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JP2007288180A - Wiring structure, multilayer wiring board and electronic device - Google Patents

Wiring structure, multilayer wiring board and electronic device Download PDF

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JP2007288180A
JP2007288180A JP2007076797A JP2007076797A JP2007288180A JP 2007288180 A JP2007288180 A JP 2007288180A JP 2007076797 A JP2007076797 A JP 2007076797A JP 2007076797 A JP2007076797 A JP 2007076797A JP 2007288180 A JP2007288180 A JP 2007288180A
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signal line
differential signal
reference potential
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Masanao Kabumoto
正尚 株元
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

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Abstract

【課題】平衡伝送経路と不平衡伝送経路とが混在する多層配線基板において、双方の特性インピーダンスを容易に整合させ、配線密度が高く、半導体素子の高速動作に対応可能な多層配線基板を提供すること。
【解決手段】一般信号線1と、互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線2と、一般信号線1および差動信号線2に間隔をあけて配置され、差動信号線2と電磁結合する部位に非形成部を有する基準電位層4と、を具備する。
【選択図】図1
In a multilayer wiring board in which balanced transmission paths and unbalanced transmission paths are mixed, a multilayer wiring board that easily matches the characteristic impedances of both, has a high wiring density, and can cope with high-speed operation of a semiconductor element. thing.
A general signal line, a differential signal line composed of a pair of signal lines for transmitting differential signals whose waveforms are inverted from each other, and the general signal line and the differential signal line are spaced apart from each other. And a reference potential layer 4 that is disposed and has a non-formed portion at a portion electromagnetically coupled to the differential signal line 2.
[Selection] Figure 1

Description

本発明は、高速で動作する半導体素子および光半導体素子等の電子部品を接続するのに好適な差動信号線を有する配線構造、およびそれを用いた多層配線基板、ならびに電子装置に関するものであり、特に差動信号線と一般信号線とを備えた配線構造、多層配線基板および電子装置に関するものである。   The present invention relates to a wiring structure having a differential signal line suitable for connecting electronic components such as a semiconductor element and an optical semiconductor element that operate at high speed, a multilayer wiring board using the wiring structure, and an electronic device. In particular, the present invention relates to a wiring structure including a differential signal line and a general signal line, a multilayer wiring board, and an electronic device.

従来、マイクロプロセッサやASIC(Application Specific Integrated Circuit)等に代表される半導体素子をはじめとする電子部品が多層配線基板に搭載され、電子装置として使用される。情報処理能力の向上の要求が高まる中で、半導体素子の動作速度の高速化が進んでいるため、多層配線基板の内部配線のうちの信号配線について、特性インピーダンスの整合や信号配線間のクロストークノイズの低減等の電気特性の向上が求められてきた。   2. Description of the Related Art Conventionally, electronic components such as a semiconductor element represented by a microprocessor, an ASIC (Application Specific Integrated Circuit), and the like are mounted on a multilayer wiring board and used as an electronic device. As the demand for improving information processing capabilities is increasing, the operating speed of semiconductor devices is increasing. Therefore, matching of characteristic impedance and crosstalk between signal wirings are required for signal wiring among internal wiring of multilayer wiring boards. Improvements in electrical characteristics such as noise reduction have been demanded.

このような要求に対応するために、信号配設の線路構造として、ストリップ線路構造やマイクロストリップ線路構造が用いられるようになっている。マイクロストリップ線路構造は、信号配線の上または下に絶縁層を介して広面積の接地(グランド)導体層を具備する構造である。ストリップ線路構造は、信号配線の上下に絶縁層を介して広面積の接地(グランド)導体層を具備する構造である。   In order to meet such a demand, a strip line structure or a microstrip line structure is used as a signal arrangement line structure. The microstrip line structure is a structure including a large-area ground (ground) conductor layer via an insulating layer above or below a signal wiring. The stripline structure is a structure including a ground (ground) conductor layer having a large area via insulating layers above and below a signal wiring.

近年の半導体素子のさらなる高速化に対応して数GHz程度の高周波信号を伝送するようになった。高周波信号の伝送には不平衡伝送経路と平衡伝送経路との2つの方法がある。不平衡伝送経路は、接地導体層と単一の信号配線(一般信号線)で高周波信号を伝送するものである。また、平衡伝送経路は、接地導体層と略平行な2本の信号配線(差動信号線)で高周波信号を伝送するものである。この差動信号線では、反転信号と非反転信号との2相信号をそれぞれの信号配線に入力し、それぞれの差分を取って一つの信号と見なす。その結果、ノイズは相殺され、歪みの少ない信号を伝送することができ、より高速化が可能となる。その具体例が、特許文献1に記載されている。   In response to the further increase in speed of semiconductor devices in recent years, high-frequency signals of about several GHz have been transmitted. There are two methods for transmitting a high-frequency signal: an unbalanced transmission path and a balanced transmission path. The unbalanced transmission path transmits a high-frequency signal through a ground conductor layer and a single signal wiring (general signal line). The balanced transmission path transmits a high-frequency signal through two signal wirings (differential signal lines) substantially parallel to the ground conductor layer. In this differential signal line, a two-phase signal of an inverted signal and a non-inverted signal is input to each signal wiring, and each difference is taken as one signal. As a result, the noise is canceled out, and a signal with less distortion can be transmitted, and the speed can be further increased. A specific example is described in Patent Document 1.

特に、ASIC等の半導体素子を搭載する多層配線基板では、高性能化により多ピン化が加速している。多ピン化によるパッケージの大型化を抑制するため、ノイズ等が重大な影響を及ぼす信号の伝送に差動信号線を用い、その他の信号には従来からの一般信号線を用いることによって、1つの多層配線基板内に差動信号線と一般信号線とが混在して用いられるようになってきている。このような多層配線基板では、それぞれの伝送方式に合った、異なる特性インピーダンスに整合させる必要があり、一般的には一般信号線は50Ωに、差動信号線は100Ωに整合される。   In particular, in a multilayer wiring board on which a semiconductor element such as an ASIC is mounted, the increase in the number of pins is accelerating due to high performance. In order to suppress an increase in the size of the package due to the increase in the number of pins, a differential signal line is used for transmission of a signal in which noise or the like has a significant effect, and a conventional general signal line is used for other signals. A differential signal line and a general signal line are mixedly used in a multilayer wiring board. In such a multilayer wiring board, it is necessary to match with different characteristic impedances suitable for each transmission method. Generally, a general signal line is matched with 50Ω and a differential signal line is matched with 100Ω.

一般的に、信号配線の特性インピーダンスの整合は、(1)信号配線幅の調整で行う方法と、(2)信号配線と接地導体層との間の絶縁層の厚さまたは誘電率の調整で行う方法がある。   In general, the matching of characteristic impedance of signal wiring is performed by (1) adjusting the signal wiring width and (2) adjusting the thickness or dielectric constant of the insulating layer between the signal wiring and the ground conductor layer. There is a way to do it.

信号配線幅の調整で特性インピーダンス整合を行なう方法では、差動信号線の配線幅よりも一般信号線の配線幅を大きくする必要があるので、配線密度を高くすることができないという問題があった。一方、絶縁層の厚みまたは誘電率の調整でインピーダンスの整合を行なう方法では、一つの絶縁層の厚みを全体的に変えることはできるが、実際には一つの絶縁層において部分的に厚みを変えることや絶縁層の材質を部分的に変えることが必要であり、そのようなことは現実的ではなく実施が非常に困難である。   In the method of matching the characteristic impedance by adjusting the signal wiring width, it is necessary to make the wiring width of the general signal line larger than the wiring width of the differential signal line, so that there is a problem that the wiring density cannot be increased. . On the other hand, in the method of matching impedance by adjusting the thickness or dielectric constant of the insulating layer, the thickness of one insulating layer can be changed as a whole, but in practice, the thickness is partially changed in one insulating layer. And it is necessary to change the material of the insulating layer partially, which is not realistic and very difficult to implement.

