JP2004055884A - Polishing liquid, surface plate, hard and brittle material, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for removing a deep hole produced on the surface of a sapphire to shorten a chemical polishing time. <P>SOLUTION: In this case, a surface plate 21 made of cast iron and a surface plate 22 made of tin are stuck. A groove 52 is formed on one surface of the surface plate 22. A lower surface plate 72 is fitted while the groove 52 is upward. An upper surface plate 71 is fitted while the groove 52 is downward. A polishing liquid is poured in between the upper and lower surface plates 71 and 72. While pouring the polishing liquid, the upper and lower surface plates 71 and 72 are turned to polish and manufacture a hard and brittle material. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a grinding fluid, a surface plate, a hard brittle material, and a method for manufacturing a hard brittle material.
[0002]
[Prior art]
Conventionally, a method of simultaneously polishing both surfaces of a hard and brittle material (hereinafter referred to as a “simultaneous polishing method on both surfaces”) has been widely used in order to produce a product with high surface accuracy. Especially in the field of optical components, since the thickness variation and flatness of the polished product are reflected in the optical characteristics, in the case of products requiring high-precision optical characteristics, products manufactured by the double-sided simultaneous polishing method must be used. I often use it a lot. Also, in the field of semiconductor substrate manufacturing, the simultaneous polishing method for both sides is used in the polishing process for the double-sided mirror surface substrate until the final process, and for the single-sided mirror surface substrate until the single-side mirror surface process is started. It is often done.
[0003]
However, when polishing a single crystal of a brittle material such as alumina or silicon carbide when polishing by a conventional double-sided simultaneous polishing method, the polishing process is generally divided into several stages. That is, a method is employed in which the surface roughness is reduced while changing the type and particle size of the abrasive. The type of the abrasive is determined by the type of the abrasive, but the hardness of the abrasive is generally slightly higher than the hardness of the abrasive. The selection of the abrasive has been made according to this concept.
[0004]
When polishing hard and brittle materials such as sapphire, as one polishing method, rough polishing and finish polishing using an abrasive mainly composed of green silicon carbide for uniformity of thickness of the polished product and correction of thickness variation Processing has been performed using a mirror polishing method using an abrasive mainly composed of colloidal silica. The processing time is, for example, about 8 hours for rough polishing on a C-plane 2 inch substrate made of sapphire material, and the mirror polishing is very long, requiring 150 to 200 hours.
[0005]
[Problems to be solved by the invention]
However, the conventional hard brittle material requires a considerable amount of time in the polishing process. In order to shorten the polishing time of the sapphire material, the polishing time was changed by changing the shape and particle size of the abrasive used for the rough polishing and the finish polishing, but no significant change was observed in the time spent. Observing the sapphire plate in the mirror state in the mirror polishing process, the surface of the sapphire becomes a polished glass state called grain after several hours from the start of mirror polishing, and when the grain completely disappears, it becomes a mirror state. It turned out to be. A fine observation of the grain during chemical polishing revealed that the inside was composed of ground glass-like holes, the depth of which often exceeded 10 microns as measured by an optical microscope. Similarly, looking at the surface after the rough polishing, holes having the same depth, which are presumed to be the cause of the grain, were observed.
[0006]
It is shown in FIG. FIG. 13A shows a surface state after the rough polishing, and shows a partially deep hole. FIG. 13 (b) shows a state in which the deep hole remains as a grain while the surface is almost mirror-finished during chemical polishing. From these results, it is found that these deep holes have a partially soft portion of sapphire material and the polishing power of green silicon carbide (GC) is low. This is thought to be due to the selective polishing in which the GC is crushed in a hard part of the sapphire material and a shallow hole is dug. Therefore, a deep hole is partially generated. Therefore, in order to shorten the chemical polishing time, a method of removing a deep hole generated on the sapphire surface becomes an issue.
[0007]
In addition, since it is well known that selective polishing is less likely to occur as the polishing agent has a higher polishing force, a method of preventing selective polishing by using abrasive particles having a high polishing force after rough polishing using GC. In polishing hard and brittle materials, a polishing method using diamond particles is generally used. However, diamond abrasives have the following problems. Diamond has a high specific gravity and immediately precipitates even in a solution containing diamond, making it difficult to produce a uniform abrasive. In addition, the diamond particles gather together in the solution to form a solid, so that the diamond particles are larger than a single particle and exist in the solution. These large particles lead to the generation of polishing scratches.
