JP2003068995A - Method for manufacturing thin film device substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film device substrate capable of transferring a thin film device layer from a production substrate to an actual substrate in a short time without damaging the thin film device layer or the actual substrate. I will provide a. SOLUTION: An intermediate substrate 106 provided with a through hole a is bonded to a thin film device layer 103 formed on a production substrate 101 via a first adhesive layer 105. The manufacturing substrate 101 is peeled off from the thin film device layer 103. An actually used substrate is attached to the peeled and removed surface of the manufacturing substrate 101. The adhesive force of the first adhesive layer 105 is weakened by wet treatment using a chemical solution, and the intermediate substrate 106 is peeled off from the thin film device layer 103, whereby the thin film device layer 103 is formed on an actual substrate having desired characteristics. Is transferred to obtain a thin film device substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film device substrate which is preferably used for a flat display panel using liquid crystal or electroluminescence, and more particularly to a thin film device layer formed on the manufacturing substrate. The present invention relates to a method of manufacturing a thin film device substrate which is transferred onto an actually used substrate having the characteristics of 1.

[0002]

2. Description of the Related Art A portable electronic device such as a mobile phone or a portable terminal has a thin film device substrate formed by forming a thin film device on the substrate. In recent years, as these portable electronic devices have been further miniaturized, thin film device substrates are required to be further thinned, lightened, and robust. Therefore, thinning and weight reduction of the substrate on which the thin film device is formed are being studied.

By the way, a thin film device is manufactured at a high temperature,
It is performed in an environment called vacuum. Therefore, for example, in a liquid crystal display device using a thin film transistor, it is necessary to use a quartz substrate that can withstand a temperature of 1000 ° C. or a glass substrate that can withstand a temperature of 500 ° C., and the substrate used during manufacturing is limited in material. become. However, the thinning of these substrates has already reached its limit, and in the case of further thinning, the substrate size has to be reduced in order to compensate for the reduction in rigidity, resulting in a decrease in productivity. . Further, in these substrates, the robustness of the substrates is drastically reduced as they become thinner, which is a problem in practical use.

On the other hand, there is an attempt to directly manufacture a thin film transistor on a plastic substrate which is thin, lightweight and rugged, but it is difficult to carry out it from the viewpoint of heat resistance in manufacturing the thin film transistor.

Therefore, a technique for transferring a thin film device formed on a manufacturing substrate having a high heat resistance temperature to an actually used substrate having desired characteristics has been studied. Both single transfer and double transfer have been studied for this transfer process. Of these, double transfer is easy to apply to the current process because there is no upside-down of the thin film device layer with respect to the substrate.

When a thin film device substrate is manufactured by double transfer, first, a thin film device is formed on the manufacturing substrate,
The thin film device is covered with a protective film to form a thin film device layer. Next, a flat intermediate substrate is attached to the thin film device layer via the adhesive layer, and then the first transfer for peeling and removing the production substrate is performed. Then, the actual substrate having the desired characteristics is attached to the surface from which the production substrate has been peeled and removed, and then the adhesive strength of the adhesive layer is weakened by heat treatment, or the adhesive force of the adhesive layer is weakened by immersion in a chemical solution. The second transfer that removes and removes the intermediate substrate is performed.
As a result, a thin film device substrate obtained by providing a thin film device layer on an actually used substrate is obtained.

[0007]

However, in the transfer technique as described above, the following problems occur when the intermediate substrate bonded together via the adhesive is peeled off.

That is, when the adhesive strength of the adhesive layer is weakened by heat treatment in order to peel off the intermediate substrate, it is necessary to raise the temperature of the adhesive layer to about 100 ° C. The entire bonded structure including the thin film device layer is heated. Therefore, due to the difference in thermal contraction and expansion between each material, the thin film device layer may be cracked.
When the actually used substrate is formed of a plastic material having low heat resistance, the actually used substrate is deteriorated.

In order to prevent this, the adhesive layer may be formed by using an adhesive (for example, paraffin; melting point 50 ° C.) whose adhesive strength weakens at a lower temperature. However, since such an adhesive is generally soft, the thin film device layer cannot be protected in a series of working steps, and for example, when the production substrate is peeled and printed, the thin film device layer is cracked or wrinkled.
There is a problem saying that is entered.

Further, when the adhesive strength of the adhesive layer is weakened by immersion in the chemical solution, it is necessary that the chemical solution is sufficiently impregnated into the narrow space between the thin film device layer and the intermediate substrate. For this reason, the larger the substrate, the longer it takes for the chemical solution to soak into the central portion of the substrate, and there is a problem in that productivity is not improved.

Therefore, the present invention provides a method of manufacturing a thin film device substrate capable of transferring a thin film device layer from a production substrate to a practical substrate without damaging the thin film device or the practical substrate and in a short time. However, it is an object of the present invention to improve the yield of the thin film device substrate and the productivity.

[0012]

The present invention for solving the above problems is a method for manufacturing a thin film device substrate,
In the first manufacturing method, the thin film device layer formed on the manufacturing substrate is bonded to an intermediate substrate having a through hole via an adhesive layer, and at least a part of the manufacturing substrate is peeled off from the thin film device layer. After that, an actual substrate is attached to the peeling-removed surface, and then the adhesive force of the adhesive layer is weakened by a wet process using a chemical solution to peel off the intermediate substrate from the thin film device layer.

In the first manufacturing method as described above, since the through hole is provided in the intermediate substrate, the intermediate substrate and the thin film device layer are used in the wet process for peeling and removing the intermediate substrate from the thin film device layer. The chemical liquid is supplied not only from the outer peripheral side of the intermediate substrate but also from the through-hole to the adhesive layer between and. Therefore, the chemical liquid can be more efficiently supplied to the entire adhesive layer, and the time required for the step of removing and removing the intermediate substrate by this wet treatment is shortened. Further, since the peeling removal of the intermediate substrate is performed by the wet process, the intermediate substrate is peeled off without applying a load to the thin film device layer.

