resistant barrier metal such as Cr, Mo, or Ti is interposed between the source / drain wirings 4, 7 and the amorphous silicon layer containing impurities in order to increase the heat resistance of the insulated gate transistor, A description of a technique for forming a passivation insulating layer made of a silicon nitride layer (Si ₃ N ₄ ) on an active glass substrate 9 to improve the reliability of the device for a long time or for a long time has been omitted.

FIG. 13 also does not show constituent elements necessary for an optical element such as an alignment film, a polarizing plate, and a light source necessary for operating the liquid crystal cell, and a spacer material for regulating the thickness of the liquid crystal cell. are doing.

There are many improvements in performance as a display device, such as brightness, contrast ratio, and visibility. However, there is a greater demand for a liquid crystal display device having a large aperture ratio than at the beginning of commercialization in order to reduce power consumption. .

The aperture ratio is an area ratio of a region which effectively contributes to display to a unit picture element. In a liquid crystal device incorporating an amorphous silicon thin film transistor, in addition to the picture element electrode which contributes to display, Thin film transistors and signal lines,
Aperture ratio is 100% due to the presence of electrode wiring such as scanning lines
Can not be. In particular, in the case of a high-definition device, the ratio of the electrode wiring is high, and it is difficult to increase the aperture ratio. If the liquid crystal device is colored, the aperture ratio is further reduced by a black matrix that fills the R, G, and B colored layers of the color filter as one substrate.

The present inventor has already established a technique for increasing the aperture ratio in Japanese Patent Publication No. 5-35433. This is shown in FIG.
And the configuration shown in FIG. FIG. 14 is a plan view of the one glass substrate 9 as one active substrate constituting the liquid crystal image display device.
FIG. 15 shows a cross-sectional view of the glass substrate 9 taken along line -A '.

As shown in FIG. 15, a thin film transistor 1 having an amorphous silicon layer 12 as a semiconductor material as a semiconductor material is provided on one glass substrate 9 constituting a liquid crystal device. After forming the scanning lines 3, the signal lines 4, and the drain electrodes 7 made of the material, the pixel electrodes 8 are formed.
The core of the technique is to form a transparent conductive layer 14 to be formed on the entire surface, apply a negative photosensitive resin 15, and irradiate ultraviolet rays 16 from the back surface of the glass substrate 9.

Since the area excluding the light-blocking semiconductor layer 12, the scanning line 3, the signal line 4, and the drain electrode 7 is selectively left by back-surface exposure, the effective utilization rate of the formed pixel electrode 8 'is reduced. As shown by the thick outline in FIG. 14, the scanning lines 3 and the signal lines 4 are formed as much as possible in the unit picture element,
This is an excellent technology that is 00%.

Since the drain electrode 7 of the thin film transistor to which the pixel electrode 8 'is connected is usually made of the same material as the signal line 4, only the exposure from the back surface of the glass substrate 9 causes the drain electrode 7 to be over the drain electrode 7. The picture element electrode cannot be left. Therefore, as shown in FIG. 15, a photomask 18 on which a Cr pattern 17 having an opening of an appropriate size is applied is used, and ultraviolet light 19 is irradiated from above the glass substrate 9 through the photomask 18. A part of the pixel electrode is also formed on the drain electrode 7 by using a photolithography technique.

[0017]

While the size of the liquid crystal display device has been increasing year by year due to the demands of the times, the exposure equipment used for microfabrication for manufacturing these devices has also been required to increase the irradiation area. The cost of production equipment is also increasing due to the expansion of the lens system and the stepping area, and process development that does not require precise exposure technology is important. Improvements in productivity and rationalization of processes are required.

However, according to the prior art, in order to manufacture a liquid crystal image display device having a large aperture ratio, as described above, a backside light source for exposing from the backside of the glass substrate 9 and a photomask 18 are used to expose from above the glass substrate 9. There is a disadvantage that a part of the pixel electrode cannot be formed on the drain electrode 7 unless the surface exposure is performed in combination.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a liquid crystal display device and a liquid crystal image display device that can simplify a manufacturing process by forming a pixel electrode only by back exposure. And

[0020]

According to a method of manufacturing a liquid crystal image display device of the present invention, a drain electrode is exposed to light from the back surface passing through an opening provided in a drain electrode of an insulated gate transistor connected to a picture element electrode. And exposing the photosensitive resin on the transparent conductive layer located on the substrate.

According to the present invention, the transparent conductive layer serving as a picture element electrode can be left on the drain electrode in spite of only the back surface exposure, and the process of forming the picture element electrode can be simplified.

[0022]

A method of manufacturing a liquid crystal image display device according to claim 1, wherein a thin film transistor having a thin film layer made of a light-blocking material on one principal surface and a transparent conductive material connected to a drain electrode of the thin film transistor are provided. A first transparent insulating substrate in which unit picture elements each having at least one picture element electrode are arranged in a two-dimensional matrix, and a second transparent substrate having at least a transparent insulating layer formed on one main surface. In manufacturing a liquid crystal image display device in which a liquid crystal is filled between an insulating substrate and a liquid crystal display device, a pixel electrode is formed by forming a thin film layer made of a light shielding material on one main surface of a first transparent insulating substrate. TFT, scanning lines including the gate electrode of the thin film transistor, and a drain electrode formed with an opening in a region that does not overlap with the signal line and a gate electrode including a source electrode of the thin film transistor A transparent conductive layer is formed on the first transparent insulating substrate, a negative photosensitive resin is applied on the transparent conductive layer, and light is irradiated from the other main surface of the first transparent insulating substrate. The photosensitive resin in a region to be a pixel electrode is exposed to light, and the pixel electrode is selectively formed using the photosensitive resin selectively left after development of the photosensitive resin as a mask.

A method of manufacturing a liquid crystal image display device according to claim 2, wherein a thin film transistor having a thin film layer made of a light-blocking material on one principal surface and a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor Between a first transparent insulating substrate in which unit picture elements having at least one each are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface In manufacturing a liquid crystal image display device in which liquid crystal is filled in, a pixel electrode is formed by forming a thin film transistor having a thin film layer made of a light blocking material on one main surface of a first transparent insulating substrate; scanning lines including the gate electrode, the signal line and gate electrode including a source electrode of the thin film transistor
After forming a drain electrode having a first opening in a region that does not overlap with the pole , a transparent insulating layer is formed over the entire surface and flattened, and a second opening is formed in a transparent insulating layer over the drain electrode of the thin film transistor; A transparent conductive layer is formed on the transparent insulating layer, a negative photosensitive resin is applied on the transparent conductive layer, and light is irradiated from above the other main surface of the first transparent insulating substrate to form a picture element. A photosensitive resin in a region to be an electrode is exposed, and a pixel electrode is selectively formed using the photosensitive resin selectively left after development of the photosensitive resin as a mask.

