JP2001007712A - Transmitter - Google Patents

Abstract

(57) [Problem] To provide a communication unit in which a main configuration of a communication device capable of reducing cost, power consumption, and miniaturization is mounted on one chip. SOLUTION: A main circuit element in a transmitter is a CM.
The OS process is integrated into one chip, and the chip is additionally equipped with frequency doubling means, frequency dividing means, and temperature compensation means for compensating for the temperature dependence of the oscillator so that low to high frequencies can be used. Alternatively, the chip and the oscillator were packaged in one package.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small and lightweight transmitter, which is used for a wireless information device, especially for a portable information device terminal. For example, a wristwatch having a communication function, a door from a remote place, etc. It is most suitable for a locking device and a terminal device for controlling the device.

[0002]

2. Description of the Related Art Generally, wireless communication technologies are used in various industrial fields and homes, and various proposals have been made.

[0003] In particular, for example, in recent years, mobile phones and PHSs have rapidly spread, and the field of mobile communications has been activated. This technical achievement has spread to indoor wireless data transmission using weak radio. It is also affecting the fields of identification devices, various telemetry and remote controls.

[0004] In radio equipment utilizing high frequency, a main component of a communication device is one chip using a bipolar process using GaAs (gallium, arsenic) or the like as a material for use in portable equipment and small equipment. (See, for example, Japanese Patent Application Laid-Open No. 5-122259).

[0005]

However, the cost of the above-mentioned bipolar type communication chip increases,
The power consumption is relatively large, and furthermore, the size reduction is insufficient, and further higher performance is desired.

Further, GaAs is more expensive and is not preferable in terms of recyclability for protecting the environment.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a communication unit in which the main components of a communication device which can be reduced in cost, power consumption and size are mounted on one chip.

[0008]

According to a first aspect of the present invention, there is provided a SAW oscillator, an oscillator forming an oscillator and an oscillation circuit, a modulator for modulating an output signal of the oscillator, An amplifier for amplifying the output signal of the modulator, and output intensity adjusting means for adjusting the output signal intensity of the amplifier;
In a transmitter including an antenna that emits an output signal of the amplifier as a radio wave, at least the oscillator, the modulator, the amplifier and the output intensity adjustment unit,
It is configured as one chip by a CMOS process.

The invention described in claim 2 of the present application is a SAW
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency doubling means for doubling the output signal of the oscillator, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, and output intensity adjusting means for adjusting the output signal strength of the amplifier. A transmitter having an antenna that emits an output signal of the amplifier as a radio wave, at least the oscillator, the frequency doubling means, the modulator, the amplifier, and the output intensity adjusting means,
It is configured as one chip by a CMOS process.

[0010] The invention described in claim 3 of the present application is a SAW device.
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency doubling means for doubling the output signal of the oscillator, frequency doubling switching means for bypassing the function of the frequency doubling means, a modulator for modulating the output signal of the oscillator, and an amplifier for amplifying the modulated output signal. A transmitter comprising an output intensity adjusting means for adjusting the output signal intensity of the amplifier, and an antenna for emitting the output signal of the amplifier as radio waves, wherein at least the oscillator, the frequency doubling means, and the frequency doubling switching means , The modulator, the amplifier and the output intensity adjusting means,
It is configured as one chip by the S process.

[0011] The invention described in claim 4 of the present application is a SAW device.
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency dividing means for dividing the frequency of the oscillator, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, and output intensity adjusting means for adjusting the output signal intensity of the amplifier; In a transmitter provided with an antenna for emitting an output signal of the amplifier as a radio wave, at least the oscillator, the frequency divider, the modulator, the amplifier, and the output intensity adjuster are integrated into one chip by a CMOS process. It has a configuration.

The invention described in claim 5 of the present application is a SAW
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency dividing means for dividing the frequency of the oscillator, frequency doubling means for doubling the output signal of the oscillator, frequency doubling switching means for bypassing the function of the frequency doubling means, and modulation for modulating the output signal of the oscillator Device, an amplifier for amplifying the modulated output signal, output intensity adjusting means for adjusting the output signal intensity of the amplifier, and a transmitter including an antenna for emitting the output signal of the amplifier as radio waves, at least, The oscillator, the frequency dividing means, the frequency doubling means, the frequency doubling switching means, the modulator, the amplifier, and the output intensity adjusting means,
It is configured as one chip by the OS process.

