JP2001076864A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

(57) [Problem] To provide a light emitting element having high light extraction efficiency. A transparent electrode is formed on a glass substrate.
A plurality are formed at predetermined intervals so as to be parallel to each other. Further, the transparent electrode 20 is formed so as to have a gap 60 between the transparent electrode 20 and the glass substrate 10, and has irregularities on the surface on the glass substrate 10 side to change the direction of light. The light emitting layer 40
The transparent electrode 20 is formed at a predetermined interval in a direction perpendicular to the transparent electrode 20 on a surface opposite to the glass substrate 10 and emits light according to an applied voltage. The counter electrode 50 is formed of the light emitting layer 4
0 and reflects light.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to a light emitting device capable of improving light extraction efficiency to the outside and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a light emitting element used for a display device or the like, there is an organic EL (electroluminescence) element having a structure as shown in FIGS. 8A and 8B. FIG. 8B is a cross-sectional view taken along the line AA ′ of FIG. As shown in FIG. 8, the organic EL element includes a glass substrate 110, a transparent electrode 120, an interlayer insulating film 130,
It is composed of a light emitting layer 140 and a counter electrode 150.

[0003] A plurality of transparent electrodes 120 are provided on the glass substrate 110, and are formed at predetermined intervals so as to be parallel to each other. The interlayer insulating film 130 is formed on the glass substrate 110 so as to fill the space between the transparent electrodes 120, and electrically separates the transparent electrodes 120 from each other. The light emitting layer 140 is formed on the transparent electrode 120 and the interlayer insulating film 130, and is made of, for example, an organic EL (electroluminescence).
Materials. Further, the light emitting layer 140 emits light according to the applied voltage.

A plurality of opposing electrodes 150 are provided on the light emitting layer 140 and are formed so as to be substantially perpendicular to the transparent electrode 120 at predetermined intervals. The counter electrode 150 is made of Al
It is formed from a metal such as (aluminum) and reflects light. Light-emitting device (organic EL device) configured as above
In this case, when a voltage is applied between the transparent electrode 120 and the counter electrode 150, the light emitting layer 140 emits light. The light emitted from the light emitting layer 140 is emitted directly or through the counter electrode 15.
The light is reflected by 0 and enters the transparent electrode 120. And
Light that has entered the transparent electrode 120 exits through the glass substrate 110.

[0005]

However, in the light emitting device (organic EL device) having the above-described structure, the transparent electrode 12
0 is formed so as to be in contact with the glass substrate 110, and its interface is flat. For this reason, when the refractive index (about 2.00 in the case of ITO) of the transparent electrode 120 is larger than the refractive index (about 1.45) of the glass substrate 110, light transmitted from the light emitting layer 140 into the transparent electrode 120 is reduced. , Transparent electrode 120
May be totally reflected at the interface between the substrate and the glass substrate 110. Thus, the glass substrate 110 and the transparent electrode 12
When the light is totally reflected at the interface with 0, the light is repeatedly reflected between the transparent electrode 120 and the counter electrode 150 and absorbed.

The transparent electrode 120 on the glass substrate 110
The surface on the opposite side is in contact with external air (or vacuum). Since the refractive indices of the glass substrate 110, the transparent electrode 120, and the outside air (or vacuum) are different from each other, the light that has entered the glass substrate 110 does not always exit to the outside. In particular, light having an incident angle of about 45 ° or more from the glass substrate 110 to the outside is totally reflected at the interface between the glass substrate 110 and the outside, and is confined in the glass substrate 110 or emitted from the end face of the glass substrate 110. In some cases.

As described above, in the conventional light emitting device, there is much unusable light confined inside the light emitting device or emitted from the end face of the glass substrate 110. Therefore, only about 20% of the available light emitted to the outside can be obtained from the light emitted from the light emitting layer 140. That is, the conventional light emitting element has a problem that the efficiency of extracting available light to the outside is poor. In addition, since the light extraction efficiency is low, there is a problem that wasteful power consumption is large.

