JP2003297265A - Image display device and method of manufacturing the same - Google Patents

Abstract

An object of the present invention is to provide an image display device with improved image quality, which prevents an electron beam from trajectory without causing a rise in temperature and an increase in power consumption, and a method of manufacturing the same. A first substrate having an image display surface is provided.
A second substrate provided with a plurality of electron sources 18 for exciting an image display surface, the second substrate being provided to face the substrate with a gap therebetween, and between the first and second substrates. Are provided with a plurality of spacers 30a and 30b for supporting an atmospheric pressure load acting on the air bearing. Spacer second
A conductor 33 that repels the electron beam emitted from the electron source is provided between the tip on the substrate side and the second substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device having substrates arranged to face each other and a plurality of electron sources arranged on the inner surface of one substrate, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, there has been a demand for a high-definition broadcasting image display device or a high-resolution image display device associated therewith, and the screen display performance thereof is required to be more severe. In order to meet these demands, it is necessary to flatten the screen surface and increase the resolution, and at the same time, it is necessary to reduce the weight and the thickness.

As an image display device satisfying the above demands, for example, a flat panel display device such as a field emission display (hereinafter referred to as FED) has received attention. This FED has a first substrate and a second substrate which are arranged to face each other with a predetermined gap, and the peripheral portions of these substrates are bonded to each other directly or via a rectangular frame-shaped side wall and outside the vacuum. It constitutes the enclosure. A phosphor layer for displaying an image is formed on the inner surface of the first substrate, and a plurality of electron-emitting devices as electron sources for exciting the phosphor layer to emit light are provided on the inner surface of the second substrate. .

Further, in order to support the atmospheric pressure load applied to the first substrate and the second substrate, a plurality of spacers are provided as a supporting member between these substrates. When displaying an image in this FED, an anode voltage is applied to the phosphor layer, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage to collide with the phosphor layer, whereby Lights up and displays an image.

In such an FED, the size of the electron-emitting device is on the order of micrometers, and the distance between the first substrate and the second substrate can be set on the order of millimeters. Therefore, as compared with a cathode ray tube (CRT) currently used as a display of a television or a computer at present, it is possible to achieve higher resolution, lighter weight and thinner profile of an image display device.

[0006]

In order to obtain practical display characteristics in the image display device as described above, a phosphor similar to that of a normal cathode ray tube is used and the anode voltage is set to several k.
It is desirable to set it to V or higher. However, the gap between the first substrate and the second substrate cannot be made too large from the viewpoint of resolution, characteristics of the supporting member, manufacturability, etc.
It is necessary to set it to about 2 mm. Therefore, when the electrons emitted from the second substrate collide with the phosphor screen formed on the first substrate, secondary electrons and reflected electrons are emitted, and these secondary electrons and reflected electrons are arranged between the substrates. And collide with the spacer, and as a result, the spacer is charged. FE
At the acceleration voltage at D, the spacer is generally positively charged, and the electron beam emitted from the electron-emitting device is attracted to the spacer and deviates from the original orbit. As a result, there is a problem that electron beam mislanding occurs in the phosphor layer and the color purity of the displayed image deteriorates.

In order to reduce the attraction of the electron beam by such a spacer, it is conceivable that the entire surface or a part of the spacer surface is subjected to a conductive treatment to release the charge. However, when the spacer itself is subjected to the conductive treatment, the reactive current flowing from the first substrate to the second substrate via the spacer increases, which causes an increase in temperature and an increase in power consumption.

The present invention has been made in view of the above points, and an object thereof is to prevent deviation of the electron beam trajectory without causing an increase in temperature and an increase in power consumption, and an image display apparatus having improved image quality. And to provide a manufacturing method thereof.

[0009]

In order to achieve the above object, an image display device according to an aspect of the present invention includes a first substrate having an image display surface, and a first substrate and a first substrate. Is disposed between the first substrate and the second substrate, which is provided with a plurality of electron sources that emit electrons to excite the image display surface, and act on the first and second substrates. A plurality of spacers that support the atmospheric pressure load, and conductors that are respectively disposed between the second substrate-side end of the spacers and the second substrate and that repel the electron beam emitted from the electron source. It is characterized by having.