The invention described in claim 6 of the present application is a SAW
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
A modulator for modulating the output signal of the oscillator; an amplifier for amplifying the modulated output signal; output intensity adjusting means for adjusting the output signal intensity of the amplifier; and compensating for a temperature-dependent characteristic of frequency in the SAW oscillator. A transmitter comprising: a temperature compensating means for performing the operation; and an antenna for emitting an output signal of the amplifier as a radio wave, wherein at least the oscillator, the modulator, the amplifier, the output intensity adjusting means, and the temperature compensating means include a CMOS. It is configured as one chip by the process.

The invention described in claim 7 of the present application is a SAW
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency doubling means for doubling the output signal of the oscillator, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, and output intensity adjusting means for adjusting the output signal strength of the amplifier. A transmitter comprising: a temperature compensating means for compensating a temperature-dependent characteristic of a frequency of the SAW oscillator; and an antenna for emitting an output signal of the amplifier as a radio wave, at least the oscillator, the frequency doubling means, The amplifier, the amplifier, the output intensity adjusting means and the temperature compensating means are
It is configured as one chip by the S process.

According to an eighth aspect of the present invention, in the first to seventh aspects, a frequency adjusting means capable of adjusting an oscillation frequency is provided.

According to a ninth aspect of the present invention, in the first to seventh aspects, the frequency doubling means uses amplitude shift keying, frequency shift keying, or phase shift keying.

According to a tenth aspect of the present invention, in the second, third, fifth or seventh aspect, the frequency doubling means uses a frequency multiplication method or a PLL method.

The invention described in claim 11 of the present application is the first invention.
In any one of the seventh to seventh aspects, an IC integrated into one chip by a CMOS process and the SAW oscillator are packaged in one package.

As described above, according to the present invention, the main circuit of such a communication device is integrated into one chip by using the CMOS process, so that the circuit configuration using the conventional GaAs and bipolar process is used. As compared with the above, it is possible to achieve a significant reduction in cost and power consumption, and it is possible to achieve further downsizing, and to achieve effects based on these.

Further, since it is made into one chip, it is possible to improve user convenience, high performance, and stable operation.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The constructions of the first to eighth embodiments of the transmitter according to the present invention will be described below.

First, a first specific example of a wireless transmitter according to the present invention will be described with reference to FIGS.

In each of the specific examples described later, the description of the components of the circuit that are basically common will be simplified.

That is, the transmitter of the first specific example has the configuration shown in FIG.
As shown in (1), a SAW oscillator 11 which is an oscillator for generating a predetermined reference frequency, an oscillator 12 having an oscillation circuit for stabilizing the reference frequency, and a content for transmitting the stabilized reference frequency A modulator 13 that modulates the signal to reflect the transmission content, an amplifier 14 that amplifies the signal that is modulated by reflecting the transmission content to a predetermined strength, and an output strength adjusting unit 14a that can adjust the output strength of the amplifier. , A transmission antenna A for transmitting the adjusted transmission signal to the air as radio waves, an oscillator 12, a modulator 13,
The amplifier 14 and the output intensity adjusting means 14a are formed on a single chip 10 by using a CMOS process and integrated into one chip.

That is, as shown in FIG. 2, the chip die 10, which is a small piece on which these circuits are actually mounted,
It is sealed in a package P of a predetermined material and is electrically connected to external terminals in a standardized arrangement.

As shown in FIG. 1 again, the SAW oscillator 11 is an abbreviation of a surface acoustic wave oscillator, and is an IDT provided on a piezoelectric substrate such as a quartz crystal formed in a predetermined shape. And a grid-like reflector. When a predetermined voltage is applied to these electrodes, an electric signal is multiple-reflected between the electrodes, and a standing wave is generated. This is an oscillator that outputs a stable constant frequency. Further, an oscillation frequency of several hundred MHz or more can be basically obtained from the SAW oscillator 11.