In the second manufacturing method, the intermediate substrate is bonded to the thin film device layer formed on the manufacturing substrate via the adhesive layer composed of a plurality of layers, and at least a part of the manufacturing substrate is attached to the thin film device layer. After peeling and removing the intermediate substrate from the thin film device layer by peeling and removing from the thin film device layer, the peeling and removing surface is bonded to the actually used substrate, and then the adhesive force of one of the adhesive layers is weakened. There is.

In the second manufacturing method as described above, a plurality of adhesive layers for adhering the intermediate substrate to the thin film device layer are provided, so that the adhesive layer (first layer) on the thin film device layer side is formed. The adhesive layer (second layer) on the side of the intermediate substrate can be made of a different adhesive. For this reason, even when the adhesive material of the first layer on the thin film device layer side is selected for the purpose of protecting the thin film device layer, separately from this, it is intended to facilitate peeling and removal of the intermediate substrate. The adhesive quality of the second layer on the side of the intermediate substrate can be selected. Therefore, it is possible to facilitate peeling and removal of the intermediate substrate while protecting the thin film device layer.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. Here, a method of manufacturing a thin film device substrate that is preferably used for driving a display panel mounted on, for example, a mobile phone, a mobile phone information terminal, and other electronic devices will be described.

(First Embodiment) FIGS. 1 to 4 are a sectional process view and a plan view for explaining a first embodiment of the present invention. Based on these drawings, a thin film device of the first embodiment will be described. A method of manufacturing the substrate will be described.

First, as shown in FIG. 1A, a protective layer 102 is formed on a heat-resistant manufacturing substrate 101 such as a glass substrate or a quartz substrate. The protective layer 102 is preferably made of a material that will serve as a stopper when the manufacturing substrate 101 is removed later. Therefore, for example, when the production substrate 101 is removed by etching using a hydrofluoric acid aqueous solution, the protective layer 102 is made of a material having resistance to the hydrofluoric acid aqueous solution. Examples of such a material include molybdenum (Mo), tungsten (W), stainless steel, inconel, amorphous Si, amorphous Si containing hydrogen, polycrystalline Si, diamond, or diamond-like carbon. . Here, as an example, the protective layer 102 made of a Mo thin film (film thickness 500 nm) is formed by a sputtering method.

Next, the thin film device layer 103 is formed on the protective layer 102. The thin film device layer 103 is a layer in which thin film devices such as thin film transistors, thin film diodes, and capacitors and resistors formed on the protective layer 102 are covered with a protective film made of silicon oxide or silicon nitride.

Here, the thin film device is formed at a film forming temperature of 50 when the manufacturing substrate 101 is a glass substrate.
It is performed by a low temperature polysilicon technology in which the temperature is kept at 0 ° C. or lower, or an amorphous silicon technology in which the film forming temperature is kept at 400 ° C. or lower. On the other hand, when the production substrate 101 is made of a quartz substrate, the low temperature polysilicon technique, the amorphous silicon technique, or the high temperature polysilicon technique is used.

Next, as shown in FIG. 1B, an adhesive is applied on the thin film device layer 103 to form a first adhesive layer 105. The first adhesive layer 105 is preferably made of a material having resistance to an etching solution used when the manufacturing substrate 101 is removed by etching in a later step. For example, when the manufacturing substrate 101 made of a glass substrate or a quartz substrate is removed by etching with an etching solution using an aqueous solution of hydrofluoric acid, the first adhesive layer 105 is made of an adhesive having resistance to the aqueous solution of hydrofluoric acid.
Is preferably configured. Furthermore, in order to prevent the thin film device layer 103 from being affected when forming the first adhesive layer 105, the first adhesive layer 105
Is preferably composed of a thermoplastic adhesive whose melting point does not exceed 200.degree.

Examples of the adhesive constituting the first adhesive layer 105 include, for example, ethylene-vinyl acetate thermoplastic elastomer, styrene-butadiene block copolymer, styrene-ethylene-butylene block copolymer,
Styrene-isoprene block copolymer, ethylene-vinyl chloride copolymer, acetate acetate resin, polyvinyl chloride, polyethylene, polypropylene, polymethylpentene, polybutene, thermoplastic polybutadiene, polystyrene, polybutadiene, polyvinyl acetate, polymethylmethacrylate , Polyvinylidene chloride, polyvinyl alcohol, polytetrafluoroethylene, ethylene polytetrafluoroethylene copolymer, acrylonitrile-styrene copolymer (AS resin), acrylonitrile butadiene styrene (ABS resin), ionomer, AAS resin, A
CS resin, polyacetal, polycarbonate, polyphenylene ether, polyethylene terephthalate, polybutylene terephthalate, polyarylate, polysulfone, polyether sulfone, polyimide, polyamide,
Polyamideimide, polyphenylene sulfide, polyoxybenzoyl, polyetheretherketone, polyetherimide, liquid crystal polyester, cellulosic plastics (cellulose acetate, cellulose acetate butyrate, ethylcellulose, celluloid cellophane), polyolefin,
Examples thereof include polyurethane, the above copolymers and polymer alloys, wax, paraffin, coal tar, rosin, natural rubber and fluororubber. And
The first adhesive layer 105 is composed of at least one of these materials as a component.

When the first adhesive layer 105 is made of rosin, for example, the thin plate device layer 103 is heated to 80 ° C. to 140 ° C. by heating from the manufacturing substrate 101 side by the hot plate 10. Then, the adhesive (rosin) is melted and applied on the heated thin film device layer 103, thereby forming the first adhesive layer 105. The formation of the first adhesive layer 105 is not limited to the application by heating and melting, and the first adhesive layer 105 may be formed by a method appropriately selected depending on the material of the adhesive forming the first adhesive layer 105. And

Although not shown here, when the first adhesive layer 105 is formed, the first adhesive layer 1 is formed.
The exposed side surface of the thin film device layer 103 may be covered with 05. As a result, the first adhesive layer 105 serves as a seal that protects the thin film device layer 103 against an etching solution (for example, a hydrofluoric acid aqueous solution) used when the manufacturing substrate 101 is removed by etching in a later step. The seal may be made of a material different from that of the first adhesive layer 105.

