JP2017038125A - Oscillation module, vibration device, electronic device, and moving object - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an oscillation module capable of suppressing fluctuation in oscillation frequency caused by electromagnetic coupling between an electrostatic capacitance element that configures a semiconductor circuit (an oscillation circuit) and an inductance element.SOLUTION: An oscillation module 1 comprises: a circuit board 5 as a substrate; a first circuit part 32 connected with the circuit board; and a second circuit part 60 connected with the circuit board. The first circuit part has: a semiconductor circuit provided on a principal surface of the semiconductor substrate; and a thin-film circuit element that has a conductive thin film, and that is arranged on the principal surface side of the semiconductor substrate. The semiconductor circuit is provided between the thin-film circuit element and an outer peripheral part of the semiconductor substrate in a plan view.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an oscillation module, a vibration device, an electronic apparatus, and a moving body.

  Conventionally, as a semiconductor device suitably used, for example, in an oscillation module including an oscillation circuit, for example, in Patent Document 1, an integrated circuit (semiconductor circuit) provided on a semiconductor substrate and the semiconductor device are provided on the semiconductor substrate. A semiconductor device including an insulating layer and an inductance element provided on the insulating layer is disclosed.

JP 2009-267212 A

  However, the semiconductor device disclosed in Patent Document 1 described above has a configuration in which an integrated circuit (semiconductor circuit) and an inductance element (inductance circuit) are arranged to overlap each other in plan view. In such a configuration, for example, when the integrated circuit (semiconductor circuit) is an oscillation circuit including a variable capacitance element, the inductance of the inductance element changes due to electromagnetic coupling between the variable capacitance element and the inductance element, or There has been a possibility that the capacitance value of the variable capacitance element changes, and thereby the oscillation frequency output from the oscillation circuit may fluctuate.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An oscillation module according to this application example includes a substrate, a first circuit unit connected to the substrate, and a second circuit unit connected to the substrate, and the first circuit The portion includes a semiconductor circuit provided on the main surface of the semiconductor substrate, and a thin film circuit element disposed on the main surface side of the semiconductor substrate and having a conductive thin film. In view, the thin film circuit element is provided between the thin film circuit element and the outer peripheral portion of the semiconductor substrate.

  According to this application example, the semiconductor circuit provided in the first circuit portion is disposed between the thin film circuit element and the outer peripheral portion of the semiconductor substrate in plan view. Since they do not overlap in plan view, the electromagnetic coupling between the semiconductor circuit and the thin film circuit element is reduced. Further, the semiconductor circuit is disposed between the thin film circuit element and the outer peripheral portion of the semiconductor substrate in plan view, in other words, the semiconductor circuit is disposed outside the thin film circuit element in plan view. For this reason, for example, when the thin film circuit element is an element that generates a magnetic field, the magnetic field density on the outside is generally smaller than the magnetic flux density on the inside of the thin film circuit element. By disposing outside the thin film circuit element, electromagnetic coupling between the semiconductor circuit and the thin film circuit element is reduced. Thereby, the fluctuation | variation of the characteristic value of a thin film circuit element resulting from the electromagnetic coupling of a semiconductor circuit and a thin film circuit element can be reduced. Therefore, for example, when the oscillation circuit is configured by the first circuit unit and the second circuit unit, even if the circuit uses the thin film circuit element in the oscillation loop of the oscillation circuit, the characteristic value of the thin film circuit element Thus, it is possible to provide an oscillation module that can reduce oscillation frequency fluctuations caused by fluctuations.

  Application Example 2 In the oscillation module according to the application example, the oscillation module includes a first insulating film provided so as to overlap the main surface and the semiconductor circuit, and the thin film circuit element includes the first insulating film. Preferably, it is provided on the opposite surface of the main surface and the surface in contact with at least one of the semiconductor circuits.

  According to this application example, since the semiconductor circuit and the thin film circuit element are provided via the first insulating film, an electrical insulation failure such as a short circuit between the semiconductor circuit and the thin film circuit element is prevented. Can be reduced.

  Application Example 3 In the oscillation module according to the application example described above, the external connection disposed on the first insulating film is a position that overlaps the semiconductor circuit and does not overlap the thin film circuit element in a plan view. It is preferable to have a terminal.

  According to this application example, it is possible to use the external connection terminals that are arranged so as to overlap in plan view as the shield electrode of the semiconductor circuit, so that it is possible to suppress external noise from affecting the semiconductor circuit, For example, by using the circuit of this application example in the oscillation loop of the oscillation circuit, it is possible to reduce the possibility of external noise becoming oscillation frequency noise. In addition, since the external connection terminal is arranged at a position that does not overlap with the thin film circuit element, electromagnetic coupling between the thin film circuit element and the semiconductor circuit can be suppressed, and the element value used for the thin film circuit element or the semiconductor circuit Can be reduced. Thereby, for example, fluctuations in the oscillation frequency in the oscillation module can be reduced.

  Application Example 4 In the oscillation module according to the application example described above, the oscillation module includes at least a second insulating film that covers the thin film circuit element, and in a plan view, overlaps the semiconductor circuit and does not overlap the thin film circuit element. It is preferable to have an external connection terminal disposed on the second insulating film.

  According to this application example, the second insulating film can prevent an electrical short circuit between the thin film circuit element and the external connection terminal, and the external connection terminal can be used as a shield electrode of the semiconductor circuit. It is possible to suppress the influence of noise on the semiconductor circuit. For example, by using the circuit of this application example in the oscillation loop of the oscillation circuit, it is possible to reduce the possibility of external noise becoming oscillation frequency noise. Can do. In addition, since the external connection terminal is arranged at a position that does not overlap with the thin film circuit element, electromagnetic coupling between the thin film circuit element and the semiconductor circuit can be suppressed, and the element value used for the thin film circuit element or the semiconductor circuit Can be reduced. Thereby, for example, fluctuations in the oscillation frequency in the oscillation module can be reduced.

  Application Example 5 In the oscillation module according to the application example described above, it is preferable that the semiconductor circuit includes a capacitive element, and the thin film circuit element includes an inductance circuit.

  According to this application example, the semiconductor circuit includes the capacitive element, the thin film circuit element includes the inductance circuit, and the oscillation circuit used in the oscillation loop of the oscillation circuit including them can be configured. . In such an oscillation circuit, when an inductance circuit is used as the extension coil, if the inductance circuit and the capacitive element are electromagnetically coupled, for example, between the inductance circuit and the capacitive element. There is a possibility that the stray capacitance is generated and the inductance value of the inductance circuit and the capacitance value of the capacitance element are fluctuated and the oscillation frequency is fluctuated. By using this configuration, electromagnetic coupling can be reduced, so that fluctuations in the inductance value of the inductance circuit and the capacitance value of the capacitive element can be reduced. For example, fluctuations in the oscillation frequency of the oscillation circuit can be reduced. can do.

  Application Example 6 In the oscillation module described in the application example, it is preferable that the inductance circuit is a wiring arranged in a spiral shape in a plan view.

  According to this application example, the semiconductor circuit is arranged outside the region where the inductance circuit is formed in a plan view. The inside of the spiral (spiral) pattern of the inductance circuit has a higher magnetic flux density than the outside of the spiral pattern (region between the inductance circuit and the outer peripheral portion of the semiconductor substrate). Therefore, when the semiconductor circuit is arranged inside the spiral pattern in a plan view, the electromagnetic coupling between the inductance circuit and the semiconductor circuit is increased, and there is a possibility that the variation of the inductance value is increased. By using this configuration, electromagnetic coupling can be reduced, so that fluctuations in the characteristic value of the inductance circuit can be reduced. For example, fluctuations in the oscillation frequency of the oscillation circuit can be reduced.

