JP2003013168A - High thermal-conductivity material and manufacturing method therefor - Google Patents
High thermal-conductivity material and manufacturing method thereforInfo
- Publication number
- JP2003013168A JP2003013168A JP2001194585A JP2001194585A JP2003013168A JP 2003013168 A JP2003013168 A JP 2003013168A JP 2001194585 A JP2001194585 A JP 2001194585A JP 2001194585 A JP2001194585 A JP 2001194585A JP 2003013168 A JP2003013168 A JP 2003013168A
- Authority
- JP
- Japan
- Prior art keywords
- high thermal
- thermal conductivity
- tungsten carbide
- copper
- preform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims abstract description 33
- 239000010949 copper Substances 0.000 claims abstract description 33
- 239000000843 powder Substances 0.000 claims abstract description 21
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 239000012779 reinforcing material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 230000002787 reinforcement Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000012466 permeate Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000009715 pressure infiltration Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高熱伝導性材料及
びその製造方法に関し、特にＩＣパッケージや多層配線
基板などに供するヒートシンク材等の放熱体に用いられ
る高熱伝導性材料及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high thermal conductivity material and a manufacturing method thereof, and more particularly to a high thermal conductivity material used for a radiator such as a heat sink material provided for an IC package, a multilayer wiring board and the like and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】半導体、とりわけＬＳＩは、高集積化、
高速化されているため発熱が増加しており、それがため
に、半導体内の回路に誤動作を発生させたり、ひいては
半導体回路自身を破壊させたりしている。そのため、高
集積半導体を収納するパッケージの熱放散が必要とされ
ている。2. Description of the Related Art Semiconductors, especially LSIs, are highly integrated.
Since the speed is increased, the amount of heat generated is increasing, which causes malfunctions in the circuits in the semiconductor and eventually destroys the semiconductor circuits themselves. Therefore, it is necessary to dissipate the heat of the package that houses the highly integrated semiconductor.
【０００３】そのパッケージの熱放散については、従
来、絶縁基板として熱伝導率が約２０Ｗ／ｍＫ程度の熱
伝導率の低いアルミナセラミックスからなる材料が用い
られているので、熱放散を高めるためにヒートシンクが
備えられたパッケージが使用されている。Regarding the heat dissipation of the package, conventionally, a material made of alumina ceramics having a low heat conductivity of about 20 W / mK is used as an insulating substrate. Therefore, in order to enhance the heat dissipation, a heat sink is used. A package with is used.
【０００４】そのヒートシンクには、高熱伝導性に加え
てアルミナセラミックスとの熱膨張係数を一致させると
いう観点から、その含有割合を変えることにより熱膨張
係数を一致させることのでき得る銅とＳｉＣとの複合材
料からなるヒートシンクが提案されている。From the viewpoint that the heat sink has a high thermal conductivity and a thermal expansion coefficient that matches that of the alumina ceramics, the thermal expansion coefficient of copper and SiC can be made to match by changing the content ratio. Composite heat sinks have been proposed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この材
料では、複合化はできるものの、ＳｉＣが銅に対して濡
れ性が悪いためにＳｉＣと銅との密着性が悪く、それが
ためにＳｉＣによる銅の拘束が十分に働かないで銅の膨
張を抑えることができず、複合化した複合材料の熱膨張
係数が思ったより小さくならないという問題があった。However, although this material can be composited, since the wettability of SiC to copper is poor, the adhesion between SiC and copper is poor. There was a problem that the expansion of copper could not be suppressed without sufficient restraint of (2) and the thermal expansion coefficient of the composite material did not become smaller than expected.
【０００６】本発明は、上述した材料が有する課題に鑑
みなされたものであって、その目的は、高い熱伝導性を
維持しつつ、熱膨張係数を低くすることのできる高熱伝
導性材料を提供し、その製造方法をも提供することにあ
る。The present invention has been made in view of the problems of the above-mentioned materials, and an object thereof is to provide a high thermal conductivity material capable of lowering the coefficient of thermal expansion while maintaining high thermal conductivity. And to provide a manufacturing method thereof.
【０００７】[0007]
【課題を解決するための手段】本発明者等は、上記目的
を達成するため鋭意研究した結果、ＳｉＣと銅との複合
材料の代わりに炭化タングステン（ＷＣ）と銅との複合
材料とすれば、高い熱伝導性を維持しつつ、熱膨張係数
の低い高熱伝導性材料が得られるとの知見を得て本発明
を完成するに至った。Means for Solving the Problems As a result of intensive studies for achieving the above object, the present inventors have found that a composite material of tungsten carbide (WC) and copper should be used instead of a composite material of SiC and copper. The present invention has been completed based on the finding that a high thermal conductivity material having a low thermal expansion coefficient can be obtained while maintaining high thermal conductivity.
