JP2008004865A - Organic electroluminescence display, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To divide a second electrode without using a barrier by the length narrower than a conventional one, even if one with the same pattern accuracy is used as a photoresist. <P>SOLUTION: An organic EL display 11 is provided with a substrate 12, a plurality of first electrodes 13 formed in stripe on the substrate 12, an organic EL layer 14 formed to cover the first electrodes 13, and a plurality of second electrodes 15 formed in stripe that intersect with the first electrodes 13 on the organic EL layer 14. A plurality of second electrode covering layers 16 formed in parallel with the second electrodes 15 are provided on the second electrodes 15. The second electrode covering layers 16 are formed of a material with faster etching rate of a second electrode etching agent than that of the second electrodes 15, and a distance between the adjacent second electrode covering layers 16 is set wider than that of the adjacent second electrodes 15. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an organic electroluminescence display and a method for producing the same, and more particularly, a light emitting layer made of a thin film of an organic EL material using electroluminescence of an organic compound (hereinafter, electroluminescence may be referred to as EL). The present invention relates to an organic EL display in which organic EL elements each having a shape are arranged in a matrix and a method for manufacturing the same.

  Conventionally, this type of organic EL display includes a stripe-shaped first electrode (anode) and a stripe-shaped second electrode (cathode) orthogonal to the first electrode, and the first electrode and the second electrode. There is a so-called passive matrix type in which an organic EL layer is formed therebetween. When manufacturing this organic EL display, after forming an organic EL layer, it is necessary to form a 2nd electrode in the parallel stripe form orthogonal to a 1st electrode. However, since the organic EL material is vulnerable to moisture, it is difficult to form the second electrode by a photolithographic method that is a wet process. Accordingly, in order to ensure the insulation between the second electrode and the first electrode and the insulation between the adjacent second electrodes, it has been proposed to provide a plurality of partition walls extending in parallel with the second electrode (for example, patents). Reference 1).

Further, it has been proposed to form a cathode by performing dry etching on a cathode layer formed on an organic EL layer (see, for example, Patent Document 2). In the method of Patent Document 2, a striped anode 52 is formed on a transparent substrate 51 and an organic EL layer 53 is formed on the anode 52 and the transparent substrate 51 as shown in FIG. Then, the first metal layer 54, the second metal layer 55, and the blocking layer 56 are laminated on the organic EL layer 53, and a photoresist 57 is formed on the blocking layer 56 according to the electrode pattern. The blocking layer 56 has a crystal structure different from the crystal structure of the second metal layer 55, and when a photoresist 57 having a predetermined pattern is formed in the photolithography process, a developer, moisture, or the like is applied to the first metal layer 54 or the organic EL. It plays the role of preventing entry into the layer 53. From the state of FIG. 6A, dry etching is performed using the photoresist 57 as an etching mask, and the blocking layer 56 and the second metal layer 55 are continuously dry-etched as shown in FIG. 6B. Next, a stripping process of the photoresist 57 is performed, and the photoresist 57 is removed, and the exposed first metal layer 54 is oxidized to become an insulating portion, and the first metal layer 54, the second metal layer 55, A striped cathode composed of three layers of the blocking layer 56 is formed.
JP-A-8-315981 JP-A-11-67461

  One advantage of the organic EL display is that it can be thinned. However, in the configuration in which the second electrode is divided using the partition as in Patent Document 1, it is necessary to increase the partition in order to reliably divide the second electrode. In Patent Document 1, the height (thickness of the partition) is required. 1) is preferably 1 to 10 μm. This value is several times to 10 times or more the thickness of the first electrode, the second electrode, or the organic EL layer. Therefore, it becomes a minus for the thinning of the organic EL display. Further, the line width of the partition wall where the second electrode can be divided depends on the performance of the photolithography equipment, and is currently about 15 μm.

  Further, since the organic EL material is vulnerable to moisture and oxygen, it is necessary to seal the organic EL element. Conventionally, glass or stainless steel sealing cans (cover cases) have been used as sealing means, but the configuration using the sealing cans greatly increases the thickness of the organic EL display, which hinders thinning. Come. Therefore, when pursuing thinning, sealing with an inorganic film is performed. However, when the height of the partition wall is increased, it is difficult to deposit a sealing film on a portion behind the partition wall, and there is a problem in that the sealing performance is deteriorated.