In the above light emitting device, the glass substrate 110
Even if the transparent electrode 120 is directly in contact with the outside atmosphere (or vacuum) without passing through, the refractive index of the transparent electrode 120 is larger than the refractive index of the atmosphere (vacuum). Light is easily totally reflected at the interface between the light and the outside, and the light extraction efficiency is further deteriorated. Therefore, an object of the present invention is to provide a light emitting element having high light extraction efficiency and a method for manufacturing the same.

[0009]

In order to achieve the above object, a light emitting device according to a first aspect of the present invention has a light transmitting substrate and a gap between the substrate and the substrate. A first electrode having a changing means for transmitting light and changing a traveling direction of light on the surface on the substrate side; and a first electrode formed on a surface of the first electrode opposite to the substrate. A light-emitting layer that emits light in accordance with an applied voltage, and a second electrode that is formed on the light-emitting layer and reflects light.

According to the present invention, the traveling direction of the light emitted from the light emitting layer can be changed in various directions by the changing means of the first electrode. For this reason, the light reflected by the changing means of the first electrode is not emitted to the outside from the first electrode, but is emitted to the outside by repeating reflection several times between the first electrode and the second electrode. Can be. In this manner, light emitted from the light emitting layer can be emitted to the outside with high efficiency, and the same brightness as in the related art can be obtained with a small operating voltage.

[0011] The first electrode may have an uneven shape on the surface as the changing means. The first electrode may include, as the changing means, a reflective material formed at a predetermined position on a surface and reflecting light. The first electrode may include, as the changing means, a refraction material formed at a predetermined position on a surface and having a different refractive index from the first electrode.

A method for manufacturing a light-emitting device according to a second aspect of the present invention is a method for manufacturing a light-emitting device, comprising: a light-transmitting substrate; a light-transmitting substrate; A first electrode forming step of forming one electrode so as to have a gap between the substrate and the substrate, and emitting light in accordance with an applied voltage on a surface of the first electrode opposite to the substrate A light emitting layer forming step of forming a light emitting layer; and a second electrode forming step of forming a second electrode that reflects light on the light emitting layer.

According to the present invention, the traveling direction of the light emitted from the light emitting layer can be changed in various directions by the changing means of the first electrode. For this reason, the light reflected by the changing means of the first electrode is not emitted to the outside from the first electrode, but is emitted to the outside by repeating reflection several times between the first electrode and the second electrode. Can be. In this manner, light emitted from the light emitting layer can be emitted to the outside with high efficiency, and the same brightness as in the related art can be obtained with a small operating voltage.

[0014] The first electrode forming step may include, as the changing means, a step of forming irregularities on one surface of the first electrode. The first electrode forming step includes a sacrifice film forming step of forming a sacrifice film having irregularities on a surface in a predetermined region on the substrate, and forming the first electrode on the sacrifice film. The method may further include a changing means forming step of forming irregularities on one surface of the electrode, and a removing step of forming the gap by removing the sacrificial film.

[0015] The first electrode forming step may include, as the changing means, a step of disposing a reflective material that reflects light at a predetermined position on one surface of the first electrode. The first electrode forming step includes a sacrificial film forming step of forming a sacrificial film in a predetermined region on the substrate, a reflecting material forming step of forming the reflecting material on a surface of the sacrificial film, and forming the reflecting material. Forming the first electrode on the sacrificial film, thereby forming a reflecting means on one surface of the first electrode; and forming a gap by removing the sacrificial film. And a step.

[0016] The first electrode forming step may include, as the changing means, a step of disposing a refractive material having a different refractive index from the first electrode at a predetermined position on one surface of the first electrode. The first electrode forming step includes forming a sacrificial film in a predetermined region on a substrate that transmits light, a sacrificial film forming step of forming the refraction material on a surface of the sacrificial film, Forming the first layer on the sacrificial film on which the
The method may further include a change means forming step of forming the electrode to place the refractive material on one surface of the first electrode, and a removing step of forming the gap by removing the sacrificial film.