このような問題を解決するために、特許文献2において、図5に断面図で示すような多層配線基板16が提案されている。最上層に形成した電源導体層18または接地導体層14と、最下層に形成した電源導体層18または接地導体層14との間で平衡伝送線路を形成する差動信号線12が配置された領域がある。また、差動信号線12と同一面に電源導体層18または接地導体層14を配置し、この電源導体層18または接地導体層14と最上下それぞれの電源導体層18または接地導体層14との間に一般信号線11を配置することにより不平衡伝送線路が垂直方向に積層された状態で配置された領域とを有する。   In order to solve such a problem, Patent Document 2 proposes a multilayer wiring board 16 as shown in a sectional view in FIG. Region where the differential signal line 12 that forms a balanced transmission line is disposed between the power supply conductor layer 18 or ground conductor layer 14 formed in the uppermost layer and the power supply conductor layer 18 or ground conductor layer 14 formed in the lowermost layer. There is. Further, the power supply conductor layer 18 or the ground conductor layer 14 is disposed on the same surface as the differential signal line 12, and the power supply conductor layer 18 or the ground conductor layer 14 is connected to the power conductor layer 18 or the ground conductor layer 14 at the lowermost position. By disposing the general signal line 11 therebetween, the unbalanced transmission line is arranged in a state where it is stacked in the vertical direction.

1つの多層配線基板16内の一般信号線11、差動信号線12および電源導体層18や接地導体層14の配置により、1つの絶縁層13において部分的に厚みを変えたり絶縁層13の材質を部分的に変えたりすることなくそれぞれのインピーダンスを整合させることができるという利点がある。
特開平2−240994号公報 特開2002−158452号公報
Depending on the arrangement of the general signal line 11, differential signal line 12, power supply conductor layer 18 and ground conductor layer 14 in one multilayer wiring board 16, the thickness of the insulating layer 13 may be partially changed or the material of the insulating layer 13 may be changed. There is an advantage that the respective impedances can be matched without partially changing.
JP-A-2-240994 Japanese Patent Laid-Open No. 2002-158452

しかし、1つの差動信号線12を形成するのに少なくとも5層の絶縁層13を要するものであることから、多層配線基板16の厚みが厚くなり、多層配線基板に対する小型化の一つである薄型化に対応できないという問題点があった。   However, since at least five insulating layers 13 are required to form one differential signal line 12, the thickness of the multilayer wiring board 16 is increased, which is one of the miniaturization of the multilayer wiring board. There was a problem that it could not cope with the thinning.

また、絶縁層の層数が多く多層配線基板の厚みが厚いと、多層配線基板の表面に形成された半導体素子接続用電極と多層配線基板の裏面に形成された外部接続用電極との間の電源インダクタンスが増大するため、半導体素子の高速動作を妨げてしまうという問題があった。   In addition, when the number of insulating layers is large and the thickness of the multilayer wiring board is large, the gap between the semiconductor element connection electrode formed on the surface of the multilayer wiring board and the external connection electrode formed on the back surface of the multilayer wiring board. Since the power supply inductance increases, there is a problem that the high-speed operation of the semiconductor element is hindered.

本発明は、上記従来の問題点を解決するために完成されたものであり、その目的は、平衡伝送経路と不平衡伝送経路とが混在する多層配線基板において、双方の特性インピーダンスを容易に整合させ、配線密度が高く、半導体素子の高速動作に対応可能な多層配線基板を提供することにある。   The present invention has been completed in order to solve the above-mentioned conventional problems, and its purpose is to easily match both characteristic impedances in a multilayer wiring board in which balanced transmission paths and unbalanced transmission paths are mixed. Another object of the present invention is to provide a multilayer wiring board having a high wiring density and capable of handling a high-speed operation of a semiconductor element.

本発明の配線構造は、一般信号線と、互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、前記一般信号線および前記差動信号線に間隔をあけて配置され、前記差動信号線と電磁結合する部位に非形成部を有する基準電位層と、を具備することを特徴とする配線構造。   In the wiring structure of the present invention, a general signal line, a differential signal line composed of a pair of signal wirings for transmitting differential signals whose waveforms are inverted from each other, and the general signal line and the differential signal line are spaced apart from each other. And a reference potential layer having a non-formed portion at a portion electromagnetically coupled to the differential signal line.

本発明の配線構造において好ましくは、前記基準電位層を平面視して、前記非形成部が前記差動信号線と重なることを特徴とする。   In the wiring structure according to the aspect of the invention, it is preferable that the non-formation portion overlaps the differential signal line in a plan view of the reference potential layer.

本発明の配線構造において好ましくは、前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする。   In the wiring structure of the present invention, it is preferable that the general signal line and the differential signal line are formed on the same surface.

本発明の配線構造において好ましくは、前記非形成部は、複数のものが間隔をあけて配置されたものであることを特徴とする。   In the wiring structure of the present invention, it is preferable that the non-formed portion is a plurality of non-formed portions arranged at intervals.

本発明の配線構造において好ましくは、前記複数の非形成部の各々は、前記差動信号線の延在方向に沿った長さが前記差動信号線で伝送される信号の波長の1/4以下であることを特徴とする。   In the wiring structure according to the aspect of the invention, it is preferable that each of the plurality of non-forming portions has a length along the extending direction of the differential signal line that is ¼ of the wavelength of the signal transmitted through the differential signal line. It is characterized by the following.

本発明の配線構造において好ましくは、前記一般信号線および前記差動信号線に対して前記基準電位層と反対側に第二の基準電位層をさらに有することを特徴とする。   Preferably, the wiring structure of the present invention further includes a second reference potential layer on a side opposite to the reference potential layer with respect to the general signal line and the differential signal line.

本発明の配線構造は、一般信号線と、互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、前記一般信号線および前記差動信号線に間隔をあけて配置された基準電位層とを具備しており、前記基準電位層を平面視したときに、前記差動信号線の面積に対する前記基準電位層の前記差動信号線と電磁結合する部位の面積の比率が、前記一般信号線の面積に対する前記基準電位層の前記一般信号線と電磁結合する部位の面積の比率よりも小さいことを特徴とする。   In the wiring structure of the present invention, a general signal line, a differential signal line composed of a pair of signal wirings for transmitting differential signals whose waveforms are inverted from each other, and the general signal line and the differential signal line are spaced apart from each other. The area of the portion of the reference potential layer that is electromagnetically coupled to the differential signal line with respect to the area of the differential signal line when the reference potential layer is viewed in plan Is smaller than the ratio of the area of the portion of the reference potential layer that is electromagnetically coupled to the general signal line to the area of the general signal line.

本発明の配線構造において好ましくは、前記基準電位層の前記差動信号線と電磁結合する部位の面積が、前記基準電位層と前記差動信号線との重なり面積であり、前記基準電位層の前記一般信号線と電磁結合する部位の面積が、前記基準電位層と前記一般信号線との重なり面積であることを特徴とする。   In the wiring structure of the present invention, preferably, the area of the portion of the reference potential layer that is electromagnetically coupled to the differential signal line is an overlapping area of the reference potential layer and the differential signal line, The area of the portion that is electromagnetically coupled to the general signal line is an overlapping area of the reference potential layer and the general signal line.

本発明の配線構造において好ましくは、前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする。   In the wiring structure of the present invention, it is preferable that the general signal line and the differential signal line are formed on the same surface.

本発明の多層配線基板は、一般信号線と、互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、前記一般信号線および前記差動信号線に絶縁層を介して配置され、前記差動信号線と電磁結合する部位に非形成部を有する基準電位層と、を具備することを特徴とする。   The multilayer wiring board of the present invention includes a general signal line, a differential signal line composed of a pair of signal wirings for transmitting differential signals whose waveforms are inverted from each other, and an insulating layer on the general signal line and the differential signal line. And a reference potential layer having a non-formed portion at a portion that is electromagnetically coupled to the differential signal line.

本発明の多層配線基板において好ましくは、前記基準電位層を平面視して、前記非形成部が前記差動信号線と重なることを特徴とする。   In the multilayer wiring board of the present invention, it is preferable that the non-formation portion overlaps the differential signal line in a plan view of the reference potential layer.

本発明の多層配線基板において好ましくは、前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする。   In the multilayer wiring board of the present invention, preferably, the general signal line and the differential signal line are formed on the same surface.

本発明の多層配線基板において好ましくは、前記非形成部は、複数のものが間隔をあけて配置されたものであることを特徴とする。   In the multilayer wiring board of the present invention, it is preferable that the non-formed portion is a plurality of non-formed portions arranged at intervals.