According to another aspect of the present invention, there is provided a method of manufacturing an image display device, the first substrate having an image display surface and the first substrate being opposed to each other with a gap therebetween and emitting electrons. Then, the second substrate provided with a plurality of electron sources for exciting the image display surface is disposed between the first substrate and the second substrate, and supports an atmospheric pressure load acting on the first and second substrates. In a method of manufacturing an image display device including a plurality of spacers, a conductor is arranged between a predetermined position of the second substrate and a tip of the spacer on the second substrate side,
The first and second substrates are joined to each other in a state where the tip of the spacer on the side of the second substrate contacts the second substrate with the conductor interposed therebetween.

According to the image display device configured as described above, the electrons emitted from the electron source located in the vicinity of the spacer are once repelled by the electric field formed by the conductor and are orbited in the direction away from the spacer. After taking the space, this time it is attracted by the spacer and takes a trajectory in the direction of approaching the spacer. Then, the repulsion and the attraction cancel out the orbital deviation of the electrons, and the electrons emitted from the electron source finally reach the target position on the image display surface. As a result, it is possible to obtain an image display device in which the deterioration of color purity due to mislanding of electrons is reduced and the image quality is improved.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment in which the present invention is applied to a surface conduction electron-emitting device (hereinafter referred to as SED) which is a kind of FED as a flat image display device with reference to the drawings. The details will be described. As shown in FIGS. 1 to 3, this SED includes a first substrate 10 and a second substrate 12 each made of rectangular glass as a transparent insulating substrate, and these plates have a thickness of about 1.0 to
They are arranged facing each other with a gap of 2.0 mm. The second substrate 12 is formed to have a size slightly larger than that of the first substrate 10. Then, the first substrate 10 and the second substrate 1
2. The flat peripheral vacuum envelope 15 is formed by joining the peripheral portions to each other through the rectangular frame-shaped side wall 14 made of glass.

On the inner surface of the first substrate 10, a phosphor screen 16 is formed as an image forming surface. This phosphor screen 16 is formed by arranging phosphor layers R, G, B, which emit red, blue, and green upon collision of electrons, and a black colored layer 11, side by side. These phosphor layers R, G, B are formed in stripes or dots. A metal back 17 made of aluminum or the like is formed on the phosphor screen 16. A transparent conductive film or a color filter film made of, for example, ITO may be provided between the first substrate 10 and the phosphor screen.

On the inner surface of the second substrate 12, a large number of surface conduction electron-emitting devices 1 each emitting an electron beam as an electron source for exciting the phosphor layer of the phosphor screen 16 are provided.
8 are provided. These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel.
Each electron-emitting device 18 is composed of an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like. On the inner surface of the second substrate 12, a large number of wirings 21 for supplying a potential to the electron-emitting device 18 are provided in a matrix, and the ends of the wirings 21 are drawn out to the outside of the vacuum envelope 15.

The side wall 14 functioning as a joining member is formed of, for example, a sealing material 20 such as low melting point glass or low melting point metal.
The first substrate 10 and the second substrate 12 are bonded to each other by being sealed to the peripheral portion of the first substrate 10 and the peripheral portion of the second substrate 12.

As shown in FIGS. 2 and 3, SE
D includes a spacer assembly 22 disposed between the first substrate 10 and the second substrate 12. In the present embodiment, the spacer assembly 22 is configured to include a plate-shaped grid 24 and a plurality of columnar spacers that are integrally erected on both surfaces of the grid.

More specifically, the grid 24 includes a first surface 24a facing the inner surface of the first substrate 10 and the second substrate 1.
2 has a second surface 24b opposed to the inner surface thereof and is arranged in parallel with these substrates. A large number of electron beam passage holes 26 and a plurality of spacer openings 28 are formed in the grid 24 by etching or the like. The electron beam passage hole 26 functioning as an opening in the present invention
Are arranged so as to face the electron-emitting devices 18, and transmit the electron beams emitted from the electron-emitting devices. In addition, the spacer openings 28 are formed in the electron beam passage holes 2 respectively.
It is located between 6 and arranged at a predetermined pitch.

