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JP3105355B2 - Ceramic circuit board and semiconductor device - Google Patents

Ceramic circuit board and semiconductor device

Info

Publication number
JP3105355B2
JP3105355B2 JP04176222A JP17622292A JP3105355B2 JP 3105355 B2 JP3105355 B2 JP 3105355B2 JP 04176222 A JP04176222 A JP 04176222A JP 17622292 A JP17622292 A JP 17622292A JP 3105355 B2 JP3105355 B2 JP 3105355B2
Authority
JP
Japan
Prior art keywords
silver powder
thick film
palladium
conductor
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP04176222A
Other languages
Japanese (ja)
Other versions
JPH05343561A (en
Inventor
力也 上村
義高 永山
幸喜 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Denso Corp
Original Assignee
Sumitomo Metal Mining Co Ltd
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd, Denso Corp filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP04176222A priority Critical patent/JP3105355B2/en
Publication of JPH05343561A publication Critical patent/JPH05343561A/en
Application granted granted Critical
Publication of JP3105355B2 publication Critical patent/JP3105355B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Powder Metallurgy (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は，ボンディングワイヤの
接続性及び信頼性に優れ，かつ小型化された，セラミッ
ク回路基板及び半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board and a semiconductor device which are excellent in the connectivity and reliability of bonding wires and are miniaturized.

【０００２】[0002]

【従来技術】従来，例えば図９に示すごとく，半導体装
置８に使用されるセラミック回路基板７は，セラミック
基板７０と，その上に形成されボンディングワイヤ３を
電気的に接続するための厚膜導体７１と，半導体素子４
を搭載するための配線導体膜７２とを有する。また，半
導体装置８は，セラミック回路基板７とハウジング８３
とからなる。2. Description of the Related Art Conventionally, as shown in FIG. 9, for example, a ceramic circuit board 7 used for a semiconductor device 8 is a thick film conductor for electrically connecting a ceramic substrate 70 and a bonding wire 3 formed thereon. 71 and the semiconductor element 4
And a wiring conductor film 72 for mounting the same. The semiconductor device 8 includes a ceramic circuit board 7 and a housing 83.
Consists of

【０００３】上記厚膜導体７１は，金属粒子とガラス粉
末と有機バインダーを混合した導体ペーストを印刷し，
焼成することにより形成されたものである。上記金属粒
子９０としては，図１０に示すごとく，例えば銀粉９１
とパラジウム粉９２とを混合したものが一般に用いられ
ている。The thick film conductor 71 is formed by printing a conductor paste obtained by mixing metal particles, glass powder and an organic binder,
It is formed by firing. As the metal particles 90, for example, as shown in FIG.
And a mixture of palladium powder 92 is generally used.

【０００４】一方，上記半導体素子４を厚膜導体７１と
電気的に接続するに当たっては，ボンディングワイヤ３
を超音波により圧接接合する超音波ボンディング法が用
いられている。該超音波ボンディング法においては，ボ
ンディングワイヤ３の接続性を向上させるために，例え
ばエッチングにより上記厚膜導体７１の表面ガラス層を
除去する方法が提案されている（例えば，特開平２−５
２４４３号公報）。On the other hand, when electrically connecting the semiconductor element 4 to the thick film conductor 71, the bonding wire 3
The ultrasonic bonding method of press-bonding by ultrasonic waves is used. In the ultrasonic bonding method, a method of removing the surface glass layer of the thick film conductor 71 by, for example, etching to improve the connectivity of the bonding wire 3 has been proposed (for example, Japanese Patent Laid-Open No. 2-5).
2443).

【０００５】[0005]

【解決しようとする課題】しかしながら，上記従来技術
には，次の問題点がある。即ち，上記厚膜導体７１を形
成するにあたり，前記焼成の初期段階（例えば焼成温度
が７００℃前後の低温時）においては，比較的低融点の
銀粒子９１同士の焼結を生じる。そのため，焼成される
厚膜導体の組成が不均一になる。また，銀粉が微小粒子
化したり，蒸発する場合を生じる。However, the above prior art has the following problems. That is, in forming the thick film conductor 71, in the initial stage of the firing (for example, at a low firing temperature of about 700 ° C.), sintering of the silver particles 91 having a relatively low melting point occurs. Therefore, the composition of the thick film conductor to be fired becomes non-uniform. In addition, the silver powder may become fine particles or evaporate.

【０００６】一方，８００℃以上の高温時には，銀粉と
パラジウムとの拡散が不均一に進行する。そのため，図
１１に示すごとく，焼成後における合金粒子９３には，
多数のポアー（気孔）９３０を生じる場合がある。その
結果，上記厚膜導体７１においては，被膜表面が凹凸状
態になる。それ故，かかる厚膜導体７１に対してボンデ
ィングワイヤ３を直接接続しても，充分な接合力が得ら
れず，著しく半導体装置８の信頼性が失われることにな
る。On the other hand, at a high temperature of 800 ° C. or more, diffusion of silver powder and palladium proceeds unevenly. Therefore, as shown in FIG.
A number of pores 930 may be created. As a result, in the thick film conductor 71, the coating surface becomes uneven. Therefore, even if the bonding wire 3 is directly connected to the thick film conductor 71, a sufficient bonding force cannot be obtained, and the reliability of the semiconductor device 8 is significantly reduced.

