JP3036207B2 - Method for producing silicon nitride sintered body - Google Patents
Method for producing silicon nitride sintered bodyInfo
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- JP3036207B2 JP3036207B2 JP4029508A JP2950892A JP3036207B2 JP 3036207 B2 JP3036207 B2 JP 3036207B2 JP 4029508 A JP4029508 A JP 4029508A JP 2950892 A JP2950892 A JP 2950892A JP 3036207 B2 JP3036207 B2 JP 3036207B2
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Description
【0001】[0001]
【産業上の利用分野】本発明は窒化ケイ素焼結体の製造
方法に係る。The present invention relates to a method for producing a silicon nitride sintered body.
【0002】[0002]
【従来の技術】窒化ケイ素焼結体は窒化ケイ素粉末に焼
結助剤を添加し、成形及び焼結して作製される。焼結助
剤としてはY2 O3 ,MgO,Al2 O3 など各種の酸
化物が使用され、また提案されている。切削工具のコー
ティングされた母材としてではあるが、窒化ケイ素粉末
に焼結助剤として0.1〜10重量%のY2 O3 と0.
1〜10重量%のZrO2 とを添加した焼結体が特開昭
61−101482号公報に開示され、また窒化ケイ素
粉末に焼結助剤としてY2 O3 と、さらにZrO2 及び
SiO2 をそれぞれ添加することも従来知られている。2. Description of the Related Art A silicon nitride sintered body is produced by adding a sintering aid to silicon nitride powder, molding and sintering. Various oxides such as Y 2 O 3 , MgO, and Al 2 O 3 have been used as sintering aids and have been proposed. Albeit in a base material coated cutting tool, as a sintering aid to silicon nitride powder of 0.1 to 10 wt% Y 2 O 3 and 0.
Sintered body obtained by adding a 1 to 10 wt% of ZrO 2 is disclosed in JP-A-61-101482, also the Y 2 O 3 as a sintering aid to a silicon nitride powder, further ZrO 2 and SiO 2 Has also been conventionally known.
【0003】[0003]
【発明が解決しようとする課題】従来、窒化ケイ素焼結
体において、常圧焼結で、しかも1500℃から170
0℃の比較的低温度の焼結により、室温から1000℃
の範囲で1000MPa (空気中)を越え、さらには空気
中1400℃で600MPa を越える強度を発現した報告
は無い。高強度を得るためには、緻密で微細な焼結体組
織が必要であり、そのためには低温度で焼結する必要が
あったが、常圧では焼結しないためにHIP焼結法が用
いられている。Conventionally, in a silicon nitride sintered body, normal pressure sintering was carried out at a temperature of 1500 ° C. to 170 ° C.
Room temperature to 1000 ° C by sintering at a relatively low temperature of 0 ° C
There is no report that the strength exceeded 1000 MPa (in air) in the range of, and more than 600 MPa at 1400 ° C in air. In order to obtain high strength, a dense and fine sintered body structure was required. For that purpose, it was necessary to sinter at a low temperature. Have been.
【0004】そこで、本発明は、HIP焼結の必要がな
く、常圧焼結で、しかも1500〜1700℃の比較的
低温度で焼成して高温で高強度を発現する窒化ケイ素焼
結体を製造する方法を提供することを目的とする。Accordingly, the present invention provides a silicon nitride sintered body which does not require HIP sintering, sinters under normal pressure, and sinters at a relatively low temperature of 1500 to 1700 ° C. and exhibits high strength at a high temperature. It is intended to provide a method of manufacturing.
【0005】[0005]
【課題を解決するための手段】本発明によれば、焼結助
剤として各種酸化物系助剤と共に、ZrO2 とSiO 2
とをそれぞれ単独にではなく、ジルコンZrO2 ・Si
O2 (ZrSiO4 )という化合物の形で添加すること
によって、上記課題が解決される。ZrO2 とSiO2
とを単独粒子として添加すると、緻密化はするが、強度
は低下する。According to the present invention, a sintering aid is provided.
ZrO with various oxide auxiliary agentsTwoAnd SiO Two
And zircon ZrOTwo・ Si
OTwo(ZrSiOFour))
This solves the above problem. ZrOTwoAnd SiOTwo
When added as single particles, it densifies, but
Drops.