The grid 24 is formed of, for example, an iron-nickel-based metal plate to a thickness of 0.1 to 0.25 mm, and the surface of the grid 24 is made of an oxide film made of an element forming the metal plate, for example, An oxide film made of Fe ₃ O ₄ and NiFe ₃ O ₄ is formed. Further, on the surface of the grid 24, a high resistance film formed by applying and firing a high resistance material made of glass or ceramic is formed, and the resistance of the high resistance film is
It is set to E + 8Ω / □ or higher.

Further, the electron beam passage hole 26 is, for example,
The spacer opening 28 is formed in a rectangular shape of 0.15 to 0.25 mm × 0.15 to 0.25 mm, and the spacer opening 28 is formed in a circular shape having a diameter of about 0.2 to 0.5 mm, for example. The high resistance film described above is also formed on the wall surface of the electron beam passage hole 26 provided in the grid 24.

On the first surface 24a of the grid 24, a first spacer 30a is integrally erected on the first surface 24a so as to overlap the spacer openings 28, and the extending end of the first spacer 30a is black of the metal back 17 and the phosphor screen 16. It contacts the inner surface of the first substrate 10 via the colored layer 11. In the present embodiment, the extending end of each first spacer 30a is in contact with the metal back 17 via the indium layer that functions as the spacer height variation reducing layer 31. Here, the height variation alleviating layer 31 is not limited to a metal as long as it has no effect on the trajectory of the electron beam and has an appropriate hardness to alleviate the height variation of the spacer. is not. The metal back 17 and the black colored layer 11 of the phosphor screen 16 also have an effect of alleviating the height variation of the spacers, and if a sufficient height variation alleviating effect can be obtained, the height variation alleviating layer 31 is dared. There is no need to provide it.

Further, on the second surface 24b of the grid 24, a second spacer 30b is integrally erected so as to overlap with each spacer opening 28, and its extended end is in contact with the inner surface of the second substrate 12. Touching. Here, the extended end of each second spacer 30b is located on the wiring 21 provided on the inner surface of the second substrate 12, and between this wiring and the extended end of the second spacer. A conductor 33 is provided. The conductor 33 is formed in a shape substantially similar to the extending end of the second spacer 30b, and the thickness thereof, that is, the height along the direction orthogonal to the second substrate 12 is set to 120 μm, for example. .

As will be described later, the conductor 33 causes the electron beam emitted from the electron emitting element 18 to pass through the second spacer 30.
It acts so as to repel in a direction away from b. The conductor 33 is, for example, platinum, tungsten,
It is formed of a refractory metal such as iridium, rhenium, osmium, or ruthenium, an alloy of these, or conductive glass containing these metals. Although metals such as indium, aluminum, silver, and copper can be used as the conductor 33, if a melting temperature is low when an electric discharge occurs, there is a possibility that the metal melts and does not exhibit its original function. It is preferable to use.

Although the shape of the conductor 33 is not particularly limited,
It is desirable that the corners are rounded in consideration of discharge. Further, the height of the conductor 33 is arbitrarily set in consideration of the repulsive force given to the electron beam, that is, the orbital correction amount of the electron beam.

Each of the first and second spacers 30a and 30b is formed in a tapered shape whose diameter decreases from the grid 24 side toward the extending end. For example, each first spacer 30a is formed so that the diameter of the base end located on the grid 24 side is about 0.4 mm, the diameter of the extending end is about 0.3 mm, and the height is about 0.6 mm. Also, each second spacer 3
0b has a diameter of the base end located on the grid 24 side of about 0.4 m.
m, diameter of extension end is about 0.25 mm, height is about 0.8 mm
Is formed in. As described above, the height of the first spacer 30a is lower than the height of the second spacer 30b, and the height of the second spacer is set to about 4/3 times or more the height of the first spacer. ing.

The surface resistance of the first spacer 30a and the second spacer 30b is 5 × 10 ¹³ Ω. Each spacer opening 28, first and second spacers 30a, 30
b are aligned with each other, and the first and second spacers are integrally connected to each other through the spacer opening 28. Thereby, the first and second spacers 30a,
30b is formed integrally with the grid 24 with the grid 24 sandwiched from both sides.