【０００７】また，上記表面ガラスを除去する方法にお
いては，厚膜導体に気孔が多数存在するため，ボンディ
ングワイヤの接続性が充分でない。そこで，かかる問題
点を解消すべく，図９に示すごとく，上記厚膜導体７１
上に金属パッド８９を接合し，該金属パッド８９上にボ
ンディングワイヤ３を接合している。In the above method for removing the surface glass, the connectivity of the bonding wires is not sufficient because there are many pores in the thick film conductor. In order to solve such a problem, as shown in FIG.
A metal pad 89 is bonded thereon, and a bonding wire 3 is bonded on the metal pad 89.

【０００８】しかしながら，上記従来の半導体装置８
は，上記金属パッド８９を用いているため，セラミック
回路基板７及び装置全体が大型化し，コスト高となる。
本発明は，かかる従来の問題点に鑑みてなされたもの
で，ボンディングワイヤの接続性及び信頼性に優れ，か
つ小型化されて安価な，セラミック回路基板及び半導体
装置を提供しようとするものである。However, the above-described conventional semiconductor device 8
Since the metal pad 89 is used, the size of the ceramic circuit board 7 and the entire device is increased, and the cost is increased.
The present invention has been made in view of such conventional problems, and has as its object to provide a ceramic circuit board and a semiconductor device which are excellent in the connectivity and reliability of a bonding wire, and are small and inexpensive. .

【０００９】[0009]

【課題の解決手段】本発明は，セラミック基板と，該セ
ラミック基板上に形成されボンディングワイヤを電気的
に接続するための厚膜導体と，半導体素子を搭載するた
めの配線導体膜とを有するセラミック回路基板におい
て，上記ボンディングワイヤを接続するための厚膜導体
は，銀粉の表面にパラジウムをコーティングしてなるパ
ラジウム被覆銀粉を焼成してなり，かつ，上記銀粉は
０．１〜２μｍの平均粒径を有し，また上記パラジウム
量は銀粉に対して５〜１００％（重量比）とされている
ことを特徴とするセラミック回路基板にある。The present invention provides a ceramic having a ceramic substrate, a thick film conductor formed on the ceramic substrate for electrically connecting a bonding wire, and a wiring conductor film for mounting a semiconductor element. In the circuit board, the thick-film conductor for connecting the bonding wire is formed by firing palladium-coated silver powder obtained by coating silver powder on the surface of palladium, and the silver powder has an average particle size of 0.1 to 2 μm. And the amount of palladium is 5 to 100% (weight ratio) with respect to silver powder.

【００１０】本発明において最も注目すべきことは，厚
膜導体は銀粉の表面にパラジウムをコーテイングしてな
るパラジウム被覆銀粉を用い，該銀粉は０．１〜２μｍ
の平均粒径を有し，上記パラジウム量は銀粉１００％に
対して５〜１００％（重量比，以下同じ）であることに
ある。上記パラジウム被覆銀粉は，例えば実施例に示す
方法により得られる。It is most remarkable in the present invention that the thick film conductor uses palladium-coated silver powder obtained by coating palladium on the surface of silver powder, and the silver powder has a thickness of 0.1 to 2 μm.
And the amount of palladium is 5 to 100% (weight ratio, hereinafter the same) with respect to 100% of silver powder. The palladium-coated silver powder can be obtained, for example, by the method described in Examples.

【００１１】上記銀粉は，平均粒径が０．１〜２μｍの
ものを用いる。その理由は，導体ペーストが０．１μｍ
未満では，焼成時の収縮により，被膜に「ちぢれ」現象
を生じ易く，一方２μｍを越えると焼成後の膜厚が厚く
なり過ぎて経済的に不利となる。また，上記銀粉は，略
球形状であることが好ましい。その理由は，比表面積を
出来るだけ小さくして，厚膜導体を形成するための導体
ペースト中のビヒクル吸着量を減らし導電性物質，例え
ば銀粉の含有率を高めるためである。The silver powder having an average particle size of 0.1 to 2 μm is used. The reason is that the conductor paste is 0.1 μm
When the thickness is less than 2 μm, the film tends to “shrink” due to shrinkage during firing. On the other hand, when the thickness exceeds 2 μm, the thickness after firing becomes too large, which is economically disadvantageous. Preferably, the silver powder has a substantially spherical shape. The reason for this is to reduce the specific surface area as much as possible, reduce the amount of vehicle adsorbed in the conductor paste for forming a thick film conductor, and increase the content of a conductive substance, for example, silver powder.

