JP2001055432A - Semiconductor device sealing resin composition, semiconductor device using the same, semiconductor device manufacturing method and manufacturing apparatus - Google Patents

Abstract

(57) [Problem] To provide a sealing material effective for shortening a time for resin sealing a wafer and improving production efficiency, and also provide a method and an apparatus for manufacturing a semiconductor device. SOLUTION: An epoxy resin, a curing agent,
A resin composition containing a curing accelerator and an inorganic filler and using the curing accelerator as an aromatic onium salt is used. In the manufacture of the semiconductor device, the sealing material 24 placed on the wafer 21 in the molds 31 and 32 is heated and compressed to spread over the entire surface of the wafer 21, and the sensor detects that the sealing material 24 has been spread. After the detection by 37, the mold temperature is raised to cure the sealing material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device having a bump for an external terminal so as to expose a wafer before cutting into individual devices (chips). The present invention relates to a semiconductor device obtained by cutting individual elements (chips) after resin sealing. More specifically, the present invention relates to a semiconductor encapsulating resin composition used for encapsulating a semiconductor in the production of such a semiconductor device, and a method and an apparatus for producing such a semiconductor device.

[0002]

2. Description of the Related Art In a conventional resin-encapsulated semiconductor device (QFP) having a lead frame, in order to protect a semiconductor element, the element is sealed with a thermosetting resin to which an inorganic filler is added. In addition, transfer molding is generally used for this sealing.

[0003] Such a conventional resin sealing step will be described as follows. After setting the lead frame on which the elements are mounted in a mold in advance, the tablet-like resin is preheated, and then the resin is transferred by being pressed by a plunger and charged into the mold. Cure in the mold until the resin is cured.

[0004] In general, the package size of the QFP is at least about 8 mm x 8 mm and the thickness is about 1 mm. Also, in order to allow a large number of packages to be obtained by one molding, the longer the distance the resin to be transferred flows in the mold, the better. On the other hand, the mold used for molding is kept at a constant temperature by turning on and off the heater, and the sealing resin moves inside the mold while melting and hardening the inside of the heated mold. The resin is filled.

In a semiconductor device having a lead frame as described above, the package size increases with the increase in the number of pins, and the pitch of the external leads decreases.
It becomes difficult to handle. A ball grid array (BGA) type package and a chip size package developed recently have solved such a problem.

FIG. 1 shows an example of a chip size package. A new method by which the chip size package 10 of this figure can be manufactured includes solder bumps 1 for external terminals.
After sealing a wafer (not shown) in which a large number of semiconductor devices including the semiconductor device 2 are manufactured so that the end faces of the bumps are exposed,
There is a method in which individual semiconductor elements 11 are cut. The thickness of the sealing resin 13 in the chip size package 10 of FIG. 1 manufactured in this manner is 80 to 120 μm.
And the resin layer is very thin as compared with the conventional QFP. In order to mount the package 10 of FIG. 1 on a substrate, solder balls 14 for bonding are prepared on the exposed end faces of the bumps 12.

In a conventional compression molding machine used for molding a resin for sealing a wafer, the temperature is adjusted by turning a heater on and off, and a sealing material having good fluidity in a mold maintained at a constant temperature in this manner. Was spread on the wafer while melting and curing were performed in parallel. Further, an epoxy resin is generally used as a conventional sealing material, and a phosphorus catalyst such as triphenylphosphine having good moisture resistance is used as a curing accelerator.

[0008]

When compression molding is performed to seal a wafer using the above-described sealing material, the conventional sealing is performed in a mold maintained at a constant temperature (160 to 190 ° C.). The melting and curing reactions of the stopping resin proceed in parallel. Therefore, in order to completely seal the wafer, it is necessary to lengthen the gelling time of the sealing material (to prevent the curing reaction from proceeding) and to lengthen the time during which the sealing material has a low melt viscosity as much as possible. Was needed. Therefore, it took about 5 to 10 minutes for the molding time including the time required for filling and curing the resin. For these reasons, there were limits to improving production capacity.