本発明の多層配線基板において好ましくは、前記複数の非形成部の各々は、前記差動信号線の延在方向に沿った長さが前記差動信号線で伝送される信号の波長の1/4以下であることを特徴とする。   In the multilayer wiring board of the present invention, preferably, each of the plurality of non-formed portions has a length along the extending direction of the differential signal line of 1 / wavelength of a signal transmitted through the differential signal line. 4 or less.

本発明の多層配線基板において好ましくは、前記一般信号線および前記差動信号線に対して前記基準電位層と反対側に絶縁層を介して第二の基準電位層をさらに有することを特徴とする。   Preferably, the multilayer wiring board of the present invention further includes a second reference potential layer via an insulating layer on the side opposite to the reference potential layer with respect to the general signal line and the differential signal line. .

本発明の多層配線基板は、一般信号線と、互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、前記一般信号線および前記差動信号線に絶縁層を介して配置された基準電位層とを具備しており、前記基準電位層を平面視したときに、前記差動信号線の面積に対する前記基準電位層の前記差動信号線と電磁結合する部位の面積の比率が、前記一般信号線の面積に対する前記基準電位層の前記一般信号線と電磁結合する部位の面積の比率よりも小さいことを特徴とする。   The multilayer wiring board of the present invention includes a general signal line, a differential signal line composed of a pair of signal wirings for transmitting differential signals whose waveforms are inverted from each other, and an insulating layer on the general signal line and the differential signal line. A portion that is electromagnetically coupled to the differential signal line of the reference potential layer with respect to the area of the differential signal line when the reference potential layer is viewed in plan Is smaller than the ratio of the area of the portion of the reference potential layer that is electromagnetically coupled to the general signal line to the area of the general signal line.

本発明の多層配線基板において好ましくは、前記基準電位層の前記差動信号線と電磁結合する部位の面積が、前記基準電位層と前記差動信号線との重なり面積であり、前記基準電位層の前記一般信号線と電磁結合する部位の面積が、前記基準電位層と前記一般信号線との重なり面積であることを特徴とする。   In the multilayer wiring board of the present invention, preferably, the area of the portion of the reference potential layer that is electromagnetically coupled to the differential signal line is an overlapping area of the reference potential layer and the differential signal line, and the reference potential layer The area of the portion that is electromagnetically coupled to the general signal line is an overlapping area of the reference potential layer and the general signal line.

本発明の多層配線基板において好ましくは、前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする。   In the multilayer wiring board of the present invention, preferably, the general signal line and the differential signal line are formed on the same surface.

本発明の多層配線基板において好ましくは、上記本発明の多層配線基板と、前記一般信号線および前記差動信号線に電気的に接続された電子部品とを具備することを特徴とする。   The multilayer wiring board of the present invention preferably includes the multilayer wiring board of the present invention and an electronic component electrically connected to the general signal line and the differential signal line.

本発明によれば、差動信号線と接地導体層との間の容量が小さくなり、差動信号線の特性インピーダンスが大きくなる。その結果、一般信号線および差動信号線と接地導体層との間に形成された絶縁層の厚みを大きく異ならせたり、差動信号線の配線幅よりも一般信号線の配線幅を大きくしたりすることなく、一般信号線および差動信号線それぞれの特性インピーダンスを整合させることができる。よって、配線密度を高く設計することが可能となる。   According to the present invention, the capacitance between the differential signal line and the ground conductor layer is reduced, and the characteristic impedance of the differential signal line is increased. As a result, the thickness of the insulating layer formed between the general signal line and the differential signal line and the ground conductor layer is greatly different, or the wiring width of the general signal line is made larger than the wiring width of the differential signal line. Therefore, the characteristic impedances of the general signal line and the differential signal line can be matched. Therefore, it is possible to design the wiring density high.

また、絶縁層の総数を少なくすることができ、多層配線基板の厚みを抑えることができる。その結果、多層配線基板に搭載された半導体素子の高速動作が可能となる。   Further, the total number of insulating layers can be reduced, and the thickness of the multilayer wiring board can be suppressed. As a result, the semiconductor element mounted on the multilayer wiring board can be operated at high speed.

また、接地導体層の開口部を複数の開口部が間隔をあけて配置された構造を採用すると、電流が接地導体層内を差動信号線と交差する方向に流れるための経路を開口部間に有する構造となるので、開口部による電源インダクタンスの上昇やそれに伴う電源ノイズの増大が抑えられ、半導体素子をより高速に動作させることができる。   In addition, when a structure in which a plurality of openings are arranged at intervals in the opening of the ground conductor layer, a path for current to flow in the direction intersecting the differential signal line in the ground conductor layer is provided between the openings. Therefore, the increase in power supply inductance due to the opening and the accompanying increase in power supply noise can be suppressed, and the semiconductor element can be operated at higher speed.

また、上記構成において開口部の差動信号線の長さ方向に沿った長さが、差動信号線に伝送される信号の波長の1/4以下としたときには、差動信号線に伝送される信号が開口部から漏れてしまうことを抑えることができるので、高速信号の伝送をより良好なものとすることができる。   In the above configuration, when the length of the opening along the length direction of the differential signal line is ¼ or less of the wavelength of the signal transmitted to the differential signal line, the signal is transmitted to the differential signal line. Therefore, it is possible to suppress transmission of a high-speed signal from the opening.

本発明の多層配線基板について以下に詳細に説明する。図1は本発明の多層配線基板の実施の形態の一例を示す図であり、図1(a)は本発明の多層配線基板の断面図、図1(b)は図1(a)における要部を上面から透視した要部拡大図である。これらの図において、1は一般信号線、2は差動信号線、2aは差動信号線2を成す第1の信号線路、2bは差動信号線2を成す第2の信号線路、3は絶縁層、4は基準電位層としての接地導体層、5は接地導体層4の中の非形成部(以下、開口部ともいう)、6は多層配線基板、7は表面配線である。   The multilayer wiring board of the present invention will be described in detail below. FIG. 1 is a diagram showing an example of an embodiment of a multilayer wiring board according to the present invention. FIG. 1 (a) is a cross-sectional view of the multilayer wiring board according to the present invention, and FIG. It is the principal part enlarged view which saw through the part from the upper surface. In these figures, 1 is a general signal line, 2 is a differential signal line, 2a is a first signal line forming the differential signal line 2, 2b is a second signal line forming the differential signal line 2, and 3 An insulating layer, 4 is a ground conductor layer as a reference potential layer, 5 is a non-formed portion (hereinafter also referred to as an opening) in the ground conductor layer 4, 6 is a multilayer wiring board, and 7 is a surface wiring.

なお、本発明において基準電位層とは、いわゆる接地導体層や電源層を含み、基準電位に設定された導体層をいう。また、一般信号線は、単一の信号配線が基準電位層に対して一定間隔をあけて配置されたものであり、高周波信号を伝送する不平衡伝送経路を構成するものである。一方、差動信号線は、一定間隔をあけて略平行に並設された一対の信号配線から成り、基準電位層に対して、それぞれの信号配線が略同じ間隔をあけて配置されている。この差動信号線の一方の信号配線には非反転信号が入力され、他方の信号配線には反転信号が入力されて高周波信号を伝送する平衡伝送経路が構成される。この入力された反転信号と非反転信号との2相信号の差分を取って一つの信号と見なすことにより、ノイズは相殺され、歪みの少ない信号を伝送することができ、より高速化が可能となる。   In the present invention, the reference potential layer refers to a conductor layer that includes a so-called ground conductor layer and a power supply layer and is set to a reference potential. In addition, the general signal line is a single signal wiring that is arranged at a predetermined interval with respect to the reference potential layer, and constitutes an unbalanced transmission path for transmitting a high-frequency signal. On the other hand, the differential signal line is composed of a pair of signal wirings arranged in parallel at regular intervals, and each signal wiring is arranged at substantially the same interval with respect to the reference potential layer. A non-inverted signal is input to one signal wiring of the differential signal line, and an inverted signal is input to the other signal wiring to constitute a balanced transmission path for transmitting a high-frequency signal. By taking the difference between the two-phase signal of the input inverted signal and non-inverted signal and considering it as one signal, the noise is canceled out, and a signal with less distortion can be transmitted, resulting in higher speed. Become.

また、本発明において、例えば、一般信号線は1GHz以下の信号を伝送し、差動信号線は2GHz以上の高周波信号を伝送する。   In the present invention, for example, the general signal line transmits a signal of 1 GHz or less, and the differential signal line transmits a high-frequency signal of 2 GHz or more.

