JP2003185674A - Probe unit and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe unit that has heat resistance and is accurately formed, and to provide a method for manufacturing the probe unit. <P>SOLUTION: The manufacturing method for the probe unit includes a process for forming a first resist on the surface of a first sacrifice film, a process for forming an opening on the fires sacrifice film, a process for removing the first resist, a process for forming a second sacrifice film on the first sacrifice film and the surface of a substrate, a process for forming a plating seed layer on the surface of the second sacrifice film, a process for forming a second probe- pin-like resist on the surface of the plating seed layer, a process for forming a probe pin composed of a steeple-like or knife-edge-like projection and projection support section by plating, a process for removing the second resist, and a process for directly joining a support substrate onto the surface of the probe pin, and a process for removing a plating seed layer. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe unit which is connected to an electrode or a terminal portion of an electronic component such as a semiconductor integrated circuit or a liquid crystal panel and is used for an energization test of the electrode and a manufacturing method thereof.

[0002]

2. Description of the Related Art Generally, semiconductor integrated circuits, liquid crystal panels,
As a product inspection for a printed circuit board or the like, an energization test is performed in order to confirm whether or not they operate according to required specifications. In this energization test, the tip of the probe unit and the protrusions formed in the vicinity of
It is performed by pressing against electrodes arranged in parallel on a liquid crystal panel, a printed circuit board or the like. By the way, the electrode layers arranged in parallel on the edge of the glass plate constituting the liquid crystal panel tend to have a finer pitch. In the energization test of such a liquid crystal panel, it is necessary for the energization test apparatus to provide a probe unit having a pitch corresponding to the electrode layer having the fine pitch. At present, the pitch of the electrode layers is 0.1 mm or less, and it is difficult to mechanically punch and form a probe unit corresponding thereto. Therefore, a method of forming the probe unit by an etching method or a plating forming method is used.

As a method of manufacturing such a probe unit, for example, in Japanese Patent Publication No. 8-50146, anisotropic etching of a silicon substrate is used to form a quadrangular pyramid at the tip of a probe pin constituting the probe unit. A method of forming a protrusion has been proposed.

Further, in Japanese Patent Publication No. 6-230030, a quadrangular pyramid-shaped protrusion is formed at the tip of the probe pin forming the probe unit by anisotropic etching of a silicon substrate. A method of forming a probe pin by forming a metal thin film on the surface of the portion forming the probe pin has been proposed.

Further, Japanese Patent Publication No. 8-220140 proposes a method of forming a protrusion at the tip of a probe pin by ball bump using wire bond.

Further, in Japanese Patent Publication No. 5-2111218, a convex mold is used to form a concave mold, and a metal layer is grown in the mold by a method such as plating. There has been proposed a method of forming a protrusion on the tip portion of the probe pin.

[0007]

However, in the method described in Japanese Patent Publication No. 8-50146, in order to make the quadrangular pyramid-shaped protrusions of the probe pin into a shape that does not easily damage the electrode, machining is performed again. There was a problem that it had to be applied. Further, there is a problem in that the precision of machining a minute component such as a probe pin is low. further,
The anisotropic etching has a problem that it takes a long time and the shape of the quadrangular pyramid is deformed due to foreign matters and stains in the etching solution.

Further, in the method described in Japanese Patent Publication No. 6-230030, since the metal thin film is formed on the surface of the silicon substrate, the probe pin is warped due to the difference between the stresses of the two, and the probe pin is warped during the energization test. However, there is a problem that the electrical contact between the inspection object and the probe pin becomes unstable.

Further, according to the method disclosed in Japanese Patent Publication No. 8-220140, only soft materials such as gold and aluminum can be used as bump materials.
It was difficult to form a probe pin for inspecting a fine electrode pattern having a pitch of 00 μm or less.

Further, in the method described in Japanese Patent Publication No. 5-21218, there is a problem in that the precision is poor because it is the machining of minute parts.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a probe unit having heat resistance and formed with high precision, and a method for manufacturing the same.

[0012]

The problem is a probe unit comprising a probe pin, a lead-out wiring, and a support substrate for supporting the probe pin and the lead-out wiring, wherein the probe pin is a pinnacle. It can be solved by a probe unit which is composed of a protrusion in the shape of a knife or an edge of a knife and a protrusion support that supports the protrusion, and the protrusion support is connected to the extraction wiring. The above-mentioned subject is a probe pin, wiring for extraction,
A probe unit comprising: a support substrate that supports the probe pin and the lead-out wiring, wherein the probe pin includes a spire-shaped or knife-edge-shaped projection and a projection support that supports the projection. It is possible to solve the problem by the probe unit configured so that the protrusion support portion is connected to the lead-out wiring via the protrusion portion. The protrusion forming the probe pin is formed of any material selected from tungsten, molybdenum, tungsten silicide, molybdenum silicide, tungsten carbide, titanium nitride, nickel, nickel alloys such as nickel iron. Is preferred.

The protrusions constituting the probe pins are formed on the sacrificial film by forming a sacrificial film on a substrate having an opening or by forming a sacrificial film on a mold layer having a concave portion. In addition, it is preferable that it is obtained by filling the material with the above-mentioned material, and that the projection supporting portion is obtained by continuously forming from the projection portion.

The above-mentioned problems include the step of forming a first resist having a first opening on the surface of the substrate on which the first sacrificial film is formed, and the step of forming the first resist in the first opening of the first resist. Removing the first sacrificial film to form a second opening in the first sacrificial film, removing the first resist, and removing the first sacrificial film and the surface of the substrate. Forming a second sacrificial film and forming a recess in a portion of the second sacrificial film formed in the second opening; and forming a plating seed layer on the surface of the second sacrificial film. A step of forming a probe pin-shaped second resist on the surface of the plating seed layer, and forming a probe pin composed of a protrusion and a protrusion support by plating in the opening of the second resist. And a step of removing the second resist, It can be solved and bonding a supporting substrate to the surface of the pins directly, by the method for manufacturing a probe unit and a step of removing the plating seed layer. In the method of manufacturing the probe unit, it is preferable that after the step of removing the plating seed layer, a step of bonding a flexible printed circuit board to the surface of the support substrate with an anisotropic conductive film is included. In the method of manufacturing the probe unit, it is preferable that after the step of removing the plating seed layer, a step of joining an electrode formed on the surface of the flexible printed circuit board to a protrusion forming the probe pin is included.

The above-mentioned problem is to form a first resist having a first opening on the surface of the first substrate on which the first sacrificial film is formed, and to form the first resist of the first resist. A step of removing the first sacrificial film in the opening to form a second opening in the first sacrificial film; a step of removing the first resist; Forming a second sacrificial film on the surface of the substrate and forming a recess in a portion of the second sacrificial film formed in the second opening; and forming a recess on the surface of the second sacrificial film. C having a mold part that forms a protrusion that constitutes a probe pin at a portion corresponding to the recess C
A step of forming a VD seed layer, a step of forming a refractory metal layer on the surface of the CVD seed layer, and a step of etching the refractory metal layer to leave the refractory metal layer only in the mold part. And a step of forming a second resist film in the shape of a protrusion supporting portion forming a probe pin on the surface of the CVD seed layer, and a step of forming the protrusion supporting portion by plating in the opening of the second resist. And a method of manufacturing a probe unit including a step of removing the second resist, a step of directly bonding a support substrate to the surface of the protrusion supporting portion, and a step of removing the CVD seed layer. In the method for manufacturing the probe unit, it is preferable that after the step of removing the CVD seed layer, a step of bonding a flexible printed board to the surface of the support substrate with an anisotropic conductive film is included. In the method for manufacturing the probe unit, it is preferable that the method includes a step of, after the step of removing the CVD seed layer, a step of joining an electrode formed on the surface of the flexible printed circuit board to the protrusions forming the probe pin.

