JP2015043563A - Radiation detection element substrate, radiation detection element substrate inspection apparatus, and radiation detection element substrate inspection method - Google Patents

Abstract

An inspection apparatus for inspecting a radiation detection element substrate having one transistor per pixel is used to inspect a radiation detection element substrate having a plurality of transistors per pixel without significant changes. An object of the present invention is to provide a radiation detection element substrate, a radiation detection element substrate inspection apparatus, and a radiation detection element substrate inspection method. A control wiring M is extended to a region outside the mounting substrate, and an inspection connection wiring portion 22 is provided to connect to each other. Then, the gate-off voltage is collectively applied to the connection terminals 24 connected to the inspection connection wiring portion 22 to perform inspection. [Selection] Figure 4

Description

  The present invention relates to a radiation detection element substrate, a radiation detection element substrate inspection apparatus, and a radiation detection element substrate inspection method.

  In recent years, a radiation sensitive layer is disposed on a TFT (Thin Film Transistor) active matrix substrate (hereinafter simply referred to as a TFT substrate, but a TFT substrate used in a radiation detector may be particularly referred to as a radiation detection element substrate). However, radiation detectors (sometimes referred to as “electronic cassettes”, etc.) such as FPD (Flat Panel Detector) that can convert radiation dose into digital data (electrical signals) have been put into practical use. In addition, a radiation image capturing apparatus that captures a radiation image represented by the amount of irradiated radiation using this radiation detector has been put into practical use.

  Moreover, in the TFT substrate used for the electronic cassette as described above, there is a trend toward higher functionality by connecting a plurality of transistors in a pixel.

  For example, in Patent Document 1, in addition to the conventional 1 × 1 reading in which reading is performed for each pixel, 2 × 2 reading in which 4 × 2 × 2 pixels are collectively read as analog values is possible.

  In Patent Document 2, a read transistor and a reset transistor are provided, respectively, to achieve a high speed reset.

JP 2012-130656 A JP 2013-033945 A

  A TFT substrate inspection apparatus often uses a liquid crystal TFT inspection apparatus, but the liquid crystal TFT generally has a structure having one transistor (switching element) per pixel. Since the TFT substrate having a plurality of transistors for one pixel as in Patent Documents 1 and 2, it is necessary for each transistor to perform its own operation, an inspection apparatus used for a TFT substrate having one transistor per pixel is provided. It cannot be inspected simply by using it.

  In order to perform inspection, it is necessary to add an expensive probe unit for a TFT substrate having a plurality of transistors per pixel, or to develop dedicated software for control. It has become an issue.

  The present invention has been made in consideration of the above-mentioned facts, and it is possible to make one pixel without significant additional changes to an inspection apparatus for inspecting a radiation detection element substrate having one switching element per pixel. An object of the present invention is to provide a radiation detection element substrate, a radiation detection element substrate inspection apparatus, and a radiation detection element substrate inspection method capable of inspecting a radiation detection element substrate having a plurality of switching elements.

  In order to achieve the above object, a radiation detection element substrate of the present invention is provided corresponding to one pixel among a plurality of pixels, and includes a plurality of first switching elements and a plurality of switching elements for reading out charges generated according to radiation. First control connected to the control terminal of one or more second switching elements, the first switching elements provided for one or more of the pixels, and having a use different from the use of the first switching elements A first control terminal connected to the first switching element via a wiring; a second control terminal connected to the second switching element via a second control wiring connected to the control end of the second switching element; A first region including a signal terminal connected to the first switching element via a signal wiring connected to the output terminal of the one switching element, and a portion to be removed after completion of the inspection adjacent to the first region In conjunction provided, and includes a second region including a test connection wiring section connected to the second control terminal.

  According to the radiation detection element substrate of the present invention, a plurality of first switching elements for reading out charges corresponding to one pixel generated in response to radiation, provided corresponding to one or more pixels among the plurality of pixels. The first control connected to the first switching element via the first control wiring connected to the control end of the first switching element, one or more second switching elements having different uses from the use of the first switching element Via a terminal, a second control terminal connected to the second switching element via a second control wiring connected to the control end of the second switching element, and a signal wiring connected to the output end of the first switching element. For a radiation detection element substrate having a first region including a signal terminal connected to the first switching element, a second control terminal is provided in a portion that is removed after the inspection adjacent to the first region. Connected second region including the test connection wiring portion was is provided.

