JP2006196920A5 - - Google Patents

Description

Sodium chlorite (NaClO ₂ ) 0 to 100 g / L
Sodium hydroxide (NaOH) 5-60g / L
Trisodium phosphate (Na ₃ PO ₄ ) 0-200 g / L
Processing conditions:
Bath temperature of about 50-80 ° C
Processing time: about 1-20 seconds Current density: about 0.2-10 A / dm ²
In the semiconductor device of the present invention, as described above, the hydroxide-containing copper oxide film of the conductor base material having copper or a copper alloy on the outermost surface and the sealing resin covering the surface of the film are formed by hydrogen bonding force. By bonding, a strong adhesion can be obtained, and very excellent reliability can be imparted to the semiconductor device. Expression of hydrogen bonding according to the present invention is a cross-sectional view hydroxide-containing copper oxide skin layer and the epoxy resin 9 of the conductor substrate 1 of the surface is schematically shown a mechanism for joining the semiconductor device of the present invention FIG. 4 will be easy to understand. Hydroxides containing copper oxide skin film can epoxy resin 9 expresses a strong adhesion by making a hydrogen bond with a hydroxyl group (-OH) to produce cured. As far as the present inventors know, it has not been proposed in the prior art to enhance the adhesive force by coexisting hydroxide with copper oxide.

In contrast, in the case of the conventional semiconductor device, as shown schematically in FIG. 5, only the copper oxide skin layer and the epoxy resin 9 of the conductor substrate (copper or copper alloy) 1 surface is weakly bound Therefore, only weak adhesive force can be obtained, and problems such as generation of cracks and peeling of the sealing resin cannot be excluded.

On the other hand, when an untreated copper alloy material is oxidized according to the present invention, a hydroxide-containing copper oxide film that does not form a segregation layer by heating can be formed. First, according to the present invention, the conductor base material 1 made of a copper alloy material containing an element such as Sn or Ni as an additive is subjected to an oxidation treatment (use of an oxidation strengthening agent-added blackening treatment solution or a combination of a blackening treatment solution and an anodizing treatment). ), The cuprous oxide (Cu ₂ O) layer 21, the cupric oxide (CuO) layer 22, and the rough surface are formed in this order from the conductor substrate 1 side, as shown in FIG. cupric (Cu (OH) ₂₎ layer 23 hydroxyl of having is formed. Next, when heating is performed in such a surface state, as shown in FIG. 13B, the copper (Cu) element of the conductor base material 1 causes non-uniform diffusion due to the unevenness of the surface layer surface, and as a result, Even if the additive element is left behind, the segregation layer is not formed as shown in FIG. Therefore, in the case of the hydroxide of which is formed by the method of the present invention cupric (Cu (OH) ₂₎ layer 23, due to the peeling of the sealing resin which is caused to the presence of segregated layer does not occur, The heat resistance of the semiconductor device also increases.

1 conductor substrate 2 hydroxide-containing copper oxide layer 3 and silver-plated layer 5 semiconductor device 8 the bonding wires 9 sealing resin 10 semiconductor device 21 cuprous oxide (Cu ₂ O) layer 22 cupric oxide (CuO) layer 23 hydroxide of cupric (Cu (OH) ₂₎ layer

Claims (39)

