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JP2003277586A - Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device - Google Patents

Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device

Info

Publication number
JP2003277586A
JP2003277586A JP2002084810A JP2002084810A JP2003277586A JP 2003277586 A JP2003277586 A JP 2003277586A JP 2002084810 A JP2002084810 A JP 2002084810A JP 2002084810 A JP2002084810 A JP 2002084810A JP 2003277586 A JP2003277586 A JP 2003277586A
Authority
JP
Japan
Prior art keywords
epoxy resin
optical semiconductor
resin composition
semiconductor element
filler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002084810A
Other languages
Japanese (ja)
Other versions
JP4010841B2 (en
Inventor
Ikuo Nakasuji
郁雄 中筋
Takashi Toyama
貴志 外山
Takanori Kushida
孝則 櫛田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2002084810A priority Critical patent/JP4010841B2/en
Publication of JP2003277586A publication Critical patent/JP2003277586A/en
Application granted granted Critical
Publication of JP4010841B2 publication Critical patent/JP4010841B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

(57)【要約】 【課題】 光半導体装置の受発光時の光透過性のみなら
ず、光拡散性の確保にも寄与しうる光半導体素子封止用
エポキシ樹脂組成物及びこれを使用した光半導体装置を
提供する。 【解決手段】 エポキシ樹脂、硬化剤、及び硬化促進剤
を含有していて、且つ、透光性を有する有機物よりなる
充填材を有する光半導体素子封止用エポキシ樹脂組成物
であって、前記エポキシ樹脂、前記硬化剤、及び前記硬
化促進剤よりなる硬化物の屈折率と、前記充填材の屈折
率の差が、±0.01以上であり、且つ、厚み1mmの
前記光半導体素子封止用エポキシ樹脂組成物の硬化物よ
りなる成形品の光透過率が、30〜85%、光反射率
が、2〜70%の範囲内にあるので、良好な透光性とと
もに充分な光拡散性の確保が可能になる。
PROBLEM TO BE SOLVED: To provide an epoxy resin composition for encapsulating an optical semiconductor element capable of contributing not only to light transmittance at the time of light receiving and emitting of an optical semiconductor device but also to ensuring light diffusion, and light using the same A semiconductor device is provided. SOLUTION: The epoxy resin composition for encapsulating an optical semiconductor element, comprising an epoxy resin, a curing agent, and a curing accelerator, and having a filler made of a translucent organic substance, The difference between the refractive index of the cured product composed of the resin, the curing agent, and the curing accelerator, and the refractive index of the filler is ± 0.01 or more, and the optical semiconductor element sealing having a thickness of 1 mm. Since the light transmittance of the molded article made of the cured product of the epoxy resin composition is in the range of 30 to 85% and the light reflectance is in the range of 2 to 70%, sufficient light diffusing property is provided together with good light transmittance. It becomes possible to secure.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、光半導体素子封止
用エポキシ樹脂組成物及び光半導体装置に関するもので
ある。
TECHNICAL FIELD The present invention relates to an epoxy resin composition for encapsulating an optical semiconductor element and an optical semiconductor device.

【0002】[0002]

【従来の技術】従来より、受光素子、発光素子等の光半
導体素子の封止用材料としてエポキシ樹脂組成物が一般
的に用いられているが、これら光半導体素子の封止材料
用エポキシ樹脂組成物の充填材としては、内部応力の低
減と透光率の確保のバランスの観点からエポキシ樹脂硬
化物との屈折率の差異を低減したシリカ粉末を使用する
等の種々の検討が精力的になされている。
2. Description of the Related Art Conventionally, an epoxy resin composition has been generally used as a sealing material for an optical semiconductor element such as a light receiving element or a light emitting element. As a filler for the material, various studies such as using silica powder with a reduced difference in refractive index from the cured epoxy resin from the viewpoint of a balance between reduction of internal stress and securing of light transmittance have been vigorously made. ing.

【0003】[0003]

【発明が解決しようとする課題】一方、上記のように、
シリカ粉末の屈折率の調整等の検討により、主として、
透光率の確保を追求する従来からの技術トレンドに対
し、近年では、寧ろLED等の光半導体装置が、照明用
途等のより広範なアプリケーションへの応用展開の研究
が進展するに伴い、光透過性のみならず、光拡散性や光
干渉防止性等が、要求されるデバイスへの適用に対する
ニーズも高まってきている。
On the other hand, as described above,
By studying adjustment of the refractive index of silica powder, mainly
In contrast to the conventional technological trend of pursuing the securing of light transmittance, in recent years, optical semiconductor devices such as LEDs have been researched to be applied to a wider range of applications such as lighting applications. In addition to the characteristics, there is an increasing need for application to devices that require optical diffusivity and optical interference prevention.

【0004】本発明は、上記事由に鑑みてなされたもの
で、その目的とするところは、光透過性のみならず、光
拡散性の確保にも寄与しうる光半導体素子封止用エポキ
シ樹脂組成物及びこれを使用した光半導体装置を提供す
ることにある。
The present invention has been made in view of the above circumstances, and an object thereof is to provide an epoxy resin composition for optical semiconductor element encapsulation that can contribute not only to light transmission but also to light diffusion. An object is to provide an object and an optical semiconductor device using the same.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、請求項1に係る光半導体素子封止用エポキシ樹脂組
成物にあっては、エポキシ樹脂、硬化剤、及び硬化促進
剤を含有していて、且つ、透光性を有する有機物よりな
る充填材を用いてなる光半導体素子封止用エポキシ樹脂
組成物であって、前記エポキシ樹脂、前記硬化剤、及び
前記硬化促進剤よりなる硬化物の屈折率と、前記充填材
の屈折率が異なることを特徴とするものである。
In order to solve the above problems, the epoxy resin composition for optical semiconductor element encapsulation according to claim 1 contains an epoxy resin, a curing agent, and a curing accelerator. And an epoxy resin composition for encapsulating an optical semiconductor element, which comprises a filler made of a translucent organic material, wherein the epoxy resin, the curing agent, and the curing accelerator are cured products. And the refractive index of the filler are different.

【0006】請求項2に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1記載の光半導体素子
封止用エポキシ樹脂組成物において、前記エポキシ樹
脂、前記硬化剤、及び前記硬化促進剤よりなる硬化物の
屈折率と、前記充填材の屈折率の差が、±0.01以上
であり、且つ、厚み1mmの前記光半導体素子封止用エ
ポキシ樹脂組成物の硬化物よりなる成形品の光透過率
が、30〜85%、光反射率が、2〜70%であること
を特徴とするものである。
An epoxy resin composition for encapsulating an optical semiconductor element according to claim 2 is the epoxy resin composition for encapsulating an optical semiconductor element according to claim 1, wherein the epoxy resin, the curing agent, and the From the cured product of the epoxy resin composition for optical semiconductor element encapsulation, the difference between the refractive index of the cured product of the curing accelerator and the refractive index of the filler is ± 0.01 or more, and the thickness is 1 mm. The molded product has a light transmittance of 30 to 85% and a light reflectance of 2 to 70%.