【０００８】即ち本発明は、（１）強化材である炭化タ
ングステンを２０〜７０体積％含み、残部が銅からな
り、かつ１６０Ｗ／ｍＫ以上の熱伝導率を有し、１０×
１０-6／℃以下の熱膨張係数を有することを特徴とする
高熱伝導性材料（請求項１）とし、（２） 炭化タング
ステン粉末で２０〜７０体積％の粉末充填率を有するプ
リフォームを形成し、そのプリフォームに溶融した銅を
不活性ガス雰囲気中で非加圧で浸透させることにより、
１６０Ｗ／ｍＫ以上の熱伝導率を有し、１０×１０-6／
℃以下の熱膨張係数を有する炭化タングステンと銅との
複合材料からなる高熱伝導性材料を作製することを特徴
とする高熱伝導性材料の製造方法（請求項２）とするこ
とを要旨とする。以下さらに詳細に説明する。That is, the present invention (1) contains 20 to 70% by volume of tungsten carbide which is a reinforcing material, the balance is made of copper, and has a thermal conductivity of 160 W / mK or more.
A high thermal conductivity material having a coefficient of thermal expansion of 10 -6 / ° C. or less (claim 1), and (2) forming a preform having a powder filling rate of 20 to 70% by volume with tungsten carbide powder. Then, by allowing molten copper to penetrate into the preform in an inert gas atmosphere without pressure,
Has a thermal conductivity of 160 W / mK or more, 10 × 10 -6 /
The gist of the present invention is to provide a method for producing a high thermal conductivity material (claim 2), characterized in that a high thermal conductivity material made of a composite material of tungsten carbide and copper having a coefficient of thermal expansion of ℃ or less is produced. This will be described in more detail below.
【０００９】上記で述べたように、本発明の高熱伝導性
材料としては、強化材である炭化タングステンを２０〜
７０体積％含み、残部が銅からなり、かつ１６０Ｗ／ｍ
Ｋ以上の熱伝導率を有し、１０×１０-6／℃以下の熱膨
張係数を有することとする高熱伝導性材料とした（請求
項１）。As described above, as the high thermal conductive material of the present invention, 20 to 20% tungsten carbide which is a reinforcing material is used.
Contains 70% by volume, the balance consisting of copper, and 160 W / m
A high thermal conductivity material having a thermal conductivity of K or more and a thermal expansion coefficient of 10 × 10 −6 / ° C. or less (claim 1).
【００１０】これは、ＳｉＣの代わりに銅との濡れ性の
良い炭化タングステンとすることにより、炭化タングス
テンと銅との密着性が良くなり、それがために炭化タン
グステンによる銅の拘束が十分に働いて銅の膨張を抑え
ることができ、複合化した複合材料の熱膨張係数を期待
通り小さくすることができるものとしたものである。This is because the use of tungsten carbide, which has good wettability with copper, instead of SiC improves the adhesion between tungsten carbide and copper, and therefore the binding of copper by tungsten carbide works sufficiently. The expansion of copper can be suppressed and the coefficient of thermal expansion of the composite material can be reduced as expected.
【００１１】その複合材料中の炭化タングステンの含有
率としては、２０〜７０体積％とした。炭化タングステ
ンの含有率が２０体積％より低いと、熱膨張係数が大き
くなって低い熱膨張係数が得られず、７０体積％より高
いと、高い熱伝導率が得られない。その銅と炭化タング
ステンとの割合で複合化された材料の熱伝導率は、１６
０Ｗ/ｍＫ以上の高い熱伝導率が得られ、１０×１０-6
／℃以下の低い熱膨張係数が得られる。The content of tungsten carbide in the composite material was 20 to 70% by volume. When the content of tungsten carbide is lower than 20% by volume, the coefficient of thermal expansion becomes large and a low coefficient of thermal expansion cannot be obtained. When it is higher than 70% by volume, high thermal conductivity cannot be obtained. The thermal conductivity of the material compounded with the ratio of copper and tungsten carbide is 16
High thermal conductivity of 0 W / mK or more is obtained, 10 × 10 -6
A low coefficient of thermal expansion below / ° C is obtained.