  On the other hand, in the method of forming the cathode by dry etching as in Patent Document 2, it is possible to reduce the thickness as compared with the method using the partition wall, and it is advantageous in terms of sealing performance when film sealing is performed. However, in Patent Document 2, since the cathode is divided into predetermined intervals by one dry etching, the accuracy of the pattern of the photoresist 57 is directly reflected in the division interval.

  The present invention has been made in view of the above-described conventional problems. The object of the present invention is to divide the second electrode without using a partition wall, and to use the second electrode even if a photoresist having the same pattern accuracy is used. It is an object to provide an organic EL display and a method for manufacturing the organic EL display that can reduce the division interval of the display.

  In order to achieve the above object, an invention according to claim 1 is an organic electroluminescence display in which organic electroluminescence elements are arranged in a matrix. And on the substrate, a plurality of first electrodes formed in a stripe shape on the substrate, an organic electroluminescence layer formed so as to cover the first electrode, and the first layer on the organic electroluminescence layer A plurality of second electrodes formed in stripes intersecting with the electrodes, and a plurality of second electrode coating layers formed in parallel with the plurality of second electrodes on the second electrodes. The second electrode coating layer is formed of a material having a higher etching rate with respect to the etching agent for the second electrode than the material of the second electrode, and the interval between the adjacent second electrode coating layers is adjacent. It is set wider than the interval between the second electrodes.

  In this invention, since the 2nd electrode is divided | segmented without using a partition, thickness reduction can be achieved compared with the case where a partition is used. In addition, when the organic EL display is manufactured, even when a photoresist having the same pattern accuracy is used, the division interval of the second electrode can be made narrower than in the past.

  According to a second aspect of the present invention, in the first aspect of the present invention, the second electrode coating layer is formed of an inorganic nonmetal. In the present invention, it is easy to obtain a material having a higher etching rate for the etching agent for the second electrode than the material for the second electrode.

  According to a third aspect of the invention, in the first or second aspect of the invention, the second electrode covering layer and a part of the second electrode are covered and formed along the second electrode. The resist layer is formed, and one end in the width direction of the resist layer is formed to coincide with one end in the width direction of each second electrode. In the present invention, since the distance between the second electrodes is set depending on where the position of one end in the width direction of the resist layer is, the distance between the second electrodes can be set narrow even if the distance between adjacent resist layers is wide. it can.

  The invention according to claim 4 is the invention according to any one of claims 1 to 3, wherein the first electrode formed on the substrate, the organic electroluminescence layer, the second electrode, A sealing film for covering the exposed portion of the second electrode covering layer is provided. According to the present invention, the partition wall is not used for dividing the second electrode, and in combination, the organic EL display can be made thinner.

  The invention according to claim 5 is a method of manufacturing an organic electroluminescence display in which organic electroluminescence elements are arranged in a matrix. Then, a first electrode forming step of forming a plurality of first electrodes on the substrate in a stripe shape, and an organic electroluminescence layer formed after the first electrode forming step and forming an organic electroluminescence layer so as to cover the first electrode A luminescence layer forming step and a second electrode forming layer forming step which is performed after the organic electroluminescence layer forming step and forms a second electrode forming layer on the organic electroluminescence layer. A second electrode covering layer forming layer forming step of forming a second electrode covering layer forming layer on the second electrode forming layer; and a first resist layer being formed on the second electrode covering layer forming layer. 1 resist layer formation process, and the 2nd electrode coating layer formation process which etches the said 2nd electrode coating layer formation layer and forms the striped 2nd electrode coating layer. Further, a second resist layer forming step of forming a second resist layer so as to cover a part of the second electrode forming layer exposed from the second electrode covering layer; and stripe etching by dry etching the second electrode forming layer A second electrode forming step of forming a second electrode having a shape.

