JP2001358077A - Thin film production equipment - Google Patents

Abstract

(57) [Problem] To provide a thin film manufacturing apparatus capable of suppressing radiant heat from a catalyst body and setting a wide range of film forming conditions without lowering a film forming speed. SOLUTION: The thin film production apparatus is an apparatus for chemically depositing a thin film on a substrate by using a catalytic reaction between a raw material gas for a thin film and a catalytic body, wherein the catalytic body has a coil shape or a plate shape. In addition, irregularities are formed on the surface in contact with the source gas.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for producing a thin film, and more particularly to a structure of a catalyst-chemical vapor deposition (hereinafter referred to as "catalytic CVD" in this specification) apparatus.

[0002]

2. Description of the Related Art In the manufacture of various semiconductor devices such as LSIs, LCDs (liquid crystal displays), solar cells, and the like, a process of depositing a predetermined semiconductor thin film on a substrate is required. In such a process, a plasma CVD method, a chemical vapor deposition method (CVD method),
Film formation by a thermal CVD method or a catalytic CVD method is used. Among these CVD methods, the plasma CVD method using plasma energy for a chemical reaction has become the mainstream of the CVD method because a film can be formed at a relatively low temperature.

However, the plasma CVD method has a problem in that charged particles in the plasma are irradiated to the film during film formation, causing damage. In other words, when ions or electrons in the plasma are mixed into the surface layer of the film to affect the electrical characteristics, or when the damage is large, a phenomenon that a local shape defect such as a pinhole occurs on the surface of the film is also observed. . On the other hand, the catalytic CVD method capable of forming a film at a low temperature has attracted attention as a method for obtaining a high-quality thin film because there is no such plasma damage as described above.

[0004] Conventional catalytic CVD methods include, for example,
Approximately 1600 to 1900 ° C using tungsten wire as a medium
And silane (SiH_Four) And hydrogen
(H _Two) To contact the catalyst body,
Silicon film on substrate by chemically decomposing run and hydrogen
There is known a method of depositing
-40314). The substrate temperature at this time is about 40
It is kept at 0 ° C or less, and film formation at a relatively low temperature becomes possible.
I have.

[0005] In addition, a public symposium "Cat-C" of Hokuriku Advanced Institute of Science and Technology held in October 1999.
In the semiconductor device manufacturing process by the VD method (catalytic CVD method), as a method for forming a film at a lower substrate temperature, a plate-shaped (flat) catalyst body is arranged perpendicularly to the substrate to reduce the catalyst area with respect to the substrate. A method of reducing radiant heat from the catalyst body to the substrate by performing the method has been reported. In this method, the substrate temperature can be lowered by about 100 ° C. as compared with the case where a linear catalyst is used.

There is also known a method of reducing radiant heat by using a radiant heat blocking member through which a raw material gas can pass between the catalyst and the substrate (for example, Japanese Patent No. 269).
No. 2326). In this method, a blocking member made of a material that can withstand high temperatures, such as stainless steel or ceramics, is disposed in parallel between the catalyst body and the substrate. Thereby, when the catalyst temperature is about 1100 to 1500 ° C, the substrate temperature becomes about 100 to 200 ° C, and the substrate temperature is lowered by about 200 ° C as compared with the substrate temperature of about 300 to 400 ° C when the blocking member is not installed. be able to.

A method of reducing radiant heat by forming a film while covering the entire catalyst with a metal container is also known (for example, see Japanese Patent Application Laid-Open No. H11-54441). In this method, a catalyst container made of stainless steel containing a catalyst body is provided in a film forming vessel to isolate the catalyst body from the substrate, and a raw material gas decomposed by the catalyst is ejected from a hole provided in a lower portion of the catalyst container. Let it. As a result, the catalyst temperature is reduced to about 17
When the temperature of the substrate is set to about 350 ° C. and the temperature of the substrate holder is set to about 350 ° C., the substrate temperature is suppressed to about 380 to 390 ° C. That is, when the heating from the substrate holder is subtracted, the temperature at which the substrate is heated by the radiant heat from the catalyst can be considered to be suppressed to a net value of about 100 ° C. or less.