【００１２】その高熱伝導性材料の製造方法としては、
先ず炭化タングステン粉末で２０〜７０体積％の粉末充
填率を有するプリフォームを形成し、そのプリフォーム
に溶融した銅を不活性ガス雰囲気中で非加圧で浸透させ
ることとする製造方法とした（請求項２）。The method for producing the high thermal conductivity material is as follows:
First, a preform having a powder filling rate of 20 to 70% by volume was formed from tungsten carbide powder, and molten copper was allowed to permeate the preform in an inert gas atmosphere without pressurization ( Claim 2).
【００１３】炭化タングステンと銅とを複合化させる方
法としては、慣用の方法が用いられ、例えば、炭化タン
グステン粉末と銅粉末とを混合し、成形し、焼成して作
製する粉末冶金法、炭化タングステン粉末でプリフォー
ムを形成し、そのプリフォームに溶融した銅を加圧して
浸透させ作製する高圧鋳造法、あるいはそのプリフォー
ムに溶融した銅を非加圧で浸透させ作製する非加圧浸透
法などがある。As a method for compounding tungsten carbide and copper, a conventional method is used. For example, a powder metallurgy method, a tungsten metal carbide method prepared by mixing tungsten carbide powder and copper powder, molding and firing. A high-pressure casting method that forms a preform from powder and pressurizes and permeates molten copper into the preform, or a non-pressurized permeation method that permeates molten copper into the preform without pressurizing. There is.
【００１４】その中で非加圧浸透法は、機械的な加圧を
行わなくても溶融した銅を浸透できるという特徴がある
ので、高価で大掛かりな装置を必要とせず、容易で安価
に作製できるという特徴があり、しかも炭化タングステ
ンは銅に対する濡れ角が３０°以下とＳｉＣに比べて濡
れ性がはるかに良いので、ＳｉＣの場合には難しかった
この非加圧浸透法で簡単に安価に作製できるので、本発
明が特に好ましいものとなる。Among them, the non-pressurized permeation method is characterized in that it can permeate molten copper without applying mechanical pressure, so that it does not require an expensive and large-scale apparatus, and is easy and inexpensive to manufacture. In addition, since tungsten carbide has a wettability of 30 ° or less with copper, which is far better than that of SiC, tungsten carbide can be easily and inexpensively manufactured by this non-pressurized infiltration method. Therefore, the present invention is particularly preferable.
【００１５】[0015]
【発明の実施の形態】本発明の製造方法を詳しく述べる
と、ここでは先の非加圧浸透法で製造する方法を述べる
ので、先ず炭化タングステン粉末を用意し、それに複合
化させる銅のインゴットも用意する。BEST MODE FOR CARRYING OUT THE INVENTION The production method of the present invention will be described in detail. Here, since the production method by the above-mentioned non-pressure infiltration method will be described, first, a tungsten carbide powder is prepared, and a copper ingot to be compounded with it is also prepared. prepare.
【００１６】用意した炭化タングステン粉末で２０〜７
０体積％の粉末充填率を有するプリフォームを形成す
る。プリフォームの形成方法はプレス法でもよいし、鋳
込み法でもよく、プリフォームを形成できる方法であれ
ばどんな方法でもよい。20 to 7 with the prepared tungsten carbide powder
A preform having a powder fill of 0% by volume is formed. The method of forming the preform may be a pressing method or a casting method, and may be any method as long as it can form the preform.
【００１７】得られたプリフォームに用意した銅のイン
ゴットを接触させ、それを不活性ガス雰囲気中、例えば
アルゴンガス雰囲気中で所定温度で熱処理し、溶融した
銅を非加圧でプリフォーム中に浸透させ、それを冷却し
て炭化タングステンと銅との複合材料からなる高熱伝導
性材料を作製する。A copper ingot prepared is brought into contact with the obtained preform and heat-treated at a predetermined temperature in an inert gas atmosphere, for example, an argon gas atmosphere, and the molten copper is applied to the preform without pressure. The material is infiltrated and cooled to prepare a highly heat-conductive material composed of a composite material of tungsten carbide and copper.
【００１８】以上の方法で高熱伝導性材料を作製すれ
ば、高い熱伝導性を維持しつつ、熱膨張係数の低い高熱
伝導性材料が得られる。If the high thermal conductivity material is produced by the above method, a high thermal conductivity material having a low coefficient of thermal expansion can be obtained while maintaining high thermal conductivity.