  In the present invention, the second electrode is divided and formed by etching the second electrode forming layer formed on the organic EL layer covering the first electrode by dry etching. Therefore, the thickness can be reduced as compared with the method of dividing the second electrode using the partition wall. In addition, a resist layer serving as a mask for dry etching the second electrode formation layer is formed in two stages, not in one stage. In the first stage, the second electrode coating layer is etched with a predetermined width by etching using the first resist layer formed as a mask at a distance wider than the distance between the divided second electrodes. In the second stage, the second electrode is etched. The second electrode forming layer is etched using the second resist layer covering a part of the etched portion of the coating layer and the second electrode coating layer as a mask. Therefore, even if a photoresist having the same pattern accuracy is used, the division interval of the second electrode can be made narrower than in the past.

  According to a sixth aspect of the invention, in the fifth aspect of the invention, the second resist layer is formed after removing the first resist layer. According to the present invention, the second resist layer can be formed with higher accuracy than when the second resist layer is formed without removing the first resist layer.

  The invention according to claim 7 is the invention according to claim 5 or claim 6, wherein after the second electrode forming step, the first electrode formed on the substrate, the organic electroluminescence layer, A sealing film forming step of forming a sealing film covering the exposed portion of the second electrode, the second electrode covering layer, and the second resist layer; In this invention, compared with the case where sealing of an organic EL element is performed by can sealing, a thinned organic EL display can be manufactured.

  The invention according to claim 8 is the invention according to claim 7, wherein the second electrode covering layer and the sealing film are formed of the same material. In this invention, compared with the case where a 2nd electrode coating layer and a sealing film are formed with another material, the kind of material used for manufacture of an organic electroluminescent display can be decreased.

  According to the present invention, it is possible to divide the second electrode without using a partition wall, and it is possible to divide the division interval of the second electrode as compared with the conventional one even if a photoresist having the same pattern accuracy is used. A display and a manufacturing method thereof can be provided.

  Hereinafter, an embodiment embodying the present invention will be described with reference to FIGS. 1 to 3 schematically show the configuration of the organic EL display. For the sake of illustration, in order to exaggerate some dimensions and make them easy to understand, the width and length of each part are shown. The ratio of dimensions such as thickness and thickness is different from the actual ratio.

  FIG. 1B is a schematic perspective view of an organic EL display in which a sealing film is omitted. As shown in FIGS. 1A and 1B, the organic EL display 11 covers a substrate 12, a plurality of first electrodes 13 formed in a stripe shape on the substrate 12, and the first electrode 13. The formed organic EL layer 14 (organic electroluminescence layer) and a plurality of second electrodes 15 formed in a stripe shape intersecting the first electrode 13 on the organic EL layer 14 are provided. On the second electrode 15, a plurality of second electrode coating layers 16 formed in parallel with the second electrode 15 are provided, and an interval S <b> 1 between the adjacent second electrode coating layers 16 is defined between the adjacent second electrodes 15. It is set wider than the interval S2. Further, a resist layer 17 that covers a part of each second electrode covering layer 16 and each second electrode 15 and is formed along each second electrode 15 is provided, and one end of the resist layer 17 in the width direction (FIG. 1). The right end in (a) is formed so as to coincide with one end in the width direction of each second electrode 15.

  As shown in FIG. 1A, the organic EL display 11 has an exposed first electrode 13, organic EL layer 14, second electrode 15, second electrode coating layer 16 and resist layer 17 formed on the substrate 12. A sealing film 18 covering the portion is provided. The organic EL display 11 includes an organic EL element (organic electroluminescence element) in a state in which an organic EL layer 14 is provided between the electrodes 13 and 15 at each intersection of the first electrode 13 and the second electrode 15. ) And the organic EL elements are arranged on the substrate 12 in a matrix.

A transparent glass substrate is used as the substrate 12.
The first electrode 13 constitutes an anode and is made of ITO (indium tin oxide) used as a transparent electrode in a known organic EL element.

The organic EL layer 14 is formed by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the first electrode 13 side.
The second electrode 15 constitutes a cathode and is formed of a metal suitable for the cathode of the organic EL element, for example, silver (Ag) or aluminum (Al), and has light reflectivity. The organic EL element is configured as a so-called bottom emission type in which light emitted from the organic EL layer 14 is extracted (emitted) from the substrate 12 side.

  The second electrode coating layer 16 is formed of a material that has a higher etching rate with respect to the etching agent for the second electrode 15 than the material of the second electrode 15. In this embodiment, an inorganic nonmetal is used as the material of the second electrode coating layer 16. Specifically, the second electrode coating layer 16 is made of silicon nitride.