The output intensity adjusting means 14a can adjust the output intensity of the transmission signal amplified by the amplifier 14, so that if one type of chip is provided, it conforms to various wireless standards. The transmission power intensity can be set.

Further, the oscillator 12 is provided with a frequency adjusting means capable of finely adjusting the oscillation frequency, and can correct the transmission frequency variation of the transmitter due to the frequency variation of the SAW oscillator 11 itself.

The modulation method of the modulator 13 may be an amplitude shift keying method,
Any of the frequency shift keying method and the phase shift keying method may be used.

That is, generally, in order to transmit coded data reflecting the contents of transmission, it is necessary to perform digital modulation, and this digital modulation method is based on whether the amplitude is large or small or not. Amplitude shift keying method (ASK) that performs coding using two different frequencies, frequency shift keying method (FSK) that performs coding using two different frequencies, and phase shift keying method (PSK) that performs coding using two waves signals with shifted phases. ) Etc. are typical. Then, an optimum one is appropriately used according to a transmission rate of transmission data, a condition of transmission / reception sensitivity, and the like.

Therefore, since such a circuit is formed using a CMOS process, the cost can be significantly reduced as compared with a conventional circuit configuration using a GaAs or bipolar process.

Further, according to this CMOS process, the integration density of the circuit can be improved and the size can be reduced.

That is, the size of the chip die can be reduced to, for example, less than about 1 mm square by using the CMOS type according to the present embodiment, for example, in comparison with the conventional 2 mm square package. The size of the P body can also be made as small as possible according to restrictions such as the arrangement of external connection terminals.

In recent years, in the various information equipment industries, it has been necessary to manufacture a large-scale and high-density integrated circuit in order to improve the processing capability. Is nothing but progress. As a by-product of such a large-scale and high-density miniaturization process technology, the effect of reducing the wiring inductance and capacitance in the circuit is brought about, and as a result, the high-frequency characteristics of the device are improved. Has contributed.

In addition, low power consumption, which is a major feature of the CMOS structure, can be achieved, and the amount of heat generated by the circuit itself during operation which adversely affects the operation of the electric circuit can be reduced.

In particular, for example, when the present embodiment is applied to a portable device using a built-in power supply such as a battery, the operable time of the portable device can be extended even if a power supply having the same capacity is used. And improve the basic performance. For the same reason as lower power consumption, a smaller and lighter built-in power supply is required. In particular, the built-in power supply, which accounts for a major part of the weight of a portable device, can be reduced in weight. Can also be planned.

Further, since the main components of the transmitter are integrated into one chip as described above, good quality with little product variation can be ensured even in a high-frequency circuit which is easily affected by various factors. It can be expected that the performance will be stable and fully as designed.

That is, since wiring for connecting each circuit group of the constituent elements is unnecessary, it is possible to avoid a failure due to poor connection of the wiring or disconnection, etc., and also to prevent the capacitance due to the wiring which adversely affects the operation of the circuit. It is possible to expect that the stable performance as designed is sufficiently exhibited because the inductive component and the inductive component are reduced.

In particular, such a circuit using a high frequency is easily affected by the circuit operation due to human factors and various external factors, but is integrated into one chip. Intervention of human factors can be eliminated, and convenience for the user can be improved.

That is, when the transmitter is formed by using another component as a main component of the high-frequency transmitter, a good operation may be hindered due to performance characteristics and quality variation of each component, Due to the length of the wiring due to the arrangement of parts and the interference between wirings, the performance as designed cannot be exhibited, so that the circuit design is difficult and the assembling handleability is poor.

However, since they are integrated into one chip in which a normal operation is secured in advance, these can be avoided beforehand, and can be easily handled.
High reliability can be ensured.

Next, a transmitter according to a second embodiment of the present invention will be described with reference to FIG.

The transmitter of this embodiment is the same as that of the first embodiment described above.
A frequency doubling means 15 is added to the chip configuration. Not only transmission using a fixed frequency, but also a variable transmission frequency is configured so that an arbitrary transmission frequency can be selected by a user or the like. The transmission frequency is doubled by the frequency doubling means 15 so that transmission can be performed at a higher frequency than in the first specific example.