Next, as shown in FIG. 1C, the intermediate substrate 1 is formed on the thin film device layer 103 via the first adhesive layer 105.
06 is pasted together. The intermediate substrate 106 is a plate-shaped member provided with a through hole a. The plate-shaped material that constitutes the intermediate substrate 106 will be manufactured by the manufacturing substrate 1 in a later step.
It is preferable to be composed of a material having resistance to an etching solution used for removing 01 by etching. For example, a manufacturing substrate 10 made of a glass substrate or a quartz substrate
When 1 is removed by etching with an etching solution using a hydrofluoric acid aqueous solution, the intermediate substrate 106 is Mo (molybdenum), W (tungsten), Inconel (Inconel 625), stainless steel having resistance to the hydrofluoric acid aqueous solution. And the like, or glass plates coated with these metals, ceramics plates, or plastic plates such as polycarbonate, polyethylene terephthalate, polyether sulfone, polyolefin, and polyimide.

FIG. 2 shows a plan view of the intermediate substrate 106. As shown in this figure, the intermediate substrate 106 is provided with a plurality of through holes a in a plate-shaped material, and preferably has a narrow pitch (for example, 3 mm intervals) within a range where the strength of the plate-shaped material is not impaired.
Then, it is assumed that the through holes a are evenly provided on the entire surface of the plate-shaped material. Further, the shape of the through hole a is not limited to the circular shape illustrated. In addition, these through holes a
May be a hole formed mechanically in the plate-shaped material, or a hole formed by etching using a resist pattern formed by a lithography technique as a mask, and the formation method is limited. It will not be done.

Then, as shown in FIG. 1 (3), the intermediate substrate 106 having such a structure is attached to the first adhesive layer 105.
To bond on the thin film device layer 103 via
For example, following the formation of the first adhesive layer 105, the intermediate substrate 106 is placed on the first adhesive layer 105 in a state of being melted by heating with the hot plate 10, and then the first adhesive layer 105. (That is, the manufacturing substrate 10
1. The laminated body of the thin film device layer 103, the first adhesive layer 105 and the intermediate substrate 106 is cooled to room temperature). At this time, in order to completely remove the air bubbles in the first adhesive layer 105, the intermediate substrate 106 is replaced with the manufacturing substrate 10.
Air bubbles between the first adhesive layer 105 and the intermediate substrate 106 are removed from the intermediate substrate 106 by cooling the laminate while pressing it to the 1 side or by bonding and cooling the intermediate substrate 106 in a vacuum. The bubbles can be degassed from the through holes a.

The steps described with reference to FIGS. 1 (2) and 1 (3) are the same as the first adhesive layer 1 on the intermediate substrate 106.
05 may be formed, and the manufacturing substrate 101 may be placed on the first adhesive layer 105 via the thin film device layer 103.

As described above, the thin film device layer 103
After adhering the intermediate substrate 106 to the substrate 1, the manufacturing substrate 101 is removed as shown in FIG. 3A, whereby the first transfer of transferring the thin film device layer 103 from the manufacturing substrate 101 to the intermediate substrate 101 is performed. . At this time, for example, the production substrate 101 is immersed in the etching solution L1 to remove the production substrate 101.
Are removed by etching (peeling removal). Here, for the purpose of removing the production substrate 101 made of a glass substrate or a quartz substrate by etching, etching is performed using an etching solution L1 containing at least a hydrofluoric acid aqueous solution. At this time, the concentration of the etching solution L1 and the etching time are selected such that the manufacturing substrate 101 can be completely etched. For example, a hydrofluoric acid aqueous solution having a weight concentration of 50% is used as the etching solution for 3.5 hours of etching. I do.

Although not shown here, FIG.
As described using (2), the thin film device layer 103
When the exposed side surface of the thin film device layer 10 is sealed.
3 is prevented from being affected by the etching solution L1. Further, here, the manufacturing substrate 101 is not necessarily entirely removed by etching, and the manufacturing substrate 1 is not necessary.
A part of 01 may be left on the protective layer 102. However,
In the first embodiment, a case where the manufacturing substrate 101 is entirely removed by etching will be described.

Next, as shown in FIG. 3B, a second adhesive layer 108 is formed on the removal surface of the production substrate 101, that is, the surface of the protective layer 102 in this case. For the second adhesive layer 108, when a process of weakening the adhesive force of the first adhesive layer 105 is performed in the subsequent peeling process of the intermediate substrate 106, a material that can maintain the adhesive force by this process is selected. I will. Such a second adhesive layer 1
08, a thermosetting adhesive, an ultraviolet curable adhesive,
Water-soluble adhesives, hot melt adhesives, thermoplastic adhesives and the like are used.

As an example, when the first adhesive layer 105 is made of the above-mentioned rosin, this second adhesive layer 108 is used.
Examples include acrylic UV-curable adhesives, epoxy adhesives, urea resin adhesives, urethane adhesives, phenol adhesives, melamine adhesives, emulsion adhesives, acrylic adhesives. , Cyanoacrylate ester adhesive, chloroprene rubber adhesive, nitrile rubber adhesive, urethane rubber adhesive, cyanoacrylate adhesive, styrene butadiene rubber adhesive, natural rubber adhesive, acrylic adhesive Etc. are used.

Second adhesive layer 1 made of such a material
For 08, for example, an adhesive having a reduced viscosity is applied by spin coating. In addition, any coating method other than the spin coating method may be used as long as the thickness of the second adhesive layer 108 can be made uniform.

The second adhesive layer 108 is subjected to a step of further removing the protective layer 102 after removing the manufacturing substrate (101). It may also be formed. However, here, a case where the protective layer 102 is left and the second adhesive layer 108 is formed on the protective layer 108 will be described.

Next, as shown in FIG. 3C, the actually used substrate 109 is attached to the thin film transistor layer 103 via the second adhesive layer 108 applied on the protective layer 102. The actually used substrate 109 used here is used as it is as an element that constitutes the thin film device substrate, and thus may be made of a material that can achieve desired characteristics (for example, thin, lightweight, and robust). Preferably, further, a material having resistance to the heating temperature in the subsequent heat step,
For example, it is preferably made of a material having a heat resistant temperature of 100 ° C. or higher.

