JP2003076300A - Electro-optical device and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] An electro-optical device capable of reducing the intensity of a specular reflection component and realizing sufficient brightness and contrast with respect to a slightly inclined display screen. And a method for producing the same. SOLUTION: The shape of a portion of a reflective electrode 9 disposed on a side wall of a contact hole 15 and a portion electrically connected to a voltage supply wiring 6b is changed to a portion disposed on a side wall of the contact hole 15. A cross section taken along a plane perpendicular to the substrate 10 has an inclined shape of an inverted trapezoidal or bowl-shaped curved surface, and a plane perpendicular to the substrate 10 is provided at a portion electrically connected to the voltage supply wiring 6b. The cross section cut by the step has a dish-shaped gentle concave curved surface, and the whole is in the shape of a sand pot, so that the specular reflection component from the contact portion is reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electro-optical device and a method of manufacturing the same. More specifically, it is possible to reduce the intensity of the reflection component that is specularly reflected at the reflection angle (θ) of 0 ° (the normal direction of the substrate) in the reflected light reflected from the reflective electrode. The present invention relates to an electro-optical device capable of effectively preventing glare of a face and the like and achieving sufficient brightness and contrast on a slightly tilted display screen, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Electro-optical devices (for example, liquid crystal display devices,
EL light-emitting display devices and the like) are widely used as direct-view display devices for various devices such as mobile phones and mobile computers. Among such electro-optical devices, for example,
In an active matrix type reflective liquid crystal display device, as shown in FIG. 17, a TFT array substrate 10 and a counter substrate 20 facing each other are sealed with a sealing material (not shown).
The liquid crystal 50 as an electro-optical substance is sealed and held in the area defined by the sealing material between the substrates.

Outside light incident from the counter substrate 20 side on the surface of the TFT array substrate 10 (the surface protective film 104, the concavo-convex forming layer 105, and the concavo-convex layer 106) is reflected toward the counter substrate 20. A reflective electrode 108 is formed for reflecting the light incident from the counter substrate 20 side by the reflective electrode 108 of the TFT array substrate 10 and displaying an image by the light emitted from the counter substrate 20 side.

As shown in FIG. 18, a pixel used in a liquid crystal device for displaying an image in such a reflection mode usually has a length of 50 to 70 μm in the x direction and a length of 1 in the y direction.
The pixel has a size of 50 to 210 μm, and a square or rectangular contact hole having a size of 10 to 15 μm × 10 to 15 μm used for electrically connecting the reflective electrode and the voltage supply wiring to such a pixel. 107 and an unevenness 109 for reflection are provided.

Further, as shown in FIG. 19, the cross-sectional shape of the portion where the contact hole 107 is formed is such that the base protective layer 10 such as a silicon oxide film (SiO ₂ film) is formed on the substrate 101.
2. Source line 103 such as ITO (Indium Tin Oxide), thin film transistor (not shown), Si
The surface protection film 104 such as N, the unevenness 109 for reflection (see FIG.
2), an organic insulating film (concavo-convex forming layer) 105, an organic insulating film (concave-convex layer) 106, and aluminum or silver, or an alloy thereof, or titanium or nitriding thereof. Titanium, molybdenum,
It has a structure formed by laminating the reflective electrode 108 and the like formed of a laminated film of tantalum or the like. Contact hole 107
Is an organic insulating film (uneven layer) 106 and a surface protective film 104.
Formed by penetrating through the reflective electrode 108 and the source line 103.
And are electrically connected.

[0006]

However, as shown in FIG.
As shown in FIG. 5, the source line 103 and the surface of the reflective electrode 108 that contacts the source line 103 have a planar shape, and the area of the contact hole 107 in the whole pixel is relatively large. When the reflection angle (θ) is 0 ° (the normal direction of the substrate), the intensity of the reflection component that is specularly reflected affects the reflection of the user's face, etc., and the display screen is slightly tilted. However, there was a problem that sufficient brightness and contrast could not be realized.

That is, a conventional electro-optical device, for example,
In the case of a reflective liquid crystal device having a low temperature polysilicon panel, the source line 103 and the source line 103 of the reflective electrode 108
Since the surface that comes into contact with is flat, the bottom of the opening must be flat, and in order to obtain a high-quality and high-definition screen, the pixel pitch is reduced to about 50 μm. However, the size of the contact hole 107 used therein is about 10 to 10 in order to realize proper resistance in the electrical connection between the reflective electrode 108 and the voltage supply wiring (source line 103). Since it is unavoidable to make it large like a 15 μm square, the ratio of it to the area of the whole pixel cannot be ignored.
As a result of increasing the regular reflection component of the reflection component of the reflection light reflected from the reflection electrode arranged in the contact hole 107, the reflection of the user's face or the like occurs, and the display screen is slightly inclined. Therefore, there is a problem that sufficient brightness and contrast cannot be realized.

The present invention has been made in view of the above problems, and in the reflected light reflected from the reflective electrode, the reflection component is regularly reflected at a reflection angle (θ) of 0 ° (the normal direction of the substrate). Of the user's face can be effectively prevented, and sufficient brightness and contrast can be realized for a slightly tilted display screen. An object is to provide an electro-optical device.

[0009]

In order to solve the above-mentioned problems, an electro-optical device of the present invention includes a pair of substrates which are opposed to each other by enclosing and holding an electro-optical substance, and a pair of the substrates. A voltage supply wiring formed on the electro-optical material side of one substrate, an insulating film formed on the voltage supply wiring, and a contact hole that penetrates the insulating film and reaches the voltage supply wiring. And reflects incident light from the other substrate side of the pair of substrates, which is disposed on the side wall of the contact hole and electrically connected to the voltage supply wiring through the contact hole. An electro-optical device comprising a reflective electrode, wherein the shape of the portion of the reflective electrode disposed on the side wall of the contact hole and the portion electrically connected to the voltage supply wiring is Arranged on the side wall In the portion where the cross section cut in a plane perpendicular to the substrate has an inclination of an inverted trapezoidal shape or a bowl-shaped curved surface, and the portion electrically connected to the voltage supply wiring is connected to the substrate. On the other hand, it is characterized in that it has a bowl-like shape as a whole with a cross section cut along a plane perpendicular to it and having a dish-like gentle concave curved surface.

As described above, the contact hole and the reflection electrode are formed in the same shape so as to exhibit the same function as the unevenness for reflection in the pixel, so that the reflection hole is reflected from the bowl-shaped reflection electrode. The reflected light has a reduced reflection component that is specularly reflected at a reflection angle (θ) of 0 ° (the normal direction of the substrate) as compared with the conventional light. Therefore, it is possible to effectively prevent the reflection of the user's face or the like, and it is possible to realize sufficient brightness and contrast for a slightly tilted display screen.

