JP2006179876A - Apparatus and method for plasma processing - Google Patents

Abstract

An object of the present invention is to obtain an etching shape with good perpendicularity in a desired finely processed portion having a depth on the order of several hundred nm to several hundred μm, and can perform plasma processing without stopping etching in the depth direction. A processing apparatus and method are provided.
A projecting portion provided on a part of a surface of a plasma source having a gas flow path and an electrode that can be controlled in potential by supplying power or grounding is provided on a part of a surface facing the object to be processed. A first gas ejection surface having an opening of one gas ejection port is formed, and the convex portion 1 has a size that can be inserted into a finely processed portion of the workpiece.
[Selection] Figure 3

Description

  The present invention relates to a plasma processing apparatus and method using plasma.

  In general, a resist process is used when a patterning process having a depth on the order of several hundred nm to several hundred μm is performed on an object typified by a substrate having a thin film formed on the surface. An example is shown in FIGS. 16A to 16D. 16A to 16D, first, a photosensitive resist 30 is applied to the surface of the workpiece 29 (FIG. 16A). Next, if it develops after exposing using an exposure machine, the resist 30 can be patterned into a desired shape (FIG. 16B). Then, the workpiece 29 is placed in a vacuum vessel, plasma is generated in the vacuum vessel, and the workpiece 29 is etched using the resist 30 as a mask, whereby the surface of the workpiece 29 is patterned into a desired shape. (FIG. 16C). Finally, the processing is completed by removing the resist 30 with oxygen plasma or an organic solvent (FIG. 16D).

  Since the resist process as described above is suitable for accurately forming a fine pattern, it has played an important role in the manufacture of electronic devices such as semiconductors. However, there is a drawback that the process is complicated.

  Therefore, a new processing method that does not use a resist process is being studied. As an example, FIGS. 17 to 21 show the configuration of a plasma processing apparatus equipped with a microplasma source. FIG. 17 shows an exploded view of the microplasma source. The microplasma source includes a ceramic outer plate 31, inner plates 32 and 33, an outer plate 34, and a plate electrode 35, all having a thickness of 1 mm. The outer plates 31 and 34 are provided with an outer gas passage 36 and an outer gas outlet 37, and the inner plates 32 and 33 are provided with an inner gas passage 38 and an inner gas outlet 39. The raw material gas of the gas ejected from the inner gas outlet 39 flows from the inner gas supply port 40 provided in the outer plate 31 through the through hole 41 provided in the inner plate 32 and the plate electrode 35. Guided to path 38.

  The source gas of the gas ejected from the outer gas outlet 37 passes through the inner plate 32, the inner plate 33, and the through hole 43 provided in the plate electrode 35 from the outer gas supply port 42 provided in the outer plate 31. Through the outer gas passage 36. The plate-like electrode 35 to which the high frequency power is applied is inserted between the inner plates 32 and 33 and wired to the power supply part via the lead part 44.

  FIG. 18 is a plan view of the microplasma source as viewed from the gas outlet side. An outer plate 31, inner plates 32 and 33, an outer plate 34, and a plate-like electrode 35 are provided, and an outer gas outlet 37 is provided between the outer plate 31 and the inner plate 32 and between the inner plate 33 and the outer plate 34. In addition, an inner gas outlet 39 is provided between the inner plate 32 and the plate electrode 35 and between the inner plate 33 and the plate electrode 35. The length e in the linear direction of the inner gas outlet 39 is 30 mm, and the length f in the linear direction of the outer gas outlet 37 is 36 mm, which is larger than the length e in the linear direction of the inner gas outlet 39. The length g in the line direction of the plate electrode 35 was 30 mm.

  FIG. 19 shows a cross section of the workpiece 15 and the microplasma source cut along a plane perpendicular to the workpiece 15. The microplasma source includes an outer plate 31 made of ceramic, inner plates 32 and 33, an outer plate 34, and a plate electrode 35. The outer plates 31 and 34 are provided with outer gas jets 37, and the inner plates 32 and 33 are provided. Is provided with an inner gas outlet 39. The plate-like electrode 35 is set to the ground potential, and a counter electrode 46 for applying high-frequency power is placed at a position facing the microplasma source. In addition, the width | variety of the fine line which the inner side gas jet 39 between the inner side board 32 and the plate-like electrode 35 as an opening part of a microplasma source and between the inner side board 33 and the plate-like electrode 35 makes is 0.05 mm. .

In the plasma processing apparatus equipped with the microplasma source having such a configuration, high frequency is supplied to the counter electrode 46 while helium (He) is supplied from the inner gas outlet and sulfur hexafluoride (SF ₆ ) is supplied from the outer gas outlet. By applying electric power, a minute linear portion of the workpiece 15 can be etched. This is due to the difference in ease of discharge between helium and sulfur hexafluoride under atmospheric pressure (helium is much easier to discharge), so that the inner gas outlet has a high concentration of helium. This is because microplasma can be generated only in the vicinity of 39.

  In addition, in a plasma processing apparatus equipped with a microplasma source having such a configuration, regarding linear processing using a plate-like electrode having an acute angle portion, particularly using Si as a workpiece, Japanese Patent Laid-Open No. 2004-2004 Details are described in Japanese Patent No. 111949. Among the atmospheric pressure glow plasmas, characteristics relating to etching are described in Japanese Patent No. 3014111.

Using the above-described plasma processing apparatus, for example, as a gas, Si used as the workpiece 15 is supplied for 120 s under the condition of supplying 1000 sccm of He and 400 sccm of SF ₆ to the gas flow path 7 and supplying 100 W of high-frequency power. It is possible to etch to a certain extent.

  However, the etching by the plasma processing apparatus and method described in the conventional example has two problems. The first problem is that when a groove portion is formed by etching in the processed portion of the workpiece 15, a highly perpendicular shape cannot be obtained in the groove portion, and the second problem is that the workpiece is processed. When the etching depth of the 15 processed parts reaches a certain value, the etching stops halfway. As an example, FIG. 20 shows an example of an etching shape obtained when 120 s is processed under the plasma conditions described above.

  FIG. 20 is a cross-sectional view of the etching shape of the groove. First, various parameters for evaluating the etching shape are defined as follows. When the distance between the deepest part of the groove part and the surface W to be processed is the etching depth Y, the part shallow by Y × 0.8 from the bottom of the pattern is β1, and the line width at the depth is the upper edge part of the groove part. A line width X1 is defined, and a portion shallow by Y × 0.2 from the bottom of the pattern is β2, and a line width at the depth is defined as a line width X2 at the bottom of the etched portion. Further, the angle α representing the perpendicularity is an angle formed by the straight line β connecting β1-β2 and the surface W of the workpiece.

  From FIG. 20, in the microfabrication with a depth of several hundred μm, the etching depth Y = 124 μm, the line width X1 = 542 μm at the upper end of the groove, and the line width X2 = 214 μm at the bottom of the groove. The angle α representing the verticality of was 24.3 ° (note that the horizontal and vertical axes in the figure have different orders). The calculation formula of the angle α is as follows.

(Formula 1)
α = Arctan (2 · (0.8Y−0.2Y) / (X1−X2))
Next, FIG. 21 shows the dependency of the etching depth on the etching time. As is clear from the figure, the etching in the depth direction stopped at the etching depth of about 280 μm.

  In view of the above-mentioned conventional problems, the object of the present invention is to obtain an etching shape with good perpendicularity in a desired finely processed portion (processed portion) having a depth on the order of several hundred nm to several hundred μm, and Provided is a plasma processing apparatus and method capable of performing plasma processing without stopping etching in the depth direction.

  In order to achieve the above object, the present invention is configured as follows.

According to the first aspect of the present invention, the first gas outlet having the gas flow path formed therein and the electrode whose potential can be controlled by supplying power or grounding, and ejecting the first gas for discharge. A plasma source in which a first gas ejection surface having a plurality of openings is arranged in parallel to the workpiece;
The first gas is connected to the first gas jet port of the plasma source, and the first gas is passed from the first gas jet port between the first gas jet surface of the plasma source and a workpiece to be processed. A first gas supply device that supplies the gap between
With
A part of the surface of the plasma source facing the object to be processed has a convex part, and the convex part has the first gas ejection surface having an opening of the first gas ejection port of the plasma source. Provided is a plasma processing apparatus in which the convex portion is formed and has a size that can be inserted into a finely processed portion of the workpiece.

  According to a second aspect of the present invention, in the first aspect, the convex portion has a size that can be inserted into a micro-fabricated portion having a depth of the order of several hundred nm to several hundred μm of the workpiece. A plasma processing apparatus is provided.

According to the third aspect of the present invention, the second gas injection port is provided that is arranged at a position different from the first gas ejection surface of the plasma source and ejects the second gas for suppressing discharge,
The second gas is connected to the second gas ejection port and around the gap between the second gas ejection surface of the plasma source and the processed portion of the workpiece from the second gas ejection port. A plasma processing apparatus according to the first or second aspect, further comprising a second gas supply device for supplying the plasma, is provided.

  According to the fourth aspect of the present invention, the plasma source and the plasma source so as to maintain the distance of the gap between the first gas ejection surface of the plasma source and the processed portion of the workpiece to be processed within a certain range. The plasma processing apparatus according to any one of the first to third aspects further includes an inter-electrode gap adjusting device that relatively moves the object to be processed.

  According to the fifth aspect of the present invention, the potential of the plasma source can be controlled by supplying electric power or grounding at a position facing the surface of the plasma source having the opening of the first gas outlet, and the workpiece is mounted. A plasma processing apparatus according to any one of the first to fourth aspects, which includes a counter electrode that can be disposed.

  According to the sixth aspect of the present invention, the plasma source has a multilayer structure in which two or more layers in which a pattern constituting the gas flow path is formed are laminated, and the gas inside the multilayer structure is formed. The flow path has a space as a buffer layer, and among the space cross-sectional areas of the buffer layer, at least one of the space cross-sectional areas parallel to the opening cross-sectional area of the first gas outlet is the first gas outlet. The plasma processing apparatus according to any one of the first to fifth aspects, which is larger than the opening cross-sectional area of

  According to a seventh aspect of the present invention, there is provided the plasma processing apparatus according to the sixth aspect, wherein the material of the layer forming the pattern is mainly composed of Si.

  According to the eighth aspect of the present invention, the opening length of the first gas outlet is such that the opening shape of the first gas outlet is a circle or an ellipse, and the diameter or minor axis is 200 nm or more and 50 μm or less. A plasma processing apparatus according to any one of the first to seventh aspects is provided.

  According to the ninth aspect of the present invention, the opening length of the first gas outlet is such that the opening shape of the first gas outlet is a polygon, and one or more of one side or diagonal is 200 nm or more. The plasma processing apparatus according to any one of the first to seventh aspects, which is 50 μm or less.

  According to the tenth aspect of the present invention, the opening length of the second gas ejection port is such that the opening shape of the second gas ejection port is a circle or an ellipse, and the diameter or minor axis is 200 nm or more and 50 μm or less. A plasma processing apparatus according to the third aspect is provided.

  According to the eleventh aspect of the present invention, the opening length of the second gas outlet is such that the opening shape of the second gas outlet is a polygon, and one or more of one side or diagonal is 200 nm or more. The plasma processing apparatus according to the third aspect is 50 μm or less.

According to the twelfth aspect of the present invention, the first gas outlet having the gas flow path formed therein and the electrode whose potential can be controlled by power supply or grounding, and ejecting the first gas for discharge. The first gas is supplied by a first gas supply device to the first gas outlet of a plasma source in which a first gas ejection surface having an opening is arranged in parallel to the object to be processed, and the first gas While the first gas is ejected from a gas ejection port into a gap between the first gas ejection surface of the plasma source and a processed portion of the workpiece, the plasma source, the workpiece, or the workpiece Power is supplied to either of the counter electrodes arranged on the surface that forms the surface of the workpiece to be processed, and plasma is generated by generating a potential difference between the plasma source and the workpiece,
A part of a surface of the plasma source facing the object to be processed, the first gas ejection surface having an opening of the first gas ejection port of the plasma source is formed, and the object to be processed Provided is a plasma processing method for performing plasma processing on the workpiece of the workpiece while a convex portion having a size that can be inserted into the microfabricated portion of the workpiece is inserted into the workpiece of the workpiece. .

  According to the thirteenth aspect of the present invention, when the convex portion performs the plasma processing on the workpiece of the workpiece while being inserted into the workpiece of the workpiece, the convex portion is The plasma processing method according to the twelfth aspect, wherein the plasma processing is performed on the processing portion of the processing object while being inserted into a micro-processing portion having a depth on the order of several hundred nm to several hundred μm.

  According to the fourteenth aspect of the present invention, the second gas for suppressing discharge is supplied from the second gas supply port disposed at a position different from the first gas injection surface of the plasma source by the second gas supply device. The plasma processing method according to the twelfth or thirteenth aspect, wherein the plasma gas is ejected from the second gas ejection port around a gap between the second gas ejection surface of the plasma source and a processed portion of the workpiece. .

  According to the fifteenth aspect of the present invention, when the second gas is ejected around the gap from the second gas ejection port, surface modification is performed on a side surface portion of the workpiece to be processed. A plasma processing method according to the fourteenth aspect is provided.