本発明の多層配線基板6は、多層基板を構成する絶縁層3間の同一面に配置された一般信号線1と差動信号線2とに上面視で重なるように絶縁層3を介して配置された接地導体層4を有し、接地導体層4は上面視で差動信号線2と重なる部分に開口部5を有することを特徴とするものである。   The multilayer wiring board 6 of the present invention is disposed via the insulating layer 3 so as to overlap the general signal line 1 and the differential signal line 2 disposed on the same surface between the insulating layers 3 constituting the multilayer substrate in a top view. The ground conductor layer 4 has an opening 5 in a portion overlapping the differential signal line 2 in a top view.

図1に示した実施形態では、図1(a)に示すように、絶縁層3bの上面に一般信号線1と、略平行に形成された2つの信号線2aおよび2bからなる差動信号線2とが形成されている。下方の絶縁層3bを介して一般信号線1および差動信号線2に対向させて広面積の接地導体層4が形成されている。図1(b)に示すように、接地導体層4は上面視で差動信号線2と重なる部分に開口部5(破線で示した領域)が形成されている。一般信号線1および差動信号線2の各信号配線と接地導体層4とでマイクロストリップ構造を構成している。多層配線基板6の表面には表面配線7が設けられている。上面には半導体素子等の電子部品を接続するための電極パッド7aが、下面には多層配線基板6を外部配線板に接続するための端子電極7bが設けられている。表面配線7、電極パッド7a、端子電極7b、一般信号線1、差動信号線2および接地導体層4は、絶縁層3を貫通する貫通導体(図示せず)で適宜に電気的に接続される。   In the embodiment shown in FIG. 1, as shown in FIG. 1A, a differential signal line comprising a general signal line 1 and two signal lines 2a and 2b formed substantially parallel to the upper surface of the insulating layer 3b. 2 are formed. A large-area ground conductor layer 4 is formed so as to face the general signal line 1 and the differential signal line 2 through the lower insulating layer 3b. As shown in FIG. 1B, the ground conductor layer 4 has an opening 5 (a region indicated by a broken line) in a portion overlapping the differential signal line 2 in a top view. Each signal wiring of the general signal line 1 and the differential signal line 2 and the ground conductor layer 4 constitute a microstrip structure. A surface wiring 7 is provided on the surface of the multilayer wiring board 6. An electrode pad 7a for connecting an electronic component such as a semiconductor element is provided on the upper surface, and a terminal electrode 7b for connecting the multilayer wiring board 6 to an external wiring board is provided on the lower surface. The surface wiring 7, electrode pad 7 a, terminal electrode 7 b, general signal line 1, differential signal line 2, and ground conductor layer 4 are appropriately electrically connected by a through conductor (not shown) that penetrates the insulating layer 3. The

この構造を採用した本発明の多層配線基板6では、差動信号線2に対向する接地導体層4の面積が小さくなることで差動信号線2と接地導体層4との間の容量が小さくなり、差動信号線2の特性インピーダンスが大きくなる。よって、一般信号線1および差動信号線2と接地導体層4との間に配置された絶縁層3(絶縁層3b)の厚みを同一にして、差動信号線2の配線幅よりも一般信号線1の配線幅を大きくすることなく一般信号線1および差動信号線2それぞれの特性インピーダンスを整合させることができる。   In the multilayer wiring board 6 of the present invention adopting this structure, the capacitance between the differential signal line 2 and the ground conductor layer 4 is reduced by reducing the area of the ground conductor layer 4 facing the differential signal line 2. Thus, the characteristic impedance of the differential signal line 2 is increased. Therefore, the thickness of the insulating layer 3 (insulating layer 3b) disposed between the general signal line 1 and the differential signal line 2 and the ground conductor layer 4 is made the same, and the thickness of the insulating layer 3 is generally larger than the wiring width of the differential signal line 2. The characteristic impedances of the general signal line 1 and the differential signal line 2 can be matched without increasing the wiring width of the signal line 1.

また、差動信号線2の配線幅よりも一般信号線1の配線幅を大きくする必要がないことから、いずれの配線の配線幅も同じく小さいものとすることができるので、配線密度を高く設計することが可能となる。   Moreover, since it is not necessary to make the wiring width of the general signal line 1 larger than the wiring width of the differential signal line 2, the wiring width of any wiring can be made small, so that the wiring density is designed to be high. It becomes possible to do.

そして、一般信号線1と差動信号線2とを同一層に形成するとともに接地導体層4との間の絶縁層3(絶縁層3b)の厚みも同一とした状態で一般信号線1および差動信号線2の特性インピーダンスを整合できる。従来例のように、一般信号線1と差動信号線2とをそれぞれ垂直方向に異なる絶縁層3上に形成する必要がなく、一般信号線1および差動信号線2の上下に各1層ずつの2層の絶縁層3があれば良い簡単な構造である。多層配線基板6に不平衡伝送経路と平衡伝送経路との両方を形成しても、多層基板の厚みを増加させる必要がない。よって、電源インダクタンスの増大およびそれに伴う電源ノイズの増大がないので、多層配線基板6に搭載された半導体素子の高速動作が可能となる。   The general signal line 1 and the differential signal line 2 are formed in the same layer, and the thickness of the insulating layer 3 (insulating layer 3b) between the common signal line 1 and the ground conductor layer 4 is also the same. The characteristic impedance of the dynamic signal line 2 can be matched. Unlike the conventional example, it is not necessary to form the general signal line 1 and the differential signal line 2 on different insulating layers 3 in the vertical direction, and one layer above and below the general signal line 1 and the differential signal line 2. A simple structure is sufficient if there are two insulating layers 3 each. Even if both the unbalanced transmission path and the balanced transmission path are formed on the multilayer wiring board 6, it is not necessary to increase the thickness of the multilayer board. Therefore, since there is no increase in power supply inductance and accompanying power supply noise, the semiconductor element mounted on the multilayer wiring board 6 can be operated at high speed.

一般的に、一般信号線1の特性インピーダンスは50Ωに、差動信号線2の特性インピーダンスは100Ωに設定される場合が多い。絶縁層3bの比誘電率、絶縁層3bの厚み、一般信号線1や差動信号線2の幅および差動信号線2の信号線路2aと信号線路2bとの間隔に応じて開口部5の幅を設計することで、それぞれの特定インピーダンスを上記の好適な値に設定することが容易になる。   In general, the characteristic impedance of the general signal line 1 is often set to 50Ω, and the characteristic impedance of the differential signal line 2 is often set to 100Ω. Depending on the relative dielectric constant of the insulating layer 3b, the thickness of the insulating layer 3b, the width of the general signal line 1 and the differential signal line 2, and the distance between the signal line 2a and the signal line 2b of the differential signal line 2 By designing the width, it becomes easy to set each specific impedance to the above-mentioned preferable value.

なお、図2に図1(a)と同様の断面図で示すように、一般信号線1および差動信号線2の上にも絶縁層3dを介して接地導体層4を形成したストリップ線路構造としてもよく、この場合は上方の接地導体層4にも同様に上面視で差動信号線2と重なる部分に開口部5を設ける。なお、この場合の上下の接地導体層4のうち一方は電源導体層であってもよい。また、図1に示した例では接地導体層4は一般信号線1および差動信号線2の下方に配置されているが、上方に接地導体層4を配置してもよい。   2 shows a strip line structure in which a ground conductor layer 4 is formed on the general signal line 1 and the differential signal line 2 via an insulating layer 3d as shown in a cross-sectional view similar to FIG. In this case, the upper ground conductor layer 4 is similarly provided with an opening 5 in a portion overlapping the differential signal line 2 in a top view. In this case, one of the upper and lower ground conductor layers 4 may be a power conductor layer. In the example shown in FIG. 1, the ground conductor layer 4 is disposed below the general signal line 1 and the differential signal line 2, but the ground conductor layer 4 may be disposed above.

