JP2007109948A - Light-emitting device and manufacturing method thereof - Google Patents
Light-emitting device and manufacturing method thereof Download PDFInfo
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- JP2007109948A JP2007109948A JP2005300315A JP2005300315A JP2007109948A JP 2007109948 A JP2007109948 A JP 2007109948A JP 2005300315 A JP2005300315 A JP 2005300315A JP 2005300315 A JP2005300315 A JP 2005300315A JP 2007109948 A JP2007109948 A JP 2007109948A
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- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000007789 sealing Methods 0.000 claims abstract description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 abstract description 3
- 238000001029 thermal curing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 13
- 238000000605 extraction Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Led Device Packages (AREA)
Abstract
Description
本発明は、発光素子から発せられる光を受けて励起されることにより波長変換光を発する蛍光体層を備えた発光装置及びその製造方法に関する。 The present invention relates to a light-emitting device including a phosphor layer that emits wavelength-converted light when excited by receiving light emitted from a light-emitting element, and a method for manufacturing the same.
周知のように、単一の発光ダイオード（Light Emitting Diode：ＬＥＤ）素子から発せられる光と、この光で蛍光体が励起されて発する波長変換光との混合により白色光を得ることができる発光装置が実用化されている。 As is well known, a light emitting device capable of obtaining white light by mixing light emitted from a single light emitting diode (LED) element and wavelength converted light emitted by exciting a phosphor with this light. Has been put to practical use.
従来、この種の発光装置には、素子搭載基板にバンプを介して実装されたＬＥＤ素子と、このＬＥＤ素子を封止する蛍光体含有の封止部材とを備えたものが提案されている（例えば特許文献１参照）。 Conventionally, a light emitting device of this type has been proposed that includes an LED element mounted on an element mounting substrate via a bump and a phosphor-containing sealing member that seals the LED element ( For example, see Patent Document 1).
このような発光装置においては、ＬＥＤ素子として青色光を発する青色ＬＥＤ素子であり、また蛍光体として青色光で励起されて黄色光を発する蛍光体であると、ＬＥＤ素子から発せられる青色の励起光と蛍光体から発せられる黄色の波長変換光との混合により白色光が得られる。
しかし、特許文献１によると、ＬＥＤ素子が蛍光体含有の封止部材によって封止されているため、ＬＥＤ素子から発せられる光が蛍光体含有の封止部材内に入射した後に蛍光体で反射され易く、その一部の光がＬＥＤ素子に戻って吸収されていた。このため、光吸収損失が生じ、光取出効率が低下するという問題があった。 However, according to Patent Document 1, since the LED element is sealed by the phosphor-containing sealing member, the light emitted from the LED element is reflected by the phosphor after entering the phosphor-containing sealing member. It was easy and some of the light returned to the LED element and was absorbed. For this reason, there has been a problem that light absorption loss occurs and the light extraction efficiency decreases.
また、特許文献１に示す発光装置においては、素子封止時にＬＥＤ素子と素子搭載基板との間に形成された空隙に封止部材が入り込まず、気泡が残存する虞がある。このため、素子封止後（封止部材の熱硬化時）に気泡の熱膨張によってバンプが外れ、品質上の信頼性が低下するという問題もあった。 Moreover, in the light emitting device shown in Patent Document 1, the sealing member does not enter the gap formed between the LED element and the element mounting substrate when the element is sealed, and there is a possibility that bubbles remain. For this reason, after element sealing (at the time of thermosetting of a sealing member), a bump removed by thermal expansion of a bubble, and there also existed a problem that reliability in quality fell.
従って、本発明の目的は、光取出効率及び品質上の信頼性を高めることができる発光装置及びその製造方法を提供することにある。 Accordingly, it is an object of the present invention to provide a light emitting device and a method for manufacturing the same that can improve light extraction efficiency and reliability in quality.