[0017]

Next, a light emitting device according to a first embodiment of the present invention will be described with reference to the drawings. FIGS. 1A and 1B are configuration diagrams of a light emitting device according to the first embodiment. FIG. 1 (b) is the same as FIG.
It is AA 'sectional drawing of (a).

As shown in FIG. 1, the light emitting device includes a glass substrate 10, a transparent electrode 20, an interlayer insulating film 30, a light emitting layer 40, and a counter electrode 50. A plurality of transparent electrodes 20 are provided on the glass substrate 10 and are formed so as to be parallel to each other at predetermined intervals. Transparent electrode 2
0 is an optically transparent electrode, for example, ITO (Indi
um Tin Oxide). A gap 60 exists between the transparent electrode 20 and the glass substrate 10, and irregularities are formed on the surface of the transparent electrode 20 on the gap 60 side. The irregularities are formed in order to change the traveling direction of the light emitted from the light emitting layer 40 by reflection or refraction, as will be described later.

The interlayer insulating film 30 is formed on the glass substrate 10 so as to fill the space between the transparent electrodes 20, and electrically separates the transparent electrodes 20 from each other. Further, the interlayer insulating film 30 prevents a substance from entering the gap 60 and secures the strength of the transparent electrode 20 formed on the gap 60. A plurality of light emitting layers 40 are provided on the transparent electrode 20 and the interlayer insulating film 30, and are formed at predetermined intervals so as to be substantially perpendicular to the transparent electrode 20. Further, the light emitting layer 40 is formed of, for example, an organic EL (electroluminescence) material, and emits light in accordance with an applied voltage. The counter electrode 50 is formed on the light emitting layer 40. The counter electrode 50 is made of, for example, Ca
It is formed of (calcium), Li (lithium), Al (aluminum), or the like, and reflects light.

Next, a description will be given of a method of manufacturing the light-emitting device configured as described above. 2 (a) to 2 (h)
FIG. 3 is a cross-sectional view illustrating each manufacturing process of the light-emitting element. First, FIG. 2 is formed by a CVD (chemical vapor deposition) method or the like.
As shown in FIG.
A metal film 60a of nm is formed. The metal film 60
The material of a is, for example, an alloy of Cr (chromium) and Zn (zinc).

Next, as shown in FIG. 2B, a plurality of metal films 60a are patterned by photolithography, etching or the like so as to extend parallel to each other in a direction perpendicular to the plane of the paper. After the patterning of the metal film 60a, the surface region of the metal film 60a on the side opposite to the glass substrate 10 is etched. At this time, for example, the surface region of the metal film 60a is etched under conditions (such as the type of etching agent and etching temperature) in which only one of Cr and Zn constituting the metal film 60a is substantially etched.
As a result, as shown in FIG.
Irregularities are formed on the surface opposite to the glass substrate 10 of a.

Thereafter, the metal film 6 is formed by a CVD method or the like.
ITO is deposited on Oa and the glass substrate 10. Then, the ITO is patterned by etching using photolithography or the like, and as shown in FIG. 2D, a plurality of transparent electrodes 20 extend in a direction orthogonal to the extending direction of the metal film 60a and are arranged parallel to each other. To be formed. At this time, since the transparent electrode 20 is formed on the metal film 60 a having the unevenness on the surface opposite to the glass substrate 10, the unevenness of the metal film 60 a is also formed on the transparent electrode 20. In addition, since the unevenness of the transparent electrode 20 is formed in order to change the traveling direction of light in various ways, the unevenness of the metal film 60a may be equal to or greater than the wavelength of light emitted from the light emitting layer 40. It is formed so that it becomes the size of.