That is, as shown in FIG.
And an amplifier 14, a frequency doubling means 15 is provided, and these oscillator 12, modulator 13, amplifier 14, output intensity adjusting means 14a, and frequency doubling means 15 are provided.
Are formed on a single chip 10 by using a CMOS process to be integrated into one chip.

Although not shown, the frequency doubling means 15 is an external input means for a user or the like to input and set an arbitrary transmission frequency, or an automatic setting means for automatically setting a predetermined transmission frequency. The means are electrically connected.

The frequency doubling method of the frequency doubling means 15 may be a frequency doubling method for outputting n times the frequency of an input signal, or a PLL (phase locked), depending on the use conditions. -A method selected from the (loop) method may be used.

The PLL system includes a phase comparator, a loop filter, a VCO
(Voltage-controlled oscillator) and a frequency divider are connected in a loop, and the output frequency of the VCO is adjusted according to the ratio set for the frequency divider to the input frequency input to the phase comparator. To perform a circuit operation for doubling. So, for example,
When the frequency division ratio of the frequency divider is 1/2, a frequency twice as high as the input frequency can be extracted as the output frequency of the VCO.

Therefore, as described in the first specific example, not only the effect of being made into one chip by using the CMOS process can be obtained, but also the higher frequency can be arbitrarily selected according to the transmitter of this example. The range of use as a transmitter can be expanded.

Next, a transmitter according to a third embodiment of the present invention will be described with reference to FIG.

In the present embodiment, as shown in FIG.
The frequency doubling switching means 15a is added to the one-chip configuration of the specific example.
Is added to allow the function of the frequency doubling means 15 to be bypassed so that not only a higher frequency but also a transmission at a fixed frequency uniquely determined by the SAW oscillator can be selected.

That is, as shown in FIG. 4, the frequency doubling means 15 is provided with a frequency doubling switching means 15a, and the oscillator 12, modulator 13, and amplifier 1
4. The output intensity adjusting means 14a, the frequency doubling means 15, and the frequency doubling switching means 15a are formed on a single chip 10 by using a CMOS process and integrated into one chip.

Therefore, as described in the first specific example, not only the effect of being made into one chip by using the CMOS process can be obtained, but also the transmitter of this example can arbitrarily select a wider range of transmission frequencies. The range of use as a transmitter can be expanded.

Next, a transmitter according to a fourth embodiment of the present invention will be described with reference to FIG.

In the present example, as shown in FIG.
The frequency dividing means 17 is added to the one-chip configuration of the specific example,
This enables transmission at a lower frequency than a fixed frequency uniquely determined by the AW oscillator.

That is, as shown in FIG.
The frequency divider 17 is interposed between the oscillator 12, the modulator 13, and the amplifier 1.
4. The output intensity adjusting means 14a and the frequency dividing means 17
It is formed on a single chip 10 by using the S process to be integrated into one chip.

Therefore, as described in the first specific example, not only the effect of being made into one chip by using the CMOS process can be obtained, but also according to the transmitter of this example, it is uniquely determined by the SAW oscillator. Transmission at a frequency lower than the oscillation frequency of several hundred MHz or more can be performed, and the range of use as a transmitter can be expanded.

Next, a transmitter according to a fifth embodiment of the present invention will be described with reference to FIG.

In the present example, as shown in FIG.
This is a configuration in which a specific example and four specific examples are combined. That is, the frequency doubling means 15, the frequency doubling switching means 15a, and the frequency dividing means 17 are added to the one-chip configuration of the first specific example described above.
Was added to enable transmission over a wider range from a frequency band lower than the oscillation frequency of the SAW oscillator to a higher frequency band for a fixed frequency of several hundred MHz uniquely determined by the SAW oscillator. Things.

That is, as shown in FIG.
, A frequency doubling means 15, a frequency doubling switching means 15a, and a frequency dividing means 17 are interposed between the oscillator 12, the modulator 13, the amplifier 14,
The output intensity adjusting means 14a, the frequency doubling means 15, the frequency doubling switching means 15a, and the frequency dividing means 17 are formed on a single chip 10 by using a CMOS process and integrated into one chip.