  Application Example 7 In the oscillation module according to the application example described above, it is preferable that the semiconductor circuit includes a resistance circuit that is electrically connected to the inductance circuit.

  According to this application example, it is possible to adjust the characteristics of the inductance circuit, particularly the Q value, using a resistance circuit electrically connected to the inductance circuit. It is possible to reduce abnormal oscillation.

  Application Example 8 In the oscillation module according to the application example described above, it is preferable that the resistance circuit can be variably controlled in resistance value.

  According to this application example, by variably controlling the resistance value of the resistance circuit electrically connected to the inductance circuit, the Q value of the inductance circuit can be set, for example, the oscillation frequency or the equivalent circuit constant value of the vibrator to be used. Can be adjusted each time For this reason, even if the oscillation frequency or the equivalent circuit constant value of the vibrator to be used is changed, it is possible to adjust so as not to cause abnormal oscillation.

  Application Example 9 In the oscillation module described in the application example, it is preferable that the second circuit unit includes a resistance element, a capacitance element, and an amplifier that are electrically connected to the inductance circuit.

  According to this application example, the oscillation circuit can be easily configured by the resistor element, the capacitor element, and the amplifier that are discretely connected to the substrate and the inductance circuit of the first circuit unit.

  Application Example 10 In the oscillation module according to the application example described above, it is preferable that the first circuit unit and the second circuit unit include at least a Corbitz oscillation circuit.

  According to this application example, the Corbitz oscillation circuit can be configured using the first circuit unit and the second circuit unit, and various circuit configurations can be easily realized.

  Application Example 11 A vibration device according to this application example includes a substrate, a first circuit unit connected to the substrate, a second circuit unit connected to the substrate, the first circuit unit, and the first circuit unit. A vibration element connected to at least one of the second circuit portions, wherein the first circuit portion is disposed on the main surface side of the semiconductor substrate, and a semiconductor circuit provided on the main surface of the semiconductor substrate A thin film circuit element having a conductive thin film, and the semiconductor circuit is provided between the thin film circuit element and the outer periphery of the first circuit portion in plan view. And

  According to this application example, since the semiconductor circuit is disposed between the thin film circuit element and the outer peripheral portion of the semiconductor substrate in plan view, the semiconductor circuit and the thin film circuit element do not overlap in plan view. Electromagnetic coupling between the circuit and the thin film circuit element is reduced. Further, the semiconductor circuit is disposed between the thin film circuit element and the outer peripheral portion of the semiconductor substrate in plan view, in other words, the semiconductor circuit is disposed outside the thin film circuit element in plan view. For this reason, for example, when the thin film circuit element is an element that generates a magnetic field, the magnetic field density on the outside is generally smaller than the magnetic flux density on the inside of the thin film circuit element. By disposing outside the thin film circuit element, electromagnetic coupling between the semiconductor circuit and the thin film circuit element is reduced. Thereby, the fluctuation | variation of the characteristic value of a thin film circuit element resulting from the electromagnetic coupling of a semiconductor circuit and a thin film circuit element can be reduced. Therefore, even in a circuit in which a thin film circuit element is used in an oscillation loop of an oscillation circuit that oscillates the vibration element, a vibration device that can reduce fluctuations in oscillation frequency caused by fluctuations in characteristic values of the thin film circuit elements Can be provided.

  Application Example 12 In the vibrating device according to the application example described above, it is preferable that the first circuit unit and the second circuit unit include at least a Corbitz oscillation circuit.

  According to this application example, the Corbitz oscillation circuit in the vibration device can be configured using the first circuit unit and the second circuit unit, and various circuit configurations can be easily realized.

  Application Example 13 An electronic apparatus according to this application example includes the oscillation module according to any one of the application examples described above.

  According to this application example, since the oscillation module in which the fluctuation of the characteristic value of the semiconductor circuit or the characteristic value of the thin film circuit element due to the electromagnetic coupling between the semiconductor circuit and the thin film circuit element is reduced is provided, stable characteristics are provided. It is possible to provide an electronic device capable of maintaining the above.

  [Application Example 14] A moving object according to this application example includes the oscillation module according to any one of the application examples described above.

  According to this application example, since the oscillation module in which the fluctuation of the characteristic value of the semiconductor circuit or the characteristic value of the thin film circuit element due to the electromagnetic coupling between the semiconductor circuit and the thin film circuit element is reduced is provided, stable characteristics are provided. Can be provided.

The perspective view which shows the outline of the oscillation module which concerns on this invention. The top view which shows the outline of the oscillation module which concerns on this invention. The front view which shows the outline of an oscillation module. The circuit block diagram which shows an example of the circuit provided in the oscillation module. The top view which shows the outline of a semiconductor circuit element (1st Embodiment). AA sectional drawing of FIG. The circuit block diagram which shows an example of the semiconductor circuit provided in the semiconductor circuit element. The top view which shows the outline of a semiconductor circuit element (2nd Embodiment). BB sectional drawing of FIG. Sectional drawing which shows a semiconductor circuit element (3rd Embodiment) and is equivalent to the BB cross section of FIG. The perspective view which shows the outline of the vibration device which concerns on this invention. The top view which shows the outline of a vibration device. CC sectional drawing of FIG. The circuit block diagram which shows an example of the circuit provided in the vibration device. The perspective view which shows the structure of the mobile type personal computer as an example of an electronic device. The perspective view which shows the structure of the mobile telephone as an example of an electronic device. The perspective view which shows the structure of the digital still camera as an example of an electronic device. The perspective view which shows the structure of the motor vehicle as an example of a mobile body.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings. In the accompanying drawings, for convenience of explanation, there are places where shapes, scales, and the like are expressed differently from actual ones.

[Oscillation module]
First, an oscillation module according to the present invention will be described with reference to FIG. 1, FIG. 2, FIG. 3, and FIG. FIG. 1 is a perspective view showing an outline of an oscillation module according to the present invention. FIG. 2 is a plan view schematically showing the oscillation module. FIG. 3 is a front view showing an outline of the oscillation module. FIG. 4 is a circuit configuration diagram illustrating an example of a circuit provided in the oscillation module.

  As shown in FIGS. 1, 2, 3, and 4, an oscillation module 1 according to the present invention includes a circuit board 5 as a board and a first circuit unit connected to a mounting surface 5 a of the circuit board 5. 32, and a second circuit portion 60 connected to the mounting surface 5a of the circuit board 5 in the same manner. The oscillation module 1 includes an oscillation circuit such as a Corbitz-type oscillation circuit by the semiconductor circuit element 100 constituting the first circuit portion 32 and the second circuit portion 60 constituted by a discrete circuit. Note that the vibrator 33 (see FIG. 4) including the vibration element excited by the oscillation circuit can be used by being electrically connected to the oscillation module 1. Note that the oscillation module 1 may include a vibrator 33 (see FIG. 4) in the oscillation module 1. Hereinafter, the circuit board 5, the semiconductor circuit element 100 constituting the first circuit part 32, and the second circuit part 60 constituted by a discrete circuit will be sequentially described in detail.