（１）本発明は、上記目的を達成するために、素子搭載基板と、前記素子搭載基板にアンダーフィルを介して搭載された発光素子と、前記発光素子を封止する光透過性部材からなる封止部材と、前記封止部材を覆う蛍光体層とを備えたことを特徴とする発光装置を提供する。 (1) In order to achieve the above object, the present invention comprises an element mounting substrate, a light emitting element mounted on the element mounting substrate through an underfill, and a light transmissive member that seals the light emitting element. There is provided a light emitting device comprising a sealing member and a phosphor layer covering the sealing member.
（２）本発明は、上記目的を達成するために、素子搭載基板に発光素子を搭載する工程と、前記発光素子と前記素子搭載基板との間にアンダーフィルを注入する工程と、前記発光素子を封止部材で封止する工程と、前記封止部材を覆う蛍光体層を形成する工程とを含むことを特徴とする発光装置の製造方法を提供する。 (2) To achieve the above object, the present invention includes a step of mounting a light emitting element on an element mounting substrate, a step of injecting an underfill between the light emitting element and the element mounting substrate, and the light emitting element. The manufacturing method of the light-emitting device characterized by including the process of sealing with a sealing member, and the process of forming the fluorescent substance layer which covers the said sealing member is provided.
本発明によると、光取出効率及び品質上の信頼性を高めることができる。 According to the present invention, light extraction efficiency and quality reliability can be increased.
[実施の形態]
図１は、本発明の第１の実施の形態に係る発光装置を説明するために示す図である。
[Embodiment]
FIG. 1 is a diagram for explaining a light emitting device according to a first embodiment of the present invention.
〔発光装置１の全体構成〕
図１において、発光装置１は、ベースとしての素子搭載基板６と、この素子搭載基板６に搭載されたＬＥＤ素子３１と、このＬＥＤ素子３１を封止する封止部材８と、この封止部材８を覆う蛍光体層９とから大略構成されている。
[Overall configuration of light-emitting device 1]
In FIG. 1, a light emitting device 1 includes an element mounting substrate 6 as a base, an LED element 31 mounted on the element mounting substrate 6, a sealing member 8 for sealing the LED element 31, and a sealing member. 8 and a phosphor layer 9 covering 8.
（素子搭載基板６の構成）
素子搭載基板６は、Ａｌ2Ｏ3のセラミックス材料からなる薄板部材によって形成されている。素子搭載基板６の材料としては、Ａｌ2Ｏ3の他に、シリコン（Ｓｉ）や窒化アルミニウム（ＡｌＮ）あるいは樹脂が用いられる。素子搭載基板６の光取出側面（表面）及び側面・裏面には、ＬＥＤ素子３の両電極にそれぞれ金（Ａｕ）からなるバンプ１２，１３を介して接続する電源供給用の配線パターン１４，１５が設けられている。配線パターン１４，１５は、例えばタングステン（Ｗ），モリブデン（Ｍｏ），ニッケル（Ｎｉ），アルミニウム（Ａｌ），白金（Ｐｔ），チタン（Ｔｉ），Ａｕ，銀（Ａｇ），銅（Ｃｕ）等の単層又は積層あるいは半田材料によって形成されている。
(Configuration of element mounting substrate 6)
The element mounting substrate 6 is formed of a thin plate member made of an Al 2 O 3 ceramic material. As a material for the element mounting substrate 6, in addition to Al 2 O 3 , silicon (Si), aluminum nitride (AlN), or resin is used. On the light extraction side surface (front surface) and the side surface / back surface of the element mounting substrate 6, wiring patterns 14 and 15 for power supply are connected to both electrodes of the LED element 3 via bumps 12 and 13 made of gold (Au), respectively. Is provided. The wiring patterns 14 and 15 are, for example, tungsten (W), molybdenum (Mo), nickel (Ni), aluminum (Al), platinum (Pt), titanium (Ti), Au, silver (Ag), copper (Cu), etc. These are formed of a single layer or a laminated layer or a solder material.
