JP2002353534A - Magnetoresistive element, magnetoresistive magnetic sensor and magnetoresistive magnetic head - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To steepen the sensitivity of a magnetoresistive element in the track width direction so that the substantial track width can be regulated to be narrower. SOLUTION: A magnetoresistive effect element section 10 having a magnetization sensing film, and disposed on both sides of the magnetoresistive effect element section 10 so as to be in contact with or facing an end face of the magnetization sensing film, And a magnetic domain stabilizing film 13 for forming a single magnetic domain. In addition to the regulation, in the magnetoresistive effect element, considering the influence of the substantial magnetic permeability sensitivity distribution by the magnetic domain stabilizing film for making the magnetization sensing film a single magnetic domain, the half width of this sensitivity distribution and the magnetization sensing The sensitivity in the track width direction as a magnetoresistive element is sharpened by adopting a configuration in which the half-value width of the current density distribution perpendicular to the surface of the film is substantially matched.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element, a magnetoresistive magnetic sensor, a magnetoresistive magnetic sensor and a magnetoresistive magnetic element using a spin valve type giant magnetoresistive element or a tunnel magnetoresistive element of a plane perpendicular conduction type. Related to the head.

[0002]

2. Description of the Related Art A magnetic sensor or a magnetic head using a spin valve type giant magnetoresistive element (hereinafter, referred to as a GMR element) or a tunnel magnetoresistive element (hereinafter, referred to as a TMR element) is used as a magnetic sensor or a magnetic head for performing high-sensitivity magnetic detection. The head is in the direction of use.

A high-density magnetic recording medium such as a hard disk
When the recording density of a disc is increased, its H
As a reproducing magnetic head for a DD (hard disk drive), a reproducing magnetic head for reading and writing data with higher sensitivity is required, and a perpendicular magnetic type, that is, CP
A magnetic head using a GMR element and a TMR element in a P (Current Perpedicular to Plane) mode is used.

[0004] In this type of magnetic head, the sensitivity distribution in the track width direction has a characteristic that rises as steeply as possible at the center in the magnetic gap length direction.
The track width can be substantially reduced, and the recording density can be further improved.

Conventionally, the regulation of the substantial track width is conventionally controlled by reducing the width of the counter electrode with respect to the magnetoresistive effect element, thereby controlling the spread of the current path and, hence, the distribution of the current density, in the track width direction. It has been proposed to sharpen the sensitivity distribution (Japanese Patent Laid-Open No.
No. 55512). However, with this configuration, there are problems in manufacturing, such as difficulty in positioning the opposing electrodes to face each other, and further, problems in uniformity of characteristics.

[0006]

SUMMARY OF THE INVENTION According to the present invention, a magnetoresistive effect element having a magnetoresistive effect element portion composed of a GMR element or a TMR element, a magnetoresistive effect type magnetic sensor using the magnetoresistive effect element as a magnetic sensing part, and In a resistance effect type magnetic head, the sensitivity in the track width direction is sharpened so that the substantial track width can be regulated to be smaller.

According to the present invention, in this configuration, the structure can be simplified and the characteristics can be made uniform.

[0008]

In the present invention, the steepening of the sensitivity described above can be achieved not only by controlling the current path width and the current density distribution, but also by making the magnetization sensing film of the magnetoresistive effect element a single magnetic domain. The track width is also specified using the magnetic permeability sensitivity distribution of the magnetic domain stabilizing film for the purpose.

That is, a magnetoresistive element according to the present invention has a magnetoresistive element having a magnetization sensing film, and is provided on both sides of the magnetoresistive element so as to contact or face the end face of the magnetization sensing film. And a magnetic domain stabilizing film of a magnetic sensing film disposed in a direction perpendicular to the surface of the magnetoresistive element. And the half-width of the sensitivity distribution and the half-width of the surface-perpendicular conduction current density distribution in the magnetization sensing film.