[0008]
Such polishing scratches may cause a variation in the film-forming process conditions due to a change in the crystal plane orientation due to a variation in the thickness of the substrate or a change in the flatness in a situation where a single crystal substrate of sapphire or silicon carbide has begun to be used as a substrate for a semiconductor. This causes a problem that the yield of products generated on the substrate changes.
[0009]
[Means for Solving the Problems]
The grinding fluid of the present invention has a solution containing a high-molecular-weight organic compound and an abrasive added to the solution, and the ultrasonic abrasive is applied to agitate the abrasive with respect to the solution. By applying the ultrasonic vibration, the solvent containing the high molecular organic compound and the abrasive can be sufficiently stirred.
[0010]
The polishing liquid of the present invention is an aqueous solution containing a starch-based polymer compound, and the solution is boiled. By boiling, the aqueous solution containing the polymer compound can be sufficiently stirred.
[0011]
In the grinding fluid of the present invention, the abrasive is diamond particles. The use of diamond can shorten the grinding time. Also, by mixing with a solution containing a high-molecular organic compound and an aqueous solution containing a starch-based high-molecular compound, the hard brittle material can be polished without causing deep damage.
[0012]
The surface plate of the present invention has a first surface plate serving as a base, and a second surface plate provided with a groove on one surface using a material softer than the base, A surface opposite to the one surface provided with the grooves of the second surface plate and the first surface plate are fixed.
[0013]
In the platen of the present invention, the first platen is preferably cast iron and the second platen is preferably tin.
[0014]
The hard brittle material of the present invention is obtained by polishing an arbitrary surface of the hard brittle material using the polishing liquid described above with the platen described above.
[0015]
The hard brittle material of the present invention is obtained by polishing the surface opposite to the arbitrary one surface using the polishing liquid described above with the platen described above, and simultaneously polishing the arbitrary one surface. .
[0016]
The method for producing a hard and brittle material of the present invention includes a lower platen having the surface having the groove of the surface plate described above mounted on the upper side and an upper surface plate having the surface having the groove of the surface plate described above mounted on the lower side. A step of sandwiching the lower platen and the upper platen while flowing the grinding liquid between the lower platen and the upper platen, and polishing the grinding liquid while flowing the grinding liquid. And step.
[0017]
The method for producing a hard and brittle material according to the present invention includes a step of sandwiching a carrier between the lower surface plate and the upper surface plate and polishing the carrier.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
The present invention dissolves diamond particles in an aqueous solution in which a high-viscosity high-molecular organic solvent or a starch-based organic compound is dissolved, and promotes the separation of the diamond particles in the solution by applying ultrasonic vibration for a certain period of time, thereby increasing the degree of dispersion of the diamond particles. A solution is prepared which is uniform and has a slow settling of diamond particles, and the solution is used as an abrasive.
[0019]
Next, a double surface plate was prepared by attaching a tin surface plate to a cast iron surface plate, and the tin surface plate was cut into grooves in a mountain-cut shape, and the workpiece was placed between the double surface plates placed one above the other. The workpiece is polished while flowing an abrasive. The sharpening of the double surface plate is performed using a diamond electrodeposited surface plate having the same size as the double surface plate.
[0020]
<Example 1>
Embodiments of the present invention will be described with reference to the drawings. First, the step of preparing the abrasive of the present invention will be described. In the present invention, the abrasive is roughly classified into an oil-based abrasive and a water-soluble abrasive. FIG. 1 is a process chart for preparing an oil-based abrasive of the present invention, and FIG. 2 is a process chart for preparing a water-soluble abrasive.
[0021]
In FIG. 1, first, a high molecular organic compound, a viscosity modifier and diamond particles are prepared (Step 101 to Step 103). In this embodiment, 250 ml of liquid paraffin was prepared as the high molecular organic compound, and 500 ml of olive oil was prepared as the viscosity modifier. As the diamond particles, 100 carats of particles having a center diameter of a single crystal diamond of 2 to 4 microns were prepared. The diamond particles are dissolved in the prepared liquid paraffin (Step 104), and then the solution in which the diamond particles are dissolved is subjected to ultrasonic vibration stirring at room temperature using an ultrasonic transmitter (Step 105). In this embodiment, the time for applying ultrasonic vibration to the solution was set to one and a half hours. Next, olive oil is added to the solution to adjust the viscosity (step 106). Further, the solution whose viscosity has been adjusted is stirred by ultrasonic vibration (Step 107), and the split state of the diamond particles is confirmed (Step 108).