In the method of manufacturing the probe unit, after the step of removing the second resist, the C
It is preferable to include a step of anisotropically removing the VD seed layer by etching, a step of directly bonding a support substrate to the surface of the protrusion supporting portion, and a step of removing the second sacrificial film. In the method for manufacturing the probe unit, it is preferable that after the step of removing the CVD seed layer, a step of bonding a flexible printed board to the surface of the support substrate with an anisotropic conductive film is included. In the method of manufacturing the probe unit, it is preferable that after the step of removing the CVD seed layer, a step of joining an electrode formed on the surface of the flexible printed circuit board to a protrusion forming the probe pin is included.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention is described in detail below.
1 and 2 are schematic sectional views showing a first embodiment of the method for manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment, first, as shown in FIG.
As shown in (a), the CVD device,
Using a sputtering device, etc., use silicon dioxide (Si
O ₂ ), silicon nitride (SiN _x ), silicon (Si), aluminum (Al), an aluminum alloy, and other anisotropically etchable materials having a thickness of about 1 to 30 μm. Form. The substrate 1 is not particularly limited, but a glass plate having a thickness of about 0.3 mm to several mm,
A synthetic resin plate, a ceramics plate, silicon, a metal plate or the like is used.

Next, as shown in FIG. 1B, a photoresist is applied on the surface of the first sacrificial film 2, a mask having an arbitrary shape is arranged on the surface of the photoresist, and baking is performed. Then, development processing is performed to remove unnecessary photoresist, and the first resist film 3 having an arbitrary shape is formed. At this time, the first resist film 3 is provided with one or more openings 3a having a diameter of about 6 to 10 μm. Also,
The thickness of the first resist film 3 is preferably 0.5 to 20 μm. The photoresist used as the first resist film 3 is a resin that undergoes a cross-linking reaction with high sensitivity when exposed to light or ultraviolet rays to cure, and the unexposed portion is solubilized (negative type) in a solvent, and has a high resolution arbitrary shape. It is a resin that can form. In this embodiment, for example, a chemically amplified negative resist is used as the photoresist, and a TMAH (tetramethylammonium hydroxide) aqueous solution is used as the developer. A positive resist may be used instead of the negative resist. By thus forming the first resist film 3 using the photoresist, it is possible to accurately form the position and size of the pinnacle-shaped or knife-edge-shaped protrusion formed on the probe pin that constitutes the probe unit. You can

Next, as shown in FIG. 1C, a portion of the first sacrificial test 2 which is not covered with the first resist film 3 is anisotropically etched by a reactive ion etching method. Then, the opening 2a is formed in the first sacrificial film 2.

Next, as shown in FIG. 1D, the first resist film 3 is removed. In order to remove the first resist film 3, the substrate 1 is heated to 150 ° C. by using an ashing device using high-density plasma excited by magnetron, the reaction chamber pressure of the ashing device is 1 Torr, and the oxygen flow rate is 1900 sccm. , Triple oromethane flow rate 100
It is removed under the conditions of sccm and power of 1400W. Further, the resist film 3 may be removed by a resist stripping solution, ultrasonic cleaning using NMP (N-methyl-2-pyrrolidone), or a mixed solution of sulfuric acid and hydrogen peroxide solution.

Next, as shown in FIG. 1E, silicon dioxide (SiO ₂ ) is formed on the surfaces of the substrate 1 and the first sacrificial layer 2 by using a CVD device, a sputtering device, or the like.
A second sacrificial film 4 made of silicon nitride (SiNx), silicon (Si) or the like and having a thickness of about 3 to 5 μm is formed.
At this time, a recess 4a is formed in a portion of the second sacrificial film 4 formed in the opening 2a of the first sacrificial film 2.

Next, as shown in FIG. 1F, the plating seed layer 5 is formed on the surface of the second sacrificial film 4 by a sputtering method, a vacuum deposition method, an ion plating method or the like.
To form. In this embodiment, the sputtering method is preferably used. As the plating seed layer 5,
A copper thin film, a copper (Cu) / chromium (Cr) thin film, a chromium / silicon thin film and the like having a thickness of about 0.1 to 1 μm are preferable.
In particular, when a copper / chromium thin film is formed as the plating seed layer 5, the second sacrificial film 4 is first heated at an initial vacuum degree of 7 × 10 ⁻⁷ Torr and 100 ° C. using, for example, a magnetron sputtering apparatus. Then, using argon (Ar) gas, the second sacrificial film is reverse-sputtered at a power of 0.3 kW and a vacuum degree of 12 mTorr. Next, chromium was used as a target and argon was used as a sputtering gas.
Sputtered at kW, vacuum degree 12 mTorr, thickness 0.0
A 3 μm chromium thin film is formed. Next, copper was used as a target and argon was used as a sputtering gas.
W, sputtered at a vacuum degree of 12 mTorr, thickness 0.3μ
m copper thin film is formed.

Next, as shown in FIG. 2A, a photoresist having a thickness of 10 to 60 μm is coated on the surface of the plating seed layer 5, and a mask having an arbitrary shape is arranged on the surface of the photoresist. Then, baking and development are performed to remove unnecessary photoresist, and a second resist film 6 having an opening of an arbitrary probe pin shape is formed. At this time, the second resist film 6 forms the recess 5 of the plating seed layer 5.
It is formed so as not to cover a. As the photoresist used as the second resist film 6, the same photoresist as that used for forming the first resist film 3 is used.

Next, as shown in FIG. 2 (b), a known sulfuric acid-based iron (F) is formed on the surface including the recess 5a of the plating seed layer 5 on which the second resist film 6 is not formed.
e), electroplating is performed using a plating solution for nickel (Ni) to grow the plating and fill the recesses 5a to form the probe pins 7 made of a nickel-iron alloy, a nickel-tungsten alloy, or the like. At this time, the thickness of the probe pin 7 can be set arbitrarily. For example, when forming a probe pin 7 having a thickness of 20 μm and made of a nickel-iron alloy (nickel: iron = 81% by weight: 19% by weight), a plating solution temperature of 45 ° C. is used by using an electrolytic plating apparatus.
The probe pin 7 is formed under the conditions that the plating solution has a pH of 3.3 to 3.4 and a current of 0.7A.

Next, as shown in FIG. 2C, the second resist film 6 is removed. In order to remove the second resist film 6, the substrate 1 is heated to 150 ° C. by using, for example, an ashing device using magnetron-excited high-density plasma, the reaction chamber pressure of the ashing device is 1 Torr, and the oxygen flow rate is 1900 sccm, trifluoromethane flow rate 100
It is removed under the conditions of sccm and electric power of 1400W.