The spacer assembly 22 constructed as described above is arranged between the first substrate 10 and the second substrate 12. Then, the first and second spacers 30a, 3
By contacting the inner surfaces of the first substrate 10 and the second substrate 12, 0b supports the atmospheric pressure load acting on these substrates and maintains the distance between the substrates at a predetermined value.

As shown in FIG. 2, the SED has a grid 2
4 and the voltage supply unit 50 for applying a voltage to the metal back 17 of the first substrate 10. This voltage supply unit 50
Are respectively connected to the grid 24 and the metal back 17, and for example, a voltage of 12 kV is applied to the grid 24 and a voltage of 10 kV is applied to the metal back 17. That is, the voltage applied to the grid 24 is set higher than the voltage applied to the first substrate 10, for example, within 1.25 times.

When displaying an image in this SED, the phosphor screen 16 and the metal back 1 are used.
An anode voltage is applied to 7, and the electron beam B emitted from the electron-emitting device 18 is accelerated by the anode voltage to collide with the phosphor screen 16. As a result, the phosphor layer of the phosphor screen 16 is excited and emits light, and an image is displayed.

Next, a method of manufacturing the SED configured as above will be described. When manufacturing the spacer assembly 22, first, a grid 24 having a predetermined size, and a rectangular plate-shaped first plate (not shown) having substantially the same size as the grid 24 are manufactured.
And prepare a second mold. In this case, Fe-50% N
After degreasing, cleaning, and drying a thin plate made of i having a plate thickness of 0.12 mm, electron beam passage holes 26 and spacer openings 28 are formed by etching to form a grid 24. After that, the entire grid 24 is oxidized by an oxidation process to form an insulating film on the grid surface including the inner surfaces of the electron beam passage holes 26 and the spacer openings 28. Further, a liquid in which fine particles of tin oxide and antimony oxide are dispersed is spray-coated on the insulating film, dried and baked to form a high resistance film.

The first and second molds each have a plurality of through holes corresponding to the spacer openings 28 of the grid 24. Further, in the first mold and the second mold, at least the inner surfaces of the plurality of through holes corresponding to the spacer openings 28 are coated with a resin that is thermally decomposed by heat treatment.

Then, in the first die, each through hole has a grid 2
No. 4 spacer opening 28 is positioned and aligned with the first surface 24a of the grid. Similarly,
In the second mold, each through hole is a spacer opening 28 of the grid 24.
The second surface 24b of the grid is brought into close contact with the second surface 24b while being positioned so as to be aligned with. Then, the first mold, the grid 24, and the second mold are fixed to each other using a clamper or the like not shown.

Next, for example, a paste-like spacer forming material is supplied from the outer surface side of the first mold to pass through the through holes of the first mold.
A spacer forming material is filled in the spacer openings 28 of the grid 24 and the through holes of the second mold. As the spacer forming material, a glass paste containing at least an ultraviolet curable binder (organic component) and a glass filler is used.

Subsequently, the filled spacer forming material is irradiated with ultraviolet rays (UV) as radiation from the outer surface side of the first and second molds to cure the spacer forming material by UV. Thereafter, if necessary, heat curing may be performed. Next, the resin applied to the through holes of the first and second molds is thermally decomposed by heat treatment to form a gap between the spacer forming material and the mold, and the first and second molds are moved from the grid 24. Peel off.

Subsequently, the grid 24 filled with the spacer forming material is heat-treated in a heating furnace to remove the binder from the spacer forming material, and then the grid 24 is heated at about 500 to 550 ° C. for 30 minutes.
The spacer-forming material is main-baked for a minute to 1 hour. As a result, the first and second spacers 30a on the grid 24,
The spacer assembly 22 in which 30b is built is obtained.

On the other hand, a first substrate 10 provided with a phosphor screen 16 and a metal back 17 in advance, and a second substrate 12 provided with an electron-emitting device 18 and a wiring 21 and having a side wall 14 joined thereto, Be prepared.

