[go: up one dir, main page]

JP2008140840A - Light emitting device and light emitting element - Google Patents

Light emitting device and light emitting element Download PDF

Info

Publication number
JP2008140840A
JP2008140840A JP2006323405A JP2006323405A JP2008140840A JP 2008140840 A JP2008140840 A JP 2008140840A JP 2006323405 A JP2006323405 A JP 2006323405A JP 2006323405 A JP2006323405 A JP 2006323405A JP 2008140840 A JP2008140840 A JP 2008140840A
Authority
JP
Japan
Prior art keywords
light emitting
electrode
wire
light
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006323405A
Other languages
Japanese (ja)
Inventor
Nariaki Komabashiri
成昭 駒走
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2006323405A priority Critical patent/JP2008140840A/en
Publication of JP2008140840A publication Critical patent/JP2008140840A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device and a light-emitting element capable of improving a brightness by efficiently extracting a light radiated from a main light-emitting surface as much as possible. <P>SOLUTION: The light-emitting device 10 has the light-emitting element 1 forming a P electrode 5, a cathode electrode 14a electrically conducted and connected by die-bonding the light-emitting element 1 and a wiring board 11 forming an anode electrode 14b connected to the P electrode 5 by a wire 15 on the main light-emitting surface F of the semiconductor layer 3, forming the semiconductor layer 3 containing a light-emitting layer 32 on a board 2 and mainly radiating the light from the light-emitting layer 32. In the light-emitting device 10, the P electrode 5 is formed so that an external shape is made smaller than a ball bonding section as a result of crushing a contact-bonding ball by forming the P electrode 5 in a circular shape whose diameter is identical to that of the contact-bonding ball in wiring bonding. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、基板に発光層を含む半導体層が形成され、この半導体層の主発光面上にワイヤボンディングされるボンディング電極が形成された発光装置および発光素子に関する。   The present invention relates to a light emitting device and a light emitting element in which a semiconductor layer including a light emitting layer is formed on a substrate, and a bonding electrode to be wire bonded is formed on a main light emitting surface of the semiconductor layer.

外部からワイヤを介して電源が供給される従来の発光素子は、基板に積層された発光層を含む半導体層上に、ワイヤを接続するためのワイヤボンディング電極が形成されている。例えば、特許文献１に記載の半導体発光素子は、化合物半導体基板の上に、第１の層から第４の層までの４層としたボンディング電極が設けられ、この第４の層上にワイヤがボンディングされるものである。
特開平１０−１３５５１８号公報 In a conventional light emitting element to which power is supplied from the outside via a wire, a wire bonding electrode for connecting a wire is formed on a semiconductor layer including a light emitting layer stacked on a substrate. For example, in the semiconductor light emitting device described in Patent Document 1, bonding electrodes having four layers from a first layer to a fourth layer are provided on a compound semiconductor substrate, and wires are formed on the fourth layer. It is to be bonded.
Japanese Patent Laid-Open No. 10-135518

半導体層上にワイヤボンディング電極が形成された従来の発光素子は、このワイヤボンディング電極によって発光層からの光の進行が阻害されるため、光取り出し効率の低下の要因となる。従って、発光層からの光をできるだけ主発光面から多く取り出すことができれば、より明るい発光素子を得ることができる。   In the conventional light emitting device in which the wire bonding electrode is formed on the semiconductor layer, the progress of light from the light emitting layer is hindered by the wire bonding electrode, which causes a decrease in light extraction efficiency. Therefore, a brighter light emitting element can be obtained if as much light as possible from the light emitting layer can be extracted from the main light emitting surface.

そこで本発明は、主発光面から出射される光を、できるだけ効率よく取り出すことで、輝度向上を図ることが可能な発光装置および発光素子を提供することを目的とする。   Therefore, an object of the present invention is to provide a light emitting device and a light emitting element that can improve luminance by extracting light emitted from a main light emitting surface as efficiently as possible.

本発明の発光装置は、基板に、発光層を含む半導体層が形成され、前記発光層からの光が主に出射する前記半導体層の主発光面上に、ワイヤボンディング電極が形成された発光素子と、前記ワイヤボンディング電極にワイヤで接続される電極が形成された配線基板とを備えた発光装置において、前記ワイヤボンディング電極は、ワイヤボンディングの際に押し潰されたボールボンディング部分より、外形がほぼ等しいか、または小さいことを特徴とする。   In the light emitting device of the present invention, a semiconductor layer including a light emitting layer is formed on a substrate, and a light emitting element in which a wire bonding electrode is formed on a main light emitting surface of the semiconductor layer from which light from the light emitting layer is mainly emitted. And a wiring board on which an electrode connected to the wire bonding electrode with a wire is formed, the wire bonding electrode has an outer shape substantially smaller than a ball bonding portion crushed during wire bonding. It is characterized by being equal or smaller.

また、本発明の発光素子は、基板に、発光層を含む半導体層が形成され、前記発光層からの光が主に出射する前記半導体層の主発光面上に、ワイヤを接続するためのワイヤボンディング電極が形成された発光素子において、前記ワイヤボンディング電極は、ワイヤボンディングの際に押し潰されたボールボンディング部分より、外形がほぼ等しいか、または小さいことを特徴とする。   In the light emitting device of the present invention, a semiconductor layer including a light emitting layer is formed on a substrate, and a wire for connecting a wire on the main light emitting surface of the semiconductor layer from which light from the light emitting layer is mainly emitted. In the light emitting device in which the bonding electrode is formed, the wire bonding electrode has an outer shape substantially equal to or smaller than a ball bonding portion crushed during wire bonding.