【0007】請求項3に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1または請求項2記載
の光半導体素子封止用エポキシ樹脂組成物において、前
記充填材が、少なくとも、メラミンとホルムアルデヒド
との縮合反応物を含んでなることを特徴とするものであ
る。
In the epoxy resin composition for optical semiconductor element encapsulation according to claim 3, in the epoxy resin composition for optical semiconductor element encapsulation according to claim 1 or 2, the filler is at least , A condensation reaction product of melamine and formaldehyde.

【0008】請求項4に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1または請求項2記載
の光半導体素子封止用エポキシ樹脂組成物において、前
記充填材が、少なくとも、メタクリル酸エステルの重合
反応物を含んでなることを特徴とするものである。
In the epoxy resin composition for optical semiconductor element encapsulation according to claim 4, in the epoxy resin composition for optical semiconductor element encapsulation according to claim 1 or 2, the filler is at least And a methacrylic acid ester polymerization reaction product.

【0009】請求項5に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1乃至請求項4のいず
れかに記載の光半導体素子封止用エポキシ樹脂組成物に
おいて、前記充填材の添加量がエポキシ樹脂組成物全体
の0.5〜30質量%であることを特徴とするものであ
る。
The epoxy resin composition for optical-semiconductor element encapsulation according to claim 5 is the epoxy resin composition for optical-semiconductor element encapsulation according to any one of claims 1 to 4, wherein the filling is performed. The amount of the material added is 0.5 to 30 mass% of the entire epoxy resin composition.

【0010】請求項6に係る光半導体装置にあっては、
請求項1乃至請求項5のいずれかに記載の光半導体素子
封止用エポキシ樹脂組成物を用いて光半導体素子を封止
してなることを特徴とするものである。
In the optical semiconductor device according to claim 6,
An optical semiconductor element is encapsulated by using the epoxy resin composition for encapsulating an optical semiconductor element according to any one of claims 1 to 5.

【0011】[0011]

【発明の実施の形態】以下、本発明の実施形態を説明す
る。本発明に係る光半導体素子封止用エポキシ樹脂組成
物は、エポキシ樹脂、硬化剤、及び硬化促進剤を含有し
ていて、且つ、透光性を有する有機物よりなる充填材を
用いてなるものである。更には、前記エポキシ樹脂、前
記硬化剤、及び前記硬化促進剤よりなる硬化物の屈折率
と、前記充填材の屈折率が異なり、前記エポキシ樹脂、
前記硬化剤、及び前記硬化促進剤よりなる硬化物の屈折
率と、前記充填材の屈折率の差が、±0.01以上であ
り、加えて、厚み1mmの前記光半導体素子封止用エポ
キシ樹脂組成物の硬化物よりなる成形品の光透過率が、
30〜85%、光反射率が、2〜70%であることによ
り特徴付けられる。この結果、良好な透光性とともに充
分な光拡散性の確保を図ることができるというものであ
る。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. The epoxy resin composition for encapsulating an optical semiconductor element according to the present invention contains an epoxy resin, a curing agent, and a curing accelerator, and uses a filler made of a light-transmitting organic material. is there. Furthermore, the epoxy resin, the curing agent, and the cured product of the curing accelerator and the refractive index of the cured material, the refractive index of the filler is different, the epoxy resin,
The difference between the refractive index of a cured product composed of the curing agent and the curing accelerator and the refractive index of the filler is ± 0.01 or more, and in addition, the epoxy for optical semiconductor element encapsulation having a thickness of 1 mm is used. The light transmittance of a molded article made of a cured product of the resin composition,
It is characterized by a light reflectance of 30 to 85% and a light reflectance of 2 to 70%. As a result, it is possible to ensure a sufficient light diffusion property as well as a good light transmission property.

【0012】即ち、上記の透光性を有する有機物よりな
る充填材としては、前記エポキシ樹脂、前記硬化剤、及
び前記硬化促進剤よりなる硬化物の屈折率と、前記充填
材の屈折率の差が、±0.01以上異なることが必要と
なる。屈折率が同じもの(例えば、前記エポキシ樹脂、
前記硬化剤、及び前記硬化促進剤よりなる硬化物の粉砕
品等)や屈折率が±0.01以内のものでは、透光性は
確保できても、十分な光拡散効果が得られないからであ
る。
That is, the difference between the refractive index of the cured material composed of the epoxy resin, the curing agent, and the curing accelerator, and the refractive index of the filler is used as the filler composed of the light-transmitting organic material. However, it is necessary that the difference is ± 0.01 or more. Those having the same refractive index (for example, the epoxy resin,
If a hardened product of the above-mentioned curing agent and the above-mentioned curing accelerator, etc.) or having a refractive index of ± 0.01 or less, a sufficient light diffusing effect cannot be obtained even though the translucency can be secured. Is.

【0013】上記の透光性を有する有機物としては、具
体的には、メラミンとホルムアルデヒドとの縮合反応物
を含んでなるもの、メタクリル酸エステルの重合反応物
を含んでなるもの等の有機高分子化合物が例示できる。
これらはいずれも、透光性を有する固体として得ること
ができ、メラミンとホルムアルデヒドとの縮合反応物を
含んでなるものを例にとれば、縮合反応に係る出発物質
であるメラミンとホルムアルデヒドの成分比の検討、或
いは、N-アルキル置換メラミン類、ベンゾグアナミン
等の添加、さらには、反応温度、反応時間等の縮合反応
条件の検討等により前記充填材の屈折率の微調整、及び
最適化が可能になるというものである。
The above-mentioned translucent organic substance is specifically an organic polymer such as one containing a condensation reaction product of melamine and formaldehyde and one containing a polymerization reaction product of methacrylic acid ester. A compound can be illustrated.
All of these can be obtained as a solid having a light-transmitting property, and if the one containing a condensation reaction product of melamine and formaldehyde is taken as an example, the component ratio of melamine and formaldehyde, which are the starting materials involved in the condensation reaction, Or the addition of N-alkyl-substituted melamines, benzoguanamine, etc., and further examination of condensation reaction conditions such as reaction temperature and reaction time, etc., enables fine adjustment and optimization of the refractive index of the filler. Is to be.

【0014】同様に、メタクリル酸エステルの重合反応
物を含んでなるものにおいても、重合反応に係る出発物
質であるメタクリル酸エステル等の成分の検討、或い
は、ジビニルベンゼン類等の添加等、さらには、反応温
度、反応時間等の重合反応条件の検討等により前記充填
材の屈折率の微調整、及び最適化が可能になるというも
のである。
Similarly, in the case of containing a polymerization reaction product of methacrylic acid ester, investigation of components such as methacrylic acid ester as a starting material for the polymerization reaction, addition of divinylbenzenes, etc. It is possible to finely adjust and optimize the refractive index of the filler by studying polymerization reaction conditions such as reaction temperature and reaction time.