（ＬＥＤ素子３１の構成）
ＬＥＤ素子３１は、ｐ側電極及びｎ側電極を有するフリップチップ型の青色ＬＥＤ素子からなり、素子搭載基板６に搭載され、かつ封止部材８によって封止されている。ＬＥＤ素子３１は、サファイア（Ａｌ2Ｏ3）基板上にＡｌＮからなるバッファ層（図示せず）及びｎ型半導体（ｎ−ＧａＮ）層・発光層・ｐ型半導体（ｐ−ＧａＮ）層を順次結晶成長させることにより形成されている。ＬＥＤ素子３１の平面縦横寸法は、例えば縦寸法及び横寸法をそれぞれ約１ｍｍとする平面サイズに設定されている。ＬＥＤ素子３１と素子搭載基板６との間に形成される空隙には、ＡｌＮ等の熱伝導（放熱）性部材からなるアンダーフィル３２が配設されている。アンダーフィル３２の材料としては、ＡｌＮの他に、二酸化チタン（ＴｉＯ2），硫酸バリウム（ＢａＳＯ4），アルミナ（Ａｌ2Ｏ3）等の反射性材料（白色フィラー）と熱伝導性材料との混合材料、透明材料あるいは反射性材料が用いられる。
(Configuration of LED element 31)
The LED element 31 is composed of a flip-chip blue LED element having a p-side electrode and an n-side electrode, and is mounted on the element mounting substrate 6 and sealed by a sealing member 8. The LED element 31 has a buffer layer (not shown) made of AlN, an n-type semiconductor (n-GaN) layer, a light emitting layer, and a p-type semiconductor (p-GaN) layer sequentially on a sapphire (Al 2 O 3 ) substrate. It is formed by crystal growth. The planar vertical and horizontal dimensions of the LED element 31 are set to a planar size in which the vertical dimension and the horizontal dimension are about 1 mm, respectively. In the gap formed between the LED element 31 and the element mounting substrate 6, an underfill 32 made of a heat conductive (heat radiating) member such as AlN is disposed. As the material of the underfill 32, in addition to AlN, a reflective material (white filler) such as titanium dioxide (TiO 2 ), barium sulfate (BaSO 4 ), alumina (Al 2 O 3 ), and a heat conductive material are used. A mixed material, a transparent material or a reflective material is used.
なお、本実施の形態では、素子搭載基板６にＬＥＤ素子３１が搭載されている場合について説明したが、本発明はこれに限定されず、サブマウントを介して素子搭載基板にＬＥＤ素子を搭載してもよい。 In the present embodiment, the case where the LED element 31 is mounted on the element mounting board 6 has been described. However, the present invention is not limited to this, and the LED element is mounted on the element mounting board via a submount. May be.
（封止部材８の構成）
封止部材８は、シリコーン等の光透過性樹脂材料からなり、前述したようにＬＥＤ素子３１を封止するように構成されている。
(Configuration of sealing member 8)
The sealing member 8 is made of a light-transmitting resin material such as silicone, and is configured to seal the LED element 31 as described above.
（蛍光体層９の構成）
蛍光体層９は、ＬＥＤ素子３１からの光（青色光）を受けて励起されることにより、波長変換光（黄色光）を発するＹＡＧ（ＹｔｔｒｉｕｍＡｌｕｍｉｎｕｍ Ｇａｒｎｅｔ）等の蛍光体を含有するシリコーン等の光透過性樹脂材料によって形成されている。そして、前述したように封止部材８を覆うように構成されている。蛍光体層９の厚さは均一な寸法に設定されている。これにより、ＬＥＤ素子３１から発せられる各光の行路長を蛍光体層９内において一定の寸法に近づけ、蛍光体層９から出射される光の色むらの発生が抑制される。
(Configuration of phosphor layer 9)
The phosphor layer 9 is light such as silicone containing a phosphor such as YAG (Yttrium Aluminum Garnet) that emits wavelength-converted light (yellow light) when excited by receiving light (blue light) from the LED element 31. It is made of a permeable resin material. And as mentioned above, it is comprised so that the sealing member 8 may be covered. The thickness of the phosphor layer 9 is set to a uniform dimension. Thereby, the path length of each light emitted from the LED element 31 is brought close to a certain size in the phosphor layer 9, and the occurrence of uneven color of the light emitted from the phosphor layer 9 is suppressed.