[0024]

A method of manufacturing a liquid crystal image display device according to claim 3 , wherein a thin film transistor having a thin film layer made of a light-blocking material on one main surface and a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor A first transparent insulating substrate in which unit picture elements each having at least one and a storage capacitor are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface When manufacturing a liquid crystal image display device filled with liquid crystal between the pixel electrode, the formation of the picture element electrode, a thin film transistor having a thin film layer made of a light blocking material on one main surface of the first transparent insulating substrate, scanning lines including the gate electrode of the thin film transistor, the storage capacitor lines, drain having a first opening in a region that does not overlap with the signal line and the gate electrode including the source electrode of the thin film transistor Storage volume comprises an electrode and the storage capacitor line
After forming a storage electrode having a third opening in a region that does not overlap with the quantum line , a transparent insulating layer is formed over the entire surface and flattened, and a second insulating film is formed on the drain electrode of the thin film transistor and the transparent insulating layer on the storage electrode. An opening is formed, a transparent conductive layer is formed on the transparent insulating layer, a negative photosensitive resin is applied on the transparent conductive layer, and from the other main surface of the first transparent insulating substrate. Irradiating the photosensitive resin in a region to be a pixel electrode by irradiating light, and selectively forming a pixel electrode using the photosensitive resin selectively left after development of the photosensitive resin as a mask; And

5. A method of manufacturing a liquid crystal image display device according to claim 4 , wherein the thin film transistor has a thin film layer made of a light-blocking material on one main surface, and a transparent conductive pixel electrode connected to a drain electrode of the thin film transistor. at least a first transparent insulating substrate, each one has a unit pixel having are arranged in a two-dimensional matrix, a second transparent insulating at least a transparent insulating layer is formed on one principal surface and the storage capacity and In manufacturing a liquid crystal image display device in which liquid crystal is filled between a substrate and a substrate, a pixel electrode is formed by a thin film transistor having a thin film layer made of a light-blocking material on one main surface of a first transparent insulating substrate. , the scanning lines including the gate electrode of the thin film transistor, the storage electrode and a gate having a third opening in a region that does not overlap with the signal line and a gate electrode including a source electrode of the thin film transistor After forming a drain electrode having a first opening in a region not overlapping To pole is planarized by forming the entire surface transparent insulating layer, a second opening in the transparent insulating layer on the storage electrode on the drain electrode of the thin film transistor Form a part,
A transparent conductive layer is formed on the transparent insulating layer, a negative photosensitive resin is applied on the transparent conductive layer, and light is irradiated from the other main surface of the first transparent insulating substrate to the picture. The photosensitive resin in a region to be a pixel electrode is exposed, and the pixel electrode is selectively formed using the photosensitive resin selectively left after development of the photosensitive resin as a mask.

A method of manufacturing a liquid crystal image display device according to claim 5 , wherein a thin film transistor having a thin film layer made of a light-blocking material on one main surface and a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor. at least a first transparent insulating substrate, each one has a unit pixel having are arranged in a two-dimensional matrix, a second transparent insulating at least a transparent insulating layer is formed on one principal surface and the storage capacity and In manufacturing a liquid crystal image display device in which liquid crystal is filled between the substrate and the substrate, the first transparent insulating substrate is formed by scanning a substrate including a gate electrode of a thin film transistor on one main surface of the first transparent insulating substrate. Forming a line and a storage capacitor line, and sequentially forming at least one layer of a first insulating layer serving as a gate insulating layer, a first semiconductor layer serving as a channel of a thin film transistor, and a second insulating layer over the entire surface. Depositing a second semiconductor layer containing impurities on the entire surface, exposing the first semiconductor layer while selectively leaving the second insulating layer on the gate electrode, Applying one or more metal layers to
A signal line and a gate including a source electrode of a thin film transistor partially including a second insulating layer selectively removed by selectively removing the one or more metal layers and the second and first semiconductor layers.
Overlap the storage capacitor line includes a drain electrode and the storage capacitor line having a first opening of the plurality in a region that does not overlap with the electrode
Forming a storage electrode having a plurality of third openings in a region where there is not , forming a transparent insulating layer over the entire surface and planarizing the same, and forming a thin film transistor on a drain electrode, a storage electrode, and a terminal electrode. Forming a second opening in the transparent insulating layer, exposing the terminal electrode by removing the first insulating layer on the scanning electrode terminal electrode, and forming a transparent conductive layer on the transparent insulating layer. Forming a layer, applying a negative photosensitive resin on the transparent conductive layer, and irradiating light from the other main surface of the first transparent insulating substrate to a photosensitive area of a pixel electrode area. The method is characterized in that the resin is exposed to light, and the pixel electrodes are selectively formed using the photosensitive resin selectively left after the development of the photosensitive resin as a mask.

A method of manufacturing a liquid crystal image display device according to claim 6 , wherein a thin film transistor having a thin film layer made of a light-blocking material on one main surface and a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor at least a first transparent insulating substrate, each one has a unit pixel having are arranged in a two-dimensional matrix, a second transparent insulating at least a transparent insulating layer is formed on one principal surface and the storage capacity and In manufacturing a liquid crystal image display device in which liquid crystal is filled between the substrate and the substrate, the first transparent insulating substrate is formed by scanning a substrate including a gate electrode of a thin film transistor on one main surface of the first transparent insulating substrate. Forming a line, and applying a first insulating layer to be at least one or more gate insulating layers, a first semiconductor layer to be a channel of the thin film transistor, and a second insulating layer sequentially over the entire surface; Exposing the first semiconductor layer while selectively leaving the second insulating layer on the gate electrode, depositing a second semiconductor layer containing impurities on the entire surface, and forming one or more layers on the entire surface. A thin film transistor including a step of depositing a metal layer and a second insulating layer selectively removed by selectively removing the one or more metal layers and the second and first semiconductor layers Signal line including the source electrode and the gate electrode
A drain electrode having a plurality of first openings in a region, and a plurality of third electrodes in a region including on the scanning line and not overlapping with the scanning line.
Forming a storage electrode having an opening, forming a transparent insulating layer over the entire surface and planarizing the transparent insulating layer, and forming a second transparent insulating layer on the drain electrode, the storage electrode, and the terminal electrode of the thin film transistor. Forming an opening, removing the first insulating layer on the scanning electrode terminal electrode to expose the terminal electrode, forming a transparent conductive layer on the transparent insulating layer, A negative photosensitive resin is applied on the transparent conductive layer, and light is irradiated from above the other main surface of the first transparent insulating substrate to expose the photosensitive resin in a region to be a pixel electrode, thereby obtaining the photosensitive resin. The pixel electrode is selectively formed using the photosensitive resin selectively left after the development of the resin as a mask.

According to a seventh aspect of the present invention, there is provided a liquid crystal image display device comprising at least a thin film transistor having a thin film layer made of a light-blocking material on one main surface and a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor. A liquid crystal is interposed between a first transparent insulating substrate in which unit pixels each having one are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. In the liquid crystal image display device, the scanning lines including the gate electrodes of the thin film transistors interconnecting the unit picture elements and the signal lines including the source electrodes of the thin film transistors are connected to the drains.
The in-electrode is formed of a thin film layer made of a light-blocking material,
The drain electrode is a first region which does not overlap with the gate electrode .
An opening for exposing a gate insulating layer formed on the transparent insulating substrate is provided, and the transparent electrode which becomes the picture element electrode through a photo-etching step by exposure from the back surface over the drain electrode to the gate insulating layer. A conductive layer is provided.

According to this configuration, when the transparent conductive layer formed on the drain electrode is exposed by exposing the negative photosensitive resin layer applied on the transparent conductive layer to form a resist film and etching is performed. By exposing from the back side of the first transparent insulating substrate, the negative photosensitive resin layer can be exposed through the opening formed in the drain electrode.

According to a eighth aspect of the present invention, there is provided a liquid crystal image display device comprising at least a thin film transistor having a thin film layer made of a light-blocking material on one main surface and a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor. A liquid crystal is interposed between a first transparent insulating substrate in which unit pixels each having one are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. In the liquid crystal image display device, the scanning lines including the gate electrodes of the thin film transistors interconnecting the unit picture elements and the signal lines including the source electrodes of the thin film transistors are connected to the drains.
The in-electrode is formed of a thin film layer made of a light-blocking material,
The drain electrode is a first region which does not overlap with the gate electrode .
A first opening for exposing a gate insulating layer formed on the transparent insulating substrate is provided; a transparent insulating layer is provided from above the drain electrode to the gate insulating layer; Providing a second opening in which a part of the drain electrode is exposed in the vicinity of the opening, and performing a photolithography process by exposing from the back surface over the transparent insulating layer and through the second opening to the drain electrode. And a transparent conductive layer serving as the picture element electrode is provided.