【0006】こうして本発明によれば、窒化ケイ素粉末
に、焼結助剤として少なくともZrO2 ・SiO2 と他
の酸化物系助剤を添加した均一混合粉末を成形し、該成
形体を1500℃〜1700℃の温度で焼結することを
特徴とする窒化ケイ素焼結体の製造方法が提供される。
出発原料としての窒化ケイ素粉末は平均粒径0.1〜
0.6μm、より好ましくは0.2〜0.4μmのもの
を使用するのがよい。出発原料の粒径が小さいことによ
り焼結時の駆動力が大きくなり、また出発原料の粒径が
大きくなると、焼結粒子の粒径が大きくなり、強度低下
の原因になるからである。また、純度は金属不純物総量
100ppm 以下のものがよい。不純物がこれより多くな
ると粒界ガラス相の軟化温度が低下し、高温における強
度が低下するからである。Thus, according to the present invention, a uniform mixed powder obtained by adding at least ZrO 2 · SiO 2 and other oxide-based auxiliaries as a sintering auxiliary to a silicon nitride powder is formed, and the formed body is heated to 1500 ° C. A method for producing a silicon nitride sintered body, characterized by sintering at a temperature of 11700 ° C.
Silicon nitride powder as a starting material has an average particle size of 0.1 to
It is good to use the thing of 0.6 μm, more preferably 0.2-0.4 μm. This is because the driving force at the time of sintering is increased due to the small particle diameter of the starting material, and the particle diameter of the sintered particle is increased when the particle diameter of the starting material is increased, which causes a reduction in strength. Further, the purity is preferably 100 ppm or less of the total amount of metal impurities. This is because if the amount of impurities is more than this, the softening temperature of the grain boundary glass phase decreases, and the strength at high temperatures decreases.
【0007】本発明では上記各種酸化物系助剤と共にジ
ルコン(ZrO2 ・SiO2 )を添加することを特徴と
している。窒化ケイ素粉末原料と各種酸化物系助剤によ
って1500〜1700℃という低い温度で緻密化し、
かつジルコンの添加で一層の高強度が実現できる。ジル
コン以外の酸化物系助剤としては、代表的には、Y2 O
3 ,Yb2 O3 ,Al2 O3 ,MgAl2 O4 ,TiO
2 ,ZrO2 ,3Al2 O3 ・2SiO2 (ムライ
ト),その他の希土類金属酸化物、などが挙げられる。
これらの助剤は窒化ケイ素粉末粒子表面に存在する酸化
ケイ素と液相を生成し、1500〜1700℃で充分に
緻密な焼結体となるために液相焼結の促進剤として不可
欠である。The present invention is characterized in that zircon (ZrO 2 .SiO 2 ) is added together with the various oxide-based auxiliaries. Densified at a low temperature of 1500 to 1700 ° C. with silicon nitride powder raw materials and various oxide-based auxiliaries,
Further, even higher strength can be realized by adding zircon. As an oxide-based auxiliary agent other than zircon, typically, Y 2 O
3, Yb 2 O 3, Al 2 O 3, MgAl 2 O 4, TiO
2 , ZrO 2 , 3Al 2 O 3 .2SiO 2 (mullite), and other rare earth metal oxides.
These auxiliaries generate a liquid phase with silicon oxide present on the surface of the silicon nitride powder particles, and are indispensable as liquid phase sintering accelerators in order to form a sufficiently dense sintered body at 1500 to 1700 ° C.
【0008】好ましい酸化物系助剤の例はY2 O3 ,Y
2 O3 +MgAl2 O4 ,3Al2 O3 ・2SiO
2 (ムライト)、Al2 O3 などである。Y2 O3 やY
2 O3 +MgAl2 O4 は1000℃4点曲げ強度10
00MPa 以上の強度を与え、ムライトは1300〜14
00℃での高強度を与える。Y2 O3 は針状晶のβ−S
i 3 N4 結晶の生成を促進し、結晶粒のアスペクト比を
大きくして焼結体の強度、破壊靱性が向上する。MgA
l2 O4 は焼結温度を低下させる効果があり、その結果
として焼結体に微細な組織を発現させる。[0008] Examples of preferred oxide-based auxiliaries are YTwoOThree, Y
TwoOThree+ MgAlTwoOFour, 3AlTwoOThree・ 2SiO
Two(Mullite), AlTwoOThreeAnd so on. YTwoOThreeAnd Y
TwoOThree+ MgAlTwoOFourIs 1000 ° C 4-point bending strength 10
Gives strength of more than 00MPa, mullite 1300-14
Gives high strength at 00 ° C. YTwoOThreeIs the needle-like β-S
i ThreeNFourPromotes crystal formation and reduces the aspect ratio of crystal grains
When it is increased, the strength and fracture toughness of the sintered body are improved. MgA
lTwoOFourHas the effect of lowering the sintering temperature,
As a result, a fine structure is expressed in the sintered body.