Next, as shown in FIG. 2 (d), the supporting substrate 8 made of glass and the probe pin 7 are bonded by a bonding method such as anodic bonding, thermocompression bonding, bonding in a pressurized atmosphere, and thermal curing bonding. To join. In the present invention, anodic bonding is preferably used. Here, anodic bonding is a method of precisely bonding a metal (anode side) and a glass (cathode side) at a low temperature by applying a DC voltage, and is a glass near a bonding interface with a Kovar alloy (Fe-based alloy). An alkali ion deficient layer is formed therein, and a Fe—Si-based amorphous composite oxide layer having a thickness of several hundred nm is formed in the vicinity of the bonding interface. is there. In this embodiment, the probe pin 7 serves as an anode and the support substrate 8
Is the cathode. To perform anodic bonding between the support substrate 8 and the probe pin 7, for example, using an anodic bonding apparatus, the support substrate 8 and the probe pin 7 are connected to each other in a range of 200 to 400 in vacuum.
A voltage of 500 to 1000 V is applied while heating to ° C.

As the support substrate 8, glass containing alkali ions, crystallized glass, or the like is used. Here, the crystallized glass is a glass obtained by reheating a base glass having a special composition to uniformly deposit a large number of fine crystals, and has a coefficient of expansion close to that of silicon. Is. Further, the heat resistant temperature of crystallized glass is about 1000 ° C., which is superior to the heat resistant temperature of 600 to 700 ° C. of ordinary glass. Furthermore, in the crystallized glass, when the microcracks generated on the surface of the crystallized glass reach the internal crystal grains, they do not grow any more. On the other hand, in ordinary glass, microcracks grow infinitely, and the entire glass base material may be destroyed over time. From the above, crystallized glass is a material suitable for applications requiring strength at high temperature and high pressure.

Next, as shown in FIG. 2 (e), the plating seed layer 5 is dissolved with an etching solution or the like that preferentially dissolves copper, and a spire-shaped or knife-edge-shaped protrusion is formed at the tip. The probe 9 including the probe pin 7 and the support substrate 8 is peeled from the substrate 1. Examples of the etching solution used here include a non-cyan type copper stripping agent.

Next, as shown in FIG. 2 (f), a flexible printed circuit board 11 in which a large number of electrodes 10, 10, ... The conductive conductive film 12 is bonded to obtain a probe unit. The probe pin 7 and the electrodes 10, 10, ...
0, 10, ... Are connected so as to form a pair. In order to join the probe pin 7 and the electrodes 10, 10, ..., For example, a temperature of 180 to 190 ° C. and a pressure of 3 MPa are applied for 15 to 30 seconds under heat and pressure. As the anisotropic conductive film 12, an anisotropic conductive paste, an anisotropic conductive film, or the like is used.

FIG. 3 is a schematic sectional view showing a second embodiment of the method for manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment, the steps shown in FIGS. 1A to 1D in the first embodiment are performed as follows. First, as shown in FIG. 3A, a substrate 13 made of a glass plate having a thickness of about 0.3 mm to several mm, a synthetic resin plate, a ceramics plate, silicon, a metal plate, or the like.
A photoresist of arbitrary thickness is applied on the surface of, and a mask of arbitrary shape is placed on the surface of this photoresist, and baking and development are performed to remove unnecessary photoresist, and The first resist film 14 is formed. At this time, the first resist film 14 has a diameter of 6 to
One or two or more openings 14a of about 10 μm are formed. Further, the thickness of the first resist film 14 is 0.5 to
The thickness is preferably 60 μm. First resist film 14
The same photoresist as that used for forming the first resist film 3 is used as the photoresist.

Next, as shown in FIG. 3B, a portion of the substrate 13 not covered with the first resist film 14 is anisotropically etched and removed by a reactive ion etching method. An opening 13a is formed in the substrate 13.

Next, as shown in FIG. 3C, the first resist film 14 is removed. To remove the first resist film 14, for example, an ashing apparatus using magnetron-excited high-density plasma is used to remove the substrate 13 by 150
Heating to ℃, pressure in the reaction chamber of the ashing device 1 Tor
r, oxygen flow rate 1900 sccm, trifluoromethane flow rate 100 sccm, and power 1400 W.

FIG. 4 is a schematic sectional view showing a third embodiment of the method for manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment, the steps shown in FIGS. 1A to 1D in the first embodiment are performed as follows. First, as shown in FIG. 4A, a CVD device, a sputtering device, or the like is used on the surface of a substrate 15 made of a glass plate, a synthetic resin plate, a ceramics plate, silicon, a metal plate or the like having a thickness of about several mm. And is made of isotropically etchable material such as silicon dioxide (SiO ₂ ), silicon nitride (SiN _x ), silicon (Si), aluminum (Al), and aluminum alloy, and has a thickness of about 0.1 to 10 μm. The first sacrificial film 16 is formed.

Next, as shown in FIG. 4B, a photoresist having an arbitrary thickness is applied on the surface of the first sacrificial film 16, and a mask having an arbitrary shape is applied to the surface of the photoresist. Arrangement, baking, and development are performed to remove unnecessary photoresist, and the first resist film 1 having an arbitrary shape is formed.
Form 7. At this time, in the first resist film 17,
One or two or more openings 17a having a diameter of about 1 to 6 μm are formed. The thickness of the first resist film 17 is
The thickness is preferably 0.5 to 3 μm. As the photoresist used as the first resist film 17, the same photoresist as that used for forming the first resist film 3 is used.

Next, as shown in FIG. 4C, the first sacrificial film 16 is isotropically etched to form an opening 16a. At this time, when the first sacrificial film 16 is made of silicon dioxide, it is etched by, for example, a hydrogen fluoride / ammonium fluoride solution. When the first sacrificial film 16 is made of silicon nitride, it is etched with phosphorus oxide (HPO ₄ ) heated to 80 ° C., for example.

Next, as shown in FIG. 4D, the first resist film 17 is removed. In order to remove the first resist film 17, for example, an ashing device using magnetron-excited high-density plasma is used to remove the substrate 15 by 150.
Heating to ℃, pressure in the reaction chamber of the ashing device 1 Tor
r, oxygen flow rate 1900 sccm, trifluoromethane flow rate 100 sccm, and power 1400 W.

FIG. 5 is a schematic sectional view showing a fourth embodiment of the method for manufacturing a probe unit of the present invention. In the method of manufacturing the probe unit according to this embodiment, in the first embodiment, as shown in FIGS. 1 (e) to 1 (f) and FIG.
The steps shown in (a) and (b) are as follows. First, as shown in FIG. 5A, a second sacrificial film 20 is formed on the surfaces of the substrate 18 and the first sacrificial film 19 by using a sputtering device, a vacuum vapor deposition device, a plating device, or the like. At this time, the recess 20a is formed in the second sacrificial film 20. In this embodiment, a sputtering device is preferably used. The second sacrificial film 20 has a thickness of 1
A copper thin film, a tin thin film and the like having a thickness of about 20 μm are preferable.