[0022]
<Example 2>
Next, a process for preparing a water-soluble abrasive will be described. In FIG. 2, first, a food-made organic compound is dissolved in water (step 111). 200 grams of powdered starch and 10 liters of water are prepared as a food organic compound. The powdered starch is put into a beaker, and the powdered starch is dissolved in water while gradually adding water (step 112). The food-made organic compound dissolved in water is brought to the boil by heating. Turn off the heat after waiting 5 minutes after boiling. Diamond particles are prepared (Step 113), and the diamond particles are dissolved in a surfactant (Step 114). As the diamond particles, 500 carats of particles having a center diameter of a single crystal diamond of 2 to 4 microns are prepared, and as the surfactant, an aqueous solution obtained by diluting 700 ml to 10 liters of water is prepared. The diamond particles are dissolved in the prepared aqueous surfactant solution (step 115), and the solution in which the diamond particles are dissolved is stirred at room temperature by applying ultrasonic vibration using an ultrasonic transmitter (step 116). At this time, the time for applying ultrasonic vibration to the solution was set to 3 hours. Next, the surfactant aqueous solution and the food-based organic compound aqueous solution are heated (step 117). The heating temperature was 70 degrees Celsius. The two heated aqueous solutions are mixed (step 118).
[0023]
<Example 3>
Next, a method for manufacturing, adjusting, and maintaining a polishing platen used for manufacturing a hard and brittle material according to the present invention will be described. FIG. 3 is a process chart showing a method for manufacturing a polishing platen used in the present invention.
[0024]
First, a commonly used cast iron platen 21 is prepared (step 201). Here, the cast iron platen 21 is prepared by shaping the cast iron platen 21 for a 9B type double-side polishing machine to a thickness of 15 mm and processing the platen flatness to 20 μm or less. Next, a tin surface plate 22 made of tin having the same shape as the cast iron surface plate 21 is prepared (step 202). The tin platen 22 used was prepared by dissolving pure tin, putting it into a mold, and solidifying the tin to a thickness of 15 mm. Next, the cast iron platen 21 and the tin platen 22 are bonded together using an adhesive 24 (step 203). FIG. 4 shows a state where the cast iron platen 21 and the tin platen 22 are bonded together. Next, the fall prevention device 23 is attached so as to straddle the upper and lower surfaces of the bonded platen (step 204). The fall prevention device 23 has a mounting hole 23a for fixing the upper surface plate and a bent portion 23b for fixing the lower surface plate, and the entire shape is L-shaped. The bent portion 23b is inserted into the mounting groove 21a of the cast iron platen 21, the mounting hole 23a and the mounting hole 22a of the tin platen 22 are aligned, and fixed with screws. Note that the fall prevention device 23 may be fixed to the tin platen 22 using screws instead of being fixed to the cast iron platen 21 at the bent portion 23b.
[0025]
The cast iron side of the bonded platen is held by a large lathe 53, and the tin surface of the attached tin platen 22 is precisely cut out (step 205). In this embodiment, the parallelism is cut to within 20 microns. Next, the cutting tool 51 is held by a diamond, and the spiral groove 52 is dug in a mountain-like shape on the surface of the tin platen 22 (step 206). FIG. 5 is a schematic view of cutting a spiral groove 52 on the surface of the tin platen 22. In this embodiment, the depth of the groove is 0.6 mm ± 0.1 mm, and the pitch of the groove is 0.9 mm ± 0.1 mm. FIG. 6 shows a state after the groove processing. Another platen shown in FIG. 6 is created. The hard and brittle material is polished by using the two surface plates as one set. Similarly, another surface plate shown in FIG. 7 is created, and one upper and lower surface is set as one set. Further, for the upper platen, a through-hole for flowing an abrasive into the tin platen is dug from the cast iron side to the tin side (step 207), and a copper tube is embedded in the through-hole on the cast iron side (step 208). .