An object of the present invention is to shorten the time required for a molding step of sealing a wafer with a resin and to improve production efficiency, and to provide a resin composition for sealing a semiconductor device which is effective for that purpose. To provide a new method and apparatus for manufacturing a semiconductor device.

[0010]

The resin composition for encapsulating a semiconductor device of the present invention comprises an epoxy resin, a curing agent for the epoxy resin, a curing accelerator, and an inorganic filler, wherein the curing accelerator is an aromatic resin. It is a group III onium salt.

According to the method of manufacturing a semiconductor device of the present invention, a wafer on which a plurality of semiconductor elements provided with bumps are manufactured is resin-sealed so that end faces of the bumps are exposed, and then the wafer is cut into individual elements. A method of heating and compressing a sealing material disposed on a wafer in a mold to spread the resin sealing of the wafer over the entire surface of the wafer. It is characterized in that the process is carried out by a step of raising the mold temperature and curing the sealing material after detecting that the sealing material is spread over the entire surface.

Further, the semiconductor device manufacturing apparatus of the present invention comprises:
This is an apparatus for manufacturing a semiconductor device by sealing a wafer before cutting, in which a plurality of semiconductor elements provided with bumps are manufactured, so that end surfaces of the bumps are exposed, and accommodates a wafer to be sealed with a resin, and An apparatus provided with a mold for heating and compressing a sealing material disposed thereon, and pressing the sealing material over the entire surface of the wafer to cure the sealing material. The mold includes a heating unit, a cooling unit, and a sealing material filling pressure detection sensor. It is characterized by having.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION A resin composition for encapsulating a semiconductor device, which is a semiconductor encapsulant of the present invention, comprises an epoxy resin, a curing agent for the epoxy resin, a curing accelerator, and an inorganic filler. The accelerator is an aromatic onium salt. This resin composition is used to fabricate a semiconductor device having bumps for external terminals, and seal the wafer before cutting into individual devices (chips) so that the bump end surfaces are exposed, and then cut into individual devices. The method can be used particularly advantageously in the manufacture of a semiconductor device obtained by the above method, but it goes without saying that the present invention can be applied to the manufacture of a general semiconductor device manufactured without such a method.

The aromatic onium salt which can be used as a curing accelerator in the present invention has the following general formula:

[0015]

Embedded image

(E in the formula is an S, N or P atom,
R ¹ is a substituted or unsubstituted monovalent hydrocarbon group, hydroxyl group, alkoxyl group, nitro group, cyano group or halogen atom, and when a is 2, R ¹ may be the same or different , R ² and R ³ are H or a methyl group, and R ⁴ is the same or different, substituted or unsubstituted 1
R ⁵ is a substituted or unsubstituted pyridium group; a is an integer of 0 to 2;
And when E is N or P, it is 3). Such an epoxy curing accelerator for an aromatic onium salt may be prepared using a conventional synthesis method, or for example, Available as Adeka Optomer from Adeka.

The monovalent hydrocarbon group of the above formula has 1 to 3 carbon atoms.
The alkyl group of the alkoxyl group preferably has 1 to 3 carbon atoms. 1
When a divalent hydrocarbon group or a pyridium group is substituted, the substituent is generally halogen, but the substituent is not limited thereto.

FIG. 2 shows a biphenyl-type epoxy resin (YX-4000H manufactured by Yuka Shell Epoxy) and a curing agent xylylene phenol (XLC-225L manufactured by Mitsui Chemicals, Inc.).
In the encapsulant using L), a conventional example using triphenylphosphine (PP-360 obtained from KI Kasei Co., Ltd.) which is a conventional curing accelerator, and an aromatic onium salt according to the present invention, formula

[0019]

Embedded image

The progress rate (reaction rate) of the curing reaction accompanying the temperature rise in the examples of the present invention using the aromatic sulfonium salt of (1) is shown (heating rate 5 ° C./min).