また、開口部5は、複数の開口部5が差動信号線2の長さ方向に沿って間隔をあけて配置されたものであるのが好ましい。これにより、電流が接地導体層4内を差動信号線2と交差する方向に流れるための経路を開口部5間に有する構造となるので、開口部5の形成による電源インダクタンスの上昇やそれに伴う電源ノイズの増大が抑えられ、搭載される半導体素子が高速で動作することができる。   Moreover, it is preferable that the openings 5 are a plurality of openings 5 arranged at intervals along the length direction of the differential signal line 2. As a result, there is a structure having a path between the openings 5 for the current to flow in the direction intersecting the differential signal line 2 in the ground conductor layer 4. An increase in power supply noise is suppressed, and a mounted semiconductor element can operate at high speed.

複数の開口部5間の間隔は可能な限り小さい方が好ましい。これは、開口部5間の間隔の部分では接地導体層4と差動信号線2とが対向することからその間の容量が開口部5を設けた部分より大きくなり、この部分において差動信号線2のインピーダンスが低下するからである。なお、開口部5間の間隔を小さくすることによってこの部分の抵抗値が大きくなり、また電源インダクタンスの上昇を招いてしまうことがある。その場合には、図1(b)と同様の要部拡大図である図3に示すように、適当な抵抗値となるような間隔としておき、この間隔の部分の横にインピーダンス調整用の開口部5aを設けてインピーダンスを調整することで、差動信号線2のインピーダンスの低下の影響を最小に抑えることができる。   The distance between the plurality of openings 5 is preferably as small as possible. This is because the ground conductor layer 4 and the differential signal line 2 face each other at the interval between the openings 5, so that the capacitance between them is larger than the part where the openings 5 are provided. This is because the impedance of 2 decreases. Note that, by reducing the distance between the openings 5, the resistance value of this portion increases, and the power supply inductance may increase. In this case, as shown in FIG. 3 which is an enlarged view of the main part similar to FIG. 1B, an interval is set so as to have an appropriate resistance value, and an impedance adjustment opening is placed beside the interval. By providing the part 5a and adjusting the impedance, it is possible to minimize the influence of the decrease in the impedance of the differential signal line 2.

さらに、複数の開口部5の各々は、その開口部5と重なる差動信号線2の長さ方向に沿った開口部5の長さ(図1(b)に示す長さL)が、この差動信号線2に伝送される高周波信号の波長の1/4以下であることが好ましい。このことから、差動信号線2に伝送される信号が開口部5から漏れてしまうことを抑えることができるので、伝送される信号のロスを抑え高速信号の伝送をより良好なものとすることができる。   Further, each of the plurality of openings 5 has the length of the opening 5 along the length direction of the differential signal line 2 overlapping the opening 5 (length L shown in FIG. 1B). It is preferable that it is 1/4 or less of the wavelength of the high frequency signal transmitted to the differential signal line 2. As a result, it is possible to suppress leakage of the signal transmitted to the differential signal line 2 from the opening 5, thereby reducing the loss of the transmitted signal and improving the transmission of the high-speed signal. Can do.

なお、図1(b)に示すように、差動信号線2が屈曲部を有し、接地導体層4にはこの屈曲部に重なる部分に開口部5が形成される場合は、差動信号線2の長さ方向に沿った開口部5の長さとは、屈曲部の外側の長い方(図1(b)に示す長さL1)である。   As shown in FIG. 1B, when the differential signal line 2 has a bent portion and the opening 5 is formed in the ground conductor layer 4 at a portion overlapping the bent portion, the differential signal line 2 The length of the opening 5 along the length direction of the line 2 is the longer outside of the bent portion (length L1 shown in FIG. 1B).

また、この例における開口部5は、図1に示すように差動信号線2を構成する一対の信号線2a・2bの各々に重なるように一対の開口部5が設けられているが、図4に図1(b)と同様の要部拡大図で示すように、1つの開口部5を一対の信号線2a・2bの両方に重なるように設けてもよい。   The opening 5 in this example is provided with a pair of openings 5 so as to overlap each of the pair of signal lines 2a and 2b constituting the differential signal line 2 as shown in FIG. 4, one opening 5 may be provided so as to overlap both the pair of signal lines 2a and 2b, as shown in an enlarged view of the main part similar to FIG.

例えば、差動信号線2と接地導体層4との間の絶縁層3bの比誘電率が5.4で絶縁層3bの厚みが58μmの場合に、一般信号線1の線幅を50μmとし、厚みを10μmにすると、一般信号線1の特性インピーダンスは50Ωに整合される。このとき、差動信号線2を構成する一対の信号線2a・2bをいずれも線幅を50μm、厚みを10μmとし、配線間隔を150μmとして、差動信号線2の信号線2a・2bの各々に重なる一対の開口部5のそれぞれの幅を40μm〜95μmとすると、差動信号線2の特性インピーダンスは略100Ωに整合することができる。ここで、略100Ωとは通常のインピーダンス整合に求められる±5%の範囲にあることであり、95〜105Ωである。なお、この幅は、一対の開口部5のそれぞれを、上面視して開口部5の幅の中心を通る中心線と一対の信号線2a・2bのそれぞれの中心線とが重なるように配置した場合である。このとき接地導体層4に開口部5を設けないと、差動信号線2の特性インピーダンスは93Ωとなってしまう。   For example, when the relative dielectric constant of the insulating layer 3b between the differential signal line 2 and the ground conductor layer 4 is 5.4 and the thickness of the insulating layer 3b is 58 μm, the line width of the general signal line 1 is 50 μm and the thickness is When the thickness is 10 μm, the characteristic impedance of the general signal line 1 is matched to 50Ω. At this time, each of the pair of signal lines 2a and 2b constituting the differential signal line 2 has a line width of 50 μm, a thickness of 10 μm, a wiring interval of 150 μm, and each of the signal lines 2a and 2b of the differential signal line 2 If the width of each of the pair of openings 5 overlapping each other is 40 μm to 95 μm, the characteristic impedance of the differential signal line 2 can be matched to approximately 100Ω. Here, approximately 100Ω means that it is in the range of ± 5% required for normal impedance matching, and is 95 to 105Ω. The width of each of the pair of openings 5 is arranged so that the center line passing through the center of the width of the opening 5 and the center lines of the pair of signal lines 2a and 2b overlap each other when viewed from above. Is the case. If the opening 5 is not provided in the ground conductor layer 4 at this time, the characteristic impedance of the differential signal line 2 is 93Ω.

この例において差動信号線2を構成する一対の信号線2a・2bのそれぞれの線幅は同じ50μmで配線間隔のみを100μmとした場合は、一対の開口部5のそれぞれの幅を80μm〜160μmとすることで差動信号線2の特性インピーダンスを略100Ωに整合することができる。この場合は、開口部5の幅が150μm以上では図4に示すような一対の信号線2a・2bの両方に重なる1つの開口部5となり、150μmを超えると一対の開口部5が重なることとなる。例えば、幅が160μmの場合は一対の開口部5が互いに10μmずつ重なって幅が310μmの1つの開口部5となる。   In this example, when the line width of the pair of signal lines 2a and 2b constituting the differential signal line 2 is the same 50 μm and only the wiring interval is 100 μm, the width of each of the pair of openings 5 is 80 μm to 160 μm. Thus, the characteristic impedance of the differential signal line 2 can be matched to approximately 100Ω. In this case, when the width of the opening 5 is 150 μm or more, one opening 5 overlaps both the pair of signal lines 2a and 2b as shown in FIG. 4, and when the width exceeds 150 μm, the pair of opening 5 overlaps. Become. For example, when the width is 160 μm, the pair of openings 5 overlap each other by 10 μm to form one opening 5 having a width of 310 μm.

また、上記の例において絶縁層3bの厚みを50μmとした場合は、一般信号線1の線幅を40μmとすると一般信号線1の特性インピーダンスは50Ωに整合される。同時に、差動信号線2を構成する一対の信号線2a・2bのそれぞれの線幅を同じく40μmとし、配線間隔を全て150μmとすると、差動信号線2の特性インピーダンスを略100Ωに整合するには開口部5の幅を15μm〜75μmに調整すればよい。   In the above example, when the thickness of the insulating layer 3b is 50 μm, the characteristic impedance of the general signal line 1 is matched to 50Ω when the line width of the general signal line 1 is 40 μm. At the same time, if the line width of each of the pair of signal lines 2a and 2b constituting the differential signal line 2 is set to 40 μm and the wiring intervals are all set to 150 μm, the characteristic impedance of the differential signal line 2 is matched to about 100Ω. The width of the opening 5 may be adjusted to 15 μm to 75 μm.

