JP2008185378A - 赤外ガラス蛍光体及び半導体発光素子で構成した光干渉断層撮影装置用光源。 - Google Patents
赤外ガラス蛍光体及び半導体発光素子で構成した光干渉断層撮影装置用光源。 Download PDFInfo
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Abstract
【解決手段】半値幅の広い赤外ガラス蛍光体と半導体発光素子とを組み合わせることにより、光干渉断層撮影装置用光源に関する上記課題を解決する。具体的には、赤外ガラス蛍光体と、半導体発光素子と、前記赤外ガラス蛍光体を前記半導体発光素子の発光面に配置する。赤外ガラス蛍光体中にYbイオンが含まれていることが望ましい。また、赤外蛍光体中にYbイオンと共にNdイオンが含まれていることが、さらに望ましい。
【選択図】 図2
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Claims (9)
- 赤外ガラス蛍光体と、半導体発光素子と、前記赤外ガラス蛍光体を前記半導体発光素子の発光面に配置することを特徴とする光干渉断層撮影装置用光源。
- 前記赤外ガラス蛍光体中に、Ybイオンが含まれていることを特徴とする請求項1記載の光干渉断層撮影装置用光源。
- 前記赤外ガラス蛍光体中に、YbイオンとNdイオンが含まれていることを特徴とする請求項1記載の光干渉断層撮影装置用光源。
- 前記赤外ガラス蛍光体は、Yb2O3を含むことを特徴とする請求項2記載の光干渉断層撮影装置用光源。
- 前記赤外ガラス蛍光体は、Yb2O3及びNd2O3を含むことを特徴とする請求項3記載の光干渉断層撮影装置用光源。
- 前記赤外ガラス蛍光体は、Bi2O3及びB2O3からなるガラスであることを特徴とする請求項1から5のいずれかに記載の光干渉断層撮影装置用光源。
- 前記半導体発光素子は、発光ダイオードであることを特徴とする請求項1から6のいずれかに記載の光干渉断層撮影装置用光源。
- 前記半導体発光素子は、スーパールミネッセントダイオードであることを特徴とする請求項1から6のいずれかに記載の光干渉断層撮影装置用光源。
- 前記半導体発光素子は、レーザダイオードであることを特徴とする請求項1から6のいずれかに記載の光干渉断層撮影装置用光源。
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011247662A (ja) * | 2010-05-25 | 2011-12-08 | Nagoya Univ | 生体組織検査装置及び検査方法 |
| WO2012008325A1 (ja) * | 2010-07-12 | 2012-01-19 | 国立大学法人名古屋大学 | 広帯域赤外光放射装置 |
| US8405111B2 (en) | 2008-11-13 | 2013-03-26 | National University Corporation Nagoya University | Semiconductor light-emitting device with sealing material including a phosphor |
| JP2013162978A (ja) * | 2012-02-13 | 2013-08-22 | Aichi Prefecture | 検出対象部位の検出システム |
| WO2014112607A1 (ja) * | 2013-01-21 | 2014-07-24 | 国立大学法人名古屋大学 | 細胞製剤及び細胞の活性を高める方法 |
| JP2015086321A (ja) * | 2013-10-31 | 2015-05-07 | 独立行政法人産業技術総合研究所 | 近赤外蓄光性蛍光材料、及び近赤外蓄光性蛍光体、並びに近赤外蓄光性蛍光材料の製造方法 |
| JP2015086327A (ja) * | 2013-10-31 | 2015-05-07 | 独立行政法人産業技術総合研究所 | 応力発光材料、応力発光体、及び、応力発光材料の製造方法 |
| WO2017159175A1 (ja) | 2016-03-14 | 2017-09-21 | 三井金属鉱業株式会社 | 蛍光体 |
| US10538679B2 (en) | 2015-03-02 | 2020-01-21 | Mitsui Mining & Smelting Co., Ltd. | Phosphor |
| KR20220036409A (ko) * | 2020-09-14 | 2022-03-23 | 주식회사 올릭스 | 파장 가변 초광대역 근적외 발광 장치 |
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| JP2001255265A (ja) * | 2000-03-10 | 2001-09-21 | Fuji Photo Film Co Ltd | 光断層画像化装置 |
| JP2003243724A (ja) * | 2002-02-14 | 2003-08-29 | Matsushita Electric Works Ltd | 発光装置 |
| JP2006083259A (ja) * | 2004-09-15 | 2006-03-30 | Sharp Corp | 蛍光体およびその製造方法ならびに発光装置 |
| JP2006213910A (ja) * | 2005-01-06 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 酸窒化物蛍光体及び発光装置 |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8405111B2 (en) | 2008-11-13 | 2013-03-26 | National University Corporation Nagoya University | Semiconductor light-emitting device with sealing material including a phosphor |
| JP2011247662A (ja) * | 2010-05-25 | 2011-12-08 | Nagoya Univ | 生体組織検査装置及び検査方法 |
| US9062853B2 (en) | 2010-07-12 | 2015-06-23 | National University Corporation Nagoya University | Broadband infrared light emitting device |
| WO2012008325A1 (ja) * | 2010-07-12 | 2012-01-19 | 国立大学法人名古屋大学 | 広帯域赤外光放射装置 |
| JP5000028B2 (ja) * | 2010-07-12 | 2012-08-15 | 国立大学法人名古屋大学 | 広帯域赤外光放射装置 |
| JP2013162978A (ja) * | 2012-02-13 | 2013-08-22 | Aichi Prefecture | 検出対象部位の検出システム |
| WO2014112607A1 (ja) * | 2013-01-21 | 2014-07-24 | 国立大学法人名古屋大学 | 細胞製剤及び細胞の活性を高める方法 |
| JP2015086321A (ja) * | 2013-10-31 | 2015-05-07 | 独立行政法人産業技術総合研究所 | 近赤外蓄光性蛍光材料、及び近赤外蓄光性蛍光体、並びに近赤外蓄光性蛍光材料の製造方法 |
| JP2015086327A (ja) * | 2013-10-31 | 2015-05-07 | 独立行政法人産業技術総合研究所 | 応力発光材料、応力発光体、及び、応力発光材料の製造方法 |
| US10538679B2 (en) | 2015-03-02 | 2020-01-21 | Mitsui Mining & Smelting Co., Ltd. | Phosphor |
| WO2017159175A1 (ja) | 2016-03-14 | 2017-09-21 | 三井金属鉱業株式会社 | 蛍光体 |
| KR20180098660A (ko) | 2016-03-14 | 2018-09-04 | 미쓰이금속광업주식회사 | 형광체 |
| US11292964B2 (en) | 2016-03-14 | 2022-04-05 | Mitsui Mining & Smelting Co., Ltd. | Phosphor |
| KR20220036409A (ko) * | 2020-09-14 | 2022-03-23 | 주식회사 올릭스 | 파장 가변 초광대역 근적외 발광 장치 |
| KR102408688B1 (ko) | 2020-09-14 | 2022-06-16 | (주)올릭스 | 파장 가변 초광대역 근적외 발광 장치 |
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