JP2008031501A - Film forming apparatus and method for manufacturing vapor-deposited thin film - Google Patents

Abstract

Disclosed is a vapor deposition thin film forming apparatus suitable for forming a liquid crystal alignment film, which is excellent in pretilt angle controllability and can uniformly form an inorganic alignment film on a large-area substrate.
A plurality of substrate carrying means for moving a substrate to be deposited 11 and a plurality of vapor depositions each having a certain angle with respect to a line segment drawn by a locus of movement of the substrate carrying means. Deposition source 12, 13, deposition member 14 having a plurality of slits 15, 16 provided between the substrate carrying means and the deposition source, and operating the plurality of deposition sources simultaneously, and a plurality of depositions A vapor deposition thin film forming apparatus comprising a vapor deposition source control means capable of independently controlling an input power amount of a source.
[Selection] Figure 1

Description

  The present invention relates to a film forming apparatus for forming a vapor deposition thin film on the surface of a vapor deposition substrate and a method for producing a vapor deposition thin film suitable for forming a liquid crystal alignment film.

  A liquid crystal element used for a PC monitor, a thin television, a projector, or the like has a configuration in which a liquid crystal composition is introduced between a pair of substrates on which a pixel electrode and a counter electrode are formed. In order for the liquid crystal element to have an optical switching function, it is necessary that the liquid crystal alignment has a certain regularity during and before and after the application of an electric field to the liquid crystal. A liquid crystal alignment film is formed that regulates in a certain direction.

  As the liquid crystal alignment film, an organic alignment film typified by polyimide is widely used. However, in a liquid crystal element used for a high-luminance projector, there is a problem that the alignment film is light-degraded because the intensity of light applied to the alignment film is high. This problem is solved by adopting an inorganic alignment film instead of the organic alignment film.

The inorganic alignment film is formed by using a vapor deposition method generally called an oblique vapor deposition method. This is a method in which vapor deposition is performed in a state where a line segment connecting the substrate normal line and the substrate center-vapor deposition source is maintained at a certain angle, and this angle is generally called a vapor deposition angle. Generally, silicon oxide (SiO _x : x = 1 to 2) is used as a material, and silicon oxide in a boat or a crucible is evaporated by a resistance heating method or electron beam irradiation. By using such an oblique deposition method, a columnar structure (column structure) made of SiO _x grown obliquely on the substrate is formed. The surface of the thin film having the SiO _x column structure has shape anisotropy corresponding to the vapor deposition angle and vapor deposition direction, and it is said that the liquid crystal is oriented in a specific direction.

  The inorganic alignment film formed by the oblique deposition method is roughly classified into a 60 degree deposition system and an 80 degree deposition system. When a general Np type liquid crystal (nematic liquid crystal with positive dielectric anisotropy) is used, in a 60 degree vapor deposition film, liquid crystal molecules are arranged in a direction perpendicular to the vapor deposition direction, and the pretilt angle shown in FIG. θp (angle formed by the average direction of the liquid crystal director and the substrate normal when no voltage is applied) is 90 degrees. On the other hand, in the 80 degree system vapor deposition, the liquid crystal director is oriented in the same direction as the vapor deposition direction, and the pretilt angle is generated from 55 degrees to 80 degrees. Further, when Nn type liquid crystal (nematic liquid crystal having negative dielectric anisotropy) that is aligned perpendicularly to the surface of the alignment film is used, the pretilt angle is 0 degree in the alignment film of 60 degree vapor deposition system, and 80 In the case of a vapor deposition type alignment film, the pretilt angle is 10 to 35 degrees.

The pretilt angle is a parameter that greatly affects display quality. In particular, the liquid crystal element preferably has a certain pretilt angle in order to suppress the occurrence of disclination lines that may lower the contrast. In order to control the pretilt angle, the vapor deposition angle may be changed in a normal oblique vapor deposition method. However, in order to perform more precise control of the pretilt angle, for example, rotational oblique deposition in which oblique deposition is performed while rotating the substrate (for example, Non-Patent Document 1) or oblique deposition from two different directions 2 It is necessary to use a technique such as a stepwise oblique deposition method (for example, Patent Document 1).
JP 2003-138369 A Japan Journal of Applied Physics, Volume 21, L761-763 (1982)

  However, in the method of performing oblique deposition twice from different directions as shown in Patent Document 1, in order to precisely control the pretilt angle, the thickness of the alignment film formed by the second oblique deposition is several. It is necessary to strictly control at the nm level.