The resist layer 17 is made of a photo-curing type resin. An interval S3 between adjacent resist layers 17 is formed to be the same as an interval S1 between adjacent second electrode coating layers 16.
The sealing film 18 is exposed in the exposed portions of the first electrode 13, the organic EL layer 14, the second electrode 15, the second electrode coating layer 16 and the resist layer 17, that is, in a state before the sealing film 18 is formed. It is formed so as to cover the part. However, the sealing film 18 is not formed on the extraction portion of the first electrode 13 and the extraction portion of the second electrode 15, that is, the terminal portion. The sealing film 18 is made of silicon nitride, which is the same material as the second electrode coating layer 16.

Next, a method for manufacturing the organic EL display 11 will be described.
First, in the first electrode forming step, a plurality of first electrodes 13 are formed on the substrate 12 in a stripe shape. Specifically, an ITO film constituting a transparent electrode is formed on the substrate 12. The ITO film is formed by a known thin film forming method such as a sputtering method, a vacuum evaporation method, or an ionization evaporation method. Next, the ITO film is etched to form the first electrode 13 in a stripe shape.

Next, as shown in FIG. 2A, an insulating film 19 is formed so as to fill the space between the first electrodes 13. The insulating film 19 is formed by a photolithography method using a positive resist.
Next, in the organic electroluminescence layer forming step, the organic EL layer 14 is formed so as to cover the first electrode 13 and the insulating film 19. The organic EL layer 14 is formed by sequentially forming each layer constituting the organic EL layer 14 by a known vacuum deposition method. The thickness of each layer is, for example, in the range of 1 to 100 nm.

  Next, in the second electrode formation layer formation step, the second electrode formation layer 20 is formed on the organic EL layer. The second electrode formation layer 20 is formed by evaporating Ag or Al. As a result, the state shown in FIG.

  Next, in the second electrode covering layer forming layer forming step, the second electrode covering layer forming layer 21 is formed on the second electrode forming layer 20. The second electrode covering layer forming layer 21 is formed by depositing silicon nitride by a known plasma CVD method in a vacuum after the second electrode forming layer 20 is formed. As shown in FIG. 2C, the second electrode coating layer forming layer 21 is formed so as to cover the end surfaces of the organic EL layer 14 and the second electrode forming layer 20.

  Next, the first resist layer 22 is formed on the second electrode coating layer forming layer 21 in the first resist layer forming step. Then, as shown in FIG. 2C, the first resist layer 22 is formed at a location excluding the portion to be etched of the second electrode coating layer forming layer 21. Even if the first resist layer 22 is formed by photolithography using a photoresist, photo-curing type resin is applied to a portion where the first resist layer 22 is to be formed by inkjet or printing, and then light irradiation is performed. It may be formed by curing. Since the second electrode covering layer forming layer 21 is formed so as to cover the end portions of the second electrode forming layer 20 and the organic EL layer 14, even if formed by photolithography, the organic EL layer 14 is not adversely affected. .

Next, in the second electrode coating layer forming step, the second electrode coating layer forming layer 21 is dry-etched to form the striped second electrode coating layer 16. Dry etching is performed using nitrogen trifluoride (NF ₃ ) or sulfur hexafluoride (SF ₆ ) as an etching gas. As a result, as shown in FIG. 3A, the second electrode coating layer 16 is formed with an interval S1.

Next, the first resist layer 22 is removed in a first resist layer removing step. The first resist layer 22 is removed by etching with an inert gas such as Ar, N ₂ or a combination thereof.

  Next, in the second resist layer forming step, the second resist layer 23 is formed so as to cover a part of the second electrode forming layer 20 exposed from the second electrode covering layer 16. The second resist layer 23 is formed by applying a photo-curing type resin to a portion where the second resist layer 23 is to be formed by inkjet or printing, and then curing by applying light irradiation. When the second resist layer 23 is formed by a photolithography method using a photoresist, unlike when the first resist layer 22 is formed, moisture adheres to the second electrode forming layer 20 when the photoresist layer is developed. It is not preferable. The second resist layer 23 remains as the resist layer 17 on the organic EL display 11 which is the final product. The interval S3 between the second resist layers 23 is formed to be the same as the interval S1 between the adjacent second electrode coating layers 16. As a result, the state shown in FIG.