Therefore, as the practically used substrate 109, for example, polycarbonate, polyethylene terephthalate, polybutylene terephthalate, polyether sulfone, polyolefin, polypropylene, polybutylene, polyimide, polyamide, polyamideimide, polyetheretherketone, polyetherimide is used. , Polyetherketone, polyarylate, polysulfone, polyphenylene sulfide, polyphenylene ether, polyacetal, polymethylpentene, epoxy resin, diallyl phthalate resin, phenol resin, unsaturated polyester resin, liquid crystal plastic, polybenzimidazole,
A thermosetting polybutadiene or the like, or a single material substrate of the above polymer alloy and fiber reinforced material, or a laminated substrate of the same material, or a laminated substrate containing at least one of these, a metal plate such as stainless steel or aluminum, Alternatively, a single material substrate of a ceramic plate containing alumina (Al ₂ O ₃ ), silica (SiO ₂ ), silicon carbide (SiC), magnesium oxide (MgO), calcium oxide (CaO), or the like, or at least one of them A laminated substrate including one or the like is selected and used as necessary. Note that the actually used substrate 109
When a laminated substrate is used as above, the respective materials are adhered using an adhesive or heat-sealed.

However, when an ultraviolet curable adhesive is used as the second adhesive layer 108, the actually used substrate 109
Is composed of a UV transparent material.

Then, such an actually used substrate 109 is
When the thin film device layer 103 is attached via the second adhesive layer 108, the second adhesive layer 108 is defoamed in a vacuum in order to completely remove the bubbles in the second adhesive layer 108. Then, the practical substrate 109 is attached in a vacuum,
After that, the second adhesive layer 108 is cured. At this time, when the second adhesive layer 108 is made of an ultraviolet curable adhesive, the second adhesive layer 108 is irradiated with ultraviolet rays from the side of the actually used substrate 109 to generate the second adhesive layer.
The adhesive layer 108 is cured to form the thin film transistor layer 10
The actually used substrate 109 is adhered to No. 3.

Next, as shown in FIG. 4 (1), after the second adhesive layer 108 is sufficiently cured and the actual use substrate 109 is adhered to the thin film device layer 103, the wet solution L2 is used. The intermediate substrate 106 is peeled off by the processing. Thus, the thin film device layer 103 is transferred a second time from the intermediate substrate 106 to the actually used substrate 109. At this time, as the chemical liquid L2, one that appropriately dissolves the first adhesive layer 105 used for bonding the intermediate substrate 106 and does not affect the actually used substrate 109 is appropriately selected, for example, acetone. , Isopropyl alcohol (I
PA), n-cyclohexane, ethanol, methanol, ethyl acetate, carbon tetrachloride, dichloroethane, tetrahydrofuran, benzene, toluene, xylene, metacresol and trichlene are used as organic solvents.

Here, as an example, the first adhesive layer 10
When 5 is made of rosin and the actually used substrate 109 is made of polycarbonate, IPA is used as the chemical liquid L2, and the first adhesive layer 1 is formed from the through hole a or the peripheral portion of the intermediate substrate 106.
The first adhesive layer 105 is etched or the adhesive force is weakened by supplying the chemical liquid L2 to 05, whereby the intermediate substrate 106 is peeled from the thin film device layer 103 side. At this time, the intermediate substrate 106 and the thin film device layer 10
The laminate of 3 and the actually used substrate 109 may be dipped in the chemical liquid L2. When the first adhesive layer 105 is made of rosin and the actual substrate 109 is made of polyolefin, acetone may be used as the chemical liquid L2.

Then, even after the intermediate substrate 106 is peeled off, the first adhesive layer 10 of the thin film device layer 103 is further formed.
By immersing the 5th side in the chemical liquid L2, as shown in FIG. 4B, the first adhesive layer (105) on the thin film device layer 103 is completely dissolved and removed.

In the wet process using the chemical liquid L2, ultrasonic waves may be applied to the chemical liquid L2.

From the above, as shown in FIG.
The thin film device substrate 100 is obtained by transferring the thin film device layer 103 onto the actually used substrate 109.

According to the manufacturing method of the first embodiment described above, the through hole a is provided in the intermediate substrate 106 used for the first transfer described with reference to FIG. Therefore, in the wet process at the time of the second transfer in which the intermediate substrate 106 described with reference to FIG. 4A is peeled off from the thin film device layer 103, the intermediate substrate 106 and the thin film device layer 103 are separated from each other. The chemical liquid L2 is supplied to the first adhesive layer 105 not only from the outer peripheral side of the intermediate substrate 106 but also from the through hole a. Therefore, the chemical liquid L2 can be more efficiently supplied to the entire first adhesive layer 105, and the time required for the peeling removal step of the intermediate substrate 106 by this wet treatment can be shortened. Further, the intermediate substrate 106 is peeled and removed by a wet process. Therefore, the stacked body of the actually used substrate 109, the thin film device layer 103, and the intermediate substrate 106 is not heated, that is, the transistor 3, the thin film device layer 103, and the actually used substrate 109 are not subjected to the intermediate load. The substrate 106 can be peeled off. Moreover, by using an adhesive having high hardness as the first adhesive layer 105, the thin film device layer 103 can be protected by the first adhesive layer 105.

As a result, the thin film device layer 103 is changed from the manufacturing substrate 101 to the actually used substrate 10 in a short time without damaging the thin film device layer 103 and the actually used substrate 109.
9 can be transferred. Therefore, it is possible to improve the yield and the productivity of the thin film device substrate 100 using a desired actually used substrate without taking heat resistance and the like into consideration. And, it becomes possible to realize robustness. Moreover, in the above manufacturing method, since the transfer is performed twice using the intermediate substrate, there is no upside-down of the thin film device layer, and the existing production line can be used as it is for the manufacturing apparatus, so that the investment efficiency is increased.

In FIG. 5, the thickness of the rosin in the case where the first adhesive layer 105 is made of rosin and IPA is used as the chemical liquid L2 to perform the wet process at the time of the second transfer. (Mm) and the peeling time (h) of the intermediate substrate 106 are shown. Further, FIG. 6 shows, for comparison, a similar relationship in the case of using an intermediate substrate having no through hole. As shown in these figures, it was confirmed that by providing the through hole in the intermediate substrate, the peeling time in the wet process for peeling the intermediate substrate was shortened.