  Further, in the method of performing oblique deposition while rotating the substrate as shown in Non-Patent Document 1, it is possible to perform strict control of the column angle, but to perform it uniformly over the entire surface of the substrate. It is difficult. In order to ensure uniformity, it is necessary to increase the deposition distance (distance between the substrate and the deposition source). However, increasing the deposition distance reduces the deposition rate and increases the size of the vacuum system. There are drawbacks that make it difficult to maintain.

  The present invention has been made in view of the above problems, and provides a method for producing a vapor deposition thin film suitable for forming a liquid crystal alignment film, which has excellent pretilt angle controllability and can form an inorganic alignment film uniformly on a large-area substrate. It is to provide.

  A first aspect of the present invention for solving the above problem is a film forming apparatus, which is a plane drawn by a substrate transport means for moving a deposition target substrate and a trajectory of movement of the substrate transport means. In contrast, a plurality of vapor deposition sources each performing vapor deposition at a certain angle, a deposition member having a plurality of slits provided between the substrate carrying means and the vapor deposition source, and the plurality of vapor depositions Vapor deposition source control means capable of operating the sources simultaneously and independently controlling the input electric energy of the plurality of vapor deposition sources is provided.

It is preferable to have a plurality of shutters provided corresponding to the plurality of vapor deposition sources between the plurality of vapor deposition sources and the slits.
It is preferable that the number of the plurality of vapor deposition sources is two.

The certain angle is 40 degrees or less, preferably 10 degrees or more and 25 degrees or less.
It is preferable that the plurality of vapor deposition sources include a container for holding the vapor deposition raw material and an irradiation unit that irradiates the vapor deposition raw material in the container with an electron beam.

  A method for producing a vapor-deposited thin film according to a second aspect of the present invention is a method for producing a vapor-deposited thin film using the above-described film-forming apparatus, and moves the vapor-deposited substrate placed on the substrate carrying means in one direction. And a step of performing vapor deposition on the deposition target substrate simultaneously using a plurality of vapor deposition sources through a plurality of slits provided in the deposition preventing member.

It is preferable that the film formation speeds of the plurality of vapor deposition sources are different.
It is preferable that the individual film formation speeds of the plurality of vapor deposition sources are controlled by opening and closing shutters provided for the individual vapor deposition sources.

The vapor deposition performed simultaneously using the plurality of vapor deposition sources is preferably electron beam vapor deposition.
The material to be deposited on the deposition substrate is preferably silicon oxide.

  According to the present invention, it is possible to easily form a vapor-deposited thin film serving as an inorganic alignment film that exhibits a desired pretilt angle on a substrate having a relatively large area with a high yield. Moreover, the manufacturing apparatus which can form such a vapor deposition thin film easily can be provided. Furthermore, by using these manufacturing methods and manufacturing apparatuses, it is possible to provide a liquid crystal element that is set to a desired pretilt angle and enables high-quality display.

Hereinafter, the present invention will be described in detail.
First, the film forming apparatus of the present invention will be described with reference to the drawings.
FIG. 1 shows an example of the configuration of a film forming apparatus according to the present invention. In the film forming apparatus of the present invention, a deposition target substrate 11 on which a deposited thin film is formed, a first deposition source 12 and a second deposition source 13 include a first slit 15 formed in an adhesion-preventing member 14 and a first deposition source. Two slits 16 are arranged.

  The deposition target substrate 11 is a substrate on which a deposition thin film serving as a liquid crystal alignment film is formed. For example, a glass substrate on which a transparent conductive film such as ITO is formed, a glass substrate on which a TFT array is formed, and a Si on which a reflective electrode is formed. A substrate such as a MOS transistor substrate is used. The deposition target substrate 11 can be moved to the upper portion of the deposition preventing member 14, the first slit 15, and the second slit 16 by being fixed to the substrate transporting means 17. The moving direction of the substrate carrying means 17 is preferably parallel to the surface of the deposition preventing member 14.