AHMahan, National Renewable Ene
rgy Laboratory, Golden, CO 80401 (Extended Abstract o
f the International Pre-Workshop on Cat-CVD (Hot-Wi
reCVD) Process, 29 September 1999, HighSubstrate Temperature a-Si: H Materials a in Ishikawa, Japan
nd Devices Deposited at HighDeposition Rates Using
The Catalytic CVD Technique) reported that a problem common to the catalytic CVD method was the deterioration of the catalyst body due to the formation of the catalyst and the raw material gas compound in the low temperature region of the catalyst itself. . For example, when a tungsten wire is used as a catalyst and silane is used as a source gas, a case is known in which silicide is generated on a catalyst near an electrode where the temperature is relatively low, and the catalyst wire is disconnected.

[0009]

As described in the report of Hokuriku Advanced Institute of Science and Technology described above, when the catalyst is plate-shaped, substrate heating due to radiant heat from the catalyst can be suppressed, but the film forming speed is about 6 to 15 ° / s, which is significantly lower than the film forming speed of about 12 to 18 ° / s by the ordinary catalytic CVD method.

In addition, even when the substrate is prevented from being heated by radiant heat by using the blocking member, the film forming speed is reduced to about 6 ° / s. Further, the same applies to a case where the catalyst body is accommodated in a catalyst container provided with a raw material gas ejection hole.

Further, the silicide generated in the temperature-lowering portion of the catalyst body not only causes the deterioration of the catalyst body as described above, but also causes a drastic reduction in the film-forming speed and the contamination of the formed thin film with impurities. It can also cause problems such as contamination.

Summarizing the above, it can be said that the catalyst heating temperature and the substrate temperature are important parameters for producing a high quality thin film without lowering the film forming speed in the film formation using the catalytic CVD apparatus. . However, since the substrate receives radiant heat from the high-temperature catalyst and heat transport by the raw material gas, it becomes difficult to suppress the substrate temperature as the catalyst heating temperature increases. That is, in the conventional catalytic CVD apparatus, since the catalyst heating temperature and the substrate temperature cannot be independently controlled, film formation conditions cannot be sufficiently selected and controlled, and it is difficult to form a high quality film. As described above, attempts have been made to reduce the radiant heat from the catalyst body. However, in the methods performed so far, the radiant heat is reduced and the film forming speed is also reduced.

The present invention has been made in view of the above circumstances, and the unevenness is formed on the surface of the catalyst body so that the reaction efficiency of the catalyst body with the raw material gas is improved. By lowering the heating temperature or reducing the size of the catalyst body, without lowering the film forming speed,
An object of the present invention is to provide a thin film production apparatus that enables suppression of radiant heat from a catalyst body and setting of a wide range of film forming conditions.

[0014]

SUMMARY OF THE INVENTION The present invention relates to an apparatus for chemically depositing a thin film on a substrate by using a catalytic reaction between a raw material gas for a thin film and a catalyst, wherein the catalyst is formed in a coil or plate. An object of the present invention is to provide a thin film forming apparatus characterized in that irregularities are formed on a surface that contacts a source gas.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In other words, the thin film production apparatus of the present invention has a catalyst body in the form of a coil or a plate, and has irregularities on its surface to increase the surface area, thereby reducing the contact probability between the raw material gas and the catalyst body. It improves the decomposition efficiency of the source gas. Since the improvement of the decomposition efficiency of the raw material gas also leads to the improvement of the film formation speed, the area occupied by the catalyst body on the substrate should be reduced or the heating temperature of the catalyst body should be set lower by the amount corresponding to the improvement of the raw material gas decomposition efficiency Will be able to

As a result, the substrate can be prevented from being heated by suppressing radiant heat from the catalyst to the substrate. Further, unlike the related art, since the blocking member and the catalyst container are not used, the film forming speed is not reduced, and the film forming speed can be improved by improving the decomposition efficiency of the raw material gas. Due to these effects, the degree of freedom in setting film forming conditions at the time of film forming is also increased. In addition, as a method of forming irregularities on the surface of the catalyst body, a method such as sandblasting or plasma etching can be used.

In the thin film production apparatus according to the present invention, the surface area of the catalyst body is preferably about 1.2 to 20 times the surface area of the flat surface. If the surface area of the catalyst body is smaller than about 1.2 times the surface area of the flat surface, the contact probability between the raw material gas and the catalyst body cannot be expected to be much improved, and if it is larger than about 20 times. This is because the irregularities are so fine that the contact between the raw material gas and the surface of the catalyst becomes difficult. That is, when the surface area of the catalyst body is increased within a range of about 1.2 to 20 times the surface area of the flat surface, the decomposition efficiency of the source gas can be improved.