【００１２】これにより，緻密な焼成膜が得られる。ま
た，上記パラジウムは，銀粉に対して重量比で５〜１０
０％を用いてある。５％未満では銀粉表面がパラジウム
で完全にコーティングされない場合があり，一方１００
％を越えると厚膜導体の焼成時の焼成温度が高くなり過
ぎ，銀粒子の焼結が不充分となり，気孔が残存し易くな
る（図１１参照）。そのため，厚膜導体のボンディング
ワイヤ接続性が低下することになる。As a result, a dense fired film can be obtained. The palladium is used in a weight ratio of 5 to 10 with respect to silver powder.
0% is used. If it is less than 5%, the silver powder surface may not be completely coated with palladium.
%, The firing temperature during firing of the thick film conductor becomes too high, the sintering of silver particles becomes insufficient, and pores tend to remain (see FIG. 11). Therefore, the bonding wire connectivity of the thick film conductor is reduced.

【００１３】上記パラジウム被覆銀粉は，例えばエチル
セルロースのターピネオール溶液をビヒクルとして用
い，導体ペーストにする。そして，該導体ペーストを，
セラミック基板上に，例えばスクリーン印刷によりパタ
ーンを形成する。その後，例えばピーク温度が約８５０
℃の比較的低温のベルト炉内で焼成する。これにより，
厚膜導体が得られる。上記厚膜導体をセラミック基板上
に形成するに当たり，密着力を向上させるために，厚膜
導体を形成するための導体ペースト中にガラス粉末，無
機酸化物粉末を若干含有させることが好ましい。The palladium-coated silver powder is made into a conductor paste using, for example, a terpineol solution of ethyl cellulose as a vehicle. Then, the conductor paste is
A pattern is formed on the ceramic substrate by, for example, screen printing. Then, for example, when the peak temperature is about 850
Firing in a belt furnace at a relatively low temperature of ° C. This gives
A thick film conductor is obtained. In forming the thick-film conductor on a ceramic substrate, it is preferable to slightly contain glass powder and inorganic oxide powder in a conductor paste for forming the thick-film conductor in order to improve adhesion.

【００１４】一方，実施例３に示すごとく，配線導体膜
等上にボンディングワイヤを電気的に接続するための厚
膜導体を形成する場合には，上記ガラス粉末，無機酸化
物粉末を含有させる必要はない。焼成時において，金属
同士の融着により密着力が向上するからである。また，
上記セラミック回路基板の配線導体膜上には，半導体素
子を搭載し，この半導体素子あるいは他の端子と厚膜導
体との間をボンディングワイヤにより電気的に接続した
半導体装置を構成する。On the other hand, as shown in Embodiment 3, when forming a thick film conductor for electrically connecting a bonding wire on a wiring conductor film or the like, it is necessary to contain the above glass powder and inorganic oxide powder. There is no. This is because at the time of firing, the adhesion between the metals is improved by the fusion of the metals. Also,
A semiconductor device is formed by mounting a semiconductor element on the wiring conductor film of the ceramic circuit board and electrically connecting the semiconductor element or another terminal to the thick film conductor by a bonding wire.

【００１５】上記ボンディングワイヤを接続する方法と
しては，例えば超音波ボンディング法，熱圧着法，サー
モソニックボンディング法を用いる。上記ボンディング
ワイヤとしては，例えばアルミニウム，金などのワイヤ
（細線）を用いる。そして，半導体素子としての半導体
チップを，配線導体膜上に搭載し，ボンディングワイヤ
を介して上記厚膜導体と電気的に接続する。As a method for connecting the bonding wires, for example, an ultrasonic bonding method, a thermocompression bonding method, or a thermosonic bonding method is used. As the bonding wire, for example, a wire (thin wire) such as aluminum or gold is used. Then, a semiconductor chip as a semiconductor element is mounted on the wiring conductor film, and is electrically connected to the thick film conductor via a bonding wire.

【００１６】[0016]

【作用及び効果】本発明のセラミック回路基板において
は，厚膜導体はパラジウム被覆銀粉を焼成することによ
り形成される。そして，パラジウム粉は，比較的高融点
の金属（融点１５５２℃）であり，銀粉（融点９６０．
５℃）の表面をコーティングしているものである。その
ため，厚膜導体形成用の上記焼成時，初期の段階におい
ては，銀粉粒子同士の焼結は阻害され，銀粉とパラジウ
ムとの拡散が均一に起こり，まず銀とパラジウムが合金
化する。さらに，焼成時の高温時において，銀−パラジ
ウム合金は，その融着部を介して互いに焼結し，均一に
合金化した粒子からなる厚膜導体が得られる（図２
（Ｂ）参照）。In the ceramic circuit board of the present invention, the thick film conductor is formed by firing palladium-coated silver powder. Palladium powder is a metal having a relatively high melting point (melting point: 1552 ° C.) and silver powder (melting point: 960.
(5 ° C.). Therefore, in the above-described firing for forming the thick-film conductor, in the initial stage, sintering of silver powder particles is inhibited, diffusion of silver powder and palladium occurs uniformly, and silver and palladium are first alloyed. Further, at a high temperature during firing, the silver-palladium alloys are sintered together through their fusion parts to obtain a thick-film conductor composed of uniformly alloyed particles (FIG. 2).
(B)).