With respect to the line segment 18 drawn by the trajectory of the movement of the substrate transporting means 17, the vapor deposition sources 12 and 13 have inclinations of constant angles θ ₀ and θ ₁ , respectively. A slit 15 for selectively allowing only vapor-deposited particle components having inclinations of angles θ ₀ and θ ₁ from the vapor deposition sources 12 and 13 to a specific portion on the vapor deposition substrate 11 is passed through the deposition preventing member 14. , 16 are formed. By providing such a slit, the deposition angle distribution in the polar angle direction on the deposition target substrate 11, that is, the deposition angle distribution with respect to the substrate normal line, is suppressed, and the deposition angle in the relatively uniform polar angle direction over the entire substrate surface. It is possible to form a vapor-deposited thin film having The number of slits is not limited as long as the uniformity of the vapor deposition angle in the polar angle direction can be ensured. However, as shown in FIG. 1, by providing a slit for each vapor deposition source, it becomes easy to ensure the uniformity of the vapor deposition angle in the polar angle direction from each vapor deposition source. preferable.

  The first vapor deposition source 12 and the second vapor deposition source 13 can independently control the deposition rate of the vapor deposition material. The film forming speed can be controlled by the amount of electric power supplied to the vapor deposition source and the distance between the vapor deposition substrate 11 and each vapor deposition source. However, the present invention is not limited to the above method as long as the deposition rate of the vapor deposition material can be controlled. Further, as shown in FIG. 2, shutters 21 and 22 are provided between the vapor deposition sources 12 and 13 and between the slits 15 and 16, and the amount of vapor deposition particles reaching the vapor deposition substrate 11 is controlled by controlling the opening / closing time thereof. You may control. By such an operation, it is possible to obtain the same effect as the above-described control of the electric energy and the deposition distance.

  The first vapor deposition source 12 and the second vapor deposition source 13 form a film by evaporating the raw material in the vapor deposition source by a method such as a resistance heating method or an electron beam vapor deposition method. The shape of the vapor deposition source is not particularly limited. For example, if the resistance heating method is used, a vapor deposition source having a dot shape, a linear shape, a cylindrical shape, or the like can be used. The number of vapor deposition sources is not particularly limited as long as it is two or more, and a plurality of vapor deposition sources may be used. However, when two vapor deposition sources are used, the size of the apparatus can be simplified, and the necessary effect of controlling the vapor deposition angle in the polar angle direction can be sufficiently obtained.

  FIG. 3 is a schematic view showing an overall image of the configuration of the film forming apparatus in the present invention. The structure of the film forming apparatus is installed in a vacuum chamber 31 connected to a vacuum exhaust means 32 as shown in FIG. The input electric energy of the plurality of vapor deposition sources is independently controlled by the vapor deposition source control means 33. As a result, the film formation speed of each vapor deposition source can be independently controlled. Control of the substrate carrying means 17 and the vacuum exhaust means 32 is controlled by a control means 34 installed outside the vacuum chamber.

Next, the manufacturing method of a vapor deposition thin film is demonstrated using figures.
First, it demonstrates using FIG. The vapor deposition thin film is produced by moving the vapor deposition substrate 11 from the left end to the right end or from the right end to the left end by the substrate transport means 17 while simultaneously operating the vapor deposition sources 12 and 13. At that time, by setting the deposition rates of the vapor deposition sources 12 and 13 to appropriate values in advance, a vapor deposition thin film having a desired column shape can be formed. The film forming speed of the vapor deposition sources 12 and 13 may be controlled by the amount of power input to the vapor deposition source, the vapor deposition distance, and the opening / closing of a shutter as shown in FIG.

Here, the effect produced by performing film formation while simultaneously operating the vapor deposition sources 12 and 13 will be described with reference to FIG.
First, consider a case in which a deposited thin film is produced at a deposition rate A (Å / second) using only the deposition source 12. When the substrate is cut in parallel to the vapor deposition direction, the cross-sectional structure of the vapor deposition thin film becomes a structure as shown in FIG.