Further, the thin film production apparatus according to the present invention further comprises a chamber for accommodating a substrate and a catalyst body and supplying a raw material gas, wherein the chamber has an inner wall which is heated by the radiant heat from the catalyst body when the catalyst body is heated. May be configured to be absorbed. In other words, the radiant heat generated from the catalyst is applied not only to the substrate but also to all directions in the chamber. Radiant heat generated in directions other than the substrate direction is reflected by the inner wall of the chamber, and slightly warms the substrate. Therefore, if the radiant heat reflected by the inner wall of the chamber can be reduced, the influence of the radiant heat on the substrate is suppressed.

Examples of the configuration of such a chamber include a configuration in which a black wall material, for example, a radiation absorbing material made of carbon or the like is disposed on the inner wall of the chamber to absorb radiant heat generated from the catalyst body to the surroundings. Can be. More preferably, a cooling pipe is arranged in the chamber so that the heat absorbed by the radiation absorbing material is not released into the chamber again, and the cooling pipe absorbs the heat of the radiation absorbing material and discharges the heat to the outside of the chamber. It is good to

Further, the thin film production apparatus of the present invention may include a shielding member for shielding a portion of the catalyst body which does not rise to a predetermined temperature when heated from the raw material gas. This is to improve the contamination of the formed thin film and the life of the catalyst. In other words, when the temperature of the catalyst is sufficiently high, the raw material gas is decomposed and deposited on the substrate, but when the temperature of the catalyst is low, the raw material gas is not completely decomposed and is combined with the catalytic element. There are also things.

For example, when tungsten is used as a catalyst and silane is used as a raw material gas, silicide is generated in a portion where the temperature of the catalyst decreases, and a reduction in the film forming speed and
This causes impurities to be mixed into the thin film and deterioration of the catalyst. Originally, the temperature drop portion occurs in the catalyst body which becomes high in temperature because the heat of the catalyst body escapes to the terminal for supplying power to the catalyst body, and the temperature of the catalyst body near the terminal decreases. .

Therefore, by providing a shielding member for shielding the raw material gas from the raw material gas at the temperature lowering portion of the catalytic body, it is possible to prevent the combination of the catalytic element and the raw material gas, and to prevent impurities from being mixed into the thin film and deterioration of the catalytic body. Become like

In the thin film manufacturing apparatus of the present invention, the shielding member may be a coating film made of a material that is thermally and chemically inert to the catalyst. Specific examples of the material of the coating film include carbon and tungsten carbide.When the catalyst is formed of tungsten, molybdenum, tantalum, titanium, vanadium, or the like, these elements are thermally and chemically mixed. Other metals and ceramics may be used as long as they are inert in nature, or a material that does not affect the thin film or the life of the catalyst body even if reacted.

For example, when the temperature-lowering part of the catalyst is coated with a coating film made of carbon or tungsten carbide and silane is used as a raw material gas, silicon carbide is generated on the surface of the coating film depending on the surface temperature of the coating film. But does not affect the catalytic elements.

In the thin film production apparatus of the present invention, the shielding member may be a gas that is thermally and chemically inert to the catalyst. When the inert gas is used as the shielding member in this manner, for example, a raw material gas is formed by covering a temperature-reducing portion of the catalyst body with a cylindrical material and flowing the inert gas between the cylindrical material and the catalyst body. The shield can be shielded from contacting the temperature-lowering portion of the catalyst body. Alternatively, a method may be used in which a nozzle is provided in the vicinity of the temperature-lowering portion of the catalyst body and an inert gas is blown from the nozzle.

In any case, since the contact between the temperature-lowering portion of the catalyst and the raw material gas is prevented by the constantly flowing inert gas, impurities are mixed into the thin film due to the combination of the catalyst element and the raw material gas, and Deterioration can be prevented. Note that specific examples of the inert gas include H ₂ , Ar, and a mixed gas thereof.

As described above, the thin film forming apparatus of the present invention improves the decomposition efficiency of the raw material gas by forming irregularities on the surface of the catalyst body, thereby allowing the catalyst body to move from the catalyst body to the substrate without lowering the film formation speed. To reduce the radiant heat of the film and to form a film at a lower temperature. Therefore, it is possible to select and control various film forming conditions. In addition, a high-quality thin film is prevented by preventing the catalyst body from deteriorating due to the formation of a compound of the catalyst body and the raw material gas in the temperature-lowering part of the catalyst body, and preventing foreign substances from being mixed into the formed thin film. Can be formed.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the embodiments shown in the drawings. The present invention is not limited by the embodiment.