In a conventional system using a triphenylphosphine curing accelerator, the curing reaction starts at about 80 ° C. and ends at about 180 ° C. When molding with such a sealing material, the curing reaction begins to proceed simultaneously with the melting of the resin.Therefore, the amount of the curing accelerator added is kept to the minimum necessary, and the curing reaction is mildly promoted. The flowable time is extended to ensure moldability. for that reason,
The curing time of the resin becomes longer, and it takes about 5 to 10 minutes for molding. According to the experimental results of the inventors, it takes about 5 to 6 minutes to form an 8 inch diameter wafer (resin sealing).

On the other hand, when the above aromatic sulfonium salt is used as an aromatic onium salt curing accelerator according to the present invention, melting starts at about 150 ° C., and the curing reaction proceeds at 170 ° C.
Starting at about 200 ° C. Therefore, at the time of wafer molding, the mold is set in advance to a temperature at which the resin melts, and after the resin is arranged in the mold and melted, spread and filled on the wafer, the mold temperature is increased. The resin can be cured. In addition, when an aromatic onium salt is used as a curing accelerator, a sealed product free of foam and free of voids can be obtained despite the rapid curing reaction as described above. On the other hand, one of the drawbacks is that the conventional triphenylphosphine-based curing accelerator easily causes foaming during the sealing operation.

The addition amount of the above-mentioned curing accelerator in the resin composition for encapsulating a semiconductor device of the present invention may be appropriately determined mainly according to the curing time required for the resin composition for encapsulation. Generally, 0.1 to 100 parts by weight of the epoxy resin used as the main agent in the encapsulating resin composition is 0.1 to 0.1 parts by weight.
About 10 parts by weight of a curing accelerator is used. An extremely small addition amount is disadvantageous in that the curing time is prolonged, which is disadvantageous. On the other hand, even if a large amount of the curing accelerator is used, the effect of shortening the curing time is saturated, and the cured sealing material is also used. This is not preferable because it may adversely affect the characteristics.

In the resin composition for encapsulating a semiconductor device of the present invention in which an aromatic onium salt is used as a curing accelerator, any compound having two or more epoxy groups in one molecule is used as an epoxy resin as a main component. Can be. Such epoxy resins include, for example, cresol novolak type epoxy resin, phenol novolak type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, various novolak type epoxy resins synthesized from bisphenol A and resorcinol, linear fat, etc. Group epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, halogenated epoxy resin and the like. Two or more epoxy resins may be used in combination.

A particularly preferred epoxy resin is a biphenyl type epoxy resin from the viewpoint of heat resistance and moisture resistance. In this sense, when two or more epoxy resins are used in combination depending on the application, it is advantageous to set the proportion of the biphenyl type epoxy resin in all the epoxy resins to 50% by weight or more.

The curing agent for the epoxy resin is not particularly limited as long as it reacts with the epoxy resin to cure it. Specific examples of the curing agent that can be used include phenol novolak resin, cresol novolak resin, phenol aralkyl resin, trishydroxyphenylmethane, various novolak resins synthesized from bisphenol A and resorcinol, polyallylphenol, dicyclopentadienephenol, Various polyphenol compounds such as resole resin and polyvinyl phenol, acid anhydrides such as maleic anhydride, phthalic anhydride and pyromellitic anhydride, and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, etc. Can be mentioned. Among them, from the viewpoint that the curing start temperature can be higher than that of amine-based curing agents that are easy to cure at a relatively low temperature and easily leave unfilled portions of the encapsulant, and from the viewpoint of moisture resistance, hydroxyl groups are contained in one molecule. Phenol compounds having two or more phenol compounds are preferable. For example, xylylene phenol, phenol novolak resin, phenol aralkyl resin and the like are preferably used. In some cases,
Two or more curing agents can be used in combination.