  In this way, by providing the inspection connection wiring portion in a portion removed after the inspection adjacent to the first region, a voltage for turning off the second switching element is applied to the inspection connection wiring portion at the time of inspection. Thus, it is possible to inspect a radiation detection element substrate having a plurality of transistors per pixel using a conventional inspection apparatus.

  The first control terminal and the second control terminal may be arranged on opposite sides.

  Further, the first region or the second region may further include a connection terminal connected to the inspection connection wiring part. In this case, a terminal having a larger area than at least one of the first control terminal and the second control terminal may be applied as the connection terminal. Thus, by making the connection terminal a terminal having a larger area than at least one of the first control terminal and the second control terminal, it is possible to easily contact the connection terminal with a simple probe pin that does not require high accuracy. Thus, the inspection jig can be made at low cost.

  In addition, as the second switching element, a switching element for converting the resolution may be applied, a switching element for resetting the charge may be applied, or the charge may be accumulated. A switching element may be applied.

  In addition, when a test is performed on the test connection wiring portion, a voltage for turning off the second switching element is applied, so that the second switching element can be invalidated and a test can be performed using a conventional test apparatus.

  On the other hand, the inspection apparatus for a radiation detection element substrate according to the present invention corresponds to one or more pixels among a plurality of first switching elements and a plurality of pixels for reading out charges corresponding to one pixel generated according to radiation. One or more second switching elements having different uses from the first switching element, and connected to the first switching element via a first control wiring connected to the control end of the first switching element. A first control terminal, a second control terminal connected to the second switching element via a second control wiring connected to the control end of the second switching element, and a signal wiring connected to the output end of the first switching element The first region including the signal terminal connected to the first switching element via the first region and the portion that is removed after the inspection adjacent to the first region is connected to the second control terminal. A second region including the inspection connection wiring portion, a first probe unit for contacting the first control terminal in the radiation detection element substrate, a second probe unit for contacting the signal terminal, A voltage application unit for applying a voltage for turning off the second switching element to the inspection connection wiring unit.

  According to the radiation detection element substrate inspection apparatus of the present invention, a voltage application unit for applying a voltage for turning off the second switching element to the inspection connection wiring part is replaced with a conventional inspection apparatus (one switching element per pixel). The radiation detection element substrate inspection apparatus having the above. As a result, the radiation detection element substrate having a plurality of transistors per pixel can be inspected as in the conventional case.

  Note that the voltage application unit may apply a voltage for turning off the second switching element from an empty terminal of the first probe unit or the second probe unit.

  Furthermore, the inspection method for a radiation detection element substrate according to the present invention corresponds to one or more pixels among a plurality of first switching elements and a plurality of pixels for reading out charges corresponding to one pixel generated according to radiation. One or more second switching elements having different uses from the first switching element, and connected to the first switching element via a first control wiring connected to the control end of the first switching element. A first control terminal, a second control terminal connected to the second switching element via a second control wiring connected to the control end of the second switching element, and a signal wiring connected to the output end of the first switching element The first region including the signal terminal connected to the first switching element via the first region, the portion adjacent to the first region to be removed after the inspection, and the second control terminal A second region including a connected inspection wiring portion, and a first switching terminal connected to the inspection connection wiring portion in the radiation detection element substrate, with a voltage applied to turn off the second switching element being applied to the first control terminal from the first control terminal. A voltage applying step for applying a voltage for turning on one switching element, and an accumulation step for storing a charge in each pixel by applying a constant voltage from a signal terminal while applying a voltage for turning on the first switching element in the voltage applying step. And applying a voltage for turning off the first switching element from the first control terminal to hold the charge accumulation of each pixel in the accumulation step for a certain period of time, and turning on the first switching element from the first control terminal. Performing a reading step of applying a voltage and reading out the charge held in the holding step from the signal terminal, whereby the radiation detection element substrate Carrying out the inspection.