【００１７】その結果，合金粒子にはポアー（気孔）を
生じにくく，緻密な厚膜導体が形成される。また，その
ため，厚膜導体の表面には，凹凸を生じない。したがっ
て，厚膜導体とボンディングワイヤとの結合力が向上
し，その接続性に優れることになる。また，銀粉はパラ
ジウムによりコーティングされているため，銀粉の部分
的な分解，蒸発を防止できる。As a result, pores are unlikely to be formed in the alloy particles, and a dense thick film conductor is formed. Therefore, no irregularities occur on the surface of the thick film conductor. Therefore, the bonding force between the thick film conductor and the bonding wire is improved, and the connectivity is excellent. Further, since the silver powder is coated with palladium, partial decomposition and evaporation of the silver powder can be prevented.

【００１８】一方，上記セラミック回路基板の配線導体
膜上に半導体素子を搭載し，ボンディングワイヤにより
電気的に接続してなる半導体装置においては，従来例の
ごとく，厚膜導体上に金属パッド（図９の符号８９）を
接合する必要がない。そのため，セラミック回路基板及
び半導体装置が小型化し，安価になる。それ故，本発明
によれば，ボンディングワイヤの接続性及び信頼性に優
れ，かつ小型化されて安価な，セラミック回路基板及び
半導体装置を提供することができる。On the other hand, in a semiconductor device in which a semiconductor element is mounted on a wiring conductor film of the ceramic circuit board and electrically connected by bonding wires, a metal pad (see FIG. 9 (89) is not required to be joined. Therefore, the size of the ceramic circuit board and the size of the semiconductor device are reduced and the cost is reduced. Therefore, according to the present invention, it is possible to provide a ceramic circuit board and a semiconductor device which are excellent in the connectivity and reliability of the bonding wires, and are small and inexpensive.

【００１９】[0019]

【実施例】実施例１ 本発明の実施例にかかるセラミック回路基板につき，図
１〜図３を用いて説明する。本例のセラミック回路基板
は，図１に示すごとく，セラミック基板２１と，この上
に形成されボンディングワイヤ３を電気的に接続するた
めの厚膜導体１と，半導体素子４を搭載するための配線
導体膜５とを有する。上記ボンディングワイヤを電気的
に接続するための厚膜導体１は，図２，図３に示すごと
く，銀粉１１の表面にパラジウム１２をコーティングし
てなるパラジウム被覆銀粉１０をセラミック基板２１上
に印刷塗布し，焼成することにより形成してある。Embodiment 1 A ceramic circuit board according to an embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 1, the ceramic circuit board of this embodiment has a ceramic substrate 21, a thick film conductor 1 formed thereon for electrically connecting a bonding wire 3, and a wiring for mounting a semiconductor element 4. And a conductor film 5. As shown in FIGS. 2 and 3, the thick film conductor 1 for electrically connecting the bonding wires is formed by printing and coating a palladium-coated silver powder 10 obtained by coating a surface of a silver powder 11 with palladium 12 on a ceramic substrate 21. It is formed by firing.

【００２０】上記銀粉１１は，平均粒径が０．１〜２μ
ｍのものを用いる。上記パラジウム１２は，銀粉１１が
１００％に対して，５〜１００％コーティングしてあ
る。上記パラジウム被覆銀粉１０は，例えば次の方法に
より得られる。即ち，まず純水１リットル中に，８０ｇ
の銀粉１１に相当するクロロジアミン銀を溶解する。次
に，この溶液を約５０℃に加温し，３７％のホルマリン
溶液１２０ｇを添加する。これにより，銀粒子を析出さ
せる。The silver powder 11 has an average particle size of 0.1 to 2 μm.
m. The palladium 12 is coated with 5 to 100% of silver powder 11 with respect to 100%. The palladium-coated silver powder 10 is obtained, for example, by the following method. That is, 80 g in 1 liter of pure water
Dissolve silver chlorodiamine corresponding to the silver powder 11 of FIG. Next, this solution is heated to about 50 ° C., and 120 g of a 37% formalin solution is added. Thereby, silver particles are precipitated.

【００２１】次いで，この銀粒子を保有する反応液に，
二酸化チオ尿素１０ｇと純水を加える。そして，全体の
液量を３リットルにした後，５０℃に加温し，このスラ
リー溶液に約５０℃に加温されたジクロロアミンパラジ
ウムの溶液を適量添加する。次いで，約１０分間溶液を
攪拌した後，沈澱物を得る。そして，この沈澱物を濾過
し乾燥して，図３に示すごときパラジウム被覆銀粉１０
を得る。Next, the reaction solution containing the silver particles is
10 g of thiourea dioxide and pure water are added. After the total liquid volume is reduced to 3 liters, the mixture is heated to 50 ° C., and an appropriate amount of a dichloroamine palladium solution heated to about 50 ° C. is added to the slurry solution. Then, after stirring the solution for about 10 minutes, a precipitate is obtained. The precipitate is filtered and dried, and the palladium-coated silver powder 10 as shown in FIG.
Get.