There is no particular limitation on the mixing ratio between the epoxy resin and the curing agent, but from the viewpoint of the mechanical properties of the cured product of the obtained epoxy resin and the adhesiveness between the cured product and the semiconductor device, the curing of the epoxy resin is difficult. The chemical equivalent ratio of the agent is 0.
It is preferably in the range of 5 to 1.5, especially 0.7 to 1.3.

The inorganic filler used in the resin composition for encapsulating a semiconductor device of the present invention is used for encapsulation in order to prevent the encapsulant from peeling off from the element due to a difference in linear expansion coefficient between the encapsulant and the element. It is blended to make the coefficient of linear expansion of the material close to that of the element and to strengthen the sealing material. As such an inorganic filler, it is desirable to use silica powder from the viewpoint of moisture resistance. As the silica powder, fused silica, crystalline silica, chemically synthesized silica, or the like is used.

The average particle size of the silica filler is 0.5 to 20 μm.
m and a maximum particle size of 45 μm or less. If the average particle size is 0.5 μm or less, the fluidity of the sealing resin composition is low, so that high filling of the filler cannot be performed, and the temperature cycle resistance of the sealed semiconductor device is reduced. When the average particle size exceeds 20 μm, the wirings and bumps on the element are easily damaged. On the other hand, if the maximum particle size exceeds 45 μm, the large-sized filler first flows out to the outer periphery of the wafer due to the pressure at the time of molding, and it becomes impossible to uniformly disperse the filler in resin on the wafer.

The filler added to the sealing resin composition preferably accounts for 50 to 95% by weight of the total solids. If the content is less than 50% by weight, the mechanical strength of the cured sealing material decreases, and the thermal expansion coefficient increases, so that the crack resistance of the sealing material when subjected to a temperature cycle decreases. On the other hand, when the content exceeds 95% by weight, the fluidity of the sealing material before curing is reduced, and unfilling is likely to occur. In a system to which a conventional triphenylphosphine curing accelerator has been added, the amount of filler added is 9 because the viscosity increases due to the curing that proceeds simultaneously with the flow.
In order to obtain a resin exceeding 0% by weight, it was necessary to lengthen the gelation time. For this reason, the molding time may exceed 10 minutes, and there is a difficulty in molding cycle properties. On the other hand, by using the aromatic onium salt curing accelerator of the present invention, the two-stage process of the fluidization process and the curing process can be separately performed, and the filling of the filler can be increased for the first time.

The surface of the filler may be treated with a coupling agent to improve the wettability and adhesion between the resin and the surface of the filler. As the coupling agent, a silane-based, titanium-based, aluminum-based or the like is used. In particular,
When silica powder is used as the filler, it is desirable to use a silane coupling agent. In addition, when using silica powder as a filler, when using an alkoxysilane-based coupling agent, the alkoxy group of the coupling agent is subjected to a hydrolysis reaction in advance by a hydrolysis reaction, and is converted to a hydroxyl group. It may be used for the treatment of powder filler. The reason for this is that, especially when fused silica and the like have very few hydroxyl groups on the surface, when surface treatment is performed with an alkoxysilane-based coupling agent, unreacted silane-based coupling agent tends to remain in the sealing material. The unreacted residual silane-based coupling agent reacts with moisture in the air to generate alcohol, which is vaporized when the sealing material is cured and causes voids in the cured product (that is, the sealing material layer). Because it can be. The hydrolysis treatment of the silane coupling agent in advance can be easily performed, for example, by reacting the silane coupling agent with water.

The resin composition for encapsulating a semiconductor device of the present invention comprises:
If desired, silicone rubber, olefin copolymer,
An elastomer such as a modified nitrile rubber, a modified polybutadiene rubber, a modified silicone oil, or a thermoplastic resin such as polyethylene may be contained as a stress reducing agent. Such a stress reducing agent is effective for lowering the bending elastic modulus at room temperature of the formed sealing material layer.