Further, as shown in FIG. 15, in the electro-optical device of the present invention, the sectional shape of the reflective electrode taken along a plane parallel to the substrate is round, elliptical or polygonal. It is preferably one. In the case of a circular shape, its diameter is preferably about 5 to 10 μm. Also in the case of other shapes, it is preferable that they have the same size (area). 2 if the contact area is insufficient and the resistance is high
You can also take individual pieces.

With this structure, the slotted reflecting electrode is more effective in the direction of reflected light than the conventional reflecting electrode having a square cross section (the inner space has a three-dimensional inverted pyramid shape). As a result, it is possible to more effectively prevent the reflection of the user's face and the like, and it is possible to realize sufficient brightness and contrast for a display screen that is slightly inclined.

Further, in the electro-optical device of the present invention, the insulating film formed on the voltage supply wiring is made of an organic photosensitive resin, and the unevenness is formed on the surface of the reflective electrode. It is preferably composed of two layers, that is, a layer and an uneven layer formed on the uneven formation layer and having an uneven surface shape corresponding to the uneven surface shape of the uneven formation layer.

With this structure, it is possible to easily form a reflective electrode having a surface uneven shape for appropriately scattering the reflected light, and to improve the optical characteristics.

Further, in the electro-optical device of the present invention, it is preferable that the reflective electrode is electrically connected in a state of abutting or partially invading the voltage supply wiring.

In this manner, the voltage supply wiring in the portion in contact with the reflection electrode is ground to some extent, and the portion in contact with the reflection electrode is shaped like the bottom of a pickpocket, thereby forming a reflection angle (θ ) Can increase the reflection component of 15 ° to 35 °.

Further, in the electro-optical device of the present invention, the reflection angle (θ) of the reflected light reflected from the reflecting electrode is 0.
It is preferable that the intensity of the reflection component that is specularly reflected at the angle (normal direction of the substrate) is not more than 5 times the intensity of the reflection component that is reflected at the reflection angle (θ). That is, when the reflective electrode is made of aluminum, about 80 to 85% of the incident light is reflected, but it is more preferable that most of the reflected component is reflected at 15 ° to 35 °.

In this case, the method for measuring the reflected component of the reflected light is not particularly limited, but for example, the method shown in FIG. 16 can be mentioned.

FIG. 16 shows a reflection plate (T
FIG. 4 is a cross-sectional view showing a method for measuring the reflection characteristic of the FT array substrate) 10. Assuming that the reflector 10 is actually used in a liquid crystal display device, the refractive index of the liquid crystal layer and the glass substrate are both approximately equal to about 1.5.
The glass substrate 16a is brought into close contact with the glass substrate 0 by using an ultraviolet curable adhesive resin having a refractive index of 1.5 to form the measuring device 18. A photomultimeter 17 for measuring the intensity of light is arranged above the glass substrate 16a. The photomultimeter 17 receives the incident light 19a from the normal direction of the glass substrate 16b by the reflection electrode 9 from the glass substrate 16b.
Reflected light 1 reflected at a reflection angle (θ) with respect to the normal direction of
9b is set to be detected.

The photomultimeter 17 is moved so that the angle (θ) of the photomultimeter 17 with respect to the incident light 19a.
By changing variously and measuring the intensities of various reflected light 19b reflected at the reflection angle (θ) with respect to the normal direction (incident light 19a) in the reflective electrode 9.
It is possible to obtain the reflection characteristics of

With this configuration, it is possible to reliably prevent the reflection of the user's face or the like, and to realize sufficient brightness and contrast on the slightly tilted display screen. .

According to the method of manufacturing an electro-optical device of the present invention, a voltage supply wiring is formed on the electro-optical material side of one of a pair of substrates which are opposed to each other while encapsulating and holding the electro-optical material, An insulating film is formed on the voltage supply wiring, a contact hole penetrating the insulating film and reaching the voltage supply wiring is formed, and a side of the contact hole on the other substrate side of the pair of substrates is formed. A method of manufacturing an electro-optical device, comprising: providing a reflective electrode for reflecting incident light from the device, and electrically connecting a voltage supply wiring and the reflective electrode through the contact hole, The shape of the portion of the electrode disposed on the side wall of the contact hole and the portion electrically connected to the voltage supply wiring is set to the portion disposed on the side wall of the contact hole with respect to the substrate. Vertical plane The cut section has an inclination of an inverted trapezoidal shape or a bowl-shaped curved surface, and the section electrically cut with a plane perpendicular to the substrate has a dish-shaped gentle section at a portion electrically connected to the voltage supply wiring. It is characterized in that it is formed into a bowl shape as a whole, which has such a concave curved surface.

With this structure, the reflection angle (θ) of the reflected light reflected from the reflective electrode is 0 °.
It is possible to efficiently and inexpensively manufacture an electro-optical device capable of reducing the reflection component that is specularly reflected in the (normal direction of the substrate) as compared with the conventional one. Therefore, it is possible to effectively prevent the reflection of the user's face and the like, and efficiently and inexpensively manufacture an electro-optical device that realizes sufficient brightness and contrast on a slightly tilted display screen. can do.

Further, in the method of manufacturing an electro-optical device of the present invention, the sectional shape of the reflective electrode taken along a plane parallel to the substrate is a circle, an ellipse or a polygon with rounded corners. Thus, it is preferable to form the contact hole.

In the method of manufacturing an electro-optical device of the present invention, the insulating film is formed on the voltage supply wiring, and the contact hole penetrating the insulating film and reaching the voltage supply wiring is formed. At this time, on the voltage supply wiring, as the insulating film, made of an organic photosensitive resin,
A concavo-convex forming layer for forming concavities and convexities on the surface of the reflective electrode is formed, and then concavo-convex made of an organic photosensitive resin having a surface concavo-convex shape corresponding to the concavo-convex shape on the concavo-convex forming layer. It is preferable to form a layer and then to penetrate the uneven layer to form the contact hole.

With this structure, it is possible to more effectively prevent the reflection of the user's face or the like, and to realize sufficient brightness and contrast for the slightly tilted display screen. The device can be manufactured efficiently and at low cost.

In the method of manufacturing the electro-optical device according to the present invention, the contact hole is formed by penetrating the concavo-convex layer by photolithography, and the voltage supply wiring is formed by dry etching. It is preferably formed by partial erosion.

With this structure, the electro-optical device described above can be manufactured more efficiently and at low cost.

Further, in the method of manufacturing an electro-optical device according to the present invention, it is preferable that the reflective electrode is electrically connected in a state of abutting or partially invading the voltage supply wiring.