【００２２】上記銀粒子は，平均粒径が約１μｍの球形
状に形成されている。これにより，銀粉１１の比表面積
が小さくなり，後述の導体ペースト中のビヒクル吸着量
が減少して導電性物質である銀粉の含有率が高くなる。
上記パラジウム１２は，銀粉１１に対して，３０重量％
がコーティングしてある。The silver particles are formed in a spherical shape having an average particle size of about 1 μm. As a result, the specific surface area of the silver powder 11 is reduced, the amount of vehicle adsorption in the conductor paste described below is reduced, and the content of silver powder, which is a conductive substance, is increased.
The palladium 12 is 30% by weight with respect to the silver powder 11.
Is coated.

【００２３】ここで，上記パラジウム被覆銀粉１０を用
いて厚膜導体１を形成する方法につき述べる。まず，パ
ラジウム被覆銀粉１０にヒビクルとしてエチルセルロー
スのターピネオール溶液を混合して，導体ペーストを作
製する。次に，該導体ペーストをセラミック基板２１上
に，スクリーン印刷により塗布する。そして，該セラミ
ック基板を焼成する。Here, a method of forming the thick film conductor 1 using the palladium-coated silver powder 10 will be described. First, a conductive paste is prepared by mixing a terpineol solution of ethyl cellulose as a vehicle with the palladium-coated silver powder 10. Next, the conductive paste is applied on the ceramic substrate 21 by screen printing. Then, the ceramic substrate is fired.

【００２４】上記セラミック基板２１上に，導体ペース
トをスクリーン印刷により所定のパターンを形成する。
その後，上記セラミック基板２１をピーク温度が約８５
０℃のベルト炉内で焼成して，厚膜導体１を得る。A predetermined pattern is formed on the ceramic substrate 21 by screen printing a conductive paste.
Thereafter, the ceramic substrate 21 is heated to a peak temperature of about 85.
The thick film conductor 1 is obtained by firing in a belt furnace at 0 ° C.

【００２５】該セラミック回路基板２には，図１に示す
ごとく，厚膜導体１のほかに，半導体素子４を搭載する
ための配線導体膜５を形成する。該配線導体膜は，金，
銀，パラジウム，白金等の組成物からなる導体ペースト
を焼成してなる。次に，同図に示すごとく，上記配線導
体膜５上に半導体素子４を，半田４１により接合し固定
する。また，半導体素子４は，ボンディングワイヤ３を
介して，上記厚膜導体１に電気的に接続する。On the ceramic circuit board 2, as shown in FIG. 1, in addition to the thick film conductor 1, a wiring conductor film 5 for mounting the semiconductor element 4 is formed. The wiring conductor film is made of gold,
It is obtained by firing a conductive paste made of a composition such as silver, palladium, and platinum. Next, as shown in the figure, the semiconductor element 4 is joined and fixed on the wiring conductor film 5 by the solder 41. Further, the semiconductor element 4 is electrically connected to the thick film conductor 1 via the bonding wire 3.

【００２６】上記ボンディングワイヤ３としては，直径
が約３００μｍのアルミニウムワイヤを用いる。また，
その接続方法としては，超音波ボンディング法を用い
る。その他は，従来と同様である。As the bonding wire 3, an aluminum wire having a diameter of about 300 μm is used. Also,
As the connection method, an ultrasonic bonding method is used. Others are the same as the conventional one.

【００２７】次に，作用効果につき説明する。本例のセ
ラミック回路基板２においては，図２に示すごとく，厚
膜導体１はパラジウム被覆銀粉１０を焼成して形成して
ある。即ち，比較的高融点の金属であるパラジウム１２
（融点１５５２℃）が銀粉１１（融点９６０．５℃）の
表面をコーティングしてある。Next, the function and effect will be described. In the ceramic circuit board 2 of this embodiment, as shown in FIG. 2, the thick film conductor 1 is formed by firing a palladium-coated silver powder 10. That is, palladium 12 which is a relatively high melting point metal
(Melting point 1552 ° C.) is coated on the surface of silver powder 11 (melting point 960.5 ° C.).

【００２８】そのため，銀粉１１の粒子同士の焼結は阻
害され，粒子内における銀粉１１とパラジウム１２との
拡散が均一に起こる。そのため，パラジウム被覆銀粉１
０は，高温において，図２（Ｂ）に示すごとく，融着部
１３１を介して均一に合金化した粒子が焼結する。その
結果，合金粒子１３にはポアー（気孔）を生じることが
少なく，緻密な厚膜導体１が形成される。そのため，該
厚膜導体１の表面には，凹凸を生じにくい。Therefore, the sintering of the particles of the silver powder 11 is inhibited, and the diffusion of the silver powder 11 and the palladium 12 within the particles occurs uniformly. Therefore, palladium-coated silver powder 1
In the case of No. 0, at a high temperature, as shown in FIG. As a result, pores are less likely to occur in the alloy particles 13 and the dense thick film conductor 1 is formed. Therefore, the surface of the thick film conductor 1 is unlikely to have irregularities.

