JP2017036493A5 - - Google Patents
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- JP2017036493A5 JP2017036493A5 JP2016135523A JP2016135523A JP2017036493A5 JP 2017036493 A5 JP2017036493 A5 JP 2017036493A5 JP 2016135523 A JP2016135523 A JP 2016135523A JP 2016135523 A JP2016135523 A JP 2016135523A JP 2017036493 A5 JP2017036493 A5 JP 2017036493A5
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- JP
- Japan
- Prior art keywords
- gas
- valve
- channel
- gas source
- delivery system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 23
- 239000012530 fluid Substances 0.000 claims 13
- 238000000231 atomic layer deposition Methods 0.000 claims 10
- 238000010926 purge Methods 0.000 claims 10
- 238000004140 cleaning Methods 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 4
- 239000002243 precursor Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000009826 distribution Methods 0.000 claims 2
Claims (26)
入口および出口を含み、前記入口は第１のガス源と流体連通する、第１のバルブと、
第１の入口、第２の入口、および出口を含み、前記第１の入口は前記第１のバルブの前記出口と流体連通し、前記第２の入口は第２のガス源と流体連通する、第２のバルブと、
入口および出口を含み、前記入口は第３のガス源と流体連通する、第３のバルブと、
コネクタであって、
第１のガスチャネルと、
第１の端部および第２の端部を有する第２のガスチャネルを規定するシリンダと、
前記シリンダは、前記シリンダおよび前記第１のガスチャネルが共同で前記シリンダの外側表面と前記第１のガスチャネルの内側表面との間に流路を規定するように、前記第１のガスチャネル内部に少なくとも部分的に配置され、
前記流路は、前記第３のバルブの前記出口および前記第２のガスチャネルの前記第１の端部と流体連通し、
前記第２のガスチャネルの前記第２の端部と、前記第２のバルブの前記出口と、および処理チャンバのガス分配装置と流体連通する第３のガスチャネルと、
前記第２のガスチャネルの前記第１の端部は、前記第２のガスチャネルの前記第２の端部の入口に提供されたガスが、前記第２のチャネルを前記第２の端部から前記第１の端部まで流れて前記第１のガスチャネルの前記入口に流れ、前記第１のガスチャネルを通って前記第３のガスチャネルに流れるように、前記第１のガスチャネルの入口と流体連通すること、
を備えるコネクタと、
を備える、ガス送出システム。 A gas delivery system for a substrate processing system comprising:
A first valve including an inlet and an outlet, wherein the inlet is in fluid communication with a first gas source;
A first inlet, a second inlet, and an outlet, wherein the first inlet is in fluid communication with the outlet of the first valve, and the second inlet is in fluid communication with a second gas source; A second valve;
A third valve including an inlet and an outlet, wherein the inlet is in fluid communication with a third gas source;
A connector,
A first gas channel;
A cylinder defining a second gas channel having a first end and a second end;
The cylinder includes an interior of the first gas channel such that the cylinder and the first gas channel jointly define a flow path between an outer surface of the cylinder and an inner surface of the first gas channel. Arranged at least in part
The flow path is in fluid communication with the outlet of the third valve and the first end of the second gas channel;
A second gas channel in fluid communication with the second end of the second gas channel, the outlet of the second valve, and a gas distribution device of a processing chamber;
The first end of the second gas channel is formed by the gas provided to the inlet of the second end of the second gas channel from the second end. An inlet of the first gas channel to flow to the first end, to the inlet of the first gas channel, and to the third gas channel through the first gas channel; Fluid communication,
A connector comprising:
A gas delivery system comprising:
前記第１のバルブおよび前記第２のバルブを使用して、第１の所定期間中、前記第２のガス源から前駆体ガスを供給し、
前記第１のバルブおよび前記第２のバルブを使用して、第２の所定期間中、前記第１のガス源からパージ・ガスを供給し、
前記第３のバルブを使用して、第３の所定期間中、前記第３のガス源から酸化ガスを供給するように構成されている、ガス送出システム。 The gas delivery system according to claim 9, wherein the controller includes:
Supplying a precursor gas from the second gas source during a first predetermined period using the first valve and the second valve;
Using the first valve and the second valve to supply a purge gas from the first gas source during a second predetermined period of time;
A gas delivery system configured to supply an oxidizing gas from the third gas source during a third predetermined period using the third valve.