In the method for manufacturing an electro-optical device of the present invention, among the reflected light reflected from the reflective electrode,
The intensity of the reflection component that is specularly reflected at a reflection angle (θ) of 0 ° (the normal direction of the substrate) has a reflection angle (θ) of 15 ° to 35 °.
It is preferable to obtain an electro-optical device whose intensity is 5 times or less the intensity of the reflection component reflected at °. Here, the method described above can be used as a method for measuring the reflection component of the reflected light.

The electro-optical material used in the electro-optical device and the manufacturing method thereof according to the present invention is not particularly limited, and examples thereof include liquid crystal and organic EL light-emitting element. The liquid crystal display device using liquid crystal may be either a reflective type or a semi-transmissive / semi-reflective type. That is, the above-described electro-optical device is described on the assumption that it is a reflection type in which only a reflective electrode that also serves as a pixel electrode is provided as an electrode, but a transparent ITO film as a pixel electrode is provided on the reflective electrode. It may be of a semi-transmissive / semi-reflective type that also includes a transparent electrode and a transmissive window.

The electro-optical device of the present invention can be suitably used as a display device for electronic equipment such as mobile phones and mobile computers.

[0033]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an electro-optical device and a method of manufacturing the same according to the present invention will be specifically described below with reference to the drawings.

(Basic Structure of Electro-Optical Device) FIG.
FIG. 2 is a plan view of a liquid crystal display device, which is an embodiment of the electro-optical device of the present invention, as viewed from the counter substrate side together with the respective components, and FIG. 2 is a sectional view taken along line HH ′ in FIG. 1. is there. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix in an image display area of an electro-optical device (liquid crystal display device). In each of the drawings used to describe the present embodiment, the scale of each layer and each member is different in order to make each layer and each member recognizable in the drawing.

1 and 2, in the electro-optical device (liquid crystal display device) 100 of this embodiment, the TFT array substrate 10 (first substrate) and the counter substrate 20 (second substrate) are sealing materials. This sealing material 5 is attached by 52.
A liquid crystal 50 as an electro-optical material is sealed and held in a region (liquid crystal sealed region) divided by 2.
A peripheral partition 53 made of a light-shielding material is formed in a region inside the formation region of the sealing material 52. Seal material 5
In the region outside 2, the data line driving circuit 201 and the mounting terminals 202 are formed along one side of the TFT array substrate 10, and the scanning line driving circuit 204 is formed along two sides adjacent to this side. Has been done. TFT array substrate 1
A plurality of wirings 2 for connecting between the scanning line driving circuits 204 provided on both sides of the image display area are provided on the remaining side of 0.
05 is provided, and further, a precharge circuit or a test circuit may be provided using the lower side of the peripheral parting line 53 or the like. An inter-substrate conductive material 206 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is arranged at least at one corner of the counter substrate 20.

Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB on which a driving LSI is mounted is mounted.
(Tape automated bonding) Substrate and T
You may make it electrically and mechanically connect with the terminal group formed in the peripheral part of FT array substrate 10 through an anisotropic conductive film. In the electro-optical device 100, the type of the liquid crystal 50 to be used, that is, an operation mode such as a TN (twisted nematic) mode and an STN (super TN) mode, and a normally white mode / a normally black mode can be selected. Then, a polarizing film, a retardation film, a polarizing plate, etc. are arranged in a predetermined direction, but they are not shown here.

When the electro-optical device 100 is configured for color display, the TF on the counter substrate 20 is reduced.
For example, red (R), green (G), and blue (B) color filters are formed in a region of the T array substrate 10 facing each pixel electrode described later together with the surface protection film thereof.

The electro-optical device 10 having such a structure.
In the image display area of 0, as shown in FIG. 3, a plurality of pixels 100a are arranged in a matrix, and the reflective electrode 9 and the reflective electrode 9 are driven in each of the pixels 100a. A pixel switching TFT 30 for forming the pixel signals S1 and S2.
The data line 6a for supplying Sn is electrically connected to the source of the TFT 30. The pixel signals S1, S2 ... Sn to be written to the data lines 6a may be supplied line-sequentially (in the order of line numbers) in this order, and for each group of a plurality of adjacent data lines 6a. It may be supplied. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2, ... (In order). The reflective electrode 9 is electrically connected to the drain of the TFT 30 and serves as a switching element TFT3.
The pixel signals S1, S2, ... Sn supplied from the data line 6a are written to each pixel at a predetermined timing by turning on 0 for a certain period. The pixel signals S1, S2, ... Sn having a predetermined level written in the liquid crystal through the reflective electrode 9 in this manner are used as the counter substrate 2 shown in FIG.
It is held for a certain period of time with the counter electrode 21 of 0.

Here, the liquid crystal 50 modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, and enables gradation display. In the normally white mode, the amount of incident light passing through the liquid crystal 50 is reduced according to the applied voltage, and in the normally black mode, the incident light is changed according to the applied voltage. The amount of light passing through the liquid crystal 50 increases. As a result, light having a contrast corresponding to the pixel signals S1, S2, ... Sn is emitted from the electro-optical device 100 as a whole.

The held pixel signals S1, S2, ...
..In order to prevent Sn from leaking, the storage capacitor 6 is provided in parallel with the liquid crystal capacitor formed between the reflective electrode 9 and the counter electrode.
0 (see FIG. 3) may be added. For example, the voltage of the reflective electrode 9 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and the electro-optical device 100 having a high contrast ratio can be realized. In addition,
As a method of forming the storage capacitor 60, as shown in FIG. 3, the capacitance line 3 which is a wiring for forming the storage capacitor 60.
It may be formed between the scanning line 3b and the scanning line 3b, or may be formed between the scanning line 3a and the scanning line 3a in the preceding stage.

(Structure of TFT Array Substrate) FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate used in the present embodiment. FIG. 5 is a cross-sectional view of a part of the pixel of the electro-optical device shown in FIG. 4 taken along the line AA ′ in FIG.