Further, the resin composition for encapsulating a semiconductor device of the present invention contains a halogen compound such as a halogenated epoxy resin (for example, a brominated epoxy resin), a flame retardant such as a phosphorus compound, and a flame retardant such as antimony trioxide. An auxiliary agent, a crosslinking agent such as an organic peroxide, and a coloring agent such as carbon black and a dye can be optionally added.

Next, a method and an apparatus for manufacturing a semiconductor device according to the present invention will be described with reference to FIGS.

First, as shown in FIG.
1. A wafer 21 on which bumps 22 have been formed is placed in a mold composed of a lower mold 32, outer molds 33 and 33 'with the bumps 22 facing upward, and a sealing resin is placed on the wafer 21. A tablet 24 of the composition is placed. At this time, the upper mold 31 and the lower mold 32 are previously maintained at a temperature at which the tablet 24 can be melted and easily filled on the wafer 21 by the heating means described below. The upper mold 31 is provided with a heating means 34 and a cooling means 35, and the lower mold 32 is also provided with a similar heating means 34 'and a cooling means 35'. , A rod-shaped heater or the like, which is a heating element utilizing electric resistance, can be used.
Further, as the cooling means 35, 35 ', a cooling circuit for flowing cooling water or the like can be used. On the molding surface of the upper mold 31, a film 36 for facilitating peeling of the wafer after molding (sealing) is prepared. The outer die is provided with a sensor 37 that can detect the filling pressure of the sealing material. As the sealing material filling pressure detecting sensor, sensors that can detect the weight or pressure of a load cell or the like can be used.

Next, as shown in FIG. 3B, compression molding of the tablet 24 is started by clamping and pressing the lower mold 35 upward. The resin composition of the tablet 24 heated and melted by the upper mold 31 and the lower mold 32 spreads while flowing on the wafer. At this time, a resin that melts but does not substantially proceed the curing reaction, that is, a resin that hardly or slightly progresses is selected. In the method and apparatus of the present invention, any resin composition having such characteristics and capable of sealing a semiconductor device may be used. As such a resin composition, the resin composition of the present invention, which is an epoxy resin composition using the above-described aromatic onium salt as a curing accelerator, can be suitably used.

The compression molding is further continued, and as shown in FIG. 4A, the resin composition of the tablet 24 completely covers the wafer 21 and completely fills the mold cavity 39 (FIG. 3B). When filling, the pressure sensor 37 attached to the outer mold 33 on the side of the mold senses the filling pressure of the sealing material, and in conjunction with this, the heating means 34, 34 'adjusts the mold temperature to the tablet 2.
The temperature is increased to a temperature at which the curing reaction of the resin composition of No. 4 proceeds. At least one pressure sensor 37 may be provided, but by providing a plurality of pressure sensors 37, it becomes easy to prevent the occurrence of an unfilled portion of the resin composition. Although not shown, a resin reservoir may be provided in the outer peripheral portion of the mold (outside portion of the wafer 21), and a pressure sensor may be provided there. In such a case, the occurrence of an unfilled portion of the resin composition may be reduced. It can be prevented more reliably. Further, a floating mechanism may be provided in such a resin reservoir, and a pressure sensor may be attached to the floating mechanism. When the resin reservoir has such a floating structure, the wafer can always be filled with a fixed amount of resin even if the amount of the resin composition used for molding varies.

The faster the temperature rise rate when the resin composition is cured by heating, the better. As the temperature rises, the curing reaction of the resin composition progresses rapidly and depends on the amount of the curing accelerator used.
It is completed in about 0 seconds. After the curing of the resin composition, FIG.
As shown in (1), the mold is opened, and the wafer 41 sealed with the resin molded product is taken out. Thereafter, the cooling means 35, 3
5 ′, the mold temperatures of the upper mold 31 and the lower mold 32 are shown in FIG.
The temperature is reduced to the preheating temperature at the time of placing the wafer 21 and placing the tablet 24 of the sealing resin composition described with reference to (a).