[0010] The magnetoresistive element according to the present invention comprises:
A magnetoresistive element having a magnetization sensing film, and a magnetic domain stabilizing film of the magnetic sensing film disposed on both sides of the magnetoresistive element so as to be in contact with or facing the end face of the magnetization sensing film. In the magnetoresistive element in which the surface-perpendicular current is applied to the magnetoresistive element portion, the contact portion of one electrode of the counter electrode for conducting the surface-perpendicular current to the magnetoresistive element portion is a magnetic domain stabilizing film on both sides. , The width in the magnetic domain stabilizing direction (hereinafter referred to as the track width direction)
Select smaller than the interval of the magnetic domain stabilizing film.

Further, in the magnetoresistive effect type magnetic sensor according to the present invention, the configuration of the magnetoresistive element constituting the magnetoresistive effect sensor is the above-described magnetoresistive effect element configuration according to the present invention.

Further, in the magneto-resistance effect type magnetic head according to the present invention, the magnetic sensing portion has the above-described magneto-resistance effect element configuration according to the present invention.

The above-described magnetoresistive element according to the present invention,
Alternatively, in a magneto-resistance effect type magnetic sensor or a magneto-resistance effect type magnetic head having a magneto-resistance effect element, a current distribution flowing through the magneto-resistance effect element portion, and furthermore, a distribution of a magnetization sensing film of the magneto-resistance effect element portion. The steepness of the reproduction sensitivity distribution is achieved by skillfully utilizing both the magnetic permeability stabilization distribution due to the prevention or reduction of the rotation of magnetization in the portion adjacent to the magnetic domain stabilizing film.

[0014]

FIG. 1 is a sectional view showing an example of an embodiment of a magnetoresistance effect element (MR element) according to the present invention. In this example, the MR element portion 10 is formed on the first electrode 11 in a limited manner, and a magnetic domain stabilizing film 13 made of, for example, a hard magnetic film magnetized in a predetermined direction is abutted on both sides thereof. Then, M
An insulating layer 14 of Al ₂ O ₃ or the like is deposited on the R element portion 10 over the width WT. In this manner, the insulating layer 14 is provided with an opening 14w having a required width above the central portion on the MR element section 10, and through this opening 14w, the second electrode 12 is electrically connected on the MR element section 10. Is limitedly contacted. That is, the second electrode 12 is contacted with a width smaller than the interval between the magnetic domain stabilizing films 13.

The MR element section 10 can have a so-called bottom type GMR element structure, as shown in a schematic sectional view in FIG. 2A, for example. That is, in this case, the pinned layer 2, the non-magnetic spacer layer 3, and the free layer 4 are sequentially laminated on the antiferromagnetic layer 1. Although not shown, a conductive material such as Cu A protective layer of a layer is formed.

Alternatively, as shown in a schematic sectional view of FIG. 2B, for example, a so-called bottom-type GMR and a top-type GMR may be stacked on a dual-type GMR structure. That is, in this case, the first fixed layer 2a, the first nonmagnetic spacer layer 3a, and the free layer 4 are sequentially laminated on the first antiferromagnetic layer 1a, and the second nonmagnetic layer A configuration in which the spacer layer 3b, the second fixed layer 2b, and the second antiferromagnetic layer 1b are stacked can be employed.

In each of the configurations shown in FIGS. 2A and 2B,
For example, the fixed layers 2, 2a, and 2b each preferably have a so-called synthetic structure in which a ferromagnetic layer made of, for example, CoFe is stacked via a nonmagnetic thin film layer made of, for example, Ru.

The magnetic domain stabilizing film 13 is made of CoCr, CoP
A hard magnetic layer made of t, CoNiPt, CoCrPt, or the like, which is joined to both ends of the magnetization sensing film of the MR element section 10, that is, both end faces of the free layer 4, through an abutt junction or, for example, an insulating thin film. The magnetic domain stabilizing film is not limited to such a hard magnetic layer, but may be, for example, FeMn, IrMn, RhMn, NiMn, or PtM which is abutted so as to be exchange-coupled to the magnetization sensing film, that is, the free layer 4.
n, PdPtMn, a nickel oxide, a cobalt oxide part or the like. When the magnetic domain stabilizing film is formed of an antiferromagnetic layer as described above, the rise of magnetic sensitivity in the track width direction described later can be made steeper.