In FIG. 4, on the TFT array substrate 10, there is formed a reflective electrode 9 made of a laminated film of aluminum, silver, an alloy thereof, titanium, titanium nitride, molybdenum, tantalum or the like. , A pixel switching TFT 30 for each of these reflective electrodes 9
Are connected to each other. In addition, the data lines 6a, the scanning lines 3a, and the capacitance lines 3b are formed along the vertical and horizontal boundaries of the hatched area that is the area where the reflective electrode 9 is formed.
T30 (see FIG. 3) is connected to the data line 6a and the scanning line 3a. That is, the data line 6a is electrically connected to the high-concentration source region 1a of the TFT 30 (see FIG. 3) through the contact hole, and the reflective electrode 9 is connected through the contact hole 15 and the source line (drain electrode) 6b. It is electrically connected to the high-concentration drain region 1d of the TFT 30 (see FIG. 3). In addition, the TFT 30 (see FIG. 3)
Scan line 3 so as to face the channel forming region 1a ′ of
a is extended. Incidentally, the storage capacitor 60 (storage capacitor element)
Is a conductive material of the extended portion 1f of the semiconductor film 1 for forming the pixel switching TFT 30 (see FIG. 3), which is used as a lower electrode. The lower electrode has a capacitance line 3b in the same layer as the scanning line 3a. Has an overlapping structure as an upper electrode.

As shown in FIG. 5, the reflection area A-
The cross section taken along the line A ′ has a thickness of 100 nm to 100 nm on the surface of the transparent substrate 10 ′ serving as the base of the TFT array substrate 10.
A base protective film 11 made of a 500 nm silicon oxide film (insulating film) is formed, and the surface of the base protective film 11 is formed.
The island-shaped semiconductor film 1 having a thickness of 30 nm to 100 nm is formed. The surface of the semiconductor film 1 has a thickness of about 50 to 1
A gate insulating film 2 made of a 50 nm silicon oxide film is formed, and a thickness of 300 n is formed on the surface of the gate insulating film 2.
The scanning line 3a of m to 800 nm passes through as a gate electrode. A region of the semiconductor film 1 facing the scanning line 3a with the gate insulating film 2 interposed therebetween is a channel forming region 1
It is a '. A source region including a low concentration source region 1b and a high concentration source region 1a is formed on one side of the channel forming region 1a ', and a low concentration drain region 1c and a high concentration drain region 1d are formed on the other side. The drain region is provided to be formed.

On the surface side of the pixel switching TFT 30, a first interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm and a thickness of 100 nm to 3 are formed.
A second interlayer insulating film (surface protection film) 5 made of a 00 nm silicon nitride film is formed. A data line 6 a having a thickness of 300 nm to 800 nm is formed on the surface of the first interlayer insulating film 4.
The data line 6a is electrically connected to the high-concentration source region 1a through a contact hole formed in the first interlayer insulating film 4. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the first interlayer insulating film 4, and the drain electrode 6b is formed on the surface of the first interlayer insulating film 4.
It is electrically connected to the high-concentration drain region 1d through the contact hole formed in.

As will be described later, a concavo-convex forming layer 13 and a concavo-convex layer 7 made of a photosensitive resin such as an organic resin are formed in this order on the upper layer of the second interlayer insulating film (surface protective film) 5. A reflective electrode 9 made of an aluminum film or the like is formed on the surface of the layer 7.

The reflective electrode 9 penetrates the concavo-convex layer 7 and the second interlayer insulating film (surface protection film) 5 to reach the drain electrode 6b, and the drain electrode 6b is formed through a slot-shaped contact hole 15. Electrically connected to.

An alignment film 12 made of a polyimide film is formed on the surface side of the reflective electrode 9. The alignment film 12 is subjected to rubbing treatment.

For the extended portion 1f (lower electrode) extending from the high-concentration drain region 1d, an insulating film (dielectric film) formed at the same time as the gate insulating film 2 is interposed between the scanning line 3a and the scanning line 3a. Since the capacitive lines 3b of the layers face each other as the upper electrode,
A storage capacity 60 is configured.

As shown in FIG. 6, the cross-sectional shape of the portion where the contact hole 15 is formed has a base protective layer (not shown) such as a silicon oxide film (SiO ₂ film) on the substrate (not shown). , Aluminum, or an alloy thereof, or a source line 6b made of a laminated film of titanium, titanium nitride, molybdenum, tantalum, or the like, a second interlayer insulating film such as a thin film transistor (not shown), a silicon nitride film (SiN film), or the like. (Surface protection film) 5, unevenness 109 for reflection (see FIG. 18)
An uneven layer 7 and an uneven forming layer 13 which are organic insulating films composed of two layers of an organic photosensitive resin such as an acrylic resin for forming a film, and aluminum or silver, or an alloy thereof,
Alternatively, it has a structure formed by laminating the reflective electrode 9 and the like formed of a laminated film of titanium, titanium nitride, molybdenum, tantalum, or the like. The contact hole 15 is formed by the uneven layer 7.
Further, the reflective electrode 9 and the source line 6b are electrically connected to each other by being formed so as to penetrate the second interlayer insulating film (surface protection film) 5.

Here, the shape of the reflective electrode 9 is such that the portion provided on the side wall of the contact hole 15 has an inclination of a curved surface and the portion electrically connected to the source line 6b has a gentle concave curved surface. It has a pickpocket shape as a whole.

Although the TFT 30 preferably has the LDD structure (lightly doped drain structure) as described above, the impurity ions are implanted into the regions corresponding to the low concentration source region 1b and the low concentration drain region 1c. You may have the offset structure which does not perform. Also,
The TFT 30 may be a self-aligned TFT in which high-concentration source and drain regions are formed in a self-aligned manner by implanting high-concentration impurity ions using the gate electrode (a part of the scanning line 3a) as a mask.

Further, in the present embodiment, two gate electrodes (scanning lines 3a) of the TFT 30 are arranged between the source-drain regions as a dual gate (double gate), but one gate electrode is arranged. Alternatively, it may be a triple gate or more in which three or more gate electrodes are arranged between them. When a plurality of gate electrodes are arranged, the same signal is applied to each gate electrode. By configuring the TFT 30 with a dual gate (double gate) or a triple gate or more in this way, it is possible to prevent a leak current at the junction between the channel and the source-drain region, and reduce the off-time current. If at least one of these gate electrodes has an LDD structure or an offset structure, the off current can be further reduced, and a stable switching element can be obtained.

4 to 6, the TFT array substrate 1
In 0, in the reflection area of each pixel 100a, a concavo-convex pattern 8g is formed on the surface of the reflection electrode 9 except for the contact holes 15.

In constructing such a concavo-convex pattern 8g, in the TFT array substrate 10 of the present embodiment,
On the lower layer side of the reflective electrode 9, in a region overlapping with the reflective electrode 9 in a plane, the unevenness forming layer 1 made of an organic photosensitive resin is formed.
3 is thickly formed on the surface of the second interlayer insulating film (surface protection film) 5, and an insulating layer formed of a fluid material such as an organic photosensitive resin is also formed on the unevenness forming layer 13. The uneven layer 7 made of a film is laminated.