  According to the method for inspecting a radiation detection element substrate of the present invention, a conventional inspection (radiation detection element having one switching element per pixel) in a state where a voltage for turning off the second switching element is applied to the inspection connection wiring portion. The inspection is performed in the same manner as the inspection of the substrate. Therefore, just by applying a voltage for turning off the second switching element to the inspection connection wiring portion, the second switching element is invalidated, and the radiation detection element substrate having a plurality of switching elements in one pixel as in the prior art. Inspection is possible.

  As described above, according to the present invention, radiation detection having a plurality of switching elements per pixel without significant additional changes to the inspection apparatus for inspecting a radiation detection element substrate having one switching element per pixel. The radiation detection element substrate capable of inspecting the element substrate, the radiation detection element substrate inspection apparatus, and the radiation detection element substrate inspection method can be provided.

It is a schematic block diagram of an example of the radiographic imaging system which concerns on this Embodiment. It is a figure which shows the structure of an example of the 1st area | region of the radiation detection element board | substrate which concerns on this Embodiment. It is a figure which shows an example of the conventional test | inspection apparatus which test | inspects the radiation detection element board | substrate with which one transistor was provided in one pixel. It is a figure which shows the structure of an example of the radiation detection element board | substrate which concerns on this Embodiment. It is a figure which shows an example of the test | inspection apparatus which performs the conduction | electrical_connection test of the radiation detection element board | substrate which concerns on this Embodiment. It is a timing chart which shows an example of the test | inspection sequence by the test | inspection apparatus which performs the conduction | electrical_connection test of the radiation detection element board | substrate which concerns on this Embodiment. It is a figure which shows an example in case the number of transistors connected to 1 pixel is three. It is a figure which shows the structure of an example of the radiation detection element board | substrate in case a 1st area | region contains a connection terminal.

  First, a schematic configuration of a radiographic imaging system using a radiographic imaging apparatus including a radiation detection element substrate according to the present embodiment will be described. FIG. 1 is a schematic configuration diagram of an example of a radiographic image capturing system according to the present embodiment.

  The radiographic imaging system 100 includes a radiation irradiation device 104 that irradiates a subject 102 with radiation (for example, X-ray (X-ray), etc.), and radiation detection that detects radiation irradiated from the radiation irradiation device 104 and transmitted through the subject 102. A radiographic image capturing apparatus 108 including a device 106, and a control apparatus 110 for instructing radiographic image capturing and acquiring a radiographic image from the radiographic image capturing apparatus 108. At the timing based on the control of the control device 110, the radiation carrying the image information by passing through the subject 102 irradiated from the radiation irradiation device 104 and positioned at the imaging position is irradiated to the radiographic imaging device 108.

  The radiographic image capturing system 100 has a function of performing still image capturing and moving image capturing, and the control device 110 performs still image capturing and moving image based on a user instruction or control of the radiation irradiation device 104. The radiographing apparatus 108 is instructed to switch which radiographing is performed.

  The radiographic imaging device 108 includes a radiation detector 106. The radiation detector 106 has a function of generating charges according to the amount of radiation transmitted through the subject 102, and generating and outputting image information indicating a radiation image based on the charge amount of the generated charges.

  Subsequently, a radiation detection element substrate applied to the radiation detector 106 according to the present exemplary embodiment will be described. The radiation detection element substrate according to the present embodiment includes a first region and a second region. FIG. 2 is a diagram showing the configuration of the first region of the radiation detection element substrate according to the present embodiment. In the present embodiment, an indirect conversion type radiation detection element substrate that once converts radiation such as X-rays into light and converts the converted light into electric charge will be described as an example. A conversion type radiation detection element substrate may be used. In the present embodiment, the first region refers to a region corresponding to a substrate that may be referred to as a so-called mounting substrate.