  The circuit board 5 as a board has a substantially rectangular front and back surface, and each circuit component such as the semiconductor circuit element 100 is mounted on a mounting surface 5a which is one surface (front surface). The circuit board 5 is formed of an insulator such as epoxy resin or ceramic. On the mounting surface (front surface) 5 a of the circuit board 5, a plurality of connection terminals 8 and a wiring pattern formed from a conductive material by plating film formation (mounting wiring, conductive terminals, electrodes, for example) are omitted. Etc.) are formed. In addition, the wiring pattern may be provided on the back surface in the front-back relationship with the mounting surface 5a.

  The semiconductor circuit element 100 includes, for example, a semiconductor circuit 30 (see FIG. 6) provided on a main surface 10a (see FIG. 6) of a semiconductor substrate 10 (see FIG. 6), and a thin film circuit element 40 (see FIG. 6) having a conductive thin film. And a first circuit portion 32 integrated therewith. The first circuit unit 32 is connected to the second circuit unit 60, the resistance element 34 (see FIG. 7), the vibrator 33, and the like. The semiconductor circuit 30 includes a resistance circuit 26, a capacitive element 27 (variable capacitive element), a regulator 35 (see FIG. 7), and the like. The semiconductor circuit element 100 will be described in detail later as the first to third embodiments.

  The second circuit unit 60 includes at least a transistor 61 as an amplifier, resistance elements 62 and 63, and a capacitance element 64 as a capacitance element. Each element (electronic component or member) is discretely provided on the circuit board 5. It is comprised by the discrete circuit arrange | positioned by. The transistor 61, the resistance elements 62 and 63, and the electrostatic capacitance element 64 constituting the second circuit section 60, and the semiconductor circuit 30 and the thin film circuit element 40 of the semiconductor circuit element 100 constituting the first circuit section 32 described above. As a result, an oscillation circuit such as a Corbitz oscillation circuit is formed. As described above, a Corbitz-type oscillation circuit can be configured by using the integrated first circuit unit 32 and the second circuit unit 60 configured by discrete circuits, and various circuit configurations can be easily realized. Can do.

  In the above description, the first circuit unit 32 is described as including the semiconductor circuit element 100 (the first embodiment of the semiconductor circuit element). However, the semiconductor circuit element 200 according to the second embodiment described later, It is also possible for the third embodiment to include any of the semiconductor circuit elements 300.

  The oscillation module 1 is not limited to the configuration described above, that is, the configuration in which the first circuit unit 32 and the second circuit unit 60 connected to the circuit board 5 are exposed, but the first circuit unit 32 and the second circuit unit. 60 may be configured to be covered with, for example, a resin mold material and not exposed. In addition, other electronic components and members may be connected to the circuit board 5.

  In addition, the oscillation module 1 uses, for example, an inner bottom surface of a ceramic package having a storage space in the center as a substrate to replace the circuit substrate 5 and a wiring pattern provided on the inner bottom surface, A configuration in which the second circuit unit 60 is connected is also possible. In this case, the storage space in which the first circuit unit 32 and the second circuit unit 60 are stored may be sealed with a lid or the like.

(Detailed description of semiconductor circuit elements)
Here, the semiconductor circuit element 100 constituting the first circuit unit 32 described above will be described in detail with reference to the drawings. In the following description, the first embodiment of the semiconductor circuit element will be described as the semiconductor circuit element 100, the second embodiment as the semiconductor circuit element 200, and the third embodiment as the semiconductor circuit element 300.

<First Embodiment>
A first embodiment of the semiconductor circuit element constituting the first circuit section 32 will be described with reference to FIGS. 5, 6 and 7. In this description, a semiconductor circuit element including at least an inductance circuit (thin film circuit element) connected in an oscillation loop of an oscillation circuit that oscillates a piezoelectric vibrating piece, a surface acoustic wave vibrating piece, or the like as a semiconductor circuit will be described. To do. 5 and 6 show the semiconductor circuit element according to the first embodiment, FIG. 5 is a plan view, and FIG. 6 is a cross-sectional view taken along line AA of FIG. In FIG. 5, the solder resist 24 shown in FIG. 6 is omitted in order to improve the visibility of the drawing. FIG. 7 is a circuit configuration diagram showing an example of a semiconductor circuit provided in the semiconductor circuit element.

  As shown in FIGS. 5 and 6, the semiconductor circuit element 100 according to the first embodiment includes a semiconductor circuit 30 provided on the main surface 10 a of the semiconductor substrate 10 having a rectangular shape and a thin film including the inductance circuit 13. Circuit element 40. Further, the semiconductor circuit element 100 is formed on the first insulating film 11 provided so as to overlap the main surface 10a of the semiconductor substrate 10 and the semiconductor circuit 30, and on the first insulating film 11 opposite to the main surface 10a. The external connection terminals 20, 21, 22, and 23 are provided. In addition, although wiring which electrically connects the semiconductor circuit 30, the thin film circuit element 40, etc. is provided on the main surface 10a and the insulating part 12, it is abbreviate | omitted in FIG. 5 and FIG. Further, the semiconductor substrate 10 is provided with an insulating portion 12 in a surface layer portion on the main surface 10a side. In the present embodiment, one surface of the semiconductor substrate 10 including the surface of the insulating portion 12 is a main surface 10a.

  The semiconductor circuit 30 is provided between the inductance circuit 13 (thin film circuit element 40) and the outer peripheral portion 10b of the semiconductor substrate 10 in plan view. In other words, the semiconductor circuit 30 is disposed at a position that does not overlap with the inductance circuit 13 (thin film circuit element 40) in plan view.

  The semiconductor circuit 30 includes a resistance circuit 26, a capacitance element 27 (variable capacitance element), a regulator 35 (see FIG. 7), and the like, and is provided on the main surface 10a side of the semiconductor substrate 10. An inductance circuit 13 (thin film circuit element 40) is provided on the main surface 10a side of the semiconductor substrate 10. The resistor circuit 26, the capacitive element 27 (variable capacitive element), the regulator 35, and the inductance circuit 13 (thin film circuit element 40) are connected to respective circuits as necessary by wiring not shown. The resistance circuit 26 can change the resistance value, and the resistance value is variably controlled based on an input control signal, and has a function of adjusting at least the characteristics of the inductance circuit 13. For example, a variable capacitance diode (also called a varactor or a varicap) is used as the capacitance element 27. The regulator 35 smoothes and constants the input DC power supply to create a reference voltage, and supplies the reference voltage to the capacitance element 27 (variable capacitance diode).

  The semiconductor circuit 30 according to the first embodiment has been described with the configuration in which the resistance circuit 26 is provided. However, the configuration is not limited to this, and the semiconductor circuit 30 may be configured without the resistance circuit 26. is there. The same applies to the semiconductor circuit 30 of the second embodiment and the third embodiment.

  In the present embodiment, as shown in FIG. 7, the first circuit unit 32 includes, for example, a resistor circuit 26, a capacitive element 27 (semiconductor circuit 30), a regulator 35, and an inductance circuit 13 (thin film circuit element 40). Together with the second circuit unit 60 (see FIG. 4) to form an oscillation circuit (Corbitz oscillation circuit), which is connected to a vibrator 33 including a vibration element such as a piezoelectric vibration piece or a surface acoustic wave element. can do. The first circuit unit 32 may be connected to the resistance element 34. In addition to the piezoelectric vibrating piece and the surface acoustic wave element, a MEMS vibrating piece or the like can be used as the vibrating element included in the vibrator 33. As a material of the vibration element included in the vibrator 33, crystal such as AT cut, Z cut, BT cut and SC cut, piezoelectric single crystal such as lithium tantalate and lithium niobate, and lead zirconate titanate A piezoelectric material such as a piezoelectric ceramic, or a silicon semiconductor may be used. Furthermore, the shape of the vibration element included in the vibrator 33 is not particularly limited, and may be a shape such as a bipod tuning fork, an H-type tuning fork, a tripod tuning fork, a comb tooth shape, an orthogonal shape, or a prism shape. As a means for exciting a vibration element included in the vibrator 33, a piezoelectric effect may be used, or electrostatic driving using a Coulomb force may be used.