Plated layer on a portion of the surface of the conductive base material is formed, and the surface of the conductor substrate other than the portion forming the plating layer was formed by from the surface treatment of the conductor substrate water A conductor base material which is partially or wholly covered with a copper oxide film containing an oxide. The conductor base material according to claim 1, which is for mounting a semiconductor element, wherein a mounting portion of the semiconductor element is sealed with at least an insulating resin. The conductor substrate according to claim 1 or 2 , wherein the conductor substrate is substantially made of copper or an alloy thereof. The conductor substrate according to claim 1 or 2 , wherein the conductor substrate is substantially made of a non-copper metal, and the outermost layer of the conductor substrate is made of copper or an alloy thereof. The said surface treatment is a forced oxidation process which consists of immersing the said conductor base material in the blackening process liquid which added the oxidizing agent excellent in the self-reduction power, The any one of Claims 1-4 characterized by the above-mentioned. The conductor base material according to item 1. The said surface treatment is a forced oxidation process which consists of immersing the said conductor base material in a blackening process liquid, and performing an anodizing process, The any one of Claims 1-4 characterized by the above-mentioned. Conductor substrate. The insulating resin is a resin containing a hydroxyl group in its molecule, and a hydrogen bonding force is developed between the hydroxyl group-containing resin and the hydroxide-containing copper oxide film . The conductor base material according to any one of 6 . The conductor base material according to claim 7 , wherein the hydroxyl group-containing resin is an epoxy resin. The conductor substrate according to any one of claims 1 to 8 , wherein the conductor substrate is a lead frame. Coating of the hydroxide-containing copper oxide, except for the wiring drawing portion, according to any one of claims 1 to 9, characterized in that it is coated on at least part of the surface of the conductor substrate Conductor base material. The conductor base material according to claim 10 , wherein the hydroxide-containing copper oxide film is coated on the entire surface of the conductor base material. The said conductor base material is a heat sink, The conductor base material of any one of Claims 1-8 characterized by the above-mentioned. The hydroxide-containing copper oxide film is formed in order from the conductor base side, cuprous oxide (Cu ₂ O) layer, cupric oxide (CuO) layer and cupric hydroxide (Cu (OH)). The conductor base material according to any one of claims 1 to 12 , which is a three-layer structure comprising ₂ ) layers. The thickness of the film of the hydroxide-containing copper oxide, conductive substrate according to any one of claims 1 to 13, characterized in that in the range of 0.02～0.2Myuemu. When processed under high temperature, according to any one of claims 1 to 14, characterized in that it does not form a segregation layer between the conductor substrate and coating of the hydroxide-containing copper oxide Conductor substrate. The conductor base material according to any one of claims 1 to 15 , wherein the hydroxide-containing copper oxide film is made of needle-like crystals having a particle size of 0.5 µm or less. A semiconductor device comprising at least one semiconductor element mounted at a predetermined position of the conductor base material according to any one of claims 1 to 16 , and sealed with an insulating resin. The semiconductor device according to claim 17 , wherein substantially all of the conductor base material is sealed with the insulating resin. The semiconductor device according to claim 17, wherein the semiconductor device is mounted on a mounting board using solder. The semiconductor device according to claim 19 , wherein the solder is lead-free solder. A method for producing the conductor substrate according to claim 1 ,
Forming a plating layer on a portion of the surface of the conductor substrate; and
A method for producing a conductor base material, comprising the steps of surface-treating the conductor base material and partially or entirely forming a copper oxide film containing a hydroxide on the surface of the conductor base material. The method of manufacturing a conductor base material according to claim 21 , wherein the conductor base material is substantially made of copper or an alloy thereof. The method for producing a conductor base material according to claim 21 , wherein the conductor base material is substantially made of a non-copper metal, and the outermost layer of the conductor base material is made of copper or an alloy thereof. The said surface treatment process is performed by immersing the said conductor base material in the blackening process liquid which added the oxidizing agent excellent in the self-reduction power, The any one of Claims 21-23 characterized by the above-mentioned. The manufacturing method of the conductor base material. The method for producing a conductor base material according to claim 24 , wherein the blackening treatment liquid is a mixed liquid of a strong alkali compound and an oxidizing agent. The method for producing a conductor base material according to claim 24 or 25 , wherein the oxidizing agent having excellent self-reducing power is sodium permanganate, sodium dichromate, sodium peroxodisulfate or a mixture thereof. The said surface treatment process is performed by immersing the said conductor base material in a blackening process liquid, and performing an anodizing process, The manufacture of the conductor base material of any one of Claims 21-23 characterized by the above-mentioned. Method. The method for producing a conductor base material according to claim 27 , wherein the blackening treatment liquid is a mixed liquid of a strong alkali compound and an oxidizing agent. The method for producing a conductor base material according to any one of claims 21 to 28 , wherein the surface treatment step is performed at a temperature of 50 to 80C for 1 to 20 seconds. 30. The method of manufacturing a conductor base material according to any one of claims 21 to 29 , wherein a lead frame is used as the conductor base material. The conductor according to any one of claims 21 to 30 , wherein the hydroxide-containing copper oxide film is coated on at least a part of the surface of the conductor base material except for a wiring extraction portion. A method for producing a substrate. The method for producing a conductor base material according to claim 31 , wherein the hydroxide-containing copper oxide film is coated on the entire surface of the conductor base material. The method of manufacturing a conductor base material according to any one of claims 21 to 29 , wherein a heat radiating plate is used as the conductor base material. The hydroxide-containing copper oxide film is formed in order from the conductor base side, cuprous oxide (Cu ₂ O) layer, cupric oxide (CuO) layer and cupric hydroxide (Cu (OH)). ₂ ) The method for producing a conductor base material according to any one of claims 21 to 33 , which is a three-layer structure comprising layers. The method for producing a conductor base material according to any one of claims 21 to 34 , wherein a film thickness of the hydroxide-containing copper oxide film is in a range of 0.02 to 0.2 µm. The segregation layer is not formed between the conductor base material and the hydroxide-containing copper oxide film when treated at a high temperature, according to any one of claims 21 to 35 . A method for producing a conductor substrate. The method for producing a conductor base material according to any one of claims 21 to 36 , wherein the hydroxide-containing copper oxide film is formed from needle-like crystals having a particle size of 0.5 µm or less. . A hydroxide-containing copper oxide film is formed on a conductor substrate by the method according to any one of claims 21 to 37 , and then a semiconductor element is mounted at a predetermined position of the conductor substrate, and the semiconductor A method for manufacturing a semiconductor device, comprising: electrically connecting an element and the conductor base material; and further sealing a mounting portion of the semiconductor element with at least an insulating resin. 39. The method of manufacturing a semiconductor device according to claim 38 , wherein substantially all of the semiconductor device is sealed with the insulating resin.