【００２９】したがって，厚膜導体１とボンディングワ
イヤ３との結合力が向上し，ボンディングワイヤ３の接
続性に優れることになる。また，銀粉１１は上述のごと
く，パラジウム１２によりコーティングされているため
銀粉１１の部分的な分解，蒸発を防止することができ
る。また，銀粉１１に対しパラジウム１１の使用量が従
来よりも少なくできる。そのため，低温焼成が可能とな
る。Therefore, the bonding force between the thick film conductor 1 and the bonding wire 3 is improved, and the connectivity of the bonding wire 3 is improved. Further, as described above, since the silver powder 11 is coated with the palladium 12, partial decomposition and evaporation of the silver powder 11 can be prevented. In addition, the amount of palladium 11 used for silver powder 11 can be reduced as compared with the conventional case. Therefore, low-temperature firing becomes possible.

【００３０】一方，上記半導体装置１Ａ（図４）におい
ては，従来例のごとく，厚膜導体１上に金属パッド（図
９の符号８９）を接合する必要がない。そのため，セラ
ミック回路基板２及び半導体装置１Ａが小型化し，安価
になる。On the other hand, in the semiconductor device 1A (FIG. 4), there is no need to bond a metal pad (reference numeral 89 in FIG. 9) on the thick film conductor 1 as in the conventional example. Therefore, the ceramic circuit board 2 and the semiconductor device 1A are reduced in size and cost.

【００３１】実施例２ 本例は，図４，図５に示すごとく，上記実施例１に示し
たセラミック回路基板２の配線導体膜５上に半導体素子
４を搭載し，両者をワイヤボンディングして，半導体装
置１Ａを構成し，その接続性及び信頼性を測定したもの
である。その他は，実施例１と同様である。半導体装置
１Ａは，図４に示すごとく，セラミック回路基板２と，
該セラミック回路基板２を囲むハウジング２２とよりな
る。Embodiment 2 In this embodiment, as shown in FIGS. 4 and 5, the semiconductor element 4 is mounted on the wiring conductor film 5 of the ceramic circuit board 2 shown in Embodiment 1 and both are wire-bonded. , A semiconductor device 1A, and its connectivity and reliability were measured. Others are the same as the first embodiment. As shown in FIG. 4, the semiconductor device 1A includes a ceramic circuit board 2,
The housing 22 surrounds the ceramic circuit board 2.

【００３２】セラミック回路基板２は，セラミック基板
２１と，この上に形成されボンディングワイヤ３を電気
的に接続するための厚膜導体１と，半導体素子４を搭載
するための配線導体膜５と，回路素子４０とを有する。
ここで，図５は，本発明装置におけるボンディングワイ
ヤ３の接続性及び信頼性と，厚膜導体の気孔率の測定結
果を示したグラフである。即ち，図５に示すごとく，本
発明の厚膜導体の気孔率は５％以下であった。これに対
し，比較例としての，従来のセラミック回路基板７（図
９参照）の厚膜導体７１は，気孔率が約２０％であっ
た。The ceramic circuit board 2 includes a ceramic substrate 21, a thick film conductor 1 formed thereon for electrically connecting the bonding wires 3, a wiring conductor film 5 for mounting the semiconductor element 4, and And a circuit element 40.
Here, FIG. 5 is a graph showing the measurement results of the connectivity and reliability of the bonding wire 3 and the porosity of the thick film conductor in the device of the present invention. That is, as shown in FIG. 5, the porosity of the thick film conductor of the present invention was 5% or less. In contrast, the thick film conductor 71 of the conventional ceramic circuit board 7 (see FIG. 9) as a comparative example had a porosity of about 20%.

【００３３】なお，この気孔率は，厚膜導体の全表面積
に対して，気孔の面積が占める割合を示したものであ
る。一方，本発明の厚膜導体１に対するボンディングワ
イヤ３の接続性及び信頼性は，図５に示すごとく，１０
０％であった。これに対し，比較例は約６０％であっ
た。ここに接続性，信頼性とは，ワイヤピール試験によ
る接合部ワイヤ剥離の有無を基準にして評価した値をい
う。図５より知られるごとく，本発明によれば，ボンデ
ィングワイヤの接続性及び信頼性に優れたセラミック回
路基板及び半導体装置を得ることができる。The porosity indicates the ratio of the area of the porosity to the total surface area of the thick film conductor. On the other hand, the connectivity and reliability of the bonding wire 3 with respect to the thick film conductor 1 of the present invention are as shown in FIG.
It was 0%. On the other hand, the comparative example was about 60%. Here, the connectivity and reliability refer to values evaluated based on the presence or absence of wire peeling at a joint in a wire peel test. As is known from FIG. 5, according to the present invention, it is possible to obtain a ceramic circuit board and a semiconductor device having excellent bonding wire connectivity and reliability.