The MR element 10 has both electrodes 11 and 1
Between the two, the sense current Is is supplied. That is, a CPP configuration in which current is supplied in a direction perpendicular to the plane is used.

As described above, the MR element section 10 may have a GMR structure. However, as the nonmagnetic spacer layers 2, 2a and 2b, for example, a TMR structure is used as a tunnel barrier layer made of an Al ₂ O ₃ thin film. It can be.

In the above configuration, the direction of the magnetization of the magnetic domain stabilizing film, that is, the magnetization in the state where no detection magnetic field of the free layer is applied (no magnetic field state), crosses the direction of the detection magnetic field introduced into the MR element. Is selected, and the direction of magnetization of the fixed layer is selected in a direction crossing the direction.

A magnetoresistive magnetic sensor (MR sensor) or a magnetoresistive magnetic head (MR magnetic head) according to the present invention is shown, for example, in FIG. The first and second magnetic fields 21 and 22 are arranged on the outer surfaces of the first and second electrodes 11 and 12 of the MR element portion 10 or, although not shown, the first and second electrodes 11 and 12 And 12
The first and second magnetic shield / electrodes which also serve as the first and second magnetic shields are arranged.

FIG. 4A is a schematic sectional view of the MR element section 10 according to the present invention, and portions corresponding to those in FIG. As described above, the MR element section 10 in which the magnetization stabilizing films 13 are arranged on both sides is magnetized by these magnetization stabilizing films 13 in a predetermined direction, that is, in a direction crossing the application direction of the external magnetic field (detection magnetic field). The magnetic domain is formed so that the rotation of the magnetization by the external magnetic field is stably performed, and the generation of Barkhausen noise is improved.

However, on the other hand, the MR element 10
Although the sensitivity is high in the central part, which is sufficiently separated from the magnetization stabilizing film 13, the sensitivity is high.
As a result, the magnetization stabilizing film 13 strongly influences the rotation of the magnetization, thereby hindering the sensitivity and lowering the sensitivity. Further, the magnetization is fixed at both ends at the junction with the magnetization stabilizing film 13, It becomes an insensitive area. That is, as shown in FIG. 4B, the distribution shows that the substantial transmittance is highest in the center and decreases on both sides.

On the other hand, a sense current Is is supplied to the MR element section 10 between the electrodes 11 and 12. As shown in FIG. 4C, the current density distribution is
The current density shows a high value immediately below the contact portion of the electrode 12 in the opening 14w of the fourth, that is, the width corresponding to the width of the opening 14w, and the current spills below the insulating layer 14 toward both outer sides. However, the current density is low. In both GMR and TMR, since the resistance changes in accordance with the magnetization state of the magnetic layer through which electrons pass, the detected voltage is higher as the current density is higher, and the detection dependency in the track width direction is also higher. The higher the current, the greater.

In this configuration, the contact width, that is, the width of the opening 14W, the insulating layer, and the half width W50B of the transmittance sensitivity distribution shown in FIG. 4B substantially match the half width W50C of the current density distribution shown in FIG. 4C. The selection of the protrusion width WT, sense current, and the like on the fourteen MR element portions 10 is performed.

If these two track width sensitivities shown in FIGS. 4B and 4C are performed for one MR element section 10, the sensitivity in the track width direction becomes the product of the spatial functions of the respective sensitivities. As shown by, the rise of the track width sensitivity becomes steeper than the sensitivity characteristics in FIGS. 4B and 4C indicated by the broken line curve in FIG. 4D.

Next, an embodiment of the magnetoresistance effect element according to the present invention will be described. In this case, a CPP type GMR reproducing head was manufactured. A reproducing head (sample 1) in which the distance between the magnetic domain stabilizing films disposed so as to sandwich the MR element section 10 is selected to be the same and the protrusion amount WT of the insulating layer 4 described in FIG. A reproducing head with WT = 100 nm (sample 2) was produced. Then, the reproduction output of these heads (samples 1 and 2) and the rise of the track width of the micro-track profile were examined.