  According to the sixteenth aspect of the present invention, when the convex portion performs the plasma processing on the workpiece of the workpiece while being inserted into the workpiece of the workpiece, the plasma source of the plasma source A twelfth to fifteenth to fifteenth to fifteenth moves the plasma source and the object to be processed relatively so as to maintain the distance of the gap between the one gas ejection surface and the processed part of the object to be processed within a certain range. A plasma processing method according to any one aspect is provided.

  According to a seventeenth aspect of the present invention, there is provided the plasma processing method according to any one of the twelfth to sixteenth aspects, wherein the plasma treatment is performed at a pressure near atmospheric pressure or higher.

  According to the plasma processing apparatus and method of the present invention, an etching shape with good perpendicularity can be obtained in a desired processing portion having a depth of several hundreds nm to several hundreds μm, for example, a micro-processing portion, and the depth direction can be obtained. Plasma treatment can be performed without stopping etching.

  Before continuing the description of the present invention, the same parts are denoted by the same reference numerals in the accompanying drawings.

  Before describing the embodiments of the present invention, various aspects of the present invention and the effects thereof will be described first.

A plasma processing apparatus according to one aspect of the present invention includes a plasma source having a gas flow path and an electrode whose potential can be controlled by power supply or grounding, and an opening of a first gas outlet of the plasma source. In the plasma processing apparatus in which the surface having the portion can be installed substantially parallel to the position where the object to be processed can be disposed, and connected to the gas supply apparatus via the gas supply port,
The plasma source has a multilayer structure in which two or more layers having patterns formed therein are stacked, and the gas flow path in the multilayer structure has a space as a buffer layer, and the space cross-sectional area of the buffer layer is Of these, at least one of the spatial cross-sectional areas parallel to the opening cross-sectional area of the first gas jetting port is larger than the opening cross-sectional area of the first gas jetting port.

  With such a configuration, it becomes possible to make the gas jetting in the plane having the first gas jetting port uniform, and to generate uniform plasma in the plane. Therefore, it is possible to perform plasma processing without forming a taper shape unnecessarily, so that it is easy to obtain an etching shape with good perpendicularity in a desired finely processed portion and it is difficult to stop etching in the depth direction. Can be realized.

  In the plasma processing apparatus according to one aspect of the present invention, it is preferable that the second gas ejection port is preferably provided at a position different from the surface having the opening of the first gas ejection port.

  With such a configuration, it is possible to suppress the generation of plasma at the side portion of the object to be processed, and it is possible to realize a plasma processing apparatus that can easily obtain an etching shape with good perpendicularity in a desired finely processed portion.

  The plasma processing apparatus according to one aspect of the present invention preferably includes a moving mechanism that can adjust the distance between the plasma source and the object to be processed and the distance between the plasma source and the counter electrode.

  With such a configuration, it is possible to keep the distance between the plasma source and the bottom of the object to be processed substantially constant, and it is possible to realize a plasma processing apparatus in which etching in the depth direction is difficult to stop at a desired finely processed portion.

  In the plasma processing apparatus according to one aspect of the present invention, preferably, the potential can be controlled by supplying electric power or grounding the surface opposite to the surface of the plasma source having the opening of the first gas ejection port. And it is desirable to provide the counter electrode which can mount a to-be-processed object.

  With such a configuration, it is possible to efficiently increase the voltage generated between the plasma source and the bottom of the workpiece to be processed, and at the side portion of the plasma source and the workpiece to be processed. Plasma generation can be suppressed, and a plasma processing apparatus that can easily obtain an etching shape with good perpendicularity can be realized in a desired finely processed portion.

  In the plasma processing apparatus according to one aspect of the present invention, preferably, a part of the plasma source is a distance between the surface of the plasma source having the opening of the first gas outlet and the object to be processed, and It is desirable to have a convex shape so that the distance between the surface having the opening of the first gas jet port of the plasma source and the counter electrode is minimized.

  With such a configuration, it is possible to keep the distance between the plasma source and the bottom of the object to be processed substantially constant, and it is possible to realize a plasma processing apparatus in which etching in the depth direction is difficult to stop at a desired finely processed portion.

  In the plasma processing apparatus according to one aspect of the present invention, it is preferable that the pattern formed in the plasma source includes at least a gas flow path and also includes a liquid flow path.

  With such a configuration, by cooling the plasma source, it is possible to suppress the generated plasma from being transferred to arc discharge (sparks), and plasma processing is performed without unnecessarily oxidizing the bottom of the workpiece. Therefore, it is possible to realize a plasma processing apparatus in which etching in the depth direction is difficult to stop at a desired finely processed portion.

In the plasma processing apparatus according to one aspect of the present invention, it is preferable that the material of the layer forming the pattern is a material having a volume resistivity of 10 ⁻¹ Ω · cm or less.

  With such a configuration, it is possible to reduce power loss at a place other than the desired load, to suppress generation of unnecessary heat, or to avoid difficulty in matching with the desired load. There are advantages.

  In the plasma processing apparatus according to one aspect of the present invention, it is preferable that the material of the layer forming the pattern is mainly composed of Si.

  With such a configuration, the voltage generated between the plasma source and the bottom of the workpiece to be processed is controlled by controlling the electrical conductivity of the material at a relatively low cost and with high workability. There is an advantage that it can be controlled from.

  In the plasma processing apparatus according to one aspect of the present invention, preferably, the surface having the opening of the first gas ejection port is coated with a layer having an etching rate lower than that of Si with respect to a gas containing halogen. It is desirable that

  With such a configuration, there is an advantage that the consumption of the plasma source due to the plasma active species can be suppressed and the maintenance cycle of the component parts can be improved.

  More preferably, the layer having an etching rate lower than Si is mainly composed of at least one of Ag, Al, Au, Co, Cr, Cu, Fe, Mg, Mo, Ni, Pt, Ti, Ta, and W. It is desirable to be a metal material or an insulating material composed of oxides, nitrides, and fluorides containing these elements and Si, and is less reactive than halogen gas to Si. There is an advantage that it is possible to suppress the consumption of components and to further improve the maintenance cycle of the component parts.

  In the plasma processing apparatus according to one aspect of the present invention, it is preferable that the pattern and the first gas ejection port are a plasma etching process under reduced pressure, an etching process using a chemical solution, a processing process using an electric discharge process, or a laser. It is preferably formed by processing by processing.

  With such a configuration, there is an advantage that patterning can be performed with processing dimensions and accuracy that are difficult to obtain by general machining.

  In the plasma processing apparatus according to one aspect of the present invention, preferably, the opening length of the first gas jet port is a diameter or an opening length when the opening shape of the first gas jet port is a circle or an ellipse. The minor axis is desirably 200 nm or more and 50 μm or less.

  With such a configuration, there is an advantage that the smaller the opening length, the better the in-plane gas uniformity, and the more easily the plasma becomes uniform or the occurrence of arc discharge (spark) is more likely to be suppressed. However, if the opening length is too small, it is difficult to process the plasma source when it is manufactured. Therefore, it is preferably approximately 200 nm to 50 μm.

  In the plasma processing apparatus according to one aspect of the present invention, preferably, the opening length of the first gas ejection port is one side or a diagonal line when the opening shape of the first gas ejection port is a polygon. It is desirable that one or more of these be 200 nm or more and 50 μm or less.

  With such a configuration, there is an advantage that the smaller the opening length, the better the in-plane gas uniformity, and the more easily the plasma becomes uniform or the occurrence of arc discharge (spark) is more likely to be suppressed. However, if the opening length is too small, it is difficult to process the plasma source when it is manufactured. Therefore, it is preferably approximately 200 nm to 50 μm.

  Further, in the plasma processing apparatus according to one aspect of the present invention, preferably, the opening length of the second gas outlet is a diameter or a length when the opening shape of the second gas outlet is a circle or an ellipse. The minor axis is desirably 200 nm or more and 50 μm or less.

  With such a configuration, there is an advantage that the smaller the opening length, the better the in-plane gas uniformity, and the more easily the plasma becomes uniform or the occurrence of arc discharge (spark) is more likely to be suppressed. However, if the opening length is too small, it is difficult to process the plasma source when it is manufactured. Therefore, it is preferably approximately 200 nm to 50 μm.

  In the plasma processing apparatus according to one aspect of the present invention, preferably, the opening length of the second gas outlet is one side or a diagonal line when the opening shape of the second gas outlet is a polygon. It is desirable that one or more of these be 200 nm or more and 50 μm or less.

  With such a configuration, there is an advantage that the smaller the opening length, the better the in-plane gas uniformity, and the more easily the plasma becomes uniform or the occurrence of arc discharge (spark) is more likely to be suppressed. However, if the opening length is too small, it is difficult to process the plasma source when it is manufactured. Therefore, it is preferably approximately 200 nm to 50 μm.

  A plasma processing method according to one aspect of the present invention includes a plasma source having a gas flow path and an electrode whose potential can be controlled by power supply or grounding, and a surface having an opening of a first gas outlet. The plasma source, the object to be processed, or the surface to be processed and the front and back of the object to be processed are ejected from the first gas outlet through the first gas outlet. A plasma processing method for generating plasma by supplying electric power to any of the counter electrodes arranged on a surface forming a plasma and generating a potential difference between a plasma source and a processing target portion of the processing object. Alternatively, before and after the plasma processing step, the gap distance between the surface of the workpiece of the plasma source closest to the workpiece and the workpiece of the workpiece is reduced.

  With such a configuration, it is possible to keep the distance between the plasma source and the bottom of the object to be processed substantially constant, and it is possible to realize a plasma processing method in which etching in the depth direction is difficult to stop at a desired finely processed portion.

  A plasma processing method according to one aspect of the present invention includes a plasma source having a gas flow path and an electrode whose potential can be controlled by power supply or grounding, and a surface having an opening of a first gas outlet. The plasma source, the object to be processed, or the surface to be processed and the front and back of the object to be processed are ejected from the first gas outlet through the first gas outlet. A plasma processing method for generating plasma by supplying electric power to any of the counter electrodes arranged on the surface forming the plasma and generating a potential difference between the plasma source and the processed portion of the processing object. The cross-sectional area of the workpiece is larger than the cross-sectional area of the surface having the opening of the gas jet port.

  With such a configuration, it is possible to keep the distance between the plasma source and the bottom of the object to be processed substantially constant, and it is possible to realize a plasma processing method in which etching in the depth direction is difficult to stop at a desired finely processed portion.

  A plasma processing method according to one aspect of the present invention includes a plasma source having a gas flow path and an electrode whose potential can be controlled by power supply or grounding, and a surface having an opening of a first gas outlet. The plasma source, the object to be processed, or the surface to be processed and the front and back of the object to be processed are ejected from the first gas outlet through the first gas outlet. A dicing processing method for generating plasma by supplying electric power to any of the counter electrodes arranged on the surface forming the plasma and generating a potential difference between the plasma source and the processed portion of the processing object. Alternatively, before and after the plasma processing step, the gap distance between the surface of the workpiece of the plasma source closest to the workpiece and the workpiece of the workpiece is reduced.

  With such a configuration, it is possible to keep the distance between the plasma source and the bottom of the object to be processed substantially constant, and it is possible to realize a plasma processing method in which etching in the depth direction is difficult to stop at a desired finely processed portion.

A plasma processing method according to one aspect of the present invention includes a plasma source having a gas flow path and an electrode whose potential can be controlled by power supply or grounding, and a surface having an opening of a first gas outlet. The plasma source, the object to be processed, or the surface to be processed and the front and back of the object to be processed are ejected from the first gas outlet through the first gas outlet. A dicing process method for generating plasma by supplying electric power to any of the counter electrodes arranged on the surface that forms a plasma and generating a potential difference between the plasma source and the processed part of the processing object,
The cross-sectional area of the workpiece is larger than the cross-sectional area of the surface having the opening of the first gas ejection port.

  With such a configuration, it is possible to keep the distance between the plasma source and the bottom of the object to be processed substantially constant, and it is possible to realize a plasma processing method in which etching in the depth direction is difficult to stop at a desired finely processed portion.

  Moreover, according to the plasma processing method concerning the said aspect of this invention, Preferably, it is a to-be-processed object from the 2nd gas jet nozzle provided in the position different from the surface which has the opening part of a 1st gas jet nozzle. In contrast, it is desirable to eject the second gas.

  With such a configuration, it is possible to suppress the generation of plasma at the side portion to be processed, and it is possible to realize a plasma processing method that facilitates obtaining an etching shape with good verticality in a desired finely processed portion.

  More preferably, the second gas is ejected from the second gas jet port provided at a position different from the surface having the opening of the first gas jet port, Desirably, a desired surface modification is applied to the side surface of the work surface.

  With such a configuration, it becomes possible to suppress the generation of plasma on the side surface of the object to be processed, or it is possible to reduce the etching rate on the side surface of the object to be processed even if plasma is generated, It is possible to realize a plasma processing method that facilitates obtaining an etching shape with better verticality in a desired finely processed portion.

  Even more preferably, the desired surface modification is any one of fluorination, nitridation and oxidation.