Therefore, as described in the first specific example, not only the effect of being made into one chip by using the CMOS process can be obtained, but also the transmitter of the present embodiment can provide a low oscillation frequency band to a high oscillation frequency band. Can be arbitrarily selected and the range of use as a transmitter can be expanded.

Next, a transmitter according to a sixth embodiment of the present invention will be described with reference to FIGS.

In this example, as shown in FIG.
The temperature compensating means 16 is added to the one-chip configuration of the specific example, so that the oscillation frequency of the SAW oscillator 11 can be stabilized stably regardless of the surrounding temperature environment during the operation.

That is, as shown in the graph of FIG. 8, in general, the oscillation frequency of the SAW oscillator 11 has a temperature-dependent characteristic with a peak of 20 ° C. to around 30 ° C. as a reference. Even if the oscillation frequency is set to oscillate, the frequency fluctuates to some extent depending on the temperature environment.

Therefore, in this example, the SAW oscillator 1
In order to keep the temperature-dependent characteristic of No. 1 within a predetermined allowable range,
The configuration is such that a temperature compensating means 16 having characteristics opposite to the temperature-dependent characteristics of the SAW oscillator 11 is added.

That is, as shown in FIG. 7 again, a new temperature compensating means 16 is additionally provided, and the temperature compensating means 16 is connected to the oscillator 12.
The modulator 13, the amplifier 14, the output intensity adjusting means 14a, and the temperature compensating means 16 are formed on a single chip 10 by using a CMOS process and integrated into one chip.

The temperature-compensation means 16 for correcting the frequency-temperature characteristics of such an oscillator generally includes 1)
There are three types: direct compensation type, 2) indirect compensation type (analog), and 3) indirect compensation type (digital), and any one of them may be used as appropriate according to use conditions.

Therefore, as described in each of the above-described embodiments, not only the effect of being made into one chip by using the CMOS process can be obtained, but also the oscillation frequency obtained from the SAW oscillator 11 is affected by the change in the temperature environment during use. Regardless, since it can be stabilized in a predetermined manner, the performance and reliability of the transmitter can be improved, and the restriction on the temperature condition to be used can be relaxed.

Next, a transmitter according to a seventh embodiment of the present invention will be described with reference to FIG.

In this example, the frequency doubling means 15 added in the second example and the temperature compensating means 16 added in the sixth example are both added to the one-chip configuration of the first example described above. It was done.

That is, the oscillator 12, the modulator 13, the frequency doubling means 15, the amplifier 14, the output intensity adjusting means 14a and the temperature compensating means 16, which are the main components of the transmitter,
It is formed on a single chip 10 by using a CMOS process and integrated into one chip.

Therefore, not only the effects of the second embodiment and the sixth embodiment are achieved, but also because these components are arranged on one chip, the convenience for the user and the reliability as product parts are obtained. Can be improved.

Next, a transmitter according to an eighth embodiment of the present invention will be described with reference to FIGS.

In this embodiment, the same circuit configuration as that of the above-described seventh embodiment is arranged on one chip, and the SAW oscillator 1 is newly added in a single package P in which the chip 10 is sealed.
1 is also stored at the same time.

That is, as shown in FIGS. 10 and 11, the oscillator 12, the modulator 13, the frequency doubling means 15, the amplifier 14, the output intensity adjusting means 14a, and the temperature compensating means 16, which are main components of the transmitter, are provided. The semiconductor device is formed on a single chip 10 by using a CMOS process to be integrated into one chip, and the chip 10 and the SAW oscillator 11 are sealed in the same package P.

Therefore, the one chip 10 having the main circuit configuration of the transmitter and the SAW oscillator 11 are
In one package, the temperature compensating means 16
Is enclosed in a package P of the same material and the same thickness in the vicinity of the SAW oscillator 11,
The same influence of the ambient temperature environment can be obtained, so that the compensation sensitivity and the compensation accuracy by the temperature compensating means 16 can be improved, and a more stable frequency can be secured against the surrounding fluctuating temperature environment. Performance can be improved.

As shown in FIG. 12, the SAW oscillator 11 may be directly mounted on the chip 10 to achieve more stable operation and higher performance.

That is, the chip 10 and the SA shown in FIG.
The W oscillator 11 is connected and connected using a general wire bonding method. However, the chip 10 and the SAW oscillator 11 shown in FIG. 12 are directly connected without using this wire bonding method. It is connected to the.