また、上記の例において一般信号線1および差動信号線2の線幅や配線間隔が同じで絶縁層3bの比誘電率が7.6の場合は、絶縁層3bの厚みを80μmとすると、一般信号線1の特性インピーダンスは50Ωに整合される。同時に、差動信号線2の特性インピーダンスを略100Ωに整合するには開口部5の幅を115μm〜260μmとすればよい。   Further, in the above example, when the line width and the wiring interval of the general signal line 1 and the differential signal line 2 are the same and the relative dielectric constant of the insulating layer 3b is 7.6, if the thickness of the insulating layer 3b is 80 μm, The characteristic impedance of line 1 is matched to 50Ω. At the same time, in order to match the characteristic impedance of the differential signal line 2 to approximately 100Ω, the width of the opening 5 may be set to 115 μm to 260 μm.

このように開口部5の幅は、絶縁層3bの比誘電率および厚み、また差動信号線2の信号線2a・2bの線幅や配線間隔に応じて適宜設計すればよい。   As described above, the width of the opening 5 may be appropriately designed according to the relative dielectric constant and thickness of the insulating layer 3b and the line widths and wiring intervals of the signal lines 2a and 2b of the differential signal line 2.

また、開口部5の差動信号線2の長さ方向に沿った長さは、特性インピーダンスの値には関係しないが、上述したように差動信号線2に伝送される信号が開口部5から漏れてしまうことを抑えるためには差動信号線2で伝送する高周波信号の波長の1/4以下であることが好ましい。例えば、差動信号線2で伝送する信号の周波数が10GHzの場合には、開口部5の長さは3.2mm以下とするとよい。   Further, the length of the opening 5 along the length direction of the differential signal line 2 is not related to the value of the characteristic impedance, but the signal transmitted to the differential signal line 2 is transmitted to the opening 5 as described above. In order to suppress the leakage from the high-frequency signal, it is preferable that the wavelength is 1/4 or less of the wavelength of the high-frequency signal transmitted through the differential signal line 2. For example, when the frequency of a signal transmitted through the differential signal line 2 is 10 GHz, the length of the opening 5 is preferably 3.2 mm or less.

開口部5間の間隔は、上述したように可能な限り小さくするのが好ましいが、0.3mm程度であれば、差動信号線2の長さ方向での部分的なインピーダンスの低下の影響も小さく、電源インダクタンスへの影響も小さい。また、インピーダンス調整用の開口部5aの大きさは、開口部5と同様に絶縁層3bの比誘電率および厚み、また差動信号線2の信号線2a・2bの線幅や配線間隔に応じて適宜設計すれば良い。開口部5aの差動信号線2の長さ方向に沿った長さは開口部5の間隔に等しいのが差動信号線2の長さ方向の全域でより確実に特性インピーダンスが整合される点で好ましい。   As described above, the interval between the openings 5 is preferably as small as possible, but if it is about 0.3 mm, the influence of a partial impedance decrease in the length direction of the differential signal line 2 is small. The influence on the power supply inductance is small. The size of the impedance adjusting opening 5a depends on the relative dielectric constant and thickness of the insulating layer 3b as well as the line width and wiring interval of the signal lines 2a and 2b of the differential signal line 2 in the same manner as the opening 5. And design as appropriate. The length of the opening 5a along the length direction of the differential signal line 2 is equal to the interval between the openings 5, and the characteristic impedance is more reliably matched throughout the length direction of the differential signal line 2. Is preferable.

そして、このような本発明の多層配線基板6は、半導体素子収納用パッケージ等の電子部品収納用パッケージや電子部品搭載用基板、多数の半導体素子が搭載されるいわゆるマルチチップモジュールやマルチチップパッケージ、あるいはマザーボード等として使用される。また、この多層配線基板6にコイルインダクタ・クロスインダクタ・チップコンデンサまたは電解コンデンサ等といったものを取着して、電子回路モジュール等を構成することができる。そして、本発明の多層配線基板6に半導体素子などの電子部品を搭載し、電子部品と一般信号線1および差動信号線2とを電気的に接続することにより本発明の電子装置となる。   The multilayer wiring board 6 of the present invention includes an electronic component storage package such as a semiconductor element storage package, an electronic component mounting substrate, a so-called multichip module or multichip package on which a large number of semiconductor elements are mounted, Or it is used as a motherboard. Further, an electronic circuit module or the like can be configured by attaching a coil inductor, a cross inductor, a chip capacitor, an electrolytic capacitor, or the like to the multilayer wiring board 6. Then, an electronic component such as a semiconductor element is mounted on the multilayer wiring board 6 of the present invention, and the electronic component is electrically connected to the general signal line 1 and the differential signal line 2 to obtain the electronic device of the present invention.

本発明の多層配線基板6における絶縁層3は、酸化アルミニウム質焼結体・窒化アルミニウム質焼結体・炭化珪素質焼結体・窒化珪素質焼結体・ムライト質焼結体・ガラスセラミックス等のセラミック材料、あるいはポリイミド・エポキシ樹脂・フッ素樹脂・ポリノルボルネンまたはベンゾシクロブテン等の有機絶縁材料からなるものである。有機絶縁材料からなる場合は、樹脂中にセラミック粉末の無機絶縁物粉末を分散させたり、ガラス繊維に有機絶縁材料を含浸させたりした複合絶縁材料としてもよい。   The insulating layer 3 in the multilayer wiring board 6 of the present invention includes an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a silicon nitride sintered body, a mullite sintered body, a glass ceramic, and the like. Or an organic insulating material such as polyimide, epoxy resin, fluororesin, polynorbornene or benzocyclobutene. In the case of an organic insulating material, a composite insulating material in which an inorganic insulating powder of ceramic powder is dispersed in a resin or glass fibers are impregnated with an organic insulating material may be used.

絶縁層3がセラミック材料の場合は、例えば以下のような従来周知のセラミックグリーンシート積層法を用いて作製することができる。すなわち、セラミック材料の原料粉末に適当な有機バインダや溶剤、必要に応じて分散剤や可塑剤等を添加し、ボールミル法等の混合方法により混合して作製したスラリーをドクターブレード法等の成形方法を採用してシート状となすことによってセラミックグリーンシートを得ることができる。   When the insulating layer 3 is a ceramic material, for example, it can be produced by using a conventionally known ceramic green sheet lamination method as described below. That is, an appropriate organic binder and solvent, if necessary, a dispersant, a plasticizer, etc. are added to the raw material powder of the ceramic material, and a slurry prepared by mixing by a mixing method such as a ball mill method is used as a molding method such as a doctor blade method. A ceramic green sheet can be obtained by adopting a sheet shape.

得られたセラミックグリーンシートを上下に積層し、この積層体を100〜800℃の温度で加熱して脱バインダした後、800〜1600℃の温度で焼成することによって製作される。絶縁層3が酸化アルミニウム質焼結体からなる場合は、還元性雰囲気中で1600℃の温度で焼成される。また、ガラスセラミックスからなる場合は、用いる配線導体に応じて、窒素雰囲気中または大気中で800〜1100℃の温度で焼成される。なお、還元性雰囲気や窒素雰囲気の場合は、加湿することにより脱バインダ性を高めることが行なわれる。   The obtained ceramic green sheets are laminated one above the other, and this laminate is heated at a temperature of 100 to 800 ° C. to remove the binder, and then fired at a temperature of 800 to 1600 ° C. When the insulating layer 3 is made of an aluminum oxide sintered body, it is fired at a temperature of 1600 ° C. in a reducing atmosphere. Moreover, when it consists of glass ceramics, according to the wiring conductor to be used, it bakes at the temperature of 800-1100 degreeC in nitrogen atmosphere or air | atmosphere. In the case of a reducing atmosphere or a nitrogen atmosphere, the binder removal property is increased by humidification.