Next, as shown in FIG. 5B, a photoresist having a thickness of 10 to 60 μm is applied on the surface of the second sacrificial film 20, and a mask having an arbitrary shape is applied to the surface of the photoresist. Is disposed, and baking and development are performed to remove unnecessary photoresist, and a second resist film 21 having an opening in an arbitrary probe pin shape is formed. At this time, the second resist film 21 is formed so as not to cover the concave portion 20a of the second sacrificial film 20. As the photoresist used as the second resist film 21, the same photoresist as that used for forming the first resist film 3 is used.

Next, as shown in FIG. 5C, on the surface of the second sacrificial film 20 on which the second resist film 21 is not formed, a known sulfuric acid-based iron (Fe), By electroplating using a plating solution for nickel (Ni), the plating is grown to form the probe pin 22 made of a nickel-iron alloy, a nickel-tungsten alloy, or the like. At this time, the thickness of the probe pin 22 can be set arbitrarily. For example, a nickel-iron alloy (nickel:
When forming the probe pin 22 having a thickness of 20 μm and made of iron-81% by weight: 19% by weight), the temperature of the plating solution is 45 ° C., the pH of the plating solution is 3.3-
The probe pin 22 is formed under the conditions of 3.4 and current of 0.7 A.

6 and 7 are schematic sectional views showing a fifth embodiment of the method of manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment,
First, as shown in FIG. 6A, on the surface of the substrate 31,
A thickness made of an anisotropically etchable material such as silicon dioxide (SiO ₂ ), silicon nitride (SiN _x ), silicon (Si), aluminum (Al) or aluminum alloy using a CVD device or a sputtering device. 1 ~
A first sacrificial film 32 having a thickness of about 30 μm is formed. Board 31
There is no particular limitation, but the thickness is 0.3 mm to several mm.
A glass plate, a synthetic resin plate, a ceramics plate, silicon, a metal plate, etc. of a certain degree are used.

Next, as shown in FIG. 6B, a photoresist is applied on the surface of the first sacrificial film 32, and a mask having an arbitrary shape is arranged on the surface of the photoresist.
The unnecessary photoresist is removed by baking and developing, and the first resist film 33 having an arbitrary shape is formed. At this time, the first resist film 33 has a diameter of 6 to 1
A plurality of openings 33a of about 0 μm are formed. Also, the first
It is preferable that the resist film 33 has a thickness of 0.5 to 20 μm. As the photoresist used as the first resist film 33, the same photoresist used for forming the first resist film 3 is used.

Next, as shown in FIG. 6C, the portion of the first sacrificial film 32 not covered with the first resist film 33 is anisotropically etched by the reactive ion etching method. Then, the plurality of openings 32a are formed in the first sacrificial film 32.

Next, as shown in FIG. 6D, the first resist film 33 is removed. In order to remove the first resist film 33, for example, an ashing device using magnetron-excited high-density plasma is used to remove the substrate 31 from the substrate 150 by 150.
Heating to ℃, pressure in the reaction chamber of the ashing device 1 Tor
r, oxygen flow rate 1900 sccm, trifluoromethane flow rate 100 sccm, and power 1400 W.

Next, as shown in FIG. 6E, the substrate 31
And on the surface of the first sacrificial layer 32, a silicon dioxide (Si
O ₂ ), silicon nitride (SiN _x ), silicon (Si) and other anisotropically etchable materials, thickness 3-5
A second sacrificial film 34 of about μm is formed. At this time, a plurality of recesses 34a are formed in the plurality of openings 32a of the first sacrificial film 32.

Next, as shown in FIG. 6F, on the surface of the second sacrificial film 34, a sputtering method, a vacuum evaporation method,
The plating seed layer 35 is formed by an ion plating method or the like. In this embodiment, the sputtering method is preferably used. As the plating seed layer 35, a copper thin film having a thickness of about 0.1 to 1 μm, copper (Cu) /
A chromium (Cr) thin film, a chromium / silicon thin film, etc. are preferable. In particular, when a copper / chromium thin film is formed as the plating seed layer 35, for example, using a magnetron sputtering device, first, the initial vacuum degree is 7 × 10 ⁻⁷ Torr, 1
The second sacrificial film 34 is heated at 00 ° C. and argon (Ar) is added.
Using gas, electric power 0.3kW, vacuum degree 12mTorr
Then, the second sacrificial film 34 is reverse-sputtered. Next, using chromium as a target and argon as a sputtering gas, sputtering is performed at a power of 0.3 kW and a vacuum degree of 12 mTorr to form a chromium thin film having a thickness of 0.3 μm. Next, using copper as a target and argon as a sputtering gas, sputtering was performed at a power of 2 kW and a vacuum degree of 12 mTorr.
A copper thin film having a thickness of 0.3 μm is formed.

Next, as shown in FIG. 7A, a photoresist having a thickness of 10 to 60 μm is applied on the surface of the plating seed layer 35, and a mask having an arbitrary shape is arranged on the surface of the photoresist. Then, baking and development are performed to remove unnecessary photoresist, and a second resist film 36 having an arbitrary probe pin shape is formed. At this time, the second resist film 36 is formed so as not to cover the recess 35 a of the plating seed layer 35. The photoresist used as the second resist film 36 is the first
The same material as that used for forming the resist film 3 is used.

Next, as shown in FIG. 7B, on the surface including the recess 35a of the plating seed layer 35 where the second resist film 36 is not formed, a known iron (Fe) based on sulfuric acid is formed. ), Electroplating using a plating solution for nickel (Ni) causes the plating to grow and form the recess 35.
a is filled and the probe pin 37 made of a nickel-iron alloy, a nickel-tungsten alloy or the like is formed. At this time, the thickness of the probe pin 37 can be set arbitrarily.
For example, when forming the probe pin 37 of nickel-iron alloy (nickel: iron = 81% by weight: 19% by weight) with a thickness of 20 μm, the plating solution temperature is 45 ° C. and the plating solution pH is 3 using an electrolytic plating apparatus. The probe pin 37 is formed under the conditions of 0.3 to 3.4 and a current of 0.7A.

Next, as shown in FIG. 7C, the second resist film 36 is removed. In order to remove the second resist film 36, for example, an ashing device using magnetron-excited high-density plasma is used to remove the substrate 31 from the substrate 150 by 150.
Heating to ℃, pressure in the reaction chamber of the ashing device 1 Tor
r, oxygen flow rate 1900 sccm, trifluoromethane flow rate 100 sccm, and power 1400 W.

Next, as shown in FIG. 7D, the support substrate 38 made of glass and the probe pin 37 are anodically bonded,
Bonding is performed using a bonding method such as thermocompression bonding, bonding in a pressurized atmosphere, and heat curing bonding. Anodic bonding is preferably used in this embodiment. To perform anodic bonding between the support substrate 38 and the probe pin 37, for example, using an anodic bonding device, while heating the support substrate 38 and the probe pin 37 at 200 to 400 ° C. in vacuum, 500 to 1000 V
Voltage is applied. As the support substrate 38, glass containing alkali ions, crystallized glass, or the like is used.

Next, as shown in FIG. 7 (e), the plating seed layer 85 is dissolved with an etching solution or the like that preferentially dissolves copper, and a spire-shaped or knife-edge-shaped protrusion is formed at the tip portion. The probe 39 including the probe pin 37 and the support substrate 38 is peeled off from the first substrate 31. Examples of the etching solution used here include a non-cyan type copper stripping agent.