Through the above series of steps, the molding for sealing the wafer 21 with resin is completed. In this molding operation, although it depends on the wafer size, it takes about 2 to melt and flow the resin composition.
It takes about 0 to 150 seconds, and about 0.5 to 30 seconds for subsequent heating and curing, and about 20.5 to 180 seconds (3 minutes) in total. As described above, in the case of the conventional molding method using a resin composition in which melting, flow, and curing reactions proceed simultaneously, the total molding time including the time required for filling and curing the resin composition is It took about 5 to 10 minutes. In comparison with this, according to the present invention, it can be seen that the molding time for resin sealing can be dramatically reduced.

The formed wafer is cut by dicing to obtain semiconductor chips of individual chip size packages as shown in the figure.

[0041]

EXAMPLES Next, the present invention will be further described with reference to examples, but it goes without saying that the present invention is not limited to these examples.

[Examples 1 to 11] Biphenyl type epoxy resin (YX-4000 manufactured by Yuka Shell Chemical Co., Ltd.) as main agent
H), xylylene phenol (XLC-225LL, manufactured by Mitsui Chemicals, Inc.) as an epoxy curing agent, spherical silica surface-treated with γ-glycidoxypropyltrimethoxysilane (coupling agent) previously dealcoholized by a hydrolysis reaction , And the following formula

[0043]

Embedded image

A mixture obtained by mixing the aromatic sulfonium salts in a composition ratio shown in Table 1 by a mixer is melt-kneaded by a kneader, then cooled and pulverized, tableted, and sealed in a semiconductor device of the present invention. A resin composition for use was obtained.

Using the obtained resin composition and the manufacturing apparatus described with reference to FIGS.
m) Wafer molding was performed. The molding conditions were such that the resin was compressed at 170 ° C. and filled on the wafer, and when the pressure sensor detected the filling, the mold temperature was raised to 190 ° C. to cure the resin. The curing time was 30 seconds. The obtained molded wafer is diced, and the semiconductor device (8 × 7 m) of the chip size package described with reference to FIG.
m) and the following tests were performed on them.

(1) Moisture resistance A semiconductor device is mounted on a pressure cooker tester (121 ° C., 85
% Relative humidity) for 500 hours and then inspected for device failure when a bias voltage was applied (7 V). Table 1 shows the obtained results as the number of defective chips per 100 chips.

(2) Filling Between Voids and Wirings The voids in the sealing resin layer in the semiconductor device and the presence or absence of resin unfilling (foaming) between the wirings were examined using an ultrasonic flaw detection microscope. The results are also shown in Table 1, where ○ indicates that voids and unfilled (foaming) were not observed, and × indicates that observed.

(3) Temperature Cycle Resistance The semiconductor device was subjected to a thermal shock cycle test (number of cycles: 1000) between -65 ° C. and 150 ° C., and the presence or absence of peeling between the sealant and the chip was increased 30 times. Check with a microscope,
At the same time, the presence or absence of resin cracks was confirmed. The results are shown in Table 1 as the number of defective chips per 100 chips.

[Comparative Examples 1 to 6] In Comparative Examples 1 to 5, as shown in Table 1, the sealing resin compositions prepared from the same components as those used in the above Examples were used. Compositions using spherical silica having an average particle size outside the preferred range of the present invention (Comparative Examples 1 and 2), Compositions using spherical silica having a maximum particle size outside the preferred range of the present invention Product (Comparative Example 3), a composition in which the amount of spherical silica added is less than the preferred range of the present invention (Comparative Example 4), the amount of spherical silica added exceeds the preferred range of the present invention, and the maximum particle size of the present invention is A composition outside the preferred range (Comparative Example 5) was used. Also, in Comparative Example 6, as the hardening accelerator, trivalent aromatic onium salt was used in place of the aromatic onium salt used in the above Examples and Comparative Examples 1 to 5. Phenylphosphine (TPP)
A semiconductor device was manufactured in the same manner as in the above example, except that was used, and the same test was performed. The results shown in Table 1 were obtained.