  According to the first circuit unit 32 configured as described above, the characteristic oscillation, particularly the Q value, of the inductance circuit 13 is adjusted by the resistance circuit 26, thereby reducing abnormal oscillation caused by the inductance circuit 13 when the oscillation circuit is started. can do. Further, the resistance value of the resistance circuit 26 is variably controlled based on the input control signal, so that the Q value of the inductance circuit 13 can be set, for example, as an oscillation frequency or an equivalent circuit of a vibrator (vibration element) 33 to be used. It can be adjusted each time the constant value changes. For this reason, by controlling the resistance value of the resistance circuit 26 variably, it can be adjusted so that abnormal oscillation does not occur even if the oscillation frequency or the equivalent circuit constant value of the vibrator (vibration element) 33 used changes. It becomes possible.

  The external connection terminals 20, 21, 22, and 23 are provided one by one inside the four corners of the semiconductor substrate 10. The external connection terminals 20, 21, 22 and 23 are generally hemispherical bodies having conductivity, and are formed using, for example, solder balls. The external connection terminals 20, 21, 22, and 23 are disposed at positions that at least partially overlap the semiconductor circuit 30 and do not overlap the thin film circuit element 40 (inductance circuit 13) in plan view. The external connection terminals 20, 21, 22, and 23 are formed by using a single layer of metal such as gold, silver, copper, or nickel, or a combination of the above-described metals in addition to the above-described solder balls. Alternatively, it may be formed by screen-printing a metal such as solder and then melted by heating.

  By arranging the external connection terminals 20, 21, 22, and 23 in this way, the external connection terminals 20, 21, 22, and 23 can be used as shield electrodes for the semiconductor circuit 30. The influence on the circuit 30 can be suppressed. For example, when the semiconductor circuit 30 is used as the first circuit unit 32 including the oscillation circuit, it is possible to reduce the possibility that external noise becomes oscillation frequency noise. Further, the positions where the external connection terminals 20, 21, 22, 23 do not overlap with the thin film circuit element 40 (inductance circuit 13), in other words, the semiconductor circuit 30 is formed, and the thin film circuit element 40 (inductance circuit 13) is formed in plan view. The configuration is arranged outside the area. Thereby, since the distance of the inductance circuit 13 and the semiconductor circuit 30 can be separated, the electromagnetic coupling between both can be suppressed. Thereby, the fluctuation | variation of the inductance value of the thin film circuit element 40 (inductance circuit 13) can be made small. Thereby, for example, fluctuations in the oscillation frequency of the oscillation circuit can be reduced.

  The arrangement of the external connection terminals 20, 21, 22, and 23 is not limited to the above, and may be an arrangement in which a plurality of external connection terminals are provided in one place, for example. It does not need to be arranged corresponding to the corners (four corners).

  Further, the semiconductor circuit 30 may be provided so as to overlap with the vicinity region 25 including the external connection terminals 20, 21, 22, and 23 in a plan view. Even with such an arrangement of the semiconductor circuit 30 and the external connection terminals 20, 21, 22, and 23, the external connection terminals 20, 21, 22, and 23 can be used as shield electrodes for the semiconductor circuit 30. Similar to the external connection terminals 20, 21, 22, and 23 described above, the land electrodes 19, 28, and 29 disposed under the external connection terminals 20, 21, 22, and 23 are also shielded by the semiconductor circuit 30. Since it functions as an electrode, it is possible to suppress external noise from affecting the semiconductor circuit 30.

  The through electrodes 14 and 18 penetrate the first insulating film 11, and are on the front surface (the surface on the main surface 10 a side of the semiconductor substrate 10) and the back surface (the surface on the opposite side of the main surface 10 a side) of the first insulating film 11. Electrical connection to the surface). That is, the semiconductor circuit 30 and the inductance circuit 13 provided on the main surface 10a of the semiconductor substrate 10 and the external connection terminals 20, 21 provided on the first insulating film 11 opposite to the main surface 10a. 22 and 23 are electrically connected through the through electrodes 14 and 18 and the land electrode 17 provided on the main surface 10 a side of the semiconductor substrate 10.

  The thin film circuit element 40 includes an inductance circuit 13 formed in a spiral shape (spiral shape) with a square planar shape, and is provided on the insulating portion 12 provided on the main surface 10 a side of the semiconductor substrate 10. The inductance circuit 13 is composed of a conductive thin film, and as a thin film material, for example, a single layer of copper (Cu), gold (Au), silver (Ag), nickel (Ni), or a multilayer film in which the above metals are combined. It is comprised by the thin film formed using etc.

  One end of the inductance circuit 13 formed in a spiral shape (spiral shape) is connected to, for example, a vibrator (not shown) (vibrator 33: see FIG. 7) via an external connection terminal 23. Between the inductance circuit 13 and the external connection terminal 23, a land electrode 17, a through electrode 18 connected to the land electrode 17, and a land connected to the through electrode 18 and provided on the first insulating film 11. The electrodes 29 are electrically connected. The other end of the inductance circuit 13 is connected to the through electrode 14 via the first lead wiring 13a. The through electrode 14 is connected to the external connection terminal 20 via the second lead wires 15 and 16 and the land electrode 28 provided on the first insulating film 11, and a vibrator (vibrator 33: not shown). 7) and an oscillation circuit included in the second circuit unit 60. That is, both ends of the spirally formed inductance circuit 13 are connected to an oscillation loop of an oscillation circuit (not shown) via the external connection terminals 20 and 23.

  When the spiral pattern of the inductance circuit 13 is viewed in a plan view, the magnetic flux density is compared with the outer portion of the spiral pattern (the region between the inductance circuit 13 and the outer peripheral portion 10b of the semiconductor substrate 10). Become high. Therefore, when the semiconductor circuit 30 is arranged inside the spiral pattern in plan view, the electromagnetic coupling between the inductance circuit 13 and the semiconductor circuit 30 increases, and the variation of the inductance value increases. There is a possibility that the characteristic variation of 30 becomes large. By using this configuration, the electromagnetic coupling between the inductance circuit 13 and the semiconductor circuit 30 can be reduced, so that the fluctuation of the characteristic value of the inductance circuit 13 can be reduced or the fluctuation of the characteristic of the semiconductor circuit 30 can be reduced. For example, fluctuations in the oscillation frequency of the oscillation circuit can be reduced.

When the inductance circuit 13 (inductance element) is used as the extension coil in the oscillation circuit, if the inductance circuit 13 and the capacitive element 27 are electromagnetically coupled, for example, the inductance circuit 13 and the electrostatic circuit There is a possibility that stray capacitance is generated between the capacitor element 27 and the inductance value of the inductance circuit 13 (inductance element) fluctuates, and the oscillation frequency fluctuates.
According to the semiconductor circuit element 100 according to the first embodiment, the first circuit unit 32 including the semiconductor circuit 30 including the capacitive element 27 and the thin film circuit element 40 including the inductance circuit 13 is configured. By using the above configuration, the electromagnetic coupling between the semiconductor circuit 30 and the thin film circuit element 40 can be reduced as described above, so that fluctuations in the inductance value of the inductance circuit 13 can be reduced. For example, the first circuit The oscillation frequency fluctuation in the oscillation circuit including the unit 32 can be reduced.