Next, as shown in FIG. 7F, a large number of electrodes 40, 40, ... Are attached to the probe pin 37 of the probe 39.
Flexible printed boards 41 formed in parallel with each other at a uniform pitch are joined by an anisotropic conductive film 42 to obtain a probe unit. Probe pin 37 and electrodes 40, 4
The connection with 0, ... Is made so that the projection 37a of the probe pin 37 and the electrodes 40, 40 ,. To join the probe pin 37 and the electrodes 40, 40, ..., For example, a temperature of 180 to 190 ° C. and a pressure of 3M
Heat press bonding is performed for 15 to 30 seconds at Pa. Anisotropic conductive film 42
For example, an anisotropic conductive paste, an anisotropic conductive film, or the like is used.

8 and 9 are schematic sectional views showing a sixth embodiment of the method for manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment,
First, on the surface of a substrate 51 made of a glass plate, a synthetic resin plate, a ceramics plate, silicon, a metal plate or the like having a thickness of about 0.3 mm to several mm, a silicon dioxide (SiO 2 ₂ ), silicon nitride (SiN _x ), silicon (Si), aluminum (A
l), a first sacrificial film 52 made of an anisotropically etchable material such as an aluminum alloy and having a thickness of about 1 to 30 μm is formed. Next, on the surface of the first sacrificial film 52,
A photoresist of arbitrary thickness is applied, a mask of arbitrary shape is arranged on the surface of this photoresist, and unnecessary photoresist is removed by baking and developing, and a first resist film of arbitrary shape is formed. (Not shown) is formed. At this time, the first resist film has a diameter of 6 to 10 μm.
One or two or more openings of about m are formed. Also,
The thickness of the first resist film is preferably 0.5 to 20 μm. As the photoresist used as the first resist film, the same photoresist as that used for forming the first resist film 3 is used.

Next, by the reactive ion etching method,
A portion of the first sacrificial film 52 which is not covered with the first resist film is anisotropically etched and removed to form an opening in the first sacrificial film 52. Next, the first resist film is removed. To remove the first resist film, the substrate 51 is heated to 150 ° C. by using, for example, an ashing device using high-density plasma excited by magnetron, the reaction chamber pressure of the ashing device is 1 Torr, and the oxygen flow rate is 19
00sccm, trifluoromethane flow rate 100scc
m and power of 1400 W.

Next, as shown in FIG.
Then, the second sacrificial film 53 is formed on the surface of the first sacrificial film 52 by using a sputtering device, a vacuum vapor deposition device, a plating device, or the like. At this time, the concave portion 53a is formed in the second sacrificial film 53. In this embodiment, a sputtering device is preferably used. As the second sacrificial film 53, a copper thin film, a tin thin film or the like having a thickness of about 1 to 20 μm is preferable.

Next, as shown in FIG. 8B, a CVD seed layer 54 is formed on the surface of the second sacrificial film 53 by using a CVD apparatus, a vacuum evaporation apparatus, or the like. The CVD seed layer 54 is preferably a titanium nitride (TiN _x ) thin film, a tantalum nitride (TaN _x ) thin film, or the like having a thickness of about 0.1 to 1 μm.

Next, as shown in FIG. 8C, the refractory metal layer 5 is formed on the surface including the recess 54a of the CVD seed layer 54 by using a CVD apparatus, a sputtering apparatus or the like.
5 is formed to fill the concave portion 54a. Refractory metal layer 55
For example, tungsten (W) molybdenum (Mo) and tungsten silicide (WS) having a thickness of about 0.15 to 15 μm are used.
i _X ), molybdenum silicide (MoSi _x ), tungsten carbide (WC) and other high melting point metal compounds are preferred.

Next, as shown in FIG. 8D, the entire surface of the refractory metal layer 55 is etched to form the CVD seed layer 5.
The refractory metal layer 55 forming the protrusion of the probe pin remains only in the concave portion 54a of No. 4. Nickel iron / titanium (Ti) or copper (Cu) / chromium (Cr) may be sputtered on the CVD seed layer 54 and the refractory metal layer 55 as a plating seed layer.

Next, as shown in FIG. 8E, a photoresist having a thickness of 10 to 60 μm is applied on the surface of the CVD seed layer 54, and a mask having an arbitrary shape is applied to the surface of the photoresist. After disposing, baking and development are performed to remove unnecessary photoresist, a second resist film 56 having an arbitrary probe pin shape is formed. At this time, the second resist film 56 is formed so as not to cover the surface of the refractory metal layer 55 remaining in the recess 54a. As the photoresist used as the second resist film 56, the same photoresist used for forming the first resist film 3 is used. Further, the recess may be left as it is without forming the refractory metal layer 55.

Next, as shown in FIG. 9A, the CVD seed layer 54 on which the second resist film 56 is not formed is formed.
On the surface of the high-melting-point metal layer 55, electroplating is performed using a known sulfuric acid-based plating solution for iron (Fe) and nickel (Ni) to grow the plating, and a nickel-iron alloy is obtained. The protrusion support portion 57 of the probe pin made of nickel-tungsten alloy or the like is formed.
At this time, the thickness of the protrusion support portion 57 can be set arbitrarily. For example, when forming the protrusion support portion 57 of 20 μm in thickness made of nickel-iron alloy (nickel: iron = 81% by weight: 19% by weight), an electrolytic plating apparatus is used and the plating solution temperature is 45 ° C. The protrusion support portion 57 is formed under the conditions of pH 3.3 to 3.4 and current 0.7A.

Next, as shown in FIG. 9B, the second resist film 56 is removed. In order to remove the second resist film 55, for example, an ashing device using magnetron-excited high-density plasma is used to remove the substrate 51 by 150.
Heating to ℃, pressure in the reaction chamber of the ashing device 1 Tor
r, oxygen flow rate 1900 sccm, trifluoromethane flow rate 100 sccm, and power 1400 W.

Next, as shown in FIG. 9C, a bonding method such as anodic bonding, thermocompression bonding, bonding in a pressurized atmosphere, and thermal curing bonding is performed between the supporting substrate 58 made of glass and the protrusion supporting portion 57. To join. Anodic bonding is preferably used in this embodiment. Support substrate 58 and protrusion support 5
In order to perform anodic bonding between the support substrate 58 and the protrusion support part 57 in vacuum, for example, using an anodic bonding device,
A voltage of 500 to 1000 V is applied while heating to ˜400 ° C. As the support substrate 58, glass containing alkali ions, crystallized glass, or the like is used.

Next, as shown in FIG. 9D, the CVD seed layer 54 is heated to, for example, 80 ° C. sulfuric acid (H ₂
SO ₄ ) / hydrogen peroxide (H ₂ O ₂ ) solution to form a high-melting-point metal layer 55 that forms a pinnacle-shaped or knife-edge-shaped protrusion of the probe pin, protrusion support 57, and support substrate 58.
The probe 59 composed of is separated from the substrate 51.