〔発光装置１の動作〕
ＬＥＤ素子３１に電源から配線パターン１４，１５を介して電圧が印加されると、ＬＥＤ素子３１の発光層において青色光を発し、この青色光がＬＥＤ素子３１の光取出面から封止部材８に出射される。この場合、ＬＥＤ素子３において発生する熱がアンダーフィル３２を介して素子搭載基板６に放散される。
[Operation of Light Emitting Device 1]
When a voltage is applied to the LED element 31 from the power supply via the wiring patterns 14 and 15, blue light is emitted from the light emitting layer of the LED element 31, and this blue light is emitted from the light extraction surface of the LED element 31 to the sealing member 8. Emitted. In this case, heat generated in the LED element 3 is dissipated to the element mounting substrate 6 through the underfill 32.
次に、ＬＥＤ素子３１からの出射光が封止部材８を透過して蛍光体層９内に入射すると、蛍光体層９では入射光（青色光）を受けて励起されることにより黄色の波長変換光を発する。このため、ＬＥＤ素子３１から発せられる青色の励起光と蛍光体層９から発せられる黄色の波長変換光とが混合して白色光となる。そして、白色光が蛍光体層９を透過し、その光出射面から外部に出射される。 Next, when the emitted light from the LED element 31 passes through the sealing member 8 and enters the phosphor layer 9, the phosphor layer 9 receives the incident light (blue light) and is excited to cause a yellow wavelength. Emits converted light. For this reason, the blue excitation light emitted from the LED element 31 and the yellow wavelength converted light emitted from the phosphor layer 9 are mixed to form white light. And white light permeate | transmits the fluorescent substance layer 9, and is radiate | emitted outside from the light-projection surface.
次に、本実施の形態に係る発光装置の製造方法につき、図２（ａ）〜（ｄ）を用いて説明する。 Next, a method for manufacturing the light emitting device according to the present embodiment will be described with reference to FIGS.
図２（ａ）〜（ｄ）は、本発明の実施の形態に係る発光装置の製造方法を説明するために示す図である。図２（ａ）はＬＥＤ素子の搭載工程を、図２（ｂ）はアンダーフィルの注入工程を、図２（ｃ）はＬＥＤ素子の封止工程を、図２（ｄ）は蛍光体層の形成工程をそれぞれ説明するために示す断面図である。 2A to 2D are views for explaining a method for manufacturing a light emitting device according to an embodiment of the present invention. 2A shows the LED element mounting process, FIG. 2B shows the underfill injection process, FIG. 2C shows the LED element sealing process, and FIG. 2D shows the phosphor layer. It is sectional drawing shown in order to demonstrate each formation process.
本実施の形態に示す発光装置の製造方法は、「ＬＥＤ素子の搭載」及び「アンダーフィルの注入」・「ＬＥＤ素子の封止」・「蛍光体層の形成」の各工程が順次実施されるため、これら各工程を順次説明する。 In the method for manufacturing the light emitting device shown in the present embodiment, the steps of “mounting the LED element” and “injecting underfill”, “sealing the LED element”, and “forming the phosphor layer” are sequentially performed. Therefore, each of these steps will be described sequentially.
「ＬＥＤ素子の搭載」
先ず、アンダーフィル塗布（注入）領域であって、素子搭載基板１０の配線パターン１４，１５にそれぞれＡｕ等のバンプ１２，１３を塗布する。次に、素子搭載基板６上にバンプ１２，１３を介して青色のＬＥＤ素子３１を搭載する。この場合、ＬＥＤ素子３１が素子搭載基板６上に搭載されると、図２（ａ）に示すように、ＬＥＤ素子３１のｐ側電極及びｎ側電極がそれぞれバンプ１２，１３を介して配線パターン１４，１５に接続される。
"Installation of LED elements"
First, in the underfill application (injection) region, bumps 12 and 13 such as Au are applied to the wiring patterns 14 and 15 of the element mounting substrate 10, respectively. Next, the blue LED element 31 is mounted on the element mounting substrate 6 via the bumps 12 and 13. In this case, when the LED element 31 is mounted on the element mounting substrate 6, as shown in FIG. 2A, the p-side electrode and the n-side electrode of the LED element 31 are connected to the wiring pattern via the bumps 12 and 13, respectively. 14 and 15.