The MR element section 10 in the samples 1 and 2
Has a dual GMR configuration described with reference to FIG. 2B. In this case, the first and second antiferromagnetic layers 1a and 1b were made of PtMn, and the fixed layer was made of a synthetic structure. The free layer 4 has Ms (saturated magnetization) × t (thickness)
= 800 emu / cm ³ × 11.5 nm. Incidentally, this value is larger than the usual value in the related art, in order to more clearly understand the effect of the configuration of the present invention.

Then, a magnetic shield / electrode made of NiFe was arranged above and below. With these magnetic shields and electrodes,
A Cu film was interposed on the bonding surface with the MR element unit 10. The gap between the magnetic shield and electrode was 120 nm. The magnetic domain stabilizing film 13 is made of CoCrPt (Ms (500
emu / cm ³ ) × t) and the normalized permanent magnet coefficient (500
[Emu / cm ³ ] × t [nm] / 800 [emu / cm ³ ] × 1
1.5 [nm] was set to 8.3. The insulating layer 14 is made of A
l ₂ O ₃ was used.

In the measurement of Samples 1 and 2, the sense current was examined under the condition of 15 mA. As a result, Sample 2 (WT = 100 nm) was replaced by Sample 1 (WT = 0).
nm), the output was improved by about 33%. This effect is considered to be due to the reduction of the shunt loss due to the sharpening of the sensitivity.

FIG. 5 shows a micro-track profile in which the reproduction output is specified in the direction of the vertical axis and the distance between the magnetic domain stabilizing films in the direction of the horizontal axis. In FIG. 5, the solid curve shows the measurement result for Sample 1, and the broken curve shows the measurement result for Sample 2. As is clear from the comparison between the two, the rising of the sensitivity in the track width direction of the sample 2 is improved as compared with the sample 1.

Note that the sensitivity when the protrusion width WT = 0 is set,
Assuming that WT is considerably large, the half widths W50B and W
The sensitivity when 50C is W50B≫W50C and the sensitivity when WT is extremely small and W50B≪W50C are shown in comparison with FIGS. In each case,
As compared with the case where W50B ≒ W50C in the present invention, the reproduction sensitivity distribution cannot be sharpened.

FIGS. 6 to 9 are schematic sectional views showing examples of a magnetoresistive magnetic sensor or a magnetoresistive magnetic head using a magnetoresistive element according to the present invention as a magnetic sensing portion. Needless to say, the present invention is not limited to these.

In the example shown in FIG. 6, an insulating layer 14 having an opening for defining a contact portion is formed on one electrode 11 of the counter electrode, and the magnetic domain is stabilized with an interval larger than the opening width of the insulating layer 14. In this case, the constituent film of the MR element unit 10 and the other electrode 12 are formed so that the oxide film 13 is arranged and formed over the magnetic domain stabilizing film 13 from within the opening 14w.

Further, in the example shown in FIG.
One of the opposing electrodes 11 is arranged in the opening 14w of the fourth magnetic field stabilization film 4 and the magnetic domain stabilizing films 13 are formed with an interval larger than the opening width. This is a case where the constituent film of the part 10 and the other electrode 12 are formed.

In the example shown in FIG. 8, one of the electrodes 11 is arranged in the opening 14 of the insulating layer 14, and extends over the insulating layer 14 from the opening 14w to be thinner outside the portion facing the opening 14w. The constituent film of the MR element portion 10 is formed, and a magnetic domain stabilizing film 13 is formed on the thin portion. The MR element portion 10 between the magnetic domain stabilizing films 13 extends over the magnetic domain stabilizing film 13 and This is a case where the electrode 12 is formed to have a flattened configuration.

In the example shown in FIG. 9, one electrode 11
Is formed in a limited manner, the magnetic domain stabilizing films 13 are arranged opposite to each other with the electrode 11 interposed therebetween, and the constituent films of the MR element portion 10 are formed over the electrodes 11 and the magnetic domain stabilizing films 13. An insulating layer 14 having an opening 14w is formed on the MR element portion 10 so as to face the electrode 11 below the blocking portion 10, and extends in the opening 14w of the insulating layer 14 and over the insulating layer 14. In this case, the other electrode 12 is formed.