Embodiment 1 A thin film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 1, a thin film manufacturing apparatus 1 chemically deposits a thin film (not shown) on a substrate 3 by using a catalytic reaction between a raw material gas for a thin film (not shown) and a catalyst 2. In the apparatus, unevenness 2a (see FIG. 2) is formed on the surface of a catalyst body 2 that comes into contact with a raw material gas.

More specifically, as shown in FIG. 1, the thin film manufacturing apparatus 1 mainly includes a film forming chamber 4, a raw material gas supply pipe 5, a catalyst 2, and a substrate holder 6 on which the substrate 3 is mounted. And a gas blowing hole 5 at the end of the raw material gas supply pipe 5.
a is formed.

As shown in FIG. 1, the film forming chamber 4 is an airtight container provided with an exhaust system 7 and a view port 8. The exhaust system 7 is a multi-stage exhaust system including a diffusion pump (not shown) and the like.
It is configured to be able to exhaust up to about ^-5 Pa. The film forming chamber 4 is provided with a gate valve (not shown) for taking the substrate 3 in and out. Further, a substrate transfer chamber (not shown), a load lock chamber (not shown), and the like are further provided adjacent to the film forming chamber 4.

The raw material gas supply pipe 5 is configured to be able to supply a plurality of types of raw material gases selectively or simultaneously. The thin film manufacturing apparatus 1 is configured to supply monosilane and hydrogen. Each gas supply system (not shown) is provided with a valve (not shown) and a flow controller (not shown) so that the gas can be supplied at a predetermined flow rate.

As shown in FIG. 1, the catalyst body 2 is disposed substantially at the center of the film forming chamber 4 and has a holder (not shown).
And is held in the film forming chamber 4 via the. Catalyst 2
Is a coil formed from a tungsten wire having a thickness of about 0.5 mm and a length of about 130 cm and having an inner diameter of about 3 mm.
As shown in FIG. 2, the surface of the catalyst body 2 is provided with the unevenness 2a, so that the surface area of the catalyst body 2 is the same as that of the catalyst body 62 shown in FIG. Is about twice as large.

As a result, the probability of contact between the surface of the catalyst body 2 and the raw material gas is increased, and the decomposition efficiency of the raw material gas is improved. The improvement in the decomposition efficiency of the source gas also leads to an increase in the growth rate of the thin film deposited on the substrate 3. By these effects, the occupation area (length) of the catalyst body 2 with respect to the substrate 3 is reduced without lowering the film forming speed, thereby suppressing the radiant heat caused by the catalyst body 2 and preventing the substrate 3 from being heated by the radiant heat. I have.

If the area occupied by the catalyst body 2 with respect to the substrate 3 is not reduced, the radiant heat caused by the catalyst body 2 can be suppressed without lowering the film forming speed by lowering the heating temperature of the catalyst body 2. Can also. Note that reducing the area occupied by the catalyst body 2 with respect to the substrate 3 is described in FIGS.
6 is easier to understand. That is, FIG. 16 shows a conventional catalyst body 62 having no irregularities, and the catalyst body 2 of the first embodiment.
In order to obtain a raw material gas decomposition efficiency equivalent to that of the first embodiment, the length must be longer than that of the catalyst body 2 of the first embodiment, and the area occupied by the substrate 3 is also increased.

The catalyst body 2 can have various shapes such as a linear shape and a plate shape other than the coil shape.
However, in order to increase the surface area of the catalyst body 2 within a limited space and to increase the contact probability of the raw material gas with the catalyst body 2, a coil shape or a plate shape is appropriate. When the set temperature of the substrate is sufficiently high with respect to the radiant heat from the catalyst body 2, a longer tungsten wire is used.
More preferably, a plurality of coil-shaped portions are connected as described above, and the coil-shaped portions are arranged in a plane parallel to the substrate.

As shown in FIG. 1, a heater power supply 9 is connected to the catalyst body 2. As the heater power supply 9, a power supply that generates Joule heat when energized is usually used. For example, an AC power supply having a commercial frequency that can be adjusted to an output of about 30 to 70 V is used, and a current of about 5 to 15 A flows through the tungsten wire.

With the heater power supply 9 as described above, the catalyst body 2 is maintained at a temperature of about 1600 to 2000 ° C. The temperature control of the catalyst 2 is performed using a signal from a temperature sensor (not shown) that detects the temperature of the catalyst 2. In the thin film manufacturing apparatus 1, a radiation thermometer is used as a temperature sensor. The detection signal of the radiation thermometer is sent to the heater power supply 9, the output voltage of the heater power supply 9 is adjusted, and the temperature of the catalyst body 2 is feedback-controlled.