  With such a configuration, it becomes possible to suppress the generation of plasma on the side surface of the object to be processed, or it is possible to reduce the etching rate on the side surface of the object to be processed even if plasma is generated, It is possible to realize a plasma processing method in which it is easy to obtain an etching shape with still better verticality in a desired finely processed portion.

  In the plasma processing method according to the aspect of the present invention, preferably, the first gas contains one or more of He, Ar, Kr, Ne, and Xe, and the total content of these five gases. The amount is desirably 80% or more by partial pressure ratio.

  With such a configuration, generation of arc discharge (spark) can be suppressed, plasma processing can be performed without unnecessarily oxidizing the bottom of the object to be processed, and etching in the depth direction can be performed at a desired microfabricated portion. It is possible to realize a plasma processing method that is difficult to stop.

In the plasma processing method according to the aspect of the present invention, preferably, the first gas is CxFy such as SF ₆ or CF ₄ (x and y are natural numbers), NF ₃ , Cl ₂ , HBr, or the like. It is desirable to contain at least one kind of a halogen-containing gas, N ₂ , air or O ₂ gas.

  Such a configuration has an advantage that the processing speed is improved.

In the plasma processing method according to the aspect of the present invention, preferably, the second gas is CxFy (x and y are natural numbers) such as SF ₆ and CF ₄ , NF ₃ , fluorine-containing gas, N It is desirable that the total content of at least one kind of ₂ or O ₂ gas is 90% or more in terms of partial pressure ratio.

  With such a configuration, it becomes possible to suppress the generation of plasma on the side surface of the object to be processed, or it is possible to reduce the etching rate on the side surface of the object to be processed even if plasma is generated, It is possible to realize a plasma processing method in which it is easy to obtain an etching shape with still better verticality in a desired finely processed portion.

  Moreover, according to the plasma processing method concerning the said aspect of this invention, it is desirable for a plasma processing to etch a to-be-processed object suitably.

  A remarkable effect can be expected in the case of etching treatment.

  In addition, according to the plasma processing method of the aspect of the present invention, it is preferable that the plasma processing is performed at a pressure near or higher than atmospheric pressure.

  With such a configuration, operations such as vacuum conveyance can be omitted, and there are various advantages such as improved tact time and reduced apparatus cost.

  Further, according to the plasma processing method according to the aspect of the present invention, it is preferable that the plasma form is so-called glow discharge in terms of current-voltage characteristics.

  With such a configuration, an increase in gas temperature can be suppressed while securing a certain processing speed, so that there is an advantage that plasma processing can be continued without causing thermal damage to the object to be processed.

  As described above, according to the plasma processing apparatus and method of the present invention, an etching shape with good perpendicularity can be obtained in a desired microfabricated portion having a depth of the order of several hundred nm to several hundred μm, and the depth can be obtained. Plasma processing can be performed without stopping etching in the direction.

  Embodiments according to the present invention will be described below in detail with reference to the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 and 2A to 2C are external configuration diagrams of a plasma processing apparatus equipped with the plasma source 100 of the present invention.

  As shown in FIG. 1, the plasma source 100 of the plasma processing apparatus includes, for example, three laminated members 1, 2 and 3 each having a square plane, a first gas pipe 4a, a second gas pipe 4b, a water supply pipe 5a, a drain pipe 5b, and a conductor. The conductive wires 6 and the four insulating tubes 7 are connected to the third laminated member 3 by an adhesive 8.

  As described above, the plasma processing apparatus is mainly composed of three laminated members, that is, the first, second, and third laminated members 1, 2, and 3, and the shape is convex in the y direction. The distance between the front end portion of the projection, that is, the front end surface of the convex portion which is the first laminated member 1 and the object to be processed 15 is the distance between the various parts of the plasma source 100 facing the object to be processed 15 and the object to be processed 15. Of these, it is designed to be the smallest. 2A to 2C are enlarged plan views seen from the upper side of FIG. 1, and FIG. 3 is a cross-sectional view taken along the plane AA-AA in FIG. 2A.

  FIG. 3 shows three laminated members, that is, first, second, and third laminated members 1, 2, and 3, a first gas pipe 4a, a second gas pipe 4b, a water supply pipe 5a, and a drain pipe, as in FIG. 5b, conducting wire 6, four insulating tubes 7 are shown. The first gas flow paths 9 formed inside the second and third laminated members 2 and 3 are connected to each other, and are formed inside the first, second and third laminated members 1, 2 and 3, respectively. The first, second, and third laminated members 1, 2, and 3 are connected so that the eleventh gas flow path 10 is also coupled to each other. The first gas pipe 4a and the second gas pipe 4b are connected to the first gas passage 9 and the eleventh gas passage 10 of the third laminated member 3 through the insulating pipe 7 and the insulating pipe 7, respectively. ing. The water supply pipe 5a and the drain pipe 5b are connected to the third laminated member 3 so as to be connected to the water channels 11a and 11b formed in the third laminated member 3 through the insulating pipe 7 and the insulating pipe 7, respectively. ing. Further, the water channels 11 a and 11 b are connected inside the third laminated member 3. The outer diameter Φ of each of the first gas pipe 4a, the second gas pipe 4b, the water supply pipe 5a, and the drain pipe 5b is, for example, 1/16 inch.

  Next, FIG. 4 shows a cross-sectional view of the first laminated member 1. 2B and 2C show an enlarged plan view of the first laminated member 1 and the second laminated member 2, and an enlarged plan view of the first laminated member 1, respectively. 4 has a four-layer structure including a first layer 1a, a second layer 1b, a third layer 1c, and a fourth layer 1d. The surface facing the workpiece 15, that is, the first gas ejection surface 1 a-1 is provided with dozens, preferably evenly, the first gas ejection ports 12 a so as to penetrate the first layer 1 a. The first gas can be uniformly ejected on the gas ejection surface 1a-1. The second layer 1b includes a first buffer layer 13a-a that communicates with all the first gas ejection ports 12a, and a plurality of second gas flows that communicate with all of the first buffer layers 13a-a and penetrate therethrough. Roads 9a-a are provided. The third layer 1c includes second buffer layers 13a-b communicating with all the second gas flow paths 9a-a, and third buffers penetrating all the second buffer layers 13a-b and penetrating therethrough. Gas flow paths 9a-b are provided. The fourth layer 1d is provided with third buffer layers 13a-c communicating with all the third gas flow paths 9a-b. As an example, the length in the x direction of the first layer 1a, the second layer 1b, the third layer 1c, and the fourth layer 1d in FIG. 4 (the length of one side of the first laminated member 1 having a square planar shape). A is 800 μm, length (the length of one side of the square region where the first gas jet port 12a of the first laminated member 1 is formed) B is 700 μm, and the length (the planar shape of the first laminated member 1 is square) The length of one side of the buffer layer 13a-c) C is 400 μm, the thickness D in the y direction of the first layer 1a is 50 μm, the thickness E in the y direction of the second layer 1b is 80 μm, and the y of the third layer 1c The thickness F in the direction is 100 μm, the thickness G in the y direction of the fourth layer 1d is 370 μm, the thickness H of the first buffer layer 13a-a is 50 μm, and the thickness I of the second buffer layer 13a-b is 50 μm. did. As an example, Si was used for the layers 1a, 1b, 1c and 1d. Further, as an example, each opening diameter of the first gas ejection port 12a is set to Φ30 μm.

  In addition, there is no opening part of the said 1st gas ejection port in the surface which opposes the said to-be-processed object 15 of the said plasma source 100 other than the said convex part. Further, as will be described later, only the convex portion can be inserted into a microfabricated portion having a depth of the order of several hundred nm to several hundred μm of the workpiece 15, and the height of the convex portion is The processing depth of the workpiece 15 is larger. Here, the height of the convex portion must be larger than the desired processing depth of the workpiece 15 (processing depth after processing). In other words, when the desired processing depth of the workpiece 15 is Y, it is desirable that NN ≧ Y + 100 μm holds between the height NN of the convex portion (NN = D + E + F + G in FIG. 4). Here, the reason why the thickness of the second laminated member 2 is 100 μm is that the distance between the formation surface of the second gas ejection port 12 b described later and the processed portion of the workpiece 15 is smaller than 100 μm. The space formed between the surface on which the gas ejection port 12b is formed and the vicinity of the desired processed portion of the workpiece 15 becomes very small, and the second gas is sufficiently near the desired processed portion. It is because it becomes difficult to reach. Moreover, since the 1st laminated member 1 is a laminated structure of two or more layers, it is preferable that the height NN of the convex part comprised by the 1st laminated member 1 is about 100 micrometers or more in general. This is because when Si is used as the material constituting each layer of the first laminated member 1, the Si substrate constituting each layer is diced into chip sizes, or the chips constituting each layer are bonded together. This is because it is desirable that the thickness of one Si layer be approximately 50 μm or more in order to constitute the first laminated member 1.

In addition, as shown in FIG. 4, each opening cross-sectional area of the 1st gas ejection port 12a is made smaller than the space cross-sectional area of 1st buffer layer 13a-a parallel to the cross-sectional area. The flow rate uniformity of the jetted gas in the first gas jetting surface 1a-1 including the opening of the gas jetting port 12a is improved. Actually, as an example, the opening cross-sectional area of the first gas outlet 12a is set to 706 μm ² (since it is a circle having a radius of 15 μm), and the spatial cross-sectional area of the first buffer layer 13a-a parallel to this cross-sectional area is set. (Because one side is a square of 750 μm), it was set to 562,500 μm ² .

  Note that the relationship between the first and second buffer layers 13a-a and 13a-b and the diameter of the first gas outlet 12a is the same as that of the workpiece 15 of the first and second buffer layers 13a-a and 13a-b. The height PP in the plane parallel to the direction for jetting the gas (in FIG. 4, H and I are the height in the plane parallel to the xy plane) and the opening of the first gas outlet 12a. It is desirable that PP / QQ <1 generally holds between the apertures QQ (not shown). With such a design, the gas introduced into the first and second buffer layers 13a-a and 13a-b can be sufficiently distributed throughout the first and second buffer layers 13a-a and 13a-b. Therefore, the flow rate of the gas ejected from each first gas ejection port 12a can be made equal, and the gas can be supplied more uniformly in the plane.

  Next, FIG. 5 shows a cross-sectional view of the second laminated member 2. In FIG. 5, the second laminated member 2 has a two-layer structure composed of layers 2a and 2b. In the layer 2a, a fourth gas flow path 9b-a is provided in the central portion continuously with the fourth buffer layer 13b-a that can communicate with the third buffer layer 13a-c of the first laminated member 1, A second gas ejection port 12b is provided around the fourth gas flow path 9b-a continuously with the fifth buffer layer 13b-b. As an example, as shown in FIG. 2B, the second gas ejection ports 12b are arranged in a square frame shape evenly around the first laminated member 1, and surround all the side surfaces of the first laminated member 1. The second gas can be ejected in a substantially rectangular tube shape that reaches the periphery of the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a of the first laminated member 1. The layer 2b is provided with a fifth gas channel 9b-b and a twelfth gas channel 10b-a that can communicate with the fourth gas channel 9b-a. As an example, the length J in the x direction of the second laminated member 2 composed of the two layers 2a and 2b is 2.5 mm, and the length K in the x direction of the fourth buffer layer 13b-a is 300 μm. The thicknesses L and M in the y direction of the layers 2a and 2b are both 100 μm. As an example, Si was used for the layers 2a and 2b. Further, as an example, each opening diameter of the second gas ejection port 12b is Φ30 μm.

  The second gas passage 9a-a, the third gas passage 9a-b, the fourth gas passage 9b-a, and the fifth gas passage 9b-b constitute the first gas passage 9. ing. The twelfth gas channel 10b-a, the thirteenth gas channel 10c-a, and the fourteenth gas channel 10c-b constitute the eleventh gas channel 10.

  Next, FIG. 6 shows a cross-sectional view of the third laminated member 3. The third laminated member 3 in FIG. 6 has a two-layer structure composed of a layer 3a and a layer 3b. The layer 3a includes a sixth gas channel 9c-a that can communicate with the fifth gas channel 9b-b, a thirteenth gas channel 10c-a that can communicate with the twelfth gas channel 10b-a, The water channels 11a and 11b which are not opened are formed in the two laminated member side. The layer 3b includes a seventh gas channel 9c-b that can communicate with the sixth gas channel 9c-a, and a fourteenth gas channel 10c-b that can communicate with the thirteenth gas channel 10c-a. A water supply channel 14a continuous to the water channel 11a and a drainage channel 14b continuous to the water channel 11b are provided. As an example, the length N in the x direction of the third laminated member 3 is 10 mm, the thicknesses O and P in the y direction of the respective layers 3a and 3b are both 760 μm, and the thickness Q in the y direction of the water channels 11a and 11b is The thickness was 500 μm. As an example, Si was used for the layers 3a and 3b.

  In the formation of the plasma source 100 of the plasma processing apparatus described above, as an example, room temperature bonding technology was used for bonding the layers. The room-temperature bonding technique here uses, for example, Si as a material to be bonded, and after performing a low-pressure plasma treatment on the Si bonding surface (that is, each of the opposing bonding surfaces of the two layers to be bonded) This is a technique in which bonded surfaces subjected to Si plasma treatment are brought into contact with each other while being reduced in pressure, and bonded by applying mechanical stress so that the bonded surfaces come into contact with each other.