[0050]

[Table 1]

As described above, the present invention includes the following. 1. Epoxy resin, curing agent for this epoxy resin,
A resin composition for sealing a semiconductor device, comprising a curing accelerator and an inorganic filler, wherein the curing accelerator is an aromatic onium salt. 2. The curing accelerator has the following formula

[0052]

Embedded image

(E in the formula is an S, N or P atom,
R ¹ is a substituted or unsubstituted monovalent hydrocarbon group, hydroxyl group, alkoxyl group, nitro group, cyano group or halogen atom, and when a is 2, R ¹ may be the same or different , R ² and R ³ are H or a methyl group, and R ⁴ is the same or different, substituted or unsubstituted 1
R ⁵ is a substituted or unsubstituted pyridium group; a is an integer of 0 to 2;
2. The resin composition for encapsulating a semiconductor device according to the above 1, which is an aromatic onium salt represented by the following formula (2), and E is 3 when E is N or P).

3. The inorganic filler is a silica powder,
3. The resin composition for sealing a semiconductor device according to the above 1 or 2. 4. 3. The above silica powder, wherein the average particle size of the silica powder is 0.5 to 20 μm, and the maximum particle size is 45 μm or less.
4. The resin composition for sealing a semiconductor device according to item 1. 5. The inorganic filler is 50 to 9 of the total solid content of the composition.
5. The resin composition for encapsulating a semiconductor device according to any one of 1 to 4, wherein 5% by weight is added. 6. A solder bump for an external terminal formed on a wafer on which a semiconductor element is manufactured is provided, and is sealed with the resin composition according to any one of the above 1 to 5 so that an end face of the bump is exposed. A semiconductor device characterized by the above-mentioned.

7. A method of manufacturing a semiconductor device by resin-sealing a wafer on which a plurality of semiconductor elements provided with bumps are manufactured so that end faces of the bumps are exposed, and thereafter cutting the wafer into individual elements. The process of heating and compressing the sealing material placed on the wafer in the mold to spread the resin over the entire surface of the wafer, and the mold after detecting that the sealing material has been spread over the entire surface of the wafer. A method for manufacturing a semiconductor device, wherein the method is performed by a step of raising a temperature to cure a sealing material. 8. 8. The method according to the above item 7, wherein a material that is melted in the step of spreading the sealing material over the entire surface of the wafer but does not substantially undergo a curing reaction is used as the sealing material. 9. 9. The resin according to the above item 8, wherein the encapsulant is a resin composition containing an epoxy resin, a curing agent for the epoxy resin, a curing accelerator, and an inorganic filler, wherein the curing accelerator is an aromatic onium salt. the method of. 10. As the curing accelerator, the following formula

[0056]

Embedded image

(E in the formula is an S, N or P atom;
R ¹ is a substituted or unsubstituted monovalent hydrocarbon group, hydroxyl group, alkoxyl group, nitro group, cyano group or halogen atom, and when a is 2, R ¹ may be the same or different , R ² and R ³ are H or a methyl group, and R ⁴ is the same or different, substituted or unsubstituted 1
R ⁵ is a substituted or unsubstituted pyridium group; a is an integer of 0 to 2;
Wherein R is 2, and E is N or P is 3.) 11. This is an apparatus for manufacturing a semiconductor device by sealing a wafer before cutting, in which a plurality of semiconductor elements provided with bumps are manufactured, so that end surfaces of the bumps are exposed, and accommodates a wafer to be sealed with a resin, and An apparatus provided with a mold for heating and compressing a sealing material disposed thereon, and pressing the sealing material over the entire surface of the wafer to cure the sealing material. The mold includes a heating unit, a cooling unit, and a sealing material filling pressure detection sensor. An apparatus for manufacturing a semiconductor device, comprising:

[0058]

According to the present invention, the molding time for sealing the wafer with resin can be greatly reduced, and a highly reliable semiconductor device can be provided.