Next, as shown in FIG. 9E, a flexible printed circuit board 61 having a plurality of electrodes 60, 60, ... Bonding is performed with the anisotropic conductive film 62 to obtain a probe unit. The projection support portion 57 and the electrodes 60, 60, ...
The connection between the lead and the electrode 6 that form the protrusion support portion 57 is performed.
0, 60, ... Are connected in a pair. In order to join the protrusion support portion 57 and the electrodes 60, 60, ..., For example, the temperature is 180 to 190 ° C., and the pressure is 3 MPa for 15 to 30 seconds under heat and pressure. As the anisotropic conductive film 62, an anisotropic conductive paste, an anisotropic conductive film, or the like is used.

FIG. 10 is a schematic sectional view showing a seventh embodiment of the method of manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment, the sixth
In the above embodiment, the steps shown in FIGS. 9B to 9D are performed as follows. First, as shown in FIG. 10A, the protrusion support portion 57 is used as a mask and the protrusion support portion 5 is used.
The seed layer 54 for CVD, which is the lower layer of No. 7 and protrudes from the protrusion support portion 57, is anisotropically etched and removed by using a milling device, a reactive ion etching device, or the like. 54 is formed in the same shape as the protrusion support portion 57. Here, the recess 6 is formed without forming the refractory metal.
When 3 is left, it is possible to obtain a probe unit in which the protrusion support portion 57 and the CVD seed layer 54 are directly laminated as shown in FIG.

Next, as shown in FIG. 10B, the support substrate 58 and the projection support 57 are bonded together by a bonding method such as anodic bonding, thermocompression bonding, bonding in a pressurized atmosphere, and thermal curing bonding. .

Next, as shown in FIG. 10C, the second sacrificial film 53 is dissolved with an etching solution that preferentially dissolves copper, and the CVD seed layer 54 and the refractory metal layer 55 are formed. ,
The projection supporting portion 57 and the supporting substrate 58 are integrated into the substrate 5
Peel from 1. Examples of the etching solution used here include a non-cyan type copper stripping agent.
Thus, the CVD seed layer 54 and the refractory metal layer 55
Then, a probe 59 including the probe pin 57 and the second substrate 58 is obtained.

The CVD seed layer 54 is formed, for example, at 80.degree.
It is dissolved in a sulfuric acid (H ₂ SO ₄ ) / hydrogen peroxide (H ₂ O ₂ ) solution heated to a high temperature, and the high melting point metal layer 55 and the probe pin 57 are dissolved.
It is also possible to obtain the probe 59 composed of the second substrate 58.

FIG. 11 is a schematic sectional view showing an eighth embodiment of the method for manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment, the sixth
In the above embodiment, the steps shown in FIGS. 8A to 8C are performed as follows. In the method of manufacturing the probe unit of this embodiment, first, a CVD device, a CVD device, and Using a sputtering device, etc., silicon dioxide (SiO 2
₂ ) Forming a first sacrificial film 72 having a thickness of about 1 to 30 μm, which is made of an anisotropically etchable material such as silicon nitride (SiN _x ), silicon (Si), aluminum (Al), and aluminum alloy. To do.

Next, a photoresist is applied on the surface of the first sacrificial film 72, a mask having an arbitrary shape is arranged on the surface of the photoresist, and baking and development are performed to remove unnecessary photo resist. Remove the resist, the first of arbitrary shape
Forming a resist film (not shown). At this time, one or two or more openings having a diameter of about 6 to 10 μm are formed in the first resist film. Further, the thickness of the first resist film is preferably 0.5 to 20 μm. As the photoresist used as the first resist film, the same photoresist as that used for forming the first resist film 3 is used.

Next, by the reactive ion etching method,
A portion of the first sacrificial film 72 which is not covered with the first resist film is anisotropically etched and removed to form an opening in the first sacrificial film 72. Next, the first resist film is removed. In order to remove the first resist film, the substrate 71 is heated to 150 ° C. by using, for example, an ashing device using high-density plasma excited by magnetron, the reaction chamber pressure of the ashing device is 1 Torr, and the oxygen flow rate is 19
00sccm, trifluoromethane flow rate 100scc
m and power of 1400 W.

Next, as shown in FIG. 11A, the substrate 7
On the surfaces of the first and first sacrificial films 72, a silicon dioxide (SiO 2) film is formed by using a CVD device, a sputtering device, or the like.
₂ ) A second sacrificial film 73 made of a material such as silicon nitride (SiN _x ), silicon (Si), aluminum (Al), and an aluminum alloy and having a thickness of about 1 to 20 μm is formed. At this time, the concave portion 73a is formed in the second sacrificial film 73.

Next, as shown in FIG. 11B, a third sacrificial film 74 is formed on the surface of the second sacrificial film 73 by using a sputtering device, a vacuum vapor deposition device, a plating device or the like. . At this time, the concave portion 74a is formed in the third sacrificial film 74. In the present invention, a sputtering device is preferably used. The third sacrificial film 74 has a thickness of 0.5.
A copper thin film, a tin thin film and the like having a thickness of about 10 μm are preferable.

Next, as shown in FIG. 11C, a CVD seed layer 75 is formed on the surface of the third sacrificial film 74 by using a CVD device, a vacuum evaporation device, or the like. The CVD seed layer 75 is preferably a titanium nitride (TiN _x ) thin film, a tantalum nitride (TaN _x ) thin film, or the like having a thickness of about 0.1 to 1 μm.

Next, as shown in FIG. 11D, CVD
On the surface of the recess 75a of the seed layer 75 for CVD,
The refractory metal layer 76 is formed using a sputtering device or the like, and the recess 75a is filled. As the refractory metal layer 76, tungsten (W), molybdenum (Mo), and tungsten silicide (W) having a thickness of about 0.5 to 15 μm are used.
A thin film made of a refractory metal compound such as Si _x ), molybdenum silicide (MoSi _x ), or tungsten carbide (WC) is preferable.

12 and 13 are schematic sectional views showing a ninth embodiment of the method for manufacturing a probe unit according to the present invention. In the method of manufacturing the probe unit of this embodiment, first, as shown in FIG. 12A, the plating seed layer 92 is formed on the surface of the substrate 91 by using a CVD apparatus, a sputtering apparatus, or the like. As the plating seed layer 92, for example, a titanium thin film of about 0.02 μm and 0.15
A laminate of nickel-iron alloy thin films having a thickness of about μm is preferable. The substrate 91 is not particularly limited as in the first embodiment, but a glass plate is preferable in this embodiment.

Next, as shown in FIG. 12B, electroplating is performed on the surface of the plating seed layer 92 using a known sulfuric acid-based plating solution for iron (Fe) and nickel (Ni). Then, plating growth is performed to form a template layer 93 made of nickel-iron alloy or the like. The thickness of the template layer 93 is not particularly limited as long as it is larger than the height of the protruding portion of the probe pin, and is, for example, 20 μm.

Next, as shown in FIG. 12C, the diamond indenter 98 is pushed into the mold layer 93 to transfer the tip shape of the diamond indenter 98 to the mold layer 93 to form the recess 93a. The load for pushing the diamond indenter 98 is 100 g, for example. Diamond indenter 98
For example, an indenter used in a micro Vickers hardness meter is preferable. The tip shape of the diamond indenter 98 may be any shape corresponding to the shape of the protruding portion of the probe pin, and may be a steeple shape such as a quadrangular pyramid or a cone or a knife edge shape.