According to this structure, the transparent conductive layer formed on the drain electrode via the transparent insulating layer is exposed to the negative photosensitive resin layer applied on the transparent conductive layer to form a resist film. When performing the etching, the negative photosensitive resin layer can be exposed through the first opening formed in the drain electrode by exposure from the back side of the first transparent insulating substrate.

[0033]

According to a ninth aspect of the present invention, there is provided a liquid crystal image display device, comprising: a thin film transistor having a thin film layer made of a light-blocking material on one principal surface; a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor; Between a first transparent insulating substrate in which unit picture elements having at least one each are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface wherein the liquid crystal image display device formed by filling a liquid crystal, a scanning line including a gate electrode of the thin film transistor interconnecting the units pixel, the storage capacitor lines and storage capacitor lines and including accumulation electrostatic <br/> poles A signal line including a source electrode of the thin film transistor and a drain electrode are formed of a thin film layer made of a light-blocking material, and the drain electrode is a region which does not overlap with a gate electrode.
The storage electrode double gate insulating layer formed on the first transparent insulating substrate in a region which does not overlap with the storage capacitor line is exposed
A plurality of first and third openings are provided, a transparent insulating layer is provided from above the drain electrode to the gate insulating layer, and the transparent insulating layer is provided with a drain electrode near the first opening. Part and part of the storage electrode near the third opening
DOO is provided a second opening exposing, and the picture element electrode via a photolithography process due to exposure from the back side toward the drain electrode and the storage electrode through the upper and the second opening of the transparent insulating layer A transparent conductive layer is provided.

According to this structure, the transparent conductive layer formed on the drain electrode and the storage electrode via the transparent insulating layer is exposed to the negative photosensitive resin applied on the transparent conductive layer. When etching by forming a resist film by
By exposure from the back side of the first transparent insulating substrate, the negative photosensitive layer is exposed on the drain electrode through the first opening formed in the drain electrode and on the storage electrode through the third opening formed in the storage electrode. The conductive resin can be exposed. The liquid crystal image display device according to claim 10 , wherein the thin film transistor has a thin film layer made of a light-blocking material on one main surface, a transparent conductive pixel electrode connected to a drain electrode of the thin film transistor, and a storage capacitor. A liquid crystal is interposed between a first transparent insulating substrate in which unit pixels each having one are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. In the liquid crystal image display device, the unit pixel is interconnected with the scan line including the gate electrode of the thin film transistor, the storage electrode including the scan line, the signal line including the source electrode of the thin film transistor, and the drain electrode. The drain electrode is formed of a thin film layer made of a barrier material.
Or storage electrode in a region not overlapping with the gate electrode and the scan line
A plurality of first and third openings are provided such that a gate insulating layer formed on a first transparent insulating substrate is exposed in a non-overlapping region, and a transparent insulating layer is provided from above the drain electrode to the gate insulating layer. Wherein the transparent insulating layer has a second opening in which a part of the drain electrode near the first opening and a part of the storage electrode near the third opening are exposed. A transparent conductive layer serving as the picture element electrode is provided through a photolithography process by exposure from the back surface over the transparent insulating layer and the drain electrode and the storage electrode through the second opening. Features.

According to this configuration, the transparent conductive layer formed on the drain electrode and the storage electrode via the transparent insulating layer is exposed to the negative photosensitive resin layer applied on the transparent conductive layer. When a resist film is formed and etched by exposure to light from the back side of the first transparent insulating substrate,
The negative photosensitive resin layer can be exposed on the drain electrode through the first opening formed in the drain electrode and also on the storage electrode through the third opening formed in the storage electrode.

A liquid crystal image display device according to claim 11 , wherein a thin film transistor having a thin film layer made of a light-blocking material on one principal surface, a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and a storage capacitor. Between a first transparent insulating substrate in which unit picture elements having at least one each are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface wherein the liquid crystal image display device formed by filling a liquid crystal, a scanning line including a gate electrode of the thin film transistor interconnecting the units pixel, the storage capacitor lines and storage capacitor lines and including storage <br/> electrode to a thin film transistor The signal line including the source electrode and the drain electrode are formed of a thin film layer made of a light-blocking material, and the drain electrode does not overlap with the gate electrode.
The storage electrode has a gate insulating layer formed on the first transparent insulating substrate and a plurality of first and third openings exposing the first transparent insulating substrate in a region not overlapping with the storage capacitor line. A transparent insulating layer is provided from above the drain electrode to the gate insulating layer, and the transparent insulating layer includes a portion of the drain electrode near a first opening and a portion near a third opening. a second opening portion and is exposed of the storage electrode is provided, according to the exposure from the back side toward the drain electrode and the storage electrode through the upper and the second opening of the transparent insulating layer <br/> photo-etching A transparent conductive layer serving as the picture element electrode is provided through a process.

According to this structure, the transparent conductive layer formed on the drain electrode and the storage electrode via the transparent insulating layer is exposed to the negative photosensitive resin layer applied on the transparent conductive layer. When a resist film is formed and etched by exposure to light from the back side of the first transparent insulating substrate,
The negative photosensitive resin layer can be exposed on the drain electrode through the first opening formed in the drain electrode and also on the storage electrode through the third opening formed in the storage electrode. Also, the step of forming an opening in the terminal electrode of the scanning line includes:
Since this is performed simultaneously with the formation of the second opening in the transparent insulating layer, the number of manufacturing steps is reduced.

According to a twelfth aspect of the present invention, there is provided a liquid crystal image display device comprising: a thin film transistor having a thin film layer made of a light-blocking material on one principal surface; a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor; Between a first transparent insulating substrate in which unit picture elements having at least one each are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface in the liquid crystal image display device formed by filling the liquid crystal, the signal line and the drain comprising a source electrode of the thin film transistor and the storage electrode comprising scanning lines and the scanning lines line including a gate electrode of the thin film transistor interconnecting the units picture element electrode
: It is formed by a thin film layer made of a light blocking material, the drain electrode is a gate insulating also the storage electrode in a region not overlapping with the gate electrode formed on the first transparent insulating substrate in a region which does not overlap with the scan line A plurality of first and third openings through which the layer and the first transparent insulating substrate are exposed; a transparent insulating layer is provided from above the drain electrode to the gate insulating layer; A part of the drain electrode near the first opening and the storage electrode near the third opening;
And a second opening through which a portion of the pixel is exposed. The pixel is passed through a photo-etching process by exposing from the back surface over the transparent insulating layer and through the second opening to the drain electrode and the storage electrode. A transparent conductive layer serving as an electrode is provided.

According to this structure, the transparent conductive layer formed on the drain electrode and the storage electrode via the transparent insulating layer is exposed to the negative photosensitive resin layer applied on the transparent conductive layer. When a resist film is formed and etched by exposure to light from the back side of the first transparent insulating substrate,
The negative photosensitive resin layer can be exposed on the drain electrode through the first opening formed in the drain electrode and also on the storage electrode through the third opening formed in the storage electrode. Also, the step of forming an opening in the terminal electrode of the scanning line includes:
Since this is performed simultaneously with the formation of the second opening in the transparent insulating layer, the number of manufacturing steps is reduced.

Hereinafter, embodiments of the present invention will be described with reference to FIGS.
This will be described with reference to FIG. The same or corresponding parts as those in the conventional example are denoted by the same reference numerals. (Embodiment 1) FIGS. 1 and 2 show (Embodiment 1).

FIG. 1 is a plan view of one glass substrate 9 as an active substrate, and FIG. 2 is a cross-sectional view taken along the line AA 'in FIG. In the liquid crystal image display device according to the present invention, the thin film transistors, the scanning lines, the signal lines, and the drain electrodes are formed prior to the formation of the pixel electrodes as in the case of the prior application. The semiconductor material of the thin film transistor is a thin film of amorphous silicon, and the scanning lines and signal lines are also formed of a metal material. These materials are usually used in a film thickness (0.1 to 1.0 μm).
m) is opaque to ultraviolet light.