【0009】また、本発明では酸化物系以外の焼結助剤
を追加的に添加してもよい。例えば、AlN,Y2 (C
N2 )3 などである。焼結助剤は平均粒径0.05〜
0.5μm、より好ましくは0.3μm、純度99.0
%以上のものがよい。粒径が大きすぎると焼結性が低下
し、不純物が多いと所望の強度が得られない。In the present invention, a sintering aid other than oxides may be additionally added. For example, AlN, Y 2 (C
N 2 ) 3 and the like. The sintering aid has an average particle size of 0.05 to
0.5 μm, more preferably 0.3 μm, purity 99.0
% Or more is better. If the particle size is too large, the sinterability is reduced, and if there are many impurities, the desired strength cannot be obtained.
【0010】焼結助剤の量は焼結助剤の種類にも依存す
るが、一般にジルコンとその他の酸化物系助剤の総量で
5〜15重量%、より好ましくは6〜10重量%程度添
加する。5重量%未満では常圧焼結で緻密化せず、強度
が出ない一方、15重量%より多くなると高温強度が低
下する。また、ジルコンとその他の酸化物系助剤との割
合は重量比で1/4〜2/3が好ましいが、ジルコンと
ムライトの場合は1〜3が好ましい。これらの比よりジ
ルコンが少ないと高温強度向上効果は少なくなり、多い
と緻密化が阻害されるようになる。Although the amount of the sintering aid depends on the kind of the sintering aid, it is generally about 5 to 15% by weight, more preferably about 6 to 10% by weight based on the total amount of zircon and other oxide-based auxiliaries. Added. If it is less than 5% by weight, it will not be densified by normal pressure sintering, and the strength will not be obtained. Further, the ratio of zircon to other oxide-based auxiliaries is preferably 1/4 to 2/3 by weight ratio, but is preferably 1 to 3 in the case of zircon and mullite. If the ratio of zircon is smaller than these ratios, the effect of improving the high-temperature strength is reduced, and if the ratio is larger, densification is hindered.
【0011】また、上記焼結助剤と共に、非晶質のSi
−N−C粉末を添加すると、焼結過程中に微細SiC粒
子を粒界3重点位置及び粒内に生成し、これにより14
00℃で粒界相の軟化を防止し、またSiC粒子が分散
して亀裂進展に対し抵抗となり、強度(特に1400℃
強度)、破壊靱性を向上する作用がある。この非晶質S
i−N−C粉末は焼結温度でおよそ30重量%のSiC
と70重量%のSi3 N4 として結晶化するものであ
り、平均粒径0.3μm以下の粉末がよい。なお、同程
度の粒径の粉末として直接SiC粉末を添加してもよ
い。Further, together with the sintering aid, amorphous Si
The addition of -NC powder produces fine SiC particles during the sintering process at the grain boundary triple point and in the grains, thereby forming 14 SiC particles.
At 00 ° C., the softening of the grain boundary phase is prevented, and the SiC particles are dispersed to provide resistance to crack growth, and the strength (particularly 1400 ° C.)
Strength) and the effect of improving fracture toughness. This amorphous S
i-N-C powder has a sintering temperature of about 30% by weight of SiC.
And 70% by weight of Si 3 N 4 , and a powder having an average particle diameter of 0.3 μm or less is preferable. Note that SiC powder may be directly added as powder having a similar particle size.
【0012】上記の非晶質Si−N−C粉末を添加する
場合には、3〜20重量%が好ましく、より好ましくは
5〜15重量%であり、この範囲が比較的焼結し易く、
添加効果も顕著となる。出発原料粉末の成形は常法によ
ることができる。すなわち、典型的には、出発粉末を均
一に混合し、1000〜3000kg/cm2 程度の圧力で
静水圧プレスして成形する。When the above-mentioned amorphous Si-NC powder is added, the content is preferably 3 to 20% by weight, more preferably 5 to 15% by weight.
The effect of addition becomes remarkable. The molding of the starting material powder can be performed by a conventional method. That is, typically, the starting powders are uniformly mixed and molded by isostatic pressing at a pressure of about 1000 to 3000 kg / cm 2 .
【0013】次いで、焼成するが、本発明の方法では1
500〜1700℃の温度範囲で焼成する。1700℃
を越えるとジルコンの熱分解が著しくなり、また粒成長
のため組織が微細化しないので、強度が低下する。一
方、1500℃未満では充分に緻密化した焼結体が得ら
れず、強度が低い。焼成雰囲気は不活性であればよく、
例えば窒素、アルゴン、ヘリウムあるいはこれらの混合
ガス等、典型的には窒素である。Next, firing is performed.
Baking is performed in a temperature range of 500 to 1700 ° C. 1700 ° C
If the temperature exceeds the limit, thermal decomposition of zircon becomes remarkable, and the structure is not refined due to grain growth, so that the strength is reduced. On the other hand, if it is lower than 1500 ° C., a sufficiently dense sintered body cannot be obtained, and the strength is low. The firing atmosphere only needs to be inert,
For example, nitrogen such as nitrogen, argon, helium, or a mixed gas thereof is typically nitrogen.