As shown in FIG. 1, the substrate holder 6 mounts and holds the substrate 3 on the upper surface 6a.
The upper surface 6a is parallel to the catalyst body 2. The substrate holder 6 includes a substrate heater 10 embedded in the substrate holder 6, a controller 11 for controlling the substrate heater 10, a temperature monitor (not shown) such as a thermocouple provided on the substrate holder 6, and a cooling pipe. 12 is provided.

As the substrate heater 10, a cartridge heater or the like that generates Joule heat when energized is used. The signal from the temperature monitor is sent to the controller 11
And the temperature of the substrate holder 6 and finally the temperature of the substrate 3 are controlled to a predetermined temperature. However, even if the temperature control mechanism as described above is provided, the temperature of the substrate 3 at the time of film formation largely depends on the radiant heat from the catalyst body 2. It is difficult to control the heating temperature and the temperature of the substrate 3 independently.

The substrate holder 6 is provided with a substrate contacting means (not shown) for enhancing the contact between the substrate 3 and the substrate holder 6 to improve the accuracy of temperature control as required. As the substrate adhering means, a mechanism for adhering the substrate 3 to the substrate holder 6 by static electricity, a mechanical clamp mechanism for adhering the substrate 3 to the substrate holder 6 by a clamper for pressing a peripheral portion of the substrate 3, or the like can be used.

The thin film forming apparatus 1 having the above configuration
The operation of will be described below with reference to FIG. First,
The evacuation system 7 evacuates the inside of the film forming chamber 4 to a predetermined pressure. Next, the substrate 3 is transferred into the film forming chamber 4 via a gate valve, and is placed on the substrate holder 6. Next, the substrate 3 is heated and maintained at a predetermined temperature. At this time, the substrate 3 is brought into close contact with the substrate holder 6 by a substrate contacting means as necessary, thereby improving the accuracy of temperature control. At this time, the heater power supply 9 of the catalyst 2 is also operated in advance, and the catalyst 2 is heated and maintained at a predetermined temperature.

In the above state, a predetermined source gas (not shown) is supplied into the film forming chamber 4 through the gas supply pipe 5. The supplied source gas comes into contact with the catalyst body 2, and a specific chemical species (not shown) is generated by a catalytic reaction. The chemical species reaches the substrate 3 and a predetermined thin film (not shown) is deposited on the substrate 3. When the thin film reaches a predetermined thickness, the supply of the raw material gas is stopped, the inside of the film forming chamber 4 is evacuated again, and then the substrate 3 is taken out of the film forming chamber 4 to complete the formation of the thin film.

Comparative Example A thin film manufacturing apparatus manufactured as a comparative example with respect to the thin film manufacturing apparatus 1 (FIG. 1) of Example 1 shown in FIG. 1 will be described with reference to FIGS. As shown in FIGS. 15 and 16, a thin film manufacturing apparatus 61 manufactured as a comparative example
Is a structure in which no irregularities are formed on the surface of the catalyst body 62 and the surface is kept flat. Other configurations are the same as those of the thin film manufacturing apparatus 1 of the first embodiment. That is, it can be said that the thin film manufacturing apparatus of the comparative example has the structure of the conventional thin film manufacturing apparatus.

The thin film forming apparatus 1 of the first embodiment (FIG. 1)
2 and the thin film manufacturing apparatus 61 of the comparative example (FIGS. 15 and 16). In any of the thin film production apparatuses, the gas flow rate during film formation is about 20 sccm for SiH ₄ and about 10 sccm for H _2.
cm.

Under these conditions, the substrate heating temperature was set to about 2
The temperature was set at 50 ° C. and the catalyst heating temperature was about 1700 ° C. to 190 ° C.
FIG. 3 shows the difference in the film-forming speed measured between 0 ° C. As shown in FIG. 3, in Example 1, the film formation rate at the time when the catalyst heating temperature was about 1900 ° C. reached about 35 ° / s, but in the comparative example, the catalyst heating temperature was about 1900 ° C.
The film forming speed at the time point is only about 18 ° / s. In other words, in both of Example 1 and Comparative Example, the film forming speed was improved as the catalyst heating temperature was increased. However, even at the same catalyst heating temperature, irregularities were formed on the surface of the catalyst body. It can be seen that Example 1 has a higher film forming speed.