本発明によれば、発光層からの光を、ワイヤボンディング電極がボールボンディング部分よりはみ出すことで阻害してしまうことがないので、主発光面から出射される光を、できるだけ効率よく取り出すことで、輝度向上を図ることが可能である。   According to the present invention, since the light from the light emitting layer is not hindered by the wire bonding electrode protruding from the ball bonding portion, the light emitted from the main light emitting surface can be extracted as efficiently as possible. It is possible to improve luminance.

本願の第１の発明は、基板に、発光層を含む半導体層が形成され、発光層からの光が主に出射する半導体層の主発光面上に、ワイヤボンディング電極が形成された発光素子と、ワイヤボンディング電極にワイヤで接続される電極が形成された配線基板とを備えた発光装置において、ワイヤボンディング電極は、ワイヤボンディングの際に押し潰されたボールボンディング部分より、外形がほぼ等しいか、または小さいことを特徴としたものである。   According to a first aspect of the present invention, there is provided a light emitting device in which a semiconductor layer including a light emitting layer is formed on a substrate, and a wire bonding electrode is formed on a main light emitting surface of the semiconductor layer from which light from the light emitting layer is mainly emitted. In a light emitting device including a wiring substrate on which an electrode connected to a wire bonding electrode by a wire is formed, the wire bonding electrode has a substantially equal outer shape than a ball bonding portion crushed during wire bonding, Or it is characterized by being small.

ワイヤで外部と接続するためのワイヤボンディング電極の外形が、押し潰されたボールボンディング部分より、ほぼ等しいか、または小さいので、ワイヤを主発光面上のワイヤボンディング電極にボンディングしても、発光層からの光の進行を、ワイヤボンディング電極がボールボンディング部分よりはみ出すことで阻害してしまうことがない。   Since the outer shape of the wire bonding electrode for connecting to the outside with a wire is almost equal to or smaller than the crushed ball bonding portion, even if the wire is bonded to the wire bonding electrode on the main light emitting surface, the light emitting layer Is not hindered by the wire bonding electrode protruding from the ball bonding portion.

本願の第２発明は、ワイヤボンディング電極は、円形状に形成されていることを特徴としたものである。   The second invention of the present application is characterized in that the wire bonding electrode is formed in a circular shape.

圧着ボールは球形に形成されているので、押圧されることでできるボールボンディング部分は略円形状に押し潰される。従って、ボールボンディング部分がワイヤボンディング電極の中心から多少ずれても、ワイヤボンディング電極が円形状に形成されていれば、ボールボンディング部分からはみ出し難い。   Since the press-bonded ball is formed in a spherical shape, the ball bonding portion that can be pressed is crushed into a substantially circular shape. Therefore, even if the ball bonding portion is slightly deviated from the center of the wire bonding electrode, it is difficult to protrude from the ball bonding portion if the wire bonding electrode is formed in a circular shape.

本願の第３の発明は、ワイヤボンディング電極の直径は、ワイヤボンディングの際のワイヤ先端に形成される圧着ボールの直径以下であることを特徴としたものである。   The third invention of the present application is characterized in that the diameter of the wire bonding electrode is equal to or smaller than the diameter of the press-bonded ball formed at the wire tip during wire bonding.

圧着ボールは、押し潰されると円形状に広がるように押し潰される。従って、ワイヤボンディング電極が、円形状に形成され、その直径が圧着ボールの直径より小さく形成することで、ワイヤボンディング電極をボールボンディング部分より外形を小さくすることができる。   When the pressure-bonded ball is crushed, it is crushed so as to spread in a circular shape. Accordingly, the wire bonding electrode is formed in a circular shape and the diameter thereof is smaller than the diameter of the press-bonded ball, so that the outer shape of the wire bonding electrode can be made smaller than that of the ball bonding portion.

本願の第４の発明は、ワイヤボンディング電極の直径は、ワイヤの直径以上であることを特徴としたものである。   The fourth invention of the present application is characterized in that the diameter of the wire bonding electrode is equal to or larger than the diameter of the wire.

主発光面から出射される光は、ボンディングされるワイヤによって進行が阻害される。圧着ボールは、ワイヤをボンディングする際のワイヤ先端に設けられるものであるので、少なくともワイヤの直径より圧着ボールの直径の方が大きい。従って、ワイヤボンディング電極の直径を、ワイヤの直径未満としても光の進行には影響しない。また、ワイヤボンディング電極の直径を、ワイヤの直径以上とすることで、接続強度の確保も可能である。   Progress of light emitted from the main light emitting surface is hindered by the wire to be bonded. Since the press-bonded ball is provided at the tip of the wire when bonding the wire, the diameter of the press-bonded ball is at least larger than the diameter of the wire. Therefore, even if the diameter of the wire bonding electrode is less than the diameter of the wire, it does not affect the progress of light. Further, the connection strength can be ensured by setting the diameter of the wire bonding electrode to be equal to or larger than the diameter of the wire.