【0014】本発明の窒化ケイ素焼結体の製造方法は、
上記のほかは、常法に従うことができる。また、本発明
では常圧低温焼結で、高強度を有する焼結体が得られる
利点があるが、加圧焼結によればさらに強度が向上する
効果がある。The method for producing a silicon nitride sintered body of the present invention comprises:
Other than the above, it is possible to follow a common law. Further, in the present invention, there is an advantage that a sintered body having high strength can be obtained by normal-pressure low-temperature sintering, but pressure sintering has an effect of further improving strength.
【0015】[0015]
【作用】焼結助剤の添加により焼結温度を1500〜1
700℃にし、焼結組織の微細化を図った上に、ジルコ
ンが添加されていると高温での強度が向上する。ジルコ
ンの詳細な作用は不明であるが、高温において粒界相の
粘度を高め、軟化防止に効果があるものと考えられる。The sintering temperature is adjusted to 1500 to 1 by adding a sintering aid.
When the temperature is set to 700 ° C., the sintered structure is refined, and zircon is added, the strength at high temperatures is improved. Although the detailed action of zircon is unknown, it is thought that it increases the viscosity of the grain boundary phase at high temperatures and is effective in preventing softening.
【0016】[0016]
【実施例】実施例1 Si3 N4 粉末(平均粒径0.5μm以下、α化率92
〜97%)に焼結助剤としてY2 O3 粉末(平均粒径
0.3μm、純度99.9%)、ZrO2 ・SiO2 粉
末(平均粒径0.5μm以下、純度97%以上)を添加
した粉末を混合(窒化ケイ素製ボールミル)し、200
kg/cm2 の圧力で加圧成形し、その成形体を薄ゴムに詰
め、真空封入後、CIPにて3000kg/cm2 の圧力で
加圧後、この成形体を表1に示す条件でN2 雰囲気中の
炉内で焼結させた。昇温速度1℃/min 、最高温度での
保持時間は4時間とした。 Example 1 Example 1 Si 3 N 4 powder (average particle size 0.5 μm or less, pregelatinization rate 92
97%) in the Y 2 O 3 powder (average particle size 0.3μm as a sintering aid, 99.9% purity), ZrO 2 · SiO 2 powder (mean particle size 0.5μm or less, more than 97% pure) Was mixed (silicon nitride ball mill) and 200
The molded body was press-molded at a pressure of kg / cm 2 , the molded body was packed in thin rubber, vacuum-sealed, and then pressurized at a pressure of 3000 kg / cm 2 by CIP. It was sintered in a furnace in two atmospheres. The heating rate was 1 ° C./min, and the holding time at the highest temperature was 4 hours.
【0017】これらの焼結体の室温4点曲げ強度(JI
S R 1601)、高温4点曲げ強度(JIS A
1604、大気中)を各10本測定してその平均強度を
表1に示す。焼結体の相対密度はn−ブタノール置換法
で求めた嵩密度を理論密度で除して得た値である。比較
のために、実施例1と同様な方法で成形したのち、この
成形体を表2に示す条件でN2 雰囲気中の炉内焼結させ
表2の結果を得た。The four-point bending strength of these sintered bodies at room temperature (JI
SR 1601), high-temperature four-point bending strength (JIS A)
1604, in the atmosphere) and the average intensity is shown in Table 1. The relative density of the sintered body is a value obtained by dividing the bulk density obtained by the n-butanol substitution method by the theoretical density. For comparison, after being molded in the same manner as in Example 1, this molded body was sintered in a furnace in an N 2 atmosphere under the conditions shown in Table 2 to obtain the results shown in Table 2.
【0018】[0018]
【表1】 [Table 1]
【0019】[0019]
【表2】 [Table 2]
【0020】実施例2 シリコンジイミドの熱分解法、又は金属シリコンの直接
窒化法により生成されたSi3 N4 粉末(平均粒径0.
5μm以下、α化率92〜97%)に焼結助剤としてY
2 O3 粉末(平均粒径0.3μm、純度99.9%)、
MgAl2 O4 粉末(平均粒径0.3μm以下、純度9
9.9%)、ZrO2 ・SiO2 粉末(平均粒径0.5
μm以下、純度97%以上)を添加した粉末を混合(窒
化ケイ素製ボールミル)し、200kg/cm2 の圧力で加
圧成形し、その成形体を薄ゴムに詰め、真空封入後、C
IPにて3000kg/cm2 の圧力で加圧後、この成形体
を表3に示す条件でN2 雰囲気中の炉内で焼結させた。
緻密化過程で昇温速度1℃/min 、最高温度での保持時
間は4時間とした。 Example 2 Si 3 N 4 powder (average particle size: 0.3 mm) produced by a thermal decomposition method of silicon diimide or a direct nitridation method of metallic silicon.