Further, from FIG. 5, when the intermediate substrate 106 having a rosin thickness of 1 mm and a through hole was used, a peeling time of about 1 hour was required.
After peeling off, by further continuing the immersion in the chemical liquid L2 (IPA), the first rosin-containing first solution is formed in about 30 minutes.
The adhesive layer 105 of No. 1 was completely removed. Furthermore, when ultrasonic waves were applied to the chemical liquid L2 (IPA) in this wet treatment, the time until the intermediate substrate 106 was peeled off could be shortened to about 5 minutes.

The peeling time of the intermediate substrate 106 is a value that changes depending on the combination of the material of the first adhesive layer 105 and the chemical liquid L2. Therefore, for example, even when the first adhesive layer 105 is made of rosin having a thickness of 1 mm,
When acetone is used as the chemical liquid L2, the intermediate substrate 106
The peeling time was about 30 minutes, and the first adhesive 105 was completely removed after about 10 minutes.

Further, as described above, the actually used substrate 109
After transferring the thin film device layer 103 to the thin film device layer 1
The circuit operation of the thin film device in No. 03 was performed, and it was confirmed that the operation was performed without problems.

As described above, in the first embodiment, FIG.
As described using (1), the method of peeling the production substrate 101 by etching (chemical treatment) using a hydrofluoric acid aqueous solution has been described. However, the peeling method of the production substrate 101 is not limited to this, and a method of performing mechanical polishing treatment, a method of performing chemical treatment after the mechanical polishing treatment, and further a method of performing chemical mechanical polishing treatment. May be

In the first embodiment described above,
The case where the thin film device layer 103 is formed on the manufacturing substrate 101 made of a quartz substrate or a glass substrate with the protective layer 102 interposed therebetween has been described. However, the present invention is also applicable to the case of using a silicon-on-insulator (SOI) substrate having a quartz substrate or a glass substrate as the manufacturing substrate 101. In this case, since the etching rate differs between quartz or glass and silicon, the silicon portion in SOI automatically serves as a protective layer. Therefore, it is not necessary to form a special protective layer.

Further, the manufacturing substrate 101 is made of silicon, gallium arsenide, gallium phosphide, silicon carbide (Si
C) or sapphire. In this case, the protective layer 102 is preferably made of a material that will serve as a stopper when the manufacturing substrate 101 made of these materials is removed later.

(Second Embodiment) The second embodiment is the first embodiment.
This is a modification of the embodiment and is different from the first embodiment in that a separation layer is provided between the manufacturing substrate and the thin film device layer. 7A to 7C are sectional process drawings for explaining the second embodiment of the present invention, and a method for manufacturing a thin film device substrate of the second embodiment will be described based on these drawings. still,
The same components as those in the first embodiment are designated by the same reference numerals, and duplicate description will be omitted.

First, as shown in FIG. 7A, the production substrate 101 is made of quartz, and the separation layer 202 is formed on the production substrate 101. The separation layer 202 is made of amorphous silicon containing a large amount of hydrogen, and is formed by a plasma CVD method, a low pressure CVD method, an atmospheric pressure CVD method, an ECR method, or a sputtering method under a condition containing a large amount of hydrogen. Therefore, the film is formed at a lower temperature, but since the film formed at a low temperature has poor adhesion, it may be formed at a low temperature as long as the thin film device is not peeled off in the subsequent steps. desirable. Therefore, for example, in the case of the plasma CVD method, the film formation is performed with the film formation temperature set to 150 ° C.
The separation layer 202 has a thickness of 50 nm or less (for example, 10 nm or less).
(nm).

Next, a thin film device is formed on the separation layer 202 by a high temperature polysilicon technique, and this is covered with a protective film to form a thin film device layer 103. Hereinafter, similarly to the first embodiment, the intermediate substrate 106 is attached to the thin film device layer 103 via the first adhesive layer 105.

Then, the separation layer 202 made of amorphous silicon is irradiated with light H such as ultraviolet rays from the manufacturing substrate 101 side to generate hydrogen in the amorphous silicon forming the separation layer 202. As a result, as shown in FIG. 7B, the thin film device layer 103 and the production substrate 101 are separated with the separation layer 202 made of amorphous silicon as a boundary. On this occasion,
The light H includes, for example, an excimer laser (XeCl wavelength 30
8 nm) light is used. However, 100 nm to 350 nm
If it is the light (ultraviolet light) H, other ultraviolet light sources will cause no problem.

The subsequent steps are performed in the same manner as in the first embodiment to obtain a thin film device substrate obtained by transferring the thin film device layer 103 onto the actually used substrate (109).

Even with such a manufacturing method, the same effect as that of the first embodiment can be obtained.

(Third Embodiment) FIGS. 8 to 9 are sectional process drawings for explaining a third embodiment of the present invention. Based on these drawings, the manufacture of the thin film device substrate of the third embodiment will be described. The method will be described. The same components as those in the first embodiment are designated by the same reference numerals, and duplicate description will be omitted.

First, as shown in FIG. 8A, the thin film device layer 103 is formed on the manufacturing substrate 101 with the protective layer 102 interposed therebetween, as in the first embodiment.

Then, a first film is formed on the thin film device layer 103.
The first layer 205a of the adhesive, which is a part of the adhesive layer, is formed by coating. The first layer 205a may be made of the same material as the first adhesive layer (105) used in the first embodiment, and may be made of a material having a hardness sufficient to protect the thin film device layer 103. preferable. Such a first layer 20
As the adhesive constituting 5a, for example, rosin or the like is used.

Then, for example, by the hot plate 10, rosin is applied to the thin film device layer 103 heated from 80 ° C. to 140 ° C. from the production substrate 101 side, thereby forming the first layer 205a made of rosin.

Although not shown here, the first layer 2
When forming 05a, the exposed side surface of the thin film device layer 103 may be covered with the first layer 205a. As a result, the first layer 205a serves as a seal that protects the thin film device layer 103 against an etching solution (for example, an aqueous solution of hydrofluoric acid) used for removing the manufacturing substrate 101 by etching in a later step. In addition, the seal is formed by the first layer 205
It may be made of a material different from a.