Next, a case where film formation is performed while simultaneously operating the vapor deposition sources 12 and 13 will be considered. At this time, the deposition rate when the deposition source 12 is formed alone is A (Å / sec), the deposition rate when the deposition source 13 is deposited alone is B (Å / sec), and A> B Suppose that In this case, the cross-sectional structure of the deposition film becomes a structure as shown in FIG. 4 (b), than the column angle theta _a case of film formation using a vapor deposition source 12 alone, columns in the case of performing simultaneous deposition The angle θ _b is larger.

Further, for comparison, prepared in one deposition source, and shows the column structure of the deposited thin film prepared by vapor deposition angle as the column angle is the same as theta _b in FIG. 4 (b '). In a column having the same column angle as θ _b , the gap between the columns is narrowed. Since the column angle and the gap between the columns are almost uniquely determined, it is difficult to independently control the column angle and the column gap when there is one deposition source.

  Further, when the vapor deposition sources 12 and 13 are operated simultaneously and the film formation speeds A and B are the same when used independently, the column structure is as shown in FIG. The structure grows almost vertically. Such a structure cannot be realized when a single vapor deposition source is used.

  As described above, by forming a film while having a plurality of vapor deposition sources and operating them simultaneously, a column structure that is difficult to produce when only one vapor deposition source is used is formed on a large-area substrate. It can be produced relatively uniformly. Since the liquid crystal alignment is strongly influenced by the shape of the deposited thin film that is the liquid crystal alignment film, the liquid crystal alignment, particularly the pretilt angle, can be precisely controlled by performing more precise column structure control using the present invention. .

The deposition material is not particularly limited as long as a thin film can be formed by a vapor deposition method such as a resistance heating method or an electron beam vapor deposition method, and the formed thin film can orient the liquid crystal. (SiO ₂ ), silicon oxide such as silicon monoxide (SiO) (SiO _x : x = 1 to 2), magnesium oxide (MgO), aluminum oxide (Al ₂ O ₃ ), zinc oxide (ZnO), titanium oxide (TiO ₂ ), zirconium oxide (ZrO ₂ ), cobalt oxide (Co ₃ O ₄ ), iron oxide (Fe ₂ O ₃ , Fe ₃ O ₄ ), and fluorides such as magnesium fluoride (MgF ₂ ) preferable. In particular, silicon oxide (SiO _x ) such as silicon dioxide (SiO ₂ ) and silicon monoxide (SiO) is desirable. This is because these materials can easily form a column structure by vapor deposition.

  The deposited thin film is formed while moving the substrate carrying means 17. The number of movements of the substrate carrying means 17 in one film formation is not particularly limited, but it is preferable to complete the film formation by one movement in order to increase the throughput of the deposited thin film formation. In order to perform film formation once, the substrate transport means 17 may be moved once from the left end to the right end (or vice versa). The moving speed of the substrate carrying means is set to an appropriate value according to the required film thickness of the deposited thin film. For example, if the moving speed is fast, the film thickness becomes small, and if it is slow, the film thickness becomes large. The thickness of the deposited thin film is 200 nm or less, preferably 10 nm or more and 100 nm or less.

Hereinafter, the present embodiment will be described in more detail using examples, but the present invention is not limited to those described in the examples.
Example 1
In this embodiment, a liquid crystal alignment film is manufactured using the film forming apparatus having the configuration shown in FIG. 1, and a liquid crystal element and a projection display apparatus are manufactured using the liquid crystal alignment film.

In this embodiment, deposition is performed by an electron beam deposition method using a film forming apparatus having the configuration shown in FIG. Two vapor deposition sources are arranged as shown in FIG. 1, and silicon dioxide (SiO ₂ ) granules are used as a vapor deposition material. An appropriate amount of silicon dioxide granules is introduced into the hearth installed in both deposition sources.

  Next, a Si substrate (hereinafter referred to as a Si-MOS substrate) on which a large number of reflective liquid crystal element driving panels are formed, on which MOS transistors and Al reflective electrodes are formed, is installed on the substrate transporting means. The size of the Si-MOS substrate is 20 cm (8 inches) in diameter.