Therefore, first, the scanning line 3, the signal line 4, the drain electrode 7, and the semiconductor layer 12 which is an amorphous silicon layer
Is formed on one main surface of the glass substrate 9.

At this time, as shown in FIG. 1, an opening 20 is provided in a region not overlapping with the gate electrode 3 in the pattern of the drain electrode 7 to expose the underlying gate insulating layer 13. This is the main point of the present invention. Thereafter, a transparent conductive layer 14 of, for example, IТО is formed on the entire surface by 0.1 to 0.2 μm.
The film is deposited by using a vacuum film forming apparatus such as sputtering. A negative photosensitive resin 15 is applied thereon.

The negative photosensitive resin 15 may be a resin containing butadiene rubber resin as a main component and using an organic solvent such as xylene or butyl acetate as a developing solution (for example, OMR-trade name, manufactured by Tokyo Ohka). 83) Even if it is a chemically amplified type using a novolak resin which requires heating after exposure as a main component and an alkali liquid as a developer (for example, TFN-009PL (trade name, manufactured by Tokyo Ohka)), the transparent conductive layer If attention is paid to corrosion due to a chemical reaction between the signal line 14 and the signal line 4, the choice is free.

Then, the other main surface (back surface) of the glass substrate 9
Irradiation with ultraviolet rays 16 is performed. The transmittance of each of the glass substrate 9, the gate insulating layer 13, and the transparent conductive layer 14 decreases as the wavelength becomes shorter. However, in the wavelength range of 450 to 350 nm of the ultraviolet light used in the photolithography process, it is about several tens of percent. Since the resin has transmittance, the photosensitive resin can be exposed by ultraviolet irradiation from the back surface if the irradiation time of the ultraviolet light 16 is appropriately lengthened.

More specifically, as described above, since the scanning line 3, the signal line 4, the drain electrode 7, and the amorphous silicon semiconductor layer 12 hardly transmit ultraviolet light, a negative photosensitive resin is used. 15 is selectively exposed except for the opaque material described above.

At this time, the ultraviolet rays 16 ″ diverted by diffraction from the opening 20 formed in the drain electrode 7 can sensitize the photosensitive resin on the drain electrode 7. 16 diagonal component 1
By including 6 ′, a means for promoting the above-mentioned wraparound may be added. Although the above-mentioned wraparound of the back surface exposure acts in the direction of increasing the size of the pixel electrode pattern, it is not a very difficult technique to control the size of the pixel electrode by over-etching.

In any case, it is necessary to efficiently leave the photosensitive resin on the drain electrode 7, and for that purpose, the width L of the drain electrode around the opening 20 shown in FIG. Maximum resolution of the resolution, for example, 2-3 μm
Desirably. This is 1-1.5 μm on one side
This is equivalent to the necessity of wraparound, and this amount is the spread amount of the photosensitive resin pattern for forming the picture element electrode.

Thereafter, a photosensitive resin pattern selectively left on the glass substrate 9 can be obtained by development (in the case of a chemically amplified negative, heat treatment is required after exposure). . The photosensitive resin pattern is selectively left in the unit picture element except for the island-shaped semiconductor layer 12, the scanning line 3, the signal line 4, and a part of the drain electrode 7.

As described above, since the end of the opaque material and the end of the photosensitive resin pattern are substantially aligned on the same line, the transparent conductive layer 14 is formed using the photosensitive resin pattern as a mask.
To obtain a picture element electrode 8 ″ formed in a self-aligned manner as shown in FIG.

When the transparent conductive layer 14 is slightly over-etched during etching, a short circuit between the pixel electrode 8 "and the exposed signal line 4 can be prevented, and the occurrence of point defects can be suppressed. It is easy to see what can be done.

(Embodiment 2) FIGS. 3 and 4 show (Embodiment 2). FIG. 3 is a plan view of one substrate 9 as an active substrate, and FIG. 4 is a cross-sectional view taken along line AA ′ in FIG.

The difference from the first embodiment is shown in FIGS.
As can be understood from the comparison, a transparent insulating layer 21 is provided between the gate insulating layer 13 and the transparent conductive layer 14, and a portion of the transparent insulating layer 21 above the drain electrode 7 has a second The point is that the opening 22 is formed. In the pattern of the drain electrode 7, the gate is formed in the same manner as in the first embodiment.
An opening 20 is formed in a region that does not overlap with the electrode 3 .

In this (Embodiment 2), after forming a thin film transistor, a scanning line 3, a signal line 4, and a drain electrode 7 made of an opaque material, a transparent insulating layer 21 is applied or coated on the entire surface of the glass substrate 9. And flatten. The film thickness may be any value as long as it can fill the above-mentioned steps of the element on the glass substrate 9, and is selected from 1 to 3 μm. The flattening may be carried out by any method such as polishing after applying an inorganic insulating layer such as Si ₃ N ₄ , or leveling after applying a transparent insulating resin. The flatness is desirably high as described later, but if the maximum step is about 0.1 μm, it can be easily obtained by leveling after application of the resin layer even if left naturally.
When it is desired to form the transparent insulating layer 21 with a film thickness of 1 μm or more, the resin layer provides more preferable results from the viewpoints of a decrease in productivity due to the deposition method and generation of stress in the film. There will be.

After the flattened transparent insulating layer 21 is formed, an opening 22 is selectively formed by using a usual photolithography technique, and a part of the drain electrode 7 is exposed. At this time, it is needless to say that the use of a photosensitive material (for example, PC302 manufactured by Nippon Synthetic Rubber Co., Ltd .: PC302) as the transparent insulating layer 21 can rationalize the fine processing step. That is, the usual photosensitive resin coating and peeling steps are rationalized and the number of manufacturing steps is reduced.

Thereafter, a transparent conductive layer 14 is formed on the entire surface, and the negative photosensitive resin 15 is formed in the same manner as in the first embodiment.
The picture element electrode 8 ″ is formed in a self-aligned manner by irradiating ultraviolet rays from the back surface of the glass substrate 9 using the method described above.

Naturally, in this case, even if the picture element electrode 8 "is formed large due to overexposure or wraparound, the picture element electrode 8" and the signal line 4 are short-circuited because the transparent insulating layer 21 is interposed. There is no fear of doing. Drain electrode 7
A vertical line portion 23 where an area excluding the opening 20 of the above and the opening 22 formed in the transparent insulating layer 21 overlaps forms a part of the pixel electrode 8 ″ by the ultraviolet rays 16 wrapping around from the opening 20. Since the drain electrode 7 is exposed by the opening 22, it can be understood that the connection between the drain electrode 7 and the pixel electrode 8 ″ was formed only by the back surface exposure.

The planar overlap between the electrode lines 3 and 4 and the pixel electrode 8 ″ via the transparent insulating layer 21 causes deterioration of the displayed image such as generation of ghost as parasitic capacitance. It is preferable to form the pixel electrodes 8 ″ in a self-aligning manner by over-etching in consideration of the spread of the photosensitive resin pattern due to over-exposure.

However, the flattened transparent insulating layer 2
1 is, for example, 1.5 μm or more, the picture element electrode 8 ″
Is formed by overexposure, the parasitic capacitance formed between the picture element electrode 8 ″ and the scanning line 3 and the signal line 4 is small, and the displayed image is not deteriorated.

That is, it is electrically advantageous that the flattened transparent insulating layer 21 has a larger thickness and a smaller relative dielectric constant. However, the step of the opening 22 for connection between the drain electrode 7 and the picture element electrode 8 "increases, and the picture element electrode 8" is easily disconnected. Therefore, when forming the opening 22, the cross section is tapered. Note that the need for control arises.