本願の第５の発明は、基板に、発光層を含む半導体層が形成され、発光層からの光が主に出射する半導体層の主発光面上に、ワイヤを接続するためのワイヤボンディング電極が形成された発光素子において、ワイヤボンディング電極は、ワイヤボンディングの際に押し潰されたボールボンディング部分より、外形がほぼ等しいか、または小さいことを特徴としたものである。   According to a fifth aspect of the present invention, there is provided a wire bonding electrode for connecting a wire on a main light emitting surface of a semiconductor layer in which a semiconductor layer including a light emitting layer is formed on a substrate, and light from the light emitting layer is mainly emitted. In the formed light-emitting element, the wire bonding electrode is characterized in that the outer shape is substantially equal to or smaller than the ball bonding portion crushed during the wire bonding.

ワイヤで外部と接続するためのワイヤボンディング電極の外形が、ワイヤボンディングの際に押し潰されたボールボンディング部分より、ほぼ等しいか、または小さいので、ワイヤを主発光面上のワイヤボンディング電極にボンディングしても、発光層からの光を、ワイヤボンディング電極がボールボンディング部分よりはみ出すことで阻害してしまうことがない。   Since the outer shape of the wire bonding electrode for connecting to the outside with a wire is almost equal to or smaller than the ball bonding portion crushed during wire bonding, the wire is bonded to the wire bonding electrode on the main light emitting surface. However, the light from the light emitting layer is not inhibited by the wire bonding electrode protruding from the ball bonding portion.

本願の第６の発明は、ワイヤボンディング電極は、円形状に形成されていることを特徴としたものである。   The sixth invention of the present application is characterized in that the wire bonding electrode is formed in a circular shape.

圧着ボールは球形に形成されているので、押圧されることでできるボールボンディング部分は略円形状に押し潰される。従って、ボールボンディング部分がワイヤボンディング電極の中心から多少ずれても、ボンディング電極が円形状に形成されていれば、ボールボンディング部分からはみ出し難い。   Since the press-bonded ball is formed in a spherical shape, the ball bonding portion that can be pressed is crushed into a substantially circular shape. Therefore, even if the ball bonding portion is slightly deviated from the center of the wire bonding electrode, it is difficult to protrude from the ball bonding portion if the bonding electrode is formed in a circular shape.

本願の第７の発明は、ワイヤボンディング電極の直径は、ワイヤボンディングの際のワイヤ先端に形成される圧着ボールの直径以下であることを特徴としたものである。   The seventh invention of the present application is characterized in that the diameter of the wire bonding electrode is equal to or smaller than the diameter of the press-bonded ball formed at the tip of the wire at the time of wire bonding.

圧着ボールが押し潰されると円形状に広がるように押し潰される。従って、ワイヤボンディング電極が、円形状に形成され、その直径が圧着ボールの直径より小さく形成することで、ワイヤボンディング電極をボールボンディング部分より外形を小さくすることができる。   When the pressure-bonded ball is crushed, it is crushed so as to spread in a circular shape. Accordingly, the wire bonding electrode is formed in a circular shape and the diameter thereof is smaller than the diameter of the press-bonded ball, so that the outer shape of the wire bonding electrode can be made smaller than that of the ball bonding portion.

本願の第８の発明は、ワイヤボンディング電極の直径は、ワイヤの直径以上であることを特徴としたものである。   The eighth invention of the present application is characterized in that the diameter of the wire bonding electrode is equal to or larger than the diameter of the wire.

主発光面から出射される光は、ボンディングされるワイヤによって進行が阻害される。圧着ボールは、ワイヤをボンディングする際のワイヤ先端に設けられるものであるので、少なくともワイヤの直径より圧着ボールの直径の方が大きい。従って、ワイヤボンディング電極の直径を、ワイヤの直径未満としても光の進行には影響しない。また、ワイヤボンディング電極の直径を、ワイヤの直径以上とすることで、接続強度の確保も可能である。   Progress of light emitted from the main light emitting surface is hindered by the wire to be bonded. Since the press-bonded ball is provided at the tip of the wire when bonding the wire, the diameter of the press-bonded ball is at least larger than the diameter of the wire. Therefore, even if the diameter of the wire bonding electrode is less than the diameter of the wire, it does not affect the progress of light. Further, the connection strength can be ensured by setting the diameter of the wire bonding electrode to be equal to or larger than the diameter of the wire.

（実施の形態）
本発明の実施の形態に係る発光装置および発光素子を、図面に基づいて説明する。図１は、本発明の実施の形態に係る発光装置の側面図である。 (Embodiment)
A light emitting device and a light emitting element according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a side view of a light emitting device according to an embodiment of the present invention.

図１に示すように、発光装置１０は、表面実装用のチップＬＥＤであり、配線基板１１と、封止部１２と、発光素子１とを備えている。   As shown in FIG. 1, the light-emitting device 10 is a surface-mounted chip LED, and includes a wiring board 11, a sealing portion 12, and the light-emitting element 1.