A large number of irregularities are formed on the irregularity forming layer 13. For this reason, as shown in FIG.
An uneven pattern corresponding to the unevenness of the uneven forming layer 13 is formed on the surface of the uneven layer 7 formed on the surface of No. 3, and the uneven pattern of the uneven layer 7 is provided on the surface of the reflective electrode 9. An uneven pattern 8g is formed. In this case, the uneven layer 7 prevents the edges of the uneven formation layer 13 from appearing. In addition, by forming the unevenness forming layer 13 without forming the unevenness layer 7 and then performing a baking process,
The uneven edges of the uneven forming layer 13 may be smoothed.

(Structure of Counter Substrate) In FIG. 5, in the counter substrate 20, a black matrix is formed in a region on the substrate 20 ′, which opposes the vertical and horizontal boundary regions of the reflective electrodes 9 formed on the TFT array substrate 10. A light-shielding film 23 called a black stripe or the like is formed, and on the upper layer side thereof,
A counter electrode 21 made of an ITO film is formed. Further, on the upper layer side of the counter electrode 21, an alignment film 22 made of a polyimide film is formed.

(Operation of Electro-Optical Device of the Present Embodiment) In the electro-optical device of the present embodiment configured as described above, T
A reflection electrode 9 made of an aluminum film or the like is formed on the FT array substrate 10. Therefore, light incident from the counter substrate 20 side can be reflected on the TFT array substrate 10 side and emitted from the counter substrate 20 side. Therefore, if light modulation is performed by the liquid crystal 50 for each pixel during this period, external light is emitted. A desired image can be displayed by using.

Further, in this embodiment, the unevenness forming layer 13 is formed on the lower layer side of the reflecting electrode 9, and the unevenness of the unevenness forming layer 13 is utilized through the unevenness layer 7 so that the surface of the reflecting electrode 9 is exposed to light. An uneven pattern 8g for scattering is formed. In the uneven pattern 8g, the uneven layer 7 is formed by the uneven layer 7.
The edges and so on do not appear. Therefore, when the image is displayed, the image is displayed by the scattered reflected light, so that the viewing angle dependency can be reduced.

Further, the contact hole 15 and the reflective electrode 9
Since the shape of is a bowl shape as a whole, the reflection angle (θ) of the reflected light reflected from the reflective electrode 9 is 0 °.
The reflection component that is specularly reflected in the (normal direction of the substrate) can be reduced as compared with the conventional one. Therefore, it is possible to effectively prevent the reflection of the user's face or the like, and it is possible to realize sufficient brightness and contrast for a slightly tilted display screen.

[Method of Manufacturing TFT] T having such a structure
A method for manufacturing the FT array substrate 10 will be specifically described with reference to FIGS. 7 to 11.

7 to 11 are sectional views showing a method of manufacturing the contact hole forming portion of the TFT array substrate 10 of this embodiment in the order of steps.

First, as shown in FIG. 7 (A), after preparing a substrate 10 'made of glass or the like which has been cleaned by ultrasonic cleaning or the like, under the temperature condition of the substrate temperature of 150 ° C to 450 ° C,
A base protective film 11 made of a silicon oxide film is formed on the entire surface of the substrate 10 ′ by a plasma CVD method to a thickness of 100 nm to 500 n.
It is formed to a thickness of m. The raw material gas at this time is, for example, a mixed gas of monosilane and laughing gas (dinitrogen monoxide) or TEOS (tetraethoxysilane: Si (OC ₂
H ₅ ) ₄ ) and oxygen, or disilane and ammonia can be used.

Next, under the temperature condition of the substrate temperature of 150 ° C. to 450 ° C., the semiconductor film 1 made of an amorphous silicon film is deposited on the entire surface of the substrate 10 ′ by the plasma CVD method to a thickness of 30 nm to 30 nm.
It is formed to a thickness of 100 nm. As the raw material gas at this time, for example, disilane or monosilane can be used. Next, the semiconductor film 1 is irradiated with laser light to perform laser annealing. As a result, the amorphous semiconductor film 1 is once melted and crystallized through a cooling and solidifying process.
At this time, the irradiation time of the laser beam to each area is very short, and the irradiation area is local to the entire substrate, so that the entire substrate is not heated to a high temperature at the same time. Therefore, even if a glass substrate or the like is used as the substrate 10 ', deformation or cracking due to heat does not occur.

Next, by etching the semiconductor film 1 on the surface of the semiconductor film 1 through the resist mask 551 by using a photolithography technique, as shown in FIG. 7B, the island-shaped semiconductor film 1 ( A semiconductor film for forming an active layer is formed in a separated state.

Next, under a temperature condition of 350 ° C. or lower, the gate insulating film 2 made of a silicon oxide film or the like is formed on the entire surface of the substrate 10 ′ by the CVD method or the like to a surface of the semiconductor film 1 by 50 n.
It is formed to a thickness of m to 150 nm. As the raw material gas at this time, for example, a mixed gas of TEOS and oxygen gas can be used. The gate insulating film 2 formed here may be a silicon nitride film instead of the silicon oxide film.

Next, although not shown, impurity ions are implanted into the extended portion 1f of the semiconductor film 1 through a predetermined resist mask to form a storage capacitor 60 between the capacitor line 3b and the storage line 60. An electrode is formed (see FIGS. 4 and 5).

Next, as shown in FIG. 7C, a metal film made of aluminum, tantalum, molybdenum or the like for forming the scanning lines 3a or the like is formed on the entire surface of the substrate 10 'by the sputtering method or the like. The conductive film 3 made of an alloy film or a laminated film containing any of the above
After forming to a thickness of ˜800 nm, a resist mask 552 is formed by using a photolithography technique.

Next, the conductive film 3 is dry-etched through the resist mask to form scanning lines 3a (gate electrodes), capacitance lines 3b, etc., as shown in FIG. 7D.

Next, on the side of the pixel TFT section and the N-channel TFT section (not shown) of the drive circuit, using the scanning line 3a and the gate electrode as a mask, about 0.1 × 10 ¹³ / cm ² 〜.
By implanting low-concentration impurity ions (phosphorus ions) with a dose amount of about 10 × 10 ¹³ / cm ² , the low-concentration source region 1b and the low-concentration drain region 1c are formed in a self-aligned manner with respect to the scanning line 3a. Here, since it is located right below the scanning line 3a, the portion into which the impurity ions are not introduced becomes the channel forming region 1a 'of the semiconductor film 1 as it is.

Next, as shown in FIG. 8A, the pixel TF
At the T portion, a resist mask 553 wider than the scanning line 3a (gate electrode) is formed to add high concentration impurity ions (phosphorus ions) to about 0.1 × 10 ¹⁵ / cm ² to about 10 × 1.
Implantation is performed with a dose amount of 0 ¹⁵ / cm ² to form the high concentration source region 1a and the drain region 1d.