【００１９】[0019]
【実施例】以下本発明の実施例を比較例と共に具体的に
挙げ、本発明をより詳細に説明する。EXAMPLES The present invention will be described in more detail with reference to specific examples of the present invention together with comparative examples.
【００２０】（実施例１）
（１）高熱伝導性材料の作製
強化材である炭化タングステン粉末（日本新金属社製、
平均粒径１００μｍ）１００重量部にコロイダルシリカ
液（常磐電気社製、ＦＪ２９４）を３重量部加え、これ
にさらにイオン交換水を３０重量部加え混合してスラリ
ーを調整した。(Example 1) (1) Preparation of high thermal conductivity material Tungsten carbide powder (manufactured by Nippon Shinkin Co., Ltd.)
To 100 parts by weight of the average particle diameter of 100 μm, 3 parts by weight of a colloidal silica liquid (FJ294 manufactured by Joban Electric Co., Ltd.) was added, and further 30 parts by weight of ion-exchanged water was added and mixed to prepare a slurry.
【００２１】得られたスラリーをフィルタープレスして
成形体を成形した後、その成形体を１０００℃の温度で
焼成して５０体積％の粉末充填率を有するプリフォーム
を形成した。得られたプリフォームに銅（平野商店扱
い、純度９９．９％）のインゴットを接触させ、それを
アルゴンガス雰囲気中で１２００℃の温度で加熱処理
し、溶融した銅をプリフォーム中に非加圧で浸透させ、
冷却して炭化タングステンと銅との複合材料からなる高
熱伝導性材料を作製した。The resulting slurry was filter-pressed to form a compact, and the compact was fired at a temperature of 1000 ° C. to form a preform having a powder filling rate of 50% by volume. The obtained preform is brought into contact with an ingot of copper (treated by Hirano Shoten, purity 99.9%) and heat-treated at a temperature of 1200 ° C. in an argon gas atmosphere, so that molten copper is not added to the preform. Infiltrate with pressure,
After cooling, a high thermal conductive material composed of a composite material of tungsten carbide and copper was prepared.
【００２２】（２）評価
得られた高熱伝導性材料から３×４×１５ｍｍの試験片
を切り出し、その試験片の熱膨張係数をＪＩＳ Ｒ１６
１８に準拠して求めた（測定機器：理学電気社製、ＴＭ
Ａ８４１０）。また、得られた高熱伝導性材料からφ１
０×２ｍｍの試験片を切り出し、その試験片の熱伝導率
をレーザーフラッシュ法で測定した（測定機器：理学電
気社製、ＬＦ／ＴＣＭ−ＦＡ８５１０Ｂ）。それらの結
果を表１に示す。(2) Evaluation A test piece of 3 × 4 × 15 mm was cut out from the obtained high thermal conductive material, and the thermal expansion coefficient of the test piece was measured according to JIS R16.
18 (measurement equipment: manufactured by Rigaku Denki, TM
A8410). In addition, from the high thermal conductivity material obtained, φ1
A 0 × 2 mm test piece was cut out, and the thermal conductivity of the test piece was measured by the laser flash method (measurement instrument: manufactured by Rigaku Denki LF / TCM-FA8510B). The results are shown in Table 1.
【００２３】（実施例２）実施例１のフィルタープレス
圧を増加して炭化タングステン粉末の充填率を６０体積
％とするプリフォームを形成した他は実施例１と同様に
高熱伝導性材料を作製し、評価した。その結果も表１に
示す。(Example 2) A high thermal conductive material was produced in the same manner as in Example 1 except that the filter press pressure of Example 1 was increased to form a preform having a filling rate of tungsten carbide powder of 60% by volume. And evaluated. The results are also shown in Table 1.
【００２４】（比較例１）比較のために比較例１では、
炭化タングステン粉末に銅粉末（昭和化学社製、平均粒
径５μｍ）を加えて混合した粉末で炭化タングステン粉
末の充填率が１５体積％のプリフォームを形成した他は
実施例１と同様に高熱伝導性材料を作製し、評価した。
その結果も表１に示す。Comparative Example 1 For comparison, in Comparative Example 1,
High thermal conductivity as in Example 1 except that a preform having a tungsten carbide powder filling rate of 15% by volume was formed from a powder obtained by adding copper powder (manufactured by Showa Chemical Co., Ltd., average particle size: 5 μm) to tungsten carbide powder and mixing. A material was prepared and evaluated.
The results are also shown in Table 1.