Second Embodiment
A second embodiment of the semiconductor circuit element constituting the first circuit section 32 will be described with reference to FIGS. 8 and 9. The semiconductor circuit element of the second embodiment will be described by exemplifying a semiconductor circuit element having at least an oscillation circuit similar to that of the first embodiment. 8 and 9 show a semiconductor circuit element according to the second embodiment, FIG. 8 is a plan view, and FIG. 9 is a cross-sectional view taken along the line BB of FIG. In FIG. 8, the solder resist 24 shown in FIG. 9 is omitted in order to improve the visibility of the drawing. The same reference numerals are given to the same components as those in the first embodiment, and the description thereof may be omitted.

  The semiconductor circuit element 200 according to the second embodiment differs from the semiconductor circuit element 100 according to the first embodiment described above in the position where the thin film circuit element 40 including the inductance circuit 13 is provided. In the following description of the semiconductor circuit element 200 according to the second embodiment, the description will be focused on the portion related to the thin film circuit element 40 including the inductance circuit 13.

As shown in FIGS. 8 and 9, the semiconductor circuit element 200 according to the second embodiment includes a semiconductor circuit 30 provided on the main surface 10a of the semiconductor substrate 10 having a rectangular shape, and a semiconductor circuit 30 provided on the main surface 10a. A thin film circuit element 40 including an inductance circuit 13 provided on an opposite surface (upper surface) 11a which is a surface opposite to a surface of the first insulating film 11 which is in contact with the semiconductor substrate 10. . Furthermore, the semiconductor circuit element 200 is provided with external connection terminals 20, 21, 22, 23, etc. on the opposite surface (upper surface) 11a of the first insulating film 11, which is the same as in the first embodiment. Therefore, explanation is omitted. In addition, although wiring which electrically connects between elements and lands constituting the semiconductor circuit 30 is provided on the main surface 10a and the insulating portion 12, they are omitted in FIGS. .
Further, the semiconductor substrate 10 is provided with an insulating portion 12 in a surface layer portion on the main surface 10a side. In the present embodiment, one surface of the semiconductor substrate 10 including the surface of the insulating portion 12 is a main surface 10a.

  Configuration of semiconductor circuit 30 (for example, resistance circuit 26, capacitance element 27, regulator 35, etc.), inductance circuit 13 (thin film circuit element 40), configuration of external connection terminals 20, 21, 22, 23, and through electrode 14, Since the configuration of 18 is the same as that of the first embodiment, the description thereof is omitted.

  The thin film circuit element 40 includes an inductance circuit 13 formed in a spiral (spiral) shape with a square planar shape, and is provided on a surface 11 a opposite to the surface in contact with the semiconductor substrate 10 of the first insulating film 11. . The inductance circuit 13 is composed of a conductive thin film, and as a thin film material, for example, a single layer of copper (Cu), gold (Au), silver (Ag), nickel (Ni), or a multilayer film in which the above metals are combined. It is comprised by the thin film formed using etc.

  One end of the inductance circuit 13 formed in a spiral shape (spiral shape) is connected to a land electrode 29 provided on the opposite surface 11 a of the first insulating film 11, and is connected via an external connection terminal 23, for example. It is connected to a vibrator (not shown) (vibrator 33: see FIG. 7). The other end of the inductance circuit 13 is connected to the through electrode 14 via the first lead wiring 13b. The through electrode 14 is connected to the second lead wire 15a provided on the insulating portion 12, and is connected to the through electrode 18 via the third lead wire 16a extending from the second lead wire 15a. Yes.

  The through electrode 18 is connected to the external connection terminal 20 via a land electrode 28 provided on the opposite surface 11a of the first insulating film 11, and is not shown in the figure (vibrator 33: see FIG. 7) or The oscillator circuit included in the second circuit unit 60 is connected. That is, both ends of the spirally formed inductance circuit 13 are connected to an oscillation loop of an oscillation circuit (not shown) via the external connection terminals 20 and 23.

The semiconductor circuit element 200 according to the second embodiment has the following effects in addition to the effects described in the first embodiment.
According to the semiconductor circuit element 200 of the second embodiment, the semiconductor circuit 30 and the inductance circuit 13 (thin film circuit element 40) are provided via the first insulating film 11. For example, electrical insulation defects such as a short circuit with the circuit 13 (thin film circuit element 40) can be reduced.

<Third Embodiment>
A third embodiment of the semiconductor circuit element constituting the first circuit section 32 will be described with reference to FIG. The semiconductor circuit element of the third embodiment will be described by exemplifying a semiconductor circuit element including at least an oscillation circuit similar to that of the first embodiment. FIG. 10 shows a semiconductor circuit element according to the third embodiment, and is a cross-sectional view corresponding to a cross section taken along line BB of FIG. In addition, the same code | symbol is attached | subjected about the structure similar to the above-mentioned 1st Embodiment, The description may be abbreviate | omitted.

  The semiconductor circuit element 300 according to the third embodiment differs from the semiconductor circuit element 200 according to the second embodiment described above in the positions where the external connection terminals 20, 21, 22, and 23 are provided. In the following description of the semiconductor circuit element 300 according to the third embodiment, the description will focus on the portion related to the position where the external connection terminals 20, 21, 22, 23 are provided.

  As shown in FIG. 10, the semiconductor circuit element 300 according to the third embodiment is provided on the main surface 10a and the semiconductor circuit 30 provided on the main surface 10a of the semiconductor substrate 10 having a rectangular shape (not shown). And a thin film circuit element 40 including an inductance circuit 13 provided on the surface (upper surface) 11a opposite to the surface in contact with the semiconductor substrate 10 of the first insulating film 11. Further, the semiconductor circuit element 300 is provided on the opposite surface (upper surface) 11 a of the first insulating film 11 to the surface in contact with the semiconductor substrate 10 so as to cover the thin film circuit element 40 including the inductance circuit 13. The insulating film 50 is provided. In addition, the semiconductor circuit element 300 includes external connection terminals 20, 21, 22, and 23 provided on the upper surface 50a that is the surface opposite to the surface in contact with the first insulating film 11 of the second insulating film 50. ing.

  As in the first embodiment, wirings for electrically connecting elements and lands constituting the semiconductor circuit 30 are provided on the main surface 10a and the insulating portion 12, but in FIG. Omitted. Further, the semiconductor substrate 10 is provided with an insulating portion 12 in a surface layer portion on the main surface 10a side. In the present embodiment, one surface of the semiconductor substrate 10 including the surface of the insulating portion 12 is a main surface 10a.

  The configuration of the semiconductor circuit 30 (for example, the resistance circuit 26, the capacitive element 27, the regulator 35, etc.), the inductance circuit 13 (thin film circuit element 40), and the through electrodes 14 and 18 are the same as those in the first embodiment. Therefore, the description is omitted.

  The external connection terminals 20 and 21 are connected to land electrodes 52 and 54 provided on the upper surface 50 a of the second insulating film 50. The land electrodes 52 and 54 penetrate the second insulating film 50 in the direction of the surface (the surface on the main surface 10a side of the semiconductor substrate 10) and the back surface (the surface opposite to the surface on the main surface 10a side). The second through electrodes 51 and 53 are connected.

