JP2008227264A5 - - Google Patents
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- Publication number
- JP2008227264A5 JP2008227264A5 JP2007065074A JP2007065074A JP2008227264A5 JP 2008227264 A5 JP2008227264 A5 JP 2008227264A5 JP 2007065074 A JP2007065074 A JP 2007065074A JP 2007065074 A JP2007065074 A JP 2007065074A JP 2008227264 A5 JP2008227264 A5 JP 2008227264A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- processing chamber
- moving
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 20
- 238000001816 cooling Methods 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 3
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Claims (2)
前記処理室内にある前記基板を加熱する加熱手段と、
前記処理室内に処理ガスを供給するガス供給系と、
前記処理室内の雰囲気を排気する排気系と、
前記処理室と開口を介して気密に連通するように配置される予備室と、
前記基板を載置すると共に、前記処理室と前記予備室との間で前記開口を経て前記基板を移動させる基板載置手段と、
前記予備室内に不活性ガスを供給する不活性ガス供給手段と、
前記予備室内の雰囲気を排気する予備室排気手段と、
前記予備室内に配置され、予備室内のガス流れの乱れを抑制するための整流手段と、
前記整流手段を前記予備室内の基板冷却時位置とそれ以外の時の位置との間で移動させるための移動手段と、を備え、
前記移動手段は、熱処理後の基板を前記予備室にて冷却する際、前記整流手段を前記基板冷却時位置であって、前記基板の周辺の位置に移動させることを特徴とする基板処理装置。 A processing chamber for heat-treating the substrate;
Heating means for heating the substrate in the processing chamber;
A gas supply system for supplying processing gas into the processing chamber,
And the exhaust system exhaust the atmosphere of the processing chamber,
A preliminary chamber arranged to communicate with the processing chamber in an airtight manner through an opening;
A substrate mounting means for mounting the substrate and moving the substrate through the opening between the processing chamber and the preliminary chamber;
An inert gas supply means for supplying an inert gas into the preliminary chamber;
Preliminary chamber exhaust means for exhausting the atmosphere in the preliminary chamber;
A rectifying means disposed in the spare chamber for suppressing disturbance of gas flow in the spare chamber;
A moving means for moving the rectifying means between the substrate cooling position in the preliminary chamber and a position at other times; and
The substrate processing apparatus, wherein the moving means moves the rectifying means to a position around the substrate at the time of cooling the substrate when cooling the substrate after the heat treatment in the preliminary chamber.
前記処理室内に処理ガスを供給しつつ排気し、該処理室内にある基板を加熱処理する工程と、Evacuating while supplying a processing gas into the processing chamber, and heat-treating the substrate in the processing chamber;
前記基板載置手段により前記処理室の開口を経て前記処理室から該処理室と気密に連通する予備室へ前記基板を移動する工程と、Moving the substrate from the processing chamber to an auxiliary chamber in airtight communication with the processing chamber through the opening of the processing chamber by the substrate mounting means;
移動手段により前記予備室内に配置された整流手段を、基板冷却時位置以外から基板冷却位置としての前記基板の周辺の位置へ移動させ、前記予備室内に供給された不活性ガスのガス流れの乱れを前記整流手段により抑制しつつ前記基板を冷却する工程とをDisplacement of the flow of the inert gas supplied into the preliminary chamber by moving the rectifying unit arranged in the preliminary chamber by the moving unit from a position other than the substrate cooling position to a position around the substrate as the substrate cooling position. Cooling the substrate while suppressing the rectification means.
有することを特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007065074A JP2008227264A (en) | 2007-03-14 | 2007-03-14 | Substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007065074A JP2008227264A (en) | 2007-03-14 | 2007-03-14 | Substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008227264A JP2008227264A (en) | 2008-09-25 |
| JP2008227264A5 true JP2008227264A5 (en) | 2010-04-30 |
Family
ID=39845511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007065074A Pending JP2008227264A (en) | 2007-03-14 | 2007-03-14 | Substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008227264A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4985729B2 (en) | 2008-09-11 | 2012-07-25 | 株式会社デンソー | Valve timing adjustment device |
| JP2010231572A (en) * | 2009-03-27 | 2010-10-14 | Sumitomo Heavy Ind Ltd | Chamber pressure regulating device |
| KR102683732B1 (en) * | 2021-04-01 | 2024-07-12 | 세메스 주식회사 | Support unit and apparatus for treating substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3292540B2 (en) * | 1993-03-03 | 2002-06-17 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JPH1022292A (en) * | 1996-07-08 | 1998-01-23 | Sony Corp | Heat treatment apparatus and heat treatment method using the same |
| JPH11204447A (en) * | 1998-01-12 | 1999-07-30 | Tokyo Electron Ltd | Single wafer heat treating system |
| JP2001068425A (en) * | 1999-08-31 | 2001-03-16 | Hitachi Kokusai Electric Inc | Semiconductor heat treatment apparatus and method |
-
2007
- 2007-03-14 JP JP2007065074A patent/JP2008227264A/en active Pending
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