【００２５】（比較例２）比較のために比較例２では、
炭化タングステン粉末に銅粉末（昭和化学社製、平均粒
径５μｍ）を加えて混合した粉末をφ２０ｍｍの金型に
充填し、それをプレスして成形した成形体をアルゴンガ
ス雰囲気中で１１５０℃の温度で燒結して炭化タングス
テンの含有率が８５体積％の高熱伝導性材料を作製し、
それを実施例１と同様に評価した。その結果も表１に示
す。Comparative Example 2 For comparison, in Comparative Example 2,
Copper powder (manufactured by Showa Kagaku Co., Ltd., average particle size: 5 μm) was added to and mixed with tungsten carbide powder. Sintered at a temperature to produce a high thermal conductive material having a tungsten carbide content of 85% by volume,
It was evaluated as in Example 1. The results are also shown in Table 1.
【００２６】（比較例３）比較のために比較例３では、
炭化タングステン粉末の代わりにＳｉＣ粉末（信濃電気
精錬社製、平均粒径１５μｍ）を用いた他は実施例２と
同様に高熱伝導性材料を作製し、評価した。その結果も
表１に示す。(Comparative Example 3) For comparison, in Comparative Example 3,
A high thermal conductive material was prepared and evaluated in the same manner as in Example 2 except that SiC powder (manufactured by Shinano Denki Smelting Co., Ltd., average particle size: 15 μm) was used instead of the tungsten carbide powder. The results are also shown in Table 1.
【００２７】[0027]
【表１】 [Table 1]
【００２８】表１から明らかなように、実施例１、２と
も本発明で規定した１６０Ｗ／ｍＫ以上の熱伝導率を有
する高熱伝導性材料が得られ、また１０×１０-6／℃以
下の熱膨張係数を有する高熱伝導性材料が得られた。こ
のことは、本発明の高熱伝導性材料であれば、高い熱伝
導性を維持しつつ、熱膨張係数を低くすることのできる
高熱伝導性材料とすることができることを示している。As is clear from Table 1, in Examples 1 and 2, high thermal conductivity materials having a thermal conductivity of 160 W / mK or more specified in the present invention were obtained, and those having a thermal conductivity of 10 × 10 -6 / ° C. or less were obtained. A high thermal conductivity material having a coefficient of thermal expansion was obtained. This indicates that the high thermal conductivity material of the present invention can be used as a high thermal conductivity material capable of lowering the coefficient of thermal expansion while maintaining high thermal conductivity.
【００２９】これに対して比較例１では、炭化タングス
テンの含有率が少な過ぎたので、高い熱伝導率が得られ
るものの、熱膨張係数が本発明の規定した値より大きく
なってしまっていた。また、比較例２では、炭化タング
ステンの含有率が多過ぎたので、低い熱膨張係数が得ら
れるものの、熱伝導率が本発明の規定した値より小さく
なってしまっていた。さらに、比較例３では、ＳｉＣに
よる拘束の働きが十分でないため、熱伝導率は本発明の
規定した値より大きくなるものの、熱膨張係数が本発明
の規定した値より大きくなってしまっていた。On the other hand, in Comparative Example 1, the content of tungsten carbide was too small, so that although high thermal conductivity was obtained, the coefficient of thermal expansion was larger than the value specified by the present invention. Further, in Comparative Example 2, the content rate of tungsten carbide was too high, so that a low coefficient of thermal expansion was obtained, but the thermal conductivity was smaller than the value specified by the present invention. Furthermore, in Comparative Example 3, since the function of restraint by SiC was not sufficient, the thermal conductivity was larger than the value specified by the present invention, but the thermal expansion coefficient was larger than the value specified by the present invention.