5 μm or less, α conversion 92-97%)
2 O 3 powder (average particle size 0.3 μm, purity 99.9%),
MgAl 2 O 4 powder (average particle size 0.3 μm or less, purity 9
9.9%), ZrO 2 · SiO 2 powder (average particle size 0.5
(a ball mill made of silicon nitride), press-molded under a pressure of 200 kg / cm 2 , packed the molded product in a thin rubber, vacuum-sealed,
After pressurizing with IP at a pressure of 3000 kg / cm 2 , this molded body was sintered in a furnace in an N 2 atmosphere under the conditions shown in Table 3.
During the densification process, the temperature was raised at a rate of 1 ° C./min, and the holding time at the maximum temperature was 4 hours.
【0021】これらの焼結体の室温4点曲げ強度(JI
S R 1601)、高温4点曲げ強度(JIS R
1604、大気中)を各10本測定してその平均強度を
表3に示す。焼結体の相対密度はn−ブタノール置換法
で求めた嵩密度を理論密度で除して得た値である。実施
例2と同様な方法で成形したのち、この成形体を表4に
示す条件でN2 雰囲気中の炉内焼結させ表4の結果を得
た。The four-point bending strength of these sintered bodies at room temperature (JI
SR 1601), high-temperature four-point bending strength (JIS R
1604, in the atmosphere) and the average intensity is shown in Table 3. The relative density of the sintered body is a value obtained by dividing the bulk density obtained by the n-butanol substitution method by the theoretical density. After being molded in the same manner as in Example 2, the molded body was sintered in a furnace in an N 2 atmosphere under the conditions shown in Table 4 to obtain the results shown in Table 4.
【0022】[0022]
【表3】 [Table 3]
【0023】[0023]
【表4】 [Table 4]
【0024】表3、表4に見られるように、Y2 O3 ,
MgAl2 O4 と共に、ZrO2 とSiO2 とを単独で
はなくZrSiO4 として添加し、1700℃以下の低
い温度で焼結することにより、1000℃と空気中にお
いても1000MPa を越える4点曲げ強度値を発現し、
焼結時の雰囲気圧力を高めるとさらに高い強度値が得ら
れた(試料No.29,30,31)。As can be seen from Tables 3 and 4, Y 2 O 3 ,
By adding ZrO 2 and SiO 2 together with MgAl 2 O 4 as ZrSiO 4 instead of alone and sintering at a low temperature of 1700 ° C. or less, a four-point bending strength value exceeding 1000 MPa even at 1000 ° C. and in air. Express
When the atmospheric pressure during sintering was increased, higher strength values were obtained (Sample Nos. 29, 30, 31).
【0025】なお、焼結助剤はその総量が5〜15重量
%の範囲がよいようである。5%より少ないと緻密に焼
結せず、また15%より多くなると強度が低下するから
である。ZrO2 とSiO2 粉末を別々に添加すると比
較例No.34に示されるように緻密な焼結体は得られ
るが、強度が低下する。It seems that the total amount of the sintering aid is preferably in the range of 5 to 15% by weight. If it is less than 5%, dense sintering will not be performed, and if it is more than 15%, the strength will decrease. When ZrO 2 and SiO 2 powders were separately added, Comparative Example No. As shown in FIG. 34, a dense sintered body is obtained, but the strength is reduced.
【0026】また、Y2 O3 −MgAl2 O4 −ZrO
2 ,Y2 O3 −MgAl2 O4 −SiO2 、及びY2 O
3 −MgAl2 O4 組成では比較例試料No.35〜3
7に示されるように緻密な焼結体は得られるが1000
℃の強度低下が著しい。実施例3 Si3 N4 粉末: シリコンジイミドの熱分解法により生成されたSi
3 N4 粉末(平均粒径0.2μm、不純物総量50ppm
、α化率97〜100%) 金属シリコンの直接窒化法により生成されたSi3
N4 粉末(平均粒径0.9μm、不純物総量980ppm
、α化率92〜97%) ジルコン(ZrSiO2 )粉末:平均粒径0.2μm、
純度99% 他の焼結助剤:表5、表6の助剤、いずれも平均粒径
0.2〜0.6μm、純度99〜99.9%。Also, Y 2 O 3 —MgAl 2 O 4 —ZrO
2, Y 2 O 3 -MgAl 2 O 4 -SiO 2, and Y 2 O
3 -MgAl Comparative Sample No. In 2 O 4 composition 35-3
As shown in FIG. 7, a dense sintered body can be obtained,
Significant decrease in strength at ℃. Example 3 Si 3 N 4 powder: Si produced by thermal decomposition of silicon diimide
3 N 4 powder (average particle size 0.2 μm, total amount of impurities 50 ppm
, Alpha conversion rate 97-100%) Si 3 produced by direct nitriding of metallic silicon
N 4 powder (average particle size 0.9 μm, total amount of impurities 980 ppm
Zircon (ZrSiO 2 ) powder: average particle size 0.2 μm,
Purity 99% Other sintering aids: assistants in Tables 5 and 6, both having an average particle size of 0.2 to 0.6 μm and a purity of 99 to 99.9%.