[0026]
FIG. 8 shows a completed view of the polishing platen used in the present invention. Next, the upper and lower platens are attached to a double-side polishing machine (step 209). The above-mentioned abrasive is caused to flow along the injection groove. (Step 210), the upper and lower platens are rotated together in different directions to perform "co-grinding" (Step 211). Burrs and projections remaining on the surface of the tin plate are flattened by the co-sliding, so that large scratches and edge chipping on the processed surface of the workpiece caused by the burrs and projections can be prevented. In addition, since the entire upper surface of the tin platen 22 is flattened by the co-grinding, the flatness of the upper surface is increased, which has an effect of increasing the flatness of the workpiece. Therefore, the sliding is preferably performed for about 5 minutes. FIG. 8 is a state diagram showing a state in which the upper and lower platens are rubbed together. The surface of the lower stool 72 having the spiral grooves 52 faces the surface of the upper stool 71 having the spiral grooves 51. One end of an abrasive injection pipe 73 of the upper stool 71 is connected to an abrasive well 120 for flowing an abrasive, and the abrasive flows from the abrasive well 120 through the abrasive injection pipe 73. The upper stool 71 is fitted with a stool vertical shaft 90. When the shaft is moved up and down, the upper stool 71 moves up and down in conjunction therewith.
[0027]
Then, foreign substances on the surface of the tin platen 22 are wiped off (step 212), and this operation ends.
[0028]
<Example 4>
Next, FIG. 9 shows a step of polishing the hard brittle material of the present invention. The case where sapphire crystal is used as the hard and brittle material will be described. The shape of the sapphire crystal used in the workpiece used in the present invention is a rectangular shape, and a sapphire plate 31 having each surface chamfered and polished by rough polishing is used. In this embodiment, a sapphire plate having a diameter of 50.8 mm and a thickness of 0.5 mm having an orientation flat (orientation flat) of 16 mm was processed using a double-sided simultaneous polishing machine and a GC abrasive.
[0029]
First, the abrasive 32 described above is evenly applied to the lower stool 72 (step 301). The carriers are arranged on the lower platen 72 coated with the abrasive 32 (Step 302), and a workpiece is put into the hole 101 of the carrier 100 (Step 303). FIG. 10 shows the carrier 100. The carrier 100 has a disc-like shape and a hole in the center. In addition, there are six holes 101 between the center and the outer periphery for receiving a workpiece. The six holes 101 are arranged such that respective lines connecting the center and the center of the carrier 100 are equiangular from the center of the carrier 100. The number of holes can be determined based on the size of the workpiece, the outer shape of the carrier 100, and the like.
[0030]
The abrasive 32 is applied to the upper surface of the workpiece placed in the hole 101 of the carrier 100 (step 304). At this time, if the abrasive 32 is applied by being contained in a sponge or the like, the abrasive easily adheres to the upper surface of the workpiece, which is effective. In this embodiment, in order to ensure the setting (setting) of the workpiece, the lower platen 72 was rotated once to confirm the setting state of the workpiece. The upper platen 71 is gently lowered, and is lowered until the upper platen 71 is put on the sapphire plate 31 (step 305). In the present embodiment it was used with vacuum set the double-side polishing machine, if the vacuum setting 9B type 1.8 kg / cm ^2, in the case of a Type 4B was set to 1.3 kg / cm ^2.
[0031]
Next, an abrasive is poured from the abrasive inlet (step 306), and the upper and lower platens 71 and 72 are slowly rotated (step 307). When the upper and lower platens 71 and 72 start rotating, the abrasive 32 is stopped (step 308), and the rotation of the platens 71 and 72 is accelerated (step 309). In this embodiment, the speed was set to 400 RPM. The abrasive 32 is poured at regular intervals from the abrasive inlet (step 310). The abrasive is supplied by a drip method. In the present embodiment, the drip is performed at a rate of one drop per rotation in the case of the 9B type and once every 1.5 seconds in the case of the 4B type. The processing time varies depending on the desired surface roughness and polishing amount, but the polishing rate was 0.06 μm / sec / mm ² for the processed object on the A-side [11-20] of sapphire. In this embodiment, polishing was performed on one side at 15 μm. When processing is completed (step 311), reverse pressure is applied to the upper stool 71 to release the close contact between the lower stool 71 and the workpiece 31, and then slowly lifted up. Further, the sapphire plate 31 is collected (Step 312). FIG. 11 is a state diagram showing polishing of a workpiece. When the grinding fluid is injected into the polishing inlet 100, the grinding fluid is supplied to the abrasive tube 73 along the abrasive well 120. Then, the polishing liquid reaches the upper surface of the lower stool 72.