Then, by wet etching or the like,
As shown in FIG. 2E, the gap 60 is formed by removing the metal film 60a. At this time, the metal film 60a is etched under conditions such that the etching rate of the transparent electrode 20 is sufficiently lower than the etching rate of the metal film 60a (for example, using a TW solution as an etching solution). As described above, since the transparent electrodes 20 are formed at predetermined intervals, the metal film 60
a is exposed, and etching is started from the exposed portion.

After forming the gap 60, as shown in FIG. 2F, the interlayer insulating film 3 is formed on the glass substrate 10 and the transparent electrode 20.
0 is formed. At this time, the interlayer insulating film 30 is formed by applying a resist material having a high viscosity, for example, so as not to fill the gap 60. Subsequently, the interlayer insulating film 30 is patterned by photolithography or the like so as to correspond to the formation pattern of the light emitting layer 40 and the counter electrode 50 as shown in FIG. Specifically, the part of the interlayer insulating film 30 corresponding to the formation region of the light emitting layer 40 and the counter electrode 50 is removed.

Then, for example, CV using a metal mask
As shown in FIG. 2 (h), the transparent electrode 20
The light emitting layer 40 and the counter electrode 50 are formed in this order in a predetermined region on the interlayer insulating film 30. As described above, the light emitting device shown in FIG. 1 is completed.

As described above, by forming the gap 60 between the glass substrate 10 and the transparent electrode 20 and forming irregularities on the transparent electrode 20, the light emitted from the light emitting layer 40 can be efficiently transmitted to the outside. The following can be taken out. In the light emitting element formed as described above, when a predetermined voltage is applied between the transparent electrode 20 and the counter electrode 50, the light emitting layer 40 in a portion to which the voltage is applied emits light.

The light emitted from the light emitting layer 40 directly enters the transparent electrode 20 as shown in FIG. 3A, for example, or enters the transparent electrode 20 after being reflected by the counter electrode 50. I do. Light that has entered the transparent electrode 20 from the light emitting layer 40 enters the interface between the transparent electrode 20 and the gap 60.

When the angle of incidence from the transparent electrode 20 to the gap 60 is small, for example, as shown in FIG.
Directly enter 0. Air is contained in the gap 60, and the refractive index thereof is smaller than the refractive index of the transparent electrode 20. Therefore, if the interface between the transparent electrode 20 and the gap 60 is flat, if the incident angle is large, the light may be totally reflected and confined between the transparent electrode 20 and the counter electrode 50.

However, since the transparent electrode 20 has irregularities, even if the light is totally reflected once at the interface between the transparent electrode 20 and the gap 60, as shown in FIG. Is repeatedly incident on the interface with the gap 60 at an angle smaller than the critical reflection angle during repeated reflections between the transparent electrode 20 and the counter electrode 50, and is transmitted through the gap 60. FIG.
FIG. 3 is an enlarged view of an interface between a transparent electrode 20 and a gap 60;
It shows how the traveling direction of light changes. Note that the uneven shape shown in FIG. 4 is simplified for easy understanding, and the actually formed uneven shape does not need to correspond to FIG.

The light totally reflected at the interface between the transparent electrode 20 and the gap 60 enters the light-emitting layer 40 or, as shown in FIG. There is. Further, the incident angle of light differs between the first incidence and the second incidence due to the uneven shape of the transparent electrode 20. For this reason, the light that has entered the second time has a component that is reflected and re-enters the light emitting layer 40 or refracted and enters the gap 60. The light that has been reflected and re-entered into the light emitting layer 40 is reflected by the counter electrode 50, and has a component that re-enters the interface between the transparent electrode 20 and the gap 60 as described above. In this way, the light emitted from the light emitting layer 40 is reflected several times between the transparent electrode 20 and the counter electrode 50, so that many components can be transmitted through the gap 60.