このときの、一般信号線1および差動信号線2、接地導体層4、表面配線7は、絶縁層3が酸化アルミニウム質焼結体からなる場合は、タングステン(W)・モリブデン(Mo)・モリブデンマンガン(Mo−Mn)の高融点金属粉末メタライズからなり、絶縁層3がガラスセラミックスからなる場合は、銅(Cu)・銀(Ag)または銀パラジウム(Ag−Pd)等の低融点金属粉末メタライズからなる。これらの金属粉末に適当な有機バインダや溶剤、必要に応じて分散剤等を添加混合し、ボールミル・三本ロールミル・プラネタリーミキサー等の混練手段により混練して金属ペーストを作製する。金属ペーストをセラミックグリーンシートに所定のパターンで印刷塗布し、これをセラミックグリーンシートの積層体とともに焼成することによって多層配線基板を形成することができる。   At this time, the general signal line 1 and the differential signal line 2, the ground conductor layer 4, and the surface wiring 7 are tungsten (W), molybdenum (Mo), When the insulating layer 3 is made of glass ceramics and is made of high melting point metal powder metallized molybdenum manganese (Mo-Mn), low melting point metal powder such as copper (Cu), silver (Ag) or silver palladium (Ag-Pd) Consists of metallization. To these metal powders, an appropriate organic binder, a solvent and, if necessary, a dispersant are added and mixed, and kneaded by a kneading means such as a ball mill, a three-roll mill, a planetary mixer or the like to produce a metal paste. A metal paste is printed on a ceramic green sheet in a predetermined pattern and fired together with a laminate of ceramic green sheets to form a multilayer wiring board.

絶縁層3がセラミック材料の場合は、高周波の信号を伝送するためには比較的比誘電率の小さいガラスセラミックスおよび低抵抗の銅系や銀系メタライズを用いるのが好ましい。   In the case where the insulating layer 3 is a ceramic material, it is preferable to use glass ceramics having a relatively low dielectric constant and low resistance copper-based or silver-based metallization in order to transmit a high-frequency signal.

また、絶縁層3が有機絶縁材料、例えばエポキシ樹脂等の熱硬化性樹脂から成る場合であれば、有機樹脂前駆体をスピンコート法もしくはカーテンコート法等により形成し、これを熱硬化処理することによって形成されるエポキシ樹脂等の有機樹脂から成る絶縁層3と、薄膜配線導体層とを交互に積層することによって製作される。   If the insulating layer 3 is made of an organic insulating material, for example, a thermosetting resin such as an epoxy resin, an organic resin precursor is formed by a spin coating method or a curtain coating method, and this is subjected to a thermosetting treatment. The insulating layer 3 made of an organic resin such as an epoxy resin and the thin film wiring conductor layer are alternately laminated.

このときの薄膜配線導体層からなる一般信号線1および差動信号線2、接地導体層4、表面配線7は、銅(Cu)・銀(Ag)・ニッケル(Ni)・クロム(Cr)・チタン(Ti)・金(Au)またはニオブ(Nb)やそれらの合金等の金属材料により形成すればよく、例えばスパッタリング法・真空蒸着法またはめっき法により金属膜を形成した後、フォトリソグラフィ法により所定の配線パターンに形成することができる。あるいは、絶縁層3の上面に所定の配線パターン形状の開口部を有するマスクを形成しておいて金属膜を形成した後、マスクを除去することでも形成することができる。   At this time, the general signal line 1 and the differential signal line 2, the ground conductor layer 4 and the surface wiring 7 made of the thin film wiring conductor layer are made of copper (Cu), silver (Ag), nickel (Ni), chromium (Cr), What is necessary is just to form with metal materials, such as titanium (Ti), gold | metal | money (Au), niobium (Nb), and those alloys, for example, after forming a metal film by sputtering method, vacuum evaporation method, or plating method, and by photolithography method It can be formed in a predetermined wiring pattern. Alternatively, the mask can be formed by forming a mask having an opening having a predetermined wiring pattern shape on the upper surface of the insulating layer 3, forming a metal film, and then removing the mask.

これらの絶縁層3の厚みは、使用する材料の特性に応じて、要求される仕様に対応する機械的強度や電気的特性等の条件を満たすように適宣設定される。   The thicknesses of these insulating layers 3 are appropriately set so as to satisfy the conditions such as mechanical strength and electrical characteristics corresponding to the required specifications in accordance with the characteristics of the materials used.

なお、本発明は上記の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行なうことは何ら差し支えない。例えば、一般信号線1および差動信号線2は、図1および図2に示したマイクロストリップ線路構造およびストリップ線路構造の他にも、一般信号線や差動信号線が形成された絶縁層の同一面上に、これらと間隔を設けて(これらと絶縁されて)これらを挟むように電源配線層もしくは接地配線層を形成したコプレーナ線路構造としてもよい。   Note that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention. For example, the general signal line 1 and the differential signal line 2 are formed of an insulating layer in which a general signal line and a differential signal line are formed in addition to the microstrip line structure and the strip line structure shown in FIGS. A coplanar line structure may be used in which a power supply wiring layer or a ground wiring layer is formed on the same surface with a space therebetween (insulated with them) so as to sandwich them.

(a)は本発明の多層配線基板の実施の形態の一例を示す断面図であり、(b)は要部を上面から透視した要部拡大図である。(A) is sectional drawing which shows an example of embodiment of the multilayer wiring board of this invention, (b) is the principal part enlarged view which saw through the principal part from the upper surface. 本発明の多層配線基板における他の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of other embodiment in the multilayer wiring board of this invention. 本発明の多層配線基板の実施の形態の一例の要部を上面から透視した要部拡大図である。It is the principal part enlarged view which saw through the principal part of an example of embodiment of the multilayer wiring board of this invention from the upper surface. 本発明の多層配線基板の実施の形態の一例の要部を上面から透視した要部拡大図である。It is the principal part enlarged view which saw through the principal part of an example of embodiment of the multilayer wiring board of this invention from the upper surface. 従来の多層配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the conventional multilayer wiring board.

符号の説明Explanation of symbols

1・・・・・・一般信号線
2・・・・・・差動信号線
2a,2b・・信号線路
3・・・・・・絶縁層
4・・・・・・接地導体層
5・・・・・・開口部
6・・・・・・多層配線基板
7・・・・・・表面配線
1 .... General signal line 2 .... Differential signal line 2a, 2b ... Signal line 3 .... Insulation layer 4 .... Ground conductor layer 5 ....・ ・ ・ ・ Opening 6 ・ ・ ・ ・ ・ ・ Multilayer wiring board 7 ・ ・ ・ ・ ・ ・ Surface wiring

Claims (19)