Next, as shown in FIG. 12D, a sacrificial film 94 is formed on the surface of the mold layer 93 using a sputtering device, a vacuum vapor deposition device, a plating device and the like. In this embodiment, it is preferable to use a sputtering device.
The sacrificial film is preferably a copper thin film, an aluminum thin film, or the like having a thickness of about 0.3 μm. A recess 94a corresponding to the recess 93a of the template layer 93 is formed on the surface of the sacrificial film 94.

Next, as shown in FIG. 12E, a photoresist having a thickness of about 20 μm is applied on the surface of the sacrificial film 94, a mask having an arbitrary shape is arranged on the surface of the photoresist, and baking and A development process is performed to remove unnecessary photoresist, and a resist film 95 having an arbitrary probe pin shape is formed. The resist film 95 is formed so as not to cover the recess 94a of the sacrificial film 94. This photoresist is the same as that used for forming the first resist film in the first embodiment.

Next, as shown in FIG. 13A, on the surface including the recess 94a of the sacrificial film 94 on which the resist film 95 is not formed, known sulfuric acid-based iron (Fe), nickel (Ni) or nickel (Ni) is used. ) Is used for electroplating to grow the plating and fill the recess 94a to form the probe pin 96 made of a nickel-iron alloy, a nickel-tungsten alloy, or the like. At this time, the thickness of the probe pin 96 can be set arbitrarily, but in this embodiment, it is preferably about 15 μm.

Next, as shown in FIG. 13B, the resist film 95 is removed in the same manner as in the first embodiment.

Next, as shown in FIG. 13C, the support substrate 97 made of glass and the probe pin 96 are bonded in the same manner as in the first embodiment.

Next, as shown in FIG. 13D, the sacrificial film 94 is dissolved in the same manner as in the first embodiment, and the probe pin 96 having a spire-shaped or knife-edge-shaped protrusion 96a at its tip is formed. The probe including the support substrate 97 and the support substrate 97 is separated from the substrate 91. The flexible printed circuit board is bonded to the probe separated from the substrate 91 with an anisotropic conductive film as in the first embodiment.

FIG. 14 is a schematic sectional view showing a tenth embodiment of the method for manufacturing a probe unit of the present invention. In the method of manufacturing the probe unit of this embodiment, the recess 93a of the template layer 93 of the ninth embodiment is formed as follows.

First, the substrate 9 is formed in the same manner as in the ninth embodiment.
A plating seed layer is formed on the surface of 1.

Next, a photoresist having a thickness of about 1 μm is applied on the surface of the plating seed layer 92, a mask having an arbitrary shape is arranged on the surface of the photoresist, and baking and development are performed to make unnecessary unnecessary. The photoresist is removed, and a resist film 99 as a blocking film having a shape corresponding to the protruding portion of the probe pin is formed as shown in FIG. It is preferable to use a positive resist as the photoresist.

Next, using a known plating solution for iron (Fe) and nickel (Ni) based on sulfuric acid, the surface of the plating seed layer 92 on which the resist film 99 as the blocking film is not formed is electrically charged. By plating, as shown in FIG. 14, plating is grown to form a template layer 93 made of permalloy or the like. At this time, even after the plating layer overflows on the surface of the resist film 99 as the blocking film,
Further, the plating layer is grown. Then, the plating layer covers the resist film 99 while growing isotropically, so that the recess 93a is formed above the resist film 99 as the blocking film. The thickness of the template layer 93 is not particularly limited as long as the concave portion 93a has a size corresponding to the shape of the protruding portion of the probe pin.

FIG. 15 is a schematic perspective view showing a first example of the probe unit of the present invention. In the probe unit of this example, the probe pin forming the probe unit is composed of a spire-shaped projection 82 and a projection support 81 for supporting the projection 82. In the probe unit of this example, one protrusion 82 is formed near each tip of the protrusion support 81 for each protrusion support 81.

FIG. 16 is a schematic perspective view showing a second example of the probe unit of the present invention. In the probe unit of this example, the probe pin forming the probe unit is composed of a spire-shaped projection portion 84 and a projection support portion 83 that supports the projection portion 84. In the probe unit of this example, a plurality of protrusions 84 are formed in the vicinity of the tip of the protrusion support 83 for each protrusion support 83.
4 are arranged in parallel in the longitudinal direction of the projection support portion 83.

FIG. 17 is a schematic perspective view showing a third example of the probe unit of the present invention. In the probe unit of this example, the probe pin forming the probe unit is composed of a spire-shaped projection portion 86 and a projection support portion 85 that supports the projection portion 86. In the probe unit of this example, three protrusions 86 are formed near the tip of the protrusion support 85 for each protrusion support 85.
6 are arranged so as to form the respective vertices of the triangle, and in the triangle formed by the three protrusions 86, one vertex is arranged on the tip side of the protrusion support 85, and the protrusion support 8
Two apexes are arranged on the rear end side of 5. Further, the number of protrusions 86 is not particularly limited.

FIG. 18 is a schematic perspective view showing a fourth example of the probe unit of the present invention. In the probe unit of this example, the probe pin that constitutes the probe unit is composed of a knife-edge-shaped protrusion 88 and a protrusion support 87 that supports the protrusion 88. In the probe unit of this example, two protrusions 88, 88 are provided near the tip of the protrusion support 87 for each protrusion support 87.
One piece is formed along each of the two edges in the longitudinal direction of 7. The two protrusions 88, 88 are arranged so as to face each other. Further, the number and position of the protrusions 88 are not limited to this.

[0092]

As described above, according to the probe unit of the present invention, the probe unit is provided with the probe pin, the lead-out wiring, and the support substrate that supports the probe pin and the lead-out wiring. The probe pin is composed of a pinnacle-shaped or knife-edge-shaped protrusion and a protrusion support that supports the protrusion,
Since the projection support portion is connected to the lead-out wiring, the projection portion is arranged on the projection support portion with high accuracy, and the current-carrying test of the liquid crystal panel or the like can be performed with high accuracy. The protrusion forming the probe pin may be formed of any material selected from tungsten, molybdenum, tungsten silicide, molybdenum silicide, tungsten carbide, titanium nitride, nickel, nickel alloy such as nickel iron. If so, the probe pin is less likely to be deformed by heat, and a probe unit having excellent heat resistance can be obtained.

According to the method of manufacturing the probe unit of the present invention, the protrusion and the protrusion supporting portion which form the probe pin can be molded with high accuracy.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a first embodiment of a method for manufacturing a probe unit of the present invention.

FIG. 2 is a schematic cross-sectional view showing the first embodiment of the method for manufacturing a probe unit of the present invention.

FIG. 3 is a schematic cross-sectional view showing a second embodiment of the method for manufacturing a probe unit of the present invention.

FIG. 4 is a schematic cross-sectional view showing a third embodiment of the method for manufacturing a probe unit of the present invention.

FIG. 5 is a schematic sectional view showing a fourth embodiment of the method for manufacturing the probe unit of the present invention.