On the other hand, as shown in FIG. 8 (2), the intermediate substrate 1 for temporarily transferring the thin film device layer (103).
No. 06 is prepared, and the second layer 205b of the adhesive, which is a part of the first adhesive layer, is applied and formed on the intermediate substrate 106.

The intermediate substrate 106 can be made of the same material as that of the intermediate substrate of the first embodiment, and the through hole a is provided like the intermediate substrate of the first embodiment.

The second layer 205b is made of the same material as the first adhesive layer (105) used in the first embodiment, and has a lower strength than the above-mentioned first layer (205a) due to immersion in a chemical solution. It is preferable to use an adhesive that shortens the time. For example, when the first layer (205a) is made of rosin, paraffin is preferably used as the second layer 205b. And, for example, hot plate 1
Paraffin is applied to the intermediate substrate 106 heated to about 50 ° C. by 0, thereby forming the second layer 205b made of paraffin on the intermediate substrate 106.

Then, as shown in FIG. 8C, the intermediate substrate 106 is bonded onto the thin film device layer 103 via the first layer 205a and the second layer 205b. At this time, for example, the surface of the first layer 205a is heated to about 50 ° C. from the manufacturing substrate 101 side by the hot plate 10 and the second layer 205b is placed so as to face the first layer 205a. The second layer 205b is melted and the thin film device layer 103 and the intermediate substrate 106 are adhered to each other.

As described above, the first layer 205a and the second layer 205a
After the intermediate substrate 106 is attached to the thin film device layer 103 via the first adhesive layer 205 in which the layer 205b is laminated, the same procedure as described with reference to FIG. 3A in the first embodiment is performed. Then, the production substrate 101 is removed from above the thin film device layer 103, and then, as shown in FIG. 9A, the actually used substrate 109 is attached to the release surface of the production substrate (101) via the second adhesive layer 108. Let it adhere.

Then, as shown in FIG. 9 (2), the chemical liquid L
The intermediate substrate 106 is peeled off by a wet process using 2. At this time, the same chemical liquid L2 as in the first embodiment is used as the chemical liquid L2. For example, here, n-cyclohexane is used as the chemical liquid L2 for the purpose of dissolving the second layer 205b made of paraffin. Then, from the through hole a and the peripheral portion of the intermediate substrate 106 to the second layer 2
By supplying the chemical liquid L2 to 05b, the second layer 20
5b is etched or the adhesive force is weakened, whereby the intermediate substrate 106 is peeled from the thin film device layer 103 side. At this time, the laminate of the intermediate substrate 106, the thin film device layer 103, and the actually used substrate 109 may be immersed in the chemical liquid L2.

Then, the second layer 20 remaining on the thin film device layer 103 even after the intermediate substrate 106 is peeled off.
By immersing 5b in the chemical liquid L, the second layer 205b and the first layer 205a are completely removed from above the thin film device layer 103. At this time, when the second layer 205b is completely dissolved and removed, the chemical liquid L2 is replaced with the chemical liquid L3, and the first layer 205
The a may be etched away more quickly.
For example, when the first layer 205a is made of rosin, by using IPA as the chemical liquid L3, the first layer made of rosin is formed.
The layer 205a may be removed faster.

It should be noted that ultrasonic waves may be applied to the chemicals L2 and L3 during the treatment with the chemicals L2 and L3.

By the above, as shown in FIG. 9 (4),
The thin film device substrate 100 is obtained by transferring the thin film device layer 103 onto the actually used substrate 109.

According to the above manufacturing method, as in the first embodiment, the through hole a is provided in the intermediate substrate 106 used for the first transfer described with reference to FIG. 9B, and the intermediate substrate 106 is provided. Since the peeling removal of 1 is performed by a wet process, the same effect as that of the first embodiment can be obtained. Moreover, the first adhesive layer 205 between the intermediate substrate 106 and the thin film device layer 103 has a laminated structure (for example, 2
Layers). Therefore, for the purpose of protecting the thin film device layer 103, the first layer 2 on the thin film device layer 103 side is formed.
Even when the adhesive material of 05a is selected, the second layer 205b on the intermediate substrate 106 side is bonded with a high etching rate by the chemical liquid L2 for the purpose of facilitating the peeling and removal of the intermediate substrate 106 separately. The quality of the drug can be selected. Therefore, it is possible to facilitate peeling and removal of the intermediate substrate 106 while protecting the thin film device layer 103 with the first layer 205a. Therefore, the peeling time of the intermediate substrate 106 can be further shortened as compared with the method of the first embodiment.

For example, in the third embodiment, the intermediate substrate 1
Although n-cyclohexane was used as the chemical liquid L2 for the purpose of removing 06, the paraffin forming the second layer 205b was n.
-The speed of dissolution in cyclohexane is faster than the speed of dissolution of rosin in IPA described in the first embodiment. Therefore, the intermediate substrate 106 and the second layer 205 are added to the chemical liquid L2.
About 30 minutes after the immersion of b, the intermediate substrate 106 was peeled off. After that, in a few minutes, the paraffin (second layer 205
All b) were etched. Then, when it was immersed in n-cyclohexane as it was, the first layer 205a made of rosin was completely dissolved in about 30 minutes.

After the transfer, the thin film device layer 103
The circuit operation of the thin film device was performed, and it was confirmed that it worked without problems.

In the method of the third embodiment, as described in the second embodiment, a separation layer made of, for example, amorphous silicon is provided between the manufacturing substrate 101 and the thin film device layer 103, and Manufacturing substrate 101 by light irradiation to the separation layer
The thin film device layer 103 and the thin film device layer 103 may be separated.

Further, in the above-described third embodiment, the quartz substrate or the glass substrate is used as the manufacturing substrate 1 as in the first embodiment.
The present invention is also applicable to the case of using a silicon-on-insulator (SOI) substrate of No. 01, and as the manufacturing substrate 101, silicon, gallium arsenide, gallium phosphide, silicon carbide (SiC), or sapphire may be used.

(Fourth Embodiment) The fourth embodiment is the third embodiment.
This is a modification of the embodiment and is different from the third embodiment in that heating is performed when the intermediate substrate is peeled and removed.