  The land electrode 52 connected to the external connection terminal 21 is connected to the second through electrode 51 and provided on the land electrode 19 and the first insulating film 11 provided on the first insulating film 11. It is connected to the semiconductor circuit 30 through the penetrating electrode 18 and the like. The land electrode 54 connected to the external connection terminal 20 is connected to the second through electrode 53, and is formed on the opposite surface (upper surface) 11 a of the first insulating film 11 through the second through electrode 53. It is connected to the land electrode 28 provided.

  The land electrode 28 includes a through electrode 14 that penetrates the first insulating film 11, a third lead wiring 16 a, a second lead wiring 15 a provided on the insulating portion 12, and a through electrode that penetrates the first insulating film 11. 14 is connected to the inductance circuit 13 through a first lead-out wiring 13b provided on the opposite surface (upper surface) 11a. That is, the external connection terminal 20 is electrically connected to one end of the inductance circuit 13.

The other external connection terminals 22 and 23 have the same configuration but will not be described.
Similarly to the first embodiment, the external connection terminals 20, 21, 22, and 23 are disposed at positions that overlap the semiconductor circuit 30 and do not overlap the inductance circuit 13 (thin film circuit element 40) in plan view. .

  According to the semiconductor circuit element 300 according to the third embodiment, the second insulating film 50 prevents an electrical short circuit between the inductance circuit 13 (thin film circuit element 40) and the external connection terminals 20, 21, 22, 23. Since the external connection terminals 20, 21, 22, and 23 can be used as shield electrodes of the semiconductor circuit 30, it is possible to suppress external noise from affecting the semiconductor circuit 30. For example, as an oscillation circuit When used, it is possible to reduce the possibility of external noise becoming oscillation frequency noise.

  According to the oscillation module 1 having the above-described configuration, the semiconductor circuit 30 provided in the semiconductor circuit elements 100, 200, and 300 that configure the first circuit unit 32 includes the thin film circuit element 40 and the semiconductor substrate 10 in plan view. Since the semiconductor circuit 30 and the thin film circuit element 40 do not overlap with each other in plan view because they are arranged between the outer peripheral portion 10b, electromagnetic coupling between the semiconductor circuit 30 and the thin film circuit element 40 is reduced.

  The semiconductor circuit 30 provided in the semiconductor circuit elements 100, 200, and 300 constituting the first circuit portion 32 is disposed between the thin film circuit element 40 and the outer peripheral portion of the semiconductor substrate 10 in plan view. Yes. In other words, the semiconductor circuit 30 is disposed outside the thin film circuit element 40 in plan view. For this reason, for example, when the thin film circuit element 40 is an element that generates a magnetic field, the magnetic field density outside the thin film circuit element 40 is generally smaller than the magnetic flux density inside the thin film circuit element 40. By disposing the circuit 30 outside the thin film circuit element 40, electromagnetic coupling between the semiconductor circuit 30 and the thin film circuit element 40 is reduced.

  As a result, fluctuations in the characteristic value of the thin film circuit element 40 due to electromagnetic coupling between the semiconductor circuit 30 provided in the first circuit section 32 and the thin film circuit element 40 can be reduced. Therefore, even in a circuit in which the thin film circuit element 40 is used in the oscillation loop of the oscillation circuit constituted by the first circuit unit 32 and the second circuit unit 60, oscillation caused by fluctuations in the characteristic value of the thin film circuit element 40 The oscillation module 1 capable of reducing frequency fluctuation can be provided.

[Vibration device]
The vibration device according to the present invention will be described with reference to FIGS. 11, 12, 13, and 14. FIG. 11 is a perspective view showing an outline of the vibration device according to the present invention. 12 and 13 schematically show the vibration device according to the present invention, FIG. 12 is a plan view in which the lid member is omitted (see through), and FIG. 13 is a cross-sectional view taken along the line CC in FIG. . FIG. 14 is a circuit configuration diagram illustrating an example of a circuit provided in the vibration device.

  11, 12, and 13, the vibration device 80 includes a vibrator 33, a package 90 that houses the vibrator 33, and a first circuit unit 32 and a second circuit that constitute an oscillation circuit that oscillates the vibrator 33. A lid 84 as a lid that forms an internal space 85 as a storage space between the circuit unit 60 and the package 90 is provided. Hereinafter, the package 90, the vibrator 33, the first circuit unit 32, the second circuit unit 60, and the lid 84 will be sequentially described in detail.

  As shown in FIGS. 12 and 13, a package 90 as a substrate is provided on the bottom plate 81, a frame-like side wall 82 provided on the outer peripheral edge of the surface 81 a of the bottom plate 81, and the upper surface of the side wall 82. And a seam ring 83 as a bonding material. The package 90 accommodates the vibrator 33, the first circuit unit 32, the second circuit unit 60, and the like.

The package 90 as a substrate has a recess 87 (internal space 85) opened on the upper surface. The opening of the recess 87 is closed by a lid 84 as a lid member joined to the side wall 82 via a seam ring 83 as a joining material. The lid 84 forms an internal space 85 in which the opening of the recess 87 of the package 90 is closed and sealed. The sealed internal space 85 can set its internal pressure to a desired atmospheric pressure. For example, the internal space 85 is filled with nitrogen gas to form an atmospheric pressure, or a vacuum (pressure lower than the normal atmospheric pressure (1 × 10 ⁵ Pa to 1 × 10 ⁻¹⁰ Pa or less (JIS Z 8126-1: 1999)). ), A more stable vibration of the vibrator 33 can be continued.

  The frame-shaped side wall 82 is provided in a substantially rectangular circumferential shape. In other words, the recess 87 has a substantially rectangular opening shape that opens on the upper surface on the side where the lid 84 is placed. A concave portion 87 surrounded by the plate-like bottom plate 81 and the frame-like side wall 82 serves as an internal space (housing space) 85 for housing the vibrator 33, the first circuit portion 32, the second circuit portion 60, and the like. A seam ring 83 made of an alloy such as Kovar is provided on the upper surface of the frame-shaped side wall 82. The seam ring 83 has a function as a bonding material between the lid 84 serving as a lid member and the side wall 82, and is provided in a frame shape (substantially rectangular circumferential shape) along the upper surface of the side wall 82.

  The package 90 is formed of a material having a thermal expansion coefficient that matches or is as close as possible to that of the vibrator 33 and the lid 84, and in this example, ceramic is used. The package 90 is formed by stacking and sintering green sheets formed into a predetermined shape. The green sheet is, for example, a product obtained by dispersing ceramic powder in a predetermined solution and adding a binder to form a kneaded product in the form of a sheet.

  PAD electrodes (terminal electrodes) and wiring patterns are formed on the surface (inner bottom surface) 81a of the bottom plate 81 constituting the bottom of the package 90, but are not shown. For PAD electrodes (terminal electrodes) and wiring patterns, for example, using a conductive paste such as silver / palladium or tungsten metallized, firing is performed after the required shape is formed, and then nickel, gold, silver, or the like is plated. Formed by. The PAD electrode (terminal electrode) corresponds to an external terminal 89 of the vibrator 33 to be described later, the semiconductor circuit elements 100, 200, and 300 in which the first circuit unit 32 is configured, and the electronic components that configure the second circuit unit 60. It is arranged to do. Further, the outer surface (back surface) 81b of the bottom plate 81 is provided with a terminal electrode 86 which is a metal layer. The terminal electrode 86 can be formed by, for example, plating nickel and gold or silver on a fired layer of silver / palladium. The PAD electrode may be electrically connected to the terminal electrode 86 on the outer surface (back surface) 81b of the package 90.

The vibrator 33 is a surface mount type piezoelectric vibrator in which a vibration element (not shown) is included in a ceramic package 88, for example. The internal space in which the vibration element is enclosed is sealed with a lid or the like, and the internal pressure can be set to a desired atmospheric pressure. For example, the internal space is filled with nitrogen gas to obtain an atmospheric pressure, or a vacuum (pressure lower than normal atmospheric pressure (1 × 10 ⁵ Pa to 1 × 10 ⁻¹⁰ Pa or less (JIS Z 8126-1: 1999)) The state of the space filled with the gas) can be continued more stably. Note that the vibrator 33 of this embodiment is set to the above-described vacuum. The vibrator 33 is connected to the front surface (inner bottom surface) 81 a of the package 90 by an external terminal 89 provided on the outer surface of the ceramic package 88, and is electrically connected to at least one of the first circuit unit 32 and the second circuit unit 60. It is connected.

  The vibrating element is a piezoelectric vibrating piece, a surface acoustic wave element, or the like, for example, a crystal such as AT cut, Z cut, BT cut, or SC cut, a piezoelectric single crystal such as lithium tantalate or lithium niobate, or zircon. Piezoelectric materials such as piezoelectric ceramics such as lead acid titanate, or silicon semiconductors can be used. As the vibrator 33, a MEMS vibrator including a MEMS vibrating piece or a sensor device including a vibration type sensor element such as acceleration or angular velocity can be used.

  The first circuit section 32 is configured in a semiconductor circuit element 100, and as shown in FIG. 14, a resistance circuit 26, a capacitance element 27 (semiconductor circuit 30), a regulator 35, and an inductance circuit 13 (thin film circuit element). 40). The configuration of the first circuit unit 32 and the like are the same as those of the oscillation module 1 (see FIG. 7) described above, and a description thereof will be omitted. The semiconductor circuit element 100 includes a surface of a bottom plate 81 that constitutes the bottom of the package 90 (external connection terminals 20, 21, 22, and 23) provided one by one inside the four corners of the semiconductor substrate 10 (see FIG. 6). It is connected to a PAD electrode (not shown) provided on the inner bottom surface 81a.

  As shown in FIG. 14, the second circuit section 60 includes at least a transistor 61, resistance elements 62 and 63, and a capacitance element 64, and each element (member) is a bottom plate 81 that forms the bottom of the package 90. It is comprised by the discrete circuit arrange | positioned discretely on the surface (inner bottom face) 81a. An integrated semiconductor of the transistor 61, the resistance elements 62 and 63, and the capacitance element 64 that constitute the second circuit section 60 by a discrete circuit, and the semiconductor circuit element 100 that constitutes the first circuit section 32 described above. The circuit 30 (see FIG. 7) and the thin film circuit element 40 constitute an oscillation circuit such as a Corbitz-type oscillation circuit, which is connected to the vibrator 33 including a vibration element such as a piezoelectric vibrating piece or a surface acoustic wave element. Can do. As described above, the Corbitz-type oscillation circuit can be configured by using the integrated first circuit unit 32 and the second circuit unit 60 configured by a discrete circuit, thereby easily realizing various circuit configurations. be able to.

  The lid 84 is a plate-like member, closes the opening of the recess 87 that opens to the upper surface side of the package 90, and is joined around the opening of the recess 87 using, for example, a seam welding method. Since the lid 84 of this example is plate-shaped, it is easy to form and further has excellent shape stability. In addition, a Kovar plate material is used for the lid 84 of this example. By using a Kovar plate for the lid 84, when sealing, the seam ring 83 made of Kovar and the lid 84 are melted in the same molten state, and are also easily alloyed so that sealing is easy. And reliably. The lid 84 may be made of a plate material of another material instead of Kovar. For example, a metal material such as 42 alloy or stainless steel, or the same material as the side wall 82 of the package 90 can be used.

  Since the first circuit section 32 (semiconductor circuit element 100) having the same configuration as that of the oscillation module 1 described above is used for the vibration device 80, the semiconductor circuit 30 (see FIG. 5) provided in the first circuit section 32 is used. 7) and the thin film circuit element 40 (see FIG. 7) can be reduced in variation in characteristic values of the thin film circuit element 40 due to electromagnetic coupling. Therefore, even in a circuit in which the thin film circuit element 40 is used in the oscillation loop of the oscillation circuit configured by the first circuit unit 32 and the second circuit unit 60, vibration caused by fluctuations in the characteristic value of the thin film circuit element 40 It is possible to provide the vibration device 80 that can reduce fluctuations in the oscillation frequency of the child 33.

  In addition, an oscillation circuit such as a Corbitz-type oscillation circuit is formed by the second circuit unit 60 configured by a discrete circuit and the first circuit unit 32 of the semiconductor circuit element 100 by the integrated semiconductor circuit 30 (see FIG. 7). For example, an integrated vibration device 80 connected to a vibrator 33 including a vibration element such as a piezoelectric vibration piece or a surface acoustic wave element can be provided. Thus, for example, an oscillation circuit of a Corbitz-type oscillation circuit can be configured by using the integrated first circuit unit 32 and the second circuit unit 60 configured by a discrete circuit. It can be easily realized.

The configuration according to the present invention includes other vibration devices such as a simple crystal oscillator SPXO (Simple Packaged X'tal Oscillator), a temperature compensated crystal oscillator TCXO (Temperature Compensated X'tal Oscillator), and a voltage controlled crystal oscillator VCXO. (Voltage Controlled X'tal Oscillator), Temperature Control Crystal Oscillator OCXO (Oven Controlled Xtal Oscillator), etc.
Moreover, as a vibration device, it can apply also as sensing devices, such as an acceleration sensor, an angular velocity sensor, a pressure sensor (atmospheric pressure sensor), for example.

  Moreover, although the vibration device 80 by the above was demonstrated with the structure which accommodates the 2nd circuit part 60, the 1st circuit part 32, and the vibrator | oscillator 33 in the package using a ceramic, it is not restricted to this. For example, a storage space is formed by a metallic base and a cap, and the second circuit unit 60, the first circuit unit 32, and the vibrator 33 are stored in the storage space, or the second circuit is formed on the circuit board. The part 60, the 1st circuit part 32, and the vibrator | oscillator 33 may be connected, and the structure which covers the outer periphery with a coating | covering material etc. may be sufficient.

[Electronics]
Next, electronic devices to which the oscillation module 1 and the vibration device 80 according to an embodiment of the present invention are applied will be described in detail with reference to FIGS. In the description, an example in which the oscillation module 1 (semiconductor circuit element 100) is applied is shown.

  FIG. 15 is a perspective view schematically illustrating a configuration of a mobile (or notebook) personal computer as an electronic apparatus including the oscillation module 1 (semiconductor circuit element 100) according to an embodiment of the present invention. In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 1108. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably. Such a personal computer 1100 incorporates the oscillation module 1 (semiconductor circuit element 100).

  FIG. 16 is a perspective view schematically illustrating a configuration of a mobile phone (including PHS) as an electronic apparatus including the oscillation module 1 (semiconductor circuit element 100) according to an embodiment of the present invention. In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and a display unit 1208 is disposed between the operation buttons 1202 and the earpiece 1204. Such a cellular phone 1200 incorporates the oscillation module 1 (semiconductor circuit element 100).

  FIG. 17 is a perspective view schematically illustrating a configuration of a digital still camera as an electronic apparatus including the oscillation module 1 (semiconductor circuit element 100) according to an embodiment of the present invention. In this figure, connection with an external device is also simply shown. Here, the conventional film camera sensitizes the silver halide photographic film with the light image of the subject, whereas the digital still camera 1300 photoelectrically converts the light image of the subject with an imaging device such as a CCD (Charge Coupled Device). To generate an imaging signal (image signal).

  A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to perform display based on an imaging signal from the CCD. The display unit 1310 displays a subject as an electronic image. Functions as a viewfinder. A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

  When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308. In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation. Such a digital still camera 1300 incorporates the oscillation module 1 (semiconductor circuit element 100).

  The oscillation module 1 (semiconductor circuit element 100) according to an embodiment of the present invention includes a personal computer (mobile personal computer) in FIG. 15, a mobile phone in FIG. 16, and a digital still camera in FIG. The present invention can be applied to the following electronic devices. The oscillation module 1 (semiconductor circuit element 100) includes, for example, an inkjet discharge device (for example, an inkjet printer), a laptop personal computer, a tablet personal computer, a storage area network device such as a router or a switch, a local area network device, a mobile Base terminal equipment, TV, video camera, video recorder, car navigation device, real-time clock device, pager, electronic notebook (including communication function), electronic dictionary, calculator, electronic game device, word processor, workstation, TV Telephone, crime prevention TV monitor, electronic binoculars, POS terminal, medical equipment (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish finder Applicable to various measuring instruments, instruments (eg, vehicle, aircraft, ship instruments), flight simulator, head mounted display, motion trace, motion tracking, motion controller, PDR (pedestrian position measurement), etc. be able to.

[Moving object]
A moving body to which the oscillation module 1 and the vibration device 80 according to an embodiment of the present invention are applied will be described with reference to FIG. FIG. 18 is a perspective view schematically showing an automobile as an example of a moving body. In this description, an example in which the oscillation module 1 (semiconductor circuit element 100) is applied is shown.

  As shown in FIG. 18, an oscillation module 1 (semiconductor circuit element 100) according to the present invention is mounted on an automobile 506. For example, as shown in the figure, an automobile 506 as a moving body has an electronic control unit 508 that incorporates a semiconductor circuit element 100 and controls a tire 509 and the like mounted on a vehicle body 507. In addition, the oscillation module 1 (semiconductor circuit element 100) includes a keyless entry, an immobilizer, a car navigation system, a car air conditioner, an anti-lock brake system (ABS), an air bag, a tire pressure monitoring system (TPMS: Tire). It can be widely applied to electronic control units (ECUs) such as Pressure Monitoring System), engine control, brake systems, battery monitors for hybrid and electric vehicles, and vehicle body attitude control systems.

  DESCRIPTION OF SYMBOLS 1 ... Oscillation module, 5 ... Circuit board as board, 5a ... Mounting surface (one side (front surface)) of circuit board, 8 ... Connection terminal, 10 ... Semiconductor substrate, 10a ... Main surface of semiconductor substrate, 10b ... Semiconductor 11. Peripheral portion of substrate, 11 ... first insulating film, 11a ... opposite surface of first insulating film, 12 ... insulating portion, 13 ... inductance circuit, 13a, 13b ... first extraction wiring, 14 ... through electrode, 15, 15a, 16 ... second lead wiring, 16a ... third lead wiring, 17 ... land electrode, 18 ... penetrating electrode, 19 ... land electrode, 20, 21, 22, 23 ... external connection terminal, 24 ... solder resist, 25 ... Neighboring region, 26 ... resistor circuit, 27 ... electrostatic capacitance element, 28, 29 ... land electrode, 30 ... semiconductor circuit, 32 ... first circuit section, 33 ... vibrator, 34 ... resistor element, 35 ... regulator, 40 ... Thin film circuit elements, DESCRIPTION OF SYMBOLS 0 ... 2nd insulating film, 51, 53 ... 2nd penetration electrode, 52, 54 ... Land electrode, 60 ... 2nd circuit part, 61 ... Transistor, 62, 63 ... Resistance element, 64 ... Capacitance element, DESCRIPTION OF SYMBOLS 80 ... Vibrating device, 100 ... Semiconductor circuit element according to the first embodiment, 200 ... Semiconductor circuit element according to the second embodiment, 300 ... Semiconductor circuit element according to the third embodiment, 506 ... Automobile as a moving body, 1100 ... a mobile personal computer as an electronic device, 1200 ... a mobile phone as an electronic device, 1300 ... a digital still camera as an electronic device.

Claims (14)

A substrate,
A first circuit portion connected to the substrate;
A second circuit portion connected to the substrate,
The first circuit unit includes:
A semiconductor circuit provided on the main surface of the semiconductor substrate;
A thin film circuit element disposed on the main surface side of the semiconductor substrate and having a conductive thin film;
The oscillation module, wherein the semiconductor circuit is provided between the thin film circuit element and an outer peripheral portion of the semiconductor substrate in a plan view. A first insulating film provided so as to overlap the main surface and the semiconductor circuit;
2. The oscillation module according to claim 1, wherein the thin film circuit element is provided on a surface opposite to a surface in contact with the main surface of the first insulating film and at least one of the semiconductor circuits.   3. The device according to claim 2, further comprising an external connection terminal disposed on the first insulating film at a position that overlaps with the semiconductor circuit and does not overlap with the thin film circuit element in a plan view. Oscillation module. A second insulating film covering at least the thin film circuit element;
3. The device according to claim 2, further comprising an external connection terminal disposed on the second insulating film at a position that overlaps with the semiconductor circuit and does not overlap with the thin film circuit element in a plan view. Oscillation module.   5. The oscillation module according to claim 1, wherein the semiconductor circuit includes a capacitive element, and the thin film circuit element includes an inductance circuit. 6.   The oscillation module according to claim 5, wherein the inductance circuit is a wiring arranged in a spiral shape in a plan view.   The oscillation module according to claim 5 or 6, wherein the semiconductor circuit includes a resistance circuit electrically connected to the inductance circuit.   The oscillation module according to claim 7, wherein a resistance value of the resistance circuit can be variably controlled.   The said 2nd circuit part contains the resistive element, the capacitive element, and amplifier which are electrically connected to the said inductance circuit, The Claim 1 thru | or 8 characterized by the above-mentioned. Oscillation module.   10. The oscillation module according to claim 1, wherein the first circuit unit and the second circuit unit include at least a Corbitz oscillation circuit. 11. A substrate,
A first circuit portion connected to the substrate;
A second circuit portion connected to the substrate;
A vibration element connected to at least one of the first circuit part and the second circuit part,
The first circuit unit includes:
A semiconductor circuit provided on the main surface of the semiconductor substrate;
A thin film circuit element disposed on the main surface side of the semiconductor substrate and having a conductive thin film;
The vibration device, wherein the semiconductor circuit is provided between the thin film circuit element and an outer peripheral portion of the first circuit portion in plan view.   The vibrating device according to claim 11, wherein the first circuit unit and the second circuit unit include at least a Corbitz oscillation circuit.   An electronic apparatus comprising the oscillation module according to claim 1.   A moving body comprising the oscillation module according to claim 1.

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