In the case of the structure shown in FIG. 1 or FIG. 3, as a manufacturing method, the magnetization stabilizing film 13 and the opening 14w of the insulating layer 14 can be self-aligned. An example of this case will be described with reference to FIG. 10. As shown in FIG.
Is prepared, that is, a laminated film 100 that constitutes the above.

As shown in FIG. 10B, first and second photoresists 31 and 32 are formed on the laminated film 100. The first photoresist 31 is formed at a position and a pattern where the opening 14w is to be finally formed, and a second photoresist 32 is finally formed thereon on the magnetic domain stabilizing film 1.
It is formed at a position corresponding to the upper part between the three spaces. The photoresists 31 and 32 can be accurately formed with a predetermined positional relationship with each other by photolithography.

Thereafter, using the second photoresist 32 as a mask, the laminated film 1 outside the photoresist 32 is anisotropically etched, for example, by ion beam etching.
00 is etched to a required thickness to form the MR element portion 10, and grooves 100M are formed on both sides thereof.

As shown in FIG. 10C, a magnetic domain stabilizing film 13 is formed on the entire surface so as to fill the groove 100M by sputtering or the like, and thereafter, the insulating layer 14 is sputtered in an oblique direction to form the second photo-resist. It is formed so as to enter the inside of the resist 32.

Thereafter, as shown in FIG. 10D, the first and second photoresists 31 and 32 are removed, an opening 14w is formed, and the other electrode 12 is entirely formed by sputtering or the like.

As described above, the magnetoresistive effect element in which the opening 14w and the magnetic domain stabilizing film 13 are formed in a predetermined positional relationship by self-alignment, and the magnetoresistive effect type magnetic element using the magnetoresistive element or the sensor section as the magnetoresistive element. A head or a magnetic sensor can be configured.

As described above, according to the present invention, a magnetoresistive element, a magnetoresistive magnetic sensor, and a magnetoresistive magnetic head having a steep sensitivity can be formed. Can be played with high resolution

According to the structure of the present invention, the MR element 1
An electrode is formed by forming an opening in an insulating layer only on the upper electrode 0, and a path for a sense electrode is formed in the MR element section 10 in a limited manner. Since this working part is formed in a part of the element part 10 in a limited manner, for example, by arranging this working part behind a front surface which is a facing or sliding surface with a recording medium in a magnetic head, so to speak, The arrangement of the magnetic flux guide can be adopted, and the influence of sliding heat, abrasion and the like on the working part can be avoided.

Further, since the magnetic head according to the present invention is a reproducing magnetic head, a recording / reproducing magnetic head is formed by mounting a well-known, for example, a thin film type electromagnetic induction type recording head on the reproducing magnetic head. be able to.

The magnetoresistive element, magnetoresistive magnetic sensor, and magnetoresistive magnetic head according to the present invention include:
The present invention is not limited to the above-described example, and various modifications can be made in the configuration of the present invention in accordance with the purpose of use and mode. It can also be configured.

[0049]

As described above, the magnetoresistive effect element according to the present invention is capable of detecting the magnetic field with high accuracy because the sensitivity is substantially sharpened in the track width direction. An effect type magnetic sensor can be formed, and a magnetoresistive effect type magnetic head for a high recording density magnetic recording medium can be formed.

In addition, in consideration of the influence of the substantial magnetic permeability sensitivity distribution due to the magnetic domain stabilizing film, the structure has a half width of this sensitivity distribution and a half width of the surface perpendicular conduction current density distribution in the magnetization sensing film. Since it is only the selection of the characteristic that they almost match, it is possible to avoid a complicated structure such as adding a special means.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an example of a magnetoresistance effect element according to the present invention.

FIGS. 2A and 2B are schematic cross-sectional views each illustrating an example of a magnetoresistive element unit.