【００３０】[0030]
【発明の効果】以上の通り、本発明の高熱伝導性材料で
あれば、高い熱伝導性を維持しつつ、熱膨張係数を低く
することのできる高熱伝導性材料とすることができるよ
うになった。このことにより、熱放散のより良好なヒー
トシンク材等の放熱体に用いられる高熱伝導性材料を提
供できるようになった。さらに、非加圧浸透法で作製で
きるので、複雑な形状のヒートシンク材等であっても、
簡単にしかも安価に作製できるようになった。As described above, with the high thermal conductivity material of the present invention, it is possible to obtain a high thermal conductivity material capable of lowering the coefficient of thermal expansion while maintaining high thermal conductivity. It was As a result, it has become possible to provide a highly heat-conductive material used for a radiator such as a heat sink material having a better heat dissipation. Furthermore, since it can be manufactured by the non-pressure infiltration method, even if it is a heat sink material with a complicated shape,
It can now be manufactured easily and at low cost.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/36 Ｃ２２Ｃ 101:12 23/373 Ｈ０１Ｌ 23/36 Ｚ // Ｃ２２Ｃ 101:12 Ｍ (72)発明者 塩貝 達也 千葉県佐倉市大作２−４−２ 太平洋セメ ント株式 会社 中央研究所 Ｆターム(参考） 4K020 AA22 AC04 BA02 BB22 5F036 AA01 BB01 BD01 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 23/36 C22C 101: 12 23/373 H01L 23/36 Z // C22C 101: 12 M (72) Invention Tatsuya Shiogai 2-4-2 Daisaku Sakura City, Chiba Prefecture Central Research Institute, Pacific Cement Co., Ltd. F-term (reference) 4K020 AA22 AC04 BA02 BB22 5F036 AA01 BB01 BD01
Claims (2)
７０体積％含み、残部が銅からなり、かつ１６０Ｗ／ｍ
Ｋ以上の熱伝導率を有し、１０×１０-6／℃以下の熱膨
張係数を有することを特徴とする高熱伝導性材料。1. Tungsten carbide which is a reinforcing material is added in an amount of 20 to
Contains 70% by volume, the balance consisting of copper, and 160 W / m
A high thermal conductive material having a thermal conductivity of K or more and a thermal expansion coefficient of 10 × 10 −6 / ° C. or less.
％の粉末充填率を有するプリフォームを形成し、そのプ
リフォームに溶融した銅を不活性ガス雰囲気中で非加圧
で浸透させることにより、１６０Ｗ／ｍＫ以上の熱伝導
率を有し、１０×１０-6／℃以下の熱膨張係数を有する
炭化タングステンと銅との複合材料からなる高熱伝導性
材料を作製することを特徴とする高熱伝導性材料の製造
方法。2. A preform having a powder filling rate of 20 to 70% by volume is formed from tungsten carbide powder, and molten copper is impregnated into the preform in an inert gas atmosphere without pressurization to obtain 160 W. High thermal conductivity characterized by producing a high thermal conductivity material made of a composite material of tungsten carbide and copper having a thermal conductivity of / mK or more and a thermal expansion coefficient of 10 × 10 −6 / ° C. or less. Material manufacturing method.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001194585A JP4850357B2 (en) | 2001-06-27 | 2001-06-27 | Method for producing high thermal conductivity material |
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| JP2003013168A true JP2003013168A (en) | 2003-01-15 |
| JP4850357B2 JP4850357B2 (en) | 2012-01-11 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100733107B1 (en) * | 2006-06-09 | 2007-06-28 | 안헌상 | Cake decorations |
| CN100443624C (en) * | 2007-02-14 | 2008-12-17 | 西安建筑科技大学 | Preparation Technology of Activated Carbon Carbide Wire Mesh Copper Matrix Composite |
| CN117602909A (en) * | 2024-01-22 | 2024-02-27 | 湖南瑞砂环境科技有限公司 | Floor heating special cement mortar based on tungsten tailings and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08239712A (en) * | 1995-02-28 | 1996-09-17 | Nippon Steel Corp | Lance nozzle for converter blowing |
| JPH09111312A (en) * | 1995-10-13 | 1997-04-28 | Sumitomo Electric Ind Ltd | Method for manufacturing composite alloy member |
-
2001
- 2001-06-27 JP JP2001194585A patent/JP4850357B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08239712A (en) * | 1995-02-28 | 1996-09-17 | Nippon Steel Corp | Lance nozzle for converter blowing |
| JPH09111312A (en) * | 1995-10-13 | 1997-04-28 | Sumitomo Electric Ind Ltd | Method for manufacturing composite alloy member |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100733107B1 (en) * | 2006-06-09 | 2007-06-28 | 안헌상 | Cake decorations |
| CN100443624C (en) * | 2007-02-14 | 2008-12-17 | 西安建筑科技大学 | Preparation Technology of Activated Carbon Carbide Wire Mesh Copper Matrix Composite |
| CN117602909A (en) * | 2024-01-22 | 2024-02-27 | 湖南瑞砂环境科技有限公司 | Floor heating special cement mortar based on tungsten tailings and preparation method thereof |
| CN117602909B (en) * | 2024-01-22 | 2024-05-17 | 湖南瑞砂环境科技有限公司 | Floor heating special cement mortar based on tungsten tailings and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| JP4850357B2 (en) | 2012-01-11 |
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