Next, in the second electrode forming step, the second electrode forming layer 20 is dry-etched to form the striped second electrode 15. Dry etching is performed using argon gas as an etching gas. Note that when the second electrode formation layer 20 is formed of Al, a chlorine-based gas (CCl ₄ —O ₂ ) or the like may be used as an etching gas. As a result, as shown in FIG. 3C, the second electrode 15 is formed with an interval S2. If the second resist layer 23 is formed in a state shifted from the first resist layer 22 by ½ pitch, the interval S2 between the second electrodes 15 is ½ the interval S3 between the second resist layers 23. It will be.

  Next, the sealing film 18 is formed in the sealing film forming step. The sealing film 18 is formed by depositing silicon nitride by a known plasma CVD method after the second electrode 15 is formed. Then, as shown in FIG. 1A, the organic EL display 11 is completed.

According to this embodiment, the following effects can be obtained.
(1) In the organic EL display 11, when the second electrode 15 is formed in a stripe shape on the organic EL layer 14, the second electrode 15 is dry-etched instead of dividing the second electrode 15 with a partition wall. Thus, the second electrode 15 is formed. Accordingly, it is possible to reduce the thickness as compared with the configuration in which the second electrode is divided using the partition walls.

  (2) The resist layer 17 serving as a mask when the second electrode forming layer 20 is dry-etched is formed not in one step but in two steps. In the first stage, etching using the first resist layer 22 formed at a wider interval than the interval between the divided second electrodes 15 as a mask, and an etching agent for the second electrode as compared with the material of the second electrode 15 The second electrode coating layer 16 formed of a material having a high etching rate with respect to is etched with a predetermined width. In the second stage, etching of the second electrode forming layer 20 is performed using the second resist layer 23 covering a part of the etched portion of the second electrode coating layer 16 and the second electrode coating layer 16 as a mask. Is called. The interval S2 between the adjacent second electrodes 15 is not formed to be the same as the interval between the first resist layer 22 or the second resist layer 23, but is set according to the position of one end of the second resist layer 23. Even if the distance S3 between the layers 23 is large, the distance S2 between the second electrodes 15 can be set narrow. Therefore, even when a resist having the same pattern accuracy is used, the division interval of the second electrode 15 can be made narrower than in the past. As a result, the aperture ratio of the organic EL display 11 can be increased, and power consumption can be reduced with the same luminance.

  (3) By changing the position of one end in the width direction of the second resist layer 23 formed on the second electrode covering layer 16 and the second electrode forming layer 20, the distance S2 between the second electrodes 15 is changed to the second resist. It can be freely set within the range of the positional accuracy when forming the layer 23. The distance S2 between the second electrodes 15 can be easily reduced to ½ of the distance S3 between the second resist layers 23 that can be formed using current photolithography.

  (4) The second electrode coating layer 16 is formed of an inorganic nonmetal. Therefore, it becomes easier to obtain a material having a higher etching rate with respect to the etching agent for the second electrode than the material of the second electrode 15. For example, by using a metal oxide or nitride, it becomes easy to obtain a material having a high etching rate with respect to the etching agent for the second electrode.

  (5) Since the second resist layer 23 is formed after the first resist layer 22 is removed, the second resist layer is formed as compared with the case where the second resist layer 23 is formed without removing the first resist layer 22. 23 can be formed with high accuracy.

  (6) The sealing film 18 which covers the exposed part of the 1st electrode 13, the organic EL layer 14, the 2nd electrode 15, the 2nd electrode coating layer 16, and the resist layer 17 which were formed on the board | substrate 12 is provided. Therefore, compared with the case where the organic EL element is sealed by can sealing, the thinned organic EL display 11 can be manufactured.

  (7) The second electrode coating layer 16 and the sealing film 18 are formed of the same material. Therefore, compared to the case where the second electrode coating layer 16 and the sealing film 18 are formed of different materials, the types of materials used for manufacturing the organic EL display 11 can be reduced, and the manufacturing becomes easy.

The embodiment is not limited to the above, and may be embodied as follows, for example.
The inorganic non-metallic material forming the second electrode coating layer 16 is not limited to silicon nitride, and may be a metal oxide such as silicon oxide, for example.