配線基板１１は、絶縁基板１３に発光素子１へ電源を供給する電極１４が形成されている。絶縁基板１３は、例えば、ガラスエポキシ系樹脂、またはＢＴレジン（ビスマレイミドトリアジン樹脂系の熱硬化樹脂）で形成されている。電極１４は、カソード電極１４ａと、アノード電極１４ｂとを備えている。配線基板１１は、絶縁基板１３の一方の端部に一方の電極となるカソード電極１４ａが、他方の端部に他方の電極となるアノード電極１４ｂが、それぞれ断面コ字状に形成されている。カソード電極１４ａには発光素子１がダイボンドされ、アノード電極１４ｂには発光素子１と接続するワイヤ１５がワイヤボンディングされている。   In the wiring substrate 11, an electrode 14 for supplying power to the light emitting element 1 is formed on the insulating substrate 13. The insulating substrate 13 is made of, for example, glass epoxy resin or BT resin (bismaleimide triazine resin thermosetting resin). The electrode 14 includes a cathode electrode 14a and an anode electrode 14b. The wiring substrate 11 has a cathode electrode 14a as one electrode at one end of the insulating substrate 13 and an anode electrode 14b as the other electrode at the other end in a U-shaped cross section. The light emitting element 1 is die-bonded to the cathode electrode 14a, and the wire 15 connected to the light emitting element 1 is wire bonded to the anode electrode 14b.

ワイヤ１５は、Ａｕ製の金属細線であり、発光素子１側にファーストボンド、アノード電極１４ｂにセカンドボンドされている。   The wire 15 is a fine metal wire made of Au, and is first bonded to the light emitting element 1 side and second bonded to the anode electrode 14b.

発光素子１が搭載されている配線基板１１の搭載面Ｓ１の反対側となる接続面Ｓ２には、カソード電極１４ａおよびアノード電極１４ｂの短絡や保護を目的として、レジスト膜１６が形成されている。   A resist film 16 is formed on the connection surface S2 opposite to the mounting surface S1 of the wiring substrate 11 on which the light emitting element 1 is mounted for the purpose of short-circuiting and protecting the cathode electrode 14a and the anode electrode 14b.

封止部１２は、エポキシ系樹脂で形成されている。この封止部１２には、発光素子１からの光を波長変換して補色となる色を発光する蛍光体を含有させていてもよい。発光素子１が青色に発光するものであれば、蛍光体としては黄色に波長変換するものを使用することで、封止部１２の表面を、発光素子１からの青色と波長変換された黄色とが混色して白色に発光させることができる。   The sealing part 12 is formed of an epoxy resin. The sealing portion 12 may contain a phosphor that emits a complementary color by converting the wavelength of light from the light emitting element 1. If the light-emitting element 1 emits blue light, the surface of the sealing portion 12 is converted into blue from the light-emitting element 1 and yellow converted in wavelength by using a phosphor that converts the wavelength to yellow. Can be mixed to emit white light.

発光素子１は、例えば、青色に発光する半導体発光素子とすることができる。ここで、本実施の形態に係る発光素子１の構成について、図２および図３に基づいて詳細に説明する。図２は、本発明の実施の形態に係る発光素子の側面図である。図３は、図２に示す発光素子の平面図である。   The light emitting element 1 can be, for example, a semiconductor light emitting element that emits blue light. Here, the configuration of the light-emitting element 1 according to the present embodiment will be described in detail with reference to FIGS. FIG. 2 is a side view of the light emitting device according to the embodiment of the present invention. FIG. 3 is a plan view of the light emitting device shown in FIG.

図２および図３に示すように、発光素子１は、基板２と、半導体層３と、ｎ電極４と、ｐ電極５とを備えている。基板２は、周囲面の中腹部に段部２ａが設けられ、平面視して一辺が約３５０μｍの正方形状に形成されている。基板２は、導電性を有しており、例えば、ＧａＮ，ＳｉＣ，ＧａＡｓやＧａＰなどで形成することができる。   As shown in FIGS. 2 and 3, the light emitting element 1 includes a substrate 2, a semiconductor layer 3, an n electrode 4, and a p electrode 5. The substrate 2 is provided with a stepped portion 2a in the middle portion of the peripheral surface, and is formed in a square shape having a side of about 350 μm in plan view. The substrate 2 has conductivity, and can be formed of, for example, GaN, SiC, GaAs, GaP, or the like.

半導体層３は、ｎ層３１と、発光層３２と、ｐ層３３とが、基板２に積層されることで形成されている。ｎ層３１は、基板２に、例えばＧａＮやＡｌＧａＮ等を積層することで形成されたｎ型半導体層である。半導体層３としては、ｎ層３１と基板２の間に、ＧａＮやＩｎＧａＮ等で形成したバッファ層を設けることも可能である。発光層３２は、ｎ層３１に、例えばＩｎＧａＮ等を積層することで形成されている。また、ｐ層３３は、発光層３２にＡｌＧａＮ等を積層することで形成されている。このｐ層３３の上面が、発光層３２からの光を主に出射する主発光面Ｆである。   The semiconductor layer 3 is formed by laminating an n layer 31, a light emitting layer 32, and a p layer 33 on the substrate 2. The n layer 31 is an n-type semiconductor layer formed by laminating GaN, AlGaN, or the like on the substrate 2. As the semiconductor layer 3, a buffer layer formed of GaN, InGaN or the like can be provided between the n layer 31 and the substrate 2. The light emitting layer 32 is formed by laminating, for example, InGaN or the like on the n layer 31. The p layer 33 is formed by stacking AlGaN or the like on the light emitting layer 32. The upper surface of the p layer 33 is a main light emitting surface F that mainly emits light from the light emitting layer 32.