【0027】上記粉末を表5に示す配合組成(Si3 N
4 粉末は焼結助剤の残部で、合計100重量%)で秤量
し、不純物(介在物)の混入を極力防止した窒化ケイ素
製ボールミルで混合した。得られた粉末を150kg/cm
2 の圧力で金型成形し、次いで薄ゴム袋に詰め、真空封
入後3000kg/cm2 の圧力で静水圧加圧を加え、成形
を完了した。The above powder was mixed with the composition (Si 3 N
(4) The powder was weighed in the balance of the sintering aid in a total of 100% by weight) and mixed with a silicon nitride ball mill in which impurities (inclusions) were minimized. 150 kg / cm of the obtained powder
Molding was performed at a pressure of 2 and then packed in a thin rubber bag. After sealing in vacuum, hydrostatic pressure was applied at a pressure of 3000 kg / cm 2 to complete the molding.
【0028】成形体を表5に示す条件で1気圧の窒素雰
囲気中で焼結させた。昇温速度は1300℃以上で1℃
/min に制御した。焼結温度における保持時間は4時間
とした。得られた焼結体を機械加工し、JIS−R−1
601及びJIS−R−1604規格に従い、室温及び
高温の4点曲げ強度を測定した。試験本数は15〜20
本で表5中の強度値は算術平均値である。The compact was sintered in a nitrogen atmosphere at 1 atm under the conditions shown in Table 5. 1 ℃ over 1300 ℃
/ Min. The holding time at the sintering temperature was 4 hours. The obtained sintered body was machined and subjected to JIS-R-1
According to 601 and JIS-R-1604 standards, room-temperature and high-temperature four-point bending strengths were measured. Test number is 15-20
Here, the intensity values in Table 5 are arithmetic mean values.
【0029】焼結体のかさ密度はn−ブタノールを用い
た置換法で測定したがいずれも全気孔率で1.5%以下
であった。境面研摩面の光学顕微鏡観察で1μm以上の
気孔は観察されなかった。実施例3と同様にして但し表
6に示す条件で成形体を成形し、焼結して、表6に示す
結果を得た。The bulk density of the sintered body was measured by a substitution method using n-butanol, and all were 1.5% or less in total porosity. No pores of 1 μm or more were observed by optical microscope observation of the polished boundary surface. A molded body was molded and sintered in the same manner as in Example 3, but under the conditions shown in Table 6, and the results shown in Table 6 were obtained.
【0030】[0030]
【表5】 [Table 5]
【0031】[0031]
【表6】 [Table 6]
【0032】表5、表6から、Y2 O3 あるいはY2 O
3 +MgAlO4 とジルコンの組合せにかぎらず、各種
の酸化物系助剤とジルコンの組合せにおいても、高温強
度の向上が可能であることが認められる。実施例4 Si3 N4 粉末(平均粒径:0.3μm、純度:99.
99%)に、焼結助剤としてZrSiO4 粉末(平均粒
径:0.3μm、純度:97%以上)、及び3Al2 O
3 ・2SiO2 粉末(平均粒径:0.3μm、純度:9
8%以上)を表7に示す配合割合で添加し、Si3 N4
製のボールミルでエタノール中で均一に混合した後、乾
燥して混合粉末を得た。From Tables 5 and 6, Y 2 O 3 or Y 2 O
It is recognized that the high-temperature strength can be improved not only in the combination of 3 + MgAlO 4 and zircon but also in the combination of various oxide-based auxiliaries and zircon. Example 4 Si 3 N 4 powder (average particle size: 0.3 μm, purity: 99.
99%), ZrSiO 4 powder (average particle size: 0.3 μm, purity: 97% or more) as a sintering aid, and 3Al 2 O
3 · 2SiO 2 powder (average particle size: 0.3 [mu] m, Purity: 9
8% or more) at the compounding ratio shown in Table 7, and Si 3 N 4
The mixture was uniformly mixed in ethanol with a ball mill manufactured by Co., Ltd., and then dried to obtain a mixed powder.