【0015】更に、本発明の光半導体素子封止用エポキ
シ樹脂組成物においては、上述の透光性を有する有機物
よりなる充填材を、最大粒子径150ミクロン以下、且
つ、平均粒子径が0.1ミクロン以上、50ミクロン以
下であるように構成すれば、光学特性と成形性の両立化
が可能となることが判明した。即ち、最大粒径が150
ミクロン以上の場合では、成形時に未充填等の成形不具
合を発生しやすい一方、逆に、上記充填材の平均粒径が
0.1ミクロン以下の場合では相当多量の添加量を加え
ないと光透過性と拡散性の両立化が図れないため、成形
性に影響を及ぼし易い。一方、平均粒径が50ミクロン
以上の場合は、透明性、光透過率が著しく低下するため
好ましくない。
Further, in the epoxy resin composition for encapsulating an optical semiconductor device of the present invention, the filler made of the above-mentioned organic material having a light-transmitting property has a maximum particle diameter of 150 μm or less and an average particle diameter of 0. It has been found that the optical characteristics and the moldability can be made compatible with each other if the constitution is made to be 1 micron or more and 50 microns or less. That is, the maximum particle size is 150
When the average particle size of the above filler is 0.1 micron or less, light transmission is caused unless a considerably large amount is added. Since it is not possible to achieve both compatibility and diffusibility, it is easy to affect the formability. On the other hand, when the average particle size is 50 microns or more, the transparency and the light transmittance are significantly lowered, which is not preferable.

【0016】また、充填材として、これら有機物よりな
る充填材を用いることにより、金型摩耗の低減や金型破
損の防止に寄与し得る他、エポキシ樹脂組成物とこれら
有機物よりなる充填材の線膨張係数の差を充分小さく設
計できるために、樹脂組成物の成形品内部でのクラック
の低減や、応力集中の軽減による実装信頼性の向上を
も、併せて図ることができるというものである。
Further, by using a filler made of these organic substances as the filler, it is possible to contribute to the reduction of mold wear and the prevention of damage to the mold, and the line of the epoxy resin composition and the filler made of these organic substances. Since the difference in expansion coefficient can be designed to be sufficiently small, it is possible to reduce cracks inside the molded product of the resin composition and to improve mounting reliability by reducing stress concentration.

【0017】特に、発光素子、受光素子等の光半導体の
封止材料であるエポキシ樹脂組成物によるトランスファ
ーモールドでの樹脂封止の技術分野においては、これら
モールド後の後工程において、ハンダ実装時のハンダ濡
れ性向上、或いは、リードフレームを被覆する目的で、
リード部分にハンダコート或いはハンダメッキ等がなさ
れた光半導体装置が製品化されている。これらの光半導
体装置は、従来、ハンダディッピングによるリード挿入
実装によるものが主流であったが、近年の小型化、高密
度実装化への技術トレンドのシフトに伴い、IRリフロ
ーによる面実装化に対応し得るハンダ耐熱性の高い材料
のニーズが高まっており、エポキシ樹脂組成物とこれら
有機物よりなる充填材の線膨張係数の差が小さい本発明
に係る光半導体素子封止用エポキシ樹脂組成物は、かか
るニーズにも充分対応し得るものであるといえる。さら
に、このようにハンダ耐熱性の高い本発明に係る光半導
体素子封止用エポキシ樹脂組成物は、近年の地球環境へ
の負荷軽減の観点から、注目されている高融点の無鉛ハ
ンダを用いたアッセンブリーにも対応し得るものである
といえる。
In particular, in the technical field of resin encapsulation in transfer molding using an epoxy resin composition which is an encapsulating material for optical semiconductors such as light emitting elements and light receiving elements, in the post-molding step, solder mounting is performed in the subsequent steps. For the purpose of improving solder wettability or coating the lead frame,
An optical semiconductor device in which a lead portion is solder-coated or solder-plated has been commercialized. Conventionally, these optical semiconductor devices have been mainly mounted by lead insertion mounting by solder dipping, but with the recent shift in technology trends toward miniaturization and high-density mounting, they are compatible with surface mounting by IR reflow. There is an increasing need for materials having high solder heat resistance that can be used, and the epoxy resin composition for optical semiconductor element encapsulation according to the present invention has a small difference in linear expansion coefficient between the epoxy resin composition and the filler made of these organic materials, It can be said that it can sufficiently meet such needs. Furthermore, the epoxy resin composition for optical semiconductor element encapsulation according to the present invention having such high solder heat resistance uses a high melting point lead-free solder which has been attracting attention from the viewpoint of reducing the load on the global environment in recent years. It can be said that it can be applied to assembly.

【0018】一方、これら有機物よりなる充填材の粒子
形状が、略球状である光半導体素子封止用エポキシ樹脂
組成物を使用した場合には、粒子形状が破砕状の場合等
と比較して、さらなる金型摩耗の低減や充填材起因のチ
ップダメージの低減を図ることもできることとなる。
On the other hand, when the epoxy resin composition for encapsulating an optical semiconductor element in which the particle shape of the filler made of these organic substances is substantially spherical is used, compared with the case where the particle shape is crushed, It is possible to further reduce die wear and chip damage due to the filler.

【0019】さらに、本発明に係る光半導体素子封止用
エポキシ樹脂組成物にあっては、透光性、光拡散性、及
び良好な成形特性を確保するためには、上記有機物より
なる充填材の添加量はエポキシ樹脂組成物全体の0.5
〜30質量%の範囲内にあることが好ましい。即ち、添
加量が0.5質量%未満の時、光拡散性の充分な効果が
得られず、30質量%以上では、光透過率の著しい低下
や材料の成形時の流動性低下、ボイド等の成形不具合等
の問題を生じる恐れがあるからである。換言すれば、前
記充填材の添加量をエポキシ樹脂組成物全体の0.5〜
30質量%とすることにより、透光性、光拡散性、及び
良好な成形特性の確保が可能になるというものである。
Further, in the epoxy resin composition for encapsulating an optical semiconductor element according to the present invention, in order to secure translucency, light diffusibility and good molding characteristics, a filler made of the above organic substance is used. The amount added is 0.5 based on the total amount of the epoxy resin composition.
It is preferably in the range of -30% by mass. That is, when the added amount is less than 0.5% by mass, a sufficient effect of the light diffusivity cannot be obtained, and when the added amount is 30% by mass or more, the light transmittance is remarkably lowered, the fluidity is lowered during molding of the material, voids, etc. This is because there is a risk of causing problems such as molding defects. In other words, the amount of the filler added is 0.5 to 0.5% of the total amount of the epoxy resin composition.
By setting the content to 30% by mass, it is possible to secure the translucency, the light diffusion property, and the good molding characteristics.