Then, on the wiring 21 of the second substrate 12, the tip of the second spacer 30b is formed in a shape substantially similar to that of the tip of the second spacer 30b and a thickness of 120 μm.
After the conductive paste is printed so as to be m, the conductor 33 is dried and baked to form the conductor 33 at a predetermined position on the wiring 21. In addition, indium powder for forming the height relaxing layer 31 is applied to the extending end of each first spacer 30a.

Next, the spacer assembly 22 configured as described above is positioned and arranged on the second substrate 12.
At this time, the spacer assembly 22 is positioned so that the extended ends of the second spacers 30b are in contact with the conductors 33, respectively. In this state, the first substrate 10, the second substrate 12,
The spacer assembly 22 is placed in the vacuum chamber, the interior of the vacuum chamber is evacuated, and then the first substrate is bonded to the second substrate through the side wall 14. At the same time, the indium powder arranged at the extended end of the first spacer 30a is melted and crushed by the first substrate 10 to correct the height. As a result, the SED including the spacer assembly 22 is manufactured.

According to the SED configured as described above,
As shown in FIG. 3, the electron beam B emitted from the electron-emitting device 18 located in the vicinity of the second spacer 30b is a conductor provided between the extended end of the second spacer 30b and the second substrate 12. Repulsed by the electric field formed by the layer 33, the second
It heads for the electron beam passage hole 26 while taking a trajectory in a direction away from the spacer. After that, the electron beam B, in turn, is charged by the second spacers 30b and the first spacers 3b.
It is attracted by 0a and takes a trajectory in the direction of approaching these spacers. Then, the repulsion and suction cancel out the deviation of the orbit of the electron beam B, and the electron beam B emitted from the electron emitting element 18 finally reaches the target phosphor layer of the phosphor screen 16.

Specifically, the smaller the distance from the electron-emitting device to the side wall of the spacer, the larger the amount of movement of the electron beam toward the spacer side. Conversely, when the distance to the side wall of the spacer is sufficiently large, the electron beam moves toward the spacer. The amount of movement to the side is negligible. The electron beam movement phenomenon occurs when secondary electrons and reflected electrons generated on the phosphor screen collide with the spacer, and at this time, the secondary electron emission coefficient on the spacer surface is 1 or more from the acceleration voltage used in the SED. Therefore, the spacer side wall is positively charged, and the electron beam is attracted to the spacer side.

In the present embodiment, the charge on the side wall of the spacer is not released, but the conductor 33 is provided between the second substrate side end of the spacer having a small electron velocity and the second substrate. It becomes possible to easily form an electric field in the direction in which the beam repels the spacer. And the conductor 3
By controlling the height of 3, the strength of the electric field can be changed and the amount of repulsion can be controlled. Therefore, like a grid of an electron gun in a CRT, a low potential part and a high potential part are alternately provided at a specific distance, a focusing system by an electron lens is provided, and a complicated mechanism for focusing an electron beam is provided. No need.

Therefore, the first and second spacers 30a,
Even if 30b is charged and the electron beam B is attracted by these spacers, it is possible to prevent the trajectory shift of the electron beam. Thereby, mislanding of the electron beam B can be prevented, and as a result, deterioration of color purity can be reduced and image quality can be improved.

When the entire surface or a part of the surface of the spacer is directly subjected to the conductive treatment, the reactive current flowing from the first substrate to the second substrate via the spacer increases, which causes an increase in temperature and power consumption. cause. In addition, this conductive processing portion may serve as a gas generation source during the operation of the SED, which may cause ion bombardment of the electron source near the spacer. On the other hand, according to the present embodiment, the electric field around the spacer is changed by the conductor 33 without increasing the reactive current, the temperature, the power consumption, and the ion collision, thereby facilitating the trajectory of the electron beam. Can be controlled.

When the SED according to the present embodiment and the SED not provided with the above-mentioned conductor 33 are prepared and the amount of movement of the electron beam is compared, the SED not provided with the conductor does not produce an electron beam. About 120 μm on the spacer side
In contrast to the suction, in the SED according to the present embodiment,
The amount of movement of the electron beam was almost zero, and the color purity of the displayed image was improved.

Further, according to the SED, the first substrate 10
The grid 24 is arranged between the second spacer 12 and the second substrate 12, and the height of the first spacer 30a is lower than the height of the second spacer 30b. This allows
The grid 24 is located closer to the first substrate 10 side than the second substrate 12. Therefore, even when discharge is generated from the first substrate 10 side, the grid 24 causes the second substrate 1
It is possible to suppress discharge damage of the electron-emitting device 18 provided on the second electrode. Therefore, it is possible to obtain an SED having excellent withstand voltage against discharge and having improved image quality.

Further, according to the SED having the above structure, the voltage applied to the grid 24 is set to the first by making the height of the first spacer 30a lower than that of the second spacer 30b.
Even when the voltage applied to the substrate 10 is higher than the voltage applied to the substrate 10, the electrons generated from the electron-emitting device 18 can surely reach the phosphor screen side.

Further, by providing the height variation alleviating layer, even if there are variations in the height of the plurality of first spacers 30a, the variation is absorbed by the height variation alleviating layer and the plurality of first spacers and the first spacer It is possible to surely make contact with the substrate 10. Therefore, the first and second spacers 30a and 30b allow the first substrate 10 and the second substrate 1 to
It is possible to keep the distance between the two uniform over almost the entire area.

Next, an SED according to the second embodiment of the present invention will be described. As shown in FIG. 4, according to the second embodiment, the conductor 33 is formed of a metal or an alloy in a shape similar to the extension end of the second spacer 30b. For example, the conductor 33 is formed of a metal plate of Fe-50% Ni and has a thickness of 200 μm, and is fixed on the wiring 21 of the second substrate 12 by a fixing layer 40 made of a conductive frit, a conductive adhesive, or the like. There is. Then, the spacer assembly 22 is configured such that the extending ends of the respective second spacers 30b are in contact with the conductors 33 and the first and second substrates 1
It is located between 0 and 12. Note that the other configurations are the same as those in the first embodiment described above, and the same reference numerals are given to the same portions, and detailed description thereof will be omitted.

When manufacturing the SED according to the second embodiment configured as described above, the first and second substrates 10 and 1 are manufactured by the same steps as in the above-described first embodiment.
2 and the spacer assembly 22 are formed. At this time, the height of the first spacer 30a was 0.2 mm, and the height of the second spacer 30b was 1.0 mm.

Subsequently, a conductive adhesive having a thickness of 5 μm is applied at a predetermined position on the wiring 21 of the second substrate 12 in a shape similar to the tip of the second spacer 30b to form the fixing layer 40. The thickness of Fe-50% Ni on the fixed layer 40 is 2
After mounting the conductor 33 of 00 μm, the fixing layer is dried,
The conductor 33 is fixed on the wiring.

After that, as in the first embodiment, the spacer assembly 22 is positioned and arranged on the second substrate 12. At this time, the spacer assembly 22 is arranged so that the extended ends of the second spacers 30b come into contact with the conductors 33, respectively.
To position. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are placed in a vacuum chamber, the interior of the vacuum chamber is evacuated, and then the sidewall 1
The first substrate is bonded to the second substrate via 4. Thereby, the SED is manufactured.

According to the SED configured as described above,
It is possible to obtain the same operational effects as those of the first embodiment described above. Further, in the second embodiment, the fixed layer 40 in which the conductor 33 is fixed to the wiring 21 can be used as a correction layer for correcting height variation of the spacer. Therefore, it is possible to reduce the manufacturing cost of the spacer without requiring high processing accuracy of the spacer.

Further, the SED according to the second embodiment,
When an SED not provided with the conductor 33 was prepared and the amount of movement of the electron beam was compared, the electron beam was about 150 μm on the spacer side in the SED not provided with the conductor.
In contrast to m suction, the SED according to the present embodiment has an electron beam movement amount of almost zero, and the color purity of the displayed image is also improved.

Next explained is an SED according to the third embodiment of the invention. As shown in FIG. 5, according to the third embodiment, the conductor 33 is formed of metal or alloy in a shape similar to the extension end of the second spacer 30b. For example, the conductor 33 is formed of a metal plate of Fe-50% Ni and has a thickness of 200 μm, and is fixed to the extending end of the second spacer 30b by an insulating adhesive, for example, a fixing layer 42 made of frit glass. ing. The spacer assembly 22 includes the first and second substrates 10 in a state where the extending ends of the second spacers 30b to which the conductors 33 are fixed are in contact with the wirings 21 on the second substrate 12.
It is located between twelve. Note that the other configurations are the same as those in the first embodiment described above, and the same reference numerals are given to the same portions, and detailed description thereof will be omitted.

When manufacturing the SED according to the third embodiment configured as described above, the first and second substrates 10 and 1 are manufactured by the same steps as in the above-described first embodiment.
2 and the spacer assembly 22 are formed. At this time, the height of the first spacer 30a was 0.2 mm, and the height of the second spacer 30b was 1.0 mm.

Subsequently, frit glass is applied to the tip of each second spacer 30b of the spacer assembly 22 to form the fixing layer 42. And Fe-50% on the fixed layer 42
After the conductor 33 made of Ni and having a thickness of 200 μm is placed, the fixed layer is dried and fired to form the conductor 33.
Is fixed to the tip of the second spacer 30b.

Next, similarly to the first embodiment, the spacer assembly 22 is positioned and arranged on the second substrate 12. At this time, the spacer assembly 22 is positioned so that the extended ends of the second spacers 30b to which the conductors 33 are fixed are located on the wirings 21 of the second substrate 12, respectively. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are placed in a vacuum chamber,
After evacuating the inside of the vacuum chamber, the first substrate is bonded to the second substrate through the side wall 14. Thereby, the SED is manufactured.

According to the SED configured as described above,
It is possible to obtain the same effect as that of the first embodiment. Further, in the second embodiment, the fixing layer 42 in which the conductor 33 is fixed to the tip of the second spacer can be used as a correction layer for correcting the spacer height variation. Therefore, the high processing accuracy of the spacer is not required,
It is possible to reduce the manufacturing cost of the spacer.

Further, the SED according to the third embodiment,
When an SED not provided with the conductor 33 was prepared and the amount of movement of the electron beam was compared, the electron beam was about 150 μm on the spacer side in the SED not provided with the conductor.
In contrast to m suction, the SED according to the present embodiment has an electron beam movement amount of almost zero, and the color purity of the displayed image is also improved.

The present invention is not limited to the above-described embodiments, but can be variously modified within the scope of the present invention. For example, the present invention can be applied not only to the image display device having the grid but also to the image display device having no grid. In this case, by using columnar or plate-like spacers formed integrally with each other and providing a conductor between the second substrate side tip of each spacer and the second substrate, the same effect as the above is obtained. be able to.

Further, in the present invention, the diameter and height of the spacer and the dimensions and materials of the other constituent elements can be appropriately selected as required. Further, in the above-described embodiment, the conductor is provided between the wiring on the second substrate and the tip of the spacer. However, the conductor is not limited to the wiring, and the second substrate and the spacer may be provided at a position avoiding the electron-emitting device. It only has to be provided between the tip.

The electron source is not limited to the surface conduction electron-emitting device, but any type of FED can be applied as long as it is a field-emission type, an FED using an electron source that emits electrons into a vacuum such as carbon nanotubes.

[0062]

As described in detail above, according to the present invention, an image display device having an improved image quality by preventing orbit shift of an electron beam without causing an increase in temperature and an increase in power consumption is provided. A manufacturing method can be provided.

[Brief description of drawings]

FIG. 1 is a perspective view showing an SED according to an embodiment of the present invention.

2 is a perspective view of the SED taken along the line AA of FIG.

FIG. 3 is an enlarged sectional view showing the SED.

FIG. 4 is an enlarged sectional view showing a main part of an SED according to a second embodiment of the present invention.

FIG. 5 is an enlarged sectional view showing an essential part of an SED according to a third embodiment of the present invention.

[Explanation of symbols]

10 ... First substrate 12 ... Second substrate 14 ... Side wall 15 ... Vacuum envelope 16 ... Phosphor screen 18 ... Electron emitting device 22 ... Spacer assembly 24 ... Grid 26 ... Electron beam passage hole 28 ... Spacer opening 30a ... first spacer 30b ... second spacer 33 ... Conductor 40, 42 ... Fixed layer 50 ... Voltage supply unit

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Satoko Koyanazu             2 shares, 1-9-1 Harara-cho, Fukaya City, Saitama Prefecture             Company Toshiba Fukaya Factory (72) Inventor Satoshi Ishikawa             2 shares, 1-9-1 Harara-cho, Fukaya City, Saitama Prefecture             Company Toshiba Fukaya Factory F-term (reference) 5C012 AA05 BB07                 5C032 AA01 CC10                 5C036 EE02 EE09 EE19 EF01 EF06                       EF09 EH08

Claims (13)

[Claims] 1. A first substrate having an image display surface, and a plurality of electron sources which are arranged to face the first substrate with a gap therebetween and which emit electrons to excite the image display surface. A second substrate, a plurality of spacers arranged between the first substrate and the second substrate to support an atmospheric pressure load acting on the first and second substrates, and a tip of the spacer on the second substrate side. And an electric conductor which is disposed between the second substrate and the second substrate and repels the electron beam emitted from the electron source. 2. A first substrate having an image display surface, and a plurality of electron sources which are arranged to face the first substrate with a gap therebetween and which emit electrons to excite the image display surface. A second substrate, a plate-shaped grid disposed between the first substrate and the second substrate and having a plurality of apertures through which electrons emitted from the electron source pass, A plurality of spacers fixed to the grid and arranged between the first substrate and the second substrate to support an atmospheric pressure load acting on the first and second substrates; and a spacer on the second substrate side of the spacer. An image display device, comprising: a conductor disposed between a tip and the second substrate and repelling an electron beam emitted from the electron source. 3. The image display device according to claim 1, wherein the conductor is formed by sintering a conductive paste. 4. The image display device according to claim 1, wherein the conductor is formed of a metal plate or an alloy plate. 5. The conductor is fixed to the second substrate via a conductive fixing layer.
The image display device according to. 6. The image display device according to claim 4, wherein the conductor is fixed to the tip of the spacer on the second substrate side via an insulating fixing layer. 7. The image display device according to claim 1, wherein the conductor has a shape similar to a tip of the spacer on the second substrate side. 8. The image display device according to claim 1, wherein the electron source is a surface conduction electron source. 9. A plurality of wirings provided on the second substrate for supplying a potential to the electron source, wherein each of the conductors is arranged on the wirings. The image display device according to any one of 1. 10. A first substrate having an image display surface, and a plurality of electron sources which are arranged to face the first substrate with a gap therebetween and which emit electrons to excite the image display surface. A method for manufacturing an image display device, comprising: a second substrate; and a plurality of spacers arranged between the first substrate and the second substrate and supporting an atmospheric pressure load acting on the first and second substrates, A conductor is disposed between a predetermined position of the second substrate and a tip of the spacer on the side of the second substrate, and the tip of the spacer contacts the second substrate with the conductor sandwiching the conductor. A method for manufacturing an image display device, comprising bonding the first and second substrates to each other in a state of being arranged so as to be in contact with each other. 11. The step of disposing the conductor comprises the step of
11. The method for manufacturing a flat panel display device according to claim 10, wherein a conductive paste is printed at a desired position on the substrate in a shape substantially similar to the shape of the spacer tip and is baked to form the conductor. 12. The step of disposing the conductor comprises the step of
A fixing layer having conductivity is formed at a desired position on the substrate, and a conductor having a shape substantially similar to the tip shape of the spacer made of a metal or alloy plate is placed on the fixing layer and fixed. The method for manufacturing a flat panel display device according to claim 10. 13. In the step of disposing the conductor, a fixing layer having an insulating property is formed at the tip of the spacer on the side of the second substrate, and a spacer made of a metal or alloy plate is interposed through the fixing layer. 11. The method for manufacturing a flat-panel display device according to claim 10, wherein a conductor having a shape similar to the tip shape is fixed to the tip of the spacer.