Further, Si used in the layers 1a, 1b, 1c, 1d, 2a, 2b, 3a, and 3b is Si having a volume resistivity of 10 ⁻² Ω · cm in order to ensure a certain degree of conductivity. . When the volume resistivity is larger than 10 ⁻² Ω · cm, the consumption due to heat increases, the efficiency is deteriorated, the temperature of Si is remarkably increased, and there is a possibility that the joint surface is peeled off.

  The plasma source 100 described above can operate from several Pa to several atmospheres, but typically operates at a pressure in the range of about 10,000 Pa to 3 atmospheres. In particular, operation near atmospheric pressure is particularly preferable because a strict sealing structure and a special exhaust device are not required, and diffusion of plasma and active particles is moderately suppressed.

  FIG. 7A shows the entire plasma processing apparatus including the plasma source 100, and FIG. 7B is an enlarged cross-sectional view of the plasma source 100. In addition to the plasma source 100, the plasma processing apparatus includes a first gas supply device 16a, a second gas supply device 16b, a high frequency power supply 17, a constant temperature water circulation device 18, an interelectrode gap adjusting mechanism 120, and a control device. 110.

The first gas supply device 16a is connected to the first gas pipe 4a, and helium as an example of an inert gas and an example of a reactive gas from the first gas supply device 16a through the first gas pipe 4a. CF ₄ can be supplied to the first gas flow path 9 as an example of a discharge gas (first gas).

The second gas supply device 16b is connected to the second gas pipe 4b, and O ₂ as an example of a discharge suppressing gas (second gas) is supplied from the second gas supply device 16b through the second gas pipe 4b. The eleventh gas flow path 10 can be supplied.

  The high frequency power supply 17 is connected to the conductive wire 6 and supplies high frequency power to the plasma source 100.

  The constant-temperature water circulation device 18 is connected to the water supply pipe 5a and the drain pipe 5b so that the cooling water can be supplied and drained into the third laminated member 3 through the water supply pipe 5a and the drain pipe 5b.

  The inter-electrode gap adjusting mechanism 120 can move the plasma source 100 in the contact / separation direction (y direction) with respect to the workpiece 15 (preferably, the contact / separation direction (y direction) and the contact / separation direction are mutually The first gas ejection surface 1a having the opening of the first gas ejection port 12a of the first laminated member 1 is supported by being supported so as to be movable in two directions, the orthogonal direction (x direction). -1) and the workpiece 15 can be adjusted to a predetermined value or within an allowable range.

  The control device 110 includes a first gas supply device 16a, a second gas supply device 16b, a high frequency power supply 17, a constant temperature water circulation device 18, and an inter-electrode gap adjustment mechanism 120 for performing plasma processing by the plasma source 100, respectively. Control the operation.

  The inter-electrode gap adjusting mechanism 120 constitutes the inter-electrode gap adjusting apparatus 20 in cooperation with the control device 110. As a specific example of the inter-electrode gap adjusting apparatus 20, the inter-electrode gap adjusting apparatus 20 has the following structure. It can be set as the gap adjusting device 20A.

  As shown in FIG. 7E, the plasma source 100 is fixed to a jig 123a including a pair of bars 123c and a stage 123d that fixes both ends of the pair of bars 123c. For example, the stage 123d of the jig 123a The plasma source 100 is connected to a pair of one-axis actuators 123b (specifically, a pair of motors) whose operation is controlled by the control device 110, and is driven by the control device 110 in synchronization with the pair of one-axis actuators 123b. Can be moved in the y-axis direction. Further, the upper ends of the pair of uniaxial actuators 123b are fixed to the base 122, connected to the base 122, and controlled by the control device 110 to be controlled by the control device 110, and the plasma source together with the pair of uniaxial actuators 123b. 100 can move in the xz plane.

  For example, two or more length measuring lasers 124 are fixed to the lower bar 123c of the jig 123a and placed on the plasma source 100 and the counter electrode 125 under the operation control by the control device 110. The distance R made with the workpiece 15 can be measured in a timely manner, and the measurement result can be input to the control device 110.

  A gap (a distance R between the tip surface of the plasma source 100 (the surface closest to the processed portion of the workpiece 15) and the processed portion of the workpiece 15) is measured by the length measuring laser 124, and the value is calculated. By feeding back to the control device 110 as a measurement result, the movement distance of the pair of single-axis actuators 123b is calculated by the control device 110, and the pair of single-axis actuators 123b is driven and controlled, so that an optimal gap can always be maintained. it can.

  As described above, the inter-electrode gap adjusting mechanism 120 includes the pair of single-axis actuators 123b, the jig 123a (the pair of bars 123c and the stage 123d), the base 122, the xz stage 121, and the length measuring laser 124. And controlling the pair of one-axis actuators 123b and the xz stage 121 by the control device 110 based on the processing information input to the control device 110 in advance and the input from the length measuring laser 124, etc. The inter-electrode gap adjusting device 20A can be configured.

  The present invention is not limited to the configuration of the interelectrode gap adjusting device 20A, but may be an interelectrode gap adjusting device 20B as shown in FIG. 7F.

  The inter-electrode gap adjusting device 20B shown in FIG. 7F is an effective example in the case where a transparent substrate (a substrate that mainly transmits the infrared wavelength region) is used as the object 15 to be processed.

  The counter electrode 125 is made of a transparent material such as quartz, and (i) the counter electrode 125 is set to a floating potential instead of the ground potential. (Ii) quartz in which a transparent conductive film such as ITO is formed on the surface of the counter electrode 125. The ground potential is set by using.

  At least two length measuring lasers 124 </ b> A are fixed to the lower xz stage 121 </ b> A whose operation is controlled by the control device 110 on the back surface of the counter electrode 125, and are arranged above the plasma source 100 under the control of the control device 110. The lower xz stage 121A can be moved in the xz plane together with the two length measuring lasers 124A in synchronization with the upper xz stage 121 or independently of the upper xz stage 121. . Then, under the operation control by the control device 110, the distance between the plasma source 100 and the length measuring laser 124A can be measured in a timely manner, and the measurement result can be input to the control device 110. It is also possible to measure the distance between the bottom of the processed part of the workpiece 15 and the length measuring laser 124A, and input the measurement result to the control device 110. Measurement of the processing depth and the bottom of the processed part It is possible to measure the distance between the plasma source 100 and input the measurement result to the control device 110.

  The measured numerical value is fed back to the control device 110 as a measurement result, and the control device 110 controls the driving of the pair of single-axis actuators 123b each time, thereby performing an optimal gap in consideration of the progress of processing while performing plasma processing. (Distance R between the front end surface of the plasma source 100 (the surface closest to the processing portion of the workpiece 15) and the processing portion of the workpiece 15).

  Thus, the length measurement laser 124A, the lower xz stage 121A, the upper xz stage 121, the jig 123a (a pair of bars 123c and a stage 123d), a pair of one-axis actuators 123b, and a base 122, the inter-electrode gap adjusting mechanism 120 is configured, and based on the processing information input in advance to the control device 110 and the input from the length measuring laser 124A, the control device 110 causes the pair of one-axis actuators 123b and the upper x By controlling the −z stage 121 and the lower xz stage 121 </ b> A, the inter-electrode gap adjusting device 20 </ b> B can be configured.

  Furthermore, the present invention is not limited to the configuration of the interelectrode gap adjusting devices 20A and 20B, and may be an interelectrode gap adjusting device 20C as shown in FIG. 7G.

  As shown in FIG. 7G, the control device 110 operates the pair of uniaxial actuators 123b at the time of discharge OFF to bring the tip of the convex portion of the plasma source 100 into contact with the bottom of the workpiece to be processed 15; Position information at the time when the tip of the convex portion of the plasma source 100 contacts the bottom of the workpiece is acquired. By repeating this operation at an appropriate time by the control device 110, it is possible to measure the processing depth advanced by the plasma processing in a specific time range from the position information by contact.

  Whether or not the tip of the convex portion of the plasma source 100 is in contact with the bottom of the processed portion of the workpiece 15 can be measured and determined by the following two methods. (I) The pair of uniaxial actuators 123b are operated at a constant speed while measuring the distance between the tip of the convex portion of the plasma source 100 and the workpiece 15 by the length measuring laser 124. When the tip of the convex portion of the plasma source 100 comes into contact with the workpiece 15, the change in the distance measured by the length measuring laser 124 becomes zero. (Ii) Although a pair of uniaxial actuators 123b is used as an example of a driving device that moves the plasma source 100, the load applied to each of a pair of motors as a specific example of the pair of uniaxial actuators 123b is measured. However, when the plasma source 100 is operated, when the tip of the convex portion of the plasma source 100 and the workpiece 15 come into contact with each other, the load load increases rapidly.

  By controlling the operation of the upper xz stage 121, the pair of one-axis actuators 123b, the high frequency power source 17, the interelectrode gap adjusting device 20C, and the like by the control device 110, plasma processing → plasma processing stop → contact clearance (tip of the plasma source 100) Measurement of the distance R) between the first gas injection surface 1a-1 which is the surface and the processed portion of the workpiece 15 → optimum gap adjustment → plasma treatment stop is repeated to adjust the optimum gap at regular intervals. can do.

  When the inter-electrode gap adjusting device 20C of FIG. 7G is actually used, a total time required for processing (calculated from the etching rate) is calculated in advance by the calculation unit 110a of the control device 110, and the total is calculated. It is preferable that the control device 110 stops the plasma processing and measure the distance by contact every time corresponding to approximately 1/5 to 1/10 of the above time. Therefore, when plasma processing is performed under the same conditions as in the first embodiment, it is preferable to perform distance measurement by contact every 70 s to 140 s. If the time for performing the distance measurement is longer than the time corresponding to 1/5 of the total time required for the machining, the machining speed is reduced due to an increase in the gap as the machining progresses. It takes a long time to complete. Further, if the time for performing the distance measurement is shorter than the time corresponding to 1/10 of the total time required for the processing, the time for stopping the plasma processing becomes longer, and the total time required for the processing becomes longer. turn into.

  As described above, the inter-electrode gap adjusting mechanism 120 includes the pair of single-axis actuators 123b, the jig 123a (the pair of bars 123c and the stage 123d), the base 122, the xz stage 121, and the length measuring laser 124. And controlling the pair of one-axis actuators 123b and the xz stage 121 by the control device 110 based on the processing information input to the control device 110 in advance and the input from the length measuring laser 124, etc. The inter-electrode gap adjusting device 20C can be configured.

Here, as an example, FIGS. 7C to 7D are schematic views when a Si substrate is processed as the workpiece 15 using the plasma source 100 described above. As shown in FIG. 7C to FIG. 7D, for example, He as an example of an inert gas and CF ₄ as an example of a reactive gas are supplied from the first gas supply device 16a through the first gas pipe 4a. The first gas is supplied to the first gas flow path 9 (see FIG. 3) at 0.5 sccm as an example of the first gas, and the first gas is injected from the first gas outlet 12a on the first gas ejection surface, and The second gas supply device 16b supplies O ₂ as an example of a discharge suppression gas to the eleventh gas flow path 10 (see FIG. 3) as an example of the _second gas through the second gas pipe 4b. A plasma source is supplied from the high-frequency power source 17 while being ejected from the gas ejection port 12a toward the periphery of the space between the first gas ejection surface 1a-1 and the processed portion of the workpiece 15 through the periphery of the convex portion. By supplying high frequency power to 100, it is shown in FIG. In other words, the plasma 101 can be generated between the first gas ejection surface 1a-1 of the plasma source 100 of the plasma processing apparatus and the processed portion of the Si substrate used as the workpiece 15. At this time, in order to cool the plasma source 100, the cooling water can be supplied to and discharged from the constant temperature water circulation device 18 through the water supply pipe 5a and the drain pipe 5b.

  Further, as shown in the enlarged view of FIG. 7B, the distance formed between the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a of the first laminated member 1, that is, the workpiece 15 is the longest. As an example, an insulating layer 19 made of SiOx having a thickness of about 5 μm is provided on the approaching surface.

Here, the reason why the insulating layer 19 is provided is as follows. Atmospheric pressure plasma is characterized in that it has a higher discharge starting voltage and is more likely to shift to arc discharge than plasma generated under reduced pressure. In general, in order to suppress the transition to arc discharge, an insulating layer is often provided on the electrode surface exposed to plasma. In this embodiment, the first gas ejection surface 1a- having a convex gas ejection port 12a is provided. 1 is provided with an SiO ₂ film as an example of the insulating layer 19. However, a metal film may be provided on the electrode surface from the viewpoints of resistance to etching gas (etching resistance), adhesion to the base, and ease of film formation.

  Further, the inter-electrode gap adjusting device 20 causes the tip surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the workpiece 15 to be processed. Can be adjusted to a desired distance or within an allowable range.

Using such a plasma processing apparatus, first, as an example, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the target The first gas supply device is configured such that the distance R between the workpiece of the Si substrate used as the processing object 15 is adjusted to 300 μm by the inter-electrode gap adjusting device 20 or an arbitrary value between 100 μm and 1000 μm. From 16a, 10 sccm of He and 0.5 sccm of CF ₄ are supplied to the first gas flow path 9 as an example of the first gas, and the first gas is ejected from the first gas ejection port 12a on the first gas ejection surface. In addition, 30 sccm of O ₂ is supplied to the eleventh gas flow path 10 from the second gas supply device 16b as an example of the second gas, and the first gas passes through the periphery of the convex portion from the second gas outlet 12a. Eruption A high frequency power of 12 W is supplied from the high frequency power supply 17 to the plasma source 100 while being ejected toward the periphery of the space between the surface 1a-1 and the processed portion of the workpiece 15, and the plasma source of the plasma processing apparatus 100 is generated in a gap between the tip end surface of 100 (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the workpiece of the Si substrate used as the workpiece 15; Then, a plasma treatment for 700 s was performed on the processed portion of the Si substrate to form an etching groove 15a in the processed portion. At the same time, as an example, the inter-electrode gap adjusting device 20 moves the plasma source 100 of the plasma processing apparatus at a speed of 60 μm / min in the y direction of FIG. 7A (downward direction of FIGS. 7C and 7D). .

  The reason why the lower limit of the gap distance R is set to 100 μm is that the plasma density becomes extremely small when the value is smaller than this value, and the upper limit is set to 1000 μm when the value is larger than this value. This is because it is difficult to generate.

  An example of the etching shape of the workpiece 15 of the Si substrate in the first embodiment is shown in FIG.

  From FIG. 10, for example, the etching depth Y = 663 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 1075 μm at the upper end of the etching groove 15a, and the line width X2 = 868 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 75.4 ° (note that the horizontal axis and the vertical axis in FIG. 8 have different orders). Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  Thus, it is considered that there are the following three reasons why the verticality can be improved and the etching stop can be avoided.

  The first one has a convex portion (first laminated member 1) on a part of the surface of the plasma source 100 facing the workpiece 15, and the first gas of the plasma source 100 is provided on the convex portion. The first gas ejection surface 1a-1 having the opening of the ejection port 12a is formed, and the convex portion is small enough to be inserted into a workpiece, for example, a fine machining portion of the workpiece 15. Therefore, even if the position of the bottom of the microfabricated portion of the workpiece 15 is changed as the etching progresses, if the convex portion is inserted into the microfabricated portion by the interelectrode gap adjusting device 20, This is because the distance R between the workpiece 15 and the plasma source 100 of the plasma processing apparatus can be kept within a certain range (within an allowable range) to some extent. When the distance R between the workpiece 15 and the plasma source 100 of the plasma processing apparatus is larger than the allowable range, the discharge start voltage increases, and it is difficult to maintain and maintain the plasma as explained by Paschen's law. As a result, the etching rate is stopped.

  Second, the surface of the plasma processing apparatus 100 facing the object 15 to be processed has a convex shape to form a convex part, and the first part is the surface of the convex part on the object 15 side. This is because the first gas ejection port 12a is provided only on the gas ejection surface 1a-1. Thereby, plasma can be generated only between the tip of the convex portion of the plasma source 100 of the plasma processing apparatus and the processed portion of the processing object 15, and the side wall of the etching groove 15 a of the processing object 15 is necessary. Etching can be avoided as described above.

Thirdly, the second gas ejection ports 12b are equally arranged in a square frame shape in a row in the second laminated member 2 around the first laminated member 1, and all the convex portions of the plasma source 100 of the plasma processing apparatus are arranged. This is because the second gas is supplied in a substantially rectangular tube shape along the side surface. Thereby, generation of plasma on the side wall of the etching groove 15a of the workpiece 15 can be avoided, and even if plasma is generated on the side wall of the etching groove 15a, Si on the side wall is removed by etching due to the presence of O ₂ gas. The rate at which Si is oxidized can be made larger than the rate at which it is produced.

  As described above, according to the first embodiment, the plasma source 100 is provided with a convex portion that is small enough to be inserted into the microfabricated portion, and the microfabricated portion of the workpiece 15 is processed as the etching progresses. Even if the position of the bottom part changes, the distance between the plasma source 100 and the bottom part of the workpiece 15 is kept substantially constant by configuring the convex part to be inserted into the finely processed part by the interelectrode gap adjusting device 20. Therefore, it is possible to realize a plasma processing apparatus and method in which etching in the depth direction is difficult to stop in a desired microfabricated portion. Therefore, an etching shape with good perpendicularity can be obtained in a desired microfabricated portion having a depth of several hundred nm to several hundred μm, and plasma processing can be performed without stopping etching in the depth direction. it can.

  Moreover, since each opening cross-sectional area of the 1st gas ejection opening 12a was made smaller than the space cross-sectional area of 1st buffer layer 13a-a parallel to the cross-sectional area, 1st gas which has the 1st gas ejection opening 12a It becomes possible to make the gas ejection in the ejection surface 1a-1 more uniform, and it is possible to generate uniform plasma in the first gas ejection surface 1a-1. As a result, plasma processing can be performed without forming an unnecessarily tapered shape at the bottom of the workpiece 15, so that verticality can be obtained in a desired microfabricated portion having a depth of the order of several hundred nm to several hundred μm. A good etching shape can be obtained, and plasma treatment can be performed without stopping etching in the depth direction.

(Second Embodiment)
Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 9A to 10. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that the layer provided on the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a of the first laminated member 1 is changed from the insulating layer 19 to the conductor layer 21. This is the point.

FIG. 9A is a schematic diagram when the Si substrate used as the workpiece 15 is processed using the plasma processing apparatus. As shown in FIG. 9A, for example, from the first gas supply device 16a, He as an example of an inert gas and CF ₄ as an example of a reactive gas are added at 0.5 sccm through the first gas pipe 4a. The first gas passage 9 (see FIG. 3) is supplied as an example of a discharge gas, that is, a first gas, and the second gas is ejected from the first gas ejection port 12a on the first gas ejection surface and the second gas is ejected. A gas for suppressing discharge, that is, O ₂ as an example of the second gas, is supplied from the gas supply device 16b to the eleventh gas flow path 10 (see FIG. 3) via the second gas pipe 4b, and the second gas jet From the outlet 12a, the high-frequency power is supplied from the high-frequency power source 17 to the plasma around the space between the first gas ejection surface 1a-1 and the processed portion of the workpiece 15 through the periphery of the convex portion. By supplying to the source 100, the plasma processing apparatus It is possible to generate plasma (see 101 in FIGS. 7C to 7D) in the gap between the plasma source 100 and the workpiece portion of the Si substrate used as the workpiece 15.

  At this time, in order to cool the plasma source 100, the cooling water can be supplied to and discharged from the constant temperature water circulation device 18 through the water supply pipe 5a and the drain pipe 5b.

  Further, as shown in the enlarged view of FIG. 9B, the distance formed between the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a of the first laminated member 1, that is, the workpiece 15 is the longest. As an example, a conductor layer 21 made of Ni having a thickness of about 1 μm is provided on the approaching surface. Thus, instead of the insulating layer of the plasma source 100 of the first embodiment, the reason why the conductor layer 21 is provided in the plasma source 100 of the second embodiment is that the resistance to the gas used as the reaction gas (etching resistance), In consideration of adhesion to the base and ease of film formation, the conductor layer 21 is provided on the electrode surface as an example of a metal film.

Using such a plasma processing apparatus, first, as an example, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the target The distance R between the workpieces of the Si substrate used as the processed material 15 is set to 300 μm by the interelectrode gap adjusting device 20, and 10 sccm of He and 0.5 sccm of CF ₄ are supplied from the first gas supply device 16a. The second gas supply device supplies the first gas flow path 9 as an example of the first gas (discharge gas), injects the first gas from the first gas outlet 12a on the first gas ejection surface, and From 16b, 30 sccm of O ₂ is supplied to the eleventh gas channel 10 as an example of the second gas (discharge suppression gas), and the first gas ejection surface from the second gas ejection port 12a through the periphery of the convex portion. 1a-1 and treatment The high frequency power of 12 W is supplied from the high frequency power supply 17 to the plasma source 100 while being ejected toward the periphery of the space between the workpiece 15 and the workpiece, and the front end surface of the plasma source 100 of the plasma processing apparatus (the first surface) Plasma is generated in the gap between the first gas ejection surface 1 a-1) having the opening of the one gas ejection port 12 a and the workpiece portion of the Si substrate used as the workpiece 15. The processed portion of the used Si substrate was subjected to a plasma treatment for 700 s to form an etching groove 15a in the processed portion. At the same time, as an example, the plasma source 100 of the plasma processing apparatus was moved by the interelectrode gap adjusting apparatus 20 in the y direction in FIG. 9A at a speed of 60 μm / min. FIG. 10 shows an example of the etching shape of the processed portion of the workpiece 15 of the Si substrate in the second embodiment.

  From FIG. 10, for example, the etching depth Y = 688 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 1120 μm of the upper end of the etching groove 15a, and the line width X2 = 890 μm of the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 74.4 °. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the improvement in verticality and the avoidance of etching stop can be realized in this way is the same as the three reasons of the first embodiment.

  As mentioned above, according to the said 2nd Embodiment, there can exist an effect similar to the said 1st Embodiment.

(Third embodiment)
Hereinafter, a third embodiment of the present invention will be described with reference to FIGS. 7A and 10. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that the second gas is not used.

The plasma processing is performed by using the plasma processing apparatus of FIG. 7A, and as an example, as an example, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a- having the opening of the first gas ejection port 12a). 1) and the distance R between the processed portion of the Si substrate used as the workpiece 15 is 300 μm, and 9 sccm of He and 0.4 sccm of CF ₄ are supplied from the first gas supply device 16a. The high-frequency power of 12 W is supplied from the high-frequency power source 17 to the plasma source 100 while being supplied to the gas flow path 9 as an example of the first gas and injecting the first gas from the first gas outlet 12a of the first gas ejection surface. The tip surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the workpiece portion of the Si substrate used as the workpiece 15 During this time, plasma was generated, and the Si substrate used as the workpiece 15 was subjected to a plasma treatment for 700 s to form an etching groove 15a in the workpiece. At the same time, as an example, the plasma source 100 of the plasma processing apparatus was moved by the interelectrode gap adjusting apparatus 20 in the y direction in FIG. 7A at a speed of 60 μm / min. FIG. 10 shows an example of the etching shape of the processed part of the workpiece 15 of the Si substrate in the third embodiment.

  As shown in FIG. 10, for example, the etching depth Y = 653 μm of the etching groove 15a that is the workpiece, the line width X1 = 1370 μm at the upper end of the etching groove 15a, and the line width X2 = 870 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 57.5 °. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the verticality can be improved and the etching stop can be avoided is the same as the first and second reasons of the first embodiment.

  As described above, according to the third embodiment, as in the first embodiment, the plasma source 100 is provided with the convex portion that is small enough to be inserted into the microfabricated portion, and as the etching progresses. Even if the position of the bottom of the micro-processed portion of the workpiece 15 changes, the inter-electrode gap adjusting device 20 is configured to insert the convex portion into the micro-processed portion, so that the plasma source 100 and the workpiece 15 It becomes possible to keep the distance formed by the bottom part substantially constant, and it is possible to realize a plasma processing apparatus and method in which etching in the depth direction is difficult to stop in a desired finely processed part. Therefore, an etching shape with good perpendicularity can be obtained in a desired microfabricated portion having a depth of several hundred nm to several hundred μm, and plasma processing can be performed without stopping etching in the depth direction. it can.

  Moreover, since each opening cross-sectional area of the 1st gas ejection opening 12a was made smaller than the space cross-sectional area of 1st buffer layer 13a-a parallel to the cross-sectional area, 1st gas which has the 1st gas ejection opening 12a It becomes possible to make the gas ejection in the ejection surface 1a-1 more uniform, and it is possible to generate uniform plasma in the first gas ejection surface 1a-1. As a result, plasma processing can be performed without forming an unnecessarily tapered shape at the bottom of the workpiece 15, so that verticality can be obtained in a desired microfabricated portion having a depth of the order of several hundred nm to several hundred μm. A good etching shape can be obtained, and plasma treatment can be performed without stopping etching in the depth direction. In addition, since the second gas is not used, the number of steps at the time of creating the plasma source (the number of steps for creating a passage for the second gas and the like) is reduced, and the cost and delivery time for the creation can be shortened.

(Fourth embodiment)
Hereinafter, a fourth embodiment of the present invention will be described with reference to FIGS. 7A, 10, and 11. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that the shape of the first laminated member 1 is changed. That is, the planar shape of the first laminated member 1 that is square is changed to a rectangle.

  FIG. 11 shows a view corresponding to an enlarged plan view of the plasma source 100 of FIG. 1 of the first embodiment, and the cross-sectional view along the AA-AA plane of FIG. 11 is substantially the same as that shown in FIG. is there. However, as an example, the width T of the rectangular plane of the first laminated member 1 is 400 μm, and the width U is 800 μm.