Instead of these impurity introduction steps, a high-concentration impurity (phosphorus ion) is implanted in a state where a low-concentration impurity is not implanted and a resist mask wider than the gate electrode is formed. And the drain region may be formed. Alternatively, a high-concentration impurity may be implanted using the scanning line 3a as a mask to form a source region and a drain region having a self-aligned structure.

Although not shown, the N-channel TFT portion of the peripheral drive circuit portion is formed by such a process, but at this time, the P-channel TFT portion is covered with a mask. Further, when forming the P-channel TFT portion of the peripheral drive circuit, the pixel portion and the N-channel TFT portion are covered and protected with a resist, and the gate electrode is used as a mask to form about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ²
By implanting boron ions with a dose of, a P-channel source / drain region is formed in a self-aligned manner.

At this time, as in the case of forming the N-channel TFT portion, the gate electrode is used as a mask to form about 0.1 × 10 ¹³ /
After a low concentration impurity (boron ion) is introduced at a dose amount of cm ² to about 10 × 10 ¹³ / cm ² to form a low concentration region in the polysilicon film, a mask wider than the gate electrode is formed. And a high concentration of impurities (boron ions) is about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ^2.
It is also possible to form a source region and a drain region of an LDD structure (lightly doped drain structure) by implanting with a dose amount of. Alternatively, the source region and the drain region of the offset structure may be formed by implanting high-concentration impurities (boron ions) in a state where a mask wider than the gate electrode is formed without implanting low-concentration impurities. . By these ion implantation steps, CMOS
(Complementary MOS: Complementary MOS
It is possible to embed the peripheral drive circuit in the same substrate.

Next, as shown in FIG. 8B, the scanning line 3
A first interlayer insulating film 4 made of a silicon oxide film or the like is formed on the surface side of a by a CVD method or the like to have a thickness of 300 nm to 800 nm. The raw material gas at this time is, for example, TEOS.
A mixed gas of oxygen gas and oxygen gas can be used.

Next, a resist mask 554 is formed by using the photolithography technique.

Next, through the resist mask 554, the first
The interlayer insulating film 4 is dry-etched to form contact holes in portions of the first interlayer insulating film 4 corresponding to the source region and the drain region, respectively, as shown in FIG. 8C.

Next, as shown in FIG. 8D, on the surface side of the first interlayer insulating film 4, an aluminum film, a titanium film, a titanium nitride film for forming the data line 6a (source electrode) and the like, After forming a conductive film 6 made of a tantalum film, a molybdenum film, or an alloy film containing any of these metals as a main component to a thickness of 300 nm to 800 nm by a sputtering method or the like,
Resist mask 555 using photolithography technology
To form.

Next, the conductive film 6 is dry-etched through the resist mask 555 to form the data line 6a and the drain electrode 6b as shown in FIG. 9A.

Next, as shown in FIG. 9B, a single film of a silicon nitride film or a silicon oxide film or a silicon nitride film and a silicon oxide film is formed on the surface side of the data line 6a and the drain electrode 6b by the CVD method or the like. The second interlayer insulating film (surface protection film) 5 composed of two films of 100 nm to 80
It is formed to a film thickness of 0 nm (the second interlayer insulating film (surface protection film) 5 may not be formed).

Next, as shown in FIGS. 10A and 10B, an organic photosensitive resin 13a such as an acrylic resin is deposited on the surface of the second interlayer insulating film (surface protection film) 5 in a thickness of 1 to 3 μm. Of the thickness of 1 μm to 3 μm so as to be the lower layer side of the reflective electrode 9 described later by applying the photosensitive resin 13a by spin coating to a thickness of 2 μm and patterning the photosensitive resin 13a using a photolithography technique. 13 is formed. Then, a baking process may be performed to remove the corners.

When the concavo-convex forming layer 13 is formed by using such a photolithography technique, either a negative type or a positive type may be used as the photosensitive resin 13a. In FIG. The case where the resin 13a is of a positive type is shown as an example, and the portion where the photosensitive resin 13a is to be removed is irradiated with ultraviolet rays through the light transmitting portion 511 of the predetermined exposure mask 510.

Next, as shown in FIG. 10C, an organic photosensitive resin 7a such as an acrylic resin is spun on the surface side of the second interlayer insulating film (surface protection film) 5 and the unevenness forming layer 13. Coat to a thickness of 1 μm to 2 μm.

Next, as shown in FIG. 10D, a photolithography technique was used to penetrate and open until the surface of the second interlayer insulating film (surface protective film) 5 was reached (this portion is the final The contact hole 15 is to be formed)
The uneven layer 7 having a thickness of 1 μm to 2 μm is formed. In this case, in the portion where the side wall of the contact hole 15 is to be formed, an inclination having a curved surface of an inverted trapezoidal shape or a bowl shape is naturally formed due to the unevenness of the periphery and the cross section cut along a plane perpendicular to the substrate. Alternatively, the above-described inclination may be formed on the uneven layer 7 itself by half exposure or the like.

Here, since the uneven layer 7 is formed by applying a material having fluidity, the unevenness of the unevenness forming layer 13 is appropriately canceled on the surface of the uneven layer 7 so that there is no edge. An uneven pattern having a smooth shape is formed.

When the uneven pattern having a smooth shape is formed without forming the uneven layer 7, a baking process is performed in the state shown in FIG. 10B to smooth the edges of the uneven layer 13. Any shape may be used.

Next, as shown in FIG. 10E, the second interlayer insulating film (surface protection film) 5 is dry-etched to reach the surface of the drain electrode 6b, and the drain electrode 6 is formed.
b, the contact hole 15 partially erodes the drain electrode 6b, and dry etching is performed so that the contact surface with the reflective electrode 9 described later becomes a dish-shaped gently concave curved surface. Contact hole 1 in the shape of a pickpocket
5 is formed. In this case, the contact hole 15 partially erodes the drain electrode 6b by, for example, gradually reducing the power at the time of dry etching, and the contact surface of the drain electrode 6b with the later-described reflective electrode 9 becomes a dish-shaped gently concave curved surface. It may be.

Next, as shown in FIG. 11A, the aluminum film or the like having a thickness of 50 nm to 200 nm is formed on the surface of the concavo-convex layer 7 and the drain electrode 6b partially corroded by a sputtering method or the like. Metal film 8 with reflective properties
After forming, the resist mask 557 is formed by using the photolithography technique.