That is, in the manufacturing method of the fourth embodiment, as shown in FIG. 10A, first, in the same manner as described in the third embodiment, the thin film device layer on the manufacturing substrate (101). Until the intermediate substrate 206 is attached to 103 via the first adhesive layer 205 having a laminated structure, the manufacturing substrate (101) is removed, and the actually used substrate 109 is attached via the second adhesive layer 108. I do.

At this time, though the through hole may be provided in the intermediate substrate 206, it is not necessary to provide the through hole, and the plate-like intermediate substrate 206 having no through hole is shown in the drawing.

The first layer 205a on the side of the thin film device layer 103 which constitutes the first adhesive layer 205 is the first layer 2
05a is the first adhesive layer (10) used in the first embodiment.
It is preferable that the material is the same as that of 5) and has a hardness that can protect the thin film device layer 103. As such an adhesive material, for example, rosin or the like is used, and here, the first layer 205a is formed using rosin.

On the other hand, the second layer 205b on the side of the intermediate substrate 206 which constitutes the first adhesive layer 205 is made of the same material as the first adhesive layer (105) used in the first embodiment.
In addition, although the hardness is not required, an adhesive material that melts and weakens the adhesive force at a temperature lower than that of the first layer 205a (preferably at a heating temperature not exceeding 100 ° C.) is used.
As such an adhesive, for example, when the first layer 205a is made of rosin, an adhesive material having a low viscosity in a molten state such as paraffin or a hot-melt adhesive having a lower melting point than other rosins is used. It is preferably used, and here, the second layer 205b is made of paraffin. The adhesive material forming the first layer 205a and the second layer 205b is not limited to this, and a wax-based material selected appropriately can be used in combination within the range having the above-mentioned properties. .

After the above, as shown in FIG. 10B, the second layer 2 between the thin film device layer 103 and the intermediate substrate 206 is formed.
By heating 05b, the second layer 205b is melted and its adhesive strength is reduced, and the intermediate substrate 206 is peeled from the thin film device layer 103. At this time, for example, the hot plate 1
The second layer 205b is heated from the side of the actually used substrate 109 by 0. Further, at this time, the second layer 20 having a lower melting temperature
Since only 5b needs to be melted, the actually used substrate 109,
The laminated body of the thin film device layer 103 and the intermediate substrate 206 is heated to 50 ° C. on the hot plate 10 to form the second layer 2
Only the paraffin that constitutes 05b is melted.

Then, when the second layer 205b is melted and its adhesive force is sufficiently weakened, the intermediate substrate 206 is physically (mechanically) peeled off. At this time, the second layer 205b
Is composed of paraffin, the viscosity of the paraffin is very low, so that the thin film device layer 103 is hardly stressed. At this time, the second layer 205b
The heating temperature (5
At 0 ° C.), the rosin forming the first layer 205a does not melt, and the thin film device layer 103 is protected by the first layer 205a.

After that, as shown in FIG. 10C, the second layer 205b and the first layer 205a remaining on the thin film device layer 103 are wet-processed by using the chemical liquid L2.
Are dissolved and removed. At this time, for example, IPA as the chemical liquid L2
Is used to immerse the laminated body in the chemical liquid L2, whereby the first layer 205a is dissolved and removed. At this time, the first layer 2
Since the chemical liquid L2 is supplied to the entire surface of 05a, the first layer 205a quickly dissolves in the chemical liquid L2.

The chemical liquid L2 is not limited to IPA, and a chemical liquid (solvent such as acetone) capable of dissolving the materials forming the first layer 205a and the second layer 205b.
Will be appropriately selected and used. Also, the second layer 205
The chemical liquid L2 may be exchanged with the chemical liquid L3 at the time when all of b is dissolved and removed, and the first layer 205a may be removed by etching faster. Furthermore, when processing with the chemicals L2 and L3, ultrasonic waves may be applied to the chemicals L2 and L3.

As described above, the thin film device substrate 100 obtained by transferring the thin film device layer 103 onto the actually used substrate 109 is obtained as shown in FIG.

According to the above-described manufacturing method, the first adhesive layer 205 for bonding the intermediate substrate 106 to the thin film device layer 103 is made up of a plurality of layers, whereby the first layer on the thin film device layer 103 side is formed. 205a and the second layer 205b on the intermediate substrate 206 side can be made of different adhesives. Therefore, even when the adhesive material of the first layer 205a on the thin film device layer 103 side is selected for the purpose of protecting the thin film device layer 103, the intermediate substrate 2 is separately provided.
The adhesive material of the second layer 205b on the intermediate substrate 206 side can be selected for the purpose of facilitating the peeling and removal of 06. Therefore, it is possible to facilitate peeling and removal of the intermediate substrate 206 while protecting the thin film device layer 103 with the first layer 205a.

In this case, an adhesive having a low melting temperature can be selected as the second layer 205b, and the intermediate substrate 206 can be heated by low temperature heating that does not damage the thin film device layer 103 and the actually used substrate 109. It becomes possible to peel off. Further, since the intermediate substrate 206 can be peeled off by heating and melting the second layer 205, the intermediate substrate 2
The time required for peeling 06 is also short. As a result, the yield of the thin film device substrate 100 and the productivity can be improved.

In the method of the fourth embodiment, as described in the second embodiment, a separation layer made of, for example, amorphous silicon is provided between the manufacturing substrate 101 and the thin film device layer 103, and Manufacturing substrate 101 by light irradiation to the separation layer
The thin film device layer 103 and the thin film device layer 103 may be separated.

In the fourth embodiment described above, the quartz substrate or the glass substrate is used as the manufacturing substrate 1 as in the first embodiment.
It is also applicable when using a silicon-on-insulator (SOI) substrate of No. 01. Further, as in the first embodiment, the manufacturing substrate 101 includes silicon, gallium arsenide, gallium phosphide, silicon carbide (SiC),
Or it may be sapphire.

Furthermore, in each of the above-described embodiments, when the intermediate substrate is peeled off, the first adhesive layer is melted by heating or the first adhesive layer is wet-processed.
The method of etching the adhesive layer of 1. has been described. But,
The peeling of the intermediate substrate is not limited to this.

That is, the first adhesive layer or a part of the layer provided between the intermediate substrate and the thin film device layer is
An intermediate substrate, which is made of an adhesive that is weaker than the adhesive force of the second adhesive layer provided between the actually used substrate and the thin film device layer, while maintaining the adhesive state between the actually used substrate and the thin film device layer. May be mechanically removed by peeling.