The plasma processing is performed by using the plasma processing apparatus of FIG. 7A, and as an example, as an example, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a- having the opening of the first gas ejection port 12a). 1) and the distance R between the processed portion of the Si substrate used as the workpiece 15 are adjusted to 300 μm by the inter-electrode gap adjusting device 20, and 10 sccm of He and 0. 5 sccm of CF ₄ is supplied to the first gas flow path 9 as an example of the first gas, and the second gas is supplied while the first gas is ejected from the first gas outlet 12a of the first gas ejection surface. 30 sccm of O ₂ is supplied as an example of the second gas from the device 16b to the eleventh gas flow path 10, and the first gas ejection surface and the workpiece 15 are passed from the second gas ejection port 12a through the periphery of the convex portion. With the workpiece A high-frequency power of 12 W is supplied from the high-frequency power source 17 to the plasma source 100 while being ejected toward the periphery of the space between them, and the tip surface of the plasma source 100 of the plasma processing apparatus (the opening of the first gas ejection port 12a) Plasma is generated in a gap between the first gas ejection surface 1a-1) having the above and a workpiece portion of the Si substrate used as the workpiece 15, and the workpiece portion of the Si substrate used as the workpiece 15 An etching groove portion 15a was formed by performing a plasma treatment for 700 seconds.

  At the same time, as an example, the plasma source 100 of the plasma processing apparatus was moved by the interelectrode gap adjusting apparatus 20 in the y direction in FIG. 7A at a speed of 60 μm / min. FIG. 10 shows a summary of the etching shape of the Si substrate in the fourth embodiment. The etching shape was calculated from a cross-sectional view of a plane parallel to the BB-BB plane in FIG.

  From FIG. 10, for example, the etching depth Y = 655 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 652 μm at the upper end of the etching groove 15a, and the line width X2 = 502 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 79.2 °. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the improvement in verticality and the avoidance of etching stop can be realized in this way is the same as the three reasons of the first embodiment.

  As described above, according to the fourth embodiment, by changing the planar shape of the first laminated member 1 that is a square to a rectangle, for example, when forming a linear etching groove, the time required for the formation is shortened. And productivity can be improved. This is because the etching range can be expanded by increasing the size from square to rectangular, and the etching rate generally decreases when the scanning speed is increased, so the etching rate is the highest in the stationary state, so the size is increased. This is because the scanning speed can be improved.

(Fifth embodiment)
Hereinafter, a fifth embodiment of the present invention will be described with reference to FIGS. 7A, 10, and 12. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that the first laminated member 1, in other words, the shape of the convex portion is changed from a prismatic body to a cylindrical body. By changing the shape of the convex portion to a cylindrical shape in this way, there is an advantage that the concentration of the electric field can be relieved locally and the transition to arc discharge can be suppressed because there are fewer corner portions compared to the prismatic shape. .

  FIG. 12 shows a plan view of the plasma source of the third embodiment corresponding to the plan view of the plasma source of the plasma processing apparatus of FIG. 1 of the first embodiment, and a sectional view in the AA-AA plane of FIG. Is the same as shown in FIG. However, as an example, the convex portion has a circular shape with a diameter V of 800 μm.

The plasma processing is performed by using the plasma processing apparatus of FIG. 7A, and as an example, as an example, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a- having the opening of the first gas ejection port 12a). 1) and the distance R between the processed portion of the Si substrate used as the workpiece 15 are adjusted to 300 μm by the inter-electrode gap adjusting device 20, and 10 sccm of He and 0. 5 sccm of CF ₄ is supplied to the first gas flow path 9 as an example of the first gas, the first gas is ejected from the first gas outlet 12a of the first gas ejection surface, and the second gas supply device 30 sccm of O ₂ from 16 b is supplied to the eleventh gas flow path 10 as an example of the second gas, and from the second gas outlet 12 a through the periphery of the convex portion, the first gas ejection surface and the workpiece 15 Clearance with workpiece A high frequency power of 12 W is supplied from the high frequency power supply 17 to the plasma source 100 while being ejected toward the periphery of the space, and the front end surface of the plasma source 100 of the plasma processing apparatus (the opening of the first gas outlet 12a is opened). Plasma 101 is generated in a gap between the first gas ejection surface 1 a-1) and the workpiece portion of the Si substrate used as the workpiece 15, and the workpiece portion of the Si substrate used as the workpiece 15 Was subjected to a plasma treatment for 700 s to form an etching groove 15a in the processed portion. At the same time, as an example, the plasma source 100 of the plasma processing apparatus was moved by the interelectrode gap adjusting apparatus 20 in the y direction in FIG. 7A at a speed of 60 μm / min. FIG. 10 shows a summary of an example of the etching shape of the workpiece 15 of the Si substrate in the fifth embodiment.

  From FIG. 10, for example, the etching depth Y = 662 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 999 μm at the upper end of the etching groove 15a, and the line width X2 = 859 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 80.0 °. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the improvement in verticality and the avoidance of etching stop can be realized in this way is the same as the three reasons of the first embodiment.

  As described above, according to the fifth embodiment, in addition to the function and effect of the first embodiment, the first laminated member 1, in other words, the shape of the convex portion is configured by a cylindrical body. In comparison, since there are few corners, the concentration of the electric field can be relaxed locally, and the transition to arc discharge can be suppressed. In addition, it is easy to improve the in-plane uniformity of the etching groove.

(Sixth embodiment)
Hereinafter, a sixth embodiment of the present invention will be described with reference to FIGS. 10 and 13A. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that the counter electrode 22 is installed on the back surface of the workpiece 15, the conducting wire 6 of the plasma source 100 of the plasma processing apparatus is set to the ground potential, and the high frequency power source 17 is connected to the counter electrode 22. It is. Thus, by applying a high frequency to the counter electrode 22, there is an advantage that the connection from the high frequency power source 17 to the counter electrode 22 becomes easy. Further, when the plasma source 100 is moved while applying high frequency power, if the high frequency power supply 17 is connected to the plasma source 100, the power cable may be disconnected, bent, or entangled with other cables. There is a danger of short circuiting or heat generation. However, when the high-frequency power source 17 is connected to the counter electrode 22, the substrate electrode can be always fixed by, for example, increasing the area thereof, so that the above-described danger can be avoided. There is.

FIG. 13A is a schematic diagram when a Si substrate used as the workpiece 15 is processed using the plasma processing apparatus. As shown in FIG. 13A, for example, 0.5 sccm of He as an inert gas and CF ₄ as a reactive gas is supplied from the first gas supply device 16a through the first gas pipe 4a to supply the first gas. The second gas is supplied with O ₂ as a discharge suppression gas from the second gas supply device 16b through the second gas pipe 4b while injecting the first gas from the first gas outlet 12a on the ejection surface. High-frequency power is supplied from the high-frequency power source 17 while being ejected from the ejection port 12a toward the periphery of the space between the first gas ejection surface 1a-1 and the processed portion of the workpiece 15 through the periphery of the convex portion. By supplying, it is possible to generate plasma in the gap between the plasma processing apparatus and the processed portion of the Si substrate used as the workpiece 15. At this time, in order to cool the plasma source, the cooling water can be supplied and drained from the constant temperature water circulating device 18 through the water supply pipe 5a and the drain pipe 5b. Moreover, as shown in the enlarged view of FIG. 13B, the first gas ejection surface 1 a-1 having the opening of the first gas ejection port 12 a of the first laminated member 1, that is, the surface facing the object 15 to be processed As an example, an insulating layer 60 made of SiOx having a thickness of about 5 μm is provided. Here, the reason for providing the insulating layer 60 is as follows. Atmospheric pressure plasma is characterized in that it has a higher discharge starting voltage and is more likely to shift to arc discharge than plasma generated under reduced pressure. In general, in order to suppress the transition to arc discharge, an insulating layer is often provided on the electrode surface exposed to plasma. In this embodiment, the first gas ejection surface 1a-1 having a convex gas ejection port is provided. An SiO ₂ film is provided as an example of the insulating layer 60. However, a metal film may be provided on the electrode surface from the viewpoints of resistance to etching gas (etching resistance), adhesion to the base, and ease of film formation. In the second embodiment, the conductor layer 60 is formed on the first gas ejection surface 1a-1 having a convex gas ejection port in consideration of resistance to fluorine element, adhesion with Si, and film formation. As an example, a Ni film is provided.

As an example using such a plasma processing apparatus, first, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the target The distance R between the workpieces of the Si substrate used as the processed material 15 is adjusted to 300 μm by the inter-electrode gap adjusting device 20, and 10 sccm of He and 0.5 sccm of CF ₄ from the first gas supply device 16a. Is supplied to the first gas passage 9 as an example of the first gas, the first gas is ejected from the first gas outlet 12a on the first gas ejection surface, and 30 sccm from the second gas supply device 16b. O ₂ is supplied to the eleventh gas flow path 10 as an example of the second gas, and the first gas ejection surface 1a-1 and the object to be processed 15 are covered from the second gas ejection port 12a through the periphery of the convex portion. Clearance between the processing part The high-frequency power of 17 W is supplied from the high-frequency power source 17 to the plasma source 100 while being ejected toward the periphery of the plasma source 100, and the front end surface of the plasma source 100 of the plasma processing apparatus (having the opening of the first gas ejection port 12a). Plasma is generated in a gap between the first gas ejection surface 1a-1) and the processed portion of the Si substrate used as the workpiece 15, and the Si substrate used as the processed workpiece 15 is processed. A plasma treatment for 700 s was performed to form an etching groove 15a. At the same time, as an example, the plasma source 100 of the plasma processing apparatus was moved by the interelectrode gap adjusting apparatus 20 in the y direction in FIG. 7A at a speed of 60 μm / min. FIG. 10 shows a summary of an example of the etching shape of the workpiece 15 of the Si substrate in the sixth embodiment.

  From FIG. 10, for example, the etching depth Y = 620 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 1050 μm at the upper end of the etching groove 15a, and the line width X2 = 762 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 68.8 °. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  Thus, it is considered that there are the following three reasons why the verticality can be improved and the etching stop can be avoided.

  The first reason is that the distance R between the workpiece 15 and the plasma source 100 of the plasma processing apparatus can be kept constant to some extent as the etching progresses. As the distance R between the workpiece 15 and the plasma source 100 of the plasma processing apparatus increases, the discharge start voltage increases, and as explained by Paschen's law, it becomes difficult to maintain the generation of plasma, and the etching rate is increased. Invite a stop.

  Second, the surface of the plasma source 100 of the plasma processing apparatus that faces the object 15 has a convex shape. As a result, plasma can be generated only between the tip of the convex portion of the plasma source 100 of the plasma processing apparatus and the object 15 to be processed, and the side wall of the etching groove 15a of the object 15 is etched more than necessary. You can avoid that.

Third, the second gas is supplied along the side surface of the convex portion of the plasma source 100 of the plasma processing apparatus. Thereby, generation of plasma on the side wall of the etching groove 15a of the workpiece 15 can be avoided, and even if plasma is generated on the side wall of the etching groove 15a, Si on the side wall is removed by etching due to the presence of O ₂ gas. The rate at which Si is oxidized can be made larger than the rate at which it is produced.

  As described above, according to the sixth embodiment, in addition to the function and effect of the first embodiment, the conducting wire 6 of the plasma source 100 of the plasma processing apparatus is set to the ground potential, and the high frequency power source 17 is connected to the counter electrode 22 to face it. By applying a high frequency to the electrode 22, there is an advantage that the connection from the high frequency power supply 17 to the counter electrode 22 becomes easy. In addition, since the high-frequency power source 17 can be connected to the plasma source 100 and the counter electrode 22 can be always fixed, even when the plasma source 100 is moved while high-frequency power is applied, the power cable is disconnected or bent. In addition, it is possible to reliably avoid a danger that the cable is short-circuited or generates heat due to entanglement with other cables.

(Seventh embodiment)
Hereinafter, a seventh embodiment of the present invention will be described with reference to FIGS. 7A, 10, and 14. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that the plasma source 100 of the plasma processing apparatus is not moved in the y direction while performing plasma processing (in other words, the plasma processing is performed and the plasma source 100 of the plasma processing apparatus 100 is moved in the y direction). However, the plasma processing and the plasma source 100 of the plasma processing apparatus are alternately moved in the y direction. This process is illustrated in FIG.

  FIG. 14 shows, as an example, plasma processing is performed on the workpiece 15 for 100 s in step S1, temporarily stops the supply of high-frequency power, and the plasma source 100 of the plasma processing apparatus is applied to the workpiece 15 in step S2. It is shown that the process of moving by 100 μm toward the gap adjustment device 20 between the electrodes is one turn, and the process of multiple turns is repeated.

The plasma processing is performed by using the plasma processing apparatus of FIG. 7A, and as an example, as an example, the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a- having the opening of the first gas ejection port 12a). 1) and the distance R between the processed portion of the Si substrate used as the workpiece 15 is set to 300 μm, and 10 sccm of He and 0.5 sccm of CF ₄ are supplied from the first gas supply device 16 a to the first gas. The first gas is supplied to the flow path 9 as an example, and the first gas is injected from the first gas outlet 12a on the first gas ejection surface, and 30 sccm of O ₂ is supplied from the second gas supply device 16b. 11 The gas channel 10 is supplied as an example of the second gas, and the gap between the first gas ejection surface 1a-1 and the workpiece of the workpiece 15 passes through the periphery of the convex portion from the second gas ejection port 12a. Spouts around the space Then, a high frequency power of 12 W is supplied from the high frequency power supply 17 to the plasma source 100, and the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a having the opening of the first gas ejection port 12a). -1) and plasma are generated in the gap between the workpiece of the Si substrate used as the workpiece 15 and the plasma treatment for 100 s is performed on the workpiece of the Si substrate used as the workpiece 15. As a result, an etching groove 15a was formed. Thereafter, as an example, the supply of power from the high-frequency power source 17 to the plasma processing apparatus was temporarily stopped, and the plasma source 100 of the plasma processing apparatus was moved by 100 μm in the y direction of FIG. With this as one turn, the same process was repeated for a total of 6 turns, and finally the seventh plasma treatment was performed on the work portion of the Si substrate for 100 s to form the etching groove 15a. FIG. 10 shows a summary of the etching shape of the processed portion of the Si substrate in the seventh embodiment.