一般信号線と、
互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、
前記一般信号線および前記差動信号線に間隔をあけて配置され、前記差動信号線と電磁結合する部位に非形成部を有する基準電位層と、
を具備することを特徴とする配線構造。
A general signal line;
A differential signal line composed of a pair of signal wirings each transmitting differential signals whose waveforms are inverted from each other;
A reference potential layer that is disposed with a space between the general signal line and the differential signal line and has a non-forming portion at a portion that is electromagnetically coupled to the differential signal line;
A wiring structure comprising:
前記基準電位層を平面視して、前記非形成部が前記差動信号線と重なることを特徴とする請求項1記載の配線構造。 The wiring structure according to claim 1, wherein the non-forming portion overlaps with the differential signal line in plan view of the reference potential layer. 前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする請求項1または請求項2記載の配線構造。 The wiring structure according to claim 1, wherein the general signal line and the differential signal line are formed on the same surface. 前記非形成部は、複数のものが間隔をあけて配置されたものであることを特徴とする請求項1乃至請求項3のいずれかに記載の配線構造。 The wiring structure according to any one of claims 1 to 3, wherein a plurality of the non-forming portions are arranged at intervals. 前記複数の非形成部の各々は、前記差動信号線の延在方向に沿った長さが前記差動信号線で伝送される信号の波長の1/4以下であることを特徴とする請求項4記載の配線構造。 Each of the plurality of non-formed portions has a length along the extending direction of the differential signal line that is ¼ or less of a wavelength of a signal transmitted through the differential signal line. Item 5. The wiring structure according to Item 4. 前記一般信号線および前記差動信号線に対して前記基準電位層と反対側に第二の基準電位層をさらに有することを特徴とする請求項1乃至請求項5のいずれかに記載の配線構造。 6. The wiring structure according to claim 1, further comprising a second reference potential layer on a side opposite to the reference potential layer with respect to the general signal line and the differential signal line. . 一般信号線と、
互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、
前記一般信号線および前記差動信号線に間隔をあけて配置された基準電位層とを具備しており、
前記基準電位層を平面視したときに、前記差動信号線の面積に対する前記基準電位層の前記差動信号線と電磁結合する部位の面積の比率が、前記一般信号線の面積に対する前記基準電位層の前記一般信号線と電磁結合する部位の面積の比率よりも小さいことを特徴とする配線構造。
A general signal line;
A differential signal line composed of a pair of signal wirings each transmitting differential signals whose waveforms are inverted from each other;
A reference potential layer disposed at a distance from the general signal line and the differential signal line;
When the reference potential layer is viewed in plan, the ratio of the area of the portion of the reference potential layer that is electromagnetically coupled to the differential signal line to the area of the differential signal line is the reference potential relative to the area of the general signal line. A wiring structure characterized by being smaller than the ratio of the area of the portion of the layer that is electromagnetically coupled to the general signal line.
前記基準電位層の前記差動信号線と電磁結合する部位の面積が、前記基準電位層と前記差動信号線との重なり面積であり、前記基準電位層の前記一般信号線と電磁結合する部位の面積が、前記基準電位層と前記一般信号線との重なり面積であることを特徴とする請求項7記載の配線構造。 The area of the reference potential layer that is electromagnetically coupled to the differential signal line is an overlapping area of the reference potential layer and the differential signal line, and the area that is electromagnetically coupled to the general signal line of the reference potential layer The wiring structure according to claim 7, wherein the area of the reference potential layer is an overlapping area of the reference potential layer and the general signal line. 前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする請求項7または請求項8記載の配線構造。 9. The wiring structure according to claim 7, wherein the general signal line and the differential signal line are formed on the same surface. 一般信号線と、
互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、
前記一般信号線および前記差動信号線に絶縁層を介して配置され、前記差動信号線と電磁結合する部位に非形成部を有する基準電位層と、
を具備することを特徴とする多層配線基板。
A general signal line;
A differential signal line composed of a pair of signal wirings each transmitting differential signals whose waveforms are inverted from each other;
A reference potential layer disposed on the general signal line and the differential signal line via an insulating layer, and having a non-forming portion at a portion electromagnetically coupled to the differential signal line;
A multilayer wiring board comprising:
前記基準電位層を平面視して、前記非形成部が前記差動信号線と重なることを特徴とする請求項10記載の多層配線基板。 The multilayer wiring board according to claim 10, wherein the non-formation portion overlaps the differential signal line in plan view of the reference potential layer. 前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする請求項10または請求項11記載の多層配線基板。 12. The multilayer wiring board according to claim 10, wherein the general signal line and the differential signal line are formed on the same surface. 前記非形成部は、複数のものが間隔をあけて配置されたものであることを特徴とする請求項10乃至請求項12のいずれかに記載の多層配線基板。 The multilayer wiring board according to any one of claims 10 to 12, wherein a plurality of the non-forming portions are arranged at intervals. 前記複数の非形成部の各々は、前記差動信号線の延在方向に沿った長さが前記差動信号線で伝送される信号の波長の1/4以下であることを特徴とする請求項13記載の多層配線基板。 Each of the plurality of non-formed portions has a length along the extending direction of the differential signal line that is ¼ or less of a wavelength of a signal transmitted through the differential signal line. Item 14. A multilayer wiring board according to Item 13. 前記一般信号線および前記差動信号線に対して前記基準電位層と反対側に絶縁層を介して第二の基準電位層をさらに有することを特徴とする請求項10乃至請求項14のいずれかに記載の多層配線基板。 15. The semiconductor device according to claim 10, further comprising a second reference potential layer via an insulating layer on an opposite side of the reference potential layer with respect to the general signal line and the differential signal line. A multilayer wiring board according to 1. 一般信号線と、
互いに波形が反転した差動信号をそれぞれ伝送する一対の信号配線から成る差動信号線と、
前記一般信号線および前記差動信号線に絶縁層を介して配置された基準電位層とを具備しており、
前記基準電位層を平面視したときに、前記差動信号線の面積に対する前記基準電位層の前記差動信号線と電磁結合する部位の面積の比率が、前記一般信号線の面積に対する前記基準電位層の前記一般信号線と電磁結合する部位の面積の比率よりも小さいことを特徴とする多層配線基板。
A general signal line;
A differential signal line composed of a pair of signal wirings each transmitting differential signals whose waveforms are inverted from each other;
A reference potential layer disposed through an insulating layer on the general signal line and the differential signal line,
When the reference potential layer is viewed in plan, the ratio of the area of the portion of the reference potential layer that is electromagnetically coupled to the differential signal line to the area of the differential signal line is the reference potential relative to the area of the general signal line. A multilayer wiring board characterized in that it is smaller than the ratio of the area of the portion of the layer that is electromagnetically coupled to the general signal line.
前記基準電位層の前記差動信号線と電磁結合する部位の面積が、前記基準電位層と前記差動信号線との重なり面積であり、前記基準電位層の前記一般信号線と電磁結合する部位の面積が、前記基準電位層と前記一般信号線との重なり面積であることを特徴とする請求項16記載の多層配線基板。 The area of the reference potential layer that is electromagnetically coupled to the differential signal line is an overlapping area of the reference potential layer and the differential signal line, and the area that is electromagnetically coupled to the general signal line of the reference potential layer 17. The multilayer wiring board according to claim 16, wherein the area is an overlapping area of the reference potential layer and the general signal line. 前記一般信号線および前記差動信号線は同一面に形成されていることを特徴とする請求項16または請求項17記載の多層配線基板。 18. The multilayer wiring board according to claim 16, wherein the general signal line and the differential signal line are formed on the same surface. 請求項10乃至請求項18のいずれかに記載の多層配線基板と、前記一般信号線および前記差動信号線に電気的に接続された電子部品とを具備することを特徴とする電子装置。 19. An electronic device comprising: the multilayer wiring board according to claim 10; and an electronic component electrically connected to the general signal line and the differential signal line.
JP2007076797A 2006-03-24 2007-03-23 Wiring structure, multilayer wiring board and electronic device Pending JP2007288180A (en)

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JP2010103537A (en) * 2008-10-21 2010-05-06 Ever Techno Co Ltd Flexible printed circuit board for large-capacity signal transmission medium
JP2012195390A (en) * 2011-03-16 2012-10-11 Canon Inc Stack type circuit board and electronic apparatus mounting the same
US8331104B2 (en) 2010-01-29 2012-12-11 Kabushiki Kaisha Toshiba Electronic device and circuit board
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US8633395B2 (en) 2008-06-06 2014-01-21 National University Corporation Tohoku University Multilayer wiring board
CN105517327A (en) * 2015-12-18 2016-04-20 山东海量信息技术研究院 Method for realizing via impedance matching through blind buried hole process
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* Cited by examiner, † Cited by third party
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JP2008109094A (en) * 2006-09-29 2008-05-08 Sanyo Electric Co Ltd Device mounting substrate and semiconductor module
US8633395B2 (en) 2008-06-06 2014-01-21 National University Corporation Tohoku University Multilayer wiring board
JP2010103537A (en) * 2008-10-21 2010-05-06 Ever Techno Co Ltd Flexible printed circuit board for large-capacity signal transmission medium
US8331104B2 (en) 2010-01-29 2012-12-11 Kabushiki Kaisha Toshiba Electronic device and circuit board
JP2012195390A (en) * 2011-03-16 2012-10-11 Canon Inc Stack type circuit board and electronic apparatus mounting the same
US9232653B2 (en) 2011-12-28 2016-01-05 Panasonic Intellectual Property Management Co., Ltd. Multilayer wiring board
WO2013099286A1 (en) * 2011-12-28 2013-07-04 パナソニック株式会社 Multilayer wiring board
JP2016100600A (en) * 2014-11-26 2016-05-30 インテル コーポレイション Electrical interconnect for electronic packages
JP2016134430A (en) * 2015-01-16 2016-07-25 日立金属株式会社 Relay
JP2016207834A (en) * 2015-04-22 2016-12-08 京セラ株式会社 Printed-circuit board
CN105517327A (en) * 2015-12-18 2016-04-20 山东海量信息技术研究院 Method for realizing via impedance matching through blind buried hole process
CN116321696A (en) * 2023-05-17 2023-06-23 深圳国人无线通信有限公司 PCB (printed circuit board)
CN116321696B (en) * 2023-05-17 2023-08-15 深圳国人无线通信有限公司 PCB (printed circuit board)

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