Next, the metal film 8 is etched through the resist mask 557, and as shown in FIG.
Reflecting electrode 9 having a predetermined pattern, leaving metal film 8 in a predetermined region
To form. The surface of the reflective electrode 9 formed in this manner has an unevenness of 500 nm due to the unevenness formed by the unevenness forming layer 13.
As described above, the concavo-convex pattern 8g of 800 nm or more is formed, and the concavo-convex pattern 8g has a smooth shape without edges due to the concavo-convex layer 7.

Then, an alignment film (polyimide film) 12 is formed on the surface side of the reflective electrode 9. It contains 5-10% by weight of a solvent such as butyl cellosolve or n-methylpyrrolidone.
Polyimide in which polyimide or polyamic acid is dissolved
After flexographic printing the varnish, heat and cure (baking). Then, the substrate on which the polyimide film is formed is rubbed in a certain direction with a puff cloth made of rayon fibers to arrange the polyimide molecules in a certain direction near the surface. As a result, the liquid crystal molecules are aligned in a certain direction due to the interaction between the liquid crystal molecules filled later and the polyimide molecules.

FIG. 11C schematically shows a laminated state of the concavo-convex forming layer 13, the concavo-convex layer 7, the reflective electrode 9 and the alignment film 12 formed in the reflective region of the TFT array substrate 10. As shown in FIG. 11C, an uneven pattern 8 g is formed on the surface of the reflective electrode 9.

As described above, the TFT array substrate 10
Is completed.

In each of the above embodiments, the active matrix type liquid crystal display device using the TFT as the pixel switching element has been described as an example, but the active matrix type liquid crystal display device using the TFD as the pixel switching element or the passive type liquid crystal display device. Matrix type liquid crystal display device, and further electro-optical material other than liquid crystal (for example, EL light emitting element)
The present invention may be applied to an electro-optical device using.

[Application of Electro-Optical Device to Electronic Equipment] The reflection-type electro-optical device 100 configured as described above can be used as a display portion of various electronic equipments, one example of which is shown in FIGS. This will be specifically described with reference to FIG.

FIG. 12 is a block diagram showing a circuit configuration of an electronic device using the electro-optical device according to the present invention as a display device.

In FIG. 12, the electronic device has a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal display device 74. The liquid crystal display device 74 also includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the electro-optical device 100 described above can be used.

The display information output source 70 is a ROM (Read
Only Memory), RAM (Random)
An image of a predetermined format is provided on the basis of various clock signals generated by the timing generator 73, which includes a memory such as an access memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like. Display information such as a signal is supplied to the display information processing circuit 71.

The display information processing circuit 71 includes various well-known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and executes processing of input display information. Then, the image signal is supplied to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

FIG. 13 shows a mobile personal computer which is an embodiment of the electronic apparatus according to the present invention. The personal computer 80 shown here has a main body 82 having a keyboard 81, and a liquid crystal display unit 83. The liquid crystal display unit 83 includes the electro-optical device 100 described above.

FIG. 14 shows a mobile phone which is another electronic device. The mobile phone 90 shown here has a plurality of operation buttons 91 and a display unit including the electro-optical device 100 described above.

[0100]

As described above, according to the present invention, of the reflected light reflected from the reflective electrode, the intensity of the reflection component that is specularly reflected at the reflection angle (θ) of 0 ° (the normal direction of the substrate). Electro-optics that can reduce the brightness, effectively prevent the reflection of the user's face, etc., and achieve sufficient brightness and contrast for a slightly tilted display screen. A device and a manufacturing method thereof can be provided.

[Brief description of drawings]

FIG. 1 is a plan view of an electro-optical device according to an embodiment of the present invention as viewed from a counter substrate side.

2 is a cross-sectional view taken along the line H-H 'in FIG.

FIG. 3 is an equivalent circuit diagram of various elements, wirings, etc. formed in a plurality of pixels arranged in a matrix in one embodiment of the electro-optical device of the present invention.

FIG. 4 is a plan view showing the configuration of each pixel formed on the TFT array substrate in the embodiment of the electro-optical device of the present invention.

5 is a cross-sectional view of a pixel taken along the line AA ′ in FIG.

FIG. 6 is a cross-sectional view schematically showing the structure of a portion including a contact hole and a reflective electrode in the embodiment of the electro-optical device of the present invention.

FIG. 7 is a cross-sectional view showing, in the order of steps, a method of manufacturing a TFT array substrate in one embodiment of the method of manufacturing the electro-optical device of the present invention.

FIG. 8 is a cross-sectional view showing a method of manufacturing a TFT array substrate after the step shown in FIG. 7 in the order of steps.

FIG. 9 is a cross-sectional view showing the method of manufacturing the TFT array substrate after the step shown in FIG. 8 in the order of steps.

FIG. 10 is a cross-sectional view showing a method of manufacturing a TFT array substrate after the step shown in FIG. 9 in the order of steps.

FIG. 11 is a cross-sectional view showing the method of manufacturing the TFT array substrate after the step shown in FIG. 10 in the order of steps.

FIG. 12 is a block diagram showing a circuit configuration of an electronic device using the electro-optical device according to the invention as a display device.

FIG. 13 is an explanatory diagram showing a mobile personal computer as an example of an electronic apparatus using the electro-optical device of the invention.

FIG. 14 is an explanatory diagram of a mobile phone as another example of an electronic apparatus using the electro-optical device of the invention.

FIG. 15 is a cross-sectional view schematically showing a cross-sectional shape of a reflective electrode used in the electro-optical device of the present invention taken along a plane parallel to the substrate.

FIG. 16 is an explanatory diagram schematically showing a method of measuring a reflection component of reflected light.

FIG. 17 is a plan view schematically showing a portion including a pixel of a conventional electro-optical device.

FIG. 18 is a plan view schematically showing a portion of a pixel of a conventional electro-optical device, which includes a reflective electrode and concave and convex portions for reflection.

FIG. 19 is a cross-sectional view schematically showing a portion in which a contact hole is formed in a pixel of a conventional electro-optical device.