  From FIG. 10, for example, the etching depth Y = 603 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 930 μm at the upper end of the etching groove 15a, and the line width X2 = 840 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 82.9 °. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the improvement in verticality and the avoidance of etching stop can be realized in this way is the same as the three reasons of the first embodiment.

  As described above, according to the seventh embodiment, the plasma processing and the plasma source 100 of the plasma processing apparatus are alternately moved in the y direction. There is an advantage that the by-product gas that tends to stay in the space between the 15 workpieces is sufficiently discharged, the gas atmosphere is easily maintained, and arc discharge is less likely to occur.

(Eighth embodiment)
Hereinafter, an eighth embodiment of the present invention will be described with reference to FIGS. 10 and 15. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that not only the plasma source 100 of the plasma processing apparatus is moved in the y direction by the interelectrode gap adjusting device 20, but also in the x direction orthogonal to the y direction. This is that the plasma processing was performed while moving the moving mechanism 23.

  The moving mechanism 23 can be configured by the upper xz stage 121 of FIGS. 7D to 7F under the control of the control device 110, for example.

FIG. 15 is a schematic diagram showing the eighth embodiment. The same plasma processing apparatus as that in the fourth embodiment was used. First, as an example, the tip surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and the Si substrate used as the workpiece 15 are covered. The distance R between the processing parts is adjusted to 300 μm by the inter-electrode gap adjusting device 20, and 10 sccm of He and 0.5 sccm of CF ₄ are supplied to the first gas flow path 9 from the first gas supply device 16 a. As an example of the first gas, the first gas is ejected from the first gas outlet 12a on the first gas ejection surface, and 30 sccm of O ₂ is supplied from the second gas supply device 16b to the eleventh gas flow path. 10 is supplied as an example of the second gas, and passes through the periphery of the convex portion from the second gas ejection port 12a to the periphery of the space of the gap between the first gas ejection surface 1a-1 and the workpiece to be processed 15 High lap while spouting towards A high frequency power of 12 W is supplied from the power source 17 to the plasma source 100, and the front end surface of the plasma source 100 of the plasma processing apparatus (the first gas ejection surface 1a-1 having the opening of the first gas ejection port 12a) and Plasma is generated in a gap between the workpiece of the Si substrate used as the workpiece 15 and the plasma source 100 of the plasma processing apparatus is moved to the upper xz stage at a speed of 480 μm / min in the x direction of FIG. While scanning by 121, the processed portion of the Si substrate used as the workpiece 15 was subjected to plasma treatment for 600 seconds to form the etching groove portion 15a. Thereafter, as an example, the supply of power from the high-frequency power source 17 to the plasma source 100 of the plasma processing apparatus is temporarily stopped, and the plasma source 100 of the plasma processing apparatus is moved to 100 μm in the y direction of FIG. Moved.

  After that, power is again supplied from the high frequency power source 17 to the plasma source 100 of the plasma processing apparatus, and plasma is generated in the gap between the plasma source 100 of the plasma processing apparatus and the processed portion of the Si substrate used as the workpiece 15. The Si source used as the object to be processed 15 while the plasma source 100 of the plasma processing apparatus is scanned by the upper xz stage 121 at a speed of 480 μm / min in the −x direction of FIG. An etching groove portion 15a was formed by performing a plasma treatment for 600 s on the processed portion of the substrate. With this as one turn, the same process was repeated nine turns in total. FIG. 10 shows a summary of the etching shapes of the Si substrate in the eighth embodiment.

  From FIG. 10, for example, the etching depth Y = 760 μm of the etching groove 15a, which is the part to be processed, the line width X1 = 952 μm at the upper end of the etching groove 15a, and the line width X2 = 902 μm at the bottom of the etching groove 15a. The angle α representing the perpendicularity of the shape of the etching groove 15a was 86.9 °. The thickness of the Si substrate used as the workpiece 15 is 760 μm. Accordingly, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the improvement in verticality and the avoidance of etching stop can be realized in this way is the same as the three reasons of the first embodiment.

  According to the eighth embodiment, not only the plasma source 100 of the plasma processing apparatus is moved in the y direction by the inter-electrode gap adjusting device 20, but the plasma source 100 of the plasma processing apparatus is also moved in the x direction orthogonal to the y direction. Since the plasma processing is performed while being moved by the moving mechanism 23, not only the etching groove portion 15a is formed linearly, but also the etching groove portion 15a wider than the etching groove portion 15a is etched to form a recess. Can do. In addition, by changing the depth of the etching groove along the x direction, a shape having a tapered portion in the y direction can be formed as another example of the etching groove.

(Ninth embodiment)
The ninth embodiment of the present invention will be described below with reference to FIG. Since the configuration of the plasma processing apparatus is basically the same as that shown in FIGS. 1 to 6, only differences from the plasma processing apparatus used in the first embodiment will be described here.

  The difference from the first embodiment is that, as shown in FIG. 22, the formation surface of the gas ejection port 12a provided in the second laminated member 2 is inclined by an angle ε = 30 ° with respect to the y axis. Further, as the processing progresses, the control operation of the control device 110 controls the supply operation of the first gas supply device 16a and the second gas supply device 16b to change the flow rate of the second gas with respect to the first gas. It is a point.

Using such a plasma processing apparatus, first, a gap distance R between the plasma source 100 of the plasma processing apparatus and a processed portion of the Si substrate used as an example of the processing object 15 is set to the inter-electrode gap adjusting apparatus. 20 to 300 μm, 10 sccm of He and 0.5 sccm of CF ₄ are supplied from the first gas supply device 16 a to the first gas flow path 9 as an example of the first gas, and the first gas ejection surface is While the first gas is injected from the gas outlet 12a, 30 sccm of O ₂ is supplied from the second gas supply device 16b to the eleventh gas flow path 10 as an example of the second gas, and the second gas outlet 12a From the first laminated member 1 through the entire circumference of the first gas jetting surface 1a-1 and reaching the periphery of the space between the processed portion of the workpiece 15, From high frequency power supply 17 A high-frequency power of 12 W is supplied to the plasma source 100, and is a space to which the first gas is supplied and a front end surface of the plasma source 100 of the plasma processing apparatus (the first gas jet opening 12a having the opening). Plasma is generated in a space that is a gap between the 1 gas ejection surface 1a-1) and the processed portion of the Si substrate used as the workpiece 15, and the processed portion of the Si substrate used as the processed workpiece 15 is generated. On the other hand, it was possible to form an etching groove 15a in the processed portion by performing plasma treatment.

Further, under the control of the control device 110, the plasma source 100 of the plasma processing device is moved by the inter-electrode gap adjusting device 20 in the y direction in FIG. By controlling the supply operation of the two gas supply device 16b, the flow rate of O ₂ gas ejected from the second gas ejection port 12b is reduced at a rate of 2.3 / min as an example, and the plasma treatment for 700 s is performed on the Si substrate. An etching groove 15a was formed in the processed portion by applying to the processed portion. As an example, the O ₂ gas supplied at the start of plasma processing is set to 30 sccm, and the flow rate of O ₂ gas supplied after 700 s is set to about 3 sccm.

  By the above method, in the microfabrication with a depth of the order of several hundred μm, the perpendicularity of the etching shape of the etching groove 15a is improved, and the plasma processing can be performed without stopping the etching in the middle of the processing.

  The reason why the improvement in verticality and the avoidance of etching stop can be realized in this way is the same as the three reasons of the first embodiment. Although only the case where the angle ε with respect to the y-axis of the gas outlet 12a provided in the second laminated member 2 is 30 ° has been described, the angle ε is preferably approximately 0 ° to 65 °. If the angle is less than 0 °, the second gas cannot be efficiently supplied to the workpiece. If the angle is greater than 65 °, the second gas collides with the side surface of the first laminated member 1 to generate a turbulent flow. This is because the two gases cannot be efficiently supplied to the workpiece.

  As described above, according to the ninth embodiment, the formation surface of the gas ejection port 12a provided in the second laminated member 2 is inclined by the angle ε = 30 ° with respect to the y axis. The second gas can be efficiently supplied to the workpiece without colliding with the side surface of 1 and generating turbulent flow. In other words, if the angle with respect to the y-axis is larger than 30 °, processing during the creation of the plasma source becomes difficult. Conversely, if the angle with respect to the y-axis is smaller than 30 °, turbulence is likely to occur. Therefore, the angle with respect to the y-axis is preferably about 30 °. Further, according to the ninth embodiment, as the processing progresses, the control operation of the control device 110 controls the supply operation of the first gas supply device 16a and the second gas supply device 16b, and the first gas is supplied to the first gas. Since the flow rate of the second gas is changed, it is difficult for the second gas to be mixed into the space between the front end surface of the plasma source and the processed portion of the workpiece 15, thereby suppressing a decrease in plasma density. And the etching rate can be increased. Further, the second gas can be used efficiently, and the running cost can be suppressed.

  In the various embodiments of the present invention described above, the case where plasma is generated using high frequency power of 13.56 MHz is exemplified. However, plasma is generated using high frequency power from several hundred kHz to several GHz. Is possible. Alternatively, DC power may be used, or pulse power may be supplied. When pulse power is used, by supplying positive and negative pulses alternately, it becomes possible to eliminate the electrification of the dielectric and continuously generate discharge. In addition, since the pulse does not need to have an effect of preventing arc discharge (spark), it is not necessary to be a very high-speed pulse, and may be several tens to several hundreds Hz, but of course, several kHz to several MHz. If it is high-speed, it becomes possible to prevent arc discharge (spark) more effectively.

  In the various embodiments, the input power is indicated by the power value. However, the start of discharge is generally determined by the voltage. The input voltage is preferably 100 V or more and 100 kV or less. If the input voltage is less than 100V, the discharge may not start. When the input voltage exceeds 100 kV, arc discharge (spark) may occur. More preferably, the voltage is 1 kV or more and 10 kV or less. If the input voltage is less than 1 kV, the discharge may not start. When the input voltage exceeds 10 kV, arc discharge (spark) may occur.

  Further, in the various embodiments, the movement in the x direction or the movement in the y direction is described only for the case where the movement is performed by the plasma source 100 and the plasma processing apparatus. The distance and relative position between the processing apparatus and the processing apparatus may be changed.

In the various embodiments described above, only the case where Si is used as the material of the layer forming the pattern is described, but a material having a volume resistivity of 10 ⁻¹ Ω · cm or less is desirable. When the volume resistivity exceeds 10 ⁻¹ Ω · cm, power loss at a place other than the desired load increases, and unnecessary heat may be generated or it may be difficult to match the desired load. Therefore, it is desirable to be a part of a semiconductor or a metal material.

  Moreover, the example which changes the material which coats the surface which has a 1st gas jet nozzle, the example which changes the shape of a lamination | stacking member, the example which changes the electrode which ignites electric power, the production | generation of a plasma, and the movement of a plasma processing apparatus are alternated By using a combination of several apparatuses or methods shown in the various embodiments, such as an example, an etching shape with better verticality can be obtained, and without stopping etching in the depth direction, Plasma treatment is possible.

  In the various embodiments, only the example using SiOx and Ni is described as the material used for coating the first gas ejection surface 1a-1 having the first gas ejection port. It is preferable that the etching resistance to the jetting reaction gas is better than the material of the layer forming the pattern therein. When a material with low etching resistance is used, the number of plasma active species that reach the object to be processed may be reduced, the processing speed may be reduced, or the maintenance cycle of the plasma source may be shortened. Therefore, when the material of the layer forming the pattern is Si, at least one of Ag, Al, Au, Co, Cr, Cu, Fe, Mg, Mo, Ni, Pt, Si, Ti, Ta, and W is used. By using a metal material as a main component or an insulating material made of an oxide, nitride, or fluoride containing these elements, it is possible to obtain the same effects as those of the various embodiments of the present invention. It is.

  In the various embodiments, as an example, only the example in which the opening lengths of the first gas outlet and the second gas outlet are Φ30 μm is described, but the opening length is preferably approximately 200 nm to 50 μm. . As for the opening length of the first gas outlet and the second gas outlet, the smaller the opening length, the better the in-plane gas uniformity, and the easier the plasma becomes, or the occurrence of arc discharge (spark) is suppressed. Smaller is better because it is easier to do. In general machining, machining of about 50 μm is the limit, and it is difficult to realize a complicated configuration as in various embodiments of the present invention. In addition, when the opening length is less than 200 nm, even when a vacuum dry etching technique or a laser processing technique is used for manufacturing the plasma source, it becomes difficult to process the plasma source, and the processing cost increases. Therefore, approximately 200 nm to 50 μm is desirable.