【００３４】実施例３ 本例は，図６に示すごとく，上記実施例１における配線
導体膜５上に厚膜導体１を形成したものである。その他
は，実施例１と同様である。上記厚膜導体１は，図６に
示すごとく，ボンディングワイヤ３を電気的に接続する
ために最低限必要な部分のみに，比較的小さな面積を有
する。また，厚膜導体１は配線導体膜５上に形成してあ
る。そのため，上記厚膜導体１は，比較的容易に，かつ
安価に形成することができる。Embodiment 3 In this embodiment, as shown in FIG. 6, the thick film conductor 1 is formed on the wiring conductor film 5 in the first embodiment. Others are the same as the first embodiment. As shown in FIG. 6, the thick film conductor 1 has a relatively small area only at a minimum necessary portion for electrically connecting the bonding wire 3. The thick film conductor 1 is formed on the wiring conductor film 5. Therefore, the thick film conductor 1 can be formed relatively easily and inexpensively.

【００３５】本例は，実施例１と同様にワイヤボンディ
ング性に優れた，厚膜導体１を有するセラミック回路基
板２２を得ることができる。なお，本例においては，上
記厚膜導体１を形成するための導体ペースト中に，ガラ
ス粉末や無機酸化物を混入していない。その理由は，上
記厚膜導体１を配線導体膜５上に直接形成することによ
る。その他，実施例１と同様の効果を得ることができ
る。According to this embodiment, a ceramic circuit board 22 having a thick film conductor 1 having excellent wire bonding properties can be obtained as in the first embodiment. In this example, no glass powder or inorganic oxide is mixed in the conductor paste for forming the thick film conductor 1. The reason is that the thick film conductor 1 is formed directly on the wiring conductor film 5. In addition, the same effects as in the first embodiment can be obtained.

【００３６】実施例４ 本例は，図７に示すごとく，上記実施例１における配線
導体膜５と電気的に接続した厚膜導体１を基板上に直接
形成したものである。その他は，実施例１と同様であ
る。上記厚膜導体１は，図７に示すごとく，端部におい
て配線導体膜５と電気的に接続するための接続部１０１
を有する。また，厚膜導体１は，実施例１における厚膜
導体１よりも小さくしてある。そのため，上記厚膜導体
１は，比較的安価に形成することができる。また，上記
厚膜導体１は，上記接続部１０１を介して配線導体膜５
と電気的に接続した導通構造にしてある。その他，実施
例１と同様の効果を得ることができる。Embodiment 4 In this embodiment, as shown in FIG. 7, the thick film conductor 1 electrically connected to the wiring conductor film 5 in Embodiment 1 is directly formed on a substrate. Others are the same as the first embodiment. As shown in FIG. 7, the thick film conductor 1 has a connection portion 101 for electrically connecting to the wiring conductor film 5 at an end.
Having. The thick film conductor 1 is smaller than the thick film conductor 1 in the first embodiment. Therefore, the thick film conductor 1 can be formed relatively inexpensively. The thick film conductor 1 is connected to the wiring conductor film 5 through the connection portion 101.
It has a conductive structure electrically connected to. In addition, the same effects as in the first embodiment can be obtained.

【００３７】実施例５ 本例は，図８に示すごとく，上記実施例３における厚膜
導体１と配線導体膜５との間に，第２厚膜導体１６を形
成したものである。その他は，実施例３と同様である。
上記第２厚膜導体１６は，従来例に示した銀粉９１とパ
ラジウム粉９２（図１０参照）との混合物を用いて形成
したものである。Embodiment 5 In this embodiment, as shown in FIG. 8, a second thick film conductor 16 is formed between the thick film conductor 1 and the wiring conductor film 5 in the third embodiment. Others are the same as the third embodiment.
The second thick film conductor 16 is formed using a mixture of the silver powder 91 and the palladium powder 92 (see FIG. 10) shown in the conventional example.

【００３８】そのため，上記第２厚膜導体１６は，比較
的容易に，かつ安価に形成することができる。その結
果，上記厚膜導体１は，実施例３と同様にワイヤボンデ
ィング性に優れている。その他，実施例３と同様の効果
を得ることができる。Therefore, the second thick film conductor 16 can be formed relatively easily and at low cost. As a result, the thick film conductor 1 is excellent in wire bonding property as in the third embodiment. In addition, the same effects as in the third embodiment can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図１】実施例１にかかるセラミック回路基板の側面
図。FIG. 1 is a side view of a ceramic circuit board according to a first embodiment.

【図２】実施例１におけるパラジウム被覆銀粉及び合金
粒子を示す説明図。FIG. 2 is an explanatory view showing palladium-coated silver powder and alloy particles in Example 1.

【図３】実施例１におけるパラジウム被覆銀粉の拡大説
明図。FIG. 3 is an enlarged explanatory view of a palladium-coated silver powder in Example 1.