【0020】[製法]上記エポキシ樹脂組成物は、エポ
キシ樹脂、硬化剤、硬化促進剤、充填材、更にはその他
添加剤成分を溶解混合又は、ミキサー、ブレンダー等で
均一に混合した後、3本ロール等で溶融混練し、これを
冷却、固化した後、粉砕し、必要ならタブレット状に打
錠することにより製造することができる。また、かかる
上記エポキシ樹脂組成物の性状が室温で液状の場合は、
溶解混合又は溶融混練により製造することができる。そ
して、このようにして得られたエポキシ樹脂組成物を、
固形の場合はタブレットをトランスファー成形して光半
導体素子の封止に用いることにより、また、液状の場合
は、キャスティングやポッティング、印刷等の方式で注
型、硬化させることにより、光半導体装置を製造するこ
とができる。
[Production Method] In the above epoxy resin composition, an epoxy resin, a curing agent, a curing accelerator, a filler, and other additive components are melt-mixed or uniformly mixed with a mixer, a blender or the like, and then three It can be produced by melt-kneading with a roll or the like, cooling and solidifying this, crushing, and if necessary, tableting into a tablet. When the properties of the above epoxy resin composition are liquid at room temperature,
It can be produced by melt mixing or melt kneading. Then, the epoxy resin composition thus obtained,
The optical semiconductor device is manufactured by transfer molding a tablet in the case of a solid and using it for encapsulating an optical semiconductor element, and in the case of a liquid, casting and curing by a method such as casting, potting, printing, etc. can do.

【0021】本発明に係る光半導体素子封止用エポキシ
樹脂組成物において、使用可能なエポキシ樹脂としては
1分子中に2個以上のエポキシ基を持っていれば特に制
限はないが、光半導体用エポキシ樹脂組成物には比較的
着色の少ないものが好ましい。例えば、ビスフェノール
A型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、
ビスフェノールS型エポキシ樹脂、オルトクレゾールノ
ボラック型エポキシ樹脂、脂環式エポキシ樹脂、トリグ
リシジルイソシアヌレート、脂肪族系エポキシ樹脂等が
挙げられる。また、上記の芳香族環を有するエポキシ樹
脂の芳香族環を水素添化したエポキシ樹脂等も使用可能
である。更にこれらのエポキシ樹脂を単独で用いても、
併用して用いても差し支えない。
In the epoxy resin composition for encapsulating an optical semiconductor element according to the present invention, the usable epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but it is for an optical semiconductor. It is preferable that the epoxy resin composition has relatively little coloring. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin,
Examples thereof include bisphenol S type epoxy resin, orthocresol novolac type epoxy resin, alicyclic epoxy resin, triglycidyl isocyanurate, and aliphatic epoxy resin. Further, an epoxy resin obtained by hydrogenating an aromatic ring of the above-mentioned epoxy resin having an aromatic ring can also be used. Furthermore, even if these epoxy resins are used alone,
It can be used together.

【0022】本発明に係る光半導体素子封止用エポキシ
樹脂組成物において、使用可能な硬化剤としては、上記
エポキシ樹脂と反応するものであれば特に制限はない
が、光半導体用エポキシ樹脂組成物には比較的着色の少
ないものが好ましい。例えば、無水ヘキサヒドロフタル
酸、無水テトラヒドロフタル酸等の酸無水物、フェノー
ル、クレゾール、キシレノール、レゾルシン等とホルム
アルデヒドとを縮合反応して得られるノボラック型フェ
ノール樹脂、液状ポリメルカプタンやポリサルファイド
樹脂等のポリメルカプタン系硬化剤、等がある。この他
にアミン系硬化剤も挙げられるが、硬化時の変色が大き
いため使用する際は添加量等に注意を要する。又、これ
らを単独でも併用して用いても差し支えない。これらの
エポキシ樹脂と硬化剤の当量比は、エポキシ/硬化剤当
量比が0.8乃至2.0であることが好ましい。
In the epoxy resin composition for optical semiconductor element encapsulation according to the present invention, usable curing agent is not particularly limited as long as it reacts with the above epoxy resin, but epoxy resin composition for optical semiconductors It is preferable to use those having relatively little coloring. For example, hexahydrophthalic anhydride, acid anhydride such as tetrahydrophthalic anhydride, phenol, cresol, xylenol, novolak type phenol resin obtained by condensation reaction with resorcin and formaldehyde, liquid polymercaptan or polysulfide resin There are mercaptan-based curing agents and the like. In addition to these, amine-based curing agents can also be used, but since the discoloration at the time of curing is large, it is necessary to pay attention to the addition amount when used. Further, these may be used alone or in combination. With respect to the equivalent ratio of these epoxy resin and curing agent, the epoxy / curing agent equivalent ratio is preferably 0.8 to 2.0.

【0023】本発明に係る光半導体素子封止用エポキシ
樹脂組成物において、使用可能な硬化促進剤としては、
エポキシ樹脂と硬化剤の反応を促進させる作用があるも
のであれば特に制限はないが、比較的着色の少ないもの
が好ましい。例えば、トリフェニルフォスフィン、ジフ
ェニルフォスフィン等の有機フォスフィン系硬化促進
剤、1,8−ジアザビシクロ(5,4,0)ウンデセン
−7〔1,8−Diazabicyclo[5.4.
0]undec−7−ene〕(DBU)、トリエタノ
ールアミン、ベンジルジメチルアミン等の3級アミン系
硬化促進剤、テトラフェニルホスホニウム・テトラフェ
ニルボレート、テトラフェニルホスホニウム・ブロマイ
ド等の有機塩類、1−ベンジル−2−フェニルイミダゾ
ール等のイミダゾール類等が挙げられる。また、これら
を単独でも併用して用いても差し支えない。また、これ
ら硬化促進剤の含有率は、0.05〜5.0質量%であ
るのが好ましい。添加量が0.01質量%以下の場合
は、エポキシ樹脂と硬化剤の反応の充分な促進効果が得
られず、硬化時間が長くなり、成形時間の短縮が図れな
い。また、硬化促進剤の含有率が、5.0質量%以上の
場合は、硬化時間が短くなりすぎるため、成形体中にボ
イドが発生したり、成形金型へのエポキシ樹脂組成物の
未充填等の成形工程における問題を引き起こす原因とも
なる。
In the epoxy resin composition for optical semiconductor element encapsulation according to the present invention, usable curing accelerators are:
There is no particular limitation as long as it has an action of promoting the reaction between the epoxy resin and the curing agent, but a resin having relatively little coloring is preferable. For example, organic phosphine-based curing accelerators such as triphenylphosphine and diphenylphosphine, 1,8-diazabicyclo (5,4,0) undecene-7 [1,8-Diazabicyclo [5.4.
0] undec-7-ene] (DBU), triethanolamine, benzyldimethylamine and other tertiary amine curing accelerators, tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / bromide and other organic salts, 1-benzyl Examples thereof include imidazoles such as 2-phenylimidazole. Further, these may be used alone or in combination. The content of these curing accelerators is preferably 0.05 to 5.0% by mass. When the addition amount is 0.01% by mass or less, a sufficient effect of accelerating the reaction between the epoxy resin and the curing agent cannot be obtained, the curing time becomes long, and the molding time cannot be shortened. Further, when the content of the curing accelerator is 5.0% by mass or more, the curing time becomes too short, so that voids are generated in the molded body or the epoxy resin composition is not filled in the molding die. It also causes problems in the molding process.

【0024】なお、本発明に係る光半導体素子封止用エ
ポキシ樹脂組成物においては、上記以外に必要に応じて
変色防止剤、劣化防止剤、染料、紫外線吸収剤、シラン
系カップリング剤、変性剤、可塑剤、希釈剤等を配合し
ても差し支えない。特に、上記した有機物よりなる充填
材においても、公知なシラン系カップリング剤(アミノ
シラン系、エポキシシラン系、メルカプトシラン系カッ
プリング剤等)で処理したものを使用することができ、
上記課題解決に寄与し得る限りにおいて、何ら制限がな
いことはいうまでもない。
In the epoxy resin composition for encapsulating an optical semiconductor element according to the present invention, in addition to the above, if necessary, a discoloration preventing agent, a deterioration preventing agent, a dye, an ultraviolet absorber, a silane coupling agent, a modifying agent. There is no problem even if agents, plasticizers, diluents and the like are added. In particular, even in the filler made of the above-mentioned organic material, it is possible to use a filler treated with a known silane coupling agent (aminosilane type, epoxysilane type, mercaptosilane type coupling agent, etc.),
It goes without saying that there is no limitation as long as it can contribute to solving the above problems.

【0025】一方、本発明の光半導体素子封止用エポキ
シ樹脂組成物を用いて光半導体素子を封止した光半導体
装置としては、発光部を備えた光半導体素子を有し、本
発明の光半導体素子封止用エポキシ樹脂組成物で、かか
る光半導体素子を封止してなるもの等を例示することが
できる。
On the other hand, as an optical semiconductor device in which an optical semiconductor element is encapsulated by using the epoxy resin composition for encapsulating an optical semiconductor element of the present invention, an optical semiconductor element having a light emitting portion is provided, and the optical semiconductor element of the present invention is used. Examples of the epoxy resin composition for semiconductor element encapsulation include those obtained by encapsulating such an optical semiconductor element.

【0026】図1は、このような本発明の光半導体装置
の代表的実施形態を示す断面図である。即ち、図1にお
いて、光半導体装置1は、電極2、電極3と金属ワイヤ
4で電気的に接続された発光部8を備えた半導体素子で
あるLEDチップ5を電極2の上に搭載し、これを本発
明の光半導体素子封止用エポキシ樹脂組成物の硬化物6
で封止し、ケース7の中に収めたものである。このよう
な本発明の光半導体素子封止用エポキシ樹脂組成物を用
いて光半導体素子を封止した光半導体装置にあっては、
良好な透光性とともに充分な光拡散性が確保された光半
導体装置の封止が可能になり、光透過性のみならず、光
拡散性や光干渉防止性等が要求されるデバイスへの応用
等、上述の新たなニーズにも対応できることとなる。
FIG. 1 is a sectional view showing a typical embodiment of such an optical semiconductor device of the present invention. That is, in FIG. 1, an optical semiconductor device 1 mounts an LED chip 5, which is a semiconductor element having an electrode 2, an electrode 3 and a light emitting portion 8 electrically connected to a metal wire 4, on the electrode 2, This is a cured product 6 of the epoxy resin composition for optical semiconductor element encapsulation of the present invention.
It is sealed in and enclosed in the case 7. In an optical semiconductor device in which an optical semiconductor element is encapsulated by using the epoxy resin composition for encapsulating an optical semiconductor element of the present invention,
Enables encapsulation of optical semiconductor devices that ensure good light transmission and sufficient light diffusion, and is applied to devices that require not only light transmission but also light diffusion and optical interference prevention. It is possible to meet the new needs mentioned above.

【0027】[0027]

【実施例】以下、エポキシ樹脂、硬化剤、硬化促進剤、
充填材等を配合してなる本発明に係る光半導体素子封止
用エポキシ樹脂組成物の評価を行なった。これを以下の
実施例によって具体的に説明する。
[Examples] Epoxy resin, curing agent, curing accelerator,
The epoxy resin composition for encapsulating an optical semiconductor element according to the present invention, which contains a filler and the like, was evaluated. This will be specifically described by the following examples.

【0028】(樹脂組成物の調製)エポキシ樹脂(表1
中の成分A)として、ビスフェノールA型エポキシ樹脂
であるジャパンエポキシレジン(株)製「エピコート1
001」(当量475)を用いた。硬化剤(表1中の成
分B)としては、新日本理化(株)製「THPA」(当
量152)を用いた。更に、硬化促進剤(表1中の成分
C)として、1−ベンジル−2−フェニルイミダゾール
を用いた。なお、充填材として用いた無アルカリガラス
(屈折率:1.583)[比較例]は、ガラスの成分調整
により、上記のエポキシ樹脂、硬化剤、及び硬化促進剤
よりなる硬化物との屈折率の差が、±0.01以内にな
るように屈折率を調整したものを使用した。一方、充填
材として用いた”透光性を有する有機物”としては、上
述した方法により、上記のエポキシ樹脂、硬化剤、及び
硬化促進剤よりなる硬化物(表1中、樹脂成分(成分A
+成分B+成分C)のみの硬化物)との屈折率の差が、±
0.01以上になるように屈折率を調整した”メラミン
とホルムアルデヒドとの縮合反応物を含んでなるもの
(以下、「メラミン系有機充填材」という。)”、及
び、同様の屈折率調整を施した”メタクリル酸エステル
の重合反応物を含んでなるもの(以下、「PMMA系有
機充填材」という。)”を使用した。
(Preparation of Resin Composition) Epoxy Resin (Table 1
As component A) therein, "Epicoat 1" which is a bisphenol A type epoxy resin manufactured by Japan Epoxy Resin Co., Ltd.
001 ”(equivalent 475) was used. As the curing agent (Component B in Table 1), "THPA" (equivalent weight 152) manufactured by Shin Nippon Rika Co., Ltd. was used. Furthermore, 1-benzyl-2-phenylimidazole was used as a curing accelerator (component C in Table 1). The alkali-free glass (refractive index: 1.583) used as the filler [Comparative Example] has a refractive index with the cured product composed of the above epoxy resin, curing agent, and curing accelerator, by adjusting the glass components. The refractive index was adjusted so that the difference was within ± 0.01. On the other hand, the "translucent organic substance" used as the filler is a cured product (resin component (component A in Table 1) composed of the above-mentioned epoxy resin, curing agent, and curing accelerator, obtained by the method described above.
+ Component B + component C) cured product only)
The refractive index is adjusted to be 0.01 or more, "containing a condensation reaction product of melamine and formaldehyde (hereinafter referred to as" melamine-based organic filler ")", and similar refractive index adjustment. The "comprising the methacrylic acid ester polymerization reaction product (hereinafter referred to as" PMMA-based organic filler ")" was used.