[Explanation of symbols]

1 ... Semiconductor film 1a ... high concentration source region 1a '... Channel forming region 1b ... Low concentration source region 1c ... low concentration drain region 1d ... High-concentration drain region 1f ... extended portion of semiconductor film 2 ... Gate insulating film 3a ... scanning line 3b ... Capacity line 4 ... First interlayer insulating film 5 ... Second interlayer insulating film (surface protective film) 6a ... Data line 6b ... Drain electrode 7 ... uneven layer 7a ... Photosensitive resin for forming uneven layer 8 ... Metal film 8g ... uneven pattern 9 ... Reflective electrode 10 ... TFT array substrate (reflection plate) 10 '... substrate 11 ... Base protection film 13 ... Concavo-convex forming layer 13a ... Photosensitive resin for forming unevenness forming layer 15 ... Contact hole 16a, 16b ... Glass substrate 17 ... Photo multimeter 18 ... Measuring device 19 ... Unevenness for reflection 19a ... Incident light 19b ... Reflected light 20 ... Counter substrate 20 '... substrate 21 ... Counter electrode 30 ... Pixel switching TFT 50 ... Liquid crystal 52 ... Sealing material 53 ... Surrounding area 60 ... Storage capacity 70 ... Display information output source 71 ... Display information processing circuit 72 ... Power supply circuit 73 ... Timing generator 74 ... Liquid crystal display device 75 ... Liquid crystal display panel 76 ... Drive circuit 80 ... Personal computer 81 ... Keyboard 82 ... Main body 83 ... Liquid crystal display unit 90 ... Mobile phone 91 ... Operation button 100 ... Electro-optical device 100a ... Pixel 101 ... Substrate 102 ... Base protection layer 103 ... Source line 104 ... Surface protective film 105 ... Organic insulating film (irregularity forming layer) 106 ... Organic insulating film (uneven layer) 107 ... Contact hole 108 ... Reflective electrode 201 ... Data line drive circuit 202 ... Mounting terminal 204 ... Scan line drive circuit 205 ... Wiring 206 ... Conductive material between substrates

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H042 BA04 BA15 BA20                 2H091 FA14Y FB08 FC01 FC10                       FC26 GA02 GA13 LA17                 2H092 GA29 HA05 JA24 JA46 KA04                       KA12 KA18 KB04 MA13 MA19                       MA27 NA01 PA10 PA11 PA12                       QA07 QA10                 5C094 AA06 BA03 BA29 BA43 CA19                       DA14 DA15 DB04 EA04 EA06                       EA07 EB02 EB04 ED11 FB12                       FB15 HA10

Claims (11)

[Claims] 1. A pair of substrates arranged to face each other while encapsulating and holding an electro-optical material, and a voltage supply wiring formed on the electro-optical material side of one of the pair of substrates,
An insulating film formed on the voltage supply wiring, a contact hole penetrating the insulating film and reaching the voltage supply wiring, and a contact hole provided on the sidewall of the contact hole. An electro-optical device including a reflective electrode electrically connected to a voltage supply wiring via a reflective electrode that reflects incident light from the other substrate side of the pair of substrates, wherein the reflective electrode comprises: The shape of the portion of the contact hole disposed on the side wall and the portion electrically connected to the voltage supply wiring is a plane perpendicular to the substrate on the portion of the contact hole disposed on the side wall. The cross section cut by is inclined with an inverted trapezoidal or bowl-shaped curved surface,
In the portion which is electrically connected to the voltage supply wiring, the cross section taken along a plane perpendicular to the substrate has a dish-shaped gentle concave curved surface, and is a bowl shape as a whole. Optical device. 2. The electro-optical device according to claim 1, wherein a cross-sectional shape of the reflective electrode taken along a plane parallel to the substrate is a circle, an ellipse, or a polygon with rounded corners. 3. An unevenness forming layer for forming unevenness on the surface of the reflective electrode, wherein the insulating film formed on the voltage supply wiring is made of an organic photosensitive resin, and the unevenness forming layer. The electro-optical device according to claim 1, comprising two layers of an uneven layer having an uneven surface shape corresponding to the uneven surface of the uneven formation layer formed on the upper surface. 4. The reflective electrode is electrically connected to the voltage supply wiring while being in contact with or partially invading the voltage supply wiring.
4. The electro-optical device according to any one of to 3. 5. The intensity of the reflection component that is specularly reflected at a reflection angle (θ) of 0 ° (the normal direction of the substrate) of the reflected light reflected from the reflection electrode has a reflection angle (θ) of 15 ° ~
The electro-optical device according to any one of claims 1 to 4, wherein the intensity of the reflection component reflected at 35 ° is 5 times or less. 6. A voltage supply wiring is formed on the electro-optical material side of one of a pair of substrates that are opposed to each other while encapsulating and holding the electro-optical material, and an insulating film is formed on the voltage supply wiring. A reflective electrode that is formed and that forms a contact hole that penetrates the insulating film and reaches the voltage supply wiring, and that reflects incident light from the other substrate side of the pair of substrates on the sidewall of the contact hole. And a method of manufacturing an electro-optical device including electrically connecting a voltage supply wiring and the reflective electrode via the contact hole, wherein the side wall of the contact hole of the reflective electrode. The shape of the portion disposed on the contact hole and the portion electrically connected to the voltage supply wiring is reverse to the cross section obtained by cutting the portion disposed on the side wall of the contact hole in a plane perpendicular to the substrate. Trapezoid or bowl shape And has a consisting of a curved surface inclined,
In a portion electrically connected to the voltage supply wiring, a cross section taken along a plane perpendicular to the substrate has a dish-shaped gentle concave curved surface, and is formed into a bowl shape as a whole. A method for manufacturing a characteristic electro-optical device. 7. The contact hole is formed so that a cross-sectional shape of the reflective electrode taken along a plane parallel to the substrate is a circle, an ellipse, or a polygon with rounded corners. A method for manufacturing the electro-optical device according to item 1. 8. The insulating film is formed on the voltage supply wiring, and the insulating film is formed on the voltage supply wiring when the contact hole penetrating the insulating film and reaching the voltage supply wiring is formed. As the above, a concavo-convex forming layer made of an organic photosensitive resin for forming concavities and convexities on the surface of the reflective electrode is formed, and then, on the concavo-convex forming layer, a surface concavo-convex shape corresponding to the concavo-convex shape 8. The method of manufacturing an electro-optical device according to claim 6, wherein an uneven layer made of an organic photosensitive resin having: is formed, and then the contact hole is formed by penetrating the uneven layer. 9. The contact hole is formed by penetrating the concavo-convex layer using a photolithography technique.
The voltage supply wiring is formed by partially eroding the voltage supply wiring using a dry etching technique.
A method for manufacturing an electro-optical device according to any one of 1. 10. The electrically connecting the reflection electrode in a state of abutting or partially invading the voltage supply wiring.
10. The method for manufacturing an electro-optical device according to any one of 9 to 10. 11. The intensity of the reflection component that is specularly reflected at a reflection angle (θ) of 0 ° (the normal direction of the substrate) of the reflected light reflected from the reflection electrode is the reflection angle (θ). 15 °
The method for manufacturing an electro-optical device according to any one of claims 6 to 10, wherein an electro-optical device having an intensity of a reflection component reflected at ˜35 ° is 5 times or less is obtained.