FIG. 3 is a schematic sectional view of an example of a magnetoresistive magnetic sensor or a magnetoresistive magnetic head according to the present invention.

FIG. 4 is a diagram for explaining the characteristics of the magnetoresistive element according to the present invention, wherein A is a schematic sectional view of the magnetoresistive element, and B is
Is a sensitivity distribution diagram of the magnetic permeability, C is a current density distribution diagram,
D is a reproduction sensitivity distribution diagram.

FIG. 5 is a reproduction output distribution diagram of an embodiment of a magnetic head using a magnetoresistive element according to the present invention.

FIG. 6 is a schematic sectional view of an example of a magnetoresistive magnetic sensor or a magnetoresistive magnetic head according to the present invention.

FIG. 7 is a schematic sectional view of another example of a magnetoresistive magnetic sensor or a magnetoresistive magnetic head according to the present invention.

FIG. 8 is a schematic sectional view of another example of a magnetoresistive magnetic sensor or a magnetoresistive magnetic head according to the present invention.

FIG. 9 is a schematic sectional view of another example of a magnetoresistive magnetic sensor or a magnetoresistive magnetic head according to the present invention.

10A to 10D are manufacturing process diagrams of the magnetoresistance effect element according to the present invention.

FIG. 11 is an explanatory diagram of general characteristics of a magnetoresistance effect element. A is a schematic cross-sectional view of the magnetoresistive element, B is a sensitivity distribution diagram of the magnetic permeability, C is a current density distribution diagram, and D is a reproduction sensitivity distribution diagram.

FIG. 12 is an explanatory diagram of general characteristics of a magnetoresistive element. A is a schematic cross-sectional view of the magnetoresistive element, B is a sensitivity distribution diagram of the magnetic permeability, C is a current density distribution diagram, and D is a reproduction sensitivity distribution diagram.

FIG. 13 is a general explanatory diagram of characteristics of a magnetoresistive element. A is a schematic cross-sectional view of the magnetoresistive element, B is a sensitivity distribution diagram of the magnetic permeability, C is a current density distribution diagram, and D is a reproduction sensitivity distribution diagram.

[Explanation of symbols]

1 ... Antiferromagnetic layer, 1a ... First antiferromagnetic layer, 1
b ... second antiferromagnetic layer, 2 ... fixed layer, 2a ...
A first fixed layer, 2b a second fixed layer, 3 a non-magnetic spacer layer, 3a a first non-magnetic spacer layer,
3b: second nonmagnetic spacer layer, 4: free layer,
10 ... Magnetoresistance effect element part (MR element part), 11
..First electrode, 12 ... second electrode, 13 ... magnetic stabilizing film, 14 ... insulating layer, 21 ... first magnetic shield, 22 ... second magnetism Shield, 100 ...
・ Laminated film, 100M ・ ・ ・ Groove

Claims (21)