As described above, the unevenness is formed on the transparent electrode 20 and the gap 60 exists, so that most of the light emitted from the light emitting layer 40 passes through the gap 60. As described above, air enters the gap 60, and the refractive index of the gap 60 is smaller than the refractive index of the glass substrate 10. Therefore, total reflection does not occur at the interface between the gap 60 and the glass substrate 10. In addition, since the refractive index of air is substantially equal to that of vacuum, and the glass substrate 10 is sandwiched between substances (air) having substantially the same refractive index on both sides, substantially all light incident on the gap 60 is made of glass. The light enters the substrate 10.

The surface of the glass substrate 10 opposite to the gap 60 is in contact with the outside atmosphere (or vacuum).
That is, the glass substrate 10 is in a state sandwiched by air (or air and vacuum). Therefore, the gap 60
From the glass substrate 10, substantially all of the light that has entered the glass substrate 10 exits the glass substrate 10 to the outside.

As described above, by forming the gap 60 between the glass substrate 10 and the transparent electrode 20, light can be emitted outside without being confined in the glass substrate 10. Thereby, the light emitting layer 4
Light emitted from 0 can be extracted to the outside with high efficiency. Further, light of the same level as in the related art can be extracted to the outside with a voltage lower than in the related art, so that power consumption can be reduced as compared with the related art.

Next, a light emitting device according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 5 (a)
FIG. 5B is a configuration diagram of a light emitting device according to the second embodiment. Note that FIG. 5B is a diagram corresponding to A in FIG.
It is -A 'sectional drawing.

The light emitting device according to the second embodiment has substantially the same configuration as that of the first embodiment, as shown in FIG. However, on the surface of the transparent electrode 20 on the gap 60 side,
A dot pattern 20a is formed, and the traveling direction of light emitted from the light emitting layer 40 is changed in various directions by the dot pattern 20a. The dot pattern 20a is made of a material that reflects light or the transparent electrode 20.
Are formed from substances having different refractive indexes.

Next, a method of manufacturing the light emitting device having the above-described configuration will be described. FIGS. 6A to 6F are cross-sectional views illustrating respective manufacturing steps of the light emitting device. FIG.
As shown in FIG.
The process is substantially the same as that of the first embodiment up to the point where the metal film 60a of nm is formed and patterned.

As shown in FIG. 6A, a plurality of metal films 60a of Cr or the like are patterned so as to extend in parallel with each other in the direction perpendicular to the plane of the drawing, and then are formed by CVD or the like.
As shown in (b), the glass substrate 10 and the metal film 60
For example, a titanium oxide film 20b is formed on a. Subsequently, as shown in FIG. 6C, the titanium oxide film 20b is patterned by photolithography or etching to form a dot pattern 20a. As described above, the dot pattern 20a is formed to change the traveling direction of incident light in various ways. For this reason, the dot pattern 20a is formed to have a size equal to or larger than the wavelength of the light emitted from the light emitting layer 40.

Thereafter, ITO is deposited on the glass substrate 10, the dot pattern 20a, and the metal film 60a by a CVD method or the like. Then, the ITO is patterned by photolithography, etching or the like, and as shown in FIG. 6D, a plurality of transparent electrodes 20 extend in a direction perpendicular to the extending direction of the metal film 60a and are arranged in parallel with each other. To be formed.

Then, as shown in FIG. 6E, the gap 60 is formed by removing the metal film 60a by, for example, wet etching. At this time, the etching rate of the transparent electrode 20 and the dot pattern 20a is
Under conditions (for example, a TW liquid is used as an etching liquid) that is sufficiently smaller than the etching rate of a,
The metal film 60a is etched. The transparent electrode 20
Are formed at predetermined intervals, the metal film 60a is exposed between the transparent electrodes 20, and etching is started from the exposed portion.

After the formation of the gap 60, as in the first embodiment, as shown in FIG.
The light emitting layer 40 and the counter electrode 50 are formed to complete the light emitting device shown in FIG. As described above, the glass substrate 10
A gap 60 is formed between the transparent electrode 2 and the transparent electrode 2.
By forming the dot pattern 20a at 0, most of the light emitted from the light emitting layer 40 can be made to enter the gap 60 as in the first embodiment. Thus, the light emitted from the light emitting layer 40 can be emitted to the outside of the light emitting element with high efficiency.

Further, since the same amount of light can be extracted to the outside at a voltage lower than that of the conventional device, the power consumption can be reduced as compared with the conventional device. In the first and second embodiments, the thickness is 20 to 50 nm and the width is 1
The gap 60 may be formed by patterning the metal film 60a to have a thickness of 00 μm or less (specifically, 2 to 40 μm). In addition, the metal film 60a has such a size.
By patterning, the metal film 60a under the transparent electrode 20 can be removed by wet etching, and at the time of forming the light emitting layer 40 and the counter electrode 50, a material substance is prevented from penetrating deep into the gap 60. it can. Therefore, the formation of the interlayer insulating film 30 can be omitted.

In the first and second embodiments, when the interlayer insulating film 30 is not formed, a short circuit between the transparent electrode 20 and the counter electrode 50 is prevented in order to prevent a short circuit between the transparent electrode 20 and the counter electrode 50. The light emitting layer 40 is formed on the entire surface between the electrodes, and further, as shown in FIG.
May be formed so as to be shifted from the position. Also in this case, light is efficiently radiated to the glass substrate 110 above the gap 60 by light scattering as described above, and thus, in the region 70 where the gap 60 exists between the transparent electrode 20 and the counter electrode 50, light is emitted. The brightness is high because the ratio is high. Further, regions 80 and 90 where there is no gap 60 between the transparent electrode 20 and the counter electrode 50 emit light at a predetermined voltage, but do not have as high brightness as the region 70 because there is not much diffusion of light.

In the first and second embodiments, the interlayer insulating film 30 is formed by vapor deposition, sputtering, and CVD.
(Chemical vapor deposition) may be used. Also in these methods, since the interlayer insulating film 30 grows in a direction substantially perpendicular to the surface of the glass substrate 10, the interlayer insulating film 30 can be formed without filling the gap 60. In the first and second embodiments, as described above, by forming the unevenness or the dot pattern 20 a on the transparent electrode 20, most of the light from the light emitting layer 40 enters the gap 60. For this reason, the glass substrate 10
Even if is excluded, the same light extraction efficiency as described above can be obtained.

In the first embodiment, the metal film 6
A different type of metal or the like may be included only in the surface layer 0a. For example, the metal film 60a may be formed by doping Zn or the like at a predetermined concentration on the surface of the Cr film. Also,
This doping concentration may be set according to the size of the unevenness and the like. Further, the present invention can be applied irrespective of the electrode formation pattern, such as a light emitting element having an active matrix structure and a light emitting element for segment display. That is, as described above, a gap is formed between the transparent substrate and the transparent electrode, and irregularities and dot patterns are formed on the substrate-side surface of the transparent electrode, thereby achieving high efficiency regardless of the electrode formation pattern. Light can be extracted outside. Further, as described above, since the metal film 60a is removed when the gap 60 is formed, a film (sacrifice film) other than the metal film 60a may be used. In this case, as described above, as long as the sacrificial film can be removed by wet etching or the like, any material such as an insulator such as SiO 2 or a conductor such as polysilicon can be used.

[0045]

As is clear from the above description, according to the present invention, the traveling direction of the light emitted from the light emitting layer is changed to the first direction.
It can be changed in various directions by means for changing the electrodes (irregularities, reflective materials, or refractive materials). For this reason, the light reflected by the changing means of the first electrode is not emitted to the outside from the first electrode, but is emitted to the outside by repeating reflection several times between the first electrode and the second electrode. Can be. In this manner, light emitted from the light emitting layer can be emitted to the outside with high efficiency, and the same brightness as in the related art can be obtained with a small operating voltage.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a light emitting device according to a first embodiment.

FIG. 2 is a cross-sectional view showing each manufacturing process of the light emitting device shown in FIG.