Therefore, it is possible to prevent the operation failure due to the wire bonding failure and to eliminate the need for the wire portion itself, so that the capacitive component and the inductive component due to the wire portion are deleted, and the unstable element in the circuit is eliminated. Since it can be removed, it is possible to cope with higher high-frequency performance.

Furthermore, since the main constituent elements of the transmitter including the oscillator are integrated into one package and made into a single component, even if the user or the like performs mounting, individual characteristics that are different for each individual are different. No characteristic differences are generated, good assemblability and handleability can be ensured, assembling cost can be reduced, stable replacement can be ensured, and quick and easy troubleshooting can be taken. .

Further, since a single component is formed in one package as described above, one chip mounting the main components of the transmitter and one chip
It is possible to avoid a problem in connection and wiring with the AW oscillator 11 and a mounting problem that occurs in the case of separate components from each other, so that more stable performance as designed can be expected.

Incidentally, regardless of the presence or absence of the temperature compensating means 16,
In the above-described first to seventh specific examples, as in this example, one package including the main configuration of the transmitter and the SAW oscillator 11
The effect obtained by stably securing the signal transmission path between the first and second transmission lines may be obtained.

[0082]

According to the first aspect of the present invention, the SA
A W oscillator, an oscillator forming an oscillation circuit with the oscillator, a modulator for modulating an output signal of the oscillator, an amplifier for amplifying an output signal of the modulator, and adjusting an output signal strength of the amplifier. In a transmitter including an output intensity adjusting unit and an antenna for emitting an output signal of the amplifier as a radio wave, at least the oscillator, the modulator, the amplifier, and the output intensity adjusting unit are integrated into one chip by a CMOS process. The configuration is as follows.

The invention described in claim 2 of the present application is a
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency doubling means for doubling the output signal of the oscillator, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, and output intensity adjusting means for adjusting the output signal strength of the amplifier. In a transmitter including an antenna that emits an output signal of the amplifier as a radio wave, at least the oscillator, the frequency doubling means, the modulator, the amplifier, and the output intensity adjusting means,
It is configured as one chip by a CMOS process.

The invention described in claim 3 of the present application is a
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency doubling means for doubling the output signal of the oscillator, frequency doubling switching means for bypassing the function of the frequency doubling means, a modulator for modulating the output signal of the oscillator, and an amplifier for amplifying the modulated output signal. An output intensity adjusting means for adjusting the output signal intensity of the amplifier, and a transmitter including an antenna for emitting the output signal of the amplifier as radio waves, at least the oscillator, the frequency doubling means, the frequency doubling switching means, The modulator,
The amplifier and the output intensity adjusting means are configured as one chip by a CMOS process.

The invention described in claim 4 of the present application is a
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency dividing means for dividing the frequency of the oscillator, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, and output intensity adjusting means for adjusting the output signal intensity of the amplifier; In a transmitter provided with an antenna for emitting an output signal of the amplifier as a radio wave, at least the oscillator, the frequency divider, the modulator, the amplifier, and the output intensity adjuster are integrated into one chip by a CMOS process. It has a configuration.

The invention described in claim 5 of the present application is a
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency dividing means for dividing the frequency of the oscillator, frequency doubling means for doubling the output signal of the oscillator, frequency doubling switching means for bypassing the function of the frequency doubling means, and modulation for modulating the output signal of the oscillator Device, an amplifier for amplifying the modulated output signal, output intensity adjusting means for adjusting the output signal intensity of the amplifier, and a transmitter including an antenna for emitting the output signal of the amplifier as radio waves, at least, The oscillator, the frequency dividing means, the frequency doubling means, the frequency doubling switching means, the modulator, the amplifier, and the output intensity adjusting means,
It is configured as one chip by the OS process.

The invention described in claim 6 of the present application is a
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
A modulator for modulating the output signal of the oscillator; an amplifier for amplifying the modulated output signal; output intensity adjusting means for adjusting the output signal intensity of the amplifier; and compensating for a temperature-dependent characteristic of frequency in the SAW oscillator. A transmitter comprising: a temperature compensating means for performing the operation; and an antenna for emitting an output signal of the amplifier as a radio wave, wherein at least the oscillator, the modulator, the amplifier, the output intensity adjusting means, and the temperature compensating means include a CMOS. It is configured as one chip by the process.