By irradiating the first adhesive layer with light, the adhesive force of the first adhesive layer or a part of the layer is increased to the second level.
The intermediate substrate may be mechanically peeled and removed while the adhesive force between the adhesive layer and the adhesive layer is weakened while the adhesive state between the actually used substrate and the thin film device layer is maintained. At this time, it is preferable that the first adhesive layer is irradiated with light from the intermediate substrate side for the purpose of preventing the influence of the light irradiation on the thin film device layer. Therefore, the intermediate substrate should be made of a light transmitting material. And

However, in any of the above methods,
After peeling and removing the intermediate substrate, a step of etching and removing the first adhesive layer remaining on the thin film device layer with a chemical solution is performed.

Further, the present invention is not limited to the method for peeling the production substrate, and the peeling of the production substrate is the first.
A method other than the etching method described in the embodiment and the light irradiation method described in the second embodiment may be used.
For example, between the production substrate and the protective layer, a separation layer made of a material having an etching rate 10 times or more faster than that of the production substrate by a chemical solution for etching and removing the production substrate is provided.
This separation layer may be etched away prior to etching the production substrate, so that the production substrate is detached from the protective layer.

The thin film device substrates obtained by the methods described in the first to fourth embodiments are suitable for driving display panels in, for example, mobile phones, mobile phone information terminals, and other electronic devices. Used for. As a display panel using such a thin film device substrate,
For example, a liquid crystal display panel and an organic electroluminescence display panel can be exemplified. In a liquid crystal display panel, the above-mentioned thin film device substrate is used as an active matrix type driving substrate, and a liquid crystal layer is sealed between this substrate and a counter substrate in which a transparent conductive film is formed on a transparent plastic substrate. . In this liquid crystal display panel, the active matrix type driving substrate may have a color filter layer,
Further, the counter substrate may have a color filter layer. Further, the organic electroluminescence display panel comprises an organic electroluminescence layer provided on the above-mentioned thin film device substrate.

[0098]

As described above, according to the method of manufacturing a thin film device substrate of the present invention, the thin film device layer and the actually used substrate are formed on the manufacturing substrate in a short time without damage. It is possible to transfer the thin film device layer to an actually used substrate having desired characteristics, and it is possible to improve the yield and the productivity of the thin film device substrate that is thin, lightweight, and robust.

[Brief description of drawings]

FIG. 1 is a manufacturing process diagram (1) for explaining a first embodiment.

FIG. 2 is a plan view of an intermediate substrate used in the first embodiment.

FIG. 3 is a manufacturing process diagram (2) for explaining the first embodiment.

FIG. 4 is a manufacturing process diagram (3) for explaining the first embodiment.

FIG. 5 is a graph showing peeling time of an intermediate substrate having a through hole.

FIG. 6 is a graph showing the peeling time of an intermediate substrate having no through holes.

FIG. 7 is a manufacturing process diagram for describing the second embodiment.

FIG. 8 is a manufacturing process diagram (1) for explaining the third embodiment.

FIG. 9 is a manufacturing process diagram (2) for explaining the third embodiment.

FIG. 10 is a manufacturing process diagram for describing the fourth embodiment.

[Explanation of symbols]

100 ... Thin film device substrate, 101 ... Manufacturing substrate, 103
... thin film device layer, 105, 205 ... first adhesive layer (adhesive layer), 106, 206 ... intermediate substrate, 109 ... actually used substrate, 205a ... first layer, 205b ... second layer, L2
… Medicinal solution

Claims (9)

[Claims] 1. A step of adhering an intermediate substrate having a through hole provided on a thin film device layer formed on a production substrate via an adhesive layer, and at least a part of the production substrate from the thin film device layer. A step of peeling and removing, a step of sticking an actually used substrate to the peeling-removed surface of the production substrate, and weakening the adhesive force of the adhesive layer by a wet process using a chemical solution to remove the intermediate substrate from the thin film device layer A method for manufacturing a thin film device substrate, which comprises performing a step of peeling and removing. 2. The method of manufacturing a thin film device substrate according to claim 1, wherein the adhesive layer comprises a plurality of layers. 3. The method of manufacturing a thin film device substrate according to claim 2, wherein the adhesive layer is formed by the first layer on the thin film device layer side and the wet treatment on the intermediate substrate side rather than the first layer. A method of manufacturing a thin film device substrate, comprising a plurality of layers including a second layer having a high rate of decrease in adhesive strength. 4. The method for manufacturing a thin film device substrate according to claim 1, wherein after the intermediate substrate is peeled off and removed, the adhesive layer left on the thin film device layer is removed by a wet treatment using a chemical solution. A method of manufacturing a thin film device substrate, comprising: 5. The method of manufacturing a thin film device substrate according to claim 1, wherein in the wet treatment, ultrasonic waves are applied to the chemical liquid. 6. A step of bonding an intermediate substrate to a thin film device layer formed on a production substrate via an adhesive layer composed of a plurality of layers, and at least a part of the production substrate is peeled off from the thin film device layer. And a step of adhering an actually used substrate to the peeling-removed surface of the production substrate, and a step of weakening the adhesive force of one of the adhesive layers and peeling and removing the intermediate substrate from the thin film device layer. A method for manufacturing a thin film device substrate, which comprises: 7. The method of manufacturing a thin film device substrate according to claim 6, wherein the adhesive layer has a weaker adhesive force to the first layer on the thin film device layer side and to the intermediate substrate side than the first layer. A method for manufacturing a thin film device substrate, comprising a plurality of layers including a second layer. 8. The method of manufacturing a thin film device substrate according to claim 6, wherein when the intermediate substrate is peeled and removed, one of the adhesive layers is formed by heating, light irradiation, or a wet process using a chemical solution. A method for manufacturing a thin film device substrate, comprising: 9. The method for manufacturing a thin film device substrate according to claim 6, wherein after the intermediate substrate is peeled off and removed, the adhesive layer left on the thin film device layer is removed by a wet treatment using a chemical solution. A method for manufacturing a thin film device substrate, comprising: