JP2000268741A5 - - Google Patents
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- JP2000268741A5 JP2000268741A5 JP1999073589A JP7358999A JP2000268741A5 JP 2000268741 A5 JP2000268741 A5 JP 2000268741A5 JP 1999073589 A JP1999073589 A JP 1999073589A JP 7358999 A JP7358999 A JP 7358999A JP 2000268741 A5 JP2000268741 A5 JP 2000268741A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- carbon atom
- cluster
- ion
- atom cluster
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000002500 ions Chemical class 0.000 description 52
- 229910052799 carbon Inorganic materials 0.000 description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 40
- 150000001721 carbon Chemical group 0.000 description 36
- 239000002041 carbon nanotube Substances 0.000 description 26
- 229910021393 carbon nanotube Inorganic materials 0.000 description 26
- 238000000605 extraction Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000002048 multi walled nanotube Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000002109 single walled nanotube Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 7
- 238000001819 mass spectrum Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- -1 carbon nanotubes ion Chemical class 0.000 description 1
- VXRUJZQPKRBJKH-UHFFFAOYSA-N corannulene Chemical compound C1=CC(C2=C34)=CC=C3C=CC3=C4C4=C2C1=CC=C4C=C3 VXRUJZQPKRBJKH-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07358999A JP3525135B2 (ja) | 1999-03-18 | 1999-03-18 | 炭素原子クラスターイオン生成装置及び炭素原子クラスターイオンの生成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07358999A JP3525135B2 (ja) | 1999-03-18 | 1999-03-18 | 炭素原子クラスターイオン生成装置及び炭素原子クラスターイオンの生成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000268741A JP2000268741A (ja) | 2000-09-29 |
| JP3525135B2 JP3525135B2 (ja) | 2004-05-10 |
| JP2000268741A5 true JP2000268741A5 (fr) | 2004-07-22 |
Family
ID=13522663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07358999A Expired - Fee Related JP3525135B2 (ja) | 1999-03-18 | 1999-03-18 | 炭素原子クラスターイオン生成装置及び炭素原子クラスターイオンの生成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3525135B2 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3811004B2 (ja) | 2000-11-26 | 2006-08-16 | 喜萬 中山 | 導電性走査型顕微鏡用プローブ |
| JP2002162337A (ja) | 2000-11-26 | 2002-06-07 | Yoshikazu Nakayama | 集束イオンビーム加工による走査型顕微鏡用プローブ |
| JP2002334663A (ja) * | 2001-03-09 | 2002-11-22 | Vacuum Products Kk | 荷電粒子発生装置及びその発生方法 |
| JP4658490B2 (ja) * | 2004-02-26 | 2011-03-23 | 大研化学工業株式会社 | 電子源及びその製造方法 |
| JP2006267113A (ja) * | 2006-04-10 | 2006-10-05 | Yoshikazu Nakayama | 先端被覆ナノチューブ、走査型顕微鏡用先端被覆プローブ、これを用いた加工装置及び加工方法 |
| JP4534020B2 (ja) * | 2007-01-05 | 2010-09-01 | 独立行政法人産業技術総合研究所 | 分子ビーム装置 |
| JP4538589B2 (ja) * | 2007-01-10 | 2010-09-08 | 独立行政法人産業技術総合研究所 | 分子ビーム装置 |
| JP2007286066A (ja) * | 2007-05-28 | 2007-11-01 | Yoshikazu Nakayama | 集束イオンビーム加工による走査型顕微鏡用プローブ |
| JP5692497B2 (ja) * | 2009-07-29 | 2015-04-01 | 福岡県 | 表面加工方法及び表面加工装置 |
| KR101295702B1 (ko) * | 2009-11-02 | 2013-08-16 | 한국전자통신연구원 | 탄소 이온 발생 장치 및 이를 이용한 종양 치료 장치 |
-
1999
- 1999-03-18 JP JP07358999A patent/JP3525135B2/ja not_active Expired - Fee Related
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