(Embodiment 3) FIGS. 5, 6, and 7 show (Embodiment 3). FIG. 5 is a plan view of one substrate 9 which is an active substrate. FIG. 6 is a cross-sectional view taken along line AA ′ of FIG. FIG. 7 shows a plan view and a sectional view of the terminal electrode.

The difference from the second embodiment is shown in FIGS.
With the storage capacitor line 30 as can be seen by comparing is added, the opening 32 the third respectively in and the transparent insulating layer 21 pattern of the storage electrode 31 in the region which does not overlap with the storage capacitor line 30 second The opening 33 is formed. In the pattern of the drain electrode 7 and the transparent insulating layer 21, as in (Embodiment 1), an area that does not overlap with the gate electrode 3.
A first opening 20 and a second opening 22 are respectively formed in the region.

In this (Embodiment 3), the storage electrode 31
Has a plurality of third openings 32, the same operation as the opening 20 formed in the drain electrode 7 shown in FIG. 1 occurs, and the gate insulating layer 13, the transparent insulating layer 21, and the transparent conductive layer are formed. The negative photosensitive resin 15 on the storage electrode 31 via the layer 14 can be partially exposed by the diffracted light from the opening 32. Therefore, the pixel electrode 8 ″ can be formed near the opening 32 also on the storage electrode 31 made of an opaque material, and the pixel electrode 8 ″ and the storage electrode 31 are electrically connected. Thus, the storage electrode 31 (the pixel electrode 8 ″) and the storage capacitor line 30 can form the storage capacitor 6 via the gate insulating layer 13.

In order to prevent the picture element electrode 8 ″ from being divided by the storage capacitor line 30, two storage electrodes 31 are provided above and below the storage capacitor line 30, and the storage capacitor line 30 and the storage electrode 31 are short-circuited. The opening 32 is formed in the storage capacitor line 30 so as not to
Not placed above.

In this (Embodiment 3), as shown in FIGS. 5 and 7A, a thin film transistor made of an opaque material, a scanning line 3, a signal line 4, a storage capacitor line 30, a drain electrode 7, and a storage electrode After the formation of 31, the transparent insulating layer 21 is applied or formed on the entire surface of the glass substrate 9 and flattened. The film thickness may be any value as long as it can fill the above-mentioned steps of the element on the glass substrate 9, and is selected from 1 to 3 μm.

After the formation of the flattened transparent insulating layer 21, the second openings 22 and 33 are selectively formed by using a usual photolithography technique, and the drain electrode 7 and a part of the storage electrode 31 are formed. Exposed. At this time, the transparent insulating layer 21 is photosensitive (for example,
As described above, it is possible to rationalize the fine processing step by using the product made by Japan Synthetic Rubber (trade name: Optmer: PC302).

At this time, the terminal electrodes of the scanning lines 3 and the signal lines 4 provided outside the image display section are as shown in FIG. The terminal electrode 35 of the scanning line 3 is generally formed in the gate insulating layer 13 and the opening 2 where a part of the scanning line 3 is exposed.
4 and is formed simultaneously with the signal line 4 using the same material as the signal line 4. On the other hand, the terminal electrode 36 of the signal line 4 is formed such that the end of the signal line 4 performs its function. Accordingly, in order to expose the terminal electrodes, second openings 37 and 38 are formed in the transparent insulating layer 21 on the terminal electrodes 35 of the scanning lines 3 and on the terminal electrodes 36 of the signal lines 4, respectively.

Thereafter, as shown in FIG. 7B, a transparent conductive layer 14 is formed on the entire surface, and the glass substrate 9 is formed using a negative photosensitive resin 15 in the same manner as in the second embodiment. The photosensitive resin pattern 15 ′ is selectively obtained after development by exposure to ultraviolet light from the back surface.

[0070] Then, the photosensitive resin pattern 15 'to selectively form a picture element electrode 8' by etching the transparent conductive layer 14 as a mask, to claim 10 as shown in FIG. 7 (c) An active substrate for a liquid crystal image display device as described above is obtained.

(Embodiment 4) In the liquid crystal image display device according to the eleventh aspect, the storage capacitor 6 is composed of the picture element electrode 8 ″ and the preceding scanning line 3 via the first insulating layer 13. Runode, devised to form a suitable conductive thin film on the scanning line 3 made of opaque material is needed. overlap it with the scanning line 3, as shown in FIG. 8
Run the storage electrode 31 having a third opening 39 in the area without
Place on the査線3, is achieved by providing a second opening 40 in the transparent insulating layer 21 on the storage electrode 31, the opening also on the opaque accumulation electrode 31 by the diffraction light from the opening 39 It is easily understood that the pixel electrode 8 ″ is partially formed near the portion 39 .

(Embodiment 5) The above (Embodiments 3 and 4) are a method of forming a picture element electrode which can be applied to a conventional manufacturing method. , The method of forming a picture element electrode, that is, claims 5 and 6, and claims 11 and 1
2 will be described with reference to FIG. 5, FIG. 8, FIG. 9, and FIG.

The method of manufacturing the active substrate 9 according to the fifth aspect is as described below. First, as shown in FIG. 9A, the gate electrode 3a is formed on one main surface of the transparent insulating substrate 9.
Are selectively formed.
This step is the same as the conventional one.
A metal thin film layer of about m, such as Cr, Mo, or Al, may be formed using a vacuum film forming apparatus such as SPT.

Next, the first silicon nitride layer 13 serving as a gate insulating layer and the first amorphous silicon layer 41 and the second silicon nitride layer 42 containing almost no impurities are formed by using a plasma CVD apparatus, for example. 0.3, 0.05, respectively
The first amorphous silicon is deposited to a thickness of about 0.1 μm, and the second amorphous silicon nitride layer is selectively left on the gate 3a as shown in FIG. The layer 41 is exposed.

Subsequently, a second amorphous silicon layer 43 containing impurities is deposited on the entire surface by using a plasma CVD apparatus, and one or more metal thin film layers are further deposited on the entire surface, as shown in FIG.
As shown in (c), one or more metal thin film layers and the second and first amorphous silicon layers are selectively removed to expose the first insulating layer 13 and the second insulating layer 42 '. Then, the signal line 4 including the pair of source electrodes and the drain electrode 7 including a part of the second silicon nitride layer 42 ′ and the storage electrode 31 including the storage capacitor line 30 are selectively formed. At this time, a plurality of first openings 20 are formed in the drain electrode 7, and a plurality of third openings 32 are formed in the storage electrode 31 to form the first opening 20.
Of the insulating layer 13 is exposed.

Here, the reason for describing one or more metal thin-film layers is that, as long as a metal layer having high heat resistance such as Cr, Ti or the like is used, there is no problem even if one layer is used. If Al is used for this purpose, Cr, Ti, Mo having a film thickness of about 0.1 μm is ensured in order to secure ohmic properties between the signal line 4 and the second amorphous silicon layer 43 ′ containing impurities.
It is necessary to interpose a heat-resistant barrier metal layer such as Cr, T, etc. in order to avoid a problem due to an electrochemical reaction with ITO which is a transparent conductive layer in a subsequent step.
This is because, as a result of depositing another metal layer such as i, Mo, etc., the source / drain electrodes 4, 7 may have a three-layer structure as described above.

Source / drain electrodes 4 and 7 and storage electrode 3
After the formation of 1, a transparent insulating layer 21 is deposited on the entire surface to a thickness of, for example, 1 to 3 μm, and formed on the drain electrode 7 and the storage electrode 31 as shown in FIGS. 5 and 9D. Then, the second openings 22 and 33 are selectively formed to partially expose the drain electrode 7 and the storage electrode 31, respectively.