[Claims] 1. A magnetoresistive element having a magnetization sensing film, and a magnetoresistive element arranged on both sides of the magnetoresistive element so as to contact or face an end face of the magnetization sensing film. A magnetic domain stabilizing film, wherein the magnetoresistive effect element portion has a magnetoresistive effect element in which a surface-perpendicular current is applied to the magnetoresistive effect element portion, wherein the half width of the sensitivity distribution of the magnetic permeability of the magnetization sensing film in the magnetic domain stabilizing direction. And a half-width of the distribution of the current density perpendicular to the surface of the magnetization sensing film. 2. A method according to claim 1, wherein a contact portion of one electrode of the counter electrode for conducting the surface-perpendicular current to the magnetoresistive element portion is related to an interval direction of the magnetic domain stabilizing films disposed on both sides of the magnetoresistive element portion. 2. The magnetoresistive element according to claim 1, wherein the width is smaller than the interval between the magnetic domain stabilizing films. 3. The magnetoresistive effect element portion is formed on one of the opposed electrodes with a limited required width, and the magnetic domain stabilizing films are formed on both sides of the magnetoresistive effect element portion. An insulating layer having an opening defining the contact portion is formed over the magnetic domain stabilizing film and over the magnetoresistive effect element portion, and is formed over the inside of the opening and over the insulating layer. 3. The magnetoresistive element according to claim 2, wherein the other electrode of said counter electrode is formed by adhesion. 4. An insulating layer having an opening that defines the contact portion is formed on one of the counter electrodes, and the magnetic domain stabilizing film is formed at intervals larger than the opening width of the insulating layer. 3. The magnetoresistive effect according to claim 2, wherein the magnetoresistive effect element portion and the other electrode of the counter electrode are formed so as to extend over the magnetic domain stabilizing film from within the opening. element. 5. An electrode of the counter electrode is arranged in the opening of the insulating layer, the magnetic domain stabilizing films are formed at intervals larger than the opening width, and the magnetic domain stabilizing films are formed between the magnetic domain stabilizing films. The magnetoresistance effect element according to claim 2, wherein the magnetoresistance effect element portion and the other electrode of the counter electrode are formed over the stabilization film. 6. A magnetoresistive element, wherein one of the counter electrodes is arranged in the opening of the insulating layer, and is thinned outside the portion facing the opening from the opening over the insulating layer. An effect element is formed, the magnetic domain stabilizing film is formed on the thin portion, and the other of the counter electrodes extends from the magnetoresistive effect element between the magnetic domain stabilizing films onto the magnetic domain stabilizing film. The magnetoresistive element according to claim 2, wherein an electrode is formed. 7. One of the opposed electrodes is formed in a limited manner, and the magnetic domain stabilizing films are arranged opposite to each other with the electrode interposed therebetween, and are placed on the electrodes and the magnetic domain stabilizing films. A magnetoresistive effect element is formed, and an insulating layer having the opening is formed on the magnetoresistive effect element so as to face the electrode below the magnetoresistive effect element. 3. The magnetoresistive element according to claim 2, wherein the other electrode is formed over the insulating layer. 8. A magnetoresistive element having a magnetization sensing film, and said magnetoresistive element disposed on both sides of said magnetoresistive element so as to be in contact with or face an end face of said magnetization sensing film. A magnetic domain stabilizing film, wherein the magnetoresistive effect element is provided with a magnetoresistive effect element in which a surface-perpendicular current is applied, wherein the magnetic domain stabilization of the magnetization sensing film is performed. A half-width of a sensitivity distribution of magnetic permeability in a direction substantially equal to a half-width of a current distribution perpendicular to the surface of the magnetization sensing film. 9. A contact portion of one electrode of an opposing electrode for conducting said surface-perpendicular current to said magnetoresistive element portion is related to an interval direction of said magnetic domain stabilizing films arranged on both sides of said magnetoresistive element portion. 9. The magnetoresistive effect type magnetic sensor according to claim 8, wherein the width is smaller than the interval between the magnetic domain stabilizing films. 10. The magnetoresistive element portion is formed on one electrode of the counter electrode with a limited required width, and the magnetic domain stabilizing films are formed on both sides of the magnetoresistive effect element portion. An insulating layer having an opening defining the contact portion is formed over the magnetic domain stabilizing film and over the magnetoresistive effect element portion, and is formed over the inside of the opening and over the insulating layer. 10. The magnetoresistive effect type magnetic sensor according to claim 9, wherein the other electrode of the counter electrode is formed by being adhered. 11. An insulating layer having an opening that defines the contact portion is formed on one of the opposed electrodes, and the magnetic domain stabilizing film is formed with an interval larger than the opening width of the insulating layer. 