【0029】そして、上記のエポキシ樹脂、硬化剤、硬
化促進剤、充填材を表1に示す質量比で配合し、カップ
リング剤を加えた後、プラネタリーミキサー等により、
撹拌、混合、分散を行うことによって、実施例1〜2及
び比較例のエポキシ樹脂組成物を得た。
Then, the epoxy resin, the curing agent, the curing accelerator, and the filler described above were mixed in a mass ratio shown in Table 1, a coupling agent was added, and then the mixture was mixed with a planetary mixer or the like.
The epoxy resin compositions of Examples 1 and 2 and Comparative Example were obtained by stirring, mixing and dispersing.

【0030】(評価)上記エポキシ樹脂組成物硬化物に
ついて、テストピースを作製し、屈折率、光透過率
[%]、光反射率[%]、実装信頼性についての評価を行な
い、その結果を表1に示した。
(Evaluation) A test piece was prepared from the cured product of the epoxy resin composition, and the refractive index and the light transmittance were measured.
[%], Light reflectance [%], and mounting reliability were evaluated, and the results are shown in Table 1.

【0031】なお、テストピース(充填材を配合したも
の、充填材を配合しないもの共に)は総て、金型温度1
50℃、硬化時間2分で上記エポキシ樹脂組成物をトラ
ンスファー成形した後、150℃で2時間ポストキュア
することにより作製した。また、屈折率については、屈
折率測定器を用い上記テストピース(充填材を配合しな
いもの)の屈折率をアッベ法により測定した。
All the test pieces (both with and without filler) had a mold temperature of 1
The epoxy resin composition was transfer-molded at 50 ° C. for 2 minutes for curing, and then post-cured at 150 ° C. for 2 hours to prepare. With respect to the refractive index, the refractive index of the above test piece (which does not contain a filler) was measured by an Abbe method using a refractive index measuring device.

【0032】さらに、光透過率については、積分球型分
光光度計((株)島津製作所製)を用い、厚み1mmの
テストピース(充填材を配合したもの)の700〜11
00nmの波長範囲での光透過率[%]を求め、これが、
30〜85%のものを○、85%以上のものを●、30
%未満のものを×とした。
Further, regarding the light transmittance, an integrating sphere type spectrophotometer (manufactured by Shimadzu Corporation) was used, and 700 to 11 of a 1 mm-thick test piece (containing a filler) was used.
The light transmittance [%] in the wavelength range of 00 nm is calculated, and this is
30 to 85% for ○, 85% or more for ●, 30
Those less than% were defined as x.

【0033】光反射率についても、積分球型分光光度計
((株)島津製作所製)を用い、厚み1mmのテストピ
ース(充填材を配合したもの)の700〜1100nm
の波長範囲での光反射率[%]を求め、これが、2〜70
%のものを○、70%以上のものを●、2%未満のもの
を×とした。
Regarding the light reflectance, an integrating sphere type spectrophotometer (manufactured by Shimadzu Corp.) was used to measure a test piece having a thickness of 1 mm (containing a filler) at 700 to 1100 nm.
The light reflectance [%] in the wavelength range of
% Is ◯, 70% or more is ●, and less than 2% is x.

【0034】一方、実装信頼性については、光ピックア
ップPKG(4mm×5mm×1.8mm)を用いテス
トピース(充填材を配合したもの)に対して、温度85
℃、湿度85%の条件で20時間の吸湿処理を施した
後、260℃ピークのリフローテスト処理を行ない、剥
離、クラックの有無を顕微鏡観察で確認し、これらの不
良を有するテストピースの個数の前供試テストピース個
数に占める割合を不良率[%]とし、これが、0%のもの
を○、5%未満のものを△、5%以上のものを×とし
た。
On the other hand, regarding the mounting reliability, the optical pickup PKG (4 mm × 5 mm × 1.8 mm) was used, and a temperature of 85 was applied to the test piece (containing the filler).
After performing a moisture absorption treatment for 20 hours at a temperature of 85 ° C and a humidity of 85%, a reflow test treatment of 260 ° C peak is performed, and the presence or absence of peeling and cracks is confirmed by observing with a microscope to check the number of test pieces having these defects. The percentage of the number of pre-test sample pieces was defined as a defect rate [%], and 0% was ○, less than 5% was Δ, and 5% or more was ×.

【0035】[0035]

【表1】 表1の充填材として、メラミン系有機充填材を使用した
実施例1、充填材として、PMMA系有機充填材を使用
した実施例2の評価結果より、上記のエポキシ樹脂、硬
化剤、及び硬化促進剤よりなる硬化物の屈折率と、充填
材の屈折率の差が、±0.01以上であり、且つ、厚み
1mmの前記光半導体素子封止用エポキシ樹脂組成物の
硬化物よりなる成形品の光透過率が、30〜85%の範
囲内、光反射率が、2〜70%の範囲内にあり、光透過
性と光拡散性の両立化が図られた光半導体素子封止用エ
ポキシ樹脂組成物の材料設計が可能であり、その結果、
良好な透光性とともに充分な光拡散性の確保が可能にな
ることが明らかとなった。
[Table 1] From the evaluation results of Example 1 in which a melamine-based organic filler was used as the filler in Table 1 and Example 2 in which the PMMA-based organic filler was used as the filler, the above epoxy resin, curing agent, and curing acceleration were obtained. The difference between the refractive index of the cured product composed of the agent and the refractive index of the filler is ± 0.01 or more, and the molded product is composed of the cured product of the epoxy resin composition for optical semiconductor element encapsulation having a thickness of 1 mm. Has a light transmittance of 30 to 85% and a light reflectance of 2 to 70%, and achieves both light transmittance and light diffusivity. Material design of resin composition is possible, and as a result,
It has been clarified that it is possible to secure a sufficient light diffusion property as well as a good light transmission property.

【0036】また、本発明に係る光半導体素子封止用エ
ポキシ樹脂組成物において、充填材が、少なくとも、メ
ラミンとホルムアルデヒドとの縮合反応物を含んでなる
上記メラミン系有機充填材を使用することにより、透光
性を確保しつつ、縮合反応における出発物質の成分及び
成分比の検討、或いは縮合反応条件の検討等による前記
充填材の屈折率の調整により光半導体素子封止用エポキ
シ樹脂組成物の光透過性と光拡散性の最適化が可能にな
ることが明らかとなった。
Further, in the epoxy resin composition for encapsulating an optical semiconductor element according to the present invention, by using the above-mentioned melamine-based organic filler in which the filler contains at least a condensation reaction product of melamine and formaldehyde. Of the epoxy resin composition for optical semiconductor element encapsulation by adjusting the refractive index of the filler by examining the components and component ratios of the starting materials in the condensation reaction, or examining the condensation reaction conditions while ensuring the translucency. It has become clear that optimization of light transmission and light diffusion is possible.