Next, based on the comparison data of FIG. 3 described above, the first embodiment and the first comparative example were set so that the film forming speeds were the same.
The adjustment was performed on the catalyst body 2 of the thin film manufacturing apparatus 1 described above. The adjustment was performed by reducing the area occupied by the catalyst 2 with respect to the substrate 3 (reducing the length). FIG. 4 shows a change in the substrate temperature measured by comparison after performing such adjustment. The other test conditions are the same as those in the above-described film forming speed test.

As shown in FIG. 4, in Example 1, the saturated substrate temperature was suppressed to about 280 ° C. even when the catalyst heating temperature was about 1900 ° C., whereas in the comparative example, the catalyst heating temperature was At about 1900 ° C., the saturated substrate temperature has reached about 390 ° C. That is, in both Example 1 and Comparative Example, the saturated substrate temperature increases as the catalyst heating temperature increases, but Example 1 in which the unevenness 2a is formed on the surface of the catalyst body 2 has a higher saturation substrate temperature. It can be seen that the degree of temperature rise is small, and radiant heat from the catalyst body 2 and heat transport by the raw material gas are suppressed.

Naturally, when the area occupied by the catalyst 2 with respect to the substrate 3 is the same as that of the comparative example,
By setting the catalyst heating temperature of the catalyst body 2 low enough that the film forming speed does not decrease as compared with the comparative example, the influence of radiant heat on the substrate 3 can be suppressed.

Embodiment 2 A thin film manufacturing apparatus according to Embodiment 2 of the present invention will be described with reference to FIG. Note that members having the same names and structures as those in the first embodiment will be described using the same reference numerals.
As shown in FIG. 5, the thin film manufacturing apparatus 21 has a film forming chamber 4 provided with an inner wall 4a for absorbing radiant heat.
Also, to make it easier to measure the radiation heat absorption effect of the inner wall,
The surface of the catalyst body 22 is kept flat without intentionally forming irregularities. Other configurations are the same as those of the thin film manufacturing apparatus 1 of the first embodiment.

The inner wall 4a is a black wall material made of carbon and is arranged so as to cover the periphery and the upper surface of the catalyst body 2. A chamber cooling pipe 4b is passed through the film forming chamber 4 so that radiant heat absorbed by the inner wall 4a can be radiated to the outside of the film forming chamber 4 via a refrigerant (not shown) circulating through the chamber cooling pipe 4b. It has become.

The thin film forming apparatus 21 of the second embodiment (FIG. 5) and the thin film forming apparatus 61 of the comparative example (FIG. 15 and FIG.
6) will be described based on the data obtained by comparison measurement. FIG.
FIG. 6 shows the difference between the substrate temperatures measured comparatively under the same test conditions as the above-described film forming speed test and substrate temperature test shown in FIG. The occupation area of the catalyst body 22 of the second embodiment with respect to the substrate 3 is adjusted so that the film forming speed is the same as that of the comparative example. As shown in FIG. 6, at any catalyst heating temperature, the inner wall 4a and the chamber cooling pipe 4b
The substrate temperature of the thin film manufacturing apparatus 21 according to the second embodiment provided with about is lower than that of the thin film manufacturing apparatus 61 of the comparative example by about 30 ° C.

Third Embodiment A thin-film manufacturing apparatus according to a third embodiment of the present invention will be described with reference to FIG. The members having the same names and structures as those in the first and second embodiments are described using the same reference numerals. As shown in FIG. 7, the thin film manufacturing apparatus 3 according to the third embodiment
Reference numeral 1 denotes a catalyst body 2 having irregularities 2a formed on its surface, that is, the same catalyst body 2 as the catalyst body 2 of Example 1 (see FIG. 2). Other configurations are the same as those of the thin film manufacturing apparatus 2 of the second embodiment.
1, the film forming chamber 4 is provided with an inner wall 4a and a chamber cooling pipe 4b.

The thin film forming apparatus 31 of the third embodiment (FIG. 7) and the thin film forming apparatus 61 of the comparative example (FIG. 15 and FIG.
6) will be described based on the data obtained by comparison measurement. FIG. 8 shows the difference between the substrate temperatures measured comparatively under the same test conditions as the above-mentioned film forming speed test and substrate temperature test shown in FIGS. 3, 4 and 6. The occupied area of the catalyst body 2 of Example 3 with respect to the substrate 3 is adjusted so that the film forming speed is the same as that of the comparative example.