ｎ電極４は、基板２の下面の全体に設けられたダイボンディング電極である。ｎ電極４は、例えば、Ｔｉ／Ａｌ，Ｐｔ／Ｔｉ／ＡｕおよびＡｕ／Ｇｅ／Ｎｉ等の多層構造で形成することができる。   The n electrode 4 is a die bonding electrode provided on the entire lower surface of the substrate 2. The n electrode 4 can be formed with a multilayer structure such as Ti / Al, Pt / Ti / Au, and Au / Ge / Ni.

ｐ電極５は、円形状に形成され、ｐ層３３上の中心部に配置されたワイヤボンディング電極である。ｐ電極５は、例えば、Ｐｔ／Ａｕ，Ｔｉ／Ａｌ，Ｔｉ／ＡｕおよびＡｕ／Ｚｎ等の多層構造で形成することができる。   The p electrode 5 is a wire bonding electrode that is formed in a circular shape and disposed at the center of the p layer 33. The p electrode 5 can be formed with a multilayer structure such as Pt / Au, Ti / Al, Ti / Au, and Au / Zn.

ｐ電極５は、ワイヤ１５をワイヤボンディングする際に、ワイヤ先端に形成される圧着ボールの直径に形成されている。例えば、ワイヤ１５の直径が２５μｍであれば、圧着ボールの直径は、約７０μｍに形成される。従って、圧着ボールの直径が約７０μｍであればｐ電極５の直径を約７０μｍとするのが望ましい。   The p-electrode 5 is formed to have a diameter of a press-bonded ball formed at the wire tip when the wire 15 is wire-bonded. For example, if the diameter of the wire 15 is 25 μm, the diameter of the press-bonded ball is about 70 μm. Therefore, if the diameter of the press-bonded ball is about 70 μm, it is desirable that the diameter of the p-electrode 5 is about 70 μm.

次に、発光装置１０のワイヤ１５の配線方法について、図４から図８に基づいて説明する。図４から図７は、本発明の実施の形態に係る発光装置１０のワイヤの配線状態を示す図である。図８は、発光装置１０にワイヤ１５を接続した状態を示す要部拡大図である。   Next, a wiring method of the wires 15 of the light emitting device 10 will be described with reference to FIGS. 4 to 7 are diagrams showing a wiring state of the wires of the light emitting device 10 according to the embodiment of the present invention. FIG. 8 is an essential part enlarged view showing a state in which the wire 15 is connected to the light emitting device 10.

図４に示すように、キャピラリ２００から突出したワイヤ２１０には、その先端に圧着ボール２１１が設けられている。ワイヤ２１０の直径は約２５μｍで、この圧着ボール２１１の直径は約７０μｍである。   As shown in FIG. 4, the wire 210 protruding from the capillary 200 is provided with a press-bonded ball 211 at the tip thereof. The diameter of the wire 210 is about 25 μm, and the diameter of the press-bonded ball 211 is about 70 μm.

図５に示すように、キャピラリ２００を降下させて、ｐ電極５に圧着ボール２１１をキャピラリ２００の底面２０１で押圧してボンディングすることで圧着ボール２１１が変形したボールボンディング部１１１を形成する。ボールボンディング部１１１は、キャピラリ２００の底面２０１が逆漏斗状に形成されているので、頭頂部にワイヤ２１０が接続された状態の略円錐状に形成されている。   As shown in FIG. 5, the capillary 200 is lowered, and the press-bonded ball 211 is pressed and bonded to the p-electrode 5 by the bottom surface 201 of the capillary 200, thereby forming the ball bonding portion 111 in which the press-bonded ball 211 is deformed. Since the bottom surface 201 of the capillary 200 is formed in a reverse funnel shape, the ball bonding portion 111 is formed in a substantially conical shape with the wire 210 connected to the top of the head.

圧着ボール２１１は球形に形成されているので、押圧されることでできるボールボンディング部１１１は平面視略円形状に押し潰される。従って、ボールボンディング部１１１がｐ電極５の中心から多少ずれても、ｐ電極５が円形状に形成されているので、ｐ電極５がボールボンディング部１１１からはみ出し難い。   Since the press-bonded ball 211 is formed in a spherical shape, the ball bonding portion 111 that can be pressed is crushed into a substantially circular shape in plan view. Therefore, even if the ball bonding portion 111 is slightly deviated from the center of the p electrode 5, the p electrode 5 is formed in a circular shape, so that the p electrode 5 is difficult to protrude from the ball bonding portion 111.

図８に示すように、ｐ電極５は、円形状に形成され、その直径が圧着ボール２１１の直径としているので、圧着ボール２１１が押し潰されることでできるボールボンディング部１１１は、ｐ電極５より外形が大きくなる。つまり、ワイヤ１５を主発光面Ｆ上のｐ電極５にボンディングしても、発光層３２からの光を、ｐ電極５がボールボンディング部１１１よりはみ出すことで阻害してしまうことがない。従って、主発光面Ｆから出射される光を効率よく取り出すことが可能なので、輝度向上を図ることが可能である。   As shown in FIG. 8, the p-electrode 5 is formed in a circular shape, and the diameter thereof is the diameter of the press-bonded ball 211, so that the ball bonding portion 111 that can be crushed by the press-bonded ball 211 is less than the p-electrode 5. The outline becomes large. That is, even if the wire 15 is bonded to the p-electrode 5 on the main light-emitting surface F, the light from the light-emitting layer 32 is not hindered by the p-electrode 5 protruding from the ball bonding portion 111. Therefore, since the light emitted from the main light emitting surface F can be efficiently extracted, the luminance can be improved.