【0033】上記混合粉末を150kgf /cm2 の圧力で
加圧成形し、その成形体を薄ゴムにつめ、真空封入後、
CIP(Cold Isostatic Press)
処理にて3000kgf /cm2 の圧力で加圧して、所定形
状(6mm×5mm×45mm)の成形体を得た。上記成形体
を表7に示す最高加熱温度で4時間、窒素雰囲気中の炉
内で焼結して、焼結体を得た。なお、このときの昇温速
度は2℃/min とした。The above mixed powder is molded under pressure at a pressure of 150 kgf / cm 2 , the molded body is packed in thin rubber, and after vacuum sealing,
CIP (Cold Isostatic Press)
By pressing at a pressure of 3000 kgf / cm 2 in the treatment, a molded article having a predetermined shape (6 mm × 5 mm × 45 mm) was obtained. The compact was sintered in a furnace in a nitrogen atmosphere at the maximum heating temperature shown in Table 7 for 4 hours to obtain a sintered body. The heating rate at this time was 2 ° C./min.
【0034】これらの焼結体について、JIS R 1
604に従い、空気中で室温、1300℃、1400℃
の各温度で4点曲げ強度を各20本ずつ測定して、平均
強度を求めた。その結果を表7に示す。Regarding these sintered bodies, JIS R 1
Room temperature, 1300 ° C, 1400 ° C in air according to 604
At each temperature, 20 four-point bending strengths were measured for each, and the average strength was determined. Table 7 shows the results.
【0035】[0035]
【表7】 [Table 7]
【0036】表7に示す結果からも明らかなように、本
実施例に係る焼結体は、いずれも1300℃における高
温強度が800MPa 以上と高く、しかも1400℃にお
ける高温強度も700MPa 以上を確保できた。また、本
実施例では、常圧焼結でも充分な強度性向上の効果が得
られた。また、加圧下で焼結した試料No.54に係る
焼結体では、さらに高強度化を図ることができた。As is clear from the results shown in Table 7, all of the sintered bodies according to the present example have high high-temperature strength at 1300 ° C. of 800 MPa or more, and high-temperature strength at 1400 ° C. of 700 MPa or more. Was. Further, in this example, the effect of sufficiently improving the strength was obtained even at normal pressure sintering. Sample No. sintered under pressure. In the sintered body according to No. 54, the strength was further improved.
【0037】なお、ムライトの添加量が多すぎる焼結体
は高温での強度が低下し、ムライトの添加量が少なすぎ
る焼結体は強度が低下した。また焼結助剤の総量が多す
ぎる焼結体は、室温での強度は高いものの、1300℃
及び1400℃での高温強度が低下した。ジルコン2〜
6重量%、ムライト2〜4重量%の範囲内の添加量が好
ましい結果を与えた。It should be noted that the sintered body containing too much mullite had a low strength at a high temperature, and the sintered body containing too little mullite had a low strength. In addition, a sintered body in which the total amount of the sintering aid is too large has a high strength at room temperature, but has a high strength
And the high-temperature strength at 1400 ° C. decreased. Zircon 2
Additions in the range of 6% by weight and 2-4% by weight of mullite gave favorable results.
【0038】実施例5 用いた非晶質Si−N−C粉末は例えばヘキサメチルジ
シラザンとアンモニアを1000℃でCVD反応させ、
N2 気流中1350℃で熱分解して製造される複合粉末
であり、1500℃程度でSi3 N4 とSiCに熱分解
するものである。 Example 5 The amorphous Si-NC powder used was subjected to a CVD reaction of, for example, hexamethyldisilazane and ammonia at 1000 ° C.
It is a composite powder produced by pyrolysis at 1350 ° C. in a N 2 gas stream, and pyrolyzes to Si 3 N 4 and SiC at about 1500 ° C.
【0039】平均粒径0.2μm、金属元素不純物総量
50ppm のSi3 N4 粉末に、平均粒径0.2μmのY
2 O3 粉末とZrSiO4 粉末と平均粒径0.1μmの
非晶質Si−N−C粉末(加熱により生成するSiCの
換算値で30wt%の複合粉末) を表8に示す組成になる
よう秤量しエタノール中で均一に混合後、該混合粉末を
金型成形したのち該成形体に3t/cm2 の静水圧を負荷
させ、該成形体を1500〜1700℃の温度で焼結し
た。尚、最高温度到達後に表8に示す窒素ガス圧力まで
毎分20気圧の昇圧速度で加圧した。得られた焼結体の
強度をJIS規格に準じ、室温と高温4点曲げ試験(J
IS−R−1601,1604)で測定し、その結果を
表8に示した。A Si 3 N 4 powder having an average particle size of 0.2 μm and a total amount of metal element impurities of 50 ppm was added to Y having an average particle size of 0.2 μm.