At this time, a second opening is formed in the transparent insulating layer 21 on the terminal electrode 35 of the scanning line 3 and on the terminal electrode 36 of the signal line 4 outside the image display section as shown in FIG. Part 3
7, 38 are formed simultaneously. (Embodiments 3 and 4)
Unlike this, the terminal electrode 35 of the scanning line 3 can be configured at an end of the scanning line 3. As a result, the signal line 4 is
A part of the terminal electrode 36 is exposed.

After that, as shown in FIG. 10B, the first insulating layer 13 in the opening 37 is selectively removed to expose a part of the terminal electrode 35 of the scanning line 3. At this time, the opening 3
The etching method and the selection of the material of the terminal electrode 36 that do not cause the terminal electrode 36 exposed in the inside 8 to disappear are in the category of the process design. At the same time, as shown in FIG. 9E, the first insulating layer 13 in the opening 22 is also removed, and a part of the drain electrode 7 and the transparent insulating substrate 9 are exposed in the opening 22.

Then, as shown in FIG.
A transparent conductive layer 14 having a thickness of about 0.1 μm is applied to the entire surface by using a vacuum film forming apparatus such as T, and a negative photosensitive resin 15 is further applied. The photosensitive resin 15 is selectively exposed by ultraviolet irradiation from the back surface of the insulating substrate 9 to obtain a photosensitive resin pattern 15 'as an etching mask for forming the pixel electrodes 8'.

A plurality of second openings 32 are formed in the storage electrode 31.
Exists, the operation is performed in exactly the same manner as the opening 20 formed in the drain electrode 7 shown in FIG. 1, and the storage electrode 31 is formed on the storage electrode 31 via the gate insulating layer 13, the transparent insulating layer 21 and the transparent conductive layer 14. The negative photosensitive resin 15 has the opening 3
It is possible to be exposed by the diffracted light from the second.
Therefore, the pixel electrode 8 ″ can be formed on the storage electrode 31 in the vicinity of the opening 32 as described above.

Using the selectively obtained photosensitive resin 15 ′ as an etching mask, the transparent conductive layer 14 is selectively removed to form a pixel electrode 8 ′ as shown in FIGS. 5 and 9 (f). And the rationalization process ends. The periphery of the terminal electrode 35 of the scanning line 3 and the periphery of the terminal electrode 36 of the signal line 4 do not need to be exposed to the back surface. Therefore, if measures are taken to prevent the photosensitive resin 15 from being exposed with an appropriate opaque mask, the periphery of the terminal electrode can be reduced. There is no danger of an unnecessary short circuit due to the presence of the transparent conductive layer.

(Embodiment 6) In the liquid crystal image display device according to the twelfth aspect, the storage capacitor 6 is composed of the picture element electrode 8 ″ and the preceding scanning line 3 via the first insulating layer 13. Runode, devised to form a suitable conductive thin film on the scanning line 3 made of opaque material is needed. overlap it with the scanning line 3, as shown in FIG. 8
Run the storage electrode 31 having a third opening 39 in the area without
Place on the査線3, is achieved by providing a second opening 40 in the transparent insulating layer 21 on the storage electrode 31, the opening also on the opaque accumulation electrode 31 by the diffraction light from the opening 39 It can be easily understood from the fourth embodiment that the pixel electrode 8 ″ is partially formed in the vicinity of the portion 39 .

[0084]

As described above, according to the present invention, all the regions except for the thin film transistor, the scanning line and the signal line in the unit picture element can be used as the picture element electrodes contributing to the display. The first feature is that a bright image can be obtained with a high aperture ratio of 100%, and the second feature is that the picture element electrodes are formed by a simple photolithography technique in which only backside exposure is performed. It can be said that it is a characteristic. This effect is particularly remarkable in a large-screen or high-definition liquid crystal image display device in which the alignment accuracy and resolution of the photolithography technology are reduced.

Further, in a liquid crystal image display device in which the display mode is a transmission type and normally white, when the display image is black (no signal), the light source light from the back surface of the image display device is completely blocked. The contrast ratio is also significantly improved.

Further, there is no or very small planar overlap between the picture element electrode and the scanning line or the picture element electrode and the signal line, and therefore, an extra increase in power consumption occurs when the liquid crystal image display device is electrically driven. Also, there is no image quality deterioration such as generation of ghost and deterioration of the SN ratio due to the increase of the parasitic capacitance.

In addition, the presence of the planarized transparent insulating layer formed under the pixel electrode automatically planarizes the pixel electrode. For this reason, since there is no extra step on the pixel electrode and also around the pixel electrode, extremely stable and smooth alignment processing can be performed at the time of alignment processing of the alignment film, and local non-alignment and generation of domains can be achieved. Therefore, the above-described improvement in the contrast ratio is further enhanced, and excellent effects such as easy achievement of an extremely high contrast ratio can be obtained.

As is clear from the above description, if the scanning lines and the signal lines are made of a light-blocking material and the non-linear switch element also has a thin film layer made of a light-blocking material, The non-linear switch element is effective not only for the insulated gate transistor described in the present invention but also for a two-terminal element such as a diode, a varistor, or a MIM. Even if polycrystalline or amorphous silicon, which is hardly permeated, is used, there is no problem as long as the resistance value is less restricted. The same applies to the structure and material of the insulated gate transistor. If the gate insulating layer is transparent, not only SiNx but also SiO ₂ can be used. It will also be apparent that no structural differences are subject to the limitations of the present invention. It has been proved that when a storage capacitor is required, a plurality of third openings may be formed in the pixel electrode and the storage electrode forming the storage capacitor via the first insulating layer. I have.

In the streamlined process, the step of forming the semiconductor layer into an island shape is performed simultaneously with the formation of the source / drain electrodes, and the step of forming an opening in the transparent insulating layer and exposing the drain electrode is performed simultaneously. Since the terminal electrodes of the lines and the signal lines are exposed, a step of exposing the terminal electrodes of the scanning lines before forming the source / drain electrodes is unnecessary. However, as a result, the terminal electrodes of the scanning line and the signal line cannot be connected with an appropriate conductive material, and therefore, it is necessary to take measures against static electricity. On the other hand, if a step of exposing the terminal electrodes of the scanning lines before the formation of the source / drain electrodes is added, a guard ring for preventing static electricity that short-circuits the signal lines with the scanning lines simultaneously with the formation of the signal lines is added. It should be added that formation is extremely easy.

[Brief description of the drawings]

FIG. 1 is a plan view of an active substrate according to a first embodiment.

FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG.

FIG. 3 is a plan view of an active substrate according to a second embodiment.

FIG. 4 is a sectional view taken along line A-A ′ of FIG. 3;

FIG. 5 is a plan view of an active substrate according to the third and fifth embodiments.

FIG. 6 is a plan view and a cross-sectional view of a terminal electrode of an active substrate according to (Embodiment 3).

FIG. 7 is a sectional view taken along the line A-A ′ in FIG. 5;

FIG. 8 is a plan view of an active substrate according to the fourth and sixth embodiments.

9 is a sectional view taken along the line A-A 'of FIG.

FIG. 10 is a plan view and a sectional view of a terminal electrode of an active substrate according to the fifth and sixth embodiments.

FIG. 11 is an equivalent circuit diagram of an active liquid crystal image display device.

FIG. 12 is a plan view of one substrate constituting a liquid crystal image display device in a unit pixel;

13 is a sectional view taken along the line A-A 'in FIG.

FIG. 14 is a plan view of one of the substrates constituting the liquid crystal image display device of the prior application example in a unit picture element;

15 is a sectional view taken along the line A-A 'in FIG.