Next, the positions of the two vapor deposition sources and the positions of the two slits are determined, and the vapor deposition angle is determined. A specific process for determining the deposition angle will be described with reference to FIG.
(1) The angle θ _A between the center of the substrate surface moved by the substrate carrying means, the line segment C53 drawn when the substrate moves, the center point D56 of the line segment C, and the line segment A51 connecting the first vapor deposition source 57 Is set to 10 degrees.
(2) The angle θ _B formed by the line segment C53 and the line segment B52 connecting the second vapor deposition source 58 and the point D56 was set to 10 degrees.
(3) An adhesion preventing member having a slit formed on line segment A and line segment B is installed. Each slit is rectangular, and both slits have a long side length of 25 cm and a short side length of 3 cm. Moreover, the slit is formed in the deposition preventing member so that the long side of each slit is orthogonal to the substrate moving direction.

After arranging the substrate, the vapor deposition source, and the deposition member as described above, the vacuum chamber is closed, and the vacuum exhaust system composed of the scroll pump and the cryopump is sequentially operated, and the inside of the vacuum chamber is about 1 × 10 ⁻⁵ Pa. Exhaust until the pressure reaches.

  Next, as shown in FIG. 6, the substrate carrying means is moved to the initial position. The initial position is a position as shown in FIG. 6A, and the vapor deposition particles of both vapor deposition sources are positions where they are blocked by the deposition preventing member 62 and do not reach the Si-MOS substrate.

  Next, the two vapor deposition sources are turned on and power is turned on. The amount of electric power of each vapor deposition source is set so that the film formation rate is about 12 Å / s at the vapor deposition angle of 10 degrees with the first vapor deposition source and the film formation rate is about 6 cm / s at the vapor deposition angle of 10 degrees with the second vapor deposition source. adjust. The film formation speed is measured independently for each vapor deposition source by two film thickness meters installed at a position below the deposition preventing member so as not to interfere with the film formation. Then, the deposition rate of each deposition source is determined with reference to a graph showing the relationship between the deposition angle, the deposition rate, and the input power amount when each deposition source is independently used.

  Next, the substrate carrying means is operated to start film formation on the Si-MOS substrate. The substrate carrying means forms a film on the substrate from the initial position of FIG. 6A through the position of FIG. 6B, and reaches the end position of FIG. 6C. Exit. The position of FIG. 6C is a position where the vapor deposition particles of both vapor deposition sources are blocked by the deposition preventing member 62 and do not reach the Si-MOS substrate, similarly to the position of FIG.

  A liquid crystal alignment film is formed on the Si-MOS substrate by the above procedure. Further, in the same procedure, a liquid crystal alignment film is also formed on a glass substrate with an ITO counter electrode having a diameter of 200 mm (8 inches) (hereinafter referred to as an ITO glass substrate).

  When a cross-sectional SEM observation of a sample obtained by cutting the liquid crystal alignment film along the substrate traveling direction is performed, a structure as shown in FIG. 4B is observed. The column angle is about 55 degrees. Moreover, when the same cross-sectional SEM observation was performed about each place of the Si-MOS board | substrate and the ITO glass substrate, the structure as shown in FIG.4 (b) is observed similarly. In addition, unevenness or the like is not particularly confirmed by observation with an optical microscope. From this result, it can be confirmed that the liquid crystal alignment film is uniformly formed on the substrate.

  Next, both the Si-MOS substrate and the glass substrate are cut into a size of about 20 mm × 16 mm with a scriber. Thereafter, a silica spacer-containing sealing agent having a particle size of 3 μm is applied onto the Si-MOS substrate, and the liquid crystal alignment film is superposed so as to have an antiparallel configuration shown in FIG. The sealing agent is heat-cured at 120 ° C. to produce an empty cell (a cell in which liquid crystal is not injected). When the visible light reflection intensity spectrum of this empty cell was measured and the cell gap was calculated, it was confirmed that the cell thickness was about 3 μm at each point in the empty cell.