  The second electrode coating layer 16 only needs to be formed of a material that has a higher etching rate with respect to the etchant for the second electrode than the material of the second electrode 15, and is not limited to inorganic nonmetals, Resin may be used. When a metal is used for the material of the second electrode coating layer 16, the second electrode coating layer 16 constitutes a part of the second electrode 15, and therefore, as shown in FIG. The electrode covering layer 16 is laminated on the second electrode 15 without covering the organic EL layer 14 and the end of the second electrode 15. The formation of the first resist layer 22 cannot be performed by photolithography, and a photo-curing type resin is applied to a portion where the first resist layer 22 is to be formed by inkjet or printing, and then cured by light irradiation. Is done. In this case, the second electrode coating layer 16 made of metal is laminated on the second electrode 15, so that the thickness of the second electrode 15 necessary for flowing the same current can be reduced.

○ When the second electrode coating layer 16 is formed of silicon nitride, the etching agent is not limited to nitrogen trifluoride or sulfur hexafluoride, and for example, a fluorine compound such as CF ₄ , C ₂ F ₆ , C ₅ F _8, etc. It may be used, a mixture of fluorine compounds may be used, or a fluorine compound may be mixed with O ₂ , H ₂ or an inert gas.

  The material of the second electrode coating layer 16 may be any material that has a higher etching rate with respect to the etching agent for the second electrode than the material of the second electrode 15, and when the second electrode forming layer 20 is etched. The second electrode coating layer 16 may be slightly etched. That is, the thickness of the second electrode coating layer 16 may be reduced as long as the function of the etching mask can be maintained until the etching of the second electrode formation layer 20 is completed.

  In the case where the sealing film 18 is formed after the second electrode 15 is formed, the sealing film forming step may be performed after the second resist layer 23 is removed. In this case, since the sealing film 18 is formed on the second electrode coating layer 16 in the organic EL display 11 as shown in FIG. 4B, the resist layer 17 does not exist in the organic EL display 11, Thinning becomes possible.

  ○ When forming the second resist layer 23, the second resist layer 23 may be formed on the first resist layer 22 as shown in FIG. 5 without removing the first resist layer 22. . In this case, it is not necessary to remove the first resist layer 22.

The material of the sealing film 18 does not have to be the same material as the second electrode coating layer 16.
The insulating film 19 formed between the first electrodes 13 may be omitted. However, the provision of the insulating film 19 not only ensures the insulation between the adjacent first electrodes 13 but also the organic EL layer 14 and the second electrode forming layer 20 that are sequentially stacked on the first electrode 13. Compared to the case where the layers are stacked in a flat state and the insulating film 19 is not formed, processing such as etching is performed smoothly.

O Can sealing may be performed instead of providing a sealing film as a sealing means for protecting the organic EL layer 14 from oxygen and moisture.
The 1st electrode 13 and the 2nd electrode 15 should just cross | intersect, and do not necessarily need to be orthogonal.

  The structure of the organic EL layer 14 is not limited to the structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer, and may be a structure including at least the light emitting layer. For example, a three-layer structure including a hole transport layer, a light-emitting layer, and an electron transport layer, or a three-layer structure in which a hole-injection transport layer and an electron-injection-transport layer are provided with the light-emitting layer interposed therebetween may be employed. Further, depending on the material of the light emitting layer, the organic EL layer 14 may be composed only of the light emitting layer.

The substrate 12 is not limited to glass but may be a transparent resin substrate or film.
The first electrode 13 is an anode and the second electrode 15 is not limited to a cathode, but the first electrode 13 may be a cathode and the second electrode 15 may be an anode.

  The organic EL display 11 is not limited to the so-called bottom emission type, and may have a top emission type configuration in which light is emitted from the side opposite to the substrate 12. In the case of the top emission type, the substrate 12 and the first electrode 13 disposed on the substrate 12 side may not be transparent.

○ transparent electrodes constituting the first electrode 13 is not limited to ITO, IZO (indium zinc oxide), ZnO (zinc oxide), can be used SnO ₂ (tin oxide) or the like.
The second electrode 15 is not limited to silver or aluminum, and a known cathode material that has been conventionally used can be used. For example, a metal such as gold, copper, or chromium, or an alloy thereof may be used.