【0037】更に、本発明に係る光半導体素子封止用エ
ポキシ樹脂組成物において、充填材が、少なくとも、メ
タクリル酸エステルの重合反応物を含んでなる上記PM
MA系有機充填材を使用することにより、透光性を確保
しつつ、重合反応における出発物質の成分及び成分比の
検討、或いは重合反応条件の検討等による前記充填材の
屈折率の調整により光半導体素子封止用エポキシ樹脂組
成物の光透過性と光拡散性の最適化が可能になることが
明らかとなった。
Further, in the epoxy resin composition for encapsulating an optical semiconductor element according to the present invention, the filler contains at least the polymerization reaction product of methacrylic acid ester.
By using the MA-based organic filler, while maintaining the light-transmitting property, it is possible to adjust the refractive index of the filler by studying the components and component ratios of the starting materials in the polymerization reaction or by studying the polymerization reaction conditions. It has been clarified that the light transmittance and the light diffusivity of the epoxy resin composition for semiconductor element encapsulation can be optimized.

【0038】したがって、このような特性を有する本発
明の光半導体素子封止用エポキシ樹脂組成物を用いて光
半導体素子を封止した光半導体装置においては、良好な
透光性とともに充分な光拡散性が確保された光半導体装
置の封止が可能になり、光透過性のみならず、光拡散性
や光干渉防止性等が要求されるデバイスへの応用等、上
述の新たなニーズにも対応できることとなる。
Therefore, in an optical semiconductor device in which an optical semiconductor element is encapsulated by using the epoxy resin composition for encapsulating an optical semiconductor element of the present invention having such characteristics, good light transmittance and sufficient light diffusion are obtained. It is possible to seal the optical semiconductor device that secures the property, and respond to the above new needs such as application to devices that require not only light transmission but also light diffusion and light interference prevention. It will be possible.

【0039】[0039]

【発明の効果】以上のように、本発明の請求項1〜請求
項2に係る光半導体素子封止用エポキシ樹脂組成物にあ
っては、エポキシ樹脂、硬化剤、及び硬化促進剤を含有
していて、且つ、透光性を有する有機物よりなる充填材
を用いてなる光半導体素子封止用エポキシ樹脂組成物で
あって、前記エポキシ樹脂、前記硬化剤、及び前記硬化
促進剤よりなる硬化物の屈折率と、前記充填材の屈折率
が異なり、前記エポキシ樹脂、前記硬化剤、及び前記硬
化促進剤よりなる硬化物の屈折率と、前記充填材の屈折
率の差が、±0.01以上であり、且つ、厚み1mmの
前記光半導体素子封止用エポキシ樹脂組成物の硬化物よ
りなる成形品の光透過率が、30〜85%、光反射率
が、2〜70%であることを特徴とするので、良好な透
光性とともに充分な光拡散性の確保が可能になるという
優れた効果を奏する。
As described above, the epoxy resin composition for optical semiconductor element encapsulation according to claims 1 and 2 of the present invention contains an epoxy resin, a curing agent, and a curing accelerator. And an epoxy resin composition for encapsulating an optical semiconductor element, which comprises a filler made of a translucent organic material, wherein the epoxy resin, the curing agent, and the curing accelerator are cured products. And the refractive index of the filler are different, and the difference between the refractive index of the cured material made of the epoxy resin, the curing agent, and the curing accelerator and the refractive index of the filler is ± 0.01. The light transmittance of the molded product made of the cured product of the epoxy resin composition for optical semiconductor element encapsulation having a thickness of 1 mm is 30 to 85% and the light reflectance is 2 to 70%. It is characterized by good translucency and sufficient light. Dispersion of ensuring an excellent effect that it becomes possible.

【0040】請求項3に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1または請求項2記載
の光半導体素子封止用エポキシ樹脂組成物において、前
記充填材が、少なくとも、メラミンとホルムアルデヒド
との縮合反応物を含んでなることを特徴とするので、透
光性を確保しつつ、縮合反応における出発物質の成分及
び成分比の検討、或いは縮合反応条件の検討等による前
記充填材の屈折率の調整により光半導体素子封止用エポ
キシ樹脂組成物の光透過性と光拡散性の最適化が可能に
なるという優れた効果を奏する。
In the epoxy resin composition for encapsulating an optical semiconductor element according to claim 3, in the epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 or 2, the filler is at least , Which comprises a condensation reaction product of melamine and formaldehyde, so as to secure the translucency, the components of the starting materials and the component ratio in the condensation reaction, or by examining the condensation reaction conditions, etc. By adjusting the refractive index of the filler, it is possible to optimize the light transmittance and light diffusivity of the epoxy resin composition for optical semiconductor element encapsulation.

【0041】請求項4に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1または請求項2記載
の光半導体素子封止用エポキシ樹脂組成物において、前
記充填材が、少なくとも、メタクリル酸エステルの重合
反応物を含んでなることを特徴とするので、透光性を確
保しつつ、重合反応における出発物質の成分及び成分比
の検討、或いは重合反応条件の検討等による前記充填材
の屈折率の調整により光半導体素子封止用エポキシ樹脂
組成物の光透過性と光拡散性の最適化が可能になるとい
う優れた効果を奏する。
In the epoxy resin composition for encapsulating an optical semiconductor element according to claim 4, in the epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 or 2, the filler is at least Since it contains a polymerization reaction product of methacrylic acid ester, while ensuring the light-transmitting property, the above-mentioned filling by examining the components and component ratios of the starting materials in the polymerization reaction, or by examining the polymerization reaction conditions, etc. By adjusting the refractive index of the material, it is possible to optimize the light transmittance and the light diffusivity of the epoxy resin composition for optical semiconductor element encapsulation.

【0042】請求項5に係る光半導体素子封止用エポキ
シ樹脂組成物にあっては、請求項1乃至請求項4のいず
れかに記載の光半導体素子封止用エポキシ樹脂組成物に
おいて、前記充填材の添加量がエポキシ樹脂組成物全体
の0.5〜30質量%であることを特徴とするので、透
光性、光拡散性、及び良好な成形特性の確保が可能にな
るという優れた効果を奏する。
The epoxy resin composition for encapsulating an optical semiconductor element according to claim 5 is the epoxy resin composition for encapsulating an optical semiconductor element according to any one of claims 1 to 4. Since the amount of the material added is 0.5 to 30% by mass of the whole epoxy resin composition, it is possible to ensure the translucency, the light diffusivity, and the good molding characteristics. Play.