[0032]
Since the abrasive 32 has a high viscosity, it absorbs impurities and becomes even more viscous. Therefore, foreign substances accumulated in the spiral grooves (V grooves) 52 on the surface plates 71 and 72 are wiped off with a cloth (step 313). In the present embodiment, the wiping of the abrasive 32 was performed once for each processing. When the surface roughness of the sapphire plate after processing was measured, a value of 1.73 Å in average roughness Ra was obtained. Thickness variation was obtained at a maximum of 2 microns in the measurement at the center and at the four peripheral points, and similarly, within 2 microns in flatness.
[0033]
<Example 5>
Next, a method for producing a hard and brittle material of the present invention will be described. FIG. 12 is a process chart showing a method for manufacturing a hard and brittle material. The product manufactured in the polishing process was a sapphire plate for a liquid crystal projector.
[0034]
In this embodiment, the entire process of mirror-finishing a sapphire plate for a liquid crystal projector will be described. First, a sapphire ingot 41 is prepared (Step 401), and the direction of the C axis is measured using an X-ray crystal orientation measuring device (Step 402). The sapphire ingot 31 is preferably a rod-shaped ingot made by, for example, the Czochralski method or the Bernoulli method. In the crystal orientation measurement method using X-rays, the [0001] plane, commonly called the C plane, is measured, and the direction of the C plane is marked. Next, the sapphire ingot is attached to the fixing metal plate 32 (step 403), and a reference surface is formed on the sapphire ingot marked in the C plane according to the mark in the C plane (step 404). The adhesive used for fixing the sapphire ingot is preferably an adhesive having strong adhesiveness and high durability at high temperatures. In this embodiment, a rack was used as the adhesive. It is preferable to use a surface grinder as the machine equipment for creating the reference surface. In this embodiment, a cutting machine equipped with a diamond wheel having a large flat portion is used for the surface grinder.
[0035]
Next, the remaining three surfaces of the bonded sapphire ingot are processed so that the cross-section of the sapphire ingot is slightly larger than the designated size so that the mutual surfaces are at 90 degrees to each other (step 405). . In the present embodiment, the processing equipment used in step 405 is the same as the equipment used for creating the reference plane, and has a dimension that is larger by 1 mm in each direction than the external dimensions of the processing finish. Next, the sapphire ingot 41 whose four surfaces have been processed is cut to a specified thickness (step 406). In this embodiment, a multi-wire saw was used for cutting. The space between the wires was set to a value obtained by adding the cutting allowance and the polishing allowance to the final thickness of the processed product. Several sapphire plates 43 which have been cut are collected and fixed, and processed to the final outer dimensions of the processed product (step 407). The processing equipment to be used is preferably a rotary grinder. In this embodiment, a rotary grinder equipped with a diamond wheel was used to drive the outer dimensions. Next, the slope is chamfered (step 408), and then rough polishing is performed using a double-sided grinding machine (step 409). In this embodiment, the cut amount in the rough polishing was 25 μm on one side.
[0036]
Next, the polishing method of the present invention is performed as intermediate polishing (Step 410). After the completion of the intermediate polishing, the cleaning agent is sufficiently removed with an organic solvent, for example, hexane (step 411). This is because washing is preferably performed in two steps using an organic solvent in order to avoid bringing a diamond into the next chemical polishing step. Next, chemical polishing is performed using a double-side polishing machine (step 412). The abrasive used in the chemical polishing is preferably colloidal silica. In this example, a colloidal silica abrasive having a central particle diameter of 100 nm was used. When the workpiece has a mirror surface, it is washed with a detergent containing a surfactant as a main component and rinsed with water (step 413). The workpiece is dried (step 414), and an appearance inspection and a dimensional inspection are performed (step 420).
[0037]
【The invention's effect】
By applying ultrasonic vibration to the grinding fluid of the present invention, the solution containing the high molecular organic compound and the abrasive can be easily stirred.
[0038]
The grinding fluid of the present invention can be easily stirred by boiling an aqueous solution containing a starch-based polymer compound.
[0039]
The grinding fluid of the present invention can shorten the polishing time by using diamond. Also, by mixing with a solution containing diamond and a polymer organic compound or an aqueous solution containing a starch-based polymer compound, the hard brittle material can be polished without causing deep damage.