本実施の形態では、円形状に形成されたｐ電極５の直径を、圧着ボールの直径としているが、圧着ボール２１１の直径以下、ワイヤ１５の直径以上とすることができる。ｐ電極５の直径を圧着ボール２１１の直径以下とすることで、押し潰されて外形が広がるように変形した圧着ボール２１１からｐ電極５がはみ出すことがない。また、圧着ボール２１１は、ワイヤ１５をボンディングする際のワイヤ１５先端に設けられるものであるので、少なくともワイヤ１５の直径より圧着ボール２１１の直径の方が大きい。従って、ｐ電極５の直径を、ワイヤ１５の直径未満としても光の進行には影響しないので、接続強度を確保する点からも、ｐ電極５の直径をワイヤ１５の直径以上とするのが望ましい。   In the present embodiment, the diameter of the p-electrode 5 formed in a circular shape is the diameter of the press-bonded ball, but it can be set to be equal to or smaller than the diameter of the press-bonded ball 211 and the diameter of the wire 15. By setting the diameter of the p-electrode 5 to be equal to or smaller than the diameter of the press-bonded ball 211, the p-electrode 5 does not protrude from the press-bonded ball 211 that is crushed and deformed so as to expand its outer shape. Further, since the press-bonded ball 211 is provided at the tip of the wire 15 when the wire 15 is bonded, the diameter of the press-bonded ball 211 is at least larger than the diameter of the wire 15. Therefore, even if the diameter of the p-electrode 5 is less than the diameter of the wire 15, it does not affect the progress of light. .

また、本実施の形態では、ｐ電極５を圧着ボール２１１と直径が同じ円形状としているが、圧着ボール２１１が押し潰されることでできるボールボンディング部１１１の外形にｐ電極５の外形を合わせるように形成することで等しくしてもよい。ｐ電極５とボールボンディング部１１１との外形とを等しくすることで、ワイヤ１５とｐ電極５との接続強度を保ちながら、取り出し効率の向上を図ることができる。ｐ電極５とボールボンディング部１１１との外形とを等しくした場合には、ワイヤボンディング装置の精度によっては、ボールボンディング部１１１が横方向に少しずれてしまい、ｐ電極５が（数μｍのオーダー）ではみ出してしまうことがある。ｐ電極５にボールボンディング部１１１が完全に重なるようにボールボンディング部１１１が形成されるのが望ましいが、多少のずれ程度では全体に対する影響が少ない。従って、ボールボンディング部１１１の外形にｐ電極５の外形が、ほぼ等しい程度であれば許容される。   In the present embodiment, the p-electrode 5 has a circular shape with the same diameter as that of the press-bonded ball 211, but the external shape of the p-electrode 5 is matched with the external shape of the ball bonding portion 111 that can be crushed. It may be made equal by forming. By making the outer shapes of the p-electrode 5 and the ball bonding portion 111 equal, it is possible to improve the extraction efficiency while maintaining the connection strength between the wire 15 and the p-electrode 5. If the outer shapes of the p-electrode 5 and the ball bonding unit 111 are made equal, the ball bonding unit 111 is slightly displaced in the lateral direction depending on the accuracy of the wire bonding apparatus, and the p-electrode 5 is in the order of several μm. It may stick out. Although it is desirable that the ball bonding portion 111 is formed so that the ball bonding portion 111 completely overlaps the p-electrode 5, the influence on the whole is small with a slight deviation. Therefore, it is acceptable if the outer shape of the p-electrode 5 is approximately equal to the outer shape of the ball bonding portion 111.

図６に示すように、ボールボンディング部１１１を形成すると、キャピラリ２００を上昇させる。このとき、キャピラリ２００を引き上げつつ、アノード電極１４ｂ（図１参照）への方向とは反対となる方向へ戻した後、アノード電極１４ｂ方向へ移動することで、図１に示すような円弧Ｒが大きいワイヤループが配線される。   As shown in FIG. 6, when the ball bonding portion 111 is formed, the capillary 200 is raised. At this time, by pulling up the capillary 200 and returning to the direction opposite to the direction toward the anode electrode 14b (see FIG. 1), the arc R as shown in FIG. Large wire loops are routed.

図７に示すように、キャピラリ２００からワイヤ２１０を引き出しつつ、アノード電極１４ｂへ徐々にキャピラリ２００を下降させる。そしてアノード電極１４ｂにワイヤ２１０が接した状態で水平移動させた後、セカンドボンディングする位置まで到達したらキャピラリ２００の底面２０１をアノード電極１４ｂへ押し付けるようにワイヤ２１０を押圧して切断してウェッジボンド部１１２を形成する。ワイヤ２１０を切断することで、ワイヤ２１０は発光素子１のｐ電極５とアノード電極１４ｂとを導通接続するワイヤ１５となる。   As shown in FIG. 7, while pulling out the wire 210 from the capillary 200, the capillary 200 is gradually lowered to the anode electrode 14b. Then, after moving horizontally with the wire 210 in contact with the anode electrode 14b, when reaching the second bonding position, the wire 210 is pressed and cut so as to press the bottom surface 201 of the capillary 200 against the anode electrode 14b. 112 is formed. By cutting the wire 210, the wire 210 becomes the wire 15 that electrically connects the p-electrode 5 and the anode electrode 14b of the light-emitting element 1.

