JP2007525594A5

JP2007525594A5 -

Info

Publication number: JP2007525594A5
Application number: JP2006543928A
Authority: JP
Filing date: 2004-12-07
Publication date: 2007-10-25
Anticipated expiration: 2024-12-07

Claims

A method for growing material on a surface of a wafer, comprising:
Applying an electroless plating solution maintained at a temperature at which plating reaction does not easily occur to the surface of the wafer;
Exposing the surface of the wafer to radiant energy, wherein the radiant energy raises the temperature of the wafer surface until a plating reaction occurs at a boundary between the surface of the wafer and the electroless plating solution. and the step of,
Controlling the wavelength region of the radiant energy such that material present on the surface of the wafer is selectively heated by the radiant energy .

A method for growing material on a surface of a wafer according to claim 1, further comprising:
A method comprising a step of controlling the temperature of the electroless plating solution so as to be sufficiently lower than a temperature at which a plating reaction occurs.

A method for growing material on the surface of a wafer according to claim 1, comprising the steps of:
The method of exposing the surface of the wafer to radiant energy is performed by irradiating the radiant energy with pulses.

A method for growing material on the surface of a wafer according to claim 1, comprising the steps of:
The method of exposing the surface of the wafer to radiant energy includes transmitting the radiant energy through the wafer to reach the surface of the wafer.

An apparatus for growing material on the surface of a wafer,
A tank defined by an enclosing wall and a bottom and configured to contain an electroless plating solution;
A wafer support structure provided in the tank and configured to support the wafer at a position immersed in the electroless plating solution accommodated in the tank;
A radiant energy source disposed above the wafer support structure and oriented to direct radiant energy toward the wafer supported at a location submerged in the electroless plating solution, the radiant energy source comprising: An apparatus configured to generate radiant energy having a wavelength region capable of selectively heating a particular material present on the surface of the wafer to which the radiant energy is incident .

An apparatus for growing material on a surface of a wafer according to claim 5,
The radiant energy source is configured to collimate the radiant energy and is further configured to scan the surface of the wafer.

An apparatus for growing material on a surface of a wafer according to claim 5,
The wafer support structure is an apparatus configured to reciprocate the wafer.

An apparatus for growing material on the surface of a wafer,
A tank defined by an enclosing wall and a bottom and configured to contain an electroless plating solution;
A wafer holder configured to insert a wafer into the electroless plating solution stored in the tank, and a wafer holder configured to take out the wafer from the electroless plating solution stored in the tank;
Provided above the electroless plating solution contained in the tank and oriented to direct radiant energy to the wafer when the wafer is taken out of the electroless plating solution contained in the tank A device comprising a radiant energy source.

An apparatus for growing material on the surface of a wafer according to claim 8 comprising:
The radiant energy source is an apparatus configured to generate radiant energy having a wavelength region capable of selectively heating material present on the surface of the wafer to which the radiant energy is incident.

An apparatus for growing material on the surface of a wafer,
A tank defined by an enclosing wall and a bottom and configured to contain an electroless plating solution;
A wafer support structure provided in the tank and configured to support the wafer at a position immersed in the electroless plating solution accommodated in the tank;
A radiant energy source provided in the wafer support structure and directed to direct radiant energy toward a bottom surface of the wafer supported at a position submerged in the electroless plating solution, wherein the radiant energy is A radiant energy source capable of passing through the wafer to heat the material present on the upper surface of the wafer, the radiant energy source being a specific surface present on the surface of the wafer to which the radiant energy is incident An apparatus configured to generate radiant energy having a wavelength region that is capable of selectively heating a material .

An apparatus for growing a planarization layer on a wafer,
A tank defined by an enclosing wall and a bottom and configured to contain an electroless plating solution;
A wafer support structure provided in the tank and configured to support the wafer at a position immersed in the electroless plating solution accommodated in the tank;
The wafer support structure is provided above and substantially parallel to the wafer support structure, and can move in a direction approaching the wafer support structure and a direction away from the wafer support structure, and is supported by the wafer support structure. A planar member that can be disposed at a position close to the wafer;
A radiant energy source provided above the planar member and above the wafer support structure so that the radiant energy passes through the planar member and is directed toward the wafer supported by the wafer support structure. A device comprising a directed radiant energy source.

An apparatus for growing a planarization layer on a wafer according to claim 11,
The radiant energy source is an apparatus configured to generate radiant energy having a wavelength region capable of selectively heating material present on the surface of the wafer to which the radiant energy is incident.

An apparatus for growing a planarization layer on a wafer according to claim 11,
The planar member is an apparatus composed of a material capable of transmitting radiant energy emitted from the radiant energy source toward the wafer support structure.

The apparatus for growing a planarization layer on a wafer according to claim 11, further comprising:
An apparatus comprising a backing member applied to the back surface of the planar member that is not facing the wafer support structure and configured to control the planarity of the planar member.

A method for applying a planarization layer on a surface of a wafer,
Applying an electroless plating solution maintained at a temperature at which plating reaction does not easily occur to the surface of the wafer;
A step of disposing a planar member serving to expel a part of the electroless plating solution interposed between the wafer surface and an upper position close to an upper portion of the wafer surface;
Radiating energy to the surface of the wafer, the radiant energy passing through the planar member and reaching the state where the plating reaction occurs at the boundary between the electroless plating solution and the wafer surface. The method can comprise raising the temperature, and the plating reaction comprises a step of forming a planarization layer between the wafer surface and the planar member.

A method for applying a planarization layer on a surface of a wafer according to claim 15, further comprising:
Controlling the wavelength range of the radiant energy such that material present on the surface of the wafer is selectively heated by the radiant energy.

A method for applying a planarization layer on a surface of a wafer according to claim 16, further comprising:
Monitoring the condition of the wafer surface such that the wavelength region of the radiant energy can be reliably set to a wavelength region that selectively heats the material present on the wafer surface.

A method for applying a planarization layer on a surface of a wafer according to claim 15, further comprising:
Stopping the step of exposing the wafer surface to radiant energy;
Removing the planar member from the position proximate to the top of the wafer surface, wherein the removal of the planar member serves to cool the wafer surface and replenish reactants present in the vicinity of the wafer surface. Flowing an unused electroless plating solution over the wafer surface;
A method comprising: repeating the step of disposing the planar member at an upper position close to an upper portion of the wafer surface; and repeating the step of exposing the wafer surface to radiant energy.