The invention described in claim 7 of the present application is a
An oscillator, an oscillator forming an oscillation circuit with the oscillator,
Frequency doubling means for doubling the output signal of the oscillator, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, and output intensity adjusting means for adjusting the output signal strength of the amplifier. A transmitter comprising: a temperature compensating means for compensating a temperature-dependent characteristic of a frequency of the SAW oscillator; and an antenna for emitting an output signal of the amplifier as a radio wave, at least the oscillator, the frequency doubling means, The amplifier, the amplifier, the output intensity adjusting means and the temperature compensating means are
It is configured as one chip by the S process.

The eighth aspect of the present invention is the invention according to the first to seventh aspects, wherein a frequency adjusting means capable of adjusting the oscillation frequency is provided.

The ninth aspect of the present invention is the invention according to the first to seventh aspects, wherein the oscillator uses amplitude shift keying, frequency shift keying, or phase shift keying.

According to a tenth aspect of the present invention, in the second, third, fifth or seventh aspect, the frequency doubling means is configured to use a frequency multiplication method or a PLL method.

The invention described in claim 11 of the present application is the first invention.
In the seventh to seventh aspects, the IC integrated into one chip by the CMOS process and the SAW oscillator are packaged in one package.

As described above, according to the present invention, the main circuit of such a communication device is integrated into one chip by using the CMOS process, so that the circuit configuration using the conventional GaAs and bipolar process is used. As compared with the above, it is possible to achieve a significant reduction in cost and power consumption, and it is possible to achieve further downsizing, and to achieve effects based on these.

Further, since it is made into one chip, it is possible to improve user convenience, high performance, and stable operation.

[Brief description of the drawings]

FIG. 1 is a circuit block diagram showing an overall configuration of a transmitter according to a first specific example of the present invention.

FIG. 2 is a schematic perspective view of a transmitter according to the specific example.

FIG. 3 is a circuit block diagram showing an overall configuration of a transmitter according to a second specific example of the present invention.

FIG. 4 is a circuit block diagram showing an entire configuration of a transmitter according to a third specific example of the present invention.

FIG. 5 is a circuit block diagram showing an entire configuration of a transmitter according to a fourth specific example of the present invention.

FIG. 6 is a circuit block diagram showing an overall configuration of a transmitter according to a fifth specific example of the present invention.

FIG. 7 is a circuit block diagram showing an overall configuration of a transmitter according to a sixth specific example of the present invention.

FIG. 8 is a graph showing a temperature-dependent characteristic of an oscillator according to this example.

FIG. 9 is a circuit block diagram showing an overall configuration of a transmitter according to a seventh specific example of the present invention.

FIG. 10 is a circuit block diagram showing an overall configuration of a transmitter according to an eighth specific example of the present invention.

FIG. 11 is a schematic perspective view of a transmitter according to this specific example.

FIG. 12 is a schematic perspective view of another example related to the transmitter of this example.

[Explanation of symbols]

 Reference Signs List 10 transmitting chip 11 SAW oscillator 12 oscillator 13 modulator 14 amplifier 14a output intensity adjusting means 15 frequency doubling means 15a frequency doubling switching means 16 temperature compensating means 17 frequency dividing means A antenna P package

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J079 AA04 BA02 BA44 BA47 FA05 GA04 GA12 JA03 KA05 5K060 AA10 BB00 CC04 HH01 HH05 HH06 HH15 HH21 JJ22 KK06 LL01 LL15

Claims (11)