このようにワイヤ１５として、円弧Ｒが大きいワイヤループを形成すると共に、アノード電極１４ｂにワイヤ２１０が接した状態で水平移動させてウェッジボンド部１１２を形成することで、発光装置１０をリフロー炉で半田する際に発生する急激な熱応力でも、ワイヤ１５の断線を防止することができる。   In this way, a wire loop having a large arc R is formed as the wire 15, and the wedge bond portion 112 is formed by horizontally moving the wire 210 in contact with the anode electrode 14b. The wire 15 can be prevented from being disconnected even by a rapid thermal stress generated during soldering.

以上、本発明の実施の形態について説明してきたが、本発明は前記実施の形態に限定されるものではない。例えば、本実施の形態では、導電性の基板２の下面にｎ電極４が形成された発光装置１０としているが、基板に発光層を形成した後に、ｐ層、発光層およびｎ層の一部をエッチングしてｎ電極を形成する発光素子であっても、ｐ電極をワイヤで接続して電源供給する場合には、ｐ電極の外形をボールボンディング部の外形に、ほぼ等しいか、または小さく形成することで、同様の効果を得られる。   As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment. For example, in the present embodiment, the light emitting device 10 has the n-electrode 4 formed on the lower surface of the conductive substrate 2, but after forming the light emitting layer on the substrate, the p layer, the light emitting layer, and part of the n layer Even when the p-electrode is connected by a wire and power is supplied even if the light-emitting element forms an n-electrode by etching the p-electrode, the outer shape of the p-electrode is formed to be approximately equal to or smaller than the outer shape of the ball bonding portion By doing so, the same effect can be obtained.

本発明は、主発光面から出射される光を、できるだけ効率よく取り出すことが可能なので、基板に発光層を含む半導体層が形成され、この半導体層の主発光面上にワイヤボンディングされるボンディング電極が形成された発光装置および発光素子に好適である。   In the present invention, light emitted from the main light emitting surface can be extracted as efficiently as possible. Therefore, a semiconductor layer including a light emitting layer is formed on a substrate, and a bonding electrode is wire-bonded on the main light emitting surface of the semiconductor layer. It is suitable for a light emitting device and a light emitting element in which is formed.

本発明の実施の形態に係る発光装置の側面図The side view of the light-emitting device which concerns on embodiment of this invention 本発明の実施の形態に係る発光素子の側面図The side view of the light emitting element which concerns on embodiment of this invention 図２に示す発光素子の平面図The top view of the light emitting element shown in FIG. 本発明の実施の形態に係る発光装置のワイヤの配線状態を示す図The figure which shows the wiring state of the wire of the light-emitting device which concerns on embodiment of this invention. 本発明の実施の形態に係る発光装置のワイヤの配線状態を示す図The figure which shows the wiring state of the wire of the light-emitting device which concerns on embodiment of this invention. 本発明の実施の形態に係る発光装置のワイヤの配線状態を示す図The figure which shows the wiring state of the wire of the light-emitting device which concerns on embodiment of this invention. 本発明の実施の形態に係る発光装置のワイヤの配線状態を示す図The figure which shows the wiring state of the wire of the light-emitting device which concerns on embodiment of this invention. 発光装置にワイヤを接続した状態を示す要部拡大図The principal part enlarged view which shows the state which connected the wire to the light-emitting device

符号の説明Explanation of symbols

１ 発光素子
２ 基板
３ 半導体層
３１ ｎ層
３２ 発光層
３３ ｐ層
４ ｎ電極
５ ｐ電極
１０ 発光装置
１１ 配線基板
１２ 封止部
１３ 絶縁基板
１４ 電極
１４ａ カソード電極
１４ｂ アノード電極
１５ ワイヤ
１６ レジスト膜
１１１ ボールボンディング部
１１２ ウェッジボンド部
２００ キャピラリ
２０１ 底面
２１０ ワイヤ
２１１ 圧着ボール DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Substrate 3 Semiconductor layer 31 n layer 32 Light emitting layer 33 p layer 4 n electrode 5 p electrode 10 Light emitting device 11 Wiring board 12 Sealing part 13 Insulating substrate 14 Electrode 14a Cathode electrode 14b Anode electrode 15 Wire 16 Resist film 111 Ball bonding part 112 Wedge bond part 200 Capillary 201 Bottom face 210 Wire 211 Crimp ball

Claims (8)