(Circle) the 2nd electrode 15 does not need to be provided with the light reflection function.
In the first electrode forming step, the substrate 12 on which the first electrode 13 is provided in advance may be prepared.

(A) is a partial schematic cross section of the organic EL display of one embodiment, (b) is a schematic partial perspective view in which the sealing film is omitted. (A) is a schematic partial perspective view explaining the manufacturing process of an organic EL display, (b), (c) is a partial schematic cross section explaining the manufacturing process of an organic EL display. (A)-(c) is a partial schematic cross section explaining the manufacturing process of an organic electroluminescent display. (A), (b) is a partial schematic cross section of the organic electroluminescent display in another embodiment. The partial schematic cross section which shows the formation state of the 2nd resist layer in another embodiment. (A), (b) is a partial schematic cross section which shows a part of manufacturing process in a prior art.

Explanation of symbols

  S1, S2, S3 ... spacing, 11 ... organic EL display, 12 ... substrate, 13 ... first electrode, 14 ... organic EL layer, 15 ... second electrode, 16 ... second electrode coating layer, 17 ... resist layer, 18 ... sealing film, 20 ... second electrode forming layer, 21 ... second electrode covering layer forming layer, 22 ... first resist layer, 23 ... second resist layer.

Claims (8)

An organic electroluminescence display in which organic electroluminescence elements are arranged in a matrix,
A substrate,
A plurality of first electrodes formed in stripes on the substrate;
An organic electroluminescence layer formed to cover the first electrode;
A plurality of second electrodes formed in a stripe shape intersecting the first electrode on the organic electroluminescence layer;
A plurality of second electrode coating layers formed in parallel with the plurality of second electrodes on the second electrode,
The second electrode coating layer is formed of a material having a higher etching rate with respect to the etching agent for the second electrode than the material of the second electrode, and the interval between the adjacent second electrode coating layers is adjacent. An organic electroluminescence display that is set wider than the interval between the second electrodes.   The organic electroluminescence display according to claim 1, wherein the second electrode coating layer is formed of an inorganic nonmetal.   A resist layer that covers a part of each of the second electrode covering layers and each of the second electrodes and that is formed along each of the second electrodes is provided, and one end of the resist layer in the width direction is provided on each of the second electrodes. The organic electroluminescence display according to claim 1, wherein the organic electroluminescence display is formed so as to coincide with one end in the width direction.   The sealing film which coat | covers the exposed part of the said 1st electrode formed on the said board | substrate, the said organic electroluminescent layer, the said 2nd electrode, and the said 2nd electrode coating layer is provided. The organic electroluminescent display as described in any one of Claims. A method of manufacturing an organic electroluminescence display in which organic electroluminescence elements are arranged in a matrix,
A first electrode forming step of forming a plurality of first electrodes in a stripe shape on a substrate;
An organic electroluminescence layer forming step which is performed after the first electrode formation step and forms an organic electroluminescence layer so as to cover the first electrode;
A second electrode forming layer forming step which is performed after the organic electroluminescent layer forming step and forms a second electrode forming layer on the organic electroluminescent layer;
A second electrode coating layer forming layer forming step of forming a second electrode coating layer forming layer on the second electrode forming layer;
A first resist layer forming step of forming a first resist layer on the second electrode coating layer forming layer;
A second electrode coating layer forming step of etching the second electrode coating layer forming layer to form a striped second electrode coating layer;
A second resist layer forming step of forming a second resist layer so as to cover a part of the second electrode forming layer exposed from the second electrode covering layer;
A method of manufacturing an organic electroluminescence display, comprising: a second electrode forming step of forming a second electrode in a stripe shape by dry etching the second electrode forming layer.   The method of manufacturing an organic electroluminescence display according to claim 5, wherein the second resist layer is formed after removing the first resist layer.   After the second electrode forming step, the exposed portions of the first electrode, the organic electroluminescence layer, the second electrode, the second electrode coating layer, and the second resist layer formed on the substrate are covered. The manufacturing method of the organic electroluminescent display of Claim 5 or Claim 6 provided with the sealing film formation process which forms the sealing film to perform.   The method of manufacturing an organic electroluminescence display according to claim 7, wherein the second electrode covering layer and the sealing film are formed of the same material.

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