  Next, MLC-6608 (manufactured by Merck), which is a liquid crystal mixture for VA (Vertical Alignment) mode, is injected into the empty cell, and then sealed, and the nematic-isotropic phase transition temperature (91 ° C.) or higher. Then, the film is cooled and then subjected to an alignment treatment. A liquid crystal cell is manufactured by performing the above steps.

  Here, in order to measure the pretilt angle, a transmissive liquid crystal cell is manufactured by using both of the two substrates with alignment films to be bonded together as glass substrates. As a result of measuring the pretilt angle by the crystal rotation method, a pretilt angle of about 15 degrees is obtained. The definition of the pretilt angle at this time is an angle formed by the normal line of the substrate and the director of the liquid crystal as shown in FIG.

  In order to confirm the uniformity of the pretilt angle on the substrate, a deposited thin film is formed on two glass substrates having a diameter of 200 mm (8 inches) by the same method, and then cut into a size of about 20 × 16 mm. A liquid crystal cell for pretilt measurement is manufactured. At the time of manufacture, the substrates cut out from the same position of the two substrates are bonded so as to be antiparallel. When the pretilt angle of the liquid crystal cell produced in this way is measured, it is about 15 degrees in any cell, and the uniformity of the pretilt angle when the vapor deposited thin film produced by this production method is used as the liquid crystal alignment film can be confirmed.

  A liquid crystal element is manufactured using a liquid crystal cell having such a pretilt angle, and a three-plate reflective projector is manufactured using three of these. When an image generated using this apparatus is projected on a screen, a good display without display unevenness can be obtained.

Example 2
In this example, a liquid crystal alignment film is manufactured using the film forming apparatus having the configuration shown in FIG. 2, and a liquid crystal element and a projection display apparatus are manufactured using the liquid crystal alignment film.

In this embodiment, as shown in FIG. 2, deposition is performed by an electron beam deposition method using a film forming apparatus having the same configuration as in Embodiment 1 except that a shutter is provided between the deposition source and the substrate. As in the case of Example 1, granules of silicon dioxide (SiO ₂ ) are used as the vapor deposition material.

Next, a Si substrate (hereinafter referred to as Si-MOS substrate) is installed in the same procedure as in Example 1, the positions of the two vapor deposition sources and the positions of the two slits are determined, the vapor deposition angle is determined, and 1 × 10 ^{− The} inside of the vacuum chamber is evacuated to about ⁵ Pa.

  Next, the substrate portable device is moved to the initial position. The initial position is a position as shown in FIG. 6A, and the vapor deposition particles of both vapor deposition sources are positions where they are blocked by the deposition preventing member 62 and do not reach the Si-MOS substrate.

  Next, with the shutters installed at the respective vapor deposition sources closed, the vapor deposition sources are turned on and power is turned on. The amount of electric power supplied to the vapor deposition source is adjusted so that each film formation rate is 20 Å / s at a vapor deposition angle of 10 degrees.

  Next, the shutter installed on the vapor deposition source 1 is set to repeat opening and closing every 0.5 seconds, and the opening and closing operation is started. The shutter installed on the vapor deposition source 2 is set to repeat the operation of closing for 0.7 seconds and then opening for 0.3 seconds, and the opening and closing operation is started. After setting in this way, the film formation rate of each vapor deposition source was measured with two film thickness meters similar to those of Example 1. As a result, the vapor deposition source 1 was about 10 mm / s and the vapor deposition source 2 was about 6 mm / s. It becomes.

Under the above conditions, as in the case of Example 1, vapor deposition is performed on the Si-MOS substrate and the ITO glass substrate to form a liquid crystal alignment film.
When the cross-sectional SEM observation of the liquid crystal alignment film is performed in the same manner as in the case of Example 1, a structure substantially the same as the structure shown in FIG. 4B observed in Example 1 is observed. Further, when the same cross-sectional SEM observation is performed on each of the Si-MOS substrate and the ITO glass substrate, a structure as shown in FIG. 4B is also observed. In addition, unevenness or the like is not particularly confirmed by observation with an optical microscope. That is, it can be confirmed that the liquid crystal alignment film is uniformly formed on the substrate even when the formation method used in this example is used.