【図４】実施例２にかかる半導体装置の斜視図。FIG. 4 is a perspective view of a semiconductor device according to a second embodiment;

【図５】実施例２における，ボンディングワイヤの接続
性及び信頼性，厚膜導体の気孔率を示すグラフ。FIG. 5 is a graph showing the connectivity and reliability of a bonding wire and the porosity of a thick film conductor in Example 2.

【図６】実施例３にかかるセラミック回路基板の側面
図。FIG. 6 is a side view of the ceramic circuit board according to the third embodiment.

【図７】実施例４にかかるセラミック回路基板の側面
図。FIG. 7 is a side view of a ceramic circuit board according to a fourth embodiment.

【図８】実施例５にかかるセラミック回路基板の側面
図。FIG. 8 is a side view of a ceramic circuit board according to a fifth embodiment.

【図９】従来の半導体装置の斜視図。FIG. 9 is a perspective view of a conventional semiconductor device.

【図１０】従来の銀粉とパラジウム粉との混合物を示す
説明図。FIG. 10 is an explanatory view showing a conventional mixture of silver powder and palladium powder.

【図１１】従来の銀粉とパラジウム粉との混合物のポア
ー発生状態を示す説明図。FIG. 11 is an explanatory diagram showing a state of generation of pores in a conventional mixture of silver powder and palladium powder.

【符号の説明】 １．．．厚膜導体， １０．．．パラジウム被覆銀粉， １１．．．銀粉， １２．．．パラジウム， ２，２２，２３，２４．．．セラミック回路基板， ２１．．．セラミック基板， ３．．．ボンディングワイヤ， ４．．．半導体素子， ５．．．配線導体膜，[Explanation of Codes] . . 9. thick film conductor, . . 10. palladium-coated silver powder, . . Silver powder, 12. . . Palladium, 2,22,23,24. . . Ceramic circuit board, 21. . . 2. ceramic substrate; . . 3. bonding wire; . . Semiconductor device, 5. . . Wiring conductor film,

───────────────────────────────────────────────────── フロントページの続き (72)発明者 山田 幸喜 東京都青梅市末広町１丁目６番１号 住 友金属鉱山株式会社 電子事業本部内 (56)参考文献 特開 平５−243420（ＪＰ，Ａ) 特開 平２−52443（ＪＰ，Ａ) 特開 昭64−72589（ＪＰ，Ａ) 特開 平２−191332（ＪＰ，Ａ) 実開 平３−101520（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/12 H01L 21/60 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Koki Yamada 1-6-1, Suehirocho, Ome-shi, Tokyo Sumitomo Metal Mining Co., Ltd. Electronic business headquarters (56) References JP-A-5-243420 (JP, A) JP-A-2-52443 (JP, A) JP-A-64-72589 (JP, A) JP-A-2-191332 (JP, A) JP-A-3-101520 (JP, U) (58) Survey Field (Int.Cl. 7 , DB name) H01L 23/12 H01L 21/60

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 セラミック基板と，該セラミック基板上
に形成されボンディングワイヤを電気的に接続するため
の厚膜導体と，半導体素子を搭載するための配線導体膜
とを有するセラミック回路基板において， 上記ボンディングワイヤを接続するための厚膜導体は，
銀粉の表面にパラジウムをコーティングしてなるパラジ
ウム被覆銀粉を焼成してなり， かつ，上記銀粉は０．１〜２μｍの平均粒径を有し，ま
た上記パラジウム量は銀粉に対して５〜１００％（重量
比）とされていることを特徴とするセラミック回路基
板。1. A ceramic circuit board comprising: a ceramic substrate; a thick-film conductor formed on the ceramic substrate for electrically connecting bonding wires; and a wiring conductor film for mounting a semiconductor element. Thick film conductors for connecting bonding wires
Palladium-coated silver powder obtained by coating the surface of silver powder with palladium is fired, and the silver powder has an average particle size of 0.1 to 2 μm, and the amount of palladium is 5 to 100% based on the silver powder. (Weight ratio). 【請求項２】 請求項１に示したセラミック回路基板の
配線導体膜上に半導体素子を搭載してなることを特徴と
する半導体装置。2. A semiconductor device comprising a semiconductor element mounted on a wiring conductor film of the ceramic circuit board according to claim 1.
JP04176222A 1992-06-10 1992-06-10 Ceramic circuit board and semiconductor device Expired - Lifetime JP3105355B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04176222A JP3105355B2 (en) 1992-06-10 1992-06-10 Ceramic circuit board and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04176222A JP3105355B2 (en) 1992-06-10 1992-06-10 Ceramic circuit board and semiconductor device

Publications (2)

Publication Number Publication Date
JPH05343561A JPH05343561A (en) 1993-12-24
JP3105355B2 true JP3105355B2 (en) 2000-10-30

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Publication number Priority date Publication date Assignee Title
JP5075222B2 (en) 2010-05-11 2012-11-21 Ｔｄｋ株式会社 Electronic component and manufacturing method thereof

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