10. The magnetoresistance effect according to claim 9, wherein the magnetoresistance effect element portion and the other electrode of the counter electrode are formed so as to extend from inside the opening onto the magnetic domain stabilizing film. Type magnetic sensor. 12. An electrode of the counter electrode is arranged in the opening of the insulating layer, the magnetic domain stabilizing films are formed at intervals larger than the opening width, and the magnetic domain stabilizing films are formed between the magnetic domain stabilizing films. The magnetoresistance effect type magnetic sensor according to claim 9, wherein the magnetoresistance effect element portion and the other electrode of the counter electrode are formed over the stabilization film. 13. A magnetoresistive device, wherein one of the counter electrodes is disposed in the opening of the insulating layer, and is thinned outside the portion facing the opening from the opening over the insulating layer. An effect element is formed, the magnetic domain stabilizing film is formed on the thin portion, and the other of the counter electrodes extends from the magnetoresistive effect element between the magnetic domain stabilizing films onto the magnetic domain stabilizing film. The magnetoresistance effect type magnetic sensor according to claim 9, wherein electrodes are formed. 14. One of the counter electrodes is formed in a limited manner, and the magnetic domain stabilizing films are arranged opposite to each other with the electrode interposed therebetween. A magnetoresistive effect element is formed, and an insulating layer having the opening is formed on the magnetoresistive effect element so as to face the electrode below the magnetoresistive effect element. 10. The magnetoresistive effect type magnetic sensor according to claim 9, wherein the other electrode is formed over the insulating layer. 15. A magnetoresistive element having a magnetization sensing film, and a magnetoresistive element disposed on both sides of the magnetoresistive element so as to contact or face an end face of the magnetization sensing film. A magnetic domain stabilizing film, wherein the magnetoresistive effect element portion includes a magnetoresistive effect element having a magnetoresistive effect element in which a surface-perpendicular current is applied as a magnetosensitive portion, wherein the magnetic domain of the magnetization sensing film is A magnetoresistance effect type magnetic head characterized in that the half width of the sensitivity distribution of the magnetic permeability in the stabilizing direction and the half width of the current distribution perpendicular to the surface of the magnetization sensing film substantially coincide with each other. 16. A contact part of one electrode of a counter electrode that conducts the plane-perpendicular current to the magnetoresistive element unit is related to a spacing direction of the magnetic domain stabilizing films disposed on both sides of the magnetoresistive element unit. 16. The magnetoresistive head according to claim 15, wherein the width is smaller than the interval between the magnetic domain stabilizing films. 17. The magnetoresistive element portion is formed on one electrode of the counter electrode with a limited required width, and the magnetic domain stabilizing films are formed on both sides of the magnetoresistive effect element portion. An insulating layer having an opening defining the contact portion is formed over the magnetic domain stabilizing film and over the magnetoresistive effect element portion, and is formed over the inside of the opening and over the insulating layer. 17. The magnetoresistive head according to claim 16, wherein the other electrode of the counter electrode is formed by being adhered. 18. An insulating layer having an opening that defines the contact portion is formed on one of the counter electrodes, and the magnetic domain stabilizing film is formed at intervals larger than the opening width of the insulating layer. 17. The magnetoresistance effect according to claim 16, wherein the magnetoresistance effect element portion and the other electrode of the counter electrode are formed so as to extend over the magnetic domain stabilizing film from within the opening. Type magnetic head. 19. One of the counter electrodes is disposed in the opening of the insulating layer, the magnetic domain stabilizing films are formed at intervals larger than the width of the opening, and the magnetic domain stabilizing films are formed between the magnetic domain stabilizing films. 17. The magneto-resistance effect type magnetic head according to claim 16, wherein the magneto-resistance effect element portion and the other electrode of the counter electrode are formed over the stabilizing film. 20. A magnetoresistive element having one electrode of the counter electrode disposed in the opening of the insulating layer and extending from the opening onto the insulating layer and being thinner outside a portion facing the opening. An effect element is formed, the magnetic domain stabilizing film is formed on the thin portion, and the other of the counter electrodes extends from the magnetoresistive effect element between the magnetic domain stabilizing films onto the magnetic domain stabilizing film. 17. The magnetoresistive head according to claim 16, wherein an electrode is formed. 21. One of the opposed electrodes is formed in a limited manner, and the magnetic domain stabilizing films are arranged to face each other with the electrode interposed therebetween. A magnetoresistive effect element is formed, and an insulating layer having the opening is formed on the magnetoresistive effect element so as to face the electrode below the magnetoresistive effect element. 17. The magnetoresistive head according to claim 16, wherein the other electrode is formed over the insulating layer.