Thereafter, when pretilt measurement is performed in the same manner as in Example 1, the pretilt angle is about 15 degrees at each location on the substrate, and the uniformity of the pretilt angle can also be confirmed.
Further, when a liquid crystal cell and a projection display device are manufactured in the same manner as in the first embodiment, and an image generated using this device is projected onto a screen, a good display with almost no unevenness similar to that in the first embodiment can be obtained. .

  INDUSTRIAL APPLICABILITY The present invention can be used for a liquid crystal element using a liquid crystal alignment film formed by a film formation method such as a vapor deposition method, and a display device using the liquid crystal element, for example, a projection display device such as a projector, a liquid crystal monitor. It can be used for LCD TVs.

It is the schematic which shows an example of a structure of the film-forming apparatus in this invention. It is the schematic which shows the other example of a structure of the film-forming apparatus in this invention. It is the schematic which shows the whole image of the structure of the film-forming apparatus in this invention. It is the schematic which shows the shape of the liquid crystal aligning film produced with the manufacturing method of the liquid crystal aligning film of this invention. It is a schematic diagram showing an example of composition of a film deposition system in the present invention. It is the schematic which shows 1 process of the manufacturing method of the liquid crystal aligning film in this invention. It is explanatory drawing explaining the bonding direction of the board | substrate with a liquid crystal aligning film. It is explanatory drawing explaining the pretilt angle (theta) p.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Substrate to be deposited 12, 57, 63 1st vapor deposition source 13, 58, 64 2nd vapor deposition source 14, 62 Adhering member 15 1st slit 16 2nd slit 17, 61 Substrate carrying means 18 Line segment DESCRIPTION OF SYMBOLS 21 1st shutter 22 2nd shutter 31 Vacuum chamber 32 Vacuum exhaust means 33 Deposition source control means 34 Control means 35 Film-forming apparatus 41 Column structure 51 Line segment A
52 Line B
53 Line C
54 θA
55 θB
56 points D
71 Upper substrate 72 Upper liquid crystal alignment film 73 Lower substrate 74 Lower liquid crystal alignment film 81 Pretilt angle θp
82 Liquid crystal molecules 83 Liquid crystal alignment film 84 Glass substrate

Claims (10)

  A substrate transporting means for moving the substrate to be deposited, a plurality of deposition sources each performing deposition with a certain angle with respect to a plane drawn by a trajectory of movement of the substrate transporting means, and the substrate transportable It is possible to operate the plurality of deposition sources at the same time and to control the input power amount of the plurality of deposition sources independently, provided between the carrying means and the deposition source and having the plurality of slits. A film deposition apparatus comprising an evaporation source control means.   The film forming apparatus according to claim 1, further comprising: a plurality of shutters provided corresponding to the plurality of vapor deposition sources between the plurality of vapor deposition sources and the slits.   The film forming apparatus according to claim 1, wherein the number of the plurality of vapor deposition sources is two.   The film forming apparatus according to claim 1, wherein the certain angle is 40 degrees or less.   5. The plurality of vapor deposition sources, each comprising a container for holding a vapor deposition raw material, and an irradiation means for irradiating the vapor deposition raw material in the container with an electron beam. The film forming apparatus according to item.   A method for producing a vapor deposition thin film using the film forming apparatus according to any one of claims 1 to 5, wherein the vapor deposition substrate placed on a substrate carrying means is moved in one direction, the vapor deposition And a step of performing vapor deposition simultaneously using a plurality of vapor deposition sources through a plurality of slits provided in an adhesion-preventing member on the substrate.   The method for producing a vapor-deposited thin film according to claim 6, wherein the deposition rates of the plurality of vapor deposition sources are different.   8. The method for producing a vapor-deposited thin film according to claim 6 or 7, wherein the individual film formation speeds of the plurality of vapor deposition sources are controlled by opening and closing a shutter provided for each vapor deposition source.   The method for producing a vapor-deposited thin film according to any one of claims 6 to 8, wherein the vapor deposition simultaneously performed using the plurality of vapor deposition sources is electron beam vapor deposition.   The method for producing a vapor-deposited thin film according to any one of claims 6 to 9, wherein a substance to be vapor-deposited on the vapor-deposited substrate is silicon oxide.

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