前記第１の所定期間は原子層堆積（ＡＬＤ）プロセスのドーズ段に相当し、
前記第２の所定期間は前記ＡＬＤプロセスのバースト・パージ段に相当し、
前記第３の所定期間は前記ＡＬＤプロセスのドーズ・パージ段、ＲＦ段、およびＲＦパージ段に相当する、ガス送出システム。 The gas delivery system according to claim 10, wherein
The first predetermined period corresponds to a dose stage of an atomic layer deposition (ALD) process;
The second predetermined period corresponds to a burst purge stage of the ALD process,
The gas delivery system, wherein the third predetermined period corresponds to a dose purge stage, an RF stage, and an RF purge stage of the ALD process.
第１のバルブを使用して、第１のガス源からガスを選択的に供給し、
第２のバルブを使用して、前記第１のガス源または第２のガス源からガスを選択的に供給し、
第３のバルブを使用して、第３のガス源からガスを選択的に供給し、
第１のガスチャネルと、
第１の端部および第２の端部を有する第２のガスチャネルを規定するシリンダと、
前記シリンダおよび前記第１のガスチャネルは共同で前記シリンダの外側表面と前記第１のガスチャネルの内側表面との間に流路を規定するように、前記第１のガスチャネル内部に少なくとも部分的に配置され、
前記流路は前記第３のバルブの出口および前記第２のガスチャネルの前記第１の端部と流体連通し、
前記第２のガスチャネルの前記第２の端部、前記第２のバルブの出口、および処理チャンバのガス分配装置と流体連通する第３のガスチャネルであって、前記第２のガスチャネルの前記第１の端部は、前記第２のガスチャネルの前記第２の端部の入口に提供されたガスが、前記第２のチャネルを前記第２の端部から前記第１の端部まで流れて前記第１のガスチャネルの前記入口に流れ、前記第１のガスチャネルを通って前記第３のガスチャネルに流れるように、前記第１のガスチャネルの入口と流体連通する、第３のガスチャネルと、
を含むコネクタを提供すること、
を備える、方法。 A method for supplying a gas to a substrate processing system, comprising:
Using a first valve to selectively supply gas from a first gas source;
Using a second valve to selectively supply gas from the first gas source or the second gas source;
Using a third valve to selectively supply gas from a third gas source;
A first gas channel;
A cylinder defining a second gas channel having a first end and a second end;
The cylinder and the first gas channel cooperate at least partially within the first gas channel so as to define a flow path between the outer surface of the cylinder and the inner surface of the first gas channel. Placed in
The flow path is in fluid communication with an outlet of the third valve and the first end of the second gas channel;
A third gas channel in fluid communication with the second end of the second gas channel, the outlet of the second valve, and a gas distribution device of a processing chamber , wherein the third gas channel of the second gas channel The first end is configured such that the gas provided at the inlet of the second end of the second gas channel flows through the second channel from the second end to the first end. A third gas in fluid communication with the inlet of the first gas channel so as to flow to the inlet of the first gas channel and through the first gas channel to the third gas channel. Channel,
Providing a connector including,
A method comprising:
前記第１のバルブおよび前記第２のバルブを使用して、第１の所定期間中、前記第２のガス源から前駆体ガスを供給し、
前記第１のバルブおよび前記第２のバルブを使用して、第２の所定期間中、前記第１のガス源からパージ・ガスを供給し、
前記第３のバルブを使用して、第３の所定期間中、前記第３のガス源から酸化ガスを供給するように構成されている、方法。 23. The method of claim 22, wherein the controller is
Supplying a precursor gas from the second gas source during a first predetermined period using the first valve and the second valve;
Using the first valve and the second valve to supply a purge gas from the first gas source during a second predetermined period of time;
A method configured to supply an oxidizing gas from the third gas source during a third predetermined period using the third valve.