As shown in FIG. 8, in the thin film production apparatus 31 of the third embodiment, the saturated substrate temperature at the time when the catalyst heating temperature is about 1900 ° C. is suppressed to about 260 ° C., whereas the thin film of the comparative example is In the manufacturing apparatus 61, the saturated substrate temperature at the time when the catalyst heating temperature is about 1900 ° C. has reached about 390 ° C. Also, at any other catalyst heating temperature, it can be seen that the thin film production apparatus 31 of Example 3 has a significantly lower saturated substrate temperature than the thin film production apparatus 61 of the comparative example.

In other words, when the unevenness 2a on the surface of the catalyst body 2 is used in combination with the wall material 4a for absorbing radiant heat and the chamber cooling pipe 4b as in the third embodiment, the substrate temperature at the time of film formation can be made wider. The film thickness can be controlled within the range, and by setting the optimum film forming conditions in consideration of the characteristics of the thin film to be formed, a high quality thin film can be manufactured without lowering the film forming speed.

The effect of the present invention does not change even if, for example, a film is formed by using both a discharge plasma reaction and a catalytic reaction in addition to the film formed only by these catalytic reactions. When the discharge plasma reaction is used together, the raw material gas is excited by the plasma, and efficient decomposition is possible. Therefore, the range of film forming conditions such as film forming pressure and catalyst temperature can be further expanded.

Embodiment 4 A thin film manufacturing apparatus according to Embodiment 4 of the present invention will be described with reference to FIGS.
A description will be given based on FIG. In addition, the above-mentioned Embodiments 1-3
Members having the same names and structures as those described above will be described using the same reference numerals. As shown in FIGS. 9 to 11, the thin film manufacturing apparatus 41 according to the fourth embodiment includes a material near the junction 9 b between the catalyst body 2 and the introduction terminal 9 a, which is thermally and chemically stable with respect to the catalyst body 2. It is coated with a coating film 2b composed of Other configurations are the thin film production apparatus 1 according to the first embodiment.
It is the same as (FIG. 1).

The part of the catalyst body 2 coated with the coating film 2b is a part where the temperature of the catalyst body 2 is apt to decrease, and is a part where deposits such as silicide are liable to be generated when the catalyst body 2 comes into contact with the raw material gas. For this reason, the raw material gas is shielded from the raw material gas by the coating film 2b so that the temperature lowering portion of the catalyst body 2 does not directly contact the raw material gas.

Although tungsten carbide is used as the material of the coating film 2b, other materials such as ceramics may be used as long as they are chemically stable to the catalyst body 2 and can withstand high temperatures. . Thus, by coating the temperature-reduced portion of the catalyst body 2 with the coating film 2b and shielding it from the raw material gas, the life of the catalyst body 2 is longer than that of the conventional catalyst body which has been deteriorated by several times of film formation. It has been improved to withstand more than twice the number of uses.

Embodiment 5 FIG. 12 shows a thin film forming apparatus according to Embodiment 5 of the present invention.
This will be described with reference to FIG. In addition, the above-mentioned Examples 1 to
Members having the same names and structures as those of No. 4 will be described using the same reference numerals. As shown in FIG. 12 to FIG.
The thin film manufacturing apparatus 51 according to the above method covers the cylindrical member 2c near the junction 9b between the catalyst body 2 and the introduction terminal 9a, and
By flowing a gas which is thermally and chemically inactive with the catalyst body 2 between the catalyst body 2 and c, the temperature-lowering portion of the catalyst body 2 is shielded from the raw material gas. The arrows shown in FIG. 13 indicate the flow of the inert gas. Other configurations are the same as those of the thin film manufacturing apparatus 1 according to the first embodiment (FIG. 1).

Tungsten carbide was used as the material of the cylinder 2c, but other materials such as alumina and carbon can be used if they can withstand high temperatures and are stable with respect to a raw material gas such as silane. No problem. As the inert gas flowing between the cylindrical member 2c and the catalyst body 2, H ₂ , Ar or a mixed gas thereof can be used.
In 1 with H _2.

As described above, by flowing the inert gas to the temperature-lowering portion of the catalyst body 2 and shielding the raw material gas from the raw material gas, the life of the catalyst body 2 can be reduced by several times. It has been improved so that it can withstand twice or more times of use. In order to prevent the temperature of the catalyst 2 from being lowered by the inert gas, the inert gas is desirably heated to a high temperature before flowing.