[Explanation of symbols]

Reference Signs List 1 thin film transistor 2 liquid crystal cell 3 scanning line (gate) 4 signal line (source) 5 counter electrode 6 storage capacitor 7 drain electrode 8, 8 ', 8 "picture element electrode 9, 10 glass substrate (transparent insulating substrate) 11 liquid crystal 12 semiconductor Layer 13 Gate (first) insulating layer 14 Transparent conductive layer (ITO) 15, 15 'Negative photosensitive resin 16, 16' Ultraviolet light 20, (first) opening in drain electrode 21 Transparent insulating layer 22 Drain Formed on the transparent insulating layer on the electrode (second
Opening 23 of the pixel electrode and the drain electrode 24 opening of the first insulating layer from which the terminal electrode of the scanning line is exposed 30 storage capacitor line 31 storage electrode 32, 39 ) Openings 33, 40 (Second) opening formed in transparent insulating layer on storage electrode 35 Terminal electrode (scanning line side) 36 Terminal electrode (signal line side) 37, 38 Transparent insulating layer on terminal electrode (Second) opening 41 formed in the first layer 41 first amorphous silicon layer 42 second insulating layer 43 second amorphous silicon layer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G02F 1/136 G02F 1/1343

Claims (12)

(57) [Claims] A unit picture element having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface and at least one transparent conductive picture element electrode connected to a drain electrode of the thin film transistor is provided. A liquid crystal image display device in which liquid crystal is filled between a first transparent insulating substrate arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface is provided. In manufacturing, the pixel electrode is formed by a thin film transistor having a thin film layer made of a light blocking material on one main surface of a first transparent insulating substrate, a scanning line including a gate electrode of the thin film transistor, and a source electrode of the thin film transistor. Does not overlap with signal lines and gate electrodes including
Forming a drain electrode having an opening in a region ; forming a transparent conductive layer on the first transparent insulating substrate; applying a negative photosensitive resin on the transparent conductive layer; Exposing the photosensitive resin in a region to be a pixel electrode by irradiating light from above the other main surface of the substrate, and using the photosensitive resin selectively left after the development of the photosensitive resin as a mask to expose the pixel electrode A method of manufacturing a selectively formed liquid crystal image display device. 2. A unit picture element having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface and at least one transparent conductive picture element electrode connected to a drain electrode of the thin film transistor. A liquid crystal image display device in which liquid crystal is filled between a first transparent insulating substrate arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface is provided. In manufacturing, the pixel electrode is formed by a thin film transistor having a thin film layer made of a light blocking material on one main surface of a first transparent insulating substrate, a scanning line including a gate electrode of the thin film transistor, and a source electrode of the thin film transistor. Does not overlap with signal lines and gate electrodes including
After forming a drain electrode having a first opening in the region, a transparent insulating layer is formed over the entire surface to flatten the surface, and a second layer is formed on the transparent insulating layer on the drain electrode of the thin film transistor.
Forming an opening, forming a transparent conductive layer on the transparent insulating layer, applying a negative photosensitive resin on the transparent conductive layer, and applying a negative photosensitive resin on the other main surface of the first transparent insulating substrate. A liquid crystal image display in which a photosensitive resin in a region to be a pixel electrode is exposed by irradiating light and a pixel electrode is selectively formed using the photosensitive resin selectively left after development of the photosensitive resin as a mask. Device manufacturing method. 3. A unit having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface, at least one transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and at least one storage capacitor. A liquid crystal image formed by filling a liquid crystal between a first transparent insulating substrate having picture elements arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. In manufacturing the display device, the pixel electrode is formed by a thin film transistor having a thin film layer made of a light-blocking material on one main surface of a first transparent insulating substrate, a scanning line including a gate electrode of the thin film transistor, and a storage capacitor. Line, a signal line including a source electrode of the thin film transistor, and a gate electrode.
A drain electrode having a first opening in a non-overlapping region and a third electrode in a region including on the storage capacitance line and not overlapping with the storage capacitance line .
After forming a storage electrode having an opening, a transparent insulating layer is formed on the entire surface and flattened. A second opening is formed in the transparent insulating layer on the drain electrode of the thin film transistor and the storage electrode, and the transparent electrode is formed. Forming a transparent conductive layer on the insulating layer; applying a negative photosensitive resin on the transparent conductive layer; irradiating light from above the other main surface of the first transparent insulating substrate to form a pixel electrode; A method for manufacturing a liquid crystal image display device, comprising exposing a photosensitive resin in a region to be formed and selectively forming a pixel electrode using the photosensitive resin selectively left after the development of the photosensitive resin as a mask. 4. A thin film transistor having a thin film layer made of a light-blocking material on one main surface, a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and a storage capacitor.
A first transparent insulating substrate in which unit picture elements having at least one each of the first and second units are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. When manufacturing a liquid crystal image display device in which liquid crystal is filled in between, a pixel electrode is formed by forming a thin film transistor having a thin film layer made of a light shielding material on one main surface of a first transparent insulating substrate; A scanning line including a gate electrode, a signal line including a source electrode of the thin film transistor, and a region not overlapping with the scanning line.
If the storage electrode with the third opening overlaps the gate electrode
After forming a drain electrode having a first opening in a region where there is not , a transparent insulating layer is formed over the entire surface and planarized, and a second opening is formed in the transparent insulating layer on the drain electrode and the storage electrode of the thin film transistor. Forming a transparent conductive layer on the transparent insulating layer, applying a negative photosensitive resin on the transparent conductive layer, and irradiating light from the other main surface of the first transparent insulating substrate. A method for manufacturing a liquid crystal image display device, wherein a photosensitive resin in a region to be a pixel electrode is exposed to light and a pixel electrode is selectively formed using the photosensitive resin selectively left after development of the photosensitive resin as a mask. . 5. A thin film transistor having a thin film layer made of a light-blocking material on one main surface, a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and a storage capacitor.
A first transparent insulating substrate in which unit picture elements having at least one each of the first and second units are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. In manufacturing a liquid crystal image display device in which liquid crystal is filled therebetween, the first transparent insulating substrate is formed by forming a scan line including a gate electrode of a thin film transistor on one main surface of the first transparent insulating substrate and accumulating the same. A step of forming a capacitor line; and a step of sequentially depositing at least one layer of a first insulating layer to be a gate insulating layer and a first semiconductor layer and a second insulating layer to be channels of a thin film transistor. Exposing the first semiconductor layer while selectively leaving the second insulating layer on the gate electrode; depositing the second semiconductor layer containing impurities on the entire surface; Applying the above metal layer; Signal lines and gate including a layer over the metal layer and the second and the first semiconductor layer and selectively removing the second insulating layer portions comprise a source electrode of the thin film transistor selectively left by
Overlap the storage capacitor line includes a drain electrode and the storage capacitor line having a first opening of the plurality in a region that does not overlap with the electrode
Forming a storage electrode having a plurality of third openings in a non- existent region, forming a transparent insulating layer over the entire surface and planarizing the transparent insulating layer, on a drain electrode, a storage electrode, and a terminal electrode of the thin film transistor. Forming a second opening in the transparent insulating layer, removing the first insulating layer on the terminal electrode of the scanning line to expose the terminal electrode, and forming a transparent conductive layer on the transparent insulating layer. Forming a layer; applying a negative photosensitive resin on the transparent conductive layer;
A light is irradiated from above the other main surface of the transparent insulating substrate to expose the photosensitive resin in a region to be a pixel electrode, and the photosensitive resin selectively left after the development of the photosensitive resin is used as a mask for painting. Selectively forming elementary electrodes. 6. A thin film transistor having a thin film layer made of a light-blocking material on one main surface, a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and a storage capacitor.
A first transparent insulating substrate in which unit picture elements having at least one each of the first and second units are arranged in a two-dimensional matrix, and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. In manufacturing a liquid crystal image display device in which liquid crystal is filled therebetween, the first transparent insulating substrate is formed by forming a scanning line including a gate electrode of a thin film transistor on one main surface of the first transparent insulating substrate. Forming a first insulating layer serving as at least one or more gate insulating layers, a first semiconductor layer serving as a channel of the thin film transistor, and a second insulating layer sequentially over the entire surface; Selectively leaving the upper second insulating layer