FIG. 6 is a schematic sectional view showing a fifth embodiment of the method for manufacturing the probe unit of the present invention.

FIG. 7 is a schematic cross-sectional view showing the fifth embodiment of the method for manufacturing a probe unit of the present invention.

FIG. 8 is a schematic sectional view showing a sixth embodiment of the method for manufacturing the probe unit of the present invention.

FIG. 9 is a schematic cross-sectional view showing a sixth embodiment of the method for manufacturing the probe unit of the present invention.

FIG. 10 is a seventh method of manufacturing a probe unit according to the present invention.
3 is a schematic cross-sectional view showing the embodiment of FIG.

FIG. 11: Eighth method of manufacturing probe unit of the present invention
3 is a schematic cross-sectional view showing the embodiment of FIG.

FIG. 12 is a ninth method of manufacturing the probe unit according to the present invention.
3 is a schematic cross-sectional view showing the embodiment of FIG.

FIG. 13 is a ninth method of manufacturing the probe unit according to the present invention.
3 is a schematic cross-sectional view showing the embodiment of FIG.

FIG. 14 is a first method of manufacturing a probe unit according to the present invention.
It is a cross-sectional schematic diagram which shows 0 embodiment.

FIG. 15 is a schematic perspective view showing a first example of the probe unit of the present invention.

FIG. 16 is a schematic perspective view showing a second example of the probe unit of the present invention.

FIG. 17 is a schematic perspective view showing a third example of the probe unit of the present invention.

FIG. 18 is a schematic perspective view showing a fourth example of the probe unit of the present invention.

[Explanation of symbols]

1,13,15,18,31,51,71 ... Substrate, 2,16,1
9, 32, 52, 72 ... First sacrificial film 3, 14, 17, 3
3 ... First resist film, 4, 20, 34, 53, 73 ... Second sacrificial film, 5, 35 ... Plating seed layer, 6, 21, 3
6,56 ... second resist film, 7,37 ... probe pin,
8, 38, 58 ... Support substrate, 9, 39, 59 ... Probe, 10, 40, 60 ... Electrode, 11, 41, 61 ... Flexible printed circuit board, 12, 42, 62 ... Anisotropic conductive film, 5
4, 75 ... CVD seed layer, 55, 76 ... Refractory metal layer, 57 ... Projection supporting portion, 63 ... Recessed portion, 74 ... Third sacrificial film, 82, 84, 86, 88 ... Projection portion, 81, 83 , 85,8
7 ... Projection support

Claims (13)

[Claims] 1. A probe unit comprising a probe pin, a lead-out wiring, and a support substrate for supporting the probe pin and the lead-out wiring, wherein the probe pin is a spire-shaped or knife-edge-shaped protrusion. And a projection support portion that supports the projection portion, wherein the projection support portion is connected to the lead-out wiring. 2. A probe unit comprising a probe pin, a lead-out wiring, and a support substrate that supports the probe pin and the lead-out wiring, wherein the probe pin has a spire-shaped or knife-edge-shaped protrusion. And a projection support portion that supports the projection portion, wherein the projection support portion is connected to the lead-out wiring via the projection portion. 3. The protrusion forming the probe pin,
It is formed of any material selected from nickel alloys such as tungsten, molybdenum, tungsten silicide, molybdenum silicide, tungsten carbide, titanium nitride, nickel, nickel iron, and the like. Probe unit. 4. The protrusion forming the probe pin,
Obtained by filling the material into the concave portion obtained on the sacrificial film by forming the sacrificial film on the substrate having an opening or by forming the sacrificial film on the template layer having the concave portion, The probe unit according to claim 3, wherein the projection support portion is obtained by being continuously formed from the projection portion. 5. A step of forming a first resist having a first opening on a surface of a substrate on which a first sacrificial film is formed, and the first resist in the first opening of the first resist. Removing the sacrificial film to form a second opening in the first sacrificial film, and removing the first resist.
Forming a second sacrificial film on the surfaces of the first sacrificial film and the substrate, and forming a recess in a portion of the second sacrificial film formed in the second opening; and the second sacrificial film. A step of forming a plating seed layer on the surface of the sacrificial film, a step of forming a probe pin-shaped second resist on the surface of the plating seed layer, and a protrusion and a protrusion on the opening of the second resist by plating. A step of forming a probe pin composed of a support portion, a step of removing the second resist, a step of directly bonding a support substrate to the surface of the probe pin, and a step of removing the plating seed layer. A method of manufacturing a probe unit, comprising: 6. The method of manufacturing a probe unit according to claim 5, further comprising a step of bonding a flexible printed circuit board to the surface of the support substrate with an anisotropic conductive film after the step of removing the plating seed layer. A method of manufacturing a probe unit, comprising: 7. The method of manufacturing a probe unit according to claim 5, wherein after the step of removing the plating seed layer, an electrode formed on the surface of the flexible printed circuit board is joined to a protrusion forming the probe pin. A method of manufacturing a probe unit, comprising: 8. A step of forming a first resist having a first opening on the surface of the first substrate on which the first sacrificial film is formed, and inside the first opening of the first resist. Removing the first sacrificial film to form a second opening in the first sacrificial film, removing the first resist, and removing the first sacrificial film and the substrate. Forming a second sacrificial film on the surface and forming a recess in a portion of the second sacrificial film formed in the second opening; and forming a recess on the surface of the second sacrificial film. A step of forming a CVD seed layer having a template portion for forming a protrusion forming a probe pin at a corresponding portion; a step of forming a refractory metal layer on the surface of the CVD seed layer; Etching the layer to leave the refractory metal layer only in the mold part; A step of forming a second resist film in the shape of a protrusion supporting portion forming a probe pin on the surface of the seed layer; a step of forming the protrusion supporting portion by plating in an opening of the second resist; 2. A method of manufacturing a probe unit, comprising: a step of removing the resist, a step of directly bonding a supporting substrate to the surface of the protrusion supporting portion, and a step of removing the CVD seed layer. 9. The method for manufacturing a probe unit according to claim 8, further comprising a step of joining a flexible printed board to the surface of the support substrate with an anisotropic conductive film after the step of removing the CVD seed layer. A method of manufacturing a probe unit, including: 10. The method of manufacturing a probe unit according to claim 8, wherein, after the step of removing the CVD seed layer, an electrode formed on the surface of the flexible printed circuit board is provided on a protrusion forming the probe pin. A method of manufacturing a probe unit, comprising the step of joining. 11. The method of manufacturing a probe unit according to claim 8, wherein after the step of removing the second resist, the step of anisotropically removing the CVD seed layer is performed, and the protrusion support portion. A method of manufacturing a probe unit, comprising: a step of directly bonding a support substrate to the surface of the substrate; and a step of removing the second sacrificial film. 12. The method of manufacturing a probe unit according to claim 11, further comprising a step of bonding a flexible printed circuit board to the surface of the support substrate with an anisotropic conductive film after the step of removing the CVD seed layer. A method of manufacturing a probe unit, comprising: 13. The method of manufacturing a probe unit according to claim 11, wherein, after the step of removing the CVD seed layer, an electrode formed on the surface of the flexible printed circuit board is provided on a protrusion forming the probe pin. A method of manufacturing a probe unit, comprising the step of joining.