  In the first region 11 of the radiation detection element substrate 10 applied to the radiation detector according to the present exemplary embodiment, the sensor unit 12 that receives light to generate charges and accumulates the generated charges is included in the sensor unit 12. A plurality of pixels 20 including two transistors Tr1 and Tr2 which are switching elements for reading out the accumulated charges are arranged in a matrix. In the present embodiment, the sensor unit 12 generates electric charges by irradiating the sensor unit 12 with light converted from radiation by the scintillator.

  The pixel 20 has one direction (control wiring direction corresponding to the horizontal direction in FIG. 2, hereinafter also referred to as “row direction”) and a cross direction with respect to the row direction (signal wiring direction corresponding to the vertical direction in FIG. 2, hereinafter referred to as “column direction”. Are also arranged in a matrix. In FIG. 2, the arrangement of the pixels 20 is simplified, but for example, 1024 × 1024 pixels 20 are arranged in the row direction and the column direction.

  The radiation detection element substrate 10 includes a plurality of control wirings G (G1 to G8 in FIG. 2) for controlling on / off of the transistor Tr1 and a plurality of controls for controlling on / off of the transistor Tr2. A wiring M (M1 to M4 in FIG. 2) and a plurality of signal wirings D (D1 to D5 in FIG. 2) provided for each column of the pixels 20 for reading out the charges accumulated in the sensor unit 12. Are provided so as to cross each other.

  The sensor unit 12 of each pixel 20 is connected to a common wiring (not shown), and a bias voltage is applied from a power source (not shown) via the common wiring.

  A control terminal of each transistor Tr1 is connected to the control wiring G, and a control signal for switching each transistor Tr1 flows. Thus, when the control signal flows through each control wiring G, each transistor Tr1 is switched. The control wiring M is connected to the control terminal of each transistor Tr2, and a control signal for switching each transistor Tr2 flows. As described above, when the control signal flows through each control wiring M, each transistor Tr2 is switched.

  To the signal wiring D, the output terminal of the transistor Tr1 and the output terminal of the transistor Tr2 of each pixel 20 are connected. In the signal wiring D, an electrical signal corresponding to the amount of charge accumulated in each pixel 20 flows through the transistor Tr1 or the transistor Tr2 in accordance with the switching state of the transistor Tr1 and the switching state of the transistor Tr2.

  In the present embodiment, as shown in FIG. 2, the arrangement relationship of the transistor Tr1, the transistor Tr2, and the sensor unit 12 is inverted between the even lines and the odd lines of the control wiring G (upside down in FIG. 2).

  The control wiring G is connected to the first control terminal 14, the control wiring M is connected to the second control terminal 16, and the signal wiring D is connected to the signal terminal 18. In the present embodiment, the first control terminal 14 and the second control terminal 16 are provided on opposite sides of the radiation detection element substrate 10.

  In the radiation detection element substrate 10 according to the present exemplary embodiment, imaging with two different resolutions is possible. In the following, the higher resolution of the two resolutions is referred to as high resolution, and the lower resolution is referred to as low resolution.

  That is, when performing high-resolution imaging, a control signal is input to the control wiring M via the second control terminal 16 so as to turn off the transistor Tr2, while sequentially turning on the transistor Tr1. A control signal is input to the control wiring G via the first control terminal 14. In the pixel 20 in which the transistor Tr1 is on, the charge is read from the sensor unit 12, and the charge of one pixel 20 is sequentially output to the signal wiring D.

  When performing low-resolution imaging, a control signal is input to the control wiring G via the first control terminal 14 so as to turn off the transistor Tr1, while sequentially turning on each transistor Tr2. A control signal is input to the control wiring M via the second control terminal 16. In the pixel 20 in which the transistor Tr2 is turned on, the charge is read from the sensor unit 12, and the charge is output to the signal wiring D. Here, the charges output to one signal wiring D are output collectively from the charges of the four pixels 20, and the resolution is lower than when the transistor Tr2 is turned off and the transistor Tr1 is turned on. .

  By the way, in the radiation detection element substrate 10, since a plurality of transistors Tr1 and Tr2 are provided in one pixel 20, a conventional inspection apparatus that inspects a radiation detection element substrate in which one transistor 20 is provided. Then, you can not perform the inspection.