Exposing a second semiconductor layer containing impurities on the entire surface, depositing one or more metal layers on the entire surface, exposing the one or more metal layers, A signal line and a gate including a source electrode of a thin film transistor partially including a second insulating layer selectively removed by selectively removing the second and first semiconductor layers;
A drain electrode having a plurality of first openings in a region not overlapping with the electrode, and a region including on the scanning line and not overlapping with the scanning line
In a step of forming a storage electrode having a third opening of the plurality, the steps of flattening is formed on the entire surface on the transparent insulating layer, on the accumulation and the drain electrode of the thin film transistor electrodes and transparent on the terminal electrode Forming a second opening in the insulating layer; removing the first insulating layer on the scanning line terminal electrode to expose the terminal electrode; and forming a transparent conductive layer on the transparent insulating layer. Forming a negative photosensitive resin on the transparent conductive layer;
A light is irradiated from above the other main surface of the transparent insulating substrate to expose the photosensitive resin in a region to be a pixel electrode, and the photosensitive resin selectively left after the development of the photosensitive resin is used as a mask for painting. Selectively forming elementary electrodes. 7. A unit picture element having at least one thin film transistor having a thin film layer made of a light-blocking material on one principal surface and at least one transparent conductive picture element electrode connected to a drain electrode of the thin film transistor. In a liquid crystal image display device, a liquid crystal is filled between a first transparent insulating substrate arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. A scanning line including a gate electrode of the thin film transistor for interconnecting the unit picture elements, a signal line including a source electrode of the thin film transistor, and a drain electrode are formed of a thin film layer made of a light blocking material; and the drain electrode is a gate. First in the area that does not overlap with the electrode
An opening for exposing a gate insulating layer formed on the transparent insulating substrate is provided, and the transparent electrode which becomes the picture element electrode through a photo-etching step by exposure from the back surface over the drain electrode to the gate insulating layer. A liquid crystal image display device provided with a conductive layer. 8. A unit picture element having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface and at least one transparent conductive picture element electrode connected to a drain electrode of the thin film transistor. In a liquid crystal image display device, a liquid crystal is filled between a first transparent insulating substrate arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. A scanning line including a gate electrode of the thin film transistor for interconnecting the unit picture elements, a signal line including a source electrode of the thin film transistor, and a drain electrode are formed of a thin film layer made of a light blocking material; and the drain electrode is a gate. First in the area that does not overlap with the electrode
A first opening for exposing a gate insulating layer formed on the transparent insulating substrate is provided; a transparent insulating layer is provided from above the drain electrode to the gate insulating layer; Providing a second opening in which a part of the drain electrode is exposed in the vicinity of the opening, and performing a photolithography process by exposing from the back surface over the transparent insulating layer and through the second opening to the drain electrode. A liquid crystal image display device provided with a transparent conductive layer serving as the picture element electrode through the following. 9. A unit having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface, at least one transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and at least one storage capacitor. A liquid crystal image formed by filling a liquid crystal between a first transparent insulating substrate having picture elements arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. in the display device, the scanning lines including the gate electrode of the thin film transistor interconnecting the units pixel, the storage capacitor line and the storage capacitor line signal line including a source electrode of the thin film transistor including the storage electrode and the drain electrode and the light is formed by a thin film layer made of blocking material, the drain electrode is also <br/> storage electrode in a region not overlapping with the gate electrode is first in the region which does not overlap with the storage capacitor line A plurality of gate insulating layer formed on a transparent insulation substrate is exposed
A first and a third opening are provided; a transparent insulating layer is provided from above the drain electrode to the gate insulating layer; and a part of the drain electrode in the vicinity of the first opening is provided in the transparent insulating layer. from the back toward the third and the second opening portion and is exposed to the storage electrode in the vicinity of the opening is provided, the drain electrode and the storage electrode through the upper and the second opening of the transparent insulating layer A liquid crystal image display device provided with a transparent conductive layer that becomes the picture element electrode through a photolithography process by exposure of the liquid crystal. 10. A unit having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface, at least one transparent conductive pixel electrode connected to a drain electrode of the thin film transistor, and at least one storage capacitor. A liquid crystal image formed by filling a liquid crystal between a first transparent insulating substrate having picture elements arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. in the display device, the signal line and the drain comprising a source electrode of the storage electrode and the thin film transistor including the scanning lines and the scanning lines including the gate electrode of the thin film transistor interconnecting the units picture element
The in-electrode is formed of a thin film layer made of a light-blocking material, the drain electrode is in a region not overlapping with the gate electrode, and the storage electrode is in a region not overlapping with the scanning line on the first transparent insulating substrate. The plurality of first layers exposing the gate insulating layer formed in
First and third openings are provided, a transparent insulating layer is provided from above the drain electrode to the gate insulating layer, and a portion of the drain electrode near the first opening is formed in the transparent insulating layer. 3 of the second opening portion is exposed to the storage electrode in the vicinity of the opening is provided, the exposure from the rear surface over to the drain electrode and the storage electrode through the upper and the second opening of the transparent insulating layer liquid crystal image display device through the photolithography process has a transparent conductive layer serving as the pixel electrode by. 11. A unit having at least one each of a thin film transistor having a thin film layer made of a light-blocking material on one main surface, a transparent conductive picture element electrode connected to a drain electrode of the thin film transistor, and a storage capacitor. A liquid crystal image formed by filling a liquid crystal between a first transparent insulating substrate having picture elements arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. in the display device, the scanning lines including the gate electrode of the thin film transistor interconnecting the units pixel, the storage capacitor line and the storage capacitor line signal line including a source electrode of the thin film transistor including the storage electrode and the drain electrode and the light in formed by a thin film layer made of blocking material, the drain electrode is also <br/> storage electrode in a region not overlapping the gate electrode does not overlap the storage capacitor line region First plurality of first transparent insulating first transparent insulating substrate and formed a gate insulating layer on the substrate is exposed and the third opening is provided, the transparent toward the gate insulating layer over said drain electrode the insulating layer is provided, the transparent insulating layer of said second opening portion and is exposed to the storage electrode in the vicinity of the part and the third opening of the drain electrode in the vicinity of the first opening A liquid crystal image display provided with a transparent conductive layer serving as the picture element electrode through a photographic etching process by exposure from the back surface to the drain electrode and the storage electrode through the second opening on the transparent insulating layer and the second opening apparatus. 12. A unit having at least one thin film transistor having a thin film layer made of a light-blocking material on one main surface, at least one transparent conductive pixel electrode connected to a drain electrode of the thin film transistor, and at least one storage capacitor. A liquid crystal image formed by filling a liquid crystal between a first transparent insulating substrate having picture elements arranged in a two-dimensional matrix and a second transparent insulating substrate having at least a transparent insulating layer formed on one main surface. in the display device, the signal line and the de including the source electrode of the storage electrode and the thin film transistor including the scanning lines and the scanning lines line including a gate electrode of the thin film transistor interconnecting the units picture element
And a drain electrode are formed by a thin film layer made of a light blocking material, the drain electrode or a region which does not overlap with the gate electrode <br/> storage electrode on the first transparent insulating substrate in a region non-overlapping with the scanning line Providing a plurality of first and third openings that expose the gate insulating layer formed on the first transparent insulating substrate, and providing a transparent insulating layer from above the drain electrode to the gate insulating layer; said storage electrode in the vicinity of the transparent insulating layer portion and the third opening of the drain electrode in the vicinity of the first opening one
And a second opening through which the pixel electrode is exposed. The pixel electrode is formed through a photo-etching process by exposure from the back surface to the drain electrode and the storage electrode through the second opening on the transparent insulating layer and the second opening. Liquid crystal image display device provided with a transparent conductive layer.