「アンダーフィルの注入」
窒化アルミニウム（ＡｌＮ）等の熱伝導性部材からなるアンダーフィル３２をＬＥＤ素子３１の搭載側面（基板側面）と素子搭載基板６の素子搭載面との間に注入する。この場合、ＬＥＤ素子３１と素子搭載基板６との間にアンダーフィル３２が注入されると、図２（ｂ）に示すようにＬＥＤ素子３１と素子搭載基板６との間に形成される空隙にアンダーフィル３２が充填される。なお、アンダーフィル３２を素子搭載基板６に塗布する場合、「ＬＥＤ素子の搭載」工程前に実施することも可能である。
"Injecting underfill"
An underfill 32 made of a heat conductive member such as aluminum nitride (AlN) is injected between the mounting side surface (substrate side surface) of the LED element 31 and the element mounting surface of the element mounting substrate 6. In this case, when the underfill 32 is injected between the LED element 31 and the element mounting substrate 6, the gap formed between the LED element 31 and the element mounting substrate 6 is formed as shown in FIG. Underfill 32 is filled. In addition, when the underfill 32 is applied to the element mounting substrate 6, it can be performed before the “LED element mounting” step.
「ＬＥＤ素子の封止」
スクリーン印刷技術を用い、封止部材８となるシリコーン等の光透過性樹脂材料をＬＥＤ素子３１に塗布する。この場合、光透過性樹脂材料がＬＥＤ素子３１に塗布されると、図２（ｃ）に示すように封止部材８によってＬＥＤ素子３１がアンダーフィル３２と共に素子搭載基板６上で封止される。
"LED element sealing"
A light-transmitting resin material such as silicone that becomes the sealing member 8 is applied to the LED element 31 using a screen printing technique. In this case, when the light-transmitting resin material is applied to the LED element 31, the LED element 31 is sealed on the element mounting substrate 6 together with the underfill 32 by the sealing member 8 as shown in FIG. .
「蛍光体層の形成」
スクリーン印刷技術を用い、ＹＡＧ等の蛍光体を含有するシリコーン等の光透過性樹脂材料を封止部材８に塗布する。この場合、光透過性樹脂材料が封止部材８に塗布されると、図２（ｄ）に示すように蛍光体層９によって封止部材８が素子搭載基板６上で被覆される。
このようにして、発光装置１を製造することができる。
"Formation of phosphor layer"
Using a screen printing technique, a light transmissive resin material such as silicone containing a phosphor such as YAG is applied to the sealing member 8. In this case, when the light transmissive resin material is applied to the sealing member 8, the sealing member 8 is covered on the element mounting substrate 6 by the phosphor layer 9 as shown in FIG.
In this way, the light emitting device 1 can be manufactured.
[実施の形態の効果]
以上説明した実施の形態によれば、次に示す効果が得られる。
[Effect of the embodiment]
According to the embodiment described above, the following effects can be obtained.
（１）ＬＥＤ素子３１から発せられる光が封止部材８を介して蛍光体層９に入射するため、従来のようにはＬＥＤ素子３１から出射される光がＬＥＤ素子側に戻ることがない。このため、光吸収損失の発生を抑制することができ、光取出効率を高めることができる。 (1) Since the light emitted from the LED element 31 enters the phosphor layer 9 through the sealing member 8, the light emitted from the LED element 31 does not return to the LED element side as in the prior art. For this reason, generation | occurrence | production of a light absorption loss can be suppressed and light extraction efficiency can be improved.