  Here, a conventional inspection apparatus for inspecting a conventional radiation detection element substrate in which one transistor is provided in one pixel will be described. FIG. 3 is a diagram showing a conventional inspection apparatus for inspecting a radiation detection element substrate in which one transistor is provided in one pixel. In this embodiment, a case where a continuity test is performed will be described in detail as a specific example of the test.

  As shown in FIG. 3, the conventional inspection apparatus includes a first probe unit 30 for operating the control wiring, a second probe unit 32 for reading an image from the signal wiring, the first probe unit 30 and the second probe. And a control unit 34 for controlling the unit 32.

  Each of the first probe unit 30 and the second probe unit 32 includes a needle-like contact terminal (probe pin), and the first probe unit 30 is used as a control terminal GT for selecting a pixel for reading out the charge of the radiation detection element substrate. The second probe unit is operated by bringing it into contact with the signal terminal DT for reading out the charge of the radiation detection element substrate.

  The inspection sequence applies a gate-on voltage for each row from the first probe unit 30 to turn on a transistor that selects a pixel from which charges are read, and applies a constant voltage from the second probe unit 32 to charge each pixel 20. To accumulate. Next, a gate-off voltage is applied from the first probe unit 30 to turn off the transistor and hold it for a certain time. Subsequently, a gate-on voltage is applied to each row from the first probe unit 30 to turn on the transistors, and the second probe unit 32 reads an image and outputs a two-dimensional image to the control unit 34. Thereby, defects such as point defects and line defects are determined by the control unit 34 from the two-dimensional image.

  When the radiation detection element substrate 10 has a plurality of transistors in one pixel as in the present embodiment, a probe unit for the second control terminal 16 is required, but a probe for the second control terminal 16 is required. When the inspection apparatus is operated in the above-described conventional inspection sequence without preparing a unit, the accumulated charge leaks through the transistor Tr2 while the transistor Tr1 is turned off and held for a certain time. Even if it is not a defect, it is determined as a defect.

  Therefore, the radiation detection element substrate 10 according to the present exemplary embodiment extends the control wiring M to a region outside the first region 11 that is a region surrounded by a one-dot chain line shown in FIG. An inspection connection wiring portion 22 is provided. Specifically, as shown in FIG. 4, the radiation detection element substrate 10 according to the present exemplary embodiment is adjacent to the first region 11, and includes a second region 21 including an inspection connection wiring portion 22 and a connection terminal 24. It has. When conducting a continuity test, a gate-off voltage is collectively applied to the connection terminals 24 connected to the test connection wiring section 22. In the present embodiment, “adjacent” includes not only the case where the adjacent positions are arranged without any gap but also the case where the adjacent positions are arranged with a gap. For example, another region may be provided between the first region 11 and the second region 21. The “adjacent position” refers to a position where at least a part of one side of the first region 11 and at least a part of one side of the second region 21 face each other.

  That is, all the transistors Tr2 are turned off by collectively applying the gate-off voltage to the connection terminals 24. Therefore, the accumulated charges are kept while the transistors Tr1 are turned off and held for a certain time. Does not leak through the transistor Tr2. Therefore, it is possible to detect a pixel defect by a conventional inspection sequence. The connection terminal 24 may be a terminal having a larger area than at least one of the first control terminal 14 and the second control terminal 16. Thereby, it is possible to apply the gate-off voltage in a lump. Further, it is possible to easily contact the connection terminal 24 with a simple probe pin that does not require high accuracy, and an inspection jig can be made at low cost.

  In addition, since the inspection connection wiring portion 22 and the connection terminal 24 are provided in the second region outside the first region 11, after the continuity inspection is completed, the inspection connection wiring portion 22 and the connection terminal 24 are removed by performing separation or the like. No problem. Specifically, for example, a glass substrate (manufacturing) is divided into a first region 11 and a second region 21 as a first region as a region of the mounting substrate and a second region as a region outside the mounting substrate. Connect and configure. Thus, after the continuity test is completed by dividing the first area and the second area in the divided areas, the second area 21 is removed by cutting or the like to be the size of the substrate when mounted.