[Claims] A SAW oscillator, an oscillator forming an oscillator and an oscillation circuit, a modulator for modulating an output signal of the oscillator, an amplifier for amplifying an output signal of the modulator,
A transmitter comprising: an output intensity adjusting means for adjusting an output signal intensity of the amplifier; and an antenna for emitting the output signal of the amplifier as radio waves, at least the oscillator, the modulator, the amplifier, and the output intensity adjustment. A transmitter in which the means is integrated into one chip by a CMOS process. 2. A SAW oscillator, an oscillator forming an oscillator and an oscillator circuit, frequency doubling means for doubling an output signal of the oscillator, a modulator for modulating an output signal of the oscillator, An amplifier for amplifying the output signal, and output intensity adjusting means for adjusting the output signal intensity of the amplifier;
A transmitter comprising an antenna for emitting an output signal of the amplifier as a radio wave, wherein at least the oscillator, the frequency doubling means, the modulator, the amplifier, and the output intensity adjusting means include a CM.
A transmitter characterized by being integrated into one chip by an OS process. 3. A SAW oscillator, an oscillator forming an oscillation circuit with the oscillator, frequency doubling means for doubling an output signal of the oscillator, frequency doubling switching means for bypassing a function of the frequency doubling means, A modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal, output intensity adjusting means for adjusting the output signal intensity of the amplifier, and an antenna for emitting the output signal of the amplifier as a radio wave; A transmitter comprising at least the oscillator, the frequency doubling means, the frequency doubling switching means, the modulator, the amplifier, and the output intensity adjusting means integrated into one chip by a CMOS process. Machine. 4. A SAW oscillator, an oscillator forming an oscillator and an oscillator circuit, frequency dividing means for dividing the frequency of the oscillator, a modulator for modulating an output signal of the oscillator,
A transmitter including an amplifier for amplifying the modulated output signal, output intensity adjustment means for adjusting the output signal intensity of the amplifier, and an antenna for emitting the output signal of the amplifier as a radio wave, at least the oscillator, The frequency divider, the modulator,
A transmitter, wherein the amplifier and the output intensity adjusting means are integrated into one chip by a CMOS process. 5. A SAW oscillator, an oscillator forming an oscillation circuit with the oscillator, frequency dividing means for dividing the frequency of the oscillator, frequency doubling means for doubling an output signal of the oscillator, Frequency doubling switching means for bypassing the function of the doubling means, a modulator for modulating the output signal of the oscillator, an amplifier for amplifying the modulated output signal,
A transmitter comprising output intensity adjusting means for adjusting the output signal intensity of the amplifier, and an antenna for emitting the output signal of the amplifier as radio waves, at least the oscillator, the frequency dividing means, the frequency doubling means, and the frequency A transmitter, wherein the doubling switching means, the modulator, the amplifier, and the output intensity adjusting means are integrated into one chip by a CMOS process. 6. A SAW oscillator, an oscillator forming an oscillator and an oscillator circuit, a modulator for modulating an output signal of the oscillator, an amplifier for amplifying the modulated output signal, and an output signal of the amplifier A transmitter comprising: an output intensity adjusting means for adjusting the intensity; a temperature compensating means for compensating a temperature-dependent characteristic of a frequency in the SAW oscillator; and an antenna for emitting an output signal of the amplifier as a radio wave. , The modulator, the amplifier, the output intensity adjusting means and the temperature compensating means,
A transmitter characterized by being made into one chip by the S process. 7. A SAW oscillator, an oscillator forming an oscillator and an oscillator circuit, frequency doubling means for doubling an output signal of the oscillator, a modulator for modulating an output signal of the oscillator, An amplifier for amplifying an output signal, and output intensity adjusting means for adjusting the output signal intensity of the amplifier;
A transmitter comprising: a temperature compensating means for compensating a temperature-dependent characteristic of a frequency in the SAW oscillator; and an antenna for emitting an output signal of the amplifier as a radio wave. At least the oscillator, the frequency doubling means, and the modulator A transmitter, wherein the amplifier, the output intensity adjusting means and the temperature compensating means are integrated into one chip by a CMOS process. 8. The transmitter according to claim 1, wherein the oscillator is provided with frequency adjusting means for adjusting an oscillation frequency. 9. The transmitter according to claim 1, wherein the modulation circuit uses amplitude shift keying, frequency shift keying, or phase shift keying. 10. The transmitter according to claim 2, wherein the frequency doubling means uses a frequency multiplication method or a PLL method. 11. The transmitter according to claim 1, wherein the IC integrated into one chip by the CMOS process and the SAW oscillator are packaged in one package.