（２）ＬＥＤ素子３１と素子搭載基板６との間にはアンダーフィル３２が配設されているため、ＬＥＤ素子３１と素子搭載基板６との間に気泡が従来のようには残存することがない。このため、封止部材８の熱硬化時にバンプ１２，１３が外れることがなく、品質上の信頼性を高めることができる。 (2) Since the underfill 32 is disposed between the LED element 31 and the element mounting substrate 6, bubbles may remain between the LED element 31 and the element mounting substrate 6 as in the conventional case. Absent. For this reason, the bumps 12 and 13 do not come off when the sealing member 8 is thermally cured, and the reliability in quality can be improved.
以上、本発明の発光装置を上記の実施の形態に基づいて説明したが、本発明は上記の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能であり、例えば次に示すような変形も可能である。 As mentioned above, although the light-emitting device of this invention was demonstrated based on said embodiment, this invention is not limited to said embodiment, It implements in a various aspect in the range which does not deviate from the summary. For example, the following modifications are possible.
（１）本実施の形態では、蛍光体層９の厚さが均一な寸法に設定されている場合について説明したが、本発明はこれに限定されず、その光取出面（光出射面）を光取出側に膨出する光学形状面で形成してもよい。 (1) In the present embodiment, the case where the thickness of the phosphor layer 9 is set to a uniform dimension has been described. However, the present invention is not limited to this, and the light extraction surface (light emission surface) is the same. You may form with the optical shape surface which bulges to the light extraction side.
（２）本実施の形態では、蛍光体層９が蛍光体含有のシリコーン等の光透過性樹脂である場合について説明したが、本発明はこれに限定されず、蛍光体含有の無機ガラスからなるもの、あるいは蛍光体含有の有機・無機ハイブリッド材料からなるものでもよい。 (2) Although the case where the phosphor layer 9 is a light-transmitting resin such as phosphor-containing silicone has been described in the present embodiment, the present invention is not limited to this and is made of phosphor-containing inorganic glass. Or an organic / inorganic hybrid material containing a phosphor.
（３）本実施の形態では、ＬＥＤ素子３１から発せられる青色光を受けて励起されることにより黄色の波長変換光を発する蛍光体層９である場合について説明したが、本発明はこれに限定されず、ＬＥＤ素子から発せられる紫色光（波長３７０〜３９０ｎｍ）を受けて励起されることにより白色の波長変換光を発する蛍光体層であってもよい。 (3) In the present embodiment, the case where the phosphor layer 9 emits yellow wavelength-converted light by receiving and exciting the blue light emitted from the LED element 31 has been described. However, the present invention is limited to this. Alternatively, it may be a phosphor layer that emits white wavelength-converted light when excited by receiving violet light (wavelength of 370 to 390 nm) emitted from the LED element.
１…発光装置、６…素子搭載基板、８…封止部材、９…蛍光体層、１２，１３…バンプ、１４，１５…配線パターン、３１…ＬＥＤ素子，３２…アンダーフィル DESCRIPTION OF SYMBOLS 1 ... Light-emitting device, 6 ... Element mounting substrate, 8 ... Sealing member, 9 ... Phosphor layer, 12, 13 ... Bump, 14, 15 ... Wiring pattern, 31 ... LED element, 32 ... Underfill
Claims (7)
前記素子搭載基板にアンダーフィルを介して搭載された発光素子と、
前記発光素子を封止する光透過性部材からなる封止部材と、
前記封止部材を覆う蛍光体層とを備えたことを特徴とする発光装置。 An element mounting substrate;
A light emitting element mounted on the element mounting substrate via an underfill;
A sealing member made of a light transmissive member for sealing the light emitting element;
And a phosphor layer that covers the sealing member.
前記発光素子と前記素子搭載基板との間にアンダーフィルを注入する工程と、
前記発光素子を封止部材で封止する工程と、
前記封止部材を覆う蛍光体層を形成する工程とを含むことを特徴とする発光装置の製造方法。 Mounting the light emitting element on the element mounting substrate;
Injecting an underfill between the light emitting element and the element mounting substrate;
Sealing the light emitting element with a sealing member;
And a step of forming a phosphor layer covering the sealing member.
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