  As shown in FIG. 4, the connection terminals 24 may be arranged in the second region 21 outside the first region 11 side by side with the second control terminal 16 in the first region 11. Further, the connection terminals 24 may be arranged in the second region 21 outside the first region 11 along with the first control terminals 14 in the first region 11. Accordingly, it is possible to apply the gate-off voltage using the empty terminal of the probe unit that is brought into contact with the first control terminal 14 or the second control terminal 16 when performing inspection.

  FIG. 5 is a diagram illustrating an example of an inspection apparatus that performs continuity inspection of the radiation detection element substrate 10 according to the present embodiment.

  The inspection apparatus 50 for inspecting the radiation detection element substrate 10 according to the present embodiment applies a fixed potential (gate off voltage) to the connection terminal 24 of the inspection connection wiring portion 22 with respect to the conventional inspection apparatus shown in FIG. A fixed potential applying unit 36 is added.

  As a method of applying a fixed potential by the fixed potential application unit 36, when the first probe unit 30 or the second probe unit 32 of the conventional inspection apparatus has an empty terminal, a gate-off voltage is applied using the empty terminal. Therefore, the conventional inspection apparatus can be used as it is.

  When the first probe unit 30 and the second probe unit 32 do not have a vacant terminal, a conventional power supply can be added as the fixed potential application unit 36 to use a conventional inspection apparatus as it is.

  In FIG. 5, in order to simplify the illustration, a state in which a fixed potential is directly applied from the fixed potential application unit 36 to the connection terminal 24 is not illustrated.

  Next, an inspection sequence by the inspection apparatus 50 that performs the continuity inspection of the radiation detection element substrate 10 according to the present embodiment will be described. FIG. 6 is a timing chart showing an inspection sequence by the inspection apparatus 50 that conducts a continuity inspection of the radiation detection element substrate 10 according to the present embodiment.

  In the present embodiment, the first probe unit 30 is brought into contact with the first control terminal 14 of the radiation detection element substrate 10, and the second probe unit is brought into contact with the signal terminal 18 of the radiation detection element substrate 10. Is connected to the connection terminal 24 of the connection wiring portion 22 for inspection and operated. In other words, the continuity test is performed in a state in which gate-off voltages (fixed potentials that do not change as shown in FIG. 6) are collectively applied from the fixed potential application unit 36 to all the second control terminals 16 through the inspection connection wiring unit 22. Is done.

  In the present embodiment, a gate-off voltage is applied to all the second control terminals 16 at once, whereby the transistor Tr2 is turned off and invalidated, and then a continuity test is performed. The continuity test is performed in the same manner as the conventional test sequence described above.

  That is, the gate-on voltage is applied to each row from the first probe unit 30 to turn on the transistor Tr1, and a constant voltage is applied from the second probe unit 32 to accumulate charges in each pixel 20. Next, a gate-off voltage is applied from the first probe unit 30 to turn off the transistor Tr1 and hold it for a certain time. Subsequently, a gate-on voltage is applied to each row from the first probe unit 30 to turn on the transistor Tr1, and image reading is performed by the second probe unit 32 to output a two-dimensional image to the control unit 34. Thereby, defects such as point defects and line defects are determined by the control unit 34 from the two-dimensional image.

  Here, when a defect such as a disconnection or a short circuit occurs in the signal wiring D, the control wiring G, and the transistor Tr1, a defective portion can be identified from the two-dimensional image as in the conventional inspection. In addition, even when a defect such as a disconnection or a short circuit occurs in the control wiring M or the transistor Tr2, the transistor Tr2 cannot be operated normally, so that the signal of the related pixel cannot be read accurately and output. The defect can be detected from the two-dimensional image.

  In the prior art, a large amount of cost was generated for the production of the dedicated probe unit and the development of the control software, which had become a bottleneck in the development of the substrate. By doing so, it becomes possible to divert the conventional inspection apparatus as it is, and a significant cost reduction can be realized.

  In the present embodiment, the radiation detection element substrate 10 having a resolution change transistor in one pixel has been described as an example. However, the function of the transistor connected to the pixel is not limited. A device having a transistor with a function (for example, a reset transistor for charge resetting or a storage transistor for charge storage) may be applied.