基板に、発光層を含む半導体層が形成され、前記発光層からの光が主に出射する前記半導体層の主発光面上に、ワイヤボンディング電極が形成された発光素子と、
前記ワイヤボンディング電極にワイヤで接続される電極が形成された配線基板とを備えた発光装置において、
前記ワイヤボンディング電極は、ワイヤボンディングの際に押し潰されたボールボンディング部分より、外形がほぼ等しいか、または小さいことを特徴とする発光装置。 A light emitting device in which a semiconductor layer including a light emitting layer is formed on a substrate, and a wire bonding electrode is formed on a main light emitting surface of the semiconductor layer from which light from the light emitting layer is mainly emitted;
In a light emitting device comprising a wiring board on which an electrode connected to the wire bonding electrode by a wire is formed,
The light emitting device according to claim 1, wherein the wire bonding electrode has an outer shape substantially equal to or smaller than a ball bonding portion crushed during wire bonding. 前記ワイヤボンディング電極は、円形状に形成されていることを特徴とする請求項１記載の発光装置。 The light emitting device according to claim 1, wherein the wire bonding electrode is formed in a circular shape. 前記ワイヤボンディング電極の直径は、ワイヤボンディングの際のワイヤ先端に形成される圧着ボールの直径以下であることを特徴とする請求項２記載の発光装置。 3. The light emitting device according to claim 2, wherein the diameter of the wire bonding electrode is equal to or smaller than the diameter of a press-bonded ball formed at a wire tip during wire bonding. 前記ワイヤボンディング電極の直径は、前記ワイヤの直径以上であることを特徴とする請求項２または３記載の発光装置。 4. The light emitting device according to claim 2, wherein the diameter of the wire bonding electrode is equal to or larger than the diameter of the wire. 基板に、発光層を含む半導体層が形成され、前記発光層からの光が主に出射する前記半導体層の主発光面上に、ワイヤを接続するためのワイヤボンディング電極が形成された発光素子において、
前記ワイヤボンディング電極は、ワイヤボンディングの際に押し潰されたボールボンディング部分より、外形がほぼ等しいか、または小さいことを特徴とする発光素子。 In a light emitting device in which a semiconductor layer including a light emitting layer is formed on a substrate, and a wire bonding electrode for connecting wires is formed on a main light emitting surface of the semiconductor layer from which light from the light emitting layer is mainly emitted. ,
The light emitting device according to claim 1, wherein the wire bonding electrode has an outer shape substantially equal to or smaller than a ball bonding portion crushed during wire bonding. 前記ワイヤボンディング電極は、円形状に形成されていることを特徴とする請求項５記載の発光素子。 The light emitting device according to claim 5, wherein the wire bonding electrode is formed in a circular shape. 前記ワイヤボンディング電極の直径は、ワイヤボンディングの際のワイヤ先端に形成される圧着ボールの直径以下であることを特徴とする請求項６記載の発光素子。 The light emitting device according to claim 6, wherein a diameter of the wire bonding electrode is equal to or smaller than a diameter of a press-bonded ball formed at a wire tip during wire bonding. 前記ワイヤボンディング電極の直径は、前記ワイヤの直径以上であることを特徴とする請求項６または７記載の発光素子。 The light emitting device according to claim 6 or 7, wherein a diameter of the wire bonding electrode is equal to or larger than a diameter of the wire.
JP2006323405A 2006-11-30 2006-11-30 Light emitting device and light emitting element Pending JP2008140840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006323405A JP2008140840A (en) 2006-11-30 2006-11-30 Light emitting device and light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006323405A JP2008140840A (en) 2006-11-30 2006-11-30 Light emitting device and light emitting element

Publications (1)

Publication Number Publication Date
JP2008140840A true JP2008140840A (en) 2008-06-19

Family

ID=39602043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006323405A Pending JP2008140840A (en) 2006-11-30 2006-11-30 Light emitting device and light emitting element

Country Status (1)

Country Link
JP (1) JP2008140840A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015220394A (en) * 2014-05-20 2015-12-07 日亜化学工業株式会社 Light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015220394A (en) * 2014-05-20 2015-12-07 日亜化学工業株式会社 Light emitting device

Similar Documents

Publication Publication Date Title
JP4359195B2 (en) Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting unit
EP2325906B1 (en) Semiconductor light-emitting device and method for manufacturing same
JP4325412B2 (en) LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
EP2325905B1 (en) Semiconductor light-emitting device and method for manufacturing same
TWI400819B (en) Light-emitting diode module for line light source
US8692270B2 (en) Light emitting device
US20090321778A1 (en) Flip-chip light emitting diode and method for fabricating the same
JP5368809B2 (en) LED module manufacturing method and LED module
JP5837456B2 (en) Semiconductor light emitting device and light emitting module
CN107331679A (en) A kind of the high voltage LED chip structure and preparation method of CSP encapsulation
JP2001298216A (en) Surface mount type semiconductor light emitting device
JP2006253288A (en) Light emitting device and manufacturing method thereof
JP2006073618A (en) Optical element and manufacturing method thereof
JP2007073575A (en) Semiconductor light emitting device
KR20090078480A (en) Semiconductor device
JP2009194109A (en) Semiconductor light-emitting element, manufacturing method thereof and illumination apparatus
CN1941439B (en) Light emitting diode and method for manufacturing the same
KR20110035190A (en) Light emitting device
KR101360881B1 (en) Light emitting diode with conductive connect line
JP2004172636A (en) Light emitting diode and manufacturing method
JP4443397B2 (en) Optical semiconductor element, optical semiconductor device, and method of manufacturing optical semiconductor element
CN1722479A (en) Deep ultraviolet used to produce white light
JP2011258856A (en) Light-emitting element and light-emitting device
US10665754B2 (en) Light emitting device
JP2008140840A (en) Light emitting device and light emitting element