前記第１の所定期間は原子層堆積（ＡＬＤ）プロセスのドーズ段に相当し、
前記第２の所定期間は前記ＡＬＤプロセスのバースト・パージ段に相当し、
前記第３の所定期間はが前記ＡＬＤプロセスのドーズ・パージ段、ＲＦ段、およびＲＦパージ段に相当する、方法。 24. The method of claim 23, comprising:
The first predetermined period corresponds to a dose stage of an atomic layer deposition (ALD) process;
The second predetermined period corresponds to a burst purge stage of the ALD process,
The method wherein the third predetermined period corresponds to a dose purge stage, an RF stage, and an RF purge stage of the ALD process.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562192844P | 2015-07-15 | 2015-07-15 | |
| US62/192,844 | 2015-07-15 | ||
| US14/805,852 US9631276B2 (en) | 2014-11-26 | 2015-07-22 | Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition |
| US14/805,852 | 2015-07-22 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017036493A JP2017036493A (en) | 2017-02-16 |
| JP2017036493A5 true JP2017036493A5 (en) | 2019-08-15 |
| JP6976043B2 JP6976043B2 (en) | 2021-12-01 |
Family
ID=57843186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016135523A Active JP6976043B2 (en) | 2015-07-15 | 2016-07-08 | Systems and methods that enable low defect treatment by controlled separation and delivery of chemicals during atomic layer deposition |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6976043B2 (en) |
| KR (2) | KR102620610B1 (en) |
| CN (1) | CN106356285B (en) |
| SG (1) | SG10201605682QA (en) |
| TW (1) | TWI705153B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6803815B2 (en) * | 2017-07-25 | 2020-12-23 | 東京エレクトロン株式会社 | Substrate processing equipment and operation method of substrate processing equipment |
| US10529543B2 (en) * | 2017-11-15 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etch process with rotatable shower head |
| JP6902991B2 (en) * | 2017-12-19 | 2021-07-14 | 株式会社日立ハイテク | Plasma processing equipment |
| JP7524068B2 (en) * | 2018-04-03 | 2024-07-29 | ラム リサーチ コーポレーション | MEMS Coriolis Gas Flow Controller |
| US11021792B2 (en) * | 2018-08-17 | 2021-06-01 | Lam Research Corporation | Symmetric precursor delivery |
| CN113767453B (en) | 2020-04-03 | 2023-12-12 | 株式会社日立高新技术 | Plasma processing device and plasma processing method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136871A (en) * | 1985-12-11 | 1987-06-19 | Canon Inc | Optical sensor, its manufacturing method and its manufacturing device |
| US4660598A (en) * | 1986-01-13 | 1987-04-28 | Spraying Systems Co. | Diaphragm-type antidrip valve |
| US5964446A (en) * | 1996-08-21 | 1999-10-12 | Fisher Controls International, Inc. | Elastomeric element valve |
| US5939831A (en) * | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
| US7389792B2 (en) * | 1998-12-24 | 2008-06-24 | Nl Technologies, Ltd. | Dip tube valve assembly |
| JP3736322B2 (en) | 2000-04-26 | 2006-01-18 | 昭和電工株式会社 | Vapor growth equipment |
| JP2009267345A (en) | 2008-04-01 | 2009-11-12 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP5270476B2 (en) * | 2009-07-07 | 2013-08-21 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
| US8945317B2 (en) * | 2011-12-07 | 2015-02-03 | Lam Research Corporation | System and method for cleaning gas injectors |
-
2016
- 2016-07-08 JP JP2016135523A patent/JP6976043B2/en active Active
- 2016-07-12 TW TW105121842A patent/TWI705153B/en active
- 2016-07-12 SG SG10201605682QA patent/SG10201605682QA/en unknown
- 2016-07-12 KR KR1020160087971A patent/KR102620610B1/en active Active
- 2016-07-13 CN CN201610549750.3A patent/CN106356285B/en active Active
-
2023
- 2023-12-28 KR KR1020230194407A patent/KR102775291B1/en active Active
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