  In this embodiment, an example in which a plurality of transistors are connected to all the pixels has been described. However, a plurality of transistors need not be connected to all the pixels, and only at least one specific pixel is a transistor. However, it may be applied to a radiation detection element substrate in which two transistors are provided and one transistor is provided for other pixels. Further, there is no upper limit to the number of transistors connected to one pixel, and it may be three or more. For example, as shown in FIG. 7, a reset transistor TrA that resets the charge of the sensor unit 12, a storage transistor TrB that stores the charge generated in the sensor unit, a read transistor TrC that reads the charge stored in the storage transistor, May be applied to a radiation detection element substrate having one pixel. However, when three or more transistors are provided, a gate-off signal is collectively applied to the transistors other than the 1 × 1 image reading transistor when conducting the continuity test.

  Further, in the above embodiment, when all the pixels are provided with the transistor Tr2 and read out at a low resolution, the transistor Tr1 is turned off and the transistor Tr2 is turned on to read out the four pixels all together. Although an example of performing reading has been described, the resolution conversion method by the transistor Tr2 is not limited to this. For example, the transistor Tr2 is provided for each of a plurality of pixels, such as one for every four pixels, instead of all the pixels, and the transistor Tr1 is turned off and the transistor Tr2 is turned on to perform low-resolution reading. You may do it.

  Further, in the present embodiment, the example in which the first control terminal 14 and the second control terminal 16 are arranged on two opposite sides of the first region 11 has been described for the sake of simple description. Instead, the first control terminal 14 and the second control terminal 16 may be arranged on one side.

  Further, the arrangement of the connection terminals 24 is not limited to the arrangement described in the present embodiment. It is only necessary that the inspection connection wiring portion 22 connected to the connection terminal 24 is provided in the second region 21, and the arrangement of the connection terminals 24 is not limited. For example, the connection terminal 24 may be disposed in the first region 11. FIG. 8 shows a configuration diagram of an example of the radiation detection element substrate 10 when the first region 11 includes the connection terminal 24. In the radiation detection element substrate 10 shown in FIG. 8, after the inspection is completed, the second region 21 is removed, whereby the inspection connection wiring portion 22 is removed, but the connection terminal 24 is connected to the first region 11. Because it is contained in, it remains without being removed.

  Moreover, in this Embodiment, although the inspection apparatus which performs a conduction | electrical_connection inspection was demonstrated in detail as a test | inspection performed with respect to the radiation detection element board | substrate 10, it is not limited to this, and this embodiment also applies to an inspection apparatus that performs other inspections. Needless to say, the present invention can also be applied to an inspection apparatus that performs a function inspection (function test), as in the embodiment.

  Further, in the radiation detection element substrate 10 after the removal of the second region 21 shown in FIG. 2, the control wiring M is shown to be provided up to the second control terminal 16, but the state of the control wiring M is The state is not limited to that shown in FIG. For example, as described above, the control wiring M passes through the second control terminal 16 and extends to the outside of the first region 11, that is, to the second region 21, so that even after the second region 21 is removed, 2 It may be in a state of passing through the control terminal 16 and extending to the edge of the first region 11. In this case, it is preferable to process the end portion of the control wiring M so that the end portion of the extended control wiring M is not exposed to the cross section (separated surface) of the first region 11.

  Moreover, the radiation in this Embodiment is not specifically limited, X-rays, a gamma ray, etc. can be applied.

  In addition, the configuration, operation, and the like of the radiation detection element substrate 10 and the like described in this embodiment are merely examples, and it goes without saying that they can be changed according to the situation without departing from the gist of the present invention.