2 O 3 powder, ZrSiO 4 powder, and amorphous Si—NC powder having an average particle diameter of 0.1 μm (composite powder of 30 wt% in terms of SiC generated by heating) were obtained to have the composition shown in Table 8. After weighing and uniformly mixing in ethanol, the mixed powder was molded into a mold, and then a hydrostatic pressure of 3 t / cm 2 was applied to the molded body, and the molded body was sintered at a temperature of 1500 to 1700 ° C. After reaching the maximum temperature, the pressure was increased to a nitrogen gas pressure shown in Table 8 at a rate of 20 atm / min. The strength of the obtained sintered body was measured at room temperature and at a high temperature four-point bending test (J
IS-R-1601, 1604) and the results are shown in Table 8.
【0040】[0040]
【表8】 [Table 8]
【0041】表8の結果を表1と比較すると、酸化物系
助剤、ジルコンと共に、非晶質Si−N−C粉末をさら
に添加すると、高温強度がより向上することが認められ
る。これは、焼結体の粒界及び粒内にSiCが生成して
分散しているため、高温での粒界相の軟化を防止すると
共に、クラックの進展を止める作用があり、強度、破壊
靱性が向上するものと考えられる。Comparing the results in Table 8 with those in Table 1, it can be seen that the high-temperature strength is further improved when amorphous Si-NC powder is further added together with the oxide auxiliary and zircon. This is because SiC is generated and dispersed in the grain boundaries and in the grains of the sintered body, so that it has the effect of preventing the softening of the grain boundary phase at high temperatures and stopping the progress of cracks, and has the effect of strength and fracture toughness. Is considered to be improved.
【0042】なお、上記と同じ系で実験した結果によれ
ば、酸化物系助剤とジルコンとの合計量で3〜10重量
%、非晶質Si−N−C粉末2〜15重量%の範囲内の
添加量で高温強度の向上が著しく、好ましい。According to the results of experiments conducted on the same system as described above, the total amount of the oxide-based auxiliary agent and zircon was 3 to 10% by weight, and 2 to 15% by weight of the amorphous Si—N—C powder. When the amount of addition is within the range, the high temperature strength is remarkably improved, which is preferable.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平3−193666(JP,A) (58)調査した分野(Int.Cl.7,DB名) C04B 35/58 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-193666 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) C04B 35/58
Claims (1)
くともZrO2 ・SiO2 (ジルコン)と、ZrO2 ・
SiO2 以外の酸化物系助剤とを添加した均一混合粉末
を成形し、該成形体を1500〜1700℃の温度で焼
結することを特徴とする窒化ケイ素焼結体の製造方法。At least ZrO 2 · SiO 2 (zircon) as a sintering aid and ZrO 2 ·
A method for producing a silicon nitride sintered body, comprising forming a homogeneous mixed powder to which an oxide-based auxiliary agent other than SiO 2 is added, and sintering the formed body at a temperature of 1500 to 1700 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4029508A JP3036207B2 (en) | 1991-10-29 | 1992-02-17 | Method for producing silicon nitride sintered body |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28314691 | 1991-10-29 | ||
| JP29000391 | 1991-11-06 | ||
| JP3-290003 | 1991-11-06 | ||
| JP3-283146 | 1991-11-06 | ||
| JP4029508A JP3036207B2 (en) | 1991-10-29 | 1992-02-17 | Method for producing silicon nitride sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05178669A JPH05178669A (en) | 1993-07-20 |
| JP3036207B2 true JP3036207B2 (en) | 2000-04-24 |
Family
ID=27286604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4029508A Expired - Lifetime JP3036207B2 (en) | 1991-10-29 | 1992-02-17 | Method for producing silicon nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3036207B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8725623B2 (en) | 2001-05-09 | 2014-05-13 | Bgc Partners, Inc. | Systems and methods for controlling traders from manipulating electronic trading markets |
| US9292865B2 (en) | 1996-12-13 | 2016-03-22 | Cantor Fitzgerald, L.P. Cfph, Llc | Dynamic keyboard for trading |
-
1992
- 1992-02-17 JP JP4029508A patent/JP3036207B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9292865B2 (en) | 1996-12-13 | 2016-03-22 | Cantor Fitzgerald, L.P. Cfph, Llc | Dynamic keyboard for trading |
| US8725623B2 (en) | 2001-05-09 | 2014-05-13 | Bgc Partners, Inc. | Systems and methods for controlling traders from manipulating electronic trading markets |
| US8738501B2 (en) | 2001-05-09 | 2014-05-27 | Bgc Partners, Inc. | Controlling traders from manipulating electronic trading markets |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05178669A (en) | 1993-07-20 |
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