As described above, as a method of shielding the temperature-lowering portion of the catalyst 2 from the raw material gas, a method of coating the temperature-lowering portion of the catalyst 2 (Example 4) and a method of shielding the temperature-lowering portion of the catalyst 2 Although the method of flowing an inert gas (Example 5) has been described, these methods may be used alone or in combination. When used together, a further shielding effect from the source gas can be expected.

[0065]

According to the present invention, by forming irregularities on the surface of the catalyst, the surface area of the catalyst increases, the probability of contact with the source gas increases, and the efficiency of decomposition of the source gas improves. By reducing the area occupied by the catalyst body on the substrate or reducing the heating temperature of the catalyst body by an amount corresponding to the improvement in the decomposition efficiency of the raw material gas, the radiant heat from the catalyst body to the substrate can be reduced, and the film forming speed decreases. A thin film can be produced without causing the formation.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged explanatory view showing a catalyst body of the thin film production apparatus shown in FIG.

FIG. 3 is a graph showing the results of comparative measurement of the difference in film forming speed between Example 1 and Comparative Example.

FIG. 4 is a graph showing the results of comparative measurement of the difference in substrate temperature between Example 1 and Comparative Example.

FIG. 5 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a second embodiment of the present invention.

FIG. 6 is a graph showing the results of comparative measurement of the difference in substrate temperature between Example 2 and Comparative Example.

FIG. 7 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a third embodiment of the present invention.

FIG. 8 is a graph showing the results of comparative measurement of the difference in substrate temperature between Example 3 and Comparative Example.

FIG. 9 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a fourth embodiment of the present invention.

FIG. 10 is an enlarged explanatory view showing a coating film forming portion of a catalyst body of the thin film manufacturing apparatus shown in FIG.

11 is an enlarged explanatory view showing a coating film formed on a catalyst body of the thin film production apparatus shown in FIG.

FIG. 12 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a fifth embodiment of the present invention.

FIG. 13 is an enlarged explanatory view showing a portion of the catalyst body of the thin film production apparatus shown in FIG.

FIG. 14 is an enlarged explanatory view showing a tubular member covered by a catalyst body of the thin film production apparatus shown in FIG.

FIG. 15 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a comparative example.

FIG. 16 is an enlarged explanatory view showing a catalyst body of the thin film production apparatus according to the comparative example shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Thin film manufacturing apparatus 2 ... Catalyst 3 ... Substrate 4 ... Film forming chamber 5 ... Source gas supply pipe 6 ... Substrate holder 6a ... Upper surface 7 ... Exhaust system 8 Viewport 9 Heater power supply 10 Heater for substrate 11 Controller 12 Cooling pipe

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) B01J 35/10 301 B01J 35/10 301G C23C 16/44 C23C 16/44 A (72) Inventor Takashi Hayakawa Osaka 22-22 Nagaike-cho, Abeno-ku, Osaka F-term (reference) 4G069 AA02 AA11 BC60B DA05 EA03X EA06 EB14Y 4K030 AA06 AA17 BA29 FA17 KA47 LA15 LA16 LA18 5F045 AC01 BB16 EC05 EE04 EF05 GB05 GB

Claims (8)

[Claims] 1. An apparatus for chemically depositing a thin film on a substrate by using a catalytic reaction between a raw material gas for a thin film and a catalytic body, wherein the catalytic body is in the form of a coil or a plate and comes into contact with the raw material gas. An apparatus for producing a thin film, characterized in that irregularities are formed on the surface. 2. The apparatus according to claim 1, wherein the surface area of the catalyst body is 1.2 to 20 times the surface area of the flat surface. 3. A chamber for accommodating a substrate and a catalyst body and supplying a raw material gas, wherein the chamber is configured such that an inner wall thereof absorbs radiant heat from the catalyst body when the catalyst body is heated. 3. The thin film production apparatus according to claim 1, wherein: 4. The thin film production apparatus according to claim 1, wherein the catalyst body includes a shielding member for shielding a portion that does not rise to a predetermined temperature when heated from a raw material gas. . 5. The thin film production apparatus according to claim 4, wherein the shielding member is a coating film made of a material that is thermally and chemically inert to the catalyst. 6. The thin film production apparatus according to claim 5, wherein the material of the coating film is carbon or tungsten carbide. 7. The thin film producing apparatus according to claim 4, wherein the shielding member is a gas that is thermally and chemically inert to the catalyst. 8. The thin-film production apparatus according to claim 7, wherein the inert gas is H ₂ , Ar, or a mixed gas thereof.