DESCRIPTION OF SYMBOLS 10 Radiation detection element board | substrate 11 1st area | region 12 Sensor part 14 1st control terminal 16 2nd control terminal 18 Signal terminal 20 Pixel 21 2nd area | region 22 Connection wiring part 24 for inspection 24 Connection terminal 30 1st probe unit 32 2nd probe unit 34 control unit 36 fixed potential application section D signal wiring G, M control wiring Tr1, Tr2 transistor TrA reset transistor TrB storage transistor TrC read transistor

Claims (11)

A plurality of first switching elements provided corresponding to each one of the plurality of pixels and for reading out charges generated in response to radiation;
One or more second switching elements provided corresponding to one or more pixels of the plurality of pixels and having a use different from the use of the first switching element;
A first control terminal connected to the first switching element via a first control wiring connected to a control end of the first switching element;
A second control terminal connected to the second switching element via a second control wiring connected to a control end of the second switching element;
And a first region including a signal terminal connected to the first switching element via a signal wiring connected to an output end of the first switching element;
A second region including a connection wiring portion for inspection connected to the second control terminal and provided in a portion removed after completion of the inspection adjacent to the first region;
A radiation detection element substrate.   The radiation detection element substrate according to claim 1, wherein the first control terminal and the second control terminal are arranged on opposite sides.   The radiation detection element substrate according to claim 1, wherein the first region or the second region further includes a connection terminal connected to the inspection connection wiring part.   The radiation detection element substrate according to claim 3, wherein the connection terminal is a terminal having a larger area than at least one of the first control terminal and the second control terminal.   The radiation detection element substrate according to claim 1, wherein the second switching element is used for resolution conversion.   The radiation detection element substrate according to claim 1, wherein the second switching element is for resetting the electric charge.   The radiation detecting element substrate according to claim 1, wherein the second switching element is for accumulating the electric charge.   The radiation detection element substrate according to claim 1, wherein a voltage for turning off the second switching element is applied to the inspection connection wiring portion when the inspection is performed. A plurality of first switching elements for reading out charges corresponding to one pixel generated in response to radiation, provided corresponding to one or more of the plurality of pixels, and uses of the first switching element One or more second switching elements for different uses, a first control terminal connected to the first switching element via a first control wiring connected to a control end of the first switching element, the second switching element The second switching terminal connected to the second switching element via a second control wiring connected to the control terminal of the first switching element and the first switching via a signal wiring connected to the output terminal of the first switching element Provided in a first region including a signal terminal connected to the element and a portion adjacent to the first region to be removed after completion of the inspection, and connected to the second control terminal A first probe unit to be brought into contact with the first control terminal in the radiation detecting element substrate and a second region including a test connection wiring portion,
A second probe unit for contacting the signal terminal;
A voltage application unit for applying a voltage to turn off the second switching element to the inspection connection wiring unit;
An inspection apparatus for a radiation detection element substrate, comprising:   The radiation detection element substrate inspection apparatus according to claim 9, wherein the voltage application unit applies a voltage for turning off the second switching element from an empty terminal of the first probe unit or the second probe unit. A plurality of first switching elements for reading out charges corresponding to one pixel generated in response to radiation, provided corresponding to one or more of the plurality of pixels, and uses of the first switching element One or more second switching elements for different uses, a first control terminal connected to the first switching element via a first control wiring connected to a control end of the first switching element, the second switching element The second switching terminal connected to the second switching element via a second control wiring connected to the control terminal of the first switching element and the first switching via a signal wiring connected to the output terminal of the first switching element Provided in a first region including a signal terminal connected to the element and a portion adjacent to the first region to be removed after completion of the inspection, and connected to the second control terminal A second region including a test connection wiring part, the test connection wiring part in the radiation detection element substrate provided with a, in a state of applying a voltage for turning off the second switching element,
A voltage applying step of applying a voltage for turning on the first switching element from the first control terminal;
An accumulation step of accumulating charges in each pixel by applying a constant voltage from the signal terminal in a state where a voltage for turning on the first switching element is applied in the voltage application step;
A holding step of applying a voltage for turning off the first switching element from the first control terminal to hold the charge accumulation of each pixel in the accumulation step for a certain period of time;
A step of applying a voltage for turning on the first switching element from the first control terminal, and reading out the charge held in the holding step from the signal terminal;
A method for inspecting a radiation detection element substrate, wherein the inspection of the radiation detection element substrate is carried out.

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