[Brief description of the drawings]

FIG. 1 is a diagram generally illustrating a chip size package.

FIG. 2 is a graph showing a curing reaction rate of a sealing resin composition with increasing temperature.

FIG. 3 is a diagram illustrating the first half of the process of resin sealing of a wafer according to the present invention.

FIG. 4 is a diagram illustrating the latter half of the resin sealing of the wafer according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Chip size package 11 ... Wafer 12 ... Bump 13 ... Sealing resin 21 ... Wafer 22 ... Bump 24 ... Tablet of sealing resin composition 31 ... Upper mold 32 ... Lower mold 34, 34 '... Heating means 35, 35 '... Cooling means 37 ... Pressure sensor 41 ... Sealed wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 (72) Inventor Norio Fukasawa 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Stock In-house (72) Inventor Takashi Hozumi 4-1-1, Kamidadanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture F-term within Fujitsu Limited (reference) 4J002 CC032 CD011 CD021 CD041 CD061 CE002 DJ018 EJ016 EL136 EN056 EN137 EV297 EW177 FD018 FD142 FD146 FD157 4J036 AA01 AF05 AF06 AF19 DA01 DA04 DB06 DB15 DC02 FB07 GA01 GA02 GA03 GA04 JA07 4M109 AA01 BA07 CA03 CA22 DA02 DB17 EA02 EB02 EB04 EB06 EB07 EB08 EB09 EB13 EB19 EC20 5F061 AA01 BA07 CA03 CA22 DA01 DA03

Claims (5)

[Claims] 1. A resin composition for encapsulating semiconductor devices, comprising an epoxy resin, a curing agent for the epoxy resin, a curing accelerator, and an inorganic filler, wherein the curing accelerator is an aromatic onium salt. object. 2. The method according to claim 1, wherein the curing accelerator has the following formula: (E in the formula is an S, N or P atom, and R ¹ is a substituted or unsubstituted monovalent hydrocarbon group, hydroxyl group, alkoxyl group, nitro group, cyano group or halogen atom;
Is 2, R ¹ may be the same or different, R ² and R ³ are H or a methyl group, and R ⁴ is the same or different, substituted or unsubstituted monovalent hydrocarbon group. R ⁵ is a substituted or unsubstituted pyridium group,
a is an integer of 0 to 2, and b is an aromatic onium salt represented by the formula (2) when E is S, and 3 when E is N or P). A resin composition for stopping. 3. The semiconductor device according to claim 1, further comprising a solder bump for an external terminal formed on the wafer on which the semiconductor element is manufactured.
A semiconductor device, wherein the resin composition is sealed so that an end face of the bump is exposed. 4. A method of manufacturing a semiconductor device by sealing a wafer on which a plurality of semiconductor elements provided with bumps are manufactured with resin so that end faces of the bumps are exposed, and thereafter cutting the wafer into individual elements. Then, the process of heating and compressing the sealing material disposed on the wafer in the mold to spread the resin over the entire surface of the wafer, and the process of spreading the sealing material over the entire surface of the wafer. The method for manufacturing a semiconductor device, comprising: performing a process of raising a mold temperature and curing a sealing material after detecting the temperature. 5. An apparatus for manufacturing a semiconductor device by sealing a wafer before cutting, in which a plurality of semiconductor elements provided with bumps are manufactured, so that end faces of the bumps are exposed, wherein the wafer to be sealed with resin is provided. And a mold for heating and compressing the sealing material disposed on the wafer, pushing the sealing material over the entire surface of the wafer, and curing the sealing material, wherein the mold has a heating means, a cooling means, and a sealing material. An apparatus for manufacturing a semiconductor device, comprising a filling pressure detection sensor.