【0043】請求項6に係る光半導体装置にあっては、
請求項1乃至請求項5のいずれかに記載の光半導体素子
封止用エポキシ樹脂組成物を用いて光半導体素子を封止
してなることを特徴とするので、良好な透光性とともに
充分な光拡散性が確保された光半導体装置の封止が可能
になるという優れた効果を奏する。
In the optical semiconductor device according to claim 6,
An optical semiconductor element is encapsulated by using the epoxy resin composition for encapsulating an optical semiconductor element according to any one of claims 1 to 5, so that good optical transparency and sufficient optical transparency can be obtained. The excellent effect that the optical semiconductor device in which the light diffusion property is secured can be sealed is exhibited.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の光半導体装置の代表的実施形態を示す
断面図である。
FIG. 1 is a sectional view showing a typical embodiment of an optical semiconductor device of the present invention.

【符号の説明】[Explanation of symbols]

1 光半導体装置 2 電極 3 電極 4 金属ワイヤ 5 LEDチップ 6 エポキシ樹脂組成物硬化物 7 ケース 8 発光部 1 Optical semiconductor device 2 electrodes 3 electrodes 4 metal wire 5 LED chip 6 Epoxy resin composition cured product 7 cases 8 light emitting part

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 33/00 H01L 23/30 F (72)発明者 櫛田 孝則 大阪府門真市大字門真1048番地松下電工株 式会社内 Fターム(参考) 4J002 BG052 CC033 CC043 CC053 CC063 CC182 CD021 CD051 CD061 CD141 EL136 EN027 EN107 EU117 EU137 EW177 FD012 FD143 FD146 FD157 GP03 GQ05 HA05 4M109 AA01 BA01 CA21 EA02 EB02 EB04 EB11 GA01 5F041 AA07 DA18 DA44 DA56 DA58 DB01 FF11 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 33/00 H01L 23/30 F (72) Inventor Takanori Kushida 1048 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Works Ltd. Formula In-house F-term (reference) 4J002 BG052 CC033 CC043 CC053 CC063 CC182 CD021 CD051 CD061 CD141 EL136 EN027 EN107 EU117 EU137 EW177 FD012 FD143 FD146 FD157 GP03 GQ05 HA05 4M109 AA01 BA01 CA21 EA02 EB02 DA01 DA04 EA02 EA04 EB02 EA04 EB02 EA04 EB02 EA04 EB02 EA04 EB02 EA04 EB02 EA04 EB02 EA04 EB02 EA02 EB04 EF02

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 エポキシ樹脂、硬化剤、及び硬化促進剤
を含有していて、且つ、透光性を有する有機物よりなる
充填材を用いてなる光半導体素子封止用エポキシ樹脂組
成物であって、前記エポキシ樹脂、前記硬化剤、及び前
記硬化促進剤よりなる硬化物の屈折率と、前記充填材の
屈折率が異なることを特徴とする光半導体素子封止用エ
ポキシ樹脂組成物。
1. An epoxy resin composition for optical semiconductor element encapsulation, comprising an epoxy resin, a curing agent, and a curing accelerator, and using a filler made of a light-transmitting organic material. An epoxy resin composition for optical-semiconductor element encapsulation, wherein a refractive index of a cured product composed of the epoxy resin, the curing agent, and the curing accelerator is different from that of the filler.
【請求項2】 前記エポキシ樹脂、前記硬化剤、及び前
記硬化促進剤よりなる硬化物の屈折率と、前記充填材の
屈折率の差が、±0.01以上であり、且つ、厚み1m
mの前記光半導体素子封止用エポキシ樹脂組成物の硬化
物よりなる成形品の光透過率が、30〜85%、光反射
率が、2〜70%であることを特徴とする請求項1記載
の光半導体素子封止用エポキシ樹脂組成物。
2. The difference between the refractive index of the cured material composed of the epoxy resin, the curing agent, and the curing accelerator and the refractive index of the filler is ± 0.01 or more, and the thickness is 1 m.
The light transmittance of the molded product made of the cured product of the epoxy resin composition for optical semiconductor element encapsulation of m is 30 to 85%, and the light reflectance is 2 to 70%. An epoxy resin composition for encapsulating an optical semiconductor element as described in the above.
【請求項3】 前記充填材が、少なくとも、メラミンと
ホルムアルデヒドとの縮合反応物を含んでなることを特
徴とする請求項1または請求項2記載の光半導体素子封
止用エポキシ樹脂組成物。
3. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 or 2, wherein the filler contains at least a condensation reaction product of melamine and formaldehyde.
【請求項4】 前記充填材が、少なくとも、メタクリル
酸エステルの重合反応物を含んでなることを特徴とする
請求項1または請求項2記載の光半導体素子封止用エポ
キシ樹脂組成物。
4. The epoxy resin composition for optical semiconductor element encapsulation according to claim 1, wherein the filler contains at least a methacrylic acid ester polymerization reaction product.
【請求項5】 前記充填材の添加量がエポキシ樹脂組成
物全体の0.5〜30質量%であることを特徴とする請
求項1乃至請求項4のいずれかに記載の光半導体素子封
止用エポキシ樹脂組成物。
5. The optical semiconductor element encapsulation according to claim 1, wherein the amount of the filler added is 0.5 to 30% by mass of the whole epoxy resin composition. Epoxy resin composition for use.
【請求項6】 請求項1乃至請求項5のいずれかに記載
の光半導体素子封止用エポキシ樹脂組成物を用いて光半
導体素子を封止してなる光半導体装置。
6. An optical semiconductor device obtained by encapsulating an optical semiconductor element using the epoxy resin composition for encapsulating an optical semiconductor element according to any one of claims 1 to 5.
JP2002084810A 2002-03-26 2002-03-26 Epoxy resin composition for optical semiconductor element sealing and optical semiconductor device Expired - Lifetime JP4010841B2 (en)

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Country Link
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006051803A1 (en) * 2004-11-09 2006-05-18 Idemitsu Kosan Co., Ltd. Optical semiconductor sealing material
JP2007109915A (en) * 2005-10-14 2007-04-26 Stanley Electric Co Ltd Light emitting diode
CN113308086A (en) * 2020-02-27 2021-08-27 日东电工株式会社 Resin molded article for optical semiconductor encapsulation, optical semiconductor encapsulating material, and optical semiconductor device
CN114539721A (en) * 2022-01-05 2022-05-27 广东盈骅新材料科技有限公司 Epoxy resin composition for diffusion plate, prepreg and preparation method and application thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006051803A1 (en) * 2004-11-09 2006-05-18 Idemitsu Kosan Co., Ltd. Optical semiconductor sealing material
US8648160B2 (en) 2004-11-09 2014-02-11 Idemitsu Kosan Co., Ltd. Optical semiconductor sealing material
JP2007109915A (en) * 2005-10-14 2007-04-26 Stanley Electric Co Ltd Light emitting diode
CN113308086A (en) * 2020-02-27 2021-08-27 日东电工株式会社 Resin molded article for optical semiconductor encapsulation, optical semiconductor encapsulating material, and optical semiconductor device
CN114539721A (en) * 2022-01-05 2022-05-27 广东盈骅新材料科技有限公司 Epoxy resin composition for diffusion plate, prepreg and preparation method and application thereof

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