[0040]
The surface plate of the present invention uses a grinding fluid containing diamond by using a material that is softer than the first surface plate on which the second surface plate is to be a base, and by providing a groove on any one surface. Even so, the grinding fluid can flow into the grinding surface of the hard and brittle material.
[0041]
Further, the surface plate of the present invention uses cast iron for the first surface plate and tin for the second surface plate, respectively, so that even when a grinding fluid containing diamond is used, the ground surface of the hard and brittle material is used. The grinding fluid can be caused to flow into the nozzle.
[0042]
The hard brittle material of the present invention uses a polishing liquid containing diamond to reduce the polishing time of the hard brittle material by polishing the second surface plate with a surface plate softer than the second surface plate. Therefore, the manufacturing time of the hard and brittle material can be shortened.
[0043]
The present invention can reduce the processing time by simultaneously polishing the opposing surfaces of the hard and brittle materials.
[0044]
In the method for producing a hard brittle material of the present invention, the grinding fluid is introduced while being sandwiched between the lower surface plate and the upper surface plate, so that the hard brittle material can be polished without being fixed to both surface plates. The polishing time can be reduced by eliminating the time required for the material to adhere to and peel off from both platens.
[0045]
The method for producing a hard brittle material of the present invention can stably polish a hard brittle material by sandwiching a carrier between a lower surface plate and an upper surface plate and polishing the same. Can be manufactured.
[Brief description of the drawings]
FIG. 1 is a process chart showing a process of preparing an oily abrasive.
FIG. 2 is a process chart showing a process of preparing a water-soluble abrasive.
FIG. 3 is a process chart showing a method for manufacturing a polishing platen.
FIG. 4 is a state diagram showing a state in which a cast iron platen and a tin platen are bonded together.
FIG. 5 is a schematic diagram in which spiral grooves are provided on the surface of a tin platen.
FIG. 6 is a schematic view showing a completed drawing of a polishing platen.
FIG. 7 is a state diagram showing a state in which an abrasive introduction pipe is attached to an upper surface plate.
FIG. 8 is a state diagram showing a state in which the upper and lower lapping plates are rubbed together.
FIG. 9 is a process chart for polishing a hard and brittle material.
FIG. 10 is a perspective view of a carrier.
FIG. 11 is a state diagram showing a state when polishing a brittle material.
FIG. 12 is a process chart showing a method for producing a hard and brittle material.
FIG. 13 shows a state of polishing the surface by conventional polishing. More specifically, (a) shows the surface state after the rough polishing, and (b) shows the surface state during the chemical polishing.
[Explanation of symbols]
21 Cast iron platen 22 Tin platen 23 Fall prevention plate 71 Upper platen 72 Lower platen 100 Carrier

Claims (9)

A solution containing a high molecular organic compound;
An abrasive to be added to the solution,
A polishing liquid in which the polishing agent is stirred with respect to the solution by applying ultrasonic vibration. The polishing liquid according to claim 1, wherein the solution is an aqueous solution containing a starch-based polymer compound, and the solution is boiled. 3. The polishing liquid according to claim 1, wherein the polishing agent is diamond particles. The first base plate that serves as a base,
Using a material softer than the base, a second surface plate provided with a groove on one surface,
Has,
A surface plate in which a surface of the second surface plate that opposes the one surface provided with the grooves is fixed to the first surface plate. The platen according to claim 4, wherein the first platen is cast iron and the second platen is tin. Any one side using the polishing liquid according to any one of claims 1 to 3,
A hard brittle material polished by the surface plate according to claim 4. Using the polishing liquid according to any one of claims 1 to 3, a surface opposing the arbitrary surface,
Polishing with the surface plate according to claim 4 or 5,
A hard brittle material polished simultaneously with any one of the above surfaces. A step of sandwiching between a lower surface plate having the surface of the surface plate having the groove according to claim 4 or 5 mounted on the upper side and an upper surface plate having the surface having the groove of the surface plate of claim 4 or 5 mounted on the lower side. When,
Flowing the grinding fluid according to any one of claims 1 to 3 between the lower surface plate and the upper surface plate;
Rotating the lower surface plate and the upper surface plate while pouring the grinding fluid, and polishing,
A method for producing a hard and brittle material having: The method for producing a hard and brittle material according to claim 8, further comprising a step of sandwiching and polishing a carrier between the lower surface plate and the upper surface plate.

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