Further, in the various embodiments, as an example, the gas ejected from the first gas ejection port is described only as an example of He which is an inert gas and CF ₄ which is a reactive gas, but is not limited to He, Ar 80% or more of an inert gas such as Kr, Ne, or Xe, and not only CF ₄ but also CxFy such as SF ₆ or C ₄ F ₈ (x and y are natural numbers), NF ₃ , It is desirable to contain a halogen-containing gas such as Cl ₂ or HBr, or a reactive gas such as N ₂ or O ₂ . When the inert gas is 80% or less, arc discharge (spark) is likely to occur, and the surface to be processed may be oxidized, and a desired plasma treatment may not be performed. In addition, if a reactive gas suitable for an object to be processed is not contained, a desired plasma treatment may not be performed.

Further, in the various embodiments, the gas jetted from the second gas jetting port is O ₂ , and only the example in which oxidation of the side wall of the surface to be processed is intended is described, but not limited to O ₂ , The gas can be selected according to the content of the reform in the prospect. For example, N ₂ or air may be used for nitriding, or CxFy (x and y are natural numbers) such as SF ₆ or CF ₄ , NF ₃ , or fluorine-containing gas is used for fluorination. May be.

  In the various embodiments, only examples of the etching process are described, but the present invention can be used for various plasma processes without being limited to the etching. For example, the present invention can be applied to surface treatment and doping such as water repellency, hydrophilicity, oxidation, reduction, fluorination, or nitridation, or thin film deposition such as CVD or sputtering.

  It is to be noted that, by appropriately combining any of the various embodiments, the effects possessed by them can be produced.

  According to the plasma processing apparatus and method of the present invention, an etching shape with good perpendicularity can be obtained in a desired microfabricated portion having a depth of the order of several hundred nm to several hundred μm, and etching in the depth direction can be performed. Plasma treatment can be performed without stopping. Therefore, it can be used especially for etching of MEMS (Micro Electro Mechanical System) devices and the like, but it can also be widely applied as a component for generating plasma and performing surface modification, thin film deposition, etching, and the like. It can be used for manufacturing semiconductors, liquid crystals, displays such as FED (Field Emission Display), PDP, electronic components, and printed circuit boards.

  Although the present invention has been fully described in connection with preferred embodiments with reference to the accompanying drawings, various variations and modifications will be apparent to those skilled in the art. Such changes and modifications are to be understood as being included therein, so long as they do not depart from the scope of the present invention according to the appended claims.

These and other objects and features of the invention will become apparent from the following description taken in conjunction with the preferred embodiments with reference to the accompanying drawings.
FIG. 1 is an external configuration diagram of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 2A is an enlarged plan view of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 2B is an enlarged plan view of the plasma source of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 2C is an enlarged plan view of the front end surface of the plasma source of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 3 is a cross-sectional view of an external configuration diagram of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 4 is a cross-sectional view of the first laminated member in the plasma processing apparatus used in the first embodiment of the present invention. FIG. 5 is a cross-sectional view of the second laminated member in the plasma processing apparatus used in the first embodiment of the present invention. FIG. 6 is a cross-sectional view of a third laminated member in the plasma processing apparatus used in the first embodiment of the present invention. FIG. 7A is a schematic view of a plasma processing apparatus used in the first, third, fourth, fifth and seventh embodiments of the present invention. FIG. 7B is a partially enlarged cross-sectional view of the plasma source of the plasma processing apparatus used in the first, third, fourth, fifth and seventh embodiments of the present invention. FIG. 7C is a cross-sectional view of a state in which plasma is generated between a plasma source and a workpiece to be processed by the plasma processing apparatus used in the first, third, fourth, fifth, and seventh embodiments of the present invention. FIG. 7D shows a state in which etching is performed by generating plasma between the plasma source of the plasma processing apparatus used in the first, third, fourth, fifth and seventh embodiments of the present invention and the processed portion of the workpiece. It is sectional drawing. FIG. 7E is an explanatory diagram showing an inter-electrode gap adjusting device as a specific example of the inter-electrode gap adjusting device of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 7F is an explanatory diagram showing an inter-electrode gap adjusting device as another specific example of the inter-electrode gap adjusting device of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 7G is an explanatory diagram showing an inter-electrode gap adjusting device as still another specific example of the inter-electrode gap adjusting device of the plasma processing apparatus used in the first embodiment of the present invention. FIG. 8 is a schematic diagram of an etching shape processed by the plasma processing apparatus used in the first embodiment of the present invention. FIG. 9A is an overview of the plasma processing apparatus used in the second embodiment of the present invention. FIG. 9B is a partially enlarged cross-sectional view of the plasma source of the plasma processing apparatus used in the second embodiment of the present invention. FIG. 10 is a diagram showing a list showing the shape data of the etching shape of the etching groove, which is a processed portion processed by the plasma processing apparatus used in the first to eighth embodiments of the present invention. FIG. 11 is an enlarged plan view of the plasma processing apparatus used in the fourth embodiment of the present invention. FIG. 12 is an enlarged plan view of the plasma source of the plasma processing apparatus used in the fifth embodiment of the present invention. FIG. 13A is an overview of the plasma processing apparatus used in the sixth embodiment of the present invention. FIG. 13B is a partially enlarged cross-sectional view of the plasma source of the plasma processing apparatus used in the sixth exemplary embodiment of the present invention. FIG. 14 is a schematic view of the plasma processing method used in the seventh embodiment of the present invention. FIG. 15 is a schematic view of a plasma processing apparatus used in the eighth embodiment of the present invention. FIG. 16A is a schematic diagram of patterning using a resist process in the prior art. FIG. 16B is a schematic diagram of patterning processing using a resist process in the prior art. FIG. 16C is a schematic diagram of patterning processing using a resist process in the prior art. FIG. 16D is a schematic diagram of patterning processing using a resist process in the prior art. FIG. 17 is an exploded view of a plasma processing apparatus equipped with a microplasma source in the prior art. FIG. 18 is a plan view of a plasma processing apparatus equipped with a microplasma source in the prior art. FIG. 19 is a cross-sectional view of a plasma processing apparatus equipped with a microplasma source in the prior art. FIG. 20 is a schematic view of an etching shape processed by a plasma processing apparatus in the prior art. FIG. 21 is a diagram showing the dependence of the etching depth on the etching time processed by the plasma processing apparatus in the prior art. FIG. 22 is an enlarged cross-sectional view of the second laminated member in the plasma processing apparatus used in the ninth embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st laminated member 1a 1st layer 1b 2nd layer 1c 3rd layer 1d 4th layer 1a-1 1st gas ejection surface 2 2nd laminated member 3 3rd laminated member 3a layer 3b layer 4a 1st gas piping 4b 1st 2 gas piping 5a Water supply pipe 5b Drain pipe 6 Conductor 7 Insulating pipe 8 Adhesive 9 First gas flow path 9a-a Second gas flow path 9a-b Third gas flow path 9b-a Fourth gas flow path 9b- b 5th gas flow path 9c-a 6th gas flow path 9c-b 7th gas flow path 10 11th gas flow path 10b-a 12th gas flow path 10c-a 13th gas flow path 11a water path 11b water path 12a 1st 1 gas outlet 12b 2nd gas outlet 13a-a 1st buffer layer 13a-b 2nd buffer layer 13a-c 3rd buffer layer 13b-a 4th buffer layer 13b-b 5th buffer layer 15 to-be-processed object 16a First gas supply device 16b Second gas supply device 17 High-frequency power supply 18 Constant-temperature water circulation device 20 Interelectrode gap adjustment device 20A Interelectrode gap adjustment device 20B Interelectrode gap adjustment device 20C Interelectrode gap adjustment device 100 Plasma source 110 Control device 120 Interelectrode gap adjustment mechanism

Claims (17)

A first gas ejection surface having a gas flow path formed therein, an electrode whose potential can be controlled by power supply or grounding, and an opening of a first gas ejection port for ejecting a first gas for discharge A plasma source arranged parallel to the workpiece;
The first gas is connected to the first gas jet port of the plasma source, and the first gas is passed from the first gas jet port between the first gas jet surface of the plasma source and a workpiece to be processed. A first gas supply device that supplies the gap between
With
A part of the surface of the plasma source facing the object to be processed has a convex part, and the convex part has the first gas ejection surface having an opening of the first gas ejection port of the plasma source. The plasma processing apparatus, wherein the projection is formed and has a size that can be inserted into a finely processed portion of the workpiece.   2. The plasma processing apparatus according to claim 1, wherein the convex portion has a size that can be inserted into a microfabricated portion having a depth on the order of several hundred nm to several hundred μm of the workpiece. A second gas outlet is provided at a position different from the first gas ejection surface of the plasma source to eject the second gas for suppressing discharge;
The second gas is connected to the second gas ejection port and around the gap between the second gas ejection surface of the plasma source and the processed portion of the workpiece from the second gas ejection port. The plasma processing apparatus of Claim 1 or 2 further provided with the 2nd gas supply apparatus to supply.   The plasma source and the object to be processed are relatively moved so that the distance of the gap between the first gas ejection surface of the plasma source and the part to be processed of the object to be processed is maintained within a certain range. The plasma processing apparatus according to claim 1, further comprising an inter-electrode gap adjusting device.   Provided with a counter electrode capable of controlling the potential by supplying power or grounding at a position facing the surface having the opening of the first gas jet port of the plasma source and mounting the object to be processed. The plasma processing apparatus as described in any one of Claims 1-4.   The plasma source has a multilayer structure in which two or more layers having a pattern forming the gas flow path are stacked, and the gas flow path inside the multilayer structure has a space as a buffer layer. And at least one of the space cross-sectional areas of the buffer layer that is parallel to the opening cross-sectional area of the first gas outlet is larger than the opening cross-sectional area of the first gas outlet. The plasma processing apparatus as described in any one of -5.   The plasma processing apparatus according to claim 6, wherein the material of the layer forming the pattern is mainly composed of Si.   The opening length of the first gas jetting port is such that the opening shape of the first gas jetting port is a circle or an ellipse, and the diameter or the minor axis is 200 nm or more and 50 μm or less. The plasma processing apparatus as described in one.   The opening length of the first gas jetting port is such that the opening shape of the first gas jetting port is a polygon and one or more of one side or diagonal line is 200 nm or more and 50 μm or less. The plasma processing apparatus according to any one of the above.   4. The plasma processing apparatus according to claim 3, wherein the opening length of the second gas ejection port is such that the opening shape of the second gas ejection port is a circle or an ellipse, and the diameter or the minor axis is 200 nm or more and 50 μm or less.   4. The opening length of the second gas jetting port according to claim 3, wherein the opening shape of the second gas jetting port is a polygon, and one or more of one side or diagonal line is 200 nm or more and 50 μm or less. Plasma processing equipment. A first gas ejection surface having a gas flow path formed therein, an electrode whose potential can be controlled by power supply or grounding, and an opening of a first gas ejection port for ejecting a first gas for discharge The first gas is supplied from a first gas supply device to the first gas outlet of the plasma source disposed in parallel with the object to be processed, and the first gas outlet of the plasma source is supplied from the first gas outlet. While the first gas is ejected into the gap between the one gas ejection surface and the processed portion of the workpiece, the plasma source, the workpiece, or the workpiece of the workpiece is turned upside down. Power is supplied to one of the counter electrodes arranged on the surface, and plasma is generated by generating a potential difference between the plasma source and the object to be processed,
A part of a surface of the plasma source facing the object to be processed, the first gas ejection surface having an opening of the first gas ejection port of the plasma source is formed, and the object to be processed A plasma processing method for performing plasma processing on the workpiece of the workpiece while a convex portion having a size that can be inserted into the microfabricated portion of the workpiece is inserted into the workpiece of the workpiece.   When performing the plasma treatment of the workpiece of the workpiece while the projection is inserted into the workpiece of the workpiece, the projection is on the order of several hundred nm to several hundred μm of the workpiece. The plasma processing method according to claim 12, wherein plasma processing is performed on the portion to be processed of the workpiece while being inserted into a finely processed portion having a depth of 15 mm.   A second gas supply device supplies a second gas for suppressing discharge from the second gas jet port to the plasma from a second gas jet port arranged at a position different from the first gas jet surface of the plasma source. 14. The plasma processing method according to claim 12, wherein the plasma processing method is jetted around a gap between the second gas ejection surface of the source and a workpiece portion of the workpiece.   The plasma processing method according to claim 14, wherein when the second gas is jetted around the gap from the second gas jetting port, surface modification is performed on a side surface portion of the workpiece of the workpiece.   When performing the plasma treatment of the workpiece of the workpiece while the convex portion is inserted into the workpiece of the workpiece, the first gas ejection surface of the plasma source and the workpiece The plasma processing according to any one of claims 12 to 15, wherein the plasma source and the object to be processed are relatively moved so as to maintain a distance of the gap between the parts to be processed within a certain range. Method.   The plasma processing method according to any one of claims 12 to 16, wherein the plasma processing is performed at a pressure close to or higher than atmospheric pressure.

Images