FIG. 3 is a diagram illustrating light propagation in a light emitting element.

FIG. 4 is a diagram showing light propagation at an interface having irregularities.

FIG. 5 is a cross-sectional view illustrating a configuration of a light emitting device according to a second embodiment.

FIG. 6 is a cross-sectional view showing each manufacturing step of the light-emitting element shown in FIG.

FIG. 7 is a view showing a relative position between a transparent electrode and a counter electrode in another configuration of the light emitting element.

FIG. 8 is a cross-sectional view illustrating a configuration of a conventional light emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Glass substrate, 20 ... Transparent electrode, 20a ... Dot pattern, 20b ... Titanium oxide film, 30 ... Interlayer insulating film, 40 ... Light emitting layer, 50 ... Counter electrode , 60 ... gap,
60a: Metal film

Claims (11)

[Claims] 1. A substrate that transmits light and is formed on the substrate so as to have a gap between the substrate and the substrate, and transmits light and changes a traveling direction of light to a surface on the substrate side. A first electrode having means, formed on a surface of the first electrode opposite to the substrate,
A light-emitting element, comprising: a light-emitting layer that emits light in accordance with an applied voltage; and a second electrode formed on the light-emitting layer and reflecting light. 2. The light emitting device according to claim 1, wherein the first electrode has an uneven shape on a surface as the changing means. 3. The light emitting device according to claim 1, wherein the first electrode has, as the changing means, a reflecting material formed at a predetermined position on a surface and reflecting light. 4. The apparatus according to claim 1, wherein the first electrode has a refractive material formed at a predetermined position on a surface and having a different refractive index from the first electrode, as the changing means. Light emitting element. 5. A first electrode having a change means for transmitting light and changing a traveling direction of light on a surface on the substrate side on a substrate transmitting the light, wherein a first electrode is provided with a gap between the first electrode and the substrate. Forming a light emitting layer on a surface of the first electrode opposite to the substrate; forming a light emitting layer that emits light in accordance with an applied voltage; and forming the light emitting layer. On the second, a second electrode for reflecting light is formed.
An electrode forming step, comprising the steps of: 6. The method according to claim 5, wherein the first electrode forming step includes a step of forming irregularities on one surface of the first electrode as the changing means. 7. The first electrode forming step includes: forming a sacrificial film having an uneven surface on a predetermined region on the substrate; and forming the first electrode on the sacrificial film. By
The light emitting device according to claim 6, further comprising: a changing unit forming step of forming irregularities on one surface of the first electrode; and a removing step of forming the gap by removing the sacrificial film. Manufacturing method. 8. The method according to claim 5, wherein the step of forming the first electrode includes a step of, as the changing means, installing a reflective material that reflects light at a predetermined position on one surface of the first electrode. 3. The method for manufacturing a light emitting device according to item 1. 9. The sacrifice film forming step of forming a sacrifice film in a predetermined region on the substrate; the reflection material forming step of forming the reflection material on a surface of the sacrifice film; Forming the first electrode on the sacrificial film on which the reflective material is formed, forming a changing means for installing the reflective material on one surface of the first electrode, and removing the sacrificial film, The method for manufacturing a light emitting device according to claim 8, further comprising: a removing step of forming a gap. 10. The first electrode forming step includes, as the changing means, a step of disposing a refractive material having a different refractive index from that of the first electrode at a predetermined position on one surface of the first electrode.
A method for manufacturing a light emitting device according to claim 5, wherein: 11. The sacrifice film forming step of forming a sacrifice film in a predetermined region on the substrate, the first electrode forming step, the refraction material forming step of forming the refraction material on a surface of the sacrifice film, Forming the first electrode on the sacrificial film on which the refraction material is formed, changing means forming the refraction material on one surface of the first electrode, and removing the sacrificial film, The method for manufacturing a